JP2015115394A - 半導体装置の製造方法 - Google Patents
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Abstract
Description
以下、図面に基づいて本発明の実施の形態を説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付し、その説明は繰返さない。また、本明細書中の結晶学的記載においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示している。また、負の指数については、結晶学上、”−”(バー)を数字の上に付けることになっているが、本明細書中では、数字の前に負の符号を付けている。また角度の記載には、全方位角を360度とする系を用いている。
まず、本発明の一実施の形態に係る製造方法によって製造される半導体装置100の一例としてのMOSFETの構成について説明する。
まず、基板準備工程(S10:図2)が実施される。具体的には、たとえばポリタイプ4Hを有する炭化珪素単結晶からなるインゴット(図示しない)をスライスすることにより、六方晶炭化珪素単結晶からなり、かつ導電型がn型のベース半導体基板11が準備される。ベース半導体基板11上にエピタキシャル成長によりn型のエピタキシャル層20が形成される。エピタキシャル層20にはたとえば窒素イオンなどの不純物が含まれている。炭化珪素基板10の表面10aの最大径は100mm以上であり、好ましくは150mm以上であり、より好ましくは200mm以上である。炭化珪素基板10の表面10aは、たとえば(000−1)面から8°以下程度オフした面であってもよいし、(0001)面から8°以下程度オフした面であってもよい(図5参照)。
本実施の形態に係るMOSFET100の製造方法によれば、粘着テープ1の第3の主面1aに固定された半導体基板16が収容室31内に配置され、かつ粘着テープ1の温度を100℃以上に保持しながら収容室31が排気される。これにより、粘着テープ1に含有または付着している水分が蒸発して水蒸気になり、当該水蒸気が収容室31から排気されることにより、半導体基板16周辺の水蒸気は除去される。そのため、当該水蒸気により半導体基板16上に形成されるドレイン電極15が酸化されることを抑制することができる。結果として、半導体基板16とドレイン電極15との接触抵抗を低減することができる。また、収容室31を排気する工程では、粘着テープ1の第4の主面1bと、基板保持部3との間に隙間を設けた状態で、粘着テープ1の温度を100℃以上に保持しながら収容室31が排気される。そのため、半導体基板16を大きく変形させることなく水蒸気を半導体基板16の第1の主面16aおよび粘着テープ1の第3の主面1aの間から排出することができる。結果として、半導体基板16の割れが発生することを抑制することができる。
1a 第3の主面
1b 第4の主面
3 基板保持部(ステージ)
3a 基板保持面
3b 加熱部
10 基板(炭化珪素基板)
10a 表面
10b 裏面
11 ベース半導体基板
12 上部素子構造
13 基板保持部
14 金属層
15 電極(ドレイン電極)
16 半導体基板
16a 第1の主面
16b 第2の主面
17 裏面保護電極
20 エピタキシャル層
21 ドリフト領域
22 ボディ領域
23 ソース領域
24 コンタクト領域
30 ゲート酸化膜
31 収容室
32 成膜室
33 連結部
34 成膜装置
40 ゲート電極
50 ソース電極
60 層間絶縁膜
70 表面保護電極
80 上部電極構造
90 パッシベーション膜
100 半導体装置(MOSFET)
G ガス
t 隙間
Claims (14)
- 第1の主面および前記第1の主面と反対側の第2の主面と有し、かつ前記第1の主面の最大径が100mm以上である半導体基板と、第3の主面および前記第3の主面と反対側の第4の主面を有する粘着テープと、前記半導体基板を保持可能に設けられた基板保持部とを準備する工程と、
前記半導体基板の前記第1の主面を前記粘着テープの前記第3の主面に固定する工程と、
前記粘着テープの前記第3の主面に固定された前記半導体基板を収容室内に配置する工程と、
前記粘着テープの温度を100℃以上に保持しながら前記収容室を排気する工程と、
前記収容室を排気する工程後に前記半導体基板の温度を低減する工程と、
前記半導体基板の温度を低減する工程後に前記半導体基板の前記第2の主面上に電極を形成する工程とを備え、
前記収容室を排気する工程は、前記粘着テープの前記第4の主面と、前記基板保持部との間に隙間を設けた状態で、前記粘着テープの温度を100℃以上に保持しながら前記収容室を排気する工程を含む、半導体装置の製造方法。 - 前記収容室を排気する工程は、前記粘着テープの前記第4の主面と、前記基板保持部との間に隙間を設けた状態で、前記粘着テープの温度を100℃以上に保持しながら前記収容室を排気する工程後、前記粘着テープの前記第4の主面を前記基板保持部に接触させた状態で、前記粘着テープの温度を100℃以上に保持しながら前記収容室を排気する工程を含む、請求項1に記載の半導体装置の製造方法。
- 前記基板保持部は、前記半導体基板および前記粘着テープを昇温可能に設けられた加熱部を含み、
前記粘着テープの前記第4の主面と、前記基板保持部との間に隙間を設けた状態で、前記粘着テープの温度を100℃以上に保持しながら前記収容室を排気する工程において、前記隙間は0.5mm以上2.0mm以下に維持される、請求項1または請求項2に記載の半導体装置の製造方法。 - 前記半導体基板の前記第1の主面を前記粘着テープの前記第3の主面に固定する工程後、前記粘着テープの温度を100℃以上に保持しながら前記収容室を排気する工程前に、前記半導体基板の前記第2の主面を研削する工程をさらに備えた、請求項1〜請求項3のいずれか1項に記載の半導体装置の製造方法。
- 前記半導体基板の前記第2の主面を研削する工程では、前記半導体基板の厚みが200μm以下になるまで前記半導体基板が研削される、請求項4に記載の半導体装置の製造方法。
- 前記収容室を排気する工程において、前記収容室内のH2O分圧は5×10-4Pa以下まで低減される、請求項1〜請求項5のいずれか1項に記載の半導体装置の製造方法。
- 前記収容室を排気する工程において、前記粘着テープの温度は120℃以上200℃以下に保持される、請求項1〜請求項6のいずれか1項に記載の半導体装置の製造方法。
- 前記半導体基板は炭化珪素を含む、請求項1〜請求項7のいずれか1項に記載の半導体装置の製造方法。
- 前記電極を形成する工程は、前記半導体基板上に金属層を形成する工程と、前記金属層をアニールする工程とを含む、請求項1〜請求項8のいずれか1項に記載の半導体装置の製造方法。
- 前記金属層を形成する工程において、前記収容室のH2O分圧は1×10-4Pa以下まで低減される、請求項9に記載の半導体装置の製造方法。
- 前記金属層を形成する工程は、スパッタリング法により行われる、請求項9または請求項10に記載の半導体装置の製造方法。
- 前記金属層を形成する工程では、前記半導体基板を冷却しながら前記金属層が形成される、請求項9〜請求項11のいずれか1項に記載の半導体装置の製造方法。
- 前記金属層を形成する工程は、前記半導体基板が前記収容室と連結して設けられている成膜室へ搬送される工程と、前記成膜室において前記半導体基板上に前記金属層が形成される工程とを含む、請求項9〜請求項12のいずれか1項に記載の半導体装置の製造方法。
- 前記金属層を形成する工程では、面内膜厚分布が6%未満である前記金属層が形成される、請求項9〜請求項13のいずれか1項に記載の半導体装置の製造方法。
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US11610773B2 (en) | 2017-11-17 | 2023-03-21 | Applied Materials, Inc. | Condenser system for high pressure processing system |
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US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
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US20170018429A1 (en) | 2017-01-19 |
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