JP2015106626A - Probing unit, burn-in screening system using probing unit, and burn-in screening method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a burn-in screening system and a burn-in screening method that use an unified probing unit, and that can quickly process a lot of wafers under highly-accurate temperature management and thermal distortion management when giving a temperature load, and that have high reliability and productivity.SOLUTION: A burn-in screening system 1 comprises: a semiconductor wafer 3 on which a semiconductor chip is formed; a DUT board 4 communicating signals with a tester at screening; a probe card 2 positioned with the semiconductor wafer 3; a temperature control stage 7 giving the semiconductor wafer 3 a temperature load; a temperature control stage tray 8 holding the temperature control stage; a first fixing device 11a fixing the probe card 2 to the temperature control stage tray 8; and a second fixing device 11b fixing the semiconductor wafer 3 to the temperature control stage 7.

Description

  The present invention relates to a probing unit, a burn-in screening system using the probing unit, and a burn-in screening method, and more particularly to probing used for wafer level (Wafer Level) reliability inspection. The present invention relates to a burn-in screening system comprising a unit and a probing unit and comprising an alignment device and a burn-in device, and a burn-in screening method comprising a probing unit alignment step and a burn-in step.

  Burn-in screening refers to a semiconductor chip reliability test in which an initial failure latent in a semiconductor chip is generated at an early stage by driving the semiconductor chip by applying a temperature load for a certain period of time and removing it. . A method of performing this burn-in screening simultaneously on all the semiconductor chips formed on the wafer simultaneously is called wafer level burn-in (WLBI). This WLBI is becoming mainstream in semiconductor chip reliability inspection instead of package burn-in performed in a packaged state.

  In the WLBI apparatus, a method is used in which the wafer burn-in apparatus performs loading and unloading for each wafer cassette in which a semiconductor wafer is stored. For example, Patent Document 1 discloses a wafer burn-in apparatus that can be loaded and unloaded for each wafer cassette in which a semiconductor wafer that has undergone burn-in inspection or a semiconductor wafer in which a trouble has occurred is stored. Here, the wafer burn-in apparatus includes a plurality of wafer burn-in units arranged side by side in the vertical direction or the horizontal direction. Each wafer burn-in unit includes a wafer tray, a wafer cassette storage unit, temperature control means, and a driver board. A semiconductor wafer on which a plurality of semiconductor integrated circuits are formed is held on the wafer tray. The wafer cassette storage unit stores a wafer cassette in which a probe card having a probe (probe) terminal is integrated at a position facing each external electrode of a plurality of semiconductor integrated circuits of a semiconductor wafer. The temperature control means controls the temperature of the semiconductor wafer held on the wafer tray of the wafer cassette. The driver board drives a plurality of semiconductor integrated circuits of the semiconductor wafer held on the wafer tray of the wafer cassette.

  The wafer cassette housed in the wafer cassette housing part is a ring-shaped sealing material made of a wafer tray made of a metal plate such as aluminum having a wafer holding part and silicon rubber fitted in a groove on the peripheral edge of the wafer tray. And a semiconductor wafer held by the wafer holding portion of the wafer tray and a probe card made of a glass substrate held on a sealing material fitted to the wafer tray and having a multilayer wiring layer. It is described that the wafer tray is provided with a vacuum valve for adjusting the pressure of the sealed space formed by the wafer tray, the sealing material, and the probe card. That is, the wafer cassette is composed of a wafer tray, a sealing material, a wafer, and a probe card that are integrated by making the inside a sealed space. It is shown that the temperature is controlled by temperature control means provided in the apparatus.

  By adopting the wafer cassette described above, the alignment operation to position the probe (probe) and the wafer to make the wafer cassette, and the burn-in operation to perform reliability inspection on the aligned wafer cassette, respectively It became possible to make it independent. That is, an aligned state can be maintained by making the inside of the wafer cassette a sealed space, and each wafer cassette can be heated as it is by the temperature control means provided in the wafer burn-in apparatus in the wafer burn-in apparatus. it can. As described above, by employing the wafer cassette, the alignment work and the burn-in work can be made independent and the work can be performed efficiently.

  Patent Document 2 discloses a wafer burn-in apparatus in which temperature control on a semiconductor wafer becomes accurate and temperature control on the semiconductor wafer can be performed with less time and less energy. Here, a lower temperature control means for controlling the temperature of the semiconductor wafer on the lower side of the wafer tray is provided inside the wafer cassette housing portion, and an upper temperature control for controlling the temperature of the semiconductor wafer on the upper side of the wafer tray. It is described that means are provided.

  Further, in the burn-in apparatus, a technique for fixing components using a vacuum suction device has been proposed. For example, Patent Document 3 discloses a semiconductor wafer container and a connection method that can reliably contact all bumps of a probe sheet with all inspection terminals of a semiconductor wafer and simultaneously perform burn-in screening on a large number of semiconductor wafers. A connection device and a method for inspecting a semiconductor integrated circuit are disclosed. Here, it is described that by placing a semiconductor wafer on a holding plate and sucking the semiconductor wafer from a suction tube, the semiconductor wafer is fixed to the holding plate and warping of the semiconductor wafer is eliminated. Further, in the sixth embodiment, a sealing material made of ring-shaped silicon rubber or the like that is elastically contracted greatly when pressed is arranged on the peripheral edge of the holding plate, and the wiring board and the holding plate are arranged. It is described that a sealed space is formed therebetween, and the sealed space is decompressed from a suction pipe that is opened and closed by an on-off valve provided on a holding plate. That is, a sealed space is formed between the wiring board and the holding plate to integrate the technique of sucking the semiconductor wafer from the suction tube to prevent the heated semiconductor wafer from warping and the wiring board and the holding plate. It is shown that the pressure is reduced.

  Patent Document 4 discloses a burn-in apparatus and a semiconductor wafer for reliably screening a semiconductor device formed on a semiconductor wafer. Here, the wafer holder includes a bottom plate, a vacuum chuck, an exhaust port, a pressure-bonding ring, an electrode plate, common wiring, a fixing plate, and a fixing metal fitting. The bottom plate includes a vacuum chuck and an exhaust port. It is described that a semiconductor wafer is placed on the bottom plate, air in the vacuum chuck is discharged from an exhaust port by a vacuum pump or the like, and the semiconductor wafer is adsorbed.

JP-A-11-186349 JP-A-11-238769 JP-A-8-5666 JP 2000-269278 A

  The above-described wafer cassette employs an integrated system in which the inside of the wafer tray, the sealing material, the wafer, and the probe card constituting the sealed space is a sealed space, the inside of the wafer is depressurized by a vacuum valve, and the entire surface of the wafer is pressurized by atmospheric pressure. The pressure reduction by the vacuum valve is a process after the wafer and the probe card are adjusted by the alignment device. Therefore, this pressure reduction causes the sealing material made of an elastic body such as silicon rubber to be deformed so as to squeeze inward. Further, the probe card and the wafer tray are deformed in a concave shape toward the inside due to the reduced pressure. Further, the air inside the sealed space moves delicately according to the deformation of these components. Further, there is a problem of integration in which the deformation caused by the integration or pressurization and the movement of the internal air cause a deviation between the probe of the probe card and the electrode of the wafer chip, resulting in a high contact failure rate.

  The wafer cassette is heated by temperature control means provided in the wafer burn-in apparatus, but the interior of the wafer burn-in apparatus is heated until heat is transferred or conducted to the semiconductor wafer itself. Further, since the wafer cassette itself is also sandwiched between the probe card and the wafer tray, thermal deformation occurs in the probe card or the wafer tray before the wafer is heated. However, since the amount of deformation varies depending on each part of each part, the shape of each part is slightly distorted. Due to this distortion, there is a problem of temperature control in which the probe card and the electrode of the chip are displaced to increase the contact failure rate.

  Furthermore, since the wafer cassette is configured as a sealed space by the wafer tray, the sealing material, the wafer, and the probe card constituting the wafer cassette, a temperature measuring device such as a thermocouple that directly measures the temperature distribution of the wafer is passed through the sealed space. Is difficult. Therefore, there is a problem that only temperature control with low accuracy can be performed.

  The purpose of this application is to solve such problems and to use an integrated probing unit to process a large number of wafers quickly under high-precision temperature control and thermal strain control when applying a temperature load. And a burn-in screening system and burn-in screening method with high productivity.

(Probing unit)
In order to achieve the above object, a probing unit according to the present invention is a probing unit used for burn-in screening at a semiconductor wafer level, and a DUT board that communicates signals with a semiconductor wafer on which a semiconductor chip is formed and a tester at the time of screening. A probe card that is aligned with the semiconductor wafer, a temperature control stage that applies a temperature load to the semiconductor wafer, a temperature control stage tray that holds and fixes the temperature control stage, and a probe card on the temperature control stage tray A first fixing device for fixing and a second fixing device for fixing the semiconductor wafer to the temperature control stage are provided.

  With the above configuration, the probing unit integrates the DUT board, the probe card, the temperature control stage, and the temperature control stage tray together with the semiconductor wafer. That is, the probe card is fixed to the temperature control stage tray by the first fixing device. Further, the semiconductor wafer is fixed to the temperature control stage by the second fixing device. On the other hand, the temperature control stage tray holds and fixes the temperature control stage. Therefore, the entire components of the probing unit are reliably integrated by the first fixing device and the second fixing device, and the reliability as the unit can be obtained.

  About this probing unit, the highly reliable integration using the first and second fixing devices does not cause a deviation between the probe of the aligned probe card and the electrode of the semiconductor chip of the semiconductor wafer. Therefore, in the burn-in screening at the semiconductor wafer level, the probing unit that is aligned and integrated can be easily transported and the subsequent work process can be quickly processed, thereby improving the productivity.

  Each probing unit individually incorporates a temperature control stage. Thereby, the heater which heats a semiconductor wafer can be provided adjacent to a semiconductor wafer, and load temperature can be given directly to the object of heating. Further, the temperature control stage is not enclosed in the sealed space. For this reason, it is not necessary to maintain an airtight state, and a temperature sensor for measuring the surface temperature of the semiconductor wafer can be freely arranged in the temperature control stage. This enables highly accurate temperature management when applying a temperature load, and a highly reliable burn-in screening can be performed.

  In addition, the probing unit is integrated and applied with a temperature load, so that distortion due to the temperature load generated at each part of the probing unit is suppressed. That is, the semiconductor wafer is fixed to the temperature control stage by the second fixing device by suction, but the heat source loaded by the temperature control stage is reliably conducted to the semiconductor wafer by this suction. That is, the temperature control stage can effectively take both the role of sucking the semiconductor wafer and the role of heating the semiconductor wafer. The temperature control stage tray is attracted and fixed to the probe card by the first fixing device, but holds the temperature control stage, so that the heat of the semiconductor wafer heated by the temperature control stage is not released to the outside. It has the function of. Further, distortion due to temperature load such as a DUT board, a probe card, and a temperature control stage tray, which are other components of the probing unit, is reduced because it is not brought into direct contact with the semiconductor wafer. This eliminates the positional deviation between the wafer and the probe, ensures high accuracy with respect to thermal distortion, and enables highly reliable burn-in screening.

  In the probing unit, the first fixing device includes a plurality of first suction pads that are provided on the probe card and suck the temperature control stage tray, and a first vacuum coupler that vacuum sucks the suction pad. Preferably, the first fixing device is preferably installed at a plurality of locations on the surface of the probe card on the semiconductor wafer side where the semiconductor wafer does not face. In particular, the first fixing device is a probe It is preferable to install the card at the four corners on the semiconductor wafer side of the card where the semiconductor wafer does not face. As a result, the integrated probing unit can more firmly fix the probe card with several suction pads and suppress distortion due to thermal expansion occurring at each part of the probe card. Further, the probing unit can be integrated by locally attracting the probe card without forming a sealed space inside the probe card.

  In the probing unit, the second fixing device includes a second suction pad that is provided on the temperature control stage and sucks the semiconductor wafer, and a second vacuum coupler that vacuum-sucks the second suction pad. It is preferable. As a result, the semiconductor wafer can be adsorbed freely to the temperature control stage, and the semiconductor substrate can be prevented from being warped and a highly reliable burn-in screening can be performed.

  In the probing unit, the first fixing device includes a first check valve connected to the first suction pad, and the second fixing device includes a second check valve connected to the second suction pad. A check valve is preferably provided. As a result, even if the suction pad is out of suction, the check valve can maintain the vacuum state, and the reliability as the probing unit can be obtained. In addition, the probing unit that is aligned and integrated can be easily transported and the subsequent work process can be quickly processed, thereby improving productivity.

  In the probing unit, it is preferable that the first suction pad is also connected to the second check valve so that the first suction pad and the second suction pad are vacuum-sucked together. As a result, when the probing unit is integrated, the probe card is fixed to the temperature control stage tray by the first fixing device, and the semiconductor wafer is fixed to the temperature control stage by the second fixing device. It is possible to secure integration reliability.

  In the probing unit, it is preferable that a reinforcing plate provided with a plurality of stiffeners for suppressing deformation of the DUT board or the probe card is attached to the DUT board. This prevents the DUT board or probe card from undergoing harmful deformation such as “warping” even when a temperature load is applied by the temperature control stage, and ensures reliable and productivity under highly accurate thermal strain management. High burn-in screening is possible.

  In the probing unit, the temperature control stage is preferably equipped with a heater for heating the semiconductor wafer and a temperature sensor for measuring the surface temperature of the semiconductor wafer. As described above, since the temperature control stage built in the probing unit is not in a sealed space, the heater for heating the semiconductor wafer can be disposed closer to the semiconductor wafer, and the thermal distortion with high accuracy when the temperature load is applied. Management becomes possible. In addition, a temperature sensor for measuring the surface temperature of the semiconductor wafer can be freely provided, and high-precision temperature management is possible when a temperature load is applied.

(Burn-in screening system)
In order to achieve the above object, a burn-in screening system using a probing unit according to the present invention is a burn-in screening system using a probing unit, in which the semiconductor wafer and the probe card of the probing unit held on the alignment stage are positioned. An alignment device to be aligned, and a burn-in device in which a tester is connected to a chamber having a unit holding portion for storing the probing unit. The burn-in device collectively includes a plurality of probing units separated from the alignment device. Burn-in screening is preferred. As a result, the alignment process between the semiconductor wafer and the probe card by the alignment apparatus and the burn-in screening process by the burn-in apparatus can be performed independently of each other. Increases efficiency and enables burn-in screening with high productivity.

(Burn-in screening method)
In order to achieve the above object, a burn-in screening method according to the present invention includes a step of aligning a probe card and a semiconductor wafer by an alignment device in a burn-in screening method at a semiconductor wafer level, a probe card, a DUT board, and a semiconductor Integrating a wafer, a temperature control stage, and a temperature control stage tray as a probing unit, separating the probing unit from the alignment device, storing a plurality of probing units in a burn-in device, and temperature control Applying a temperature load to the semiconductor wafer by the stage.

  With the above configuration, in the probing unit, the probe card and the semiconductor wafer are aligned by the alignment device before the probe card, the temperature control stage, and the temperature control stage tray are integrated with the semiconductor wafer. That is, after alignment in the alignment apparatus, the probe card is fixed to the temperature control stage tray by suction using the first fixing device, and the semiconductor wafer is fixed to the temperature control stage by suction using the second fixing device. Since the tray for the temperature control stage holds the temperature control stage, the entire components of the probing unit are held in a state where the probe card and the semiconductor wafer are aligned by the first fixing device and the second fixing device. It is surely integrated as it is. Thereby, high reliability as a probing unit can be obtained.

  Further, the probing unit is separated from the alignment device in an integrated state and stored in the burn-in device. That is, in the alignment device, the probing unit is reliably integrated as a whole by the fixing device. Therefore, there is very little possibility that contact between the probe card and the semiconductor wafer in the probing unit is shifted due to separation such as separation from the alignment apparatus and storage in the burn-in apparatus, resulting in poor contact. Thereby, burn-in screening with high reliability can be performed.

  Further, each probing unit is integrated with the temperature control stage incorporated therein and stored in the burn-in apparatus. Thereby, when driving the semiconductor chip at a high temperature, a temperature load can be reliably applied by the temperature control stage corresponding to the individual wafer. In addition, since the temperature control stage is not in a sealed space, a heater for heating the semiconductor wafer can be provided closer to the semiconductor wafer, and thermal strain management can be performed with high accuracy when a temperature load is applied.

  In the burn-in screening method, in the alignment step by the alignment device, the fixing is performed by fixing the semiconductor wafer to the temperature control stage, and in the step in which the probing unit is integrated, the single fixing device is used. It is preferable that the probe card is fixed to the temperature control stage tray and the semiconductor wafer is fixed to the temperature control stage by another fixing device and integrated as a probing unit. Thus, when integrating the probing unit, the probe card can be fixed to the temperature control stage tray while fixing the semiconductor wafer to the temperature control stage, and the integration reliability can be ensured.

  Furthermore, in the burn-in screening method, it is preferable that the temperature control stage already includes a heater that applies a temperature load to the semiconductor wafer in the step of integrating the probing unit, and a temperature sensor that measures the surface temperature of the semiconductor wafer. . As described above, the temperature control stage is separated from the alignment apparatus in a state where the heater and the temperature sensor are incorporated, and is stored in the burn-in apparatus. Thereby, a temperature load can be applied intensively to the semiconductor wafer during burn-in screening, and highly accurate temperature management can be performed.

  As described above, according to the probing unit, the burn-in screening system, and the burn-in screening method according to the present invention, the integrated probing unit can be used for high-precision temperature management and thermal strain management when applying a temperature load. Therefore, it is possible to provide a burn-in screening system and a burn-in screening method that can process a large number of wafers quickly and have high reliability and productivity.

It is sectional drawing which shows schematic structure of one Embodiment of the probing unit which concerns on this invention. It is the disassembled perspective view which shows the probing unit comprised from a reinforcement board, a probe card, a semiconductor wafer, a temperature control stage, and a tray for temperature control stages. It is AA sectional drawing of FIG. 1 which shows the reinforcement board of a probing unit, and a part of DUT. It is the top view which looked at the temperature control stage of a probing unit, and the tray for temperature control stages from the BB cross section of FIG. It is CC sectional drawing of FIG. 1 which shows a probe card from the back surface. It is detail drawing which shows a 1st adsorption | suction apparatus and a 2nd adsorption | suction apparatus. It is detail drawing which shows the method of connecting the probe provided in a probe card, and the semiconductor chip formed on the semiconductor wafer by alignment. It is explanatory drawing which shows schematic structure of one Embodiment of the whole burn-in screening system which concerns on this invention. It is explanatory drawing which shows the structure of an alignment apparatus. It is explanatory drawing which shows the structure of a burn-in apparatus. It is a flowchart which shows schematic structure of one Embodiment of the burn-in screening method which concerns on this invention.

(Probing unit)
Hereinafter, an embodiment of a probing unit (Probing Unit) 1 according to the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing a schematic configuration of one embodiment of a probing unit 1 according to the present invention. 2 is an exploded perspective view of the probing unit 1 including a reinforcing plate 5, a probe card (Probe Card) 2, a semiconductor wafer (Semiconductor Wafer) 3, a temperature control stage 7, and a temperature control stage tray 8. FIG. It shows with.

  The probing unit 1 according to the present invention performs burn-in screening, which is a kind of reliability inspection of the semiconductor wafer 3. This burn-in screening method is roughly classified into a package burn-in performed in a package state and a wafer level burn-in (WLBI) performed in a wafer state. The probing unit 1 according to the present invention is used for the latter wafer level burn-in. Burn-in screening refers to a method of early detection and removal of an initial failure of a semiconductor chip 6 by operating the semiconductor chip 6 at a high temperature for a certain time. Also, the wafer level (Wafer Level) means that an electrical inspection of a semiconductor device is performed before the semiconductor chip 6 is cut and separated from the semiconductor wafer 3. Furthermore, wafer level burn-in refers to a method in which all semiconductor chips 6 formed on the semiconductor wafer 3 are simultaneously and collectively implemented. Specifically, the probe card 2 is brought into contact with the electrodes of the semiconductor chip 6 formed on the semiconductor wafer 3. Then, a tester 25 is connected to the probe card 2, electricity is supplied from a power source to input / output signals, and the semiconductor chip 6 on the semiconductor wafer 3 is driven at a high temperature. Then, ON / OFF screening of the semiconductor chip 6 is performed to generate an initial defective semiconductor chip 6 and remove it.

  A probing unit 1 according to the present invention will be described with reference to FIGS. Here, probing refers to a semiconductor with poor contact, which is brought into electrical contact with the bonding pads of the semiconductor chip 6 using a metal probe 16 when performing electrical inspection at the wafer level. An operation of marking the chip 6 to eliminate it. The probing unit 1 according to the present invention is a unit developed to capture the above-described wafer-level burn-in screening as a system and improve the effect of the entire system. The basic processes in wafer level burn-in screening are the alignment process and the burn-in process. The alignment is a step of bringing the probe card 2 into contact with the electrodes of the semiconductor chip 6 formed on the semiconductor wafer 3 and is performed in the alignment apparatus 20 described later. On the other hand, the burn-in is a process in which the semiconductor chip 6 is operated at a high temperature for a certain period of time to detect and remove an initial failure of the semiconductor chip 6 at an early stage, and is performed in a burn-in apparatus 30 described later. The probing unit 1 according to the present invention is a specimen for reliability inspection that is manufactured in the alignment process, brought into the burn-in process, and probing. In the system constituted by the alignment apparatus 20 and the burn-in apparatus 30, A unit 1 designed and developed to achieve a more effective reliability test.

  The probing unit 1 includes a reinforcing plate 5, a DUT board 4, a probe card 2, a semiconductor wafer 3, a temperature control stage 7, and a temperature control stage tray 8 as shown in order from the top in the perspective view of FIG. . A semiconductor chip 6 to be screened is formed on the surface of the semiconductor wafer 3 to be inspected. The semiconductor wafer 3 and the probe card 2 are aligned (aligned) by the alignment device 20. That is, the probe 16 protruding from the probe card 2 contacts the electrode of the semiconductor chip 6 formed on the semiconductor wafer 3. In FIG. 1, the probing unit 1 is illustrated separately by the semiconductor chip 6 and the probe card 2 to be aligned, and the alignment is represented by arrows in the drawing. Then, the DUT board 4 supplies power and inputs / outputs signals to / from the tester 25 to perform screening.

  An important point in this screening is that if the probes 16 protruding from each probe card 2 do not properly contact the corresponding electrodes of the semiconductor chip 6, an abnormality occurs in the ON / OFF state of the semiconductor chip 6, which is normal. The semiconductor chip 6 is excluded as a defective product. Accordingly, the constituent elements of the probing unit 1 according to the present invention must be integrated. That is, after the alignment is performed by the alignment device 20, the reinforcing plate 5, the DUT board 4, the probe card 2, the semiconductor wafer 3, the temperature control stage 7, and the temperature control stage tray 8 are integrated until probing is completed. Must be made.

  Conventionally, there are two problems in integrating the probing unit 1 in wafer-level burn-in screening. The first problem is that “a temperature load must be applied to the semiconductor chip 6 while suppressing the thermal expansion of the probing unit 1”. In the case of the above-described prior art, when a thermal load is applied to the semiconductor wafer 3, thermal expansion occurs in components around the semiconductor wafer 3, and the thermal distortion is caused by the probes 16 protruding from the electrodes of the semiconductor chip 6 and the probe card 2. It will cause the deviation. Other components are heated before heat is transferred or conducted to the semiconductor wafer 3 itself, causing thermal deformation.

  Further, the second problem arises when a method of integrating the unit 1 by depressurizing and adsorbing the space including the semiconductor wafer 3 and the probe card 2 as in the prior art. For example, when the space including the semiconductor wafer 3 and the probe card 2 is depressurized, the air in the space moves and causes a shift. Further, when the space around the decompressed space is sealed with a sealing material or the like, external air enters and integrates due to impact or deformation when the unit 1 is moved from the alignment device 20 to the burn-in device 30. Will collapse. That is, since the total length of the sealing material is long, the sealing material is cut by a slight impact or deformation, and the sealing effect disappears.

  The probing unit 1 according to the present invention has a temperature control stage 7 that directly applies a temperature load to the semiconductor wafer 3 to the probing unit 1 itself and a temperature control stage tray 8 that holds the temperature control stage 7 with respect to the first problem. Solved the problem. Further, the second problem is solved by a fixing device (first fixing device, second fixing device) that integrates the components of the probing unit 1. Hereinafter, the temperature control mechanism and the integration mechanism according to these points will be described with reference to the drawings. Furthermore, the multifunctional characteristics of the temperature control stage 7 and the temperature control stage tray 8 will be described.

(Temperature control mechanism)
FIG. 3 is a cross-sectional view taken along the line AA of FIG. 1 showing a part of the reinforcing plate 5 and the DUT board 4 of the probing unit 1. In the present embodiment, a reinforcing plate 5 in which a circular stiffener 28a, a radial stiffener 28b, an outer frame 18 and the like form a network is attached to the outside of the DUT board 4 in order to suppress out-of-plane deformation due to a thermal load. The reinforcing plate 5 is provided with a reinforcing plate fixing hole 19 for connection to the DUT board 4, and the deformation of the DUT board 4 and the probe card 2 is reinforced by the reinforcing plate 5. The reinforcing plate fixing hole 19 is provided in the vicinity of the circumference of the circular alignment zone 40 where the semiconductor wafer 3 and the probe card 2 are aligned. Due to the circular stiffener 28a connecting the fixing holes 19, thermal expansion and contraction radially from the center of the circular alignment zone 40 is suppressed. Further, the out-of-plane deformation is suppressed even inside the alignment zone 40 by the radial stiffener 28b that reinforces the inside of the reinforcing plate fixing hole 19. Thus, the reinforcing plate 5 functions as a temperature control mechanism for the DUT board 4 and the probe card 2.

  In the present embodiment, a connector 27 is provided at one end of the DUT board 4, and this connector 27 is connected to the tester 25 to input / output signals. That is, the probe 16 protruding from each probe card 2 comes into contact with the corresponding electrode of the semiconductor chip 6 to measure ON / OFF of the semiconductor chip 6. The input / output signals are wired in a network shape within the thickness of the DUT board 4 and connected to a connector 27 provided at one end of the DUT board 4. The connectors 27 are arranged in a concentrated manner on the side surface of the DUT board 4, but are not limited to this method, and may be provided on the upper surface of the DUT board 4.

  FIG. 4 is a plan view of the temperature control stage 7 and the temperature control stage tray 8 of the probing unit 1 as seen from the BB cross section of FIG. This temperature control stage 7 is also called a heat-up stage. The temperature control stage 7 is equipped with a heater 22 for heating the semiconductor wafer 3 and a temperature sensor for measuring the surface temperature of the semiconductor wafer 3. In the present embodiment, the thermocouple 23 is used as the temperature sensor, but other temperature sensors may be used. The heater 22 and the thermocouple 23 are appropriately arranged or wired inside the temperature control stage 7. Further, in the alignment zone 40, a second suction port 13b of the second suction device 11b is provided. A second suction pipe 14b extends downward from the second suction port 13b, is aggregated by a connecting pipe 15, and is connected to the second vacuum coupler 12b via a second check valve 17b.

  FIG. 5 is a cross-sectional view taken along the line CC of FIG. A part of the DUT board 4 is visible on the back side of the probe card 2 in the drawing. Four first suction devices 11a are provided at the four corners. The first suction device 11a includes a plurality of first suction pads 9a provided on the probe card 2 and in contact with the temperature control stage tray 8, and a first vacuum coupler 12a connected to the first suction pad 9a. The first suction pad 9a has a first suction port 13a at the center thereof, a cover is provided around the first suction port 13a, and is sucked from the first suction port 13a by the first vacuum coupler 12a. A suction port reinforcement 41 for reinforcing the lid is provided. Further, the probe 16 is aligned and protrudes from the probe card 2 into the alignment zone 40.

(Integration mechanism)
In the present embodiment, as an example of a fixing device (including a first fixing device and a second fixing device), as shown in FIG. 1, a suction that is integrated using a first suction pad 9 a and a second suction pad 9 b. The apparatus (1st adsorption | suction apparatus 11a, 2nd adsorption | suction apparatus 11b) is shown. However, the apparatus is not limited to the adsorption device as long as it is a device that fixes the components of the probing unit 1, and may be, for example, an adhesive device. As shown in FIG. 1, the probing unit 1 according to the present invention has a first suction device 11 a that sucks and fixes a probe card 2 to a temperature control stage tray 8, and a semiconductor wafer 3 that is sucked to a temperature control stage 7. There are two types of fixing devices, the second adsorption device 11b for fixing the first adsorption device 11b. The suction pad 9 is a known product made of, for example, nitrile, silicone, or urethane. A plurality of the suction pads 9 are prepared, and are fixed and integrated as a whole stably while being locally fixed to the components to be fixed by the suction pads 9. These suction pads 9 have extremely high sealing performance in the suction pads 9 as compared with the sealing materials shown in the prior art. Moreover, the area | region to seal is limited to a very narrow location. The fixing device is not limited to the main suction pad 9 as long as it is a technique for integrating the constituent elements of the probing unit 1, and may be an adsorbent having another structure.

  The probing unit 1 according to the present invention includes a first suction device 11a that sucks and fixes the probe card 2 to the temperature control stage tray 8 by a first suction pad 9a. In the present embodiment, as shown in FIG. 2, one first suction pad 9 a is installed on each of the four corners of the probe card 2 on the side of the semiconductor wafer 3 where the semiconductor wafer 3 does not face. The number of the first suction pads 9a installed is not limited to this, and a smaller number or a larger number may be installed. Moreover, the location where this 1st suction pad 9a is installed is not restricted to this, You may install in a fewer location or a more location. Thereby, the integrated probing unit 1 fixes the probe card 2 more firmly by the plurality of first suction pads 9a. In addition, as shown in FIG. 1, the probing unit 1 includes a plurality of first suction ports 13a, a first suction pad 9a corresponding to each first suction port 13a, and a first connected to each first suction pad 9a. A check valve 17a is provided, and a first suction pipe 14a that connects the first vacuum coupler 12a and the first check valve 17a is provided. Thereby, even if it is a case where adsorption | suction of the 1st suction pad 9a cut | disconnects, a vacuum state can be maintained by the 1st non-return valve 17a. The first vacuum coupler 12a may be provided individually corresponding to each first suction pad 9a. In this case, the degree of suction can be controlled for each first suction pad 9a. On the other hand, the first vacuum coupler 12a may be connected to the plurality of first suction pads 9a and sucked together. In this case, the degree of suction of the plurality of first suction pads 9a can be collectively controlled.

  In addition, the probing unit 1 according to the present invention includes a second suction device 11b that sucks and fixes the semiconductor wafer 3 to the temperature control stage 7 with a second suction pad 9b that is smaller than the first suction pad 9a. Prepare. The temperature control stage 7 is provided with a second adsorption device 11b. The second suction device 11b includes a plurality of second suction ports 13b, a plurality of second suction tubes 14b extending from the second suction ports 13b to the inside of the temperature control stage 7, and a plurality of second suction tubes 14b. The connecting pipe 15 is connected, the second check valve 17b is connected to the connecting pipe 15, and the second vacuum coupler 12b is connected to the second check valve 17b. Thereby, even if it is a case where adsorption | suction of the 2nd suction pad 9b cut | disconnects, a vacuum state can be maintained by the 2nd non-return valve 17b. The second suction device 11b sucks and sucks the semiconductor wafer 3 disposed on the temperature control stage 7 from a suction port 13 provided on the surface of the temperature control stage 7 on the semiconductor wafer 3 side at a plurality of locations.

  Thus, the probe card 2 is fixed to the temperature control stage tray 8 by suction by the first suction device 11a. Further, the semiconductor wafer 3 is fixed to the temperature control stage 7 by suction by the second suction device 11b. On the other hand, the temperature control stage tray 8 holds the temperature control stage 7. Accordingly, the entire components of the probing unit 1 are integrated by the first adsorption device 11a and the second adsorption device 11b, and the reliability as a unit can be obtained. Further, the first suction device 11a is locally fixed by the first suction pad 9a, and the probe card 2 is fixed to the temperature control stage tray 8 by suction by setting a plurality of fixing points. Therefore, the space to be depressurized is limited to the inside of each first suction pad 9a, and does not affect the alignment between the semiconductor wafer 3 and the probe card 2, and the electrodes of the semiconductor wafer 3 and the probe card 2 are not affected. The occurrence of “deviation” with the probe 16 can be avoided. Moreover, since the outer periphery of the seal portion of each first suction pad 9a is short, external air invades due to pressure reduction, thermal load, or an impact when it is held sideways from the alignment device 20 to the burn-in device 30, and is integrated. There is very little risk of collapse.

  FIG. 6 shows a detailed cross section of the first adsorption device 11a and the second adsorption device 11b. Fig.6 (a) shows the 1st adsorption | suction apparatus 11a. A first suction pad 9a is used for the first suction device 11a and sucks by contacting the temperature control stage tray 8. The first suction pad 9 a is fixed to the probe card 2 by fixing bolts 29. And it is attracted | sucked from the 1st suction pipe 14a and the inside of the 1st suction pad 9a will be in a vacuum state. Moreover, FIG.6 (b) shows the 2nd adsorption | suction apparatus 11b. A second suction pad 9b is used for the second suction device 11b and sucks the semiconductor wafer 3 in contact therewith. The second suction pad 9b is directed in the opposite direction to the first suction pad 9a. The second adsorption device 11 b is fixed to the temperature control stage 7 by a tap 24. And it attracts | sucks from the 2nd suction pipe 14b and the inside of the 2nd suction pad 9b will be in a vacuum state.

(Multifunctionality of temperature control stage and temperature control stage tray)
As described above, the temperature control stage 7 has a function of the heater 22 that heats the semiconductor chip 6 provided on the semiconductor wafer 3 as a temperature control mechanism. On the other hand, the temperature control stage 7 has a role of sucking and fixing the semiconductor wafer 3 as an integrated mechanism. The temperature control stage 7 efficiently heats the entire semiconductor wafer 3 while being in direct contact with the semiconductor wafer 3. Further, the temperature control stage 7 directly sucks the semiconductor wafer 3 by the plurality of second suction pads 9b. That is, any mechanism becomes an effective mechanism by directly contacting the semiconductor wafer 3, and produces a synergistic effect. For this reason, the temperature control stage 7 becomes a multifunctional stage.

  The temperature control stage tray 8 is a “holding container” that holds the temperature control stage 7. Further, the temperature control mechanism functions as an “insulation vessel” that does not allow the heat of the semiconductor wafer 3 heated by the temperature control stage 7 to escape to the outside by being an outer wall of the temperature control stage 7. On the other hand, the temperature control stage tray 8 has a role as a “joining container” that is fixed by suction by the first suction pad 9a of the probe card 2 as an integrated mechanism. That is, the temperature control stage tray 8 becomes a multi-functional container suitable for the temperature control mechanism and the integrated mechanism by surrounding the temperature control stage 7.

(alignment)
FIG. 7 is a detailed view showing a method of connecting the probe 16 provided on the probe card 2 and the semiconductor chip 6 provided on the semiconductor wafer 3 by alignment. Alignment refers to bringing the tip of each probe 16 into contact with an appropriate location on the corresponding semiconductor chip 6 provided on the semiconductor wafer 3. The probe 16 is held by a probe holder 36. A probe 16 protrudes from the probe card 2 on the semiconductor wafer 3 side. A wire 42 extends on the DUT board 4 side of the probe holder 36. This wire 42 passes through the thickness of the DUT board 4 as shown by a broken line in FIG. 7, and is collected in the connector 27 shown in FIG. The connector 27 is connected to the tester 25, and an electrical signal generated when the probe 16 contacts the semiconductor chip 6 is transmitted to the tester 25.

  The probe card 2 includes an upper plate 37, an intermediate plate 38, and a lower plate 39, and holds the probe 16 and the probe holder 36. The configuration of the plate of the probe card 2 is not limited to this, and other configurations may be used as long as the probe 16 and the probe holder 36 are held. The upper plate 37 supports the tip position of the probe holder 36 on the DUT board 4 side. The lower plate 39 supports the tip position of the probe 16 on the semiconductor wafer 3 side.

  Inside the upper plate 37, an elastic spring (not shown) connected to the probe 16 is provided. The probe 16 is pushed out by the repulsive force of the elastic spring and stably contacts the electrode of the semiconductor chip 6. Since the alignment between the probe 16 provided on the probe card 2 and the semiconductor chip 6 provided on the semiconductor wafer 3 is performed by such a configuration, the probe card 2 provided before and after the semiconductor wafer 3 due to thermal load, When the DUT board 4 is warped by a thermal load, the probe 16 is displaced from the electrode at a predetermined position of the semiconductor chip 6.

(Burn-in screening system)
FIG. 8 shows a schematic configuration of one embodiment of the entire burn-in screening system 10 according to the present invention. FIG. 9 is an explanatory diagram showing the configuration of the alignment apparatus 20. FIG. 9A is an explanatory view seen from the side, and FIG. 9B is a cross-sectional view taken along the line DD in FIG. 9A. Further, FIG. 10 is a diagram illustrating the configuration of the burn-in device 30.

  As shown in FIG. 8, the burn-in screening system 10 using the probing unit 1 includes an alignment device 20 and a burn-in device 30. The probe card 2 and the semiconductor wafer 3 are aligned by the alignment device 20. The probe card 2, the temperature control device 7 and the temperature control stage tray 8 are integrated including the semiconductor wafer 3 by the first suction device 11 a and the second suction device 11 b including the suction pad 9, and the probing unit 1. It becomes. Further, the plurality of integrated probing units 1 are separated from the alignment device 20 and stored in the probing unit storage portion 34 in the chamber 32 of the burn-in device 30. Each probing unit 1 is connected to a tester 25 to perform burn-in screening.

  As shown in FIG. 9, the alignment apparatus 20 is provided with an alignment stage 21 in the apparatus. The alignment stage 21 includes a mechanism for sliding the probing unit 1. That is, it is a mechanism that slides in the X axis and Y axis directions orthogonal to each other on the plane, slides in the Z axis direction orthogonal to the XY plane, and further rotates in the Θ direction of the XY plane. On the alignment stage 21, the temperature control stage tray 8 of the probing unit 1 is installed and fixed. On the other hand, the probe card 2 is fixed to the upper part of the alignment apparatus 20. Thereby, the position of the semiconductor wafer 3 is adjusted by the alignment stage 21 and the probing unit 1 is aligned with the probe card 2 fixed to the alignment apparatus 20. During this alignment, a heater 22 and a thermocouple 23 are installed in the temperature control stage 7 in advance, and the probing unit 1 is integrated in this state.

  As shown in FIG. 10, the burn-in device 30 includes a chamber 32 and a tester 25, and the chamber 32 includes probing unit storage units 34 a to 34 x that store the probing units 1 a to 1 x, a control unit 31, and a power source 35. Prepare. The testers 25a to 25x are connected to the connector 27 of the DUT board 4 to input / output signals. In this manner, the burn-in device 30 and the alignment device 20 are completely separated, and a plurality of probing units 1a to 1x can be collectively subjected to burn-in screening. Thereby, the alignment process of the semiconductor wafer 3 and the probe card 2 by the alignment apparatus 20 and the burn-in screening process by the burn-in apparatus 30 can be performed independently.

  The temperature control stage 7 of the probing unit 1 applies a temperature load to the semiconductor wafer 3 by the heater 22 mounted in the burn-in apparatus 30 and measures the surface temperature of the semiconductor wafer 3 by the mounted thermocouple 23. . As a result, the probing unit 1 incorporates the temperature control stage 7 including the heater 22 and the thermocouple 23 in the pre-alignment stage.

(Burn-in screening method)
FIG. 11 is a flowchart showing a schematic configuration of one embodiment of the burn-in screening method according to the present invention. The order of each step is indicated by reference numerals S1 to S5.

  First, the probe card 2 and the semiconductor wafer 3 are aligned by the alignment device 20 (S1). By this alignment, the probe 16 corresponding to the electrode properly contacts the electrode of the semiconductor chip 6 formed on the semiconductor wafer 3. Then, the probe card 2, the DUT board 4, the semiconductor wafer 3, the temperature control stage 7, and the temperature control stage tray 8 are integrated as the probing unit 1 (S2). This integration may include a reinforcing plate 5. This step (S2) is performed promptly and continuously after step (S1) in the alignment apparatus 20. Then, the probing unit 1 is separated from the alignment device 20 (S3), and the plurality of probing units 1 are stored in the burn-in device 30 (S4). Further, a temperature load is applied to the semiconductor wafer 3 by the temperature control stage 7 (S5).

  By this method, before the probing unit 1 integrates the probe card 2, the temperature control stage 7, the temperature control stage tray 8, etc. with the semiconductor wafer 3, the probe card 2 and the semiconductor wafer 3 are aligned with the alignment device 20. Are aligned. That is, after alignment in the alignment device 20, the probe card 2 is fixed to the temperature control stage tray 8 by the first suction pad 9a of the first suction device 11a, and the semiconductor by the second suction pad 9b of the second suction device 11b. The wafer 3 is fixed to the temperature control stage 7. Since the temperature control stage tray 8 holds the temperature control stage 7, the probe card 2 and the semiconductor wafer 3 are aligned with each other by the first suction device 11 a and the second suction device 11 b. It is surely integrated while maintaining the state that has been achieved.

  Further, the probing unit 1 is separated from the alignment device 20 in an integrated state and is stored in the burn-in device 30. That is, in the alignment device 20, the probing unit 1 is reliably integrated as a whole by the suction devices 11a and 11b. For this reason, there is very little possibility that the probe card 2 in the probing unit 1 and the semiconductor wafer 3 are displaced from each other due to separation such as separation from the alignment device 20 and storage in the burn-in device 30 and contact failure.

  Further, in the step (S1) of alignment by the alignment apparatus 20, the semiconductor wafer 3 is fixed to the temperature control stage 7 by the second suction apparatus 11b and alignment is performed. On the other hand, in the step (S2) in which the probing unit 1 is integrated, the probe card 2 is fixed to the temperature control stage tray 8 and the semiconductor wafer 3 is fixed to the temperature control stage 7 by the first suction device 11a. The unit 1 is integrated. Thereby, when integrating the probing unit 1, the probe card 2 can be fixed to the temperature control stage tray 8 while fixing the semiconductor wafer 3 to the temperature control stage 7.

  Furthermore, the temperature control stage 7 already has a heater 22 for applying a temperature load to the semiconductor wafer 3 and a thermocouple 23 for measuring the surface temperature of the semiconductor wafer 3 in the step (S2) in which the probing unit 1 is integrated. Yes. That is, the probing unit 1 according to the present invention includes the temperature control stage 7 including the heater 22 and the thermocouple 23 from the alignment stage, and is separated from the alignment apparatus 20 with the heater 22 and the thermocouple 23 included. And stored in the burn-in device 30. Thereby, a temperature load can be concentrated on the semiconductor wafer 3 during the burn-in screening.

1 probing unit, 2 probe card, 3 semiconductor wafer, 4 DUT board, 5 reinforcing plate, 6 semiconductor chip, 7 temperature control stage, 8 (for temperature control stage) tray, 9 suction pad, 9a first suction pad, 9b first 2 suction pads, 10 burn-in screening system, 11 suction device (or fixing device), 11a first suction device (or first fixing device), 11b second suction device (or second fixing device), 12 vacuum coupler, 12a first 1 vacuum coupler, 12b second vacuum coupler, 13 suction port, 13a first suction port, 13b second suction port, 14 suction tube, 14a first suction tube, 14b second suction tube, 15 connection tube, 16 probe or probe Needle, 17 check valve, 17a first check valve, 17b second check valve, 18 outer frame, 19 reinforcing plate fixing hole, 20 alignment device, 21 Ment stage, 22 heater, 23 thermocouple or temperature sensor, 24 tap, 25 tester, 26 temperature control stage fixing hole, 27 connector, 28 stiffener, 28a circular stiffener, 28b radial stiffener, 29 fixing bolt, 30 burn-in device, 31 control unit, 32 chamber, 34 probing unit storage unit, 35 power supply, 36 probe holder, 37 upper plate, 38 middle plate, 39 lower plate, 40 alignment zone, 41 suction port reinforcement, 42 wire.

(Probing unit)
In order to achieve the above object, a probing unit according to the present invention is a probing unit used for burn-in screening at a semiconductor wafer level, and a DUT board that communicates signals with a semiconductor wafer on which a semiconductor chip is formed and a tester at the time of screening. A probe card that is aligned with the semiconductor wafer, a temperature control stage that applies a temperature load to the semiconductor wafer, a temperature control stage tray that holds and fixes the temperature control stage, and a plurality of first suction pads the adsorption of the card tray for temperature control stage 1 and the fixing device, and the second securing means to be attracted to the temperature control stage semiconductor wafer by a second suction pad includes a first suction pad probe card Semiconductor wafer side surface of the semiconductor wafer By installing the not facing portion, characterized by integrating the first and suction pad and a second suction pad by spatially separated.

With the above configuration, the probing unit integrates the DUT board, the probe card, the temperature control stage, and the temperature control stage tray together with the semiconductor wafer. That is, the probe card is fixed to the temperature control stage tray by the first suction pad of the first fixing device. Further, the semiconductor wafer is fixed to the temperature control stage by the second suction pad of the second fixing device. On the other hand, the temperature control stage tray holds and fixes the temperature control stage. Therefore, the whole component of the probing unit is reliably integrated by the first suction pad of the first fixing device and the second suction pad of the second fixing device , and the reliability as the unit can be obtained. In addition, the probing unit is installed in a portion where the first suction pad is on the surface of the probe card on the side of the semiconductor wafer and the semiconductor wafer does not face, so that the first suction pad and the second suction pad are in a space. Are separated and integrated. That is, the second suction pad is provided on the surface of the probe card on the side of the semiconductor wafer facing the semiconductor wafer, and the semiconductor wafer is fixed to the temperature control stage. Therefore, the first suction pad and the second suction pad are separated without spatially overlapping. Thereby, the influence of integration by the first suction pad does not affect the alignment between the probe card and the semiconductor wafer.

About this probing unit, the highly reliable integration using the suction pads of the first and second fixing devices may cause a deviation between the probe of the aligned probe card and the electrode of the semiconductor chip of the semiconductor wafer. Absent. Therefore, in the burn-in screening at the semiconductor wafer level, the probing unit that is aligned and integrated can be easily transported and the subsequent work process can be quickly processed, thereby improving the productivity.

In addition, the probing unit is integrated and applied with a temperature load, so that distortion due to the temperature load generated at each part of the probing unit is suppressed. That is, the semiconductor wafer is fixed to the temperature control stage by suction by the second suction pad, but the heat source loaded by the temperature control stage is surely conducted to the semiconductor wafer by this suction. That is, the temperature control stage can effectively take both the role of sucking the semiconductor wafer and the role of heating the semiconductor wafer. Further, the temperature control stage tray is sucked and fixed to the probe card by the first suction pad. However, since the temperature control stage is held, the heat of the semiconductor wafer heated by the temperature control stage is not released to the outside. It has the function of. Further, distortion due to temperature load such as a DUT board, a probe card, and a temperature control stage tray, which are other components of the probing unit, is reduced because it is not brought into direct contact with the semiconductor wafer. This eliminates the positional deviation between the wafer and the probe, ensures high accuracy with respect to thermal distortion, and enables highly reliable burn-in screening.

Also, the probing unit, first fixing device preferably comprises a first vacuum coupler La to vacuum suction in the first suction pad, also, the first suction pads, the semiconductor wafer side of the probe card It is preferable to install a plurality of locations on the surface where the semiconductor wafer does not face, and in particular, the first suction pads are placed on the four corners on the surface of the probe card on the semiconductor wafer side where the semiconductor wafer does not face. It is preferable. As a result, the integrated probing unit can more firmly fix the probe card with several suction pads and suppress distortion due to thermal expansion occurring at each part of the probe card. Further, the probing unit can be integrated by locally attracting the probe card without forming a sealed space inside the probe card.

Also, the probing unit, the second fixing device preferably comprises a second vacuum coupler La to vacuum suction to a second suction pad. As a result, the semiconductor wafer can be adsorbed freely to the temperature control stage, and the semiconductor substrate can be prevented from being warped and a highly reliable burn-in screening can be performed.

(Burn-in screening method)
In order to achieve the above object, a burn-in screening method according to the present invention includes a step of aligning a probe card and a semiconductor wafer by an alignment device, a probe card, a DUT board, a semiconductor wafer, a temperature control stage, and a temperature. A step of integrating the control stage tray as a roving unit, a step of separating the probing unit from the alignment device, a step of storing a plurality of probing units in the burn-in device, and a semiconductor wafer by a temperature control stage in the burn-in device direct given temperature load, and characterized in that it comprises the steps of: performing a burn-in screening by direct temperature control of the semiconductor wafer.

With the above configuration, in the probing unit, the probe card and the semiconductor wafer are aligned by the alignment device before the probe card, the temperature control stage, and the temperature control stage tray are integrated with the semiconductor wafer. That is, after the alignment in the alignment device, the probe card by the first suction pad is fixed by adsorption on the tray temperature control stage, the semiconductor wafer is fixed by adsorption to the temperature control stage with a second suction pad. Since the temperature control stage tray holds the temperature control stage, the entire component of the probing unit is held in a state where the probe card and the semiconductor wafer are aligned by the first suction pad and the second suction pad. It is surely integrated as it is. Thereby, high reliability as a probing unit can be obtained.

Further, each probing unit is integrated in a state in which the temperature control stage is directly built in the semiconductor wafer, and is stored in the burn-in apparatus. Thereby, when driving a semiconductor chip at high temperature, a temperature load can be directly applied to the semiconductor wafer individually by the temperature control stage corresponding to the individual wafer . The temperature control stage heater and a temperature sensor to heat the semiconductor wafer because it is not in the sealed space can be deployed closer to the semiconductor wafer, Ri sufficiently to allow a high thermal strain management accurate in providing temperature load , it is possible to ing to direct temperature control of the semiconductor wafer.

Claims (14)

In the probing unit used for burn-in screening at the semiconductor wafer level,
A semiconductor wafer on which semiconductor chips are formed;
A DUT board that communicates signals with the tester during screening;
A probe card aligned with a semiconductor wafer;
A temperature control stage that applies a temperature load to the semiconductor wafer; and
A temperature control stage tray for holding and fixing the temperature control stage; and
A first fixing device for fixing the probe card to the temperature control stage tray;
A second fixing device for fixing the semiconductor wafer to the temperature control stage;
A probing unit comprising:   2. The probing unit according to claim 1, wherein the first fixing device includes a plurality of first suction pads provided on the probe card for sucking the temperature control stage tray, and a first suction pad for vacuum suction to the suction pads. A probing unit comprising: a vacuum coupler.   3. The probing unit according to claim 2, wherein the first fixing device is installed at a plurality of locations on a surface of the probe card on the semiconductor wafer side where the semiconductor wafer does not face.   4. The probing unit according to claim 3, wherein the first fixing device is installed at four corners of the probe card on the side of the semiconductor wafer on which the semiconductor wafer does not face.   5. The probing unit according to claim 1, wherein the second fixing device includes a second suction pad that is provided on the temperature control stage and sucks the semiconductor wafer, and a second suction pad. And a second vacuum coupler for vacuum suction.   The probing unit according to any one of claims 1 to 5, wherein the first fixing device includes a first check valve connected to the first suction pad, and the second fixing device includes: A probing unit comprising a second check valve connected to the second suction pad.   The probing unit according to claim 1, wherein the first suction pad is also connected to the second check valve, and the first suction pad and the second suction pad are connected to each other. Probing unit characterized by vacuum suction.   The probing unit according to claim 1, wherein the temperature control stage is equipped with a heater for heating the semiconductor wafer and a temperature sensor for measuring the surface temperature of the semiconductor wafer. Probing unit.   The probing unit according to any one of claims 1 to 8, wherein the temperature control stage is built in such that a side surface and a bottom surface of the temperature control stage are covered with a tray for the temperature control stage. Probing unit.   The probing unit according to any one of claims 1 to 9, wherein a reinforcing plate provided with a plurality of stiffeners for suppressing deformation of the DUT board or the probe card is attached to the DUT board. Probing unit to do. In the burn-in screening system using the probing unit according to any one of claims 1 to 10,
An alignment device for aligning the probe card with the semiconductor wafer of the probing unit held on the alignment stage;
A burn-in device in which a tester is connected to a chamber having a unit holding portion for storing a probing unit;
The burn-in screening system is characterized in that a plurality of probing units separated from the alignment device are collectively subjected to burn-in screening. In a semiconductor wafer level burn-in screening method,
Aligning the probe card and the semiconductor wafer with an alignment device;
Integrating a probe card, a DUT board, a semiconductor wafer, a temperature control stage, and a temperature control stage tray as a probing unit;
Separating the probing unit from the alignment device;
Storing a plurality of probing units in a burn-in device;
Applying a temperature load to the semiconductor wafer by the temperature control stage;
A burn-in screening method comprising:   13. The burn-in screening method according to claim 12, wherein in the alignment step by the alignment device, the semiconductor wafer is fixed to the temperature control stage by the fixing device, the alignment is performed, and the probing unit is integrated. A burn-in screening method, wherein a probe card is fixed to a temperature control stage tray by a fixing device, and a semiconductor wafer is fixed to the temperature control stage and integrated as a probing unit.   14. The burn-in screening method according to claim 12, wherein the temperature control stage includes a heater that applies a temperature load to the semiconductor wafer in the step of integrating the probing unit, and a temperature sensor that measures the surface temperature of the semiconductor wafer. A burn-in screening method characterized by being already installed.

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