JP2015125628A - Film sensor, display device with touch position detection function, and laminate for manufacturing film sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film sensor that is excellent in visibility.SOLUTION: A film sensor includes a support including a base material film and a plurality of detection patterns provided on the support. The detection patterns are composed of conducting wires having a light blocking effect and conductivity and arranged in a net-like pattern so that an opening is formed between the conducting wires. The conducting wire has a body layer and a low-reflection layer, where the body layer is formed of a metal material. When the thickness and the index of refraction of the low-reflection layer are defined as d(nm) and n, respectively, n×d falls within a range from 95 to 195 (nm). When the thickness, average index of refraction, and average extinction coefficient of the body layer are defined as d, n, and k, respectively, and the thickness, average index of refraction, and average extinction coefficient are defined as d, n, and k, d>d, n<n, k>kare satisfied.

Description

  The present invention relates to a film sensor for constituting a touch panel. Moreover, this invention relates to the display apparatus with a touch position detection function obtained by combining the touchscreen comprised from the said film sensor, and a display apparatus. The present invention also relates to a laminate for producing a film sensor.

  Today, touch panel devices are widely used as input means. The touch panel device includes a touch panel, a control circuit that detects a contact position on the touch panel, wiring, and an FPC (flexible printed circuit board). In many cases, the touch panel device is used together with the display device as an input means for various devices including a display device such as a liquid crystal display or an organic EL display (for example, a ticket vending machine, an ATM device, a mobile phone, a game machine). It has been. In such a device, the touch panel is disposed on the display surface of the display device, thereby enabling extremely direct input to the display device. The area of the touch panel that faces the display area of the display device is transparent, and this area of the touch panel constitutes an active area that can detect the contact position (approach position).

  As a touch panel, a projected capacitive coupling type touch panel is known. In the capacitive coupling type touch panel, when an outer conductor (typically, a finger) whose position is to be detected contacts (approaches) the touch panel via a dielectric, a strange capacitance is newly generated. The position of the external conductor on the touch panel is detected based on the change in capacitance caused by this strange capacitance. Such a projected capacitively coupled touch panel includes, for example, a film sensor including a support including a base film such as PET and a plurality of detection patterns provided on the support. The detection pattern is made of, for example, a transparent conductive material having translucency and conductivity.

  In addition, in order to lower the electrical resistance value of the detection pattern and thereby improve the detection accuracy of the touch position, a metal material such as silver or copper having higher conductivity than the transparent conductive material is used as a material constituting the detection pattern. It has been proposed to use (see, for example, Patent Document 1). When the detection pattern is made of a metal material, an opening for transmitting image light from the display device at an appropriate ratio is formed in the detection pattern. For example, the detection pattern is composed of conductive wires arranged in a mesh shape.

JP 2012-79238 A

  In the case where the detection pattern is constituted by a conductive wire made of a metal material, it is conceivable that the detection pattern is visually recognized by an observer (user) due to the metallic luster of the metal material. In particular, when copper is used as the material of the conductive wire, the reddish light peculiar to copper reaches the observer as reflected light from the detection pattern, thereby reducing the visibility of the image. End up.

  In order to prevent such a decrease in visibility due to the metallic luster, Patent Document 1 proposes that a blackening treatment layer is provided on the surface of the conductive wire to provide a blackening treatment layer. Yes. By the way, a certain amount of thickness is required for the blackening treatment layer formed by the blackening treatment. For this reason, when the blackening treatment layer is formed, the thickness of the conductor is generally 1 μm or more. On the other hand, the width of the conducting wire is generally about several μm. Therefore, when the blackening process is performed, it can be said that the thickness of the conductive wire exists at a large ratio that cannot be ignored with respect to the width of the conductive wire. In this case, it is conceivable that reflection not to be ignored occurs not only on the surface of the conducting wire but also on the side surface of the conducting wire, or the image light from the display device is hindered by the side surface of the conducting wire.

  An object of this invention is to provide the laminated body for producing the film sensor which can solve such a subject effectively, the display apparatus with a touch position detection function, and a film sensor.

1st this invention is a film sensor combined with a display apparatus, Comprising: The support body containing a base film and the some detection pattern provided on the said support body, The said detection pattern is light-shielding The conductive wire is composed of conductive wires arranged in a mesh shape so that openings are formed between the conductive wires, and the conductive wires are the following (1), (2) or ( 3) including a conductor forming layer having the configuration of 3)
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conducting wire forming layer has the configuration of (1), the conducting wire is disposed on the observer side of the support, and when the conducting wire formation layer has the configuration of (2), the conducting wire is: It is disposed on the display device side of the support, the main body layer is made of a metal material, the thickness of the main body layer is 0.2 μm or less, the thickness of the main body layer, wavelength 400 the average refractive index for light of ~700nm and average extinction coefficients and _d M, _{n M} and _{k M} respectively, the thickness of the low reflective layer, the wavelength 400~700nm average refractive index for light and average extinction coefficients each d Let _L , n _L and k _L When, the following relationship: _{d M> d L, n M} <n L, k M> k L
Is a film sensor.

2nd this invention is a film sensor combined with a display apparatus, Comprising: The support body containing a base film, and the several detection pattern provided on the said support body, The said detection pattern is light-shielding The conductive wire is composed of conductive wires arranged in a mesh shape so that openings are formed between the conductive wires, and the conductive wires are the following (1), (2) or ( 3) including a conductor forming layer having the configuration of 3)
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conducting wire forming layer has the configuration of (1), the conducting wire is disposed on the observer side of the support, and when the conducting wire formation layer has the configuration of (2), the conducting wire is: The main body layer is made of a metal material, the thickness of the main body layer is 0.2 μm or less, and the low reflection layer is a first reflection layer disposed on the display device side of the support. And a second layer provided between the first layer and the main body layer, and a thickness of the main body layer, an average refractive index and an average extinction coefficient for light having a wavelength of 400 to 700 nm, respectively. _M, and _{n M} and _{k M,} the first layer thickness, wavelength 400-700 m of the average refractive index and average extinction coefficient for light respectively _{d L1, n L1} and _{k L1} and then, the second layer thickness, _d of the average refractive index and average extinction coefficient for light with a wavelength of 400~700nm respectively _L2 , N _L2 and k _L2 , the following relational expressions d _M > d _L1 ≧ d _L2 , n _M <n _L2 , n _M <n _L1 , k _M > k _L2 > k _L1
Is a film sensor.

  In the film sensor according to the present invention, the support may further include an observer-side undercoat layer provided on the observer side of the base film. In this case, the refractive index of the observer side undercoat layer may be in the range of 1.50 to 1.75.

  In the film sensor according to the present invention, the observer-side undercoat layer includes an observer-side first undercoat layer, an observer-side provided between the observer-side first undercoat layer and the base film. And a second undercoat layer. In this case, preferably, the refractive index of the observer-side first undercoat layer is in the range of 1.58 to 1.75, and the refractive index of the observer-side second undercoat layer is 1 The refractive index of the observer-side first undercoat layer is larger than the refractive index of the observer-side second undercoat layer.

  The film sensor by this invention WHEREIN: The said support body may further contain the display apparatus side undercoat layer provided in the display apparatus side of the said base film. In this case, the refractive index of the display device side undercoat layer may be in the range of 1.50 to 1.75.

  In the film sensor according to the present invention, the display device side undercoat layer includes a display device side first undercoat layer, and the display device side provided between the display device side first undercoat layer and the base film. And a second undercoat layer. In this case, preferably, the refractive index of the display device side first undercoat layer is in a range of 1.58 to 1.75, and the refractive index of the display device side second undercoat layer is 1. The refractive index of the first undercoat layer on the display device side is larger than the refractive index of the second undercoat layer on the display device side.

  In the film sensor according to the present invention, the support may further include an adhesion layer that is provided in contact with the conductive wire and is made of silicon oxide or copper nitride.

3rd this invention is a laminated body for producing a film sensor, Comprising: It is provided on the support body containing a base film, and the said support body, and the following (1), (2) or (3) A conductive wire forming layer having a configuration,
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conducting wire forming layer has the configuration of (1), the conducting wire is disposed on the observer side of the support, and when the conducting wire formation layer has the configuration of (2), the conducting wire is: It is disposed on the display device side of the support, the main body layer is made of a metal material, the thickness of the main body layer is 0.2 μm or less, the thickness of the main body layer, wavelength 400 the average refractive index for light of ~700nm and average extinction coefficients and _d M, _{n M} and _{k M} respectively, the thickness of the low reflective layer, the wavelength 400~700nm average refractive index for light and average extinction coefficients each d Let _L , n _L and k _L When, the following relationship: _{d M> d L, n M} <n L, k M> k L
Is a laminated body characterized by satisfying.

4th this invention is a laminated body for producing a film sensor, Comprising: It is provided on the support body containing a base film and the said support body, and the following (1), (2) or (3) A conductive wire forming layer having a configuration,
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conducting wire forming layer has the configuration of (1), the conducting wire is disposed on the observer side of the support, and when the conducting wire formation layer has the configuration of (2), the conducting wire is: The main body layer is made of a metal material, and the low reflection layer is provided between the first layer and the first layer and the main body layer. A thickness of the main body layer, an average refractive index and an average extinction coefficient with respect to light having a wavelength of 400 to 700 nm are d _M , n _M and k _M , respectively, The average refractive index and average extinction coefficient for light with a wavelength of 400 to 700 nm are When d _L1 , n _L1, and k _L1 respectively, and the thickness of the second layer, the average refractive index and the average extinction coefficient for light having a wavelength of 400 to 700 nm are d _L2 , n _L2, and k _L2 , respectively, D _M > d _L1 ≧ d _L2 , n _M <n _L2 , n _M <n _L1 , k _M > k _L2 > k _L1
Is a laminated body characterized by satisfying.

  According to a fifth aspect of the present invention, there is provided a display device with a touch position detection function, comprising: a display device; and a film sensor disposed on a display surface of the display device, wherein the film sensor includes the film sensor described above. It is.

In the first and third aspects of the present invention, the conducting wire includes a main body layer made of a metal material and a low reflection layer. Here, the thickness of the main body layer, the average refractive index and the average extinction coefficient for light with a wavelength of 400 to 700 nm are d _M , n _M and k _M , respectively, and the thickness of the low reflection layer and the average refraction for light with a wavelength of 400 to 700 nm. rates and average extinction coefficient, respectively _d L, when the _{n L} and _{k L,} the following relationship _{d M> d L, n M} <n L, k M> k L
Is satisfied. For this reason, it can suppress that the reflected light resulting from the metallic luster of a main body layer reaches an observer with a low reflective layer. In the present invention, the thickness of the main body layer of the conducting wire is 0.2 μm or less. For this reason, the ratio of the thickness of the conducting wire to the width of the conducting wire can be reduced, whereby light is reflected on the side surface of the conducting wire, and video light from the display device is hindered by the side surface of the conducting wire. Can be suppressed. Therefore, according to the present invention, it is possible to sufficiently ensure the visibility of the image while ensuring high detection accuracy of the touch position.

In the second and fourth aspects of the present invention, the conducting wire includes a main body layer made of a metal material and a low reflection layer. The low reflection layer includes a first layer and a second layer provided to be in contact with the first layer between the first layer and the main body layer. Here, the thickness of the main body layer, the average refractive index and the average extinction coefficient for light with a wavelength of 400 to 700 nm are d _M , n _M and k _M respectively, and the thickness of the first layer and the average refraction for light with a wavelength of 400 to 700 nm. and rate and average extinction coefficient and _{d L1, n L1} and _{k L1} respectively, the thickness of the second layer, the average refractive index and average extinction coefficient, respectively for light having a wavelength 400 to 700 nm _{d L2, n L2} and _{k L2} to time, the following relational expression _{d M> d L1 ≧ d L2} , n M <n L2, n M <n L1, k M> k L2> k L1
Is satisfied. For this reason, it can suppress that the reflected light resulting from the metallic luster of a main body layer reaches an observer with a low reflective layer. In the present invention, the thickness of the main body layer of the conducting wire is 0.2 μm or less. For this reason, the ratio of the thickness of the conducting wire to the width of the conducting wire can be reduced, whereby light is reflected on the side surface of the conducting wire, and video light from the display device is hindered by the side surface of the conducting wire. Can be suppressed. Therefore, according to the present invention, it is possible to sufficiently ensure the visibility of the image while ensuring high detection accuracy of the touch position.

  Further, according to the fifth aspect of the present invention, it is possible to provide a display device with a touch position detection function that realizes high detection accuracy of a touch position and high visibility of an image.

FIG. 1 is a plan view showing a film sensor in the first embodiment of the present invention. 2A is an enlarged plan view showing a detection pattern in a portion surrounded by a one-dot chain line denoted by reference numeral II in FIG. FIG. 2B is a diagram showing a modification of the detection pattern. FIG. 3 is a cross-sectional view showing a case where the film sensor is cut along line III in FIG. 2A. 4 is an enlarged cross-sectional view of the support and the conductor shown in FIG. FIGS. 5A to 5D are views for explaining a film sensor manufacturing method. FIG. 6 is a cross-sectional view showing a modification of the conductive wire forming layer of the conductive wire of the film sensor according to the first embodiment of the present invention. FIG. 7 is a cross-sectional view showing a modified example of the conductive wire forming layer of the conductive wire of the film sensor in the first embodiment of the present invention. FIG. 8: is sectional drawing which shows the conducting wire formation layer of the conducting wire of the film sensor in the 2nd Embodiment of this invention. FIG. 9 is a cross-sectional view showing a modification of the conductive wire forming layer of the conductive wire of the film sensor according to the second embodiment of the present invention. FIG. 10 is a cross-sectional view showing a modification of the conductive wire forming layer of the conductive wire of the film sensor according to the second embodiment of the present invention. FIG. 11: is sectional drawing which shows the conducting wire formation layer of the conducting wire of the film sensor in the 3rd Embodiment of this invention. FIG. 12: is sectional drawing which shows the modification of the conducting wire formation layer of the conducting wire of the film sensor in the 3rd Embodiment of this invention. FIG. 13: is sectional drawing which shows the modification of the conducting wire formation layer of the conducting wire of the film sensor in the 3rd Embodiment of this invention. FIG. 14 is a development view showing a display device with a touch position detection function in the fourth embodiment of the present invention. 15 is a plan view showing a touch panel in the display device with a touch position detection function of FIG. 16 is an enlarged plan view showing a detection pattern in a portion surrounded by a one-dot chain line denoted by reference numeral XVI in FIG. 17 is a cross-sectional view showing a case where the touch panel is cut along the line XVII in FIG. 18 is an enlarged cross-sectional view of a part of the touch panel shown in FIG. FIG. 19 is a cross-sectional view showing a modification of the touch panel according to the fourth embodiment of the present invention. FIG. 20 is a cross-sectional view showing a modification of the touch panel according to the fourth embodiment of the present invention. FIG. 21 is a cross-sectional view showing a modification of the touch panel according to the fourth embodiment of the present invention. FIG. 22 is a sectional view showing a modification of the touch panel according to the fourth embodiment of the present invention. FIG. 23 is a view showing a modification of the cross-sectional shape of the conductive wire arranged on the display device side. FIG. 24 is a cross-sectional view showing a film sensor according to a fifth embodiment of the present invention. 25 is an enlarged cross-sectional view of a part of the film sensor shown in FIG. 26 is a cross-sectional view showing a laminate for producing the film sensor shown in FIG. FIG. 27 is a diagram illustrating a measurement result of a refractive index of a material that can form the main body layer and the low reflection layer. FIG. 28 is a diagram illustrating measurement results of extinction coefficients of materials that can form the main body layer and the low reflection layer. FIG. 29 is a cross-sectional view showing a layer structure of a sample of a laminate in Examples 1 and 2. FIG. 30 is a diagram illustrating a measurement result of reflectance of a sample of a laminated body in Example 1. FIG. 31 is a diagram illustrating a measurement result of reflectance of a sample of a laminated body in Example 2. 32 is a cross-sectional view showing a layer configuration of a sample of the laminate in Example 3. FIG. FIG. 33 is a diagram illustrating a measurement result of reflectance of a sample of a laminate in Example 3. FIG. 34 is a cross-sectional view showing a layer configuration of a sample of a laminate in Examples 4 and 5. FIG. 35 is a diagram showing the measurement results of the reflectance of the sample of the laminate in Example 4. FIG. 36 is a diagram showing the measurement results of the reflectance of the sample of the laminate in Example 5. FIG. 37 is a cross-sectional view showing a layer structure of a sample of a laminate in Example 6. FIG. 38 is a view showing a measurement result of reflectance of a sample of a laminate in Example 6.

First Embodiment Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 to 5A to 5D. First, referring to FIG. 1, a film sensor 31 for constituting a touch panel in the present embodiment will be described. FIG. 1 is a plan view showing the film sensor 31 when viewed from the observer side.

Film Sensor Here, an example in which the film sensor 31 is configured for a projection-type capacitively coupled touch panel will be described. The “capacitive coupling” method is also referred to as “capacitance” method or “capacitance coupling” method in the technical field of touch panels. It is treated as a term synonymous with the “capacitive coupling” method. A typical capacitive coupling type film sensor has a conductive pattern. When an external conductor (typically a human finger) approaches the film sensor 31, the external conductor and the film are detected. A capacitor (capacitance) is formed between the sensor 31 and the conductive pattern. Based on the change in the electrical state accompanying the formation of the capacitor, the position coordinates of the position where the external conductor is approaching on the film sensor 31 are specified.

  As shown in FIG. 1, the film sensor 31 includes a support body 32 and a plurality of detection patterns 41 provided on the support body 32. As shown in FIG. 1, each detection pattern 41 extends in a band shape. The plurality of detection patterns 41 are arranged at a constant arrangement pitch in a direction orthogonal to the direction in which each detection pattern 41 extends. The arrangement pitch of the detection patterns 41 is determined according to the resolution required for detection of the touch position, and is several mm, for example.

  As shown in FIG. 1, the support body 32 of the film sensor 31 includes a rectangular active area Aa1 corresponding to an area where the touch position can be detected, and a rectangular frame-shaped inactive area Aa2 positioned around the active area Aa1. And. Each of the active area Aa1 and the inactive area Aa2 is partitioned corresponding to an active area and an inactive area of the display device of the display device with a touch position detection function 10 described later.

  The detection pattern 41 described above is arranged in the active area Aa1. In the inactive area Aa2, a plurality of frame wirings 43 electrically connected to each detection pattern 41 and a plurality of terminals arranged near the outer edge of the support body 32 and electrically connected to each frame wiring 43 Part 44 is provided.

  Next, the pattern shape of the detection pattern 41 will be described with reference to FIG. 2A. FIG. 2A is a plan view showing a detection pattern 41 in a portion surrounded by an alternate long and short dash line denoted by reference numeral II in FIG. As shown in FIG. 2A, the detection pattern 41 is a conductive wire 51 having light shielding properties and electrical conductivity, and is composed of conductive wires 51 arranged in a mesh shape so that openings 51a are formed between the conductive wires 51. ing.

  The ratio of the area occupied by the opening 51a (hereinafter referred to as the aperture ratio) in the total area of the detection pattern 41 is sufficiently high, so that the image light from the display device can be transmitted through the film sensor 31 with an appropriate transmittance. As long as it can permeate | transmit the active area Aa1, the dimension and shape of the conducting wire 51 are not specifically limited. For example, in the example shown in FIG. 2A, the detection pattern 41 is configured by arranging the conductive wires 51 formed in a rectangular shape along a predetermined direction. The aperture ratio is appropriately set according to the characteristics of the image light emitted from the display device.

  The line width of the conducting wire 51 is set according to the required aperture ratio and the like. For example, the width of the conducting wire 51 is set within a range of 1 to 10 μm, more preferably within a range of 2 to 7 μm. The arrangement pitch P1 of the conductive wires 51 extending in parallel with each other is also set according to the required aperture ratio. Thereby, the influence which the conducting wire 51 has on the image visually recognized by the observer can be reduced to a negligible level.

  Although FIG. 2A shows an example in which the detection pattern 41 is configured by arranging the conductive wires 51 formed in a rectangular shape along a predetermined direction, the present invention is not limited to this. For example, as shown in FIG. 2B, the detection pattern 41 may be configured by arranging the conductive wires 51 formed in a rhombus shape along a predetermined direction.

  Next, the layer configuration of the film sensor 31 will be described with reference to FIGS. 3 is a cross-sectional view showing a case where the film sensor 31 is cut along the line III in FIG. 2A, and FIG. 4 is an enlarged cross-sectional view showing the support 32 and the conductive wire 51 shown in FIG. As shown in FIG. 3, the film sensor 31 includes a support 32 and a conductive wire 51 provided on the surface of the support 32.

(Support)
The support body 32 is for supporting patterns and wiring such as the detection pattern 41 and the frame wiring 43 described above. The support 32 includes a base film 33 that can transmit image light from the display device. As shown in FIG. 4, the support 32 may further include an undercoat layer 35 a provided between the base film 33 and the conductive wire 51 of the detection pattern 41. The support 32 may further include an undercoat layer 35 b provided on the side of the base film 33 opposite to the side facing the conductive wire 51. Moreover, between the base film 33 and each undercoat layer 35a, 35b, the primer layer 34a and primer for improving the adhesiveness between the base film 33, the undercoat layer 35a, and the undercoat layer 35b The layer 34b may be interposed.

[Base film]
As a material constituting the base film 33, a material having transparency and flexibility is used, and for example, a synthetic resin (plastic) is used. Examples of synthetic resins include flexibility and transparency such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), cycloolefin polymer (COP), polycarbonate (PC), polyimide (PI), or triacetyl cellulose (TAC). A resin having a property is used.

[Undercoat layer]
The undercoat layers 35a and 35b are layers provided to realize a function of improving the scratch resistance against scratches and the like and a function of adjusting optical characteristics such as transmittance and reflectance of the film sensor 31.
In the case where a function for improving the scratch resistance is required, a material having sufficient hardness, such as an acrylic resin, is used as the material constituting the undercoat layers 35a and 35b. In this case, the undercoat layer functions as a so-called hard coat layer.
Of the undercoat layers 35a and 35b, an undercoat layer positioned on the viewer side of the base film 33 is referred to as an “observer side undercoat”, and an undercoat layer positioned on the opposite side is indicated by “display”. It may also be referred to as “apparatus side undercoat”. As will be described later, the conductive wire 51 may be located on the viewer side of the support 32 or may be located on the display device side of the support 32. Accordingly, the undercoat layer 35a may be “observer side undercoat” and the undercoat layer 35b may be “display device side undercoat”, or the undercoat layer 35b may be “observer side undercoat”. The coat layer 35a may be “display device side undercoat”.

(Conductor)
Next, the layer structure of the conducting wire 51 will be described. As shown in FIG. 4, the conducting wire 51 includes a conducting wire forming layer 52 </ b> A having a main body layer 53 and a low reflection layer 54 arranged in this order from the support 32 side.

(Main body layer)
The main body layer 53 is a layer for mainly realizing electrical conductivity in the conductive wire 51. The main body layer 53 is configured to have a thickness of 0.2 μm or less, more specifically within a range of 0.02 to 0.2 μm. Thereby, it can suppress that the thickness of the conducting wire 51 whole becomes large, and it can suppress that external light and video light are reflected in the side surface of the conducting wire 51 by this. For this reason, the visibility in the display device to which the film sensor 31 is attached can be sufficiently ensured.

On the other hand, reducing the thickness of the main body layer 53 can lead to an increase in the electrical resistance value of the conducting wire 51. Here, in the present embodiment, a metal material having a specific resistance equal to or lower than a desired value is used as a material constituting the main body layer 53. For example, the specific resistance is 4.0 × 10 ⁻⁶ (Ωm). The following metal materials are used. Thereby, the electrical resistance value of the conducting wire 51 can be made sufficiently low. For example, the sheet resistance value of the main body layer 53 can be set to 0.3Ω / □ or less. As a metal material having a specific resistance of 4.0 × 10 ⁻⁶ (Ωm) or less for constituting the main body layer 53, for example, a material containing 90% by weight or more of copper can be used.

  By the way, metal materials, such as copper, show a metallic luster while having high electroconductivity. For this reason, when an untreated metal material is used as the conducting wire 51, the visibility of the image light from the display device is hindered by the metallic luster of the conducting wire. In particular, copper exhibits a reddish color peculiar to copper, so that it is more conspicuous than other metal materials such as silver, and this hinders the visibility of image light from the display device. In order to reduce such metallic luster peculiar to copper, for example, in Patent Document 1 described above, the conductive wire is oxidized to form a blackening treatment layer made of copper oxide on the surface of the conductive wire, whereby the surface of the conductive wire is formed. It has been proposed to blacken. However, in order to realize the blackening process, it is necessary to have a thickness that the main body layer 53 is present, for example, a thickness of about 1 μm. In this case, the thickness of the entire conductive wire 51 is increased, and as a result, external light and image light are generated on the side surface of the conductive wire 51 to a degree that cannot be ignored.

  In consideration of such a problem, the present inventors do not blacken the main body layer 53 of the conductive wire 51, but on the surface of the main body layer 53, a thin metallic luster is suppressed as compared with the main body layer 53. It is proposed to reduce the metallic luster of the conducting wire 51 by providing the low reflection layer 54. Hereinafter, the low reflection layer 54 will be described.

(Low reflection layer)
The low reflection layer 54 is a layer provided with the intention of reducing the light reflectance of the conducting wire 51 using thin film interference generated in the low reflection layer 54. Thin film interference is a phenomenon in which light reflected on one surface of the low reflective layer 54 interferes with light reflected on the other surface of the low reflective layer 54. Conventionally, by appropriately setting the thickness and refractive index of such a low reflection layer 54, thin film interference is generated so as to weaken the reflected light, thereby attempting to reduce the reflectance of light in the conducting wire 51. Has been made.

  However, when the present inventors actually measured the reflectance of light at the conducting wire 51 of the film sensor 31, it was found that the measurement result could not be accurately explained by thin film interference. As a result of earnest research on the cause, the present inventors have found that the reflectance of light on the conducting wire 51 of the film sensor 31 is not only influenced by thin film interference but also absorption of light generated in the main body layer 53 and the low reflection layer 54. It was found to be greatly influenced by. Based on this knowledge, the present inventors propose to set the thickness and optical constant (refractive index and extinction coefficient described later) in the main body layer 53 and the low reflection layer 54 as follows.

In the present embodiment, the thickness, average refractive index and average extinction coefficient of the main body layer 53 are d _M , n _M and k _M , respectively, and the thickness, average refractive index and average extinction coefficient of the low reflective layer 54 are respectively set. When d _L , n _L and k _L , the following three relational expressions d _M > d _L , n _M <n _L , k _M > k _L
The main body layer 53 and the low reflection layer 54 are configured to satisfy the above.

  Here, the “average refractive index” of the main body layer 53 and the low reflection layer 54 is an average value of the refractive indexes of the main body layer 53 and the low reflection layer 54 with respect to light having a wavelength of 400 to 700 nm. For example, first, the refractive index of the target layer is measured at a plurality of light wavelengths in the range of 400 to 700 nm, and then the measurement result of the refractive index at each light wavelength is averaged. Can be calculated. The averaging method is not particularly limited, and various methods can be used. For example, the average refractive index may be calculated by dividing the sum of the refractive index measurement results at each light wavelength by the number of measurement results. Moreover, based on the measurement result of the refractive index in each light wavelength, the profile of the refractive index in the range of 400-700 nm may be drawn, and an average refractive index may be calculated based on the integration result of this profile.

Ｉ：対象となる層に進入した光の強度
Ｉ_０：対象となる層に進入する直前の光の強度
ｚ：進入深さ
α：吸収係数
λ：光の波長
ｋ：消衰係数 The “average extinction coefficient” of the main body layer 53 and the low reflection layer 54 is an average value of extinction coefficients of the main body layer 53 and the low reflection layer 54 with respect to light having a wavelength of 400 to 700 nm. The method for calculating the average value of the extinction coefficient is the same as in the case of the above-described refractive index, and thus detailed description thereof is omitted. The “extinction coefficient” is a coefficient that serves as an index of the degree to which light that has entered the target layer is absorbed by the target layer. Like the refractive index, the extinction coefficient is a value specific to a material that is determined according to the material constituting the layer. When the extinction coefficient is used, the light absorption in the target layer is expressed by the following equation.

I: intensity of light entering the target layer I ₀ : intensity of light immediately before entering the target layer z: depth of penetration α: absorption coefficient λ: wavelength of light k: extinction coefficient

By the way, the complex refractive index N of the material is expressed by the following equation using the refractive index n and the extinction coefficient k.
N = n + ik
Thus, the extinction coefficient k can also be defined as representing the imaginary component of the complex refractive index N.

  As supported by the embodiments described later, the use of the main body layer 53 and the low-reflection layer 54 configured to satisfy the above-described three relational expressions reduces the visibility of the image due to the reflected light from the conducting wire 51. Can be suppressed.

As long as the above three relational expressions are satisfied, the specific configurations of the main body layer 53 and the low reflection layer 54 are not particularly limited. For example, as supported by the examples described later, a layer containing copper can be used as the main body layer 53 and a layer containing a copper compound made of copper oxide or copper nitride can be used as the low reflective layer 54. The ratio of copper contained in the main body layer 53 is, for example, 90% by weight or more. When the copper compound of the low reflective layer 54 is made of copper oxide, CuO configured by bonding copper atoms and oxygen atoms in a substantially one-to-one relationship may be used as the copper oxide. When the copper compound of the low reflective layer 54 is made of copper nitride, a copper compound containing several atomic% (for example, 2 to 5 atomic%) of nitrogen and about 90 atomic% or more of copper is used as the copper nitride. Can be. By using the main body layer 53 and the low reflection layer 54 having such a configuration, two of the above-described three relational expressions, n _M <n _L and k _M > k _L , as shown in examples described later, are used. The relational expression can be satisfied. Further, the thickness of the main body layer 53 is set within a range of 0.02 to 0.2 μm, for example, so that another relational expression d _M > d _L is satisfied, and the thickness of the low reflection layer 54 is within a range of 20 to 60 nm. Set in.

By the way, setting the thicknesses of the main body layer 53 and the low reflection layer 54 in this way leads to a reduction in the thickness of the entire conducting wire 51 compared to the conventional case. For this reason, it can suppress that external light and image light are reflected in the side surface of conducting wire 51. FIG. Therefore, according to the present embodiment, not only the optical characteristics of the main body layer 53 and the low reflection layer 54 but also the structural characteristics (dimensional characteristics) of the main body layer 53 and the low reflection layer 54 are derived from the conductor 51. This contributes to suppressing the reflected light.
A method for forming such a thin low-reflection layer 54 is not particularly limited, and a known thin film forming method such as a sputtering method, a vacuum evaporation method, a CVD method, an ion plating method, or an electron beam method is used. Can do. For example, when the sputtering method is used, the above-described copper compound having a desired composition is obtained by applying discharge power to a target made of copper in an environment where oxygen gas and nitrogen gas controlled to a predetermined partial pressure exist. Can be obtained.

  Note that the above-described copper oxide may further contain light elements such as nitrogen and carbon, and other inevitable impurities. Similarly, the above-mentioned copper nitride may further contain light elements such as oxygen and carbon, and other inevitable impurities. In this case, copper oxide can be formed, for example, by further introducing nitrogen gas or carbon dioxide gas in addition to oxygen gas during sputtering. Similarly, copper nitride can be formed, for example, by further introducing oxygen gas or carbon dioxide gas in addition to nitrogen gas during sputtering. Incidentally, it is known that carbon dioxide gas has an effect of stabilizing plasma. For this reason, by introducing carbon dioxide gas at the time of sputtering, it is possible to obtain the low reflection layer 54 made of a high-quality copper oxide film or copper nitride film in a stable environment.

The undercoat layer 35a described above may be composed of a plurality of layers. For example, although not illustrated, the undercoat layer 35a may include a first undercoat layer and a second undercoat layer provided between the first undercoat layer and the base film 33. . In this case, preferably, the refractive index of the first undercoat layer is in the range of 1.58 to 1.75, and the refractive index of the second undercoat layer is in the range of 1.50 to 1.60. The refractive index of the first undercoat layer is larger than that of the second undercoat layer. This allows the undercoat layer 35a to have not only the function as the hard coat layer described above but also the function of adjusting optical characteristics such as transmittance and reflectance. As a material constituting the first undercoat layer, a material obtained by dispersing particles or filler made of a high refractive index material such as niobium oxide or zirconium in a resin material serving as a base such as an acrylic resin can be used. Moreover, an acrylic resin etc. can be used as a material which comprises a 2nd undercoat layer.
Similarly, the undercoat layer 35b may be composed of a plurality of layers. For example, although not shown, the undercoat layer 35b may include a first undercoat layer and a second undercoat layer provided between the first undercoat layer and the base film 33. . In this case, preferably, the refractive index of the first undercoat layer is in the range of 1.58 to 1.75, and the refractive index of the second undercoat layer is in the range of 1.50 to 1.60. The refractive index of the first undercoat layer is larger than that of the second undercoat layer. As a result, as in the case of the undercoat layer 35a, the undercoat layer 35b can have not only the function as the hard coat layer described above but also the function of adjusting optical characteristics such as transmittance and reflectance. . As a material constituting the first undercoat layer and the second undercoat layer, the same material as in the case of the undercoat layer 35a can be used.
In addition, the refractive index shown in this specification means the refractive index with respect to the light of wavelength 500nm unless there is particular notice.

(Frame wiring and terminal part)
The frame wiring 43 and the terminal portion 44 connected to the detection pattern 41 are provided for taking out a signal from the detection pattern 41 to the outside of the film sensor 31. As long as signals can be appropriately transmitted, the specific configurations of the frame wiring 43 and the terminal portion 44 are not particularly limited. For example, the frame wiring 43 and the terminal portion 44 may be formed at the same time as the conducting wire 51 with the same layer configuration as the conducting wire 51.

Method for Manufacturing Film Sensor Next, a method for manufacturing the film sensor 31 having the above configuration will be described with reference to FIGS.

  First, as shown in FIG. 5A, a laminate 60 (also referred to as a blank) as a base material for producing the film sensor 31 is prepared. The stacked body 60 includes a support 32 and a conductive wire forming layer 52 </ b> A provided on the support 32. As described above, the support 32 includes the base film 33, the undercoat layer 35a and the undercoat layer 35b provided on both sides of the base film 33, the base film 33, the undercoat layer 35a, and It includes a primer layer 34a and a primer layer 34b provided between the undercoat layer 35b. The conductive wire forming layer 52A includes a main body layer 53 and a low reflection layer 54 that are arranged in this order from the support 32 side.

Hereinafter, an example of a method for producing the stacked body 60 will be described. First, the elongate base film 33 provided with the primer layer 34a and the primer layer 34b on both sides is prepared. Next, the undercoat layer 35a is formed on the primer layer 34a, and the undercoat layer 35b is formed on the primer layer 34b. For example, the undercoat layers 35a and 35b can be formed by coating a coating liquid containing an acrylic resin on the primer layers 34a and 34b using a coater. At this time, as the coater, a coater that can sufficiently ensure the flatness of the undercoat layers 35a and 35b is preferably used. For example, a die coater is used. In addition, the leveling agent for improving the flatness of undercoat layer 35a, 35b may be contained in the coating liquid for forming undercoat layer 35a, 35b. Thereby, for example, it is possible to suppress the occurrence of defects such as pinholes when the conductive wire 51 layer or the adhesion layer 36 described later is formed on the undercoat layer 35a.
Next, the main body layer 53 and the low reflection layer 54 are sequentially formed on the support 32. As a method for forming the main body layer 53 and the low reflection layer 54, as described above, a thin film forming method such as a sputtering method can be used.

  After preparing the laminated body 60, as shown in FIG.5 (b), the photosensitive layer 71 is formed in a predetermined pattern on the conducting wire formation layer 52A. The photosensitive layer 71 has photosensitivity to light in a specific wavelength range, for example, ultraviolet rays. The type of the photosensitive layer 71 is not particularly limited. For example, a photodissolvable photosensitive layer may be used, or a photocurable photosensitive layer may be used. Here, an example in which a photodissolvable photosensitive layer is used will be described.

  The photosensitive layer 71 is formed in a pattern corresponding to the pattern of the conducting wire 51. The photosensitive layer 71 is formed, for example, by first coating a photosensitive material on the surface of the laminate 60 using a coater, and then exposing and developing the photosensitive material in a predetermined pattern.

  Next, as shown in FIG. 5C, the low reflection layer 54 and the main body layer 53 are etched using the photosensitive layer 71 as a mask. As described above, both the low reflection layer 54 and the main body layer 53 are configured to contain copper. For this reason, the low reflection layer 54 and the main body layer 53 can be simultaneously etched using an etching solution capable of dissolving copper. For example, a ferric chloride solution is used as the etching solution.

  Next, exposure light is irradiated to the photosensitive layer 71 remaining on the low reflection layer 54. Thereafter, the photosensitive layer 71 is developed. As a result, the photosensitive layer 71 can be removed as shown in FIG. Thus, the film sensor 31 provided with the conducting wire 51 composed of the conducting wire forming layer 52A having the main body layer 53 and the low reflection layer 54 can be obtained.

  Here, according to the present embodiment, as described above, the conductive wire 51 includes the main body layer 53 containing 90% by weight or more of copper and the low reflection layer 54 containing a copper compound made of copper oxide or copper nitride. Contains. For this reason, the low reflection layer 54 can suppress reddish light from reaching the observer due to the metallic luster of copper. Moreover, since both the main body layer 53 and the low reflection layer 54 contain copper, when manufacturing the film sensor 31 from the laminated body 60, the laminated body 60 is used by using the etching liquid which can melt | dissolve copper selectively. The main body layer 53 and the low reflection layer 54 can be simultaneously etched to form the conductive wire 51. For this reason, the man-hour required in order to produce the film sensor 31 can be made small. Moreover, in this Embodiment, the thickness of the main body layer 53 of the conducting wire 51 is 0.2 micrometer or less. For this reason, the ratio of the thickness of the conducting wire 51 to the width of the conducting wire 51 can be reduced. As a result, light is reflected on the side surface of the conducting wire 51, and the image light from the display device is hindered by the side surface of the conducting wire 51. It can be suppressed. Therefore, according to the present embodiment, it is possible to sufficiently ensure the visibility of the image while ensuring high detection accuracy of the touch position.

  Various changes can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as the above embodiment. The duplicated explanation is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Example in which an adhesion layer is provided)
For example, as shown in FIG. 6, the support 32 may further include an adhesion layer 36 provided on the undercoat layer 35 a so as to contact the conductor 51. As a material constituting the adhesion layer 36, a material having high adhesion to the undercoat layer 35a and the conductor forming layer 52A is used, and for example, silicon oxide or copper nitride is used. By providing such an adhesion layer 36, the adhesion between the support 32 and the conductor forming layer 52A can be improved.

  The method for forming the adhesion layer 36 is not particularly limited, and various methods can be used. For example, a thin film forming method such as a sputtering method, a vacuum evaporation method, a CVD method, an ion plating method, or an electron beam method can be used as in the case of forming the layers 53 and 54 of the conductive wire forming layer 52A. When the adhesion layer 36 is made of silicon oxide, the adhesion layer 36 may be formed by a method of forming a silicon oxide gel film from a sol solution containing a silicon oxide sol. The thickness of the adhesion layer 36 made of silicon oxide is preferably in the range of 2 to 20 nm, for example, about 5 nm.

Although FIG. 6 shows an example in which the adhesion layer 36 exists over the entire region, that is, in a region other than the region where the conducting wire 51 exists, the present invention is not limited to this. For example, when an alkaline solution is used as a developing solution for developing the photosensitive layer 71, a portion of the adhesion layer 36 that overlaps the conductive wire 51 may be dissolved and removed in the developing solution. In this case, the adhesion layer 36 exists only in a portion overlapping the conductive wire 51. For example, when the adhesion layer 36 is made of a material having a low light transmittance such as copper nitride, the adhesion layer 36 is not illustrated, but the adhesion layer 36 is located in a region overlapping the conductive wire 51 when viewed from the normal direction of the base film 33. May be provided.
By the way, when the adhesion layer 36 is made of copper nitride, the adhesion layer 36 exhibits not only a function of improving adhesion (first function) but also a function of reducing reflectance (second function). be able to. When only the first function is required for the adhesion layer 36, the thickness of the copper nitride constituting the adhesion layer 36 may be at least 2 nm. On the other hand, when the first function and the second function are required for the adhesion layer 36, the thickness of the copper nitride constituting the adhesion layer 36 is set within a range of 20 to 60 nm, for example, 40 nm.

(Example where the low reflection layer includes a plurality of layers)
In the above-described embodiment, an example in which the low reflection layer 54 is a single layer has been described. However, the present invention is not limited to this, and the low reflection layer 54 may be formed of a plurality of layers. For example, as shown in FIG. 7, the low reflection layer 54 includes a first layer 54 a and a second layer 54 b provided so as to be in contact with the first layer 54 a between the first layer 54 a and the main body layer 53. You may go out. Hereinafter, the first layer 54a and the second layer 54b will be described.

In this modification, the thickness, average refractive index, and average extinction coefficient of the main body layer 53 are d _M , n _M, and k _M , respectively, and the thickness, average refractive index, and average extinction of the first layer 54a of the low reflective layer 54 are set. and the number of coefficient a and _{d L1, n L1} and _{k L1} respectively, when the thickness of the second layer 54b of the low reflective layer 54, the average refractive index and average extinction coefficient and _{d L2, n L2} and _{k L2} respectively, the following four relation _{d M> d L1 ≧ d L2} , n M <n L2, n M <n L1, k M> k L2> k L1
The first layer 54a and the second layer 54b of the main body layer 53 and the low reflection layer 54 are configured so as to satisfy the above. As supported by the embodiments described later, by using the main body layer 53 and the low reflection layer 54 configured to satisfy the above-described four relational expressions, the visibility of the image is reduced by the reflected light from the conducting wire 51. Can be suppressed.

As long as the above four relational expressions are satisfied, the specific configurations of the first layer 54a and the second layer 54b of the main body layer 53 and the low reflection layer 54 are not particularly limited. For example, as supported by the embodiments described later, a layer containing copper is used as the main body layer 53, and a layer containing a copper compound made of copper oxide is used as the first layer 54 a of the low reflective layer 54. As the second layer 54b, a layer containing a copper compound made of copper nitride can be used. The ratio of copper contained in the main body layer 53 is, for example, 90% by weight or more. As in the case of the above-described embodiment, CuO configured by bonding copper atoms and oxygen atoms in a substantially one-to-one relationship may be used as the copper oxide of the first layer 54a. As the copper nitride of the second layer 54b, a copper compound containing several atomic% (for example, 2 to 5 atomic%) of nitrogen and about 90 atomic% or more of copper can be used. By using the main body layer 53 and the first reflection layer 54a and the second reflection layer 54b of the low reflection layer 54, n _M <n among the above-described four relational expressions as shown in the examples described later. _L2, that _n M _{<n L1} and _{k M> k L2> k L1} can satisfy the three relations. Further, the thickness of the main body layer 53 is set within a range of 0.02 to 0.2 μm, for example, so that another relational expression d _M > d _L1 ≧ d _L2 is satisfied, and the first layer 54a of the low reflective layer 54 is set. The thickness of is set, for example, within a range of 10 to 30 nm. The thickness of the second layer 54b of the low reflection layer 54 is set to be, for example, in the range of 10 to 30 nm and not more than the thickness of the first layer 54a.
Undercoat undercoat

  Similar to the case of the present embodiment described above, the copper oxide of the first layer 54a may further contain a light element such as nitrogen or carbon, or other inevitable impurities. Similarly, the copper nitride of the second layer 54b may further contain light elements such as oxygen and carbon, and other inevitable impurities.

  In addition, although the some modification with respect to this Embodiment mentioned above has been demonstrated, naturally, it can also apply combining a some modification suitably.

Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. In the second embodiment shown in FIG. 8, the same parts as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. Moreover, when it is clear that the effect obtained in the first embodiment can be obtained in the present embodiment, the description thereof may be omitted.

(Conductor)
FIG. 8 is an enlarged cross-sectional view showing the film sensor 31 according to the present embodiment, and corresponds to FIG. 4 in the first embodiment described above. As shown in FIG. 8, in the present embodiment, the conducting wire 51 includes a conducting wire forming layer 52 </ b> B having a low reflection layer 54, a main body layer 53, and a rust prevention layer 55 arranged in this order from the support 32 side.

[Low reflection layer and body layer]
The main body layer 53 and the low reflection layer 54 are the same as the main body layer 53 and the low reflection layer 54 in the first embodiment described above except that the positional relationship with the support 32 is different.

(Rust prevention layer)
The rust prevention layer 55 is provided in order to prevent the surface of the main body layer 53 from being rusted and denatured, thereby deteriorating the electrical characteristics and the like of the main body layer 53. As a material constituting the rust prevention layer 55, a material that is less likely to rust than the material constituting the body layer 53 is used. The rust prevention layer 55 may be configured to exhibit not only a function of preventing the surface of the main body layer 53 from rusting but also a function of preventing reflection of light by the conductive wire 51. That is, the rust preventive layer 55 may be configured such that its metallic luster is reduced as compared with the metallic luster in the main body layer 53.

  A specific material for constituting the rust prevention layer 55 is appropriately selected according to characteristics required for the rust prevention layer 55 such as rust prevention and antireflection characteristics. For example, the rust prevention layer 55 includes at least one copper compound selected from the group consisting of CuNi, CuCr, CuW, and CuTi. Among these, CuNi may be configured as so-called white copper containing 20% by weight of Ni, for example.

  According to this embodiment, in addition to the low reflection layer 54 provided between the main body layer 53 and the support body 32, the conducting wire 51 is opposite to the surface of the main body layer 53 that faces the support body 32. A rust preventive layer 55 provided on the side surface is included. For this reason, it can prevent that the surface of the main body layer 53 rusts and changes in quality, and thereby the electrical property of the main body layer 53 falls. Moreover, when the rust prevention layer 55 also has an antireflection characteristic, it can suppress that light reflection arises in both surfaces of the main body layer 53. FIG. For this reason, the high electrical conductivity of the conducting wire 51 can be maintained, and the visibility of the image can be sufficiently secured.

(Example in which an adhesion layer is provided)
In the present embodiment as well, as in the case of the first embodiment described above, as shown in FIG. 9, the support 32 is an adhesion layer provided on the undercoat layer 35 a so as to contact the conductor 51. 36 may be further included. Thereby, the adhesiveness between the support body 32 and the conducting wire formation layer 52B can be improved.

(Example where the low reflection layer includes a plurality of layers)
Also in the present embodiment, the low reflection layer 54 may be composed of a plurality of layers as in the case of the first embodiment described above. For example, as shown in FIG. 10, the low reflection layer 54 includes a first layer 54 a and a second layer 54 b provided so as to be in contact with the first layer 54 a between the first layer 54 a and the main body layer 53. You may go out. Thereby, the antireflection effect in the low reflection layer 54 can be further improved.

  In addition, although the some modification with respect to this Embodiment mentioned above has been demonstrated, naturally, it can also apply combining a some modification suitably.

Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIG. In the third embodiment shown in FIG. 11, the same parts as those in the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted. Moreover, when it is clear that the effect obtained in the first embodiment can be obtained in the present embodiment, the description thereof may be omitted.

(Conductor)
FIG. 11 is an enlarged cross-sectional view of the film sensor 31 according to the present embodiment, and corresponds to FIG. 4 in the first embodiment described above. As shown in FIG. 11, in the present embodiment, the conducting wire 51 includes a conducting wire forming layer 52 </ b> C having a low reflection layer 54, a main body layer 53, and a low reflecting layer 54 arranged in order from the support 32 side.

[Low reflection layer and body layer]
The main body layer 53 and the low reflection layer 54 are the same as the main body layer 53 and the low reflection layer 54 in the first embodiment described above except that the positional relationship with the support 32 is different.

  According to this embodiment, in addition to the low reflection layer 54 provided between the main body layer 53 and the support body 32, the conducting wire 51 is opposite to the surface of the main body layer 53 that faces the support body 32. It includes a low reflection layer 54 provided on the side surface. For this reason, the occurrence of light reflection can be suppressed on both sides of the main body layer 53. Thereby, it is possible to sufficiently ensure the visibility of the video.

(Example in which an adhesion layer is provided)
Also in this embodiment, as in the case of the first embodiment described above, as shown in FIG. 12, the support 32 is an adhesion layer provided on the undercoat layer 35 a so as to contact the conductor 51. 36 may be further included. Thereby, the adhesiveness between the support body 32 and the conducting wire forming layer 52C can be improved.

(Example where the low reflection layer includes a plurality of layers)
Also in the present embodiment, the low reflection layer 54 may be composed of a plurality of layers as in the case of the first embodiment described above. For example, as shown in FIG. 13, each low reflection layer 54 includes a first layer 54 a and a second layer 54 b provided so as to be in contact with the first layer 54 a between the first layer 54 a and the main body layer 53. May be included. Thereby, the antireflection effect in the low reflection layer 54 can be further improved. Although FIG. 13 shows an example in which each of the low reflection layers 54 provided on both sides of the main body layer 53 is composed of a plurality of layers, the present invention is not limited to this and is provided on one side of the main body layer 53. Only the low reflection layer 54 to be formed may be composed of a plurality of layers, and the low reflection layer 54 provided on the other side of the main body layer 53 may be composed of a single layer.

  In addition, although the some modification with respect to this Embodiment mentioned above has been demonstrated, naturally, it can also apply combining a some modification suitably.

Fourth Embodiment Next, a fourth embodiment of the present invention will be described with reference to FIGS. In the present embodiment, a display device with a touch position detection function obtained by combining a touch panel including the above-described film sensor 31 and a display device will be described. In the present embodiment, the same parts as those in the above-described embodiments are denoted by the same reference numerals, and detailed description thereof is omitted. In addition, when it is clear that the operational effects obtained in each embodiment can be obtained also in this embodiment, the description thereof may be omitted.

Display Device with Touch Position Detection Function FIG. 14 is a development view showing the display device 10 with a touch position detection function. As shown in FIG. 1, the display device 10 with a touch position detection function is configured by combining a touch panel 30 and a display device 15 such as a liquid crystal display or an organic EL display. The illustrated display device 15 is configured as a flat panel display. The display device 15 includes a display panel 16 having a display surface 16 a and a display control unit (not shown) connected to the display panel 16. The display panel 16 includes an active area A1 that can display an image, and an inactive area (also referred to as a frame area) A2 that is disposed outside the active area A1 so as to surround the active area A1. . The display control unit processes information regarding the video to be displayed, and drives the display panel 16 based on the video information. The display panel 16 displays a predetermined image on the display surface 16a based on a control signal from the display control unit. That is, the display device 15 plays a role as an output device that outputs information such as characters and drawings as video.

  As shown in FIG. 14, a protective plate 12 having translucency may be further provided on the viewer side of the touch panel 30, that is, the side opposite to the display device 15. For example, the protective plate 12 is bonded to the surface of the touch panel 30 on the viewer side with an adhesive layer or the like. The protective plate 12 is for preventing damage to the pattern of the touch panel 30 and the display device 15 due to contact with an external conductor such as a finger, and is also referred to as a so-called front plate.

As shown in FIG. 14, the touch panel 30 is bonded to the display surface 16 a of the display device 15 via, for example, an adhesive layer (not shown). The touch panel 30 is configured by combining two film sensors 31. In FIG. 14, the film sensor disposed on the viewer side is represented by reference numeral 31A, and the film sensor disposed on the display device side from the film sensor 31A is represented by reference numeral 31B. In the following description, the film sensors denoted by reference numerals 31A and 31B are also referred to as first film sensor 31A and second film sensor 31B, respectively.

  FIG. 15 is a plan view showing the touch panel 30 when viewed from the observer side. In FIG. 15, the components of the first film sensor 31A are represented by solid lines, and the components of the second film sensor 31B are represented by dotted lines.

  As shown in FIG. 15, each of the first film sensor 31A and the second film sensor 31B includes a plurality of detection patterns 41 extending in a predetermined direction. Here, the first film sensor 31 </ b> A and the second film sensor 31 </ b> B are arranged so that the detection patterns 41 extend in directions intersecting each other. For example, the first film sensor 31A is disposed such that the detection pattern 41 extends along the first direction D1. On the other hand, the 2nd film sensor 31B is arrange | positioned so that the detection pattern 41 may extend along the 2nd direction D2 orthogonal to the 1st direction D1.

  FIG. 16 is an enlarged plan view showing the detection pattern 41 in the portion surrounded by the alternate long and short dash line with the symbol XVI in FIG. As shown in FIG. 16, the detection pattern 41 of the first film sensor 31 </ b> A and the detection pattern 41 of the second film sensor 31 </ b> B are each composed of conductive wires 51 arranged in a mesh shape.

  17 is a cross-sectional view showing a case where the touch panel 30 is cut along the line XVII in FIG. As shown in FIG. 17, the touch panel 30 includes the first film sensor 31 </ b> A and the first film sensor 31 </ b> A so that the conductor 51 of the first film sensor 31 </ b> A and the conductor 51 of the second film sensor 31 </ b> B are positioned on the viewer side of the support 32. It is configured by combining two film sensors 31B. An adhesive layer 38 or the like may be interposed between the first film sensor 31A and the second film sensor 31B.

  18 is an enlarged cross-sectional view of a part of the touch panel 30 shown in FIG. As shown in FIG. 18, both the conducting wire 51 of the first film sensor 31A and the conducting wire 51 of the second film sensor 31B include the above-described conducting wire forming layer 52A. Here, as shown in FIG. 18, the conducting wire forming layer 52 </ b> A includes a main body layer 53 and a low reflection layer 54 provided on the viewer side of the main body layer 53. For this reason, it can suppress that the external light which injected into the touch panel 30 from the observer side is reflected by the conducting wire 51, and returns to the observer side. Thereby, it can suppress that the conducting wire 51 is visually recognized by an observer, and this can suppress that the visibility of the image from the display device 15 is hindered by the conducting wire 51.

  As described above, the main body layer 53 of the conductor forming layer 52A is configured to have a thickness of 0.2 μm or less. For this reason, it can suppress that the light which injected into the touch panel 30 along the direction inclined from the normal line direction of the support body 32 is reflected by the side surface of 52 A of conducting wire formation layers. Thereby, it can suppress that the side of the conducting wire 51 is visually recognized by an observer, and that the video light from the display device is hindered by the side of the conducting wire 51. Accordingly, the visibility of the video can be improved.

  Various changes can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as the above embodiment. The duplicated explanation is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Variation regarding the type of conductive wire forming layer used)
FIG. 18 shows an example in which both the conducting wire 51 of the first film sensor 31A and the conducting wire 51 of the second film sensor 31B include the conducting wire forming layer 52A. However, the present invention is not limited to this, and the conducting wire 51 of the first film sensor 31A may include the conducting wire forming layer 52B or the conducting wire forming layer 52C described above. That is, the conducting wire 51 of the first film sensor 31A may be configured by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C. Similarly, the conducting wire 51 of the second film sensor 31B may be constituted by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C.

  For example, FIG. 19 shows an example in which both the conducting wire 51 of the first film sensor 31A and the conducting wire 51 of the second film sensor 31B include the conducting wire forming layer 52B. As shown in FIG. 19, the conductive wire forming layer 52 </ b> B includes a main body layer 53 and a rust prevention layer 55 provided on the viewer side of the main body layer 53. For this reason, it can prevent that the surface of the main body layer 53 rusts and changes in quality, and thereby the electrical property of the main body layer 53 falls. Moreover, when the rust prevention layer 55 also has an antireflection characteristic, it can suppress that the external light which injected into the touch panel 30 from the observer side is reflected by the conducting wire 51, and returns to the observer side.

  The conductive wire forming layer 52B includes a low reflection layer 54 provided on the display device side of the main body layer 53. Therefore, the image light from the display device 15 incident on the touch panel 30 is reflected by the conductive wire 51 and returns to the display device 15 side, and then reflected again by the components of the display device 15 and reaches the observer as noise light. Can be suppressed.

  Further, FIG. 20 shows an example in which both the conducting wire 51 of the first film sensor 31A and the conducting wire 51 of the second film sensor 31B include a conducting wire forming layer conducting wire forming layer 52C. As shown in FIG. 20, the conductive wire forming layer 52 </ b> C includes a main body layer 53 and a low reflection layer 54 provided on both the viewer side and the display device side of the main body layer 53. For this reason, the occurrence of light reflection can be suppressed on both sides of the main body layer 53. Thereby, it is possible to sufficiently ensure the visibility of the video.

(Modified example of conductor arrangement)
Further, in the above-described embodiment and each of the above-described modifications, an example is shown in which both the conducting wire 51 of the first film sensor 31A and the conducting wire 51 of the second film sensor 31B are located on the observer side of the support 32. However, it is not limited to this. For example, as shown in FIG. 21, the conducting wire 51 of the first film sensor 31A is located on the viewer side of the support 32, while the conducting wire 51 of the second film sensor 31B is located on the display device side of the support 32. You may do it.

  In the example shown in FIG. 21 as well, the types of the conductive wire forming layers constituting the conductive wire 51 of the first film sensor 31A and the conductive wire 51 of the second film sensor 31B are not particularly limited. That is, the conducting wire 51 of the first film sensor 31A may be configured by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C. Similarly, the conducting wire 51 of the second film sensor 31B may be constituted by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C. In the example shown in FIG. 21, the lead forming layer 52B or the lead forming layer 52C is preferably used as the lead forming layer constituting the lead 51 of the second film sensor 31B. In this case, since the low reflection layer 54 exists between the main body layer 53 of the conducting wire 51 and the support body 32, the external light incident on the touch panel 30 from the observer side is the main body layer of the conducting wire 51 of the second film sensor 31B. It is possible to prevent the light from being reflected by 53 and returning to the viewer side.

  Further, as shown in FIG. 22, the conducting wire 51 of the first film sensor 31A is located on the display device side of the support 32, while the conducting wire 51 of the second film sensor 31B is located on the observer side of the support 32. You may do it.

  Also in the example shown in FIG. 22, the type of the conductive wire forming layer constituting the conductive wire 51 of the first film sensor 31A and the conductive wire 51 of the second film sensor 31B is not particularly limited. That is, the conducting wire 51 of the first film sensor 31A may be configured by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C. Similarly, the conducting wire 51 of the second film sensor 31B may be constituted by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C. In the example shown in FIG. 22, the lead forming layer 52 </ b> B or the lead forming layer 52 </ b> C is preferably used as the lead forming layer constituting the lead 51 of the first film sensor 31 </ b> A. In this case, since the low reflection layer 54 exists between the main body layer 53 of the conducting wire 51 and the support body 32, external light incident on the touch panel 30 from the observer side is the main body layer of the conducting wire 51 of the first film sensor 31A. It is possible to prevent the light from being reflected by 53 and returning to the viewer side.

(Modified example of cross-sectional shape of conducting wire)
Next, a preferred example of the cross-sectional shape of the conducting wire 51 when the conducting wire 51 is provided on the display device side of the support 32 will be described with reference to FIG. In FIG. 23, an example in which the conductive wire 51 is configured from the conductive wire forming layer 52C will be described. However, the present invention is not limited to this example. Good.

  As shown in FIG. 23, the conducting wire forming layer 52 </ b> C of the conducting wire 51 has a tapered shape that tapers toward the display device 15. In this case, the external light L incident on the touch panel 30 along the direction inclined from the normal direction of the support 32 is not incident on the side surface of the conductor 51 because of the tapered shape of the conductor formation layer 52C. You can go through. For this reason, it can further suppress that external light is reflected by the conducting wire 51 and returns to the observer side.

  The specific taper shape of the conducting wire forming layer 52C is appropriately set according to the assumed degree of inclination of external light, for example, the angle formed by the normal direction of the support 32 and the side surface of the conducting wire 51, for example. Is in the range of 10-30 °.

  In addition, although the some modification with respect to this Embodiment mentioned above has been demonstrated, naturally, it can also apply combining a some modification suitably.

Fifth Embodiment Next, a fifth embodiment of the present invention will be described with reference to FIGS. In the present embodiment, an example in which the conductive wires 51 are provided on both sides of the support 32 will be described. In the present embodiment, the same parts as those in the above-described embodiments are denoted by the same reference numerals, and detailed description thereof is omitted. In addition, when it is clear that the operational effects obtained in each embodiment can be obtained also in this embodiment, the description thereof may be omitted.

24. Film Sensor As shown in FIG. 24, the film sensor 31 includes a support 32, a conductor 51 provided on the viewer-side surface (first surface) 32a of the support 32, and the display device side of the support 32. A conductive wire 51 provided on the surface (second surface) 32b. The conducting wire 51 on the first surface 32a side and the conducting wire 51 on the second surface 32b side are provided so as to cross each other. For this reason, according to this Embodiment, the touch panel 30 can be comprised by the film sensor 31 of 1 sheet.

  25 is an enlarged cross-sectional view of a part of the film sensor 31 shown in FIG. As shown in FIG. 25, the conducting wire 51 provided on the first surface 32a of the support body 32 includes the conducting wire forming layer 52A described above. Moreover, the conducting wire 51 provided on the second surface 32b of the support body 32 includes the conducting wire forming layer 52B described above. For this reason, it can suppress that the external light which injected into the touch panel 30 from the observer side is reflected by the conducting wire 51, and returns to the observer side. Thereby, it can suppress that the conducting wire 51 is visually recognized by an observer, and this can suppress that the visibility of the image from the display device 15 is hindered by the conducting wire 51.

  FIG. 26 is a cross-sectional view showing a laminate 60 for producing the film sensor 31 shown in FIG. As shown in FIG. 26, the laminate 60 includes a support 32, a conductor forming layer 52 </ b> A provided on the first surface 32 a of the support 32, and a conductor provided on the second surface 32 b of the support 32. Forming layer 52B.

(Variation regarding the type of conductive wire forming layer used)
In FIG. 25, the conductive wire 51 provided on the first surface 32a of the support 32 includes a conductive wire forming layer 52A, and the conductive wire 51 provided on the second surface 32b of the support 32 includes a conductive wire forming layer 52B. Indicated. However, the present invention is not limited to this, and the conducting wire 51 provided on the first surface 32a of the support body 32 may include the conducting wire forming layer 52B or the conducting wire forming layer 52C described above. That is, the conducting wire 51 provided on the first surface 32a of the support 32 may be configured by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C. Similarly, the conducting wire 51 provided on the second surface 32b of the support 32 may be constituted by any of the conducting wire forming layer 52A, the conducting wire forming layer 52B, or the conducting wire forming layer 52C.
Similarly, with respect to the laminated body 60, a conductor forming layer 52 </ b> A and a conductor forming layer are provided as a conductor forming layer provided on the first surface 32 a of the support 32 and a conductor forming layer provided on the second surface 32 b of the support 32. Either 52B or conductive wire forming layer 52C can be used arbitrarily.

  Preferably, as the conducting wire forming layer constituting the conducting wire 51 provided on the second surface 32b of the support 32, the conducting wire forming layer 52B or the conducting wire forming layer 52C is employed. In this case, since the low reflection layer 54 exists between the main body layer 53 of the conducting wire 51 and the support body 32, the external light incident on the touch panel 30 from the observer side is the main body layer of the conducting wire 51 of the second film sensor 31B. It is possible to prevent the light from being reflected by 53 and returning to the viewer side.

  In addition, although the some modification with respect to this Embodiment mentioned above has been demonstrated, naturally, it can also apply combining a some modification suitably.

(Other variations)
Moreover, in each above-mentioned embodiment, the example whose main body layer 53 of the conducting wire 51 is a layer containing 90 weight% or more of copper was shown. That is, the example in which the main body layer 53 is composed of copper or a copper-based alloy is shown. However, as long as the desired conductivity of the conductive wire 51 can be ensured, the metal element serving as the base of the main body layer 53 is not limited to copper, and various metal elements can be employed. For example, the main body layer 53 may be a layer containing 90% by weight or more of silver. For example, as the alloy constituting the main body layer 53, a silver alloy containing 90 weight or more of silver, copper and palladium, so-called APC alloy may be used. Hereinafter, a configuration example of other layers when the metal element serving as the base of the main body layer 53 is silver will be described.

  The configuration of the above-described low reflection layer 54 that constitutes the conducting wire 51 is appropriately selected in consideration of the adhesiveness with the main body layer 53 containing silver. For example, the low reflection layer 54 is a layer made of a silver compound made of silver oxide or silver nitride. In addition, since silver has high rust prevention property, the above-mentioned rust prevention layer 55 does not need to be provided.

Also in this modified example, as in the case of the above-described embodiments, the main body layer 53 and the low layer are set so that the three relational expressions d _M > d _L , n _M <n _L and k _M > k _L are satisfied. A reflective layer 54 is formed. Thereby, a high antireflection effect in the low reflection layer 54 can be realized.

Also in this modified example, as in the modified examples of the above-described embodiments, the low reflective layer 54 includes the first layer 54 a and the first layer 54 a between the first layer 54 a and the main body layer 53. And a second layer 54b provided to be in contact with each other. In this case, the first layer 54a is a layer containing a silver compound made of silver oxide, and the second layer 54b is a layer containing a silver compound made of silver nitride.
Also in this modification, d _M > d _L1 ≧ d _L2 , n _M <n _L2 , n _M <n _L1 , k _M > k _L2 as in the case of the above-described modification in which copper is used as the main body layer 53. The first layer 54a and the second layer 54b of the main body layer 53 and the low reflection layer 54 are configured so that the four relational expressions> k _L1 are satisfied. Thereby, a high antireflection effect in the low reflection layer 54 can be realized.

  Preferably, the low reflection layer 54 is configured to be etched simultaneously with the main body layer 53 by using an etching solution capable of dissolving the main body layer 53 containing silver. Thereby, the man-hour required for forming the conducting wire 51 can be reduced. As the etching solution, for example, phosphorous nitrate acetic acid water is used.

  EXAMPLES Next, although an Example demonstrates this invention further more concretely, this invention is not limited to description of a following example, unless the summary is exceeded.

(Preliminary evaluation 1)
A preliminary evaluation was conducted to search for conditions for producing copper oxide and copper nitride, which are candidate materials for the low-reflection layer 54, by sputtering. Specifically, the argon gas, oxygen gas, nitrogen gas introduced into the sputtering apparatus and the pressure in the sputtering apparatus were variously changed to form a copper compound such as copper oxide or copper nitride on the base film. Moreover, the composition of the formed copper compound was analyzed using X-ray photoelectron spectroscopy (ESCA). Table 1 shows the nine sputtering conditions and the composition analysis results of the obtained copper compound. In Table 1, in order from the left column, “power applied to target copper”, “flow rate of argon gas”, “flow rate of oxygen gas”, “flow rate of nitrogen gas”, “pressure in the apparatus”, “Transport speed of base film”, “Analysis result of copper concentration in copper compound”, “Analysis result of oxygen concentration in copper compound”, “Analysis result of nitrogen concentration in copper compound” and “Analysis result of copper concentration in copper compound” Analysis result of carbon concentration "is shown.

  No. in Table 1 As shown in 1-3, as a result of performing sputtering by introducing argon gas and oxygen gas, copper oxide containing 46.6-47.2 atomic% of oxygen was obtained. In preliminary evaluation 2 and each example described later, No. 1 in Table 1 is used as copper oxide. The one shown in 1 was used. No. 1 in Table 1 As shown in 4-9, as a result of carrying out sputtering by introducing argon gas and nitrogen gas, copper nitride containing 2.6-4.8 atomic% of nitrogen was obtained. In preliminary evaluation 2 and each example described later, No. 1 in Table 1 is used as copper nitride. The one shown in 7 was used.

(Preliminary evaluation 2)
The above relation formula _{d M> d L, n M} <n L, k M> k L
Or _{d M> d L1 ≧ d L2} , n M <n L2, n M <n L1, k M> k L2> k L1
Among these, candidates for materials that can satisfy the conditions regarding the average refractive index and the average extinction coefficient were searched. Specifically, the refractive index and extinction coefficient of copper and silver were measured as candidates for the material constituting the main body layer 53. Further, as a candidate for the material constituting the low reflection layer 54 (the first reflection layer 54a and the second layer 54b when the low reflection layer 54 is composed of a plurality of layers, for example, two layers), the table of the preliminary evaluation 1 described above is used. No. 1 No. 1 copper oxide and No. 1 For the copper nitride shown in Fig. 7, the refractive index and extinction coefficient were measured.

  The result of having measured the refractive index of copper oxide, copper nitride, copper, and silver is shown in FIG. In FIG. 27, symbols nL (CuO), nL (CuN), nM (Cu), and nM (Ag) represent the measurement results of the refractive indexes of copper oxide, copper nitride, copper, and silver, respectively. Moreover, the result of having measured the extinction coefficient of copper oxide, copper nitride, copper, and silver is shown in FIG. In FIG. 28, symbols kL (CuO), kL (CuN), kM (Cu), and kM (Ag) represent the measurement results of the extinction coefficients of copper oxide, copper nitride, copper, and silver, respectively. The refractive index and extinction coefficient of copper oxide and copper nitride were measured for each light wavelength while changing the light wavelength in 1 nm increments. 27 and 28 show the results of connecting each measurement point with a line. As a measuring instrument, an optical film thickness measuring system DF-1042RT manufactured by Techno Synergy was used.

As shown in FIG. 27, the refractive index of copper oxide and copper nitride was larger than the refractive indexes of copper and silver in the entire light wavelength range of 400 to 700 nm. As shown in FIG. 28, the extinction coefficients of copper oxide and copper nitride were smaller than the extinction coefficients of copper and silver in the entire light wavelength range of 400 to 700 nm. Therefore, the above-mentioned d _M > d _L , n _M <n _L and k _M > are established by forming the main body layer 53 using copper or silver and forming the low reflective layer 54 using copper oxide or copper nitride. Three relational expressions k _L can be satisfied.

Furthermore, as shown in FIG. 28, the extinction coefficient of copper nitride was larger than the extinction coefficient of copper oxide in the entire light wavelength range of 400 to 700 nm. Therefore, the above-mentioned d _M > d _L1 ≧ d _{L2 is} obtained by forming the first layer 54a of the low reflection layer 54 using copper oxide and forming the second layer 54b of the low reflection layer 54 using copper nitride. , N _M <n _L2 , n _M <n _L1 and k _M > k _L2 > k _L1 can be satisfied.

  Hereinafter, the sample of the laminated body provided with the main body layer 53 and the low reflection layer 54 which were comprised using each above-mentioned material is produced, and the result of having measured the reflectance of the sample is famous.

Example 1
As shown in FIG. 29, a sample of a laminate including a support 32 and a conductive wire forming layer 52A provided on the first surface 32a of the support 32 was prepared. The conducting wire forming layer 52A includes a main body layer 53 and an antireflection layer 54 arranged in this order from the support 32 side. As a material constituting the base film 32 of the support 32, PET was used. As a material constituting the undercoat layers 35a and 35b of the support 32, an acrylic resin was used. As a material constituting the main body layer 53, copper was used. As a material constituting the antireflection layer 54, a copper compound made of copper oxide was used. As specific samples, the following three types with different thicknesses of the antireflection layer 54 were prepared.
Sample 11: Laminate including antireflection layer 54 made of copper oxide having a thickness of 30 nm Sample 12: Laminate including antireflection layer 54 made of copper oxide having a thickness of 40 nm Sample 13: Antireflection layer 54 made of copper oxide having a thickness of 50 nm For comparison, a laminate in which the antireflection layer 54 was not provided was prepared as Sample 01.

  The reflected light L ′ from each sample when the light L was incident on each sample was measured. The light L was incident on each sample from the conductive wire forming layer 52A side. Based on this result, the reflectance of light in each sample was calculated. The measurement was performed in increments of 10 nm within a light wavelength range of 360 to 740 nm. As a measuring device, CM-3600D made by Konica Minolta was used. FIG. 30 shows the measurement results of the reflectance in samples 01, 11, 12, and 13.

  As shown in FIG. 30, in the sample 01 in which the antireflection layer 54 is not provided, the reflectance is 30% or more in the entire wavelength region of 360 to 740 nm. In particular, in the wavelength region of about 600 nm or more, the reflectance was 90% or more. It is considered that the high reflectance in the wavelength region of about 600 nm or more is caused by copper constituting the main body layer 53.

  On the other hand, in the samples 11 to 13 in which the antireflection layer 54 is provided, the wavelength ratio lower than that in the case of the sample 01 was measured over the entire wavelength range of 360 to 740 nm. In particular, in samples 12 and 13, the reflectance was reduced to 20% or less in the wavelength region of about 600 to 700 nm. It can be said that the antireflection layer 54 is extremely effective in preventing the reddish light peculiar to copper from being visually recognized by an observer.

(Example 2)
The reflectance of the laminate including the antireflection layer 54 was measured in the same manner as in Example 1 except that a copper compound made of copper nitride was used as the material constituting the antireflection layer 54. As specific samples, the following three types with different thicknesses of the antireflection layer 54 were prepared.
Sample 21: Laminate including antireflection layer 54 made of copper nitride having a thickness of 20 nm Sample 22: Laminate including antireflection layer 54 made of copper nitride having a thickness of 40 nm Sample 23: Antireflection layer 54 made of copper nitride having a thickness of 60 nm FIG. 31 shows the reflectance measurement results of Samples 21, 22, and 23 together with the reflectance measurement results of Sample 01 described above.

  As shown in FIG. 31, also in the samples 21 to 23 provided with the antireflection layer 54 made of copper nitride, a wavelength ratio lower than that in the case of the sample 01 was measured in the entire wavelength range of 360 to 740 nm. In particular, in samples 22 and 23, the reflectance was reduced to about 30% in the wavelength region of about 600 to 700 nm. Thus, also in the present Example using copper nitride, the reddish light peculiar to copper was able to be suppressed similarly to the case of the above-mentioned Example 1 using copper oxide.

(Example 3)
The reflectance of the laminate including the antireflection layer 54 was measured in the same manner as in Example 1 except that the antireflection layer 54 includes the first layer 54a and the second layer 54b shown in FIG. As materials constituting the first layer 54a and the second layer 54b, a copper compound made of copper oxide and a copper compound made of copper nitride were used, respectively. As a specific sample, Sample 31 in which the thickness of the copper oxide of the first layer 54a is 20 nm and the thickness of the copper nitride of the second layer 54b is 20 nm was used.

  In the same manner as in Example 1, the reflectance of light when light was incident on the sample 31 from the conducting wire forming layer 52A side was measured. The measurement result of the reflectance in the sample 31 is shown in FIG. 33 together with the measurement result of the reflectance in the sample 01 described above.

  As shown in FIG. 33, the sample 31 having the antireflection layer 54 including the first layer 54a and the second layer 54b also has a lower wavelength ratio than the sample 01 in the entire wavelength range of 360 to 740 nm. It was done. In particular, in the wavelength region of about 500 to 700 nm, the reflectance was reduced to 10% or less.

Example 4
As shown in FIG. 34, a sample of a laminate including a support 32 and a conductor forming layer 52B provided on the second surface 32b of the support 32 was prepared. The conducting wire forming layer 52B includes an antireflection layer 54 and a main body layer 53 that are arranged in this order from the support 32 side. The structure of the support body 32 and the material constituting the main body layer 53 are the same as those in the first embodiment. As a material constituting the antireflection layer 54, a copper compound made of copper oxide was used. As specific samples, the following three types with different thicknesses of the antireflection layer 54 were prepared.
Sample 41: Laminate including antireflection layer 54 made of copper oxide having a thickness of 30 nm Sample 42: Laminate including antireflection layer 54 made of copper oxide having a thickness of 40 nm Sample 43: Antireflection layer 54 made of copper oxide having a thickness of 50 nm For comparison, a laminate in which the antireflection layer 54 was not provided was prepared as Sample 02.

  The reflected light L ′ from each sample when the light L was incident on each sample was measured. The light L was incident on each sample from the support 32 side. Based on this result, the reflectance of light in each sample was calculated. The measurement was performed in increments of 10 nm within a light wavelength range of 360 to 740 nm. As a measuring device, CM-3600D made by Konica Minolta was used. The reflectance measurement results for Samples 02, 41, 42 and 43 are shown in FIG.

  As shown in FIG. 35, in the sample 02 in which the antireflection layer 54 is not provided, the reflectance is 30% or more in almost the entire wavelength range of 360 to 740 nm. In particular, in the wavelength region of about 600 nm or more, the reflectance was 90% or more. It is considered that the high reflectance in the wavelength region of about 600 nm or more is caused by copper constituting the main body layer 53. Thus, even when the main body layer 53 is provided on the side opposite to the side on which light is incident, if the antireflection layer 54 is not provided, the redness due to the main body layer 53 is obtained. The reflected light is visually recognized by the observer.

  On the other hand, in the samples 41 to 43 provided with the antireflection layer 54, a lower wavelength ratio was measured in the entire wavelength range of 360 to 740 nm than in the case of the sample 02. Regarding the wavelength region of about 600 to 700 nm, the reflectance in Samples 42 and 43 was reduced to about 30% or less. Even when the antireflection layer 54 is provided on the side opposite to the light incident side, the antireflection layer 54 prevents the reddish light peculiar to copper from being viewed by an observer. It can be said that it functions extremely effectively.

(Example 5)
The reflectance of the laminate including the antireflection layer 54 was measured in the same manner as in Example 4 except that a copper compound made of copper nitride was used as the material constituting the antireflection layer 54. As specific samples, the following three types with different thicknesses of the antireflection layer 54 were prepared.
Sample 51: Laminate including antireflection layer 54 made of copper nitride having a thickness of 20 nm Sample 52: Laminate including antireflection layer 54 made of copper nitride having a thickness of 40 nm Sample 53: Antireflection layer 54 made of copper nitride having a thickness of 60 nm FIG. 36 shows the reflectance measurement results of samples 51, 52 and 53 together with the reflectance measurement results of sample 02 described above.

  As shown in FIG. 36, also in the samples 51 to 53 including the antireflection layer 54 made of copper nitride, a lower wavelength ratio was measured in the entire wavelength region of 360 to 740 nm than in the case of the sample 02. In particular, in samples 52 and 53, the reflectance was reduced to 20% or less in the wavelength region of about 600 to 700 nm. Thus, also in the present Example using copper nitride, the reddish light peculiar to copper was able to be suppressed similarly to the case of the above-mentioned Example 4 using copper oxide.

(Example 6)
The reflectance of the laminate including the antireflection layer 54 was measured in the same manner as in Example 4 except that the antireflection layer 54 includes the first layer 54a and the second layer 54b shown in FIG. As materials constituting the first layer 54a and the second layer 54b, a copper compound made of copper oxide and a copper compound made of copper nitride were used, respectively. As a specific sample, a sample 61 in which the thickness of the copper oxide of the first layer 54a is 20 nm and the thickness of the copper nitride of the second layer 54b is 20 nm was used.

  In the same manner as in Example 4, the reflectance of light when light was incident on the sample 61 from the support 32 side was measured. The measurement result of the reflectance in the sample 61 is shown in FIG. 38 together with the measurement result of the reflectance in the sample 02 described above.

  As shown in FIG. 38, the sample 61 having the antireflection layer 54 including the first layer 54a and the second layer 54b also has a lower wavelength ratio than the sample 02 in the entire wavelength range of 360 to 740 nm. It was done. In particular, in the wavelength range of about 500 to 700 nm, the reflectivity was reduced to 10% or less.

DESCRIPTION OF SYMBOLS 10 Display apparatus with a touch position detection function 15 Display apparatus 30 Touch panel 31 Film sensor 32 Support body 33 Base film 34a, 34b Primer layer 35a, 35b Undercoat layer 36 Adhesion layer 41 Detection pattern 51 Conductive wire 52A Conductive wire formation layer 52B Conductive wire formation layer 52C Conductive wire formation layer 53 Main body layer 54 Low reflection layer 54a First layer 54b Second layer 55 Rust prevention layer 60 Laminate

Claims (13)

A film sensor combined with a display device,
A support comprising a substrate film;
A plurality of detection patterns provided on the support,
The detection pattern is a conductive wire having light shielding properties and electrical conductivity, and is composed of conductive wires arranged in a mesh shape so that an opening is formed between the conductive wires,
The conducting wire includes a conducting wire forming layer having the following configuration (1), (2) or (3):
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conductive wire forming layer has the configuration of (1), the conductive wire is disposed on the observer side of the support,
When the conductive wire forming layer has the configuration (2), the conductive wire is disposed on the display device side of the support,
The main body layer is made of a metal material, and the thickness of the main body layer is 0.2 μm or less,
The thickness of the main body layer, the average refractive index for light with a wavelength of 400 to 700 nm and the average extinction coefficient are d _M , n _M and k _M , respectively, and the thickness of the low reflection layer and the average refractive index for light with a wavelength of 400 to 700 nm. and average extinction coefficient, respectively _d L, when the _{n L} and _{k L,} the following relationship _{d M> d L, n M} <n L, k M> k L
Is satisfied, a film sensor. A film sensor combined with a display device,
A support comprising a substrate film;
A plurality of detection patterns provided on the support,
The detection pattern is a conductive wire having light shielding properties and electrical conductivity, and is composed of conductive wires arranged in a mesh shape so that an opening is formed between the conductive wires,
The conducting wire includes a conducting wire forming layer having the following configuration (1), (2) or (3):
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conductive wire forming layer has the configuration of (1), the conductive wire is disposed on the observer side of the support,
When the conductive wire forming layer has the configuration (2), the conductive wire is disposed on the display device side of the support,
The main body layer is made of a metal material, and the thickness of the main body layer is 0.2 μm or less,
The low reflection layer includes a first layer, and a second layer provided between the first layer and the main body layer,
The thickness of the main body layer, the average refractive index for light with a wavelength of 400 to 700 nm and the average extinction coefficient are d _M , n _M and k _M , respectively, and the thickness of the first layer and the average refractive index for light with a wavelength of 400 to 700 nm. and average extinction coefficient of _{d L1, n L1} and _{k L1} respectively, the second layer thickness, and the average refractive index and average extinction coefficient, respectively for light having a wavelength 400 to 700 nm _{d L2, n L2} and _{k L2} to time, the following relational expression _{d M> d L1 ≧ d L2} , n M <n L2, n M <n L1, k M> k L2> k L1
Is satisfied, a film sensor. The support further includes an observer-side undercoat layer provided on the observer side of the base film,
The film sensor according to claim 1 or 2, wherein a refractive index of the observer-side undercoat layer is in a range of 1.50 to 1.75. The observer-side undercoat layer includes an observer-side first undercoat layer, an observer-side second undercoat layer provided between the observer-side first undercoat layer and the base film, Including
The observer-side first undercoat layer has a refractive index in the range of 1.58 to 1.75, and the observer-side second undercoat layer has a refractive index of 1.50 to 1.60. And the refractive index of the observer-side first undercoat layer is larger than the refractive index of the observer-side second undercoat layer. Sensor. The support further includes a display device-side undercoat layer provided on the display device side of the base film,
The film sensor according to any one of claims 1 to 4, wherein a refractive index of the display device side undercoat layer is in a range of 1.50 to 1.75. The display device side undercoat layer includes a display device side first undercoat layer, a display device side second undercoat layer provided between the display device side first undercoat layer and the base film, Including
The display device side first undercoat layer has a refractive index in the range of 1.58 to 1.75, and the display device side second undercoat layer has a refractive index of 1.50 to 1.60. And the refractive index of the first undercoat layer on the display device side is larger than the refractive index of the second undercoat layer on the display device side. Sensor.   The film sensor according to any one of claims 1 to 6, wherein the support further includes an adhesion layer that is provided so as to be in contact with the conductor and is made of silicon oxide or copper nitride. The film sensor according to any one of claims 1 to 7, wherein the conductive wire forming layer of the conductive wire has the following configuration (1).
(1) Main body layer / low reflection layer in order from the support side The film sensor according to any one of claims 1 to 7, wherein the conductive wire forming layer of the conductive wire has the following configuration (2).
(2) Low reflection layer / main body layer in order from the support side The film sensor according to claim 1, wherein the conductive wire forming layer of the conductive wire has the following configuration (3).
(3) Low reflective layer / main body layer / low reflective layer in order from the support side A display device;
A touch panel sensor disposed on a display surface of the display device,
The said touch panel sensor is a display apparatus with a touch position detection function containing the film sensor as described in any one of Claims 1 thru | or 10. A laminate for producing a film sensor,
A support comprising a substrate film;
A conductive wire forming layer provided on the support and having the following configuration (1), (2) or (3):
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conductive wire forming layer has the configuration of (1), the conductive wire is disposed on the observer side of the support,
When the conductive wire forming layer has the configuration (2), the conductive wire is disposed on the display device side of the support,
The main body layer is made of a metal material, and the thickness of the main body layer is 0.2 μm or less,
The thickness of the main body layer, the average refractive index for light with a wavelength of 400 to 700 nm and the average extinction coefficient are d _M , n _M and k _M , respectively, and the thickness of the low reflection layer and the average refractive index for light with a wavelength of 400 to 700 nm. and average extinction coefficient, respectively _d L, when the _{n L} and _{k L,} the following relationship _{d M> d L, n M} <n L, k M> k L
Is a laminate. A laminate for producing a film sensor,
A support comprising a substrate film;
A conductive wire forming layer provided on the support and having the following configuration (1), (2) or (3):
(1) Main body layer / low reflection layer in order from the support side (2) Low reflection layer / main body layer in order from the support side (3) Low reflection layer / main body layer / low reflection layer in order from the support side When the conductive wire forming layer has the configuration of (1), the conductive wire is disposed on the observer side of the support,
When the conductive wire forming layer has the configuration (2), the conductive wire is disposed on the display device side of the support,
The main body layer is made of a metal material, and the thickness of the main body layer is 0.2 μm or less,
The thickness of the main body layer, the average refractive index for light with a wavelength of 400 to 700 nm and the average extinction coefficient are d _M , n _M and k _M , respectively, and the thickness of the first layer and the average refractive index for light with a wavelength of 400 to 700 nm. and average extinction coefficient of _{d L1, n L1} and _{k L1} respectively, the second layer thickness, and the average refractive index and average extinction coefficient, respectively for light having a wavelength 400 to 700 nm _{d L2, n L2} and _{k L2} to time, the following relational expression _{d M> d L1 ≧ d L2} , n M <n L2, n M <n L1, k M> k L2> k L1
Is a laminate.

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