JP2015107510A - Method for forming through-hole in glass substrate and method for manufacturing interposer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for disposing a through-hole at a desired position of a glass substrate with a high degree of precision after heat treatment.SOLUTION: A method for forming a through-hole in a glass substrate using a laser beam includes: (a) a step for forming a plurality of through-holes in a dummy glass substrate under a first condition using a laser beam; (b) a step for subjecting the dummy glass substrate to heat treatment; (c) a step for grasping a deviation of the formation position of each through-hole before and after the step of (b); (d) a step for forming a plurality of through-holes in a glass substrate with substantially the same dimensions and composition as the dummy glass substrate under the first condition using a laser beam, in which the formation position of each through-hole is determined by correcting the deviation of the formation position grasped in the step in (c); and (e) a step for subjecting the glass substrate to heat treatment under the heat treatment condition applied to the step in (b).

Description

  The present invention relates to a method for forming a through hole in a glass substrate and a method for manufacturing an interposer.

  2. Description of the Related Art A technique for forming a through hole in a substrate to be processed using laser light (hereinafter referred to as “a through hole processing technique using laser light”) is known.

  In this technique, through holes can be formed at desired positions on a substrate to be processed such as resin, silicon, and glass by optimizing the processing conditions (for example, Patent Document 1).

US Pat. No. 5,493,096

  However, when the through-hole processing technology using this laser beam is applied to a glass substrate, the inventors of the present application immediately after processing the through-hole, even if the through-hole is formed at a desired position, the subsequent heat treatment is performed. The present inventors have found that the position of the through hole may slightly shift.

  Even if such a shift in the through-hole formation position is slight, for example, in the field of a semiconductor device that requires high-precision processing such as an interposer, there is a possibility that it will be a big problem.

  The present invention has been made in view of such a background, and an object of the present invention is to provide a method capable of arranging a through hole at a desired position on a glass substrate with high accuracy after heat treatment. And Another object of the present invention is to provide a method for manufacturing an interposer in which a filling electrode is arranged at a desired position with high accuracy.

In the present invention, a method of forming a through hole in a glass substrate using laser light,
(A) forming a plurality of through holes in a dummy glass substrate under a first condition using laser light;
(B) heat treating the dummy glass substrate;
(C) a step of grasping the deviation of the formation position of each through hole before and after the step of (b);
(D) A step of forming a plurality of through holes on the glass substrate having substantially the same size and composition as the dummy glass substrate according to the first condition using the laser beam, wherein each through hole is formed. The position is determined by correcting the deviation of the formation position grasped in the step (c), and
(E) heat-treating the glass substrate under heat treatment conditions applied to the step (b);
Is provided.

  Here, in the method according to the present invention, in the step (d), the formation position of each through hole in the glass substrate is ΔP (μm), which is the amount of change in the position of the through hole of the dummy glass substrate before and after heat treatment. When the distance from the reference point of the dummy glass to the through hole before the heat treatment is d (μm), the correction coefficient α = 1 / (1− (ΔP / d)) obtained from ΔP and d is used. May be.

In the method according to the present invention, when the annealing point of the glass substrate is T _a (° C.),
The step (e) may include a step of holding the glass substrate for 1 minute to 2 hours in the range of the annealing point T _a ± 10 ° C.

  In the method according to the present invention, the first condition may include a step of forming a plurality of through holes using a discharge assist type laser hole machining method.

The present invention also provides a method for manufacturing an interposer,
(A) forming a plurality of through holes in the dummy glass substrate under a first condition using laser light; (b) heat treating the dummy glass substrate;
(C) a step of grasping the deviation of the formation position of each through hole before and after the step of (b);
(D) A step of forming a plurality of through holes on the glass substrate having substantially the same size and composition as the dummy glass substrate according to the first condition using the laser beam, wherein each through hole is formed. The position is determined by correcting the deviation of the formation position grasped in the step (c), and
(E) heat-treating the glass substrate under heat treatment conditions applied to the step (b);
(F) filling the through hole of the glass substrate with a conductive substance;
An interposer manufacturing method is provided.

  In the present invention, it is possible to provide a method capable of arranging a through hole at a desired position on a glass substrate with high accuracy after heat treatment. Moreover, in this invention, the manufacturing method of the interposer by which the filling electrode is arrange | positioned in the desired position with high precision can be provided.

It is the figure which showed schematically an example of the flow of the method of forming a through-hole in the glass substrate by one Example of this invention. It is the figure which showed typically the example of 1 form of the dummy glass substrate in which the several through-hole was formed. It is the figure which showed roughly an example of the discharge assistance type | formula laser hole machining apparatus which can be used when applying a discharge assistance type | formula laser hole machining system. It is the figure which showed typically an example of the position change behavior of the through-hole by the heat processing of a dummy glass substrate. It is the figure which showed typically the arrangement | sequence of the through-hole formed in the glass substrate for this process before heat processing. It is the figure which showed roughly an example of the flow of the manufacturing method of the interposer by one Example of this invention. It is the figure which showed typically the arrangement pattern of the through-hole formed in the dummy glass substrate. It is the graph which showed deviation | shift amount (DELTA) P from the arrangement | positioning target position of each through-hole after heat processing with respect to the distance d from the center C to an arrangement | positioning target position. It is the figure which showed schematically the 1st part of the arrangement | sequence of a through-hole in the glass substrate for this process before heat processing. It is the graph which showed deviation | shift amount (DELTA) P from the arrangement target position in each through-hole with respect to the distance d from the center C to an arrangement | positioning target position.

  Hereinafter, an embodiment of the present invention will be described.

In one embodiment of the present invention, a method of forming a through hole in a glass substrate using laser light,
(A) forming a plurality of through holes in a dummy glass substrate under a first condition using laser light;
(B) heat treating the dummy glass substrate;
(C) a step of grasping the deviation of the formation position of each through hole before and after the step of (b);
(D) A step of forming a plurality of through holes on the glass substrate having substantially the same size and composition as the dummy glass substrate according to the first condition using the laser beam, wherein each through hole is formed. The position is determined by correcting the deviation of the formation position grasped in the step (c), and
(E) heat-treating the glass substrate under heat treatment conditions applied to the step (b);
Is provided.

  As described above, a plurality of through holes can be formed at desired positions on a substrate to be processed such as resin, silicon, and glass by a through hole processing technique using laser light.

  Here, when a resin substrate or a silicon substrate is used as a substrate to be processed and a through-hole processing technique using a laser beam is applied, the possibility that residual stress is generated on the substrate is small. For this reason, in general, when a resin substrate or a silicon substrate is used, it is not necessary to perform a heat treatment after forming the through hole.

  On the other hand, when a through-hole processing technique using laser light is applied to a glass substrate, residual stress and / or warpage occurs in the glass substrate. For this reason, it is necessary to heat-treat the glass substrate after forming the through holes.

  However, the inventors of the present application, when applying this laser beam through-hole processing technology to a glass substrate, immediately after the formation of the through-hole, even if each through-hole is formed at a desired position on the glass substrate, It has been found that the position of the through hole may slightly shift due to the heat treatment. This displacement of the through-hole position is expected to occur as a result of, for example, small shrinkage in the glass substrate during heat treatment.

  Such displacement of the through-hole formation position can be a big problem in the field of semiconductor components and semiconductor devices that require high-precision processing dimensions, such as an interposer, even if it is slight. There is.

  In order to deal with such a problem, it is conceivable to pre-heat the glass substrate before applying the through-hole forming treatment to the glass substrate (hereinafter, such a coping method is referred to as “pre-heat treatment method”). Called). In this case, the glass substrate shrinks due to the preliminary heat treatment. For this reason, even if the main heat treatment of the glass substrate is performed after the through hole is formed, it is expected that the glass substrate is not substantially contracted and the position of the through hole is hardly displaced.

  However, in such a preliminary heat treatment method, in order to manufacture a glass substrate having a through hole, it is necessary to carry out the heat treatment step twice for one glass substrate. There is a problem that the cost is lowered and the cost is increased. Therefore, it is not practical to apply such a preliminary heat treatment method to an actual through hole processing process.

  On the other hand, in this invention, a through-hole formation process is implemented with respect to the glass substrate in the state which considered the shrinkage | contraction of the glass substrate after heat processing.

  In order to realize this, in the present invention, a dummy glass substrate having the same specifications as the glass substrate is used.

  More specifically, in the present invention, the through-hole forming process and the heat treatment are performed on the dummy glass substrate before the through-hole forming process is performed on the original glass substrate to be processed. Moreover, the shift | offset | difference of each through-hole position before and behind heat processing with respect to a dummy glass substrate is grasped | ascertained.

  In addition, this process, that is, the through-hole forming process for the glass substrate, takes into account the positional deviation of each through-hole grasped by this dummy glass substrate, that is, a condition that “corrects” the positional deviation of the through-hole due to heat treatment. Will be implemented.

  In this case, if heat treatment is performed on the glass substrate after the formation of the through hole under the same conditions as the dummy glass substrate, the position of each through hole is shifted by the amount grasped in advance by the dummy glass substrate. As a result, after the heat treatment, each through hole is arranged at a target position of the glass substrate.

  Therefore, in the method according to the present invention, each through hole can be arranged at a target position with high accuracy after the heat treatment.

  Here, in this invention, the problem of the productivity fall of a through-hole processing process which becomes a problem by the above-mentioned preliminary heat processing method is suppressed significantly.

  That is, in the present invention, once grasping the positional displacement behavior of the through-hole using a dummy glass substrate, as long as a glass substrate of the same specification as this dummy glass substrate is used, the same process is performed during the through-hole forming process. “Correction” can be applied. For this reason, unlike the preliminary heat treatment method described above, it is not necessary to perform the heat treatment step twice for each glass substrate, and the number of heat treatments is significantly suppressed.

  As a result, in the present invention, for example, the productivity of the manufacturing process of a glass substrate having a through hole such as an interposer can be increased, and the processing cost can be suppressed.

(Method of forming a through hole in a glass substrate according to an embodiment of the present invention)
Next, a method for forming a through hole in a glass substrate according to an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 schematically shows a flow of a method for forming a through hole in a glass substrate (hereinafter simply referred to as “first method”) according to an embodiment of the present invention.

As shown in FIG. 1, the first method is:
(A) a step of forming a plurality of through holes in the dummy glass substrate under a first condition using laser light (step S110);
(B) heat treating the dummy glass substrate (step S120);
(C) a step (step S130) of grasping a shift in the formation position of each through-hole before and after the step (b);
(D) A step of forming a plurality of through holes on the glass substrate having substantially the same size and composition as the dummy glass substrate according to the first condition using the laser beam, wherein each through hole is formed. The position is determined by correcting the displacement of the formation position grasped in the step (c) (step S140);
(E) a step (step S150) of heat-treating the glass substrate under the heat-treatment conditions applied to the step (b);
Have

  Hereinafter, each step will be described in detail.

(Step S110)
First, a dummy glass substrate is prepared. A plurality of through holes are formed in the dummy glass substrate.

  The dummy glass substrate is a substrate that is at least substantially equal in size and composition to the glass substrate used in step S140 (hereinafter referred to as “the glass substrate for processing”). The dummy glass substrate may be substantially the same glass substrate as the processing glass substrate.

  The through holes formed in the dummy glass substrate may be arranged in any pattern at any position of the dummy glass substrate. However, it is desirable that the formation position and pattern of the through hole coincide with the formation position and pattern of the through hole arranged in the glass substrate for heat treatment after the heat treatment in the subsequent step S150. However, in this process, the formation position and pattern of the through-hole formed in the dummy glass substrate do not need to completely match the formation position and pattern of the through-hole in the processing glass substrate. It may be. Alternatively, it may be in a completely different matrix form.

  FIG. 2 schematically shows an example of a dummy glass substrate in which a plurality of through holes are formed.

  As shown in FIG. 2, in this example, a total of 25 through holes 285 are formed in a substantially central portion of the dummy glass substrate 230. The through holes 285 constitute a 5 × 5 matrix array 290 at equal pitches in the X and Y directions.

  The opening size of each through-hole 285 is not particularly limited, and for example, the diameter of the opening may be in the range of 20 μm to 300 μm. However, the opening size of each through hole 285 is not necessarily the same, and each through hole 285 may have a different opening size.

  The number of the through holes 285, the pattern shape of the array 290, and the position of the array 290 on the dummy glass substrate 230 are merely examples, and the through holes 285 have other numbers and arrangement patterns. It may be formed at other arrangement positions on 230.

  Further, in FIG. 2, the dummy glass substrate 230 has a substantially disk shape. However, this is merely an example, and the dummy glass substrate 230 may have other shapes such as a rectangular disk and a square disk.

  The thickness of the dummy glass substrate 230 may be in a range of 0.05 mm to 0.70 mm, for example.

  The method used when forming the plurality of through holes 285 in the dummy glass substrate 230 is not particularly limited as long as it is a technique using laser light.

  For example, the laser processing method uses an optical system to irradiate the dummy glass substrate 230 with laser light from a laser light source, and when the through hole 285 is formed at the irradiation position, residual stress is generated and heat treatment is performed. Anything is necessary.

  Alternatively, the through hole 285 may be formed by a “discharge assist type laser hole machining method” as described below.

(About discharge assist type laser drilling method)
Here, with reference to FIG. 3, the discharge assist type laser hole machining method will be briefly described. In the present application, the “discharge assist type laser hole machining method” refers to the use of the discharge phenomenon between the first and second electrodes after forming a through hole in a glass substrate by laser light irradiation as shown below. It means the generic name of the technology that adjusts the shape of the through hole.

  FIG. 3 schematically shows an example of a discharge-assisted laser hole machining apparatus that can be used when implementing the discharge-assisted laser hole machining system.

  As shown in FIG. 3, the discharge assist type laser hole processing apparatus 200 includes a laser light source 210, a direct current high voltage power source 225, a first electrode 240, and a second electrode 245.

The type of the laser light source 210 is not particularly limited, and the laser light source 210 may be, for example, a CO ₂ laser.

  The first electrode 240 and the second electrode 245 are electrically connected to the conductor 250 and the conductor 255, respectively, and the conductor 250 and the conductor 255 are connected to the DC high voltage power source 225.

  In the example of FIG. 3, the first electrode 240 and the second electrode 245 are different in shape and arrangement form. That is, the first electrode 240 has a needle shape and is arranged away from the dummy glass substrate 230. On the other hand, the second electrode 245 has a substantially flat plate shape and is disposed immediately below the dummy glass substrate 230 so as to be in contact with the dummy glass substrate 230. The second electrode 245 can also function as a stage on which the dummy glass substrate 230 is placed.

  However, this is merely an example. For example, the second electrode 245 may be disposed on the bottom surface side of the dummy glass substrate 230 so as to be separated from the dummy glass substrate 230. The second electrode 245 may have a needle shape similar to that of the first electrode 240. In this case, a set of electrode pairs is configured between the first electrode 240 and the second electrode at a position facing each other with the dummy glass substrate 230 interposed therebetween.

  When forming a through hole in the dummy glass substrate 230 using such a discharge assist type laser hole processing apparatus 200, first, the dummy glass substrate 230 is disposed between both electrodes 240 and 245. Further, the dummy glass substrate 230 is placed at a predetermined position by moving the second electrode 245 (or a separate stage) in the horizontal direction.

  Next, laser light 213 is irradiated from the laser light source 210 toward the dummy glass substrate 230. As a result, the temperature at the irradiation position 283 of the laser beam 213 on the dummy glass substrate 230 is locally increased, the insulating material is sublimated, and a through hole 285 is formed here.

  After the through hole 285 is formed, a DC high voltage is applied between the electrodes 240 and 245 using the DC high voltage power source 225. Thereby, discharge occurs between the electrodes 240 and 245. Discharge tends to occur through the through hole 285. This is because at this position, the resistance is lower than the other parts. The shape of the through hole 285 is adjusted by the discharge.

  Next, the second electrode 245 (or a separate stage) is moved in the horizontal direction, and the dummy glass substrate 230 is disposed at a predetermined location. Thereafter, the second through hole is formed by the same process.

  By repeating such steps, a plurality of through holes 285 can be formed in the dummy glass substrate 230. For example, an array 290 of through holes 285 as shown in FIG. 2 can be formed on the dummy glass substrate 230.

  Here, in the present application, for simplification, the conditions for forming the through holes in the dummy glass substrate 230 in this step are collectively referred to as “first conditions”. The “first condition” includes, in addition to a processing method (that is, a general laser hole processing method / discharge assist type laser hole processing method), the type of laser light, laser light power, irradiation distance, and laser light spot. The diameter is included.

(Step S120)
Next, the dummy glass substrate 230 in which the through hole 285 is formed is heat-treated.

  Since the heat treatment conditions here are the same as the heat treatment conditions in step S160, detailed heat treatment conditions will be described in the column of (step S160).

(Step S130)
In a normal case, the relative positions of the through holes 285 of the dummy glass substrate 230 are shifted by the heat treatment in step S120.

  Therefore, in this step S130, the displacement behavior of the through hole 285 due to the heat treatment is grasped.

  Hereinafter, an example will be described.

  For example, the arrangement 290 of the through holes 285 in the dummy glass substrate 230 shown in FIG. 2 changes as shown in FIG. 4 due to the shrinkage of the dummy glass substrate 230 after the heat treatment.

  FIG. 4 schematically shows an example of the position change behavior of the arrangement 290 of the through holes 285 due to the heat treatment of the dummy glass substrate 230. In FIG. 4, it should be noted that the position change behavior of each through hole is exaggerated.

  In FIG. 4, each through-hole 285 constituting the array 290 is displayed by coordinates (x, y) on the XY plane with the through-hole 285 at the center of the array 290 as the origin C (0, 0). Here, it is assumed that the origin C (0, 0) is the center of the dummy glass substrate 230 (see FIG. 2), and the position does not change before and after the heat treatment. With this assumption, the coordinates C (0, 0) can be used as a reference for the relative position of each through-hole 285 before and after the heat treatment.

  For example, the position of each through-hole 285 changes as shown by the arrow in FIG. 4 by the heat treatment of the dummy glass substrate 230. That is, after the heat treatment, each through-hole 285 moves toward the through-hole 285 at the origin C (0, 0) in a direction in which the absolute value of the x value and / or y value of the coordinate decreases.

  Here, the length of each arrow corresponds to the relative change amount of the position of the through hole 285. Therefore, FIG. 4 shows that the positional deviation increases as the through-hole 285 has a larger arrow.

  Specifically, the position change amount of the through hole 285 changes according to the distance d from the origin C (0, 0), and the position change amount becomes larger as the through hole 285 has a larger distance d. For example, the amount of positional deviation after heat treatment of each through-hole 285 at coordinates (1, 1), (-1, 1), (-1, -1) and (1, -1) is substantially the same. Is larger than the displacement amount of each through-hole 285 at coordinates (1, 0), (0, 1), (-1, 0) and (0, -1). Similarly, the amount of positional deviation after heat treatment of each through-hole 285 at coordinates (2, 2), (−2, 2), (−2, −2) and (2, −2) is substantially the same, These are coordinates (2,1), (1,2), (−1,2), (−2,1), (−2, −1), (−1, −2), (1, − It becomes larger than the displacement amount of each through hole 285 of 2) and (2, -1).

  By using such XY coordinates, the position shift state of the through-hole 285 after the heat treatment in the dummy glass substrate 230 can be grasped.

  Note that the displacement behavior of the arrangement 290 of the through holes 286 shown in FIG. 4 is merely an example, and the arrangement 290 of the through holes 286 after the heat treatment may be displaced in another manner. In addition, for example, the origin C of the XY coordinates is not necessarily the through hole 285 at the center of the array 290, and any through hole 285 may be the origin C of the XY coordinates. Alternatively, one point in the region where the through hole 285 on the dummy glass substrate 230 is not formed may be set as the origin C.

(Step S140)
Next, a glass substrate to be processed (for example, a product), that is, a glass substrate for main processing is prepared. As described above, this processing glass substrate is a substrate having at least substantially the same dimensions and composition as the dummy glass substrate 230. The glass substrate for processing may be substantially the same glass substrate as the dummy glass substrate 230.

  Next, in step S <b> 110, a plurality of through holes are formed in the processing glass substrate according to the “first condition” applied when the through holes are formed in the dummy glass substrate 230. Thereby, a through-hole can be formed in the glass substrate for this process in the aspect substantially the same as the through-hole 285 formed in the dummy glass substrate 230. FIG.

  However, it should be noted that the through hole forming position of the processing glass substrate in step S140 is different from that of the dummy glass substrate 230 described above. That is, the through hole formation position of the glass substrate for processing is determined in consideration of the displacement behavior of each through hole 285 before and after the heat treatment obtained in step S130.

  Hereinafter, as an example, a case where an array of through-holes as shown in FIG. 2 is formed at the target position of the processing glass substrate will be considered.

  In this case, an array 390 of through holes formed in the processing glass substrate 330 is represented as shown in FIG.

  Here, in FIG. 5, the through holes 385 (385-1 to 385-25) constituting the array 390 are arranged in a 5 × 5 matrix at an equal pitch on the XY plane. The through hole 385-13 is arranged at the center C of the array 390, which is the center of the processing glass substrate 330. Further, in FIG. 5, the positions after the heat treatment of the through holes 385-1 to 385-25, that is, the arrangement target positions are indicated by broken-line circles.

  As can be seen from FIG. 5, each of the through holes 385-1 to 385-25 is disposed at a position where the change in the position of the through hole 285 shown in FIG. 4 before and after the heat treatment is corrected. In other words, the through holes 385-1 to 385-25 are arranged so as to be shifted from the respective arrangement target positions in consideration of the positional deviation due to the heat treatment.

  For example, the through-holes 385-8, 385-12, 385-14, and 385-18 are located outside the respective arrangement target positions by a first distance along a straight line connecting the respective arrangement target positions and the center C. Arranged to be far away. Further, the through holes 385-7, 385-9, 385-17, and 385-19 are located outside the respective arrangement target positions by a second distance along the straight lines connecting the respective arrangement target positions and the center C. Arranged to be far away. This second distance is greater than the first distance.

  Note that the through hole 385-13 arranged at the center C does not change the arrangement position before and after the heat treatment, and thus is already arranged at the arrangement target position at this stage.

  When each through-hole 385 is formed in the glass substrate for processing 330 in such an arrangement 390, when the glass substrate for processing 330 is heat-treated in the subsequent step S150, each through-hole 385-1 after the heat treatment is performed. 385-25 can be arranged at the respective arrangement target positions.

(Step S150)
Next, heat treatment is performed on the processing glass substrate 330 in which the through holes 385 are formed.

  The heat treatment conditions here are substantially equal to the heat treatment conditions for the dummy glass substrate 230 in step S120 described above.

  Here, each of the through holes 385-1 to 385-25 of the processing glass substrate 330 is positioned at a position determined so as to “correct” the positional deviation after the heat treatment, which is grasped by the dummy glass substrate 230. Is formed.

  Therefore, when the processing glass substrate 330 is heat-treated, the through-holes 385-1 to 385-25 after the heat treatment are arranged at desired positions of the processing glass substrate 330, that is, arrangement target positions. Become.

  For example, in the case of the arrangement 390 of the through holes 385 shown in FIG. 5, after the heat treatment of the processing glass substrate 330, each through hole 385 is arranged at a position indicated by a dotted circle.

Here, the conditions for the heat treatment are determined by the type of the glass substrate for main processing 330 to be used, the residual stress of the glass substrate for main processing 330 and / or the degree of warpage. For example, heat treatment, when the anneal point of the process for the glass substrate 330 was T _{a (°} C.), may be implemented to the maximum temperature T _max is in the range of T _a ± 10 ℃. The maximum temperature T _max is preferably in the range of T _a ± 5 ° C. Further, the heat treatment may be performed such that the holding time at the maximum temperature _Tmax is in the range of about 1 minute to 2 hours. This holding time is preferably in the range of 1 to 2 hours.

  Through the above steps, the through holes can be arranged with high accuracy at the arrangement target position of the glass substrate for heat treatment after the heat treatment.

(Method of manufacturing an interposer according to an embodiment of the present invention)
Next, a method for manufacturing an interposer according to an embodiment of the present invention will be described with reference to the drawings.

  FIG. 6 schematically shows the flow of an interposer manufacturing method (hereinafter simply referred to as “second method”) according to an embodiment of the present invention.

As shown in FIG. 6, the second method is:
(A) a step (step S210) of forming a plurality of through holes in the dummy glass substrate under a first condition using a laser beam;
(B) heat treating the dummy glass substrate (step S220);
(C) a step (step S230) of grasping a shift in the formation position of each through-hole before and after the step (b);
(D) A step of forming a plurality of through holes on the glass substrate having substantially the same size and composition as the dummy glass substrate according to the first condition using the laser beam, wherein each through hole is formed. The position is determined by correcting the displacement of the formation position grasped in the step (c) (step S240);
(E) a step (step S250) of heat-treating the glass substrate under a heat treatment condition applied to the step (b);
(F) filling the through hole of the glass substrate with a conductive substance (step S260);
Have

  Of these, Steps S210 to S250 are substantially the same as Steps S110 to S150 in the first method described above, respectively. Therefore, step S260 will be described in detail here.

(Step S260)
Through step S210 to step S250, a glass substrate in which a plurality of through holes are arranged at predetermined positions can be obtained.

  In the next step S260, the formed through hole is filled with a conductive material.

  The conductive material is not particularly limited, and may be, for example, a metal such as copper, silver, and gold or an alloy thereof.

  The method for filling the through hole with the conductive material is not particularly limited. The conductive material may be filled in the through hole by, for example, a plating method such as an electrolytic plating method or an electroless plating method. Techniques for filling such conductive materials will be apparent to those skilled in the art.

  Thereby, the interposer in which the conductive material is filled in the through hole can be manufactured.

  As described above, each through hole is arranged at a predetermined position on the glass substrate with high accuracy.

  Therefore, in the second method, an interposer having conductive vias at predetermined positions can be manufactured with high accuracy.

  Examples of the present invention will be described below.

  Using the first method described above, through holes were formed in the glass substrate by the following procedure.

As the glass substrate for the treatment, a non-alkali glass having a rectangular shape of 150 mm × 150 mm × thickness 0.3 mm was used. Anneal point T _a of the process for the glass substrate is 710 ° C.. The same glass substrate for this processing was used for the dummy glass substrate.

  First, an array composed of a total of 25 through holes of 5 rows × 5 columns at an equal pitch was formed on the dummy glass substrate by the above-described “discharge assisting laser hole machining method”.

As the laser beam, a CO ₂ laser was used, and the laser beam power was 50 W. The spot diameter of the laser beam was 70 μmφ. The applied discharge voltage at the time of discharge was set to 5000V.

  FIG. 7 schematically shows an arrangement pattern of through holes formed in the dummy glass substrate.

  As shown in FIG. 7, the array 790 of the through holes 785 is arranged so that the through hole C at the center of the array 790 is arranged at the center of the dummy glass substrate 730. The pitch between the through holes 785 was 20 mm (20000 μm) in both the X direction and the Y direction.

  Next, the dummy glass substrate 730 was heat-treated. The heat treatment was performed by holding the dummy glass substrate 230 at 710 ° C. for 2 hours.

  Due to the heat treatment, the dummy glass substrate 730 was slightly shrunk, whereby the position of each through hole 785 was changed. More specifically, the position of each through hole 785 moves toward the center C along a straight line connecting the arrangement target position (position before the heat treatment) of each through hole 785 and the center C after the heat treatment. did. Moreover, this movement amount became larger as the through hole was located at a position where the distance from the center C was larger.

  FIG. 8 shows the amount of change in the position of each through hole 785 before and after heat treatment, that is, the amount of deviation ΔP (μm) from the target position of the through hole after heat treatment.

  In FIG. 8, the horizontal axis represents the distance from the center C of the array 790 to each through hole before heat treatment, that is, the distance d (μm) from the center C to the target position of each through hole. The axis represents the amount of deviation ΔP (μm) from the target position of the through hole after heat treatment.

  As shown in FIG. 8, it can be seen that a linear relationship is approximately established between the distance d from the center C to the through hole placement target position and the through hole position deviation ΔP before and after the heat treatment. The slope m (= ΔP / d) of the straight line was 0.001.

  Next, through holes were formed in a 5 × 5 matrix arrangement on the processing glass substrate under the same conditions as those of the discharge assist type laser hole machining method applied to the dummy glass substrate described above. The through hole at the center of the array was formed at the center position of the processing glass substrate.

  Here, each through hole was formed at a position where the relationship (m = 0.001) obtained in FIG. 7 was corrected.

  Hereinafter, with reference to FIG. 9, the specific determination operation of the through-hole formation position in the glass substrate for this process is demonstrated.

  FIG. 9 shows a first portion 990A of the array 990 of through-holes 985 in the main glass substrate 930 before heat treatment. The first portion 990A of the array 990 includes through holes 985-1 to 985-9.

  In FIG. 9, the through holes 985-1 to 985-9 are represented such that the through hole 985-7 at the center of the array 990 is the origin C (0, 0) of the XY plane.

  Further, in FIG. 9, the arrangement target positions (positions after the heat treatment) of the respective through holes are indicated by broken-line circles. For example, the arrangement target position of the through hole 985-1 is represented by coordinates (0, 40,000), the arrangement target position of the through hole 985-5 is represented by coordinates (20000, 20000), and the through hole 985-9 The placement target position is represented by coordinates (40000, 0).

  Although not shown in FIG. 9, the array 990 includes 25 through-holes arranged in a 5 × 5 matrix with the through-hole 985-7 as the center. For example, a part of the through holes constituting the array 990 (for example, the second part of the array) is arranged at a position symmetrical to the through holes 985-1 to 985-9 shown in FIG. Another part (for example, the third part of the array) of the through holes constituting 990 is disposed at a position symmetrical to the through holes 985-1 to 985-9 shown in FIG. 9 and the X axis. Further, another part of the through holes constituting the array 990 (for example, the fourth part of the array) is 180 ° around the origin C with the through holes 985-1 to 985-9 shown in FIG. Arranged at the rotated position.

  In such a notation, the position of a certain through hole 985 constituting the first portion 990A of the array 990 in the processing glass substrate 930 before the heat treatment, that is, the XY coordinates (a, b) are the coordinates of the arrangement target position. Is (x, y), and correction coefficient α = 1 / (1−0.001) = 1.001, a = αx, b = αy.

  For example, the through hole 985-1 is calculated as a = α × 0 = 0 and b = α × 40000 = 40040 because the coordinates (a, b) of the arrangement target position are (0, 40000). As a result, coordinates (a, b) = (0, 40040). Similarly, since the coordinates (a, b) of the arrangement target position of the through-hole 985-2 are (20000, 40000), a = α × 20000 = 220020 and b = (α × 40000 = 40040) are calculated. As a result, coordinates (a, b) = (20020, 40040) Since the coordinates (a, b) of the arrangement target position of the through holes 985-5 are (20000, 20000), a = α × 20000 = 20020 and b = α × 20000 = 220020 are obtained, and as a result, the coordinates (a, b) = (20020, 20020) are obtained. Since (a, b) is (40000, 0), a = α × 40000 = 40040 and b = α × 0 = 0 are calculated, and as a result, coordinates (a, b) = (40040, 0) Become

  The determination operation of the through hole formation position has been described above for each of the through holes 985-1 to 985-9 existing in the first portion 990A constituting the array 990 of the through holes. However, the formation positions of the respective through holes can be determined by the same operation also in parts other than the first part 990A constituting the array 990 of the through holes.

  For example, in the above operation, the formation position of each through hole included in the first quadrant can be determined on the XY plane having the through hole 985-7 as the origin. In the XY plane with the through hole 985-7 as the origin, the formation position of each through hole included in the second quadrant, the third quadrant, or the fourth quadrant can be determined by the same operation.

  Next, heat treatment was performed on the glass substrate for main treatment under the above-described conditions (conditions of holding at 710 ° C. for 2 hours). Moreover, the arrangement position of each through-hole was measured in the glass substrate for this processing after heat processing.

  FIG. 10 shows the amount of deviation ΔP (μm) from the target position of each through hole 985 after the heat treatment.

  In FIG. 10, the horizontal axis represents the distance d (μm) from the center C to the arrangement target position, and the vertical axis represents the displacement amount ΔP (μm) of the through-hole position before and after the heat treatment.

  As shown in FIG. 10, it can be seen that the positions of the respective through holes substantially coincide with the respective arrangement target positions in the processing glass substrate after the heat treatment. For example, even in a through hole having the largest deviation amount ΔP and a distance d from the center C of about 45000 μm, the deviation amount ΔP is suppressed to about 6 μm.

  This result suggests that the through-holes can be arranged with extremely good positional accuracy in the glass substrate for heat treatment after heat treatment in consideration of the positional accuracy of the used through-hole forming apparatus being about ± 5 μm. To do.

  Thus, it was confirmed that by using the first method according to the present invention, each through hole can be arranged with high accuracy at the target position of the glass substrate for heat treatment after heat treatment.

  INDUSTRIAL APPLICABILITY The present invention can be used for a technique for forming a through hole in a glass substrate, an interposer manufacturing technique, and the like.

DESCRIPTION OF SYMBOLS 200 Discharge auxiliary | assistant type laser hole processing apparatus 210 Laser light source 213 Laser light 225 DC high voltage power supply 230 Dummy glass substrate 240 1st electrode 245 2nd electrode 250 Conductor 255 Conductor 283 Irradiation position 285 Through-hole 290 Through-hole arrangement 330 Processing glass substrate 385 Through-hole 390 Through-hole array 730 Dummy glass substrate 785 Through-hole 790 Through-hole array 930 This processing glass substrate 985 Through-hole 990 Through-hole array 990A First part of array

Claims (5)

A method of forming a through hole in a glass substrate using laser light,
(A) forming a plurality of through holes in a dummy glass substrate under a first condition using laser light;
(B) heat treating the dummy glass substrate;
(C) a step of grasping the deviation of the formation position of each through hole before and after the step of (b);
(D) A step of forming a plurality of through holes on the glass substrate having substantially the same size and composition as the dummy glass substrate according to the first condition using the laser beam, wherein each through hole is formed. The position is determined by correcting the deviation of the formation position grasped in the step (c), and
(E) heat-treating the glass substrate under heat treatment conditions applied to the step (b);
Having a method.   In the step (d), the formation position of each through hole in the glass substrate is ΔP (μm), which is the amount of change in the position of the through hole of the dummy glass substrate before and after heat treatment, and heat treatment is performed from the reference point of the dummy glass. 2. The method according to claim 1, wherein d is determined using a correction coefficient α = 1 / (1− (ΔP / d)) obtained from ΔP and d, where d (μm) is a distance to the previous through hole. Method. When the annealing point of the glass substrate is T _a (° C.),
The method according to claim 1 or 2, wherein the step (e) includes a step of holding the glass substrate for 1 minute to 2 hours in a range of annealing point T _a ± 10 ° C.   4. The method according to claim 1, wherein the first condition includes a step of forming a plurality of through holes using a discharge assist type laser hole machining method. 5. An interposer manufacturing method comprising:
(A) forming a plurality of through holes in the dummy glass substrate under a first condition using laser light; (b) heat treating the dummy glass substrate;
(C) a step of grasping the deviation of the formation position of each through hole before and after the step of (b);
(D) A step of forming a plurality of through holes on the glass substrate having substantially the same size and composition as the dummy glass substrate according to the first condition using the laser beam, wherein each through hole is formed. The position is determined by correcting the deviation of the formation position grasped in the step (c), and
(E) heat-treating the glass substrate under heat treatment conditions applied to the step (b);
(F) filling the through hole of the glass substrate with a conductive substance;
A method of manufacturing an interposer having

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