JP2018067603A - Prober and probe inspection method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a prober capable of stably performing a contact operation and a release operation by a vacuum suction system, and a probe inspection method.SOLUTION: A prober comprises: a wafer chuck 34 holding a wafer W; a probe card 32 including a plurality of probes 36 on a surface facing the wafer chuck 34; a head stage 30 holding the probe card 32; an annular seal member 48 forming an internal space between the wafer chuck 34 and the probe card 32; a Z-axis moving and rotating part 72 which freely detachably fixes the wafer chuck 34 and elevates the wafer chuck 34; a decompression device 44 which sucks and holds the wafer chuck 34 on the probe card 32 side by applying a negative pressure to an internal space; and shutter means 58 which is provided in the head stage 30 and can selectively switch the internal space between a communication state in which the internal space is communicating with an external space and a non-communication state in which the internal space is not communicating with the external space.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a prober and probe inspection method for inspecting electrical characteristics of a plurality of semiconductor devices (chips) formed on a semiconductor wafer, and in particular, a multistage prober and probe inspection having a plurality of measurement units. Regarding the method.

  The semiconductor manufacturing process has a large number of processes, and various inspections are performed in various manufacturing processes in order to guarantee quality and improve yield. For example, when a plurality of chips of a semiconductor device are formed on a semiconductor wafer, electrode pads of the semiconductor device of each chip are connected to a test head, a power supply and a test signal are supplied from the test head, and the semiconductor device outputs A wafer level inspection is performed in which a signal is measured by a test head to electrically inspect whether it operates normally.

  After wafer level inspection, the wafer is affixed to the frame and cut into individual chips with a dicer. For each chip that has been cut, only chips that have been confirmed to operate normally are packaged in the next assembly process, and defective chips are excluded from the assembly process. Further, the packaged final product is subjected to shipping inspection.

  The wafer level inspection is performed using a prober in which a probe is brought into contact with an electrode pad of each chip on the wafer. The probe is electrically connected to the terminals of the test head, and power and test signals are supplied from the test head to each chip through the probe, and whether the output signal from each chip is detected by the test head and is operating normally Measure.

  In the semiconductor manufacturing process, in order to reduce the manufacturing cost, the wafer is increased in size and further miniaturized (integrated), and the number of chips formed on one wafer becomes very large. ing. Along with this, the time required for inspecting a single wafer with a prober has also become longer, and an improvement in throughput is required. Therefore, in order to improve the throughput, multi-probing is performed in which a large number of probes are provided so that a plurality of chips can be inspected simultaneously. In recent years, the number of chips to be inspected at the same time has increased, and attempts have been made to inspect all chips on a wafer at the same time. For this reason, the tolerance of alignment for bringing the electrode pad and the probe into contact with each other is small, and it is required to improve the positional accuracy of the movement in the prober.

  On the other hand, as the simplest method for increasing the throughput, it is conceivable to increase the number of probers. However, when the number of probers is increased, there is a problem that the installation area of the prober in the production line also increases. Further, if the number of probers is increased, the cost of the apparatus will increase accordingly. Therefore, it is required to increase the throughput while suppressing an increase in installation area and an increase in apparatus cost.

  Under such a background, for example, Patent Document 1 proposes a multistage type prober including a plurality of measurement units. In this prober, an alignment apparatus that performs relative alignment between the wafer and the probe card is configured to be able to move between the measurement units. Thereby, an alignment apparatus can be shared by each measurement part, and space saving and cost reduction can be achieved.

  Further, the prober described in Patent Document 1 employs a vacuum suction method in which the wafer chuck is held on the probe card side. In this vacuum suction method, the internal space (sealed space) formed between the wafer chuck and the probe card is depressurized by the depressurizing means, and the wafer chuck is pulled toward the probe card side, so that the wafer is attached to each probe of the probe card. A contact operation for contacting the electrode pads of each chip is performed. Also, when the contact operation is performed, each probe of the probe card is brought into contact with the electrode pad of each chip of the wafer by the lifting mechanism of the alignment device before the operation of pulling the wafer chuck toward the probe card due to the decompression of the internal space. The contacting step is performed at least once. As a result, the oxide film formed on the electrode pad of each chip of the wafer can be removed, and the reliability of electrical connection can be improved.

  However, in the prober in which the contact operation as described above is performed, when the wafer chuck is raised by the lifting mechanism of the alignment apparatus, the internal space formed between the probe card and the wafer chuck is not in communication with the external space. (Sealed state), the air in the internal space is momentarily compressed as the wafer chuck rises, generating a strong reaction force. This reaction force causes the probe card and the wafer to be unintended. There is a possibility of contact. In this case, the probe card and the wafer may be damaged due to abnormal contact between the probe card and the wafer.

  Therefore, in the prober described in Patent Document 1, in order to solve the above problem, the wafer chuck has a configuration in which shutter means capable of selectively opening and closing a communication path communicating between the internal space and the external space is provided on the wafer chuck. It has been adopted. According to this configuration, when the wafer chuck is lifted by the lifting mechanism of the alignment device, the communication path is opened by the shutter means, so that the internal space is in communication with the external space (non-sealed state). It is possible to prevent the probe card and the wafer from being damaged due to abnormal contact between the probe card and the wafer.

  Further, in Patent Document 2, in a prober employing a vacuum suction method, in order to be able to clean the probe card without removing the probe card from the prober, communication between the internal space and the external space is established. A prober having a configuration in which a shutter means capable of opening and closing a passage (air passage) is provided in a wafer chuck has been proposed. According to this prober, as a cleaning operation of the probe card, the wafer for cleaning is sucked and held on the wafer chuck, the cleaning wafer is brought into contact with the probe of the probe card, and the wafer chuck is reciprocated up and down to move the probe card. When the operation for removing the deposits is performed, the communication path is opened by the shutter means so that the internal space is in communication with the external space (non-sealed state). The probe card is prevented from being damaged even when it is reciprocated.

JP, 2006-032110, A Japanese Patent Laid-Open No. 2006-152334

  By the way, in the prober described in patent document 1 or patent document 2, the internal space formed between the probe card and the wafer chuck communicates with the external space (atmosphere) (non-sealed state) and the external space. A configuration in which shutter means capable of selectively switching between a non-communication state (sealed state) that does not communicate is provided in the wafer chuck has the following problems.

  That is, when the component parts of the shutter means are attached to the wafer chuck, it becomes a heat radiating element, which has a problem of affecting the temperature distribution of the wafer chuck. In particular, when inspection is performed in an unusual environment such as high temperature or low temperature, the wafer chuck is inspected in a heated or cooled state, in which case the influence on the temperature distribution of the wafer chuck is significant. . Also, the flatness of the wafer chuck mounting surface (wafer holding surface) may change due to the influence on the temperature distribution of the wafer chuck, and the contact pressure between each probe of the probe card and the electrode pad of each chip of the wafer. Becomes non-uniform and causes a reduction in measurement accuracy of wafer level inspection.

  Further, in a prober employing a vacuum suction method, a contact operation for bringing the electrode pad of each chip of the wafer into contact with each probe of the probe card, or a wafer chuck integrated with the probe card by vacuum suction on the probe card side The weight balance of the wafer chuck becomes important when the release operation for releasing the wafer is performed. However, in the case where the shutter means is provided on the wafer chuck, the weight balance of the wafer chuck is broken by the components of the shutter means. This may cause the contact operation and release operation to become unstable.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a prober and a probe inspection method capable of stably performing a contact operation and a release operation by a vacuum suction method.

  To achieve the above object, a prober according to a first aspect of the present invention includes a wafer chuck for holding a wafer, a probe card having a plurality of probes on a surface facing the wafer chuck, and a head stage for holding the probe card. And an annular seal member that forms an internal space between the wafer chuck and the probe card, and a wafer chuck fixing portion that detachably fixes the wafer chuck, and the wafer chuck fixed to the wafer chuck fixing portion is moved up and down. Mechanical lifting and lowering means, negative pressure applying means for attracting and holding the wafer chuck on the probe card side by applying a negative pressure to the internal space, and a communication state provided in the head stage, the internal space communicating with the external space Shutter means capable of selectively switching between a non-communication state in which the internal space does not communicate with the external space. .

  In the prober according to the second aspect of the present invention, in the first aspect, the shutter means selectively switches the internal space between the communication state and the non-communication state by moving the open / close valve forward and backward by the air cylinder mechanism.

  The prober according to a third aspect of the present invention is the prober according to the first aspect or the second aspect, wherein when the wafer chuck is moved toward the probe card by the mechanical elevating means, the internal space is in a communicating state and the negative pressure applying means is provided. When a negative pressure is applied to the internal space, first shutter control means for controlling the operation of the shutter means is provided so that the internal space is not in communication.

  The prober according to a fourth aspect of the present invention is the prober according to any one of the first aspect to the third aspect, and a positive pressure applying means for releasing the wafer chuck from the probe card side by applying a positive pressure to the internal space. And a second shutter control means for controlling the operation of the shutter means so that the internal space becomes non-communication when the wafer chuck is released from the probe card side by the positive pressure applying means.

  In the probe inspection method according to the fifth aspect of the present invention, an internal space is formed between the wafer chuck and the probe card by moving the wafer chuck toward the probe card held on the head stage by the mechanical lifting means. A wafer chuck moving step, a negative pressure applying step for attracting and holding the wafer chuck to the probe card side by applying a negative pressure to the internal space, a communication state in which the internal space communicates with the external space and the internal When the wafer chuck moving process is performed using the shutter means that can be selectively switched between a non-communication state where the space does not communicate with the external space, the internal space becomes a non-communication state, and the negative pressure application process is performed. A first shutter control step for controlling the operation of the shutter means so that the internal space is in a communication state.

  In the probe inspection method according to a sixth aspect of the present invention, in the fifth aspect, a positive pressure applying step of releasing the wafer chuck from the probe card side by applying a positive pressure to the internal space and a positive pressure applying step are performed. In some cases, a second shutter control step of controlling the operation of the shutter means so that the internal space is in a non-communication state.

  According to the present invention, since the shutter means is provided on the head stage, it is possible to eliminate the influence of the components of the shutter means on the temperature distribution and weight balance of the wafer chuck, and the contact operation and release operation by the vacuum suction method can be stabilized. Can be done.

1 is an external view showing the overall configuration of a prober according to the first embodiment. The top view which showed the whole structure of the prober which concerns on 1st Embodiment Schematic showing the configuration of the measurement unit in the prober according to the first embodiment Schematic showing the configuration of the measurement unit in the measurement unit shown in FIG. Schematic plan view of the head stage as seen from the lower surface side as another configuration example of the first embodiment Diagram showing correspondence between positioning pin and V block 1 is a functional block diagram showing the configuration of a prober control device according to the first embodiment. A flowchart showing a contact operation in the prober according to the first embodiment. The figure for demonstrating the contact operation | movement in the prober which concerns on 1st Embodiment. The timing chart figure of the contact operation in the prober concerning a 1st embodiment. The flowchart which showed the release operation | movement in the prober which concerns on 1st Embodiment The figure for demonstrating the release operation | movement in the prober which concerns on 1st Embodiment The timing chart figure which showed release operation in the prober concerning a 1st embodiment Diagram showing the relationship between internal space pressure and wafer chuck release speed Schematic showing the configuration of the prober according to the second embodiment The figure for demonstrating the contact operation | movement in the prober which concerns on 2nd Embodiment. The figure for demonstrating the release operation | movement in the prober which concerns on 2nd Embodiment

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

(First embodiment)
1 and 2 are an external view and a plan view showing the overall configuration of the prober 10 according to the first embodiment.

  As shown in FIGS. 1 and 2, the prober 10 of this embodiment includes a loader unit 14 that supplies and recovers a wafer W (see FIG. 4) to be inspected, and a measurement unit 12 that is disposed adjacent to the loader unit 14. And. The measurement unit 12 has a plurality of measurement units 16. When the wafer W is supplied from the loader unit 14 to each measurement unit 16, the measurement unit 16 inspects the electrical characteristics of each chip of the wafer W. (Wafer level inspection) is performed. The wafer W inspected by each measurement unit 16 is collected by the loader unit 14. The prober 10 also includes an operation panel 22, a control device (see FIG. 6) described later, and the like.

  The loader unit 14 includes a load port 18 on which the wafer cassette 20 is placed, and a transfer unit 24 that transfers the wafer W between each measurement unit 16 of the measurement unit 12 and the wafer cassette 20. The transport unit 24 includes a transport unit drive mechanism (not shown), is configured to be movable in the X and Z directions, and is configured to be rotatable in the θ direction (around the Z direction). In addition, the transport unit 24 includes a transport arm 26 that is configured to be extendable back and forth by the transport unit driving mechanism. A suction pad (not shown) is provided on the upper surface of the transfer arm 26, and the transfer arm 26 holds the wafer W by vacuum-sucking the back surface of the wafer W with this suction pad. Thereby, the wafer W in the wafer cassette 20 is taken out by the transfer arm 26 of the transfer unit 24 and transferred to each measurement unit 16 of the measurement unit 12 while being held on the upper surface thereof. Further, the inspected wafer W that has been inspected is returned from each measuring unit 16 to the wafer cassette 20 through the reverse path.

  FIG. 3 is a schematic diagram showing the configuration of the measurement unit in the prober according to the embodiment of the present invention. FIG. 4 is a schematic diagram illustrating a configuration of a measurement unit in the measurement unit illustrated in FIG.

  As shown in FIG. 3, the measurement unit 12 has a stacked structure (multi-stage structure) in which a plurality of measurement units 16 are stacked in multiple stages, and each measurement unit 16 is 2 in the X direction and the Z direction. Dimensionally arranged. In the present embodiment, as an example, four measurement units 16 in the X direction are stacked in three stages in the Z direction.

  The measurement unit 12 includes a housing (not shown) having a lattice shape obtained by combining a plurality of frames in a lattice shape. This housing is formed by combining a plurality of frames extending in the X direction, the Y direction, and the Z direction in the form of a lattice, and each component of the measuring unit 16 is formed in each space formed by these frames. Is placed.

  Each measurement unit 16 has the same configuration, and includes a head stage 30, a probe card 32, and a wafer chuck 34, as shown in FIG. Each measurement unit 16 is provided with a test head (not shown). The test head is supported above the head stage 30 by a test head holding unit (not shown).

  The head stage 30 is supported by a frame member (not shown) constituting a part of the housing, and a probe card 32 is detachably mounted and fixed. The probe card 32 attached and fixed to the head stage 30 is provided so as to face the wafer holding surface 34 a of the wafer chuck 34. The probe card 32 is replaced according to the wafer W (device) to be inspected.

  The probe card 32 is provided with a plurality of probes 36 such as cantilevers and spring pins arranged corresponding to the positions of the electrode pads of each chip of the wafer W to be inspected. Each probe 36 is electrically connected to a terminal of a test head (not shown), and a power and a test signal are supplied from the test head to each chip via each probe 36 and an output signal from each chip is detected by the test head. And measure whether it works properly. Note that the connection configuration between the probe card 32 and the test head is not a main part of the present invention, and thus detailed description thereof is omitted.

  The probe 36 has a spring characteristic and contacts the electrode pad with a predetermined contact pressure by raising the contact point from the tip position of the probe 36. In addition, when the electrode 36 is in an overdriven state when the electrical inspection is performed, the probe 36 is inserted into the surface of the electrode pad and a needle mark is formed on the surface of the electrode pad. It is supposed to be. The overdrive means that the electrode pad and the probe 36 are in contact with each other in consideration of the inclination between the wafer W and the arrangement surface of the tip of the probe 36 and the variation in the tip position of the probe 36. The electrode pad, that is, the surface of the wafer W is raised by a distance α to a position higher than the tip position of 36. Further, the amount of movement that further raises the surface of the wafer W from the tip position (contact position) of the probe 36, that is, the distance α is referred to as an overdrive amount.

  The wafer chuck 34 fixes the wafer W by vacuum suction. The wafer chuck 34 has a wafer holding surface 34a on which a wafer W to be inspected is placed, and the wafer holding surface 34a is provided with a plurality of suction ports 40 (only one is shown in FIG. 4). The suction port 40 is connected to a suction device (vacuum source) 44 such as a vacuum pump via a suction path 42 formed inside the wafer chuck 34. A wafer suction electromagnetic valve 46 is provided in the suction path connecting the suction device 44 and the suction path 42. The wafer adsorption electromagnetic valve 46 is controlled by the wafer adsorption electromagnetic valve control unit 110 (see FIG. 7).

  Outside the wafer holding surface 34a of the wafer chuck 34, an elastic ring-shaped seal member (chuck seal rubber) 48 is provided so as to surround the wafer W held on the wafer holding surface 34a. When the wafer chuck 34 is moved (lifted) toward the probe card 32 by a Z-axis moving / rotating unit 72 described later, the ring-shaped seal member 48 comes into contact with the lower surface of the head stage 30. An internal space S (see FIG. 9) surrounded by the probe card 32 and the ring-shaped seal member 48 is formed. The ring-shaped seal member 48 is an example of an annular seal member of the present invention.

  The head stage 30 is provided with a pressure supply path 50 for selectively applying one of a negative pressure and a positive pressure to the internal space S formed between the probe card 32 and the wafer chuck 34. . One end of the pressure supply path 50 opens to the inner wall surface (the inner surface facing the internal space S) of the head stage 30, and the other end of the pressure supply path 50 is the outer wall surface (what is the internal space S) of the head stage 30. It opens to the outer surface that does not face). The other end of the pressure supply path 50 is connected to one end of a common pipe 60, and the common pipe 60 communicates with the internal space S through the pressure supply path 50. The other end of the common pipe 60 is connected to a pressure switching electromagnetic valve 62. In the present embodiment, the head stage 30 has a configuration in which only one pressure supply path 50 is provided. However, the present invention is not limited to this, and a plurality of pressure supply paths 50 may be provided (FIG. 5). reference).

  The pressure switching electromagnetic valve 62 includes three ports 62a, 62b, and 62c. The pressure switching electromagnetic valve control unit 114, which will be described later, is connected between the first port 62a and the third port 62c, and between the second port 62b and the third port. Control is performed so as to selectively communicate between the ports 62c.

  One end of a pressure reducing pipe 64 is connected to the first port 62a of the pressure switching electromagnetic valve 62, and the other end of the pressure reducing pipe 64 is connected to a suction device 44 (vacuum electropneumatic regulator) 54 via a pressure reducing regulator (vacuum electropneumatic regulator). Connected to a vacuum pump). One end of a pressurizing pipe 66 is connected to the second port 62 b, and the other end of the pressurizing pipe 66 is connected to a pressurizing device (pressurizing pump) 45 via a pressurizing regulator 68. The other end of the common pipe 60 described above is connected to the third port 62c.

  The suction device 44 depressurizes the internal space S by discharging the air in the internal space S through the decompression pipe 64 and the common pipe 60, and makes the negative pressure that is lower than the atmospheric pressure. it can. The pressure reducing regulator 54 can be set to any pressure (negative pressure) from atmospheric pressure to, for example, −100 kPa (gauge pressure). When the pressure reducing regulator 54 is used to lower the degree of vacuum (to reduce the negative pressure) The air flows into the internal space S from the air inlet 54a until a predetermined pressure is reached. The suction device 44 and the pressure reducing regulator 54 are examples of the negative pressure applying means of the present invention.

  The pressurizing device 45 generates compressed air and supplies the compressed air to the internal space S via the pressurizing pipe 66 and the common pipe 60, thereby pressurizing the internal space S to be higher than the atmospheric pressure. The pressure can be positive. The pressurizing regulator 68 can be set to an arbitrary pressure (positive pressure) from atmospheric pressure to 1 MPa. When the pressurizing regulator 68 is used to depressurize from high pressure to low pressure within a range of atmospheric pressure or higher, a predetermined pressure is set. The air in the internal space S is exhausted from the exhaust port 68a of the pressurizing regulator 68 until The pressurizing device 45 and the pressurizing regulator 68 are examples of the positive pressure applying unit of the present invention.

  The head stage 30 is provided with a communication path 56 that communicates between the internal space S and the external space (atmosphere). One end of the communication path 56 opens to the inner wall surface (the inner surface facing the internal space S) of the head stage 30, and the other end of the communication path 56 does not face the outer wall surface (the internal space S) of the head stage 30. Open to the outer surface.

  Further, the head stage 30 can be selectively switched between a communication state (non-sealed state) in which the internal space S communicates with the external space and a non-communication state (sealed state) in which the internal space S does not communicate with the external space. Shutter means 58 is provided.

  The shutter unit 58 includes an air cylinder mechanism 300 and an opening / closing valve 302. The shutter mechanism 58 is configured to open and close the opening / closing valve 302 between a closed position where the communication path 56 is closed and an open position where the communication path 56 is opened. The communication path 56 is opened and closed by moving forward and backward. That is, the internal space S is selectively switched between the non-communication state and the communication state as the shutter unit 58 moves forward and backward by the air cylinder mechanism 300.

  The air cylinder mechanism 300 moves the on-off valve 302 in the horizontal direction, and includes a cylinder 304, a piston 306 housed in the cylinder 304, and a piston rod 308 fixed to the piston 306. ing. The cylinder 304 is connected to the air cylinder driving device 310 through a gas supply path, and the piston 306 and the piston rod 308 are moved forward and backward by the gas supplied from the air cylinder driving device 310. The on-off valve 302 is attached to the tip of the piston rod 308, and between an open position where the communication path 56 is opened and a blocking position where the communication path 56 is blocked according to the forward and backward movement of the piston 306 and the piston rod 308. It is configured to move forward and backward. When the on-off valve 302 moves to the open position, the communication path 56 is opened, and the internal space S is in communication with the external space via the communication path 56. On the other hand, when the on-off valve 302 is moved to the shut-off position, the communication path 56 is shut off, and the internal space S is not communicated with the external space. The shutter unit 58 (air cylinder mechanism 300) is controlled by a shutter control unit 116 (see FIG. 7) described later.

  As described above, according to the present embodiment, since the shutter unit 58 is provided on the head stage 30, the wafer chuck 34 is not provided with the components of the shutter unit 58 serving as a heat dissipation element, and the temperature distribution of the wafer chuck 34. Can be eliminated. Further, since the influence on the temperature distribution of the wafer chuck 34 is eliminated, the flatness of the wafer holding surface 34a of the wafer chuck 34 is improved. Thereby, the parallelism between the wafer W and the probe card 32 can be further increased, and the wafer level inspection can be performed with high accuracy. In addition, since the number of components mounted on the wafer chuck 34 can be reduced, it becomes easy to balance the weight of the wafer chuck 34. As a result, it is possible to stably perform the contact operation and the release operation by the vacuum suction method without breaking the weight balance of the wafer chuck 34.

  In the present embodiment, the head stage 30 has a configuration in which one communication path 56 and one shutter unit 58 are provided. However, the present invention is not limited to this. For example, as illustrated in FIG. A plurality of shutter means 58 may be provided. FIG. 5 is a schematic plan view of the head stage 30 as viewed from the lower surface side (wafer chuck 34 side) as another configuration example of the present embodiment (first embodiment). A configuration is shown in which four shutter means 58 are provided. As described above, according to the configuration in which the head stage 30 includes the plurality of communication paths 56 and the shutter means 58, the flow rate of the gas flowing in and out between the internal space S and the external space when the shutter means 58 is opened is ensured. can do. Accordingly, even when the cross-sectional area (effective cross-sectional area) of the communication path 56 is small, operations (such as the Z-axis raising process and the cleaning process) performed with the shutter means 58 open can be stably performed. It becomes possible.

  Inside the wafer chuck 34, a heating / cooling source is provided so that the electrical characteristics of the wafer W to be inspected can be inspected in a high temperature state (for example, 150 ° C. at maximum) or a low temperature state (for example, −40 ° C.) A heating / cooling mechanism (not shown) is provided. As the heating / cooling mechanism, a known appropriate heater / cooler can be adopted. For example, a heating / cooling mechanism having a double layer structure of a heating layer of a surface heater and a cooling layer provided with a passage for cooling fluid, Various devices such as a heating / cooling device having a single layer structure in which a cooling pipe around which a heater is wound are embedded in a conductor are conceivable. Further, instead of electrical heating, a thermal fluid may be circulated, and a Peltier element may be used.

  The wafer chuck 34 is detachably supported and fixed to an alignment device 70 described later. The alignment device 70 moves the wafer chuck 34 in the X, Y, Z, and θ directions to perform relative alignment between the wafer W held on the wafer chuck 34 and the probe card 32.

  The alignment device 70 detachably supports and fixes the wafer chuck 34 to move the wafer chuck 34 in the Z-axis direction and to rotate in the θ direction about the Z-axis, and a Z-axis movement. An X-axis moving table 74 that supports the rotating unit 72 and moves in the X-axis direction and a Y-axis moving table 76 that supports the X-axis moving table 74 and moves in the Y-axis direction are provided.

  Each of the Z-axis movement / rotation unit 72, the X-axis movement table 74, and the Y-axis movement table 76 is configured such that the wafer chuck 34 can be moved or rotated in a predetermined direction by a mechanical drive mechanism including at least a motor. The As the mechanical drive mechanism, for example, a ball screw drive mechanism in which a servo motor and a ball screw are combined is used. Moreover, not only a ball screw drive mechanism but a linear motor drive mechanism or a belt drive mechanism may be used. The Z-axis moving / rotating unit 72, the X-axis moving table 74, and the Y-axis moving table 76 are configured such that the moving distance, moving direction, moving speed, and acceleration of the wafer chuck 34 can be changed by each control unit described later. ing. Specifically, the present embodiment has the following configuration.

  The Z-axis moving / rotating unit 72 is an example of a mechanical lifting / lowering unit of the present invention, and a Z-axis driving motor 122 (for example, a stepping motor, a servo motor, a linear motor, etc.) for moving the wafer chuck 34 in the Z-axis direction. (See FIG. 7) and a Z-axis encoder (for example, a rotary encoder or a linear scale) (not shown) for detecting the movement distance of the wafer chuck 34 in the Z-axis direction. The Z-axis drive motor 122 is controlled based on a motor control signal from a Z-axis movement control unit 106 (see FIG. 7) described later, and drives the wafer chuck 34 to move to a target position at a desired moving speed or acceleration. . The Z-axis encoder outputs an encoder signal in accordance with the movement of the wafer chuck 34.

  The Z-axis moving / rotating unit 72 includes a rotation driving motor 124 (for example, a stepping motor, a servo motor, a linear motor, etc.) (see FIG. 7) for rotating the wafer chuck 34 in the θ direction, A rotation encoder (for example, a rotary encoder or the like) (not shown) for detecting a rotation angle in the θ direction is provided. The rotation drive motor 124 is controlled based on a motor control signal from a later-described θ rotation control unit 108 (see FIG. 7), and drives the wafer chuck 34 to move to a target position at a desired rotation speed or acceleration. The rotary encoder outputs an encoder signal according to the rotation of the wafer chuck 34.

  The X-axis moving table 74 includes an X-axis drive motor 118 (for example, a stepping motor, servo motor, linear motor, etc.) (see FIG. 7) for moving the wafer chuck 34 in the X-axis direction, and the X-axis of the wafer chuck 34. An X-axis encoder (for example, a rotary encoder, a linear scale, etc.) (not shown) for detecting the movement distance in the direction is provided. The X-axis drive motor 118 is controlled based on a motor control signal from an X-axis movement control unit 102 (see FIG. 7) described later, and drives the wafer chuck 34 to move to a target position at a desired moving speed or acceleration. . The X-axis encoder outputs an encoder signal according to the movement of the wafer chuck 34.

  The Y-axis moving table 76 includes a Y-axis drive motor 120 (for example, a stepping motor, servo motor, linear motor, etc.) (see FIG. 7) for moving the wafer chuck 34 in the Y-axis direction, and the Y-axis of the wafer chuck 34. A Y-axis encoder (for example, a rotary encoder or a linear scale) (not shown) for detecting a movement distance in the direction is provided. The Y-axis drive motor 120 is controlled based on a motor control signal from a Y-axis movement control unit 104 (see FIG. 7) described later, and drives the wafer chuck 34 to move to a target position at a desired movement speed or acceleration. . Further, the Y-axis encoder outputs an encoder signal in accordance with the movement of the wafer chuck 34.

  The alignment device 70 is provided for each stage (see FIG. 3), and is configured to be movable between a plurality of measurement units 16 arranged in each stage by an alignment device driving mechanism (not shown). . That is, the alignment device 70 is shared among a plurality of (four in this example) measurement units 16 arranged on the same stage, and moves between the plurality of measurement units 16 arranged on the same stage. To do. The alignment device 70 moved to each measuring unit 16 is fixed in a state where it is positioned at a predetermined position by a positioning and fixing device (not shown), and the wafer chuck 34 is moved in the X, Y, Z, and θ directions and held on the wafer chuck 34. The relative alignment between the wafer W and the probe card 32 is performed. Although not shown, the alignment apparatus 70 includes a needle position detection camera for detecting the relative positional relationship between the electrode pad of each chip of the wafer W held by the wafer chuck 34 and the probe 36. And a wafer alignment camera. The alignment device drive mechanism is configured by a mechanical drive mechanism such as a ball screw drive mechanism, a linear motor drive mechanism, or a belt drive mechanism.

  On the wafer chuck support surface 72a of the Z-axis movement / rotation unit 72 constituting the upper surface of the alignment device 70, an annular ring-shaped seal member (Z-axis seal rubber) 78 formed in an annular shape along the outer periphery is provided. A suction port 80 is provided inside the ring-shaped seal member 78 on the wafer chuck support surface 72a. The suction port 80 is connected to the suction device 44 via a suction path 82 formed inside the wafer chuck 34. In the suction path connecting the suction device 44 and the suction path 82, a chuck fixing electromagnetic valve 84 and a throttle valve 86 are provided in this order from the suction device 44 side. The chuck fixing electromagnetic valve 84 is controlled by a chuck fixing electromagnetic valve control unit 112 (see FIG. 7) described later. The wafer chuck support surface 72a of the Z-axis moving / rotating unit 72 is an example of the wafer chuck fixing unit of the present invention. The suction port 80 provided in the wafer chuck support surface 72a is an example of a component of the wafer chuck fixing portion.

  Positioning pins 88 are provided outside the ring-shaped seal member 78 on the wafer chuck support surface 72a of the Z-axis moving / rotating unit 72 so that the relative positional relationship of the wafer chuck 34 with respect to the alignment device 70 is always constant. ing. As shown in FIG. 6, the positioning pins 88 are provided at three locations at equal intervals along the circumferential direction centered on the central axis of the wafer chuck 34 (only two are shown in FIG. 4). On the lower surface of the wafer chuck 34, V blocks 90 as positioning members are provided at positions corresponding to the positioning pins 88, respectively. When the wafer chuck 34 is sucked and fixed by vacuum suction, the corresponding positioning pins 88 are engaged in the V grooves of the respective V blocks 90 so that the wafer chuck 34 can be moved in the horizontal direction (X direction and Y direction). ) Is restrained, and the relative positioning between the alignment device 70 and the wafer chuck 34 is performed. FIG. 6 is a diagram showing a correspondence relationship between the positioning pins 88 and the V block 90. In FIG. 6, the illustration of components other than the positioning pins 88 and the V block 90 is omitted to simplify the drawing.

  In this embodiment, the alignment apparatus 70 fixes the wafer chuck 34 by vacuum suction. However, as long as the wafer chuck 34 can be fixed, fixing means other than vacuum suction may be used, for example, mechanical means. It may be fixed.

  FIG. 7 is a functional block diagram showing the configuration of the prober control device according to the embodiment of the present invention.

  As shown in FIG. 7, the control device of the prober 10 of the present embodiment includes an overall control unit 100, an X-axis movement control unit 102, a Y-axis movement control unit 104, a Z-axis movement control unit 106, a θ rotation control unit 108, A wafer adsorption electromagnetic valve control unit 110, a chuck fixing electromagnetic valve control unit 112, a pressure switching electromagnetic valve control unit 114, a pressure control unit 115, a shutter control unit 116, and the like are provided.

  The overall control unit 100 comprehensively controls each part constituting the prober 10. Specifically, the overall control unit 100 controls a contact operation for attracting and holding the wafer chuck 34 to the probe card 32 side and a release operation for releasing (separating) the wafer chuck 34 from the probe card 32 side. In addition to these operations, the overall control unit 100 performs movement control for moving the alignment apparatus 70 between the measurement units 16, control of wafer level inspection operations by the test head, and the like. The control other than the contact operation and the release operation is not a characteristic part of the present invention, and thus detailed description thereof is omitted.

  The X-axis movement control unit 102 controls the drive of the X-axis drive motor 118 provided on the X-axis movement table 74 to move the X-axis movement table 74 in the X-axis direction, thereby moving the wafer chuck 34 in the X-axis direction. Move to. The Y-axis movement control unit 104 moves the Y-axis movement table 76 in the Y-axis direction by controlling the drive of the Y-axis drive motor 120 provided on the Y-axis movement table 76, thereby moving the wafer chuck 34 in the Y-axis direction. Move to. The Z-axis movement control unit 106 moves the wafer chuck 34 in the Z-axis direction by moving the Z-axis movement / rotation unit 72 up and down by controlling the driving of the Z-axis drive motor 122 provided in the Z-axis movement / rotation unit 72. Move to. The θ rotation control unit 108 controls the drive of the rotation drive motor 124 provided in the Z axis movement / rotation unit 72 to rotate the Z axis movement / rotation unit 72 in the θ direction, thereby moving the wafer chuck 34 in the θ direction. Rotate to

  The wafer chucking electromagnetic valve controller 110 controls the ON / OFF (open / close) of the wafer chucking electromagnetic valve 46 to adjust the suction pressure by the suction port 40 and to fix / fix the wafer W to the wafer chuck 34. Selectively switch non-fixed.

  The chuck fixing electromagnetic valve control unit 112 controls ON / OFF (open / close) of the chuck fixing electromagnetic valve 84 to adjust the suction pressure by the suction port 80, and to adjust the wafer to the Z-axis moving / rotating unit 72. The chuck 34 is selectively switched between fixed and non-fixed.

  The pressure switching electromagnetic valve control unit 114 selectively switches between the first port 62a and the third port 62c and between the second port 62b and the third port 62c by controlling the port switching of the pressure switching electromagnetic valve 62. Communicate with. Thereby, the connection destination of the common pipe 60 is selectively switched to the negative pressure side (suction device 44 side) or the positive pressure side (pressure device 45 side).

  In the state where the pressure switching electromagnetic valve control unit 114 switches the pressure switching electromagnetic valve 62 to the negative pressure side (that is, the state where the first port 62a and the third port 62c are communicated), By controlling the operation of the decompression regulator 54, the internal pressure of the internal space S is set to a negative pressure lower than the atmospheric pressure.

  The pressure control unit 115 is a state in which the pressure switching electromagnetic valve 62 is switched to the positive pressure side (that is, the state in which the second port 62b and the third port 62c are communicated) by the pressure switching electromagnetic valve control unit 114. The internal pressure of the internal space S is set to a positive pressure higher than the atmospheric pressure by controlling the operation of the pressurizing regulator 68. At this time, the pressure switching solenoid valve controller 114 causes the wafer chuck 34 to be released from the probe card 32 side at a sufficiently high release speed as compared with the case where the internal space S is vacuum-ruptured by opening to the atmosphere or by minute pressurization. In addition, the pressure in the internal space is controlled so that the pressure (positive pressure) according to the target release speed (target release speed) is obtained.

  The shutter control unit 116 selectively opens / closes the communication path 56 that communicates between the internal space S and the external space by controlling the opening / closing of the shutter unit 58. Specifically, the shutter control unit 116 controls the operation of the air cylinder mechanism 300 via the air cylinder driving device 310 to move the open / close valve 302 forward and backward, thereby causing the internal space S to communicate with the communication state and non-communication. Selectively switch between states. The shutter control unit 116 is an example of a first shutter control unit and a second shutter control unit of the present invention.

  Next, a contact operation (an example of a probe inspection method) in the prober 10 according to the first embodiment will be described with reference to FIGS. This operation is performed under the control of the overall control unit 100.

  FIG. 8 is a flowchart showing a contact operation in the prober according to the first embodiment. FIG. 9 is a diagram for explaining a contact operation in the prober according to the first embodiment. FIG. 10 is a timing chart showing a contact operation in the prober according to the first embodiment. Note that the time width of the timing chart shown in FIG. 10 is expressed to simplify the drawing and is different from the actual time. Further, “Z-axis height” in FIG. 10 indicates the position (height position) in the Z-axis direction of the wafer chuck support surface 72 a of the Z-axis moving / rotating unit 72. Further, “chuck height” in FIG. 10 is the height position of the wafer chuck 34 (specifically, the wafer holding surface) when the tip position (contact position) of the probe 36 is the reference position (0 point position). 34a shows the position in the Z-axis direction).

(Pre-operation)
A preliminary operation of the contact operation will be described.

  First, as a pre-operation of the contact operation, after the alignment device 70 is moved to the measurement unit 16 to be inspected, the wafer chuck 34 is transferred to the alignment device 70 in a state where the alignment device 70 is positioned and fixed by a positioning and fixing device (not shown). . Note that the transfer operation of the wafer chuck 34 before the start of the contact operation is not a main part of the present invention, and thus detailed description thereof is omitted.

(Step S10: Wafer chuck fixing process)
After the wafer chuck 34 is transferred to the alignment device 70, as shown in FIG. 9A, the chuck fixing electromagnetic valve control unit 112 turns on the chuck fixing electromagnetic valve 84 (open state), and sets the Z axis The wafer chuck 34 is sucked and fixed to the wafer chuck support surface 72a (see FIG. 4) of the moving / rotating unit 72 (time T1 in FIG. 10). At this time, the positioning pin 88 of the Z-axis moving / rotating unit 72 is engaged with the V groove of the V block 90 of the wafer chuck 34, whereby the alignment between the alignment device 70 and the wafer chuck 34 is performed.

  Thereafter, when the wafer W is supplied (loaded) to the wafer chuck 34 supported and fixed to the alignment device 70, the wafer attracting electromagnetic valve controller 110 turns on the wafer attracting electromagnetic valve 46 (open state), and the wafer is attracted. The wafer W is sucked and fixed to the holding surface 34a (see FIG. 4) (time T2 in FIG. 10).

(Step S12: alignment step)
Next, the X-axis movement control unit 102, the Y-axis movement control unit 104, and the θ rotation control unit 108 are controlled by the overall control unit 100 based on the results captured by the needle position detection camera and the wafer alignment camera. By controlling the X-axis drive motor 118, the Y-axis drive motor 120, and the rotation drive motor 124, the wafer W held on the wafer chuck 34 and the probe card 32 are relatively aligned.

(Step S14: shutter opening process)
Next, as shown in FIG. 9A, the shutter control unit 116 opens the shutter means 58 and opens the communication path 56 (time T3 in FIG. 10). That is, the shutter control unit 116 controls the air cylinder driving device 310 to move the on-off valve 302 to the open position by driving the air cylinder mechanism 300. As a result, the internal space S is in a communication state (non-sealed state) in communication with the external space via the communication path 56. The shutter opening process is an example of the first shutter control process of the present invention.

  The shutter opening process may be performed at least before the ring-shaped seal member 48 comes into contact with the head stage 30 (see FIG. 9B) in the Z-axis raising process described later. For example, the shutter opening process may be performed between the wafer chuck fixing process and the alignment process, or may be performed before the wafer chuck fixing process. Further, the shutter opening process may be performed simultaneously with the wafer chuck fixing process or the alignment process.

(Step S16: Z-axis raising process)
Next, as shown in FIGS. 9B and 9C, the Z-axis movement control unit 106 controls the Z-axis drive motor 122 to raise the Z-axis movement / rotation unit 72, thereby increasing the wafer chuck. 34 is moved toward the probe card 32 (time T4 to T5 in FIG. 10). Specifically, the wafer chuck 34 is raised so that the wafer chuck 34 moves from a predetermined height position (standby position) to a height position where the ring-shaped seal member 48 contacts the head stage 30 (FIG. 9B Further, the wafer chuck 34 is raised to at least a position higher than the tip position (contact position) of the probe 36 (see FIG. 9C). Thereby, each probe 36 of the probe card 32 contacts the electrode pad of each chip of the wafer W in the overdrive state.

  In the Z-axis raising step, the height at which the wafer chuck 34 is raised by the Z-axis moving / rotating unit 72 is from the tip position (contact position) of the probe 36 to the appropriate overdrive amount (proper OD position) of the probe card 32. The height is preferably 30 to 70% (more preferably 40 to 60%). The Z-axis raising process is an example of the wafer chuck moving process of the present invention.

(Step S18: Shutter closing process)
Next, as shown in FIG. 9D, the shutter control unit 116 closes the shutter means 58 and blocks the communication path 56 (time T6 in FIG. 10). That is, the shutter control unit 116 controls the air cylinder driving device 310 to move the on-off valve 302 to the closed position by driving the air cylinder mechanism 300. As a result, the internal space S formed between the wafer chuck 34 and the probe card 32 by the ring-shaped seal member 48 is in a non-communication state (sealed state) that does not communicate with the external space. The shutter closing process is an example of the first shutter control process of the present invention.

(Step S20: Depressurization step)
Next, the pressure switching solenoid valve control unit 114 controls the port switching of the pressure switching solenoid valve 62 so that the first port 62a and the third port 62c communicate with each other. Subsequently, as shown in FIG. 9D, the pressure control unit 115 controls the operation of the decompression regulator 54 to start decompressing the internal space S (time T7 in FIG. 10). At this time, when the wafer chuck 34 is released from the suction port 80 (see FIG. 4) of the Z-axis movement / rotation unit 72, the pressure control unit 115 performs the appropriate overdrive amount (appropriate OD position) of the probe card 32. The target pressure is set so that the wafer chuck 34 rises until the internal pressure of the internal space S is adjusted to be the target pressure. The target pressure in the internal space S may be obtained empirically or experimentally, or may be obtained from a design value. For example, in order to determine the target pressure, the reaction force received from the probe 36 when the wafer chuck 34 is raised to the appropriate overdrive amount of the probe card 32 (reaction force when the probe 36 is crushed), and the probe card 32 Can be obtained from the total number of probes 36 provided in the. If the total needle pressure of the probe card 32 (the total pressure received from the probe 36) is known, the necessary negative pressure is divided by the area of the surface (suction surface) surrounded by the ring-shaped seal member 48, so that the required negative pressure is the target of the internal space S. Calculated as pressure. However, it is necessary to set the target pressure in the internal space S in consideration of the reaction force due to crushing the weight of the wafer chuck 34 and the ring-shaped seal member 48. In addition, a pressure reduction process is an example of the negative pressure provision process of this invention.

(Step S22: Judgment process)
Next, the pressure control unit 115 determines whether or not the internal pressure (pressure value P1) of the internal space S has reached the set pressure (pressure value P2) by the pressure reducing regulator 54. This determination is repeated until the internal pressure (pressure value P1) reaches the set pressure (pressure value P2). When the set pressure (pressure value P2) is reached, the process proceeds to the next step S24. Thereby, when the internal pressure of the internal space S is stabilized at the set pressure, a wafer chuck fixing releasing step (step S24) described later is performed. The internal pressure of the internal space S may be detected directly by, for example, a pressure sensor provided in the wafer chuck 34 or the head stage 30, or may be a pressure built in or connected to the decompression regulator 54. You may detect with a sensor.

(Step S24: Wafer chuck fixing release process)
Next, the chuck fixing electromagnetic valve control unit 112 turns OFF the chuck fixing electromagnetic valve 84 (closed state), and fixes the wafer chuck 34 by the suction port 80 (see FIG. 4) of the Z-axis moving / rotating unit 72. Release (time T9 in FIG. 10).

  At this time, since the internal pressure of the internal space S is adjusted to the set pressure by the pressure reducing regulator 54, when the fixation of the wafer chuck 34 by the Z-axis movement / rotation unit 72 is released, the wafer chuck 34 moves in the Z-axis direction. -It leaves | separates from the rotation part 72 and is drawn near to the probe card 32 side (T9-T10 of FIG. 10). As a result, the electrode pads of each chip of the wafer W to be inspected and each of the probe cards 32 are not affected by the inclination between the wafer W and the arrangement surface of the tips of the probes 36 and the variations in the tip positions of the probes 36. The probe 36 is reliably contacted with a predetermined contact pressure.

  As described above, in this embodiment, since the fixation of the wafer chuck 34 is released after the pressure reduction of the internal space S is started, the wafer chuck 34 is moved to which side at the moment of switching between these processes. Further, the unfixed state (free state) is eliminated, and the delivery operation of the wafer chuck 34 can be performed stably.

  Further, in the present embodiment, since the throttle valve 86 is provided in the suction path connecting the suction path 82 of the Z-axis moving / rotating unit 72 and the chuck fixing electromagnetic valve 84, the internal space S is decompressed. Even if the fixation of the wafer chuck 34 is released after starting, the negative pressure on the lower side of the wafer chuck 34 (Z-axis moving / rotating unit 72 side) is not suddenly lost. Therefore, in a state where the wafer chuck 34 is pulled from both the upper and lower sides (that is, both sides of the Z-axis movement / rotation unit 72 and the probe card 32), the restraint from the lower side suddenly (that is, the Z-axis movement / rotation unit 72). Therefore, the abnormal vibration and abnormal contact caused by the rapid movement of the wafer chuck 34 can be reduced. Accordingly, since the wafer chuck 34 can be prevented from being suddenly detached from the Z-axis moving / rotating unit 72 when the wafer chuck fixing release process is performed, the delivery operation of the wafer chuck 34 is performed more stably. It becomes possible.

  In the present embodiment, as an example, a configuration in which the throttle valve 86 is provided in the suction path connecting the suction path 82 of the Z-axis moving / rotating unit 72 and the chuck fixing electromagnetic valve 84 is shown. A throttle valve 86 may be provided in a path connecting the suction port 80 of the shaft moving / rotating unit 72 and the suction device 44. For example, the throttle valve 86 is provided in the suction path 82 of the Z-axis moving / rotating unit 72. May be provided.

(Step S26: Z-axis lowering step)
Next, as shown in FIG. 9E, the Z-axis movement control unit 106 controls the Z-axis drive motor 122 to lower the Z-axis movement / rotation unit 72 to a predetermined height position (standby position). (Time T11 to T12 in FIG. 10).

  As described above, when the wafer chuck 34 is transferred from the alignment device 70 (Z-axis movement / rotation unit 72) to the head stage 30 (probe card 32 side), each probe 36 of the probe card 32 has a uniform contact pressure. Thus, the wafer W comes into contact with the electrode pads of each chip, and the wafer level inspection can be started. Thereafter, a power supply and a test signal are supplied from the test head to each chip of the wafer W via each probe 36, and an electrical operation inspection is performed by detecting a signal output from each chip.

  After the wafer chuck 34 is transferred from the alignment device 70 (Z-axis movement / rotation unit 72) to the head stage 30 (probe card 32 side), the alignment device 70 moves to another measurement unit 16 and measures the measurement. In the part 16, a contact operation is performed in the same procedure, and wafer level inspection is sequentially performed.

  Thus, the contact operation in the prober 10 according to the first embodiment is completed.

  Next, a release operation (an example of a probe inspection method) performed after the wafer level inspection is completed in the prober 10 of the first embodiment will be described with reference to FIGS.

  FIG. 11 is a flowchart showing a release operation in the prober 10 of the first embodiment. FIG. 12 is a diagram for explaining a release operation in the prober 10 of the first embodiment. FIG. 13 is a timing chart showing a release operation in the prober 10 of the first embodiment.

(Step S30: Z-axis raising process)
First, the Z-axis movement control unit 106 can control the Z-axis drive motor 122 to receive the wafer chuck 34 from the predetermined height position of the Z-axis movement / rotation unit 72 as shown in FIG. It is raised to a certain height position (chuck receiving height) (time T1 to T2 in FIG. 13).

  Further, when the Z-axis raising process is performed or before and after the Z-axis raising process, the pressure control unit 115 controls the operation of the pressure reducing regulator 54 to lower the degree of vacuum in the internal space S (reducing the negative pressure). Then, the wafer chuck 34 is lowered to a predetermined height position (release position) (time T1 to T3 in FIG. 13). As a result, the distance between the wafer chuck 34 and the Z-axis moving / rotating unit 72 when a chuck release process described later is performed can be shortened, and the delivery of the wafer chuck 34 can be stabilized.

  The positional relationship between the wafer chuck 34 and the Z-axis moving / rotating unit 72 when the Z-axis moving / rotating unit 72 is raised to the chuck receiving height and the wafer chuck 34 is moved to the release position is shown in FIG. As shown in A), it is preferable that the positioning pin 88 is not fitted into the V block (positioning groove) 90 and the ring-shaped seal member 78 is in contact with the lower surface of the wafer chuck 34. The ring-shaped seal member 78 is brought into contact with the lower surface of the wafer chuck 34 before the chuck release process described later is performed, so that the impact when the wafer chuck 34 is released is effectively absorbed by the ring-shaped seal member 78. It becomes possible.

(Step S32: chuck release process)
Next, the pressure switching solenoid valve control unit 114 controls the port switching of the pressure switching solenoid valve 62 so that the second port 62b and the third port 62c communicate with each other. Subsequently, the pressure control unit 115 controls the operation of the pressurizing regulator 68 so as to release the wafer chuck 34 from the probe card 32 side at a preset target release speed based on the target release speed. The positive pressure applied to S is controlled (time T4 in FIG. 13).

  In this embodiment, in order not to damage the wafer W and the probe 36, it is necessary to shorten the time during which the wafer chuck 34 is in an unstable state as much as possible. For this purpose, the release speed of the wafer chuck 34 is set to the internal space S. It is desirable that it be sufficiently fast as compared with the case where the vacuum is broken by opening to the atmosphere or by minute pressure. For this reason, the target release speed varies depending on the type of the probe card 32, the probe 36, and the wafer W, but it has been confirmed by experiments that it is preferable to set the target release speed to 10 mm / s or more as an example.

  Further, there is a certain correlation (proportional relationship) between the release speed of the wafer chuck 34 and the pressure in the internal space S, for example, as shown in FIG. 14, and these relations (release speed-pressure characteristics). Can be obtained by experiments in advance. Therefore, the pressure control unit 115 can obtain the pressure applied to the internal space S from the target release speed by storing the release speed-pressure characteristics obtained in advance in a storage unit (not shown). it can. Note that the release speed-pressure characteristics vary depending on the individual probers, and it is preferable to obtain them for each prober.

  Thereby, the internal space S is pressurized to a pressure (positive pressure) corresponding to the target release speed, for example, 0.2 to 0.6 MPa. As a result, the wafer chuck 34 is released from the probe card 32 side at a sufficiently high release speed as compared with the case where the internal space S is broken by vacuum by opening to the atmosphere or by minute pressure. The wafer chuck 34 released from the probe card 32 side is supported by the Z-axis moving / rotating unit 72. The chuck release process is an example of the positive pressure application process of the present invention.

  After the wafer chuck 34 is released, the chuck fixing electromagnetic valve control unit 112 turns on the chuck fixing electromagnetic valve 84 (open state), and the suction port 80 of the Z-axis moving / rotating unit 72 (see FIG. 4). ) To fix the wafer chuck 34 (time T5 in FIG. 13). Note that suction (application of negative pressure) by the suction port 80 may be started before the wafer chuck 34 is released. Before the wafer chuck 34 is released (that is, the internal space S is pressurized), the space between the alignment device 70 and the wafer chuck 34 is set to a negative pressure lower than the atmospheric pressure. The effect of improving the release speed can be obtained.

  In this embodiment, when the wafer chuck 34 is released by pressurizing the internal space S, the shutter control unit 116 closes the shutter unit 58 and blocks the communication path 56 as a second shutter control step. It is preferable to do. If the shutter means 58 is opened before pressurizing the internal space S, the internal space S is opened to the atmosphere via the communication path 56, and a time for releasing the wafer chuck 34 at a low speed occurs, which is in an unstable state. This is because time becomes longer.

(Step S34: Z-axis lowering step)
Next, the Z-axis movement control unit 106 controls the Z-axis drive motor 122 to lower the Z-axis movement / rotation unit 72 as shown in FIG. The position is changed to the height position (standby height position) (time T6 to T7 in FIG. 13).

  Thus, the release operation in the prober 10 according to the first embodiment is completed.

  Next, the effect of the first embodiment will be described.

  According to the first embodiment, the head stage 30 is provided with shutter means 58 that can selectively switch the internal space S between a communication state (non-sealed state) and a non-communication state (sealed state). Therefore, the influence of the components of the shutter means 58 on the temperature distribution and weight balance of the wafer chuck 34 can be eliminated, and the contact operation and release operation by the vacuum suction method can be performed stably.

  Particularly in the first embodiment, the shutter unit 58 preferably employs a configuration that opens and closes the communication passage 56 by moving the open / close valve 302 forward and backward by the air cylinder mechanism 300. Therefore, when the release operation of the wafer chuck 34 is performed, the communication path 56 can be maintained from the external space without losing against the pressurization of the internal space S. As a result, the release operation can be performed more stably, and abnormal needle traces on the electrode pads can be minimized.

  Note that the air cylinder mechanism 300 is configured such that the force that pushes the on-off valve 302 when the release operation of the wafer chuck 34 is performed is greater than the force generated on the on-off valve 302 by pressurization of the internal space S. preferable. The output of the air cylinder mechanism 300 (force for pushing the on-off valve 302) is obtained by the product of the supply air pressure (pressure of air supplied to the cylinder 304) and the cylinder cross-sectional area (effective cross-sectional area of the cylinder 304). Therefore, for example, when the supply air pressure to the air cylinder mechanism 300 and the pressure applied to the internal space S when the wafer chuck 34 is released are approximately the same, the cylinder cross-sectional area is the effective disconnection of the communication path 56. It is preferable that it is larger than the area. As a result, the release operation can be further stabilized.

  In the first embodiment, as an example of a preferable aspect, the shutter unit 58 is configured to open and close the communication path 56 by moving the open / close valve 302 forward and backward by the air cylinder mechanism 300. However, the configuration is not limited thereto. The hydraulic cylinder mechanism may be used. Further, the present invention is not limited to this, and a configuration in which the on-off valve 302 is opened and closed by a motor or a solenoid can be employed.

  Further, in the release operation in the first embodiment, the pressure in the internal space S based on the target release speed (positive) so that the wafer chuck 34 is released from the probe card 32 side by the pressure control unit 115 at the target release speed. Pressure) is controlled. As a result, the wafer chuck 34 is released from the probe card 32 side at a sufficiently high release speed as compared with the case where the internal space S is broken down to the atmosphere by opening to the atmosphere or by minute pressure. As a result, the time during which the wafer chuck 34 is in an unstable state can be eliminated, and damage to the wafer W and the probe 36 can be prevented.

  In the first embodiment, it is preferable that the release operation of the wafer chuck 34 is performed in a state where the shutter unit 58 is closed and the communication path 56 is shut off. If the shutter means 58 is opened before pressurizing the internal space S, the internal space S is opened to the atmosphere via the communication path 56, and a time for releasing the wafer chuck 34 at a low speed occurs, which is in an unstable state. This is because time becomes longer. On the other hand, according to an aspect in which the release operation of the wafer chuck 34 is performed in a state where the shutter unit 58 is closed and the communication path 56 is blocked, a positive pressure is applied to the internal space S in a sealed state. The wafer chuck 34 is released from the probe card 32 side at a sufficiently high release speed. Therefore, an unstable state is hardly generated in the positional relationship between the wafer chuck 34 and the probe card 32, and the wafer chuck 34 can be released stably and reliably without damaging the wafer W and the probe 36.

  In the first embodiment, it is preferable that the cleaning operation of the probe card 32 is performed with the shutter means 58 opened and the communication path 56 opened. As a cleaning operation of the probe card 32, the cleaning wafer is sucked and held on the wafer chuck 34, the cleaning wafer is brought into contact with the probe of the probe card 32, and the wafer chuck is reciprocated up and down to remove the adhered matter on the probe. When the removal operation is performed, if the internal space S is performed in a non-communication state (sealed state) that does not communicate with the external space, “compression” and “extension” are performed in the sealed internal space (sealed space). Will be repeated. As a result, the head stage 30 may be deformed and normal operation cannot be performed, and the probe card may be broken. On the other hand, when the shutter means 58 is opened and the communication path 56 is opened, the cleaning operation of the probe card 32 can be stabilized without causing the above-described problems.

  In the first embodiment, a configuration is adopted in which the connection destination of the internal space S is selectively switched between the negative pressure side (suction device 44 side) and the positive pressure side (pressurization device 45 side) by the pressure switching electromagnetic valve 62. Has been. According to this configuration, the cross-sectional area of the common pipe 60 disposed between the internal space S and the pressure switching electromagnetic valve 62 corresponds to the flow rate of compressed air supplied from the pressurizing device 45 or higher. By setting, the pressure loss at the time of applying a positive pressure to the internal space S can be reduced, and the release operation of the wafer chuck 34 can be stabilized.

  In the contact operation in the first embodiment, the electrode pad on the wafer W and the probe 36 are overdriven by moving the wafer chuck 34 up and down (Z direction) by the Z-axis moving / rotating unit 72. The touching operation is performed. Since the Z-axis movement / rotation unit 72 includes a mechanical drive mechanism including at least a motor (Z-axis drive motor 122), it is possible to accurately adjust the movement distance, movement speed, and the like of the wafer chuck 34. is there. Further, the Z-axis moving / rotating unit 72 can move the wafer chuck 34 at a sufficiently high moving speed as compared with the contact operation by the vacuum suction method as in the prior art. Therefore, when the electrode pad on the wafer W and the probe 36 are brought into contact with each other, the oxide film (insulator) on the electrode pad can be removed by the contact with the probe 36, and the wafer W is not damaged. A good contact can be realized between the electrode pad on the wafer W and the probe 36.

  In the first embodiment, the Z-axis movement / rotation is performed at a timing (second timing; time T9 in FIG. 10) that is later than the timing (first timing; time T7 in FIG. 10) at which decompression of the internal space S is started. Since the fixing of the wafer chuck 34 by the suction port 80 (see FIG. 4) of the section 72 is released, the unstable state (free) where the wafer chuck 34 is not fixed to either side at the moment of switching between these processes. The wafer chuck delivery operation can be performed stably. The above control is realized by controlling the pressure control unit 115 and the chuck fixing electromagnetic valve control unit 112 in cooperation with each other under the control of the overall control unit 100 functioning as the timing control means of the present invention.

  In the first embodiment, the shutter opening process (step S12) is performed before at least the ring-shaped seal member 48 of the wafer chuck 34 is in contact with the head stage 30 (see FIG. 9B). That is, in the Z-axis raising step (step S14), the wafer chuck 34 is further raised from the state where the ring-shaped seal member 48 is in contact with the head stage 30 (see FIG. 9B) (see FIG. 9C). The internal space S is in a communication state (non-sealed state) in communication with the external space via the communication path 56 until the time of () becomes.

  Here, when the wafer chuck 34 is lifted by the Z-axis moving / rotating unit 72 in a non-communication state (sealed state) where the internal space S does not communicate with the external space, the internal space S is increased as the wafer chuck 34 is lifted. The air inside is instantaneously compressed and a strong reaction force is generated. The reaction force causes the head stage 30 to vibrate, and the probe card 32 and the wafer W may come into contact with each other in an unintended manner. In this case, the probe card 32 and the wafer W may be damaged due to abnormal contact between the probe card 32 and the wafer W.

  In contrast, in the first embodiment, as described above, the wafer chuck 34 is lifted by the Z-axis moving / rotating unit 72 in a communication state (non-sealed state) in which the internal space S communicates with the external space. The wafer chuck 34 can be raised stably and efficiently without causing an excessive reaction force (reaction force to return the wafer chuck 34) when the wafer chuck 34 is raised. Damage to the wafer W can be prevented.

  Further, in the first embodiment, the throttle valve 86 that restricts the gas flow rate is provided in the path connected to the suction port 80 of the Z-axis moving / rotating unit 72. When turned off (when released to the atmosphere), the wafer chuck 34 can be prevented from abruptly leaving the Z-axis moving / rotating unit 72, and the transfer operation of the wafer chuck 34 can be performed more stably. .

(Second Embodiment)
Next, a second embodiment will be described. Hereinafter, description of parts common to the above-described embodiment will be omitted, and description will be made focusing on characteristic parts of the present embodiment.

  In the contact operation in the first embodiment, the fixation of the wafer chuck 34 by the Z-axis moving / rotating unit 72 is released at a timing later than the timing at which the internal space S starts to be depressurized. When the fixation of 34 is released, the wafer chuck 34 is detached from the Z-axis movement / rotation unit 72, and the wafer chuck 34 moves so as to be drawn toward the probe card 32. At this time, the movement of the wafer chuck 34 in the horizontal direction (X, Y direction) is restricted only by the contact pressure between the electrode pad on the wafer W and the probe 36 (that is, the needle pressure of the probe card 32). If a disturbance such as vibration is applied from the outside during the decompression process, the wafer chuck 34 is likely to be displaced or tilted in the horizontal direction, and the wafer chuck 34 may not rise straight along the vertical direction (Z direction). There is sex.

  The same problem occurs in the release operation in the first embodiment. That is, when the wafer chuck 34 is released from the probe card 32 side by pressurization of the internal space S, the wafer chuck 34 has a contact pressure between the electrode pad on the wafer W and the probe 36 (that is, the needle pressure of the probe card 32). ) Is restricted only in the horizontal direction (X, Y direction). Therefore, when the wafer chuck 34 is released, if a disturbance such as vibration is applied from the outside, the wafer chuck 34 is displaced in the horizontal direction. There is a possibility that the wafer chuck 34 does not descend straight along the vertical direction (Z direction).

  Therefore, in the second embodiment, the following configuration is provided to improve stability against disturbance in the contact operation and release operation of the wafer chuck 34.

  FIG. 15 is a schematic diagram illustrating the configuration of the prober 10 according to the second embodiment.

  As shown in FIG. 15, the prober 10 according to the second embodiment moves the wafer chuck 34 in the Z direction (vertical direction) as a configuration for improving stability against disturbance in the contact operation and release operation of the wafer chuck 34. ) Is provided. The chuck guide mechanism 200 is an example of a guide unit.

  A plurality of chuck guide mechanisms 200 are provided in parallel along the circumferential direction of the peripheral portion of the wafer chuck 34, specifically, the outer peripheral portion of the chuck guide holding portion 35 integrated with the wafer chuck 34. The chuck guide mechanism 200 regulates horizontal movement of the wafer chuck 34 by vacuum chucking and fixing a chuck guide 204 described later to the head stage 30 before the contact operation and release operation of the wafer chuck 34 are performed. However, it functions as a guide mechanism that moves in parallel with the Z direction. Therefore, at least three chuck guide mechanisms 200 are provided at different positions in the horizontal direction (X, Y direction) orthogonal to the moving direction (Z direction) of the wafer chuck 34 in the wafer chuck 34 (chuck guide holding portion 35). . Although not shown in this example, the chuck guide holding portion 35 is provided with four chuck guide mechanisms 200 at equal intervals (every 90 degrees) along the circumferential direction (only two are shown in FIG. 15). .

  Here, the configuration of the chuck guide mechanism 200 will be described in detail.

  The chuck guide mechanism 200 is movable in the Z direction (vertical direction) in a state where movement in the X and Y directions (horizontal direction) is restricted by the bearing portion 202 formed in the chuck guide holding portion 35 and the bearing portion 202. The chuck guide (guide shaft portion) 204 is configured. The bearing portion 202 is configured by, for example, a ball bearing.

  The chuck guide 204 is rotatably supported by the bearing portion 202, and a fixing portion 206 that detachably fixes the chuck guide 204 to the head stage 30 is provided on the upper portion thereof. A ring-shaped seal member (hereinafter referred to as “chuck guide seal rubber”) 208 is provided on the upper surface of the fixed portion 206, and a suction port (not shown) connected to a suction path (not shown) is provided inside the chuck guide seal rubber 208. And a clearance holding member 210 for keeping the distance (gap) between the fixed portion 206 and the head stage 30 constant. The shape of the clearance holding member 210 is not particularly limited as long as it can maintain a certain gap between the fixed portion 206 and the head stage 30.

  Next, a contact operation (an example of a probe inspection method) in the prober 10 according to the second embodiment will be described. FIG. 16 is a diagram for explaining a contact operation in the prober 10 according to the second embodiment.

  First, similarly to the first embodiment, the wafer chuck fixing process, the alignment process, and the shutter opening process are sequentially performed, and then the Z-axis raising process is performed.

  In the Z-axis ascending step, the wafer chuck 34 is moved (raised) toward the probe card 32 by the Z-axis moving / rotating unit 72, and as a result, as shown in FIG. Are in contact with the electrode pads of each chip of the wafer W in the overdrive state. At this time, the chuck guide seal rubber 208 comes into contact with the lower surface of the head stage 30 as the wafer chuck 34 moves to the probe card 32.

  Next, when the internal space Q formed inside the chuck guide seal rubber 208, the head stage 30, and the fixed portion 206 is decompressed by the suction device 44 through a suction port and a suction path (not shown), the chuck guide 204 is moved upward ( As a result, the fixing portion 206 of the chuck guide 204 is attracted and fixed to the head stage 30 (see FIG. 16B). At this time, the clearance holding member 210 described above secures a certain gap with the head stage 30, so that excessive suction by the fixing portion (suction portion) 206 of the chuck guide 204 is suppressed, and the clearance is fixed to the head stage 30. The tilt of the chuck guide 204 that has been made can be prevented.

  After the chuck guide 204 is sucked and fixed to the head stage 30 in this way, the shutter closing process, the pressure reducing process, and the determining process are sequentially performed as in the first embodiment, and the wafer chuck fixing releasing process is further performed. Is called.

  In the wafer chuck fixation releasing step, when the fixation of the wafer chuck 34 by the Z-axis movement / rotation unit 72 is released, the wafer chuck 34 is detached from the Z-axis movement / rotation unit 72 and the wafer chuck 34 is depressurized by the decompression of the internal space S. Is moved toward the probe card 32. At this time, the wafer guide 34 moves while being guided in the Z direction while the movement in the X and Y directions is restricted by the chuck guide 204 fixed to the head stage 30 (see FIG. 16C).

  Thus, the contact operation in the prober 10 according to the second embodiment is completed.

  Next, a release operation (an example of a probe inspection method) in the prober 10 according to the second embodiment will be described. FIG. 17 is a diagram for explaining a release operation in the prober 10 according to the second embodiment.

  First, similarly to the first embodiment, after the Z-axis raising process is performed, the chuck release process is performed.

  In the chuck release process, after the connection destination of the internal space S is switched from the negative pressure side (suction device 44 side) to the positive pressure side (pressurization device 45 side) by the pressure switching electromagnetic valve 62, the pressure control unit 115 The operation of the pressure regulator 68 is controlled so that the internal space S becomes a pressure (positive pressure) corresponding to the target release speed in the same manner as in the first embodiment. As a result, the wafer chuck 34 is released from the probe card 32 side at a sufficiently high release speed as compared with the case where the internal space S is broken down to the atmosphere by opening to the atmosphere or by minute pressure. At this time, as shown in FIG. 17B, the wafer chuck 34 is guided by the chuck guide 204 in the Z direction while being restricted from moving in the X and Y directions, and supported by the Z axis moving / rotating unit 72. Is done.

  Thereafter, the chuck fixing electromagnetic valve control unit 112 turns on (opens) the chuck fixing electromagnetic valve 84 and fixes the wafer chuck 34 via the suction port 80 (see FIG. 4) of the Z-axis moving / rotating unit 72. To do.

  Next, as a chuck guide release step, the internal space Q formed inside the chuck guide seal rubber 208, the head stage 30, and the fixed portion 206 is vacuum-ruptured by opening to the atmosphere or by minute pressure. Thereby, as shown in FIG. 17C, the chuck guide 204 is released from being attracted to the head stage 30.

  Thereafter, the Z-axis movement control unit 106 controls the Z-axis drive motor 122 to lower the Z-axis movement / rotation unit 72.

  The release operation in the prober 10 according to the second embodiment is thus completed.

  As described above, according to the second embodiment, the chuck guide mechanism that guides the wafer chuck 34 in the Z direction along the chuck guide 204 while the chuck guide 204 (fixed portion 206) is fixed to the head stage 30 by vacuum suction. 200 is provided, it is possible to prevent the wafer chuck 34 from being displaced or tilted when the wafer chuck 34 is transferred in the contact operation or release operation of the wafer chuck 34. Therefore, it is possible to prevent the tilt and the position shift due to the unbalanced load caused by the components of the wafer chuck 34, and to stably perform the delivery operation of the wafer chuck 34 while maintaining the parallelism between the probe card 32 and the wafer W. Thus, it is possible to realize a good contact between the electrode pad on the wafer W and the probe 36.

  In the second embodiment, a fixing method by vacuum suction is shown as a fixing method of the chuck guide mechanism 200, but various known methods can be used as long as the chuck guide 204 can be detachably fixed to the head stage 30. It is possible to adopt a mechanical system such as a clamp.

  In the second embodiment, the chuck guide mechanism 200 is provided on the wafer chuck 34 side and the chuck guide 204 (fixed portion 206) is adsorbed on the head stage 30 side. Alternatively, the chuck guide 204 (fixed portion 206) may be sucked to the wafer chuck 34 side.

  The prober and the probe inspection method according to the present invention have been described in detail above. However, the present invention is not limited to the above examples, and various improvements and modifications can be made without departing from the gist of the present invention. Of course it is good.

  DESCRIPTION OF SYMBOLS 10 ... Prober, 12 ... Measurement unit, 14 ... Loader part, 16 ... Measurement part, 18 ... Load port, 20 ... Wafer cassette, 22 ... Operation panel, 24 ... Transfer unit, 26 ... Transfer arm, 30 ... Head stage, 32 DESCRIPTION OF SYMBOLS ... Probe card, 34 ... Wafer chuck, 34a ... Wafer holding surface, 36 ... Probe, 40 ... Suction port, 42 ... Suction passage, 44 ... Suction device, 44 ... Suction device, 45 ... Pressure device, 46 ... For wafer adsorption Solenoid valve, 48 ... ring-shaped seal member, 50 ... pressure supply passage, 54 ... regulator for pressure reduction, 56 ... communication passage, 58 ... shutter means, 60 ... common piping, 62 ... solenoid valve for pressure switching, 62a ... first port 62b ... second port, 62c ... third port, 64 ... depressurizing piping, 66 ... pressurizing piping, 68 ... pressurizing regulator, 70 ... alignment device, 72 ... Axis moving / rotating part, 72a ... wafer chuck supporting surface, 74 ... X axis moving table, 76 ... Y axis moving table, 78 ... ring seal member, 78 ... ring seal member, 80 ... suction port, 82 ... suction path 84 ... Solenoid valve for fixing the chuck, 86 ... Throttle valve, 88 ... Positioning pin, 90 ... V block, 92 ... Z-axis movement mechanism, 94 ... θ rotation mechanism, 100 ... Overall control unit, 102 ... X-axis movement control unit , 104 ... Y-axis movement control unit, 106 ... Z-axis movement control unit, 108 ... θ rotation control unit, 110 ... Wafer adsorption electromagnetic valve control unit, 112 ... Chuck fixing electromagnetic valve control unit, 114 ... Pressure switching electromagnetic Valve control unit, 115 ... Pressure control unit, 116 ... Shutter control unit, 118 ... X-axis drive motor, 120 ... Y-axis drive motor, 122 ... Z-axis drive motor, 124 ... Rotation drive motor, 200 ... Chuck guide mechanism, 2 DESCRIPTION OF SYMBOLS 2 ... Bearing part, 204 ... Chuck guide, 206 ... Fixing part, 208 ... Chuck guide seal rubber, 210 ... Clearance holding member, 300 ... Air cylinder mechanism, 302 ... Open / close valve, 304 ... Cylinder, 306 ... Piston, 308 ... Piston rod 310 ... Air cylinder driving device, W ... Wafer, S ... Internal space, Q ... Internal space

Claims (6)

A wafer chuck for holding the wafer;
A probe card having a plurality of probes on the surface facing the wafer chuck;
A head stage for holding the probe card;
An annular seal member that forms an internal space between the wafer chuck and the probe card;
A mechanical elevating means for elevating and lowering the wafer chuck fixed to the wafer chuck fixing portion, having a wafer chuck fixing portion for removably fixing the wafer chuck;
Negative pressure application means for adsorbing and holding the wafer chuck on the probe card side by applying a negative pressure to the internal space;
Shutter means provided on the head stage and selectively switchable between a communication state in which the internal space communicates with an external space and a non-communication state in which the internal space does not communicate with the external space;
Prober equipped with. The shutter means selectively switches the internal space between the communication state and the non-communication state by moving the open / close valve forward and backward by an air cylinder mechanism.
The prober according to claim 1. When moving the wafer chuck toward the probe card by the mechanical elevating means, the internal space is in the communication state, and when applying a negative pressure to the internal space by the negative pressure applying means, First shutter control means for controlling the operation of the shutter means so that the internal space is in the non-communication state;
The prober according to claim 1 or 2. A positive pressure applying means for releasing the wafer chuck from the probe card side by applying a positive pressure to the internal space;
Second shutter control means for controlling the operation of the shutter means so that the internal space is in the non-communication state when the wafer chuck is released from the probe card side by the positive pressure applying means;
The prober according to claim 1, comprising: A wafer chuck moving step in which an internal space is formed between the wafer chuck and the probe card by moving the wafer chuck toward the probe card held on the head stage by mechanical lifting means;
A negative pressure application step of adsorbing and holding the wafer chuck on the probe card side by applying a negative pressure to the internal space;
Using the shutter means provided on the head stage and capable of selectively switching between a communication state in which the internal space communicates with the external space and a non-communication state in which the internal space does not communicate with the external space, The operation of the shutter means is controlled so that the internal space is in the non-communication state when the chuck movement process is performed, and the internal space is in the communication state when the negative pressure application process is performed. A first shutter control step,
A probe inspection method comprising: A positive pressure application step of releasing the wafer chuck from the probe card side by applying a positive pressure to the internal space;
A second shutter control step for controlling the operation of the shutter means so that the internal space is in the non-communication state when the positive pressure application step is performed;
A probe inspection method according to claim 5.

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