JP2015103779A - Wiring board - Google Patents

Wiring board Download PDF

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JP2015103779A
JP2015103779A JP2013245835A JP2013245835A JP2015103779A JP 2015103779 A JP2015103779 A JP 2015103779A JP 2013245835 A JP2013245835 A JP 2013245835A JP 2013245835 A JP2013245835 A JP 2013245835A JP 2015103779 A JP2015103779 A JP 2015103779A
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conductor layer
wiring board
conductor
layer
insulating
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正樹 谷村
Masaki Tanimura
正樹 谷村
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Kyocera Circuit Solutions Inc
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Kyocera Circuit Solutions Inc
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Abstract

PROBLEM TO BE SOLVED: To provide a wiring board which reduces a difference in thermal expansion amounts of each insulator layer in thermal history, thereby inhibiting warpage occurring in a substrate.SOLUTION: A wiring board A includes: multiple insulator layers 1a, 1b laminated in a vertical direction; and a ground conductor 2b and a power supply conductor 2c, where a number of circular opening parts are formed, deposited on surfaces of the insulator layers 1a, 1b. The opening parts are formed by a number of large diameter opening parts 8a arranged and small diameter opening parts 8b which are respectively disposed in areas between the large diameter opening parts 8a.

Description

本発明は、半導体集積回路素子等が搭載される高密度配線基板に関するものである。   The present invention relates to a high-density wiring board on which a semiconductor integrated circuit element or the like is mounted.

近年、携帯型のゲーム機や通信機器に代表される電子機器の小型化や高機能化が進む中、それらに使用される配線基板には、小型で高機能な半導体素子が搭載されるため高密度配線化が要求されている。従来、このような高密度な配線基板には、周知のビルドアップ基板が好適に用いられる。
ビルドアップ基板は、例えばコア用の絶縁層の上下両面に導体層とビルドアップ用の絶縁層とを交互に積層されて成るものであり、上面側の最上層に形成された導体層の一部と、半導体素子の電極とがリフロー処理により半田を介して接続される。
In recent years, as electronic devices typified by portable game machines and communication devices have been reduced in size and functionality, the wiring boards used for these devices are equipped with small and highly functional semiconductor elements. High density wiring is required. Conventionally, a well-known build-up board is suitably used for such a high-density wiring board.
The build-up board is formed by alternately laminating conductor layers and build-up insulating layers on both upper and lower surfaces of a core insulating layer, for example, and a part of the conductor layer formed on the uppermost layer on the upper surface side. And the electrodes of the semiconductor element are connected via solder by a reflow process.

このような従来の配線基板を、図3に示す。従来の配線基板Bは、コア用の絶縁層11aの両主面にビルドアップ用の絶縁層11bが複数層ずつ積層されて成る絶縁基板11の上下面および各絶縁層間に導体層12が配設されており、更に絶縁基板11の上下面にソルダーレジスト層13が被着されている。そして、各絶縁層間は、コア用の絶縁層11aに形成された貫通孔14内の貫通導体14aや、ビルドアップ用の絶縁層11bに形成されたビアホール15内のビア導体15aを介して電気的に接続される。
次に、図4に導体層12の要部拡大平面図を示す。導体層12には、電気信号が伝送される信号配線導体層12aや、電位供給のための接地用の導体層12b、あるいは電源用の導体層12cがあり、コア用およびビルドアップ用の各絶縁層11a、11b表面に選択的に形成されている。接地用の導体層12bや電源用の導体層12cは、一般的に信号配線導体層12aに沿うように所定の間隔をあけて配設されている。また、各絶縁層に形成された接地用の導体層12bや電源用の導体層12cは、ビア導体15aにより電気的に接続されている。
さらに、接地用の導体層12bや電源用の導体層12cには、絶縁層11a、11b表面における導体層12の占有面積比率を調整するために、同一径の円形の開口部18が、正方格子状の配列で配置されている。
Such a conventional wiring board is shown in FIG. In the conventional wiring board B, a conductor layer 12 is disposed between the upper and lower surfaces of the insulating substrate 11 in which a plurality of build-up insulating layers 11b are laminated on both main surfaces of the core insulating layer 11a and between the insulating layers. Furthermore, solder resist layers 13 are deposited on the upper and lower surfaces of the insulating substrate 11. Each insulating layer is electrically connected via a through conductor 14a in the through hole 14 formed in the core insulating layer 11a and a via conductor 15a in the via hole 15 formed in the build-up insulating layer 11b. Connected to.
Next, FIG. 4 shows an enlarged plan view of a main part of the conductor layer 12. The conductor layer 12 includes a signal wiring conductor layer 12a through which an electric signal is transmitted, a grounding conductor layer 12b for supplying a potential, or a conductor layer 12c for power supply. It is selectively formed on the surfaces of the layers 11a and 11b. The grounding conductor layer 12b and the power source conductor layer 12c are generally arranged at predetermined intervals along the signal wiring conductor layer 12a. The grounding conductor layer 12b and the power supply conductor layer 12c formed in each insulating layer are electrically connected by a via conductor 15a.
Further, in order to adjust the occupation area ratio of the conductor layer 12 on the surfaces of the insulating layers 11a and 11b, a circular opening 18 having the same diameter is provided in the ground conductor layer 12b and the power source conductor layer 12c. Arranged in an array.

ところで、このような配線基板Bは、コア用の絶縁層11aを中心として上面側に形成された導体層12の占有面積比率と、下面側に形成された導体層12の占有面積比率との差を縮小して、上面側における導体層12を含む積層体の熱膨張係数と、下面側における導体層12を含む積層体の熱膨張係数との差を小さくしておく必要がある。これにより、例えば上述のリフロー処理の際に、上面側の積層体に生じる熱伸縮量と下面側の積層体に生じる熱伸縮量との差を小さくできるため、基板の反りを最小限に抑えることができる。
ところが、上述のように配線基板の高密度化が進んでくると、表面上に占める信号配線導体層12aの割合が高く、接地用の導体層12bや電源用の導体層12cの割合が低い絶縁層11a、11bが形成されるようになる。このような絶縁層11a、11bは、上述のように信号配線導体層12aの周囲に導体層12が被着されない間隔が多く存在するため、導体層12の占有面積比率が非常に小さくなる。しかし、このような絶縁層11a、11bにおける導体層12の占有面積比率に対応させるために、別の絶縁層11a、11b表面における導体層12の占有面積比率を小さくすべく開口部18の径を大きくすると、上述のような同一径の円形の開口部18が正方格子状に形成された配列では、正方格子に沿って互いに縦横に隣接する開口部18同士の間の間隔が狭いものになってしまう。開口部18が形成された接地用の導体層12bや電源用の導体層12cにおいては、互いに隣接する開口部18同士の間の間隔が狭いものになると、接地電位や電源電位を供給するための電流がこれらの開口部18同士の間を通して良好に流れにくくなる。したがって、互いに隣接する開口部18同士の間に所定の間隔を残しておく必要があるので開口部18の径をある程度以上に大きくすることができない。このため、従来の開口部18の配列では、占有面積比率が非常に小さい絶縁層11a、11bに対応するように、占有面積比率を低減させることが困難であった。
By the way, in such a wiring board B, the difference between the occupied area ratio of the conductor layer 12 formed on the upper surface side around the core insulating layer 11a and the occupied area ratio of the conductor layer 12 formed on the lower surface side. It is necessary to reduce the difference between the thermal expansion coefficient of the multilayer body including the conductor layer 12 on the upper surface side and the thermal expansion coefficient of the multilayer body including the conductor layer 12 on the lower surface side. Thus, for example, during the above-described reflow process, the difference between the amount of thermal expansion / contraction that occurs in the laminate on the upper surface side and the amount of thermal expansion / contraction that occurs on the laminate on the lower surface side can be reduced, so that warping of the substrate is minimized Can do.
However, as the density of the wiring board increases as described above, the ratio of the signal wiring conductor layer 12a on the surface is high, and the ratio of the grounding conductor layer 12b and the power source conductor layer 12c is low. Layers 11a and 11b are formed. In such insulating layers 11a and 11b, as described above, there are many intervals where the conductor layer 12 is not deposited around the signal wiring conductor layer 12a, so that the occupied area ratio of the conductor layer 12 becomes very small. However, in order to correspond to the occupied area ratio of the conductor layer 12 in the insulating layers 11a and 11b, the diameter of the opening 18 is reduced in order to reduce the occupied area ratio of the conductor layer 12 on the surface of the other insulating layers 11a and 11b. When the size is increased, in the arrangement in which the circular openings 18 having the same diameter as described above are formed in a square lattice shape, the interval between the openings 18 adjacent to each other vertically and horizontally along the square lattice becomes narrow. End up. In the grounding conductor layer 12b and the power supply conductor layer 12c in which the openings 18 are formed, the gap between the adjacent openings 18 becomes narrow so that the ground potential and the power supply potential can be supplied. It becomes difficult for an electric current to flow favorably between these openings 18. Therefore, since it is necessary to leave a predetermined interval between the adjacent openings 18, the diameter of the openings 18 cannot be increased beyond a certain level. For this reason, in the conventional arrangement of the openings 18, it is difficult to reduce the occupied area ratio so as to correspond to the insulating layers 11a and 11b having an extremely small occupied area ratio.

特開昭61−220398号公報JP-A-61-220398

本発明は、上下に積層された絶縁層における導体層の占有面積比率の差を縮小して、熱履歴時の各絶縁層の熱伸縮量の差を小さくすることで、基板に生じる反りを抑制することが可能な配線基板を提供することを課題とする。   The present invention suppresses the warpage that occurs on the substrate by reducing the difference in the ratio of the area occupied by the conductor layers in the insulating layers stacked one above the other and reducing the difference in the amount of thermal expansion and contraction of each insulating layer during the thermal history. It is an object of the present invention to provide a wiring board that can be used.

本発明における配線基板は、上下に積層された複数の絶縁層と、絶縁層の表面に被着されており、円形の開口部が多数形成された接地用または電源用の導体層とを含む配線基板であって、開口部は、多数配列された大径の開口部と、大径の開口部の間に配置された小径の開口部とから成ることを特徴とするものである。   The wiring board according to the present invention includes a plurality of insulating layers stacked one above the other and a grounding or power supply conductor layer that is attached to the surface of the insulating layer and has a large number of circular openings formed therein. The substrate is characterized in that the opening includes a large-diameter opening arranged in a large number and a small-diameter opening disposed between the large-diameter openings.

本発明の配線基板によれば、接地用または電源用の導体層に形成された開口部は、大径の開口部と、これらの大径の開口部の間に配置された小径の開口部とから成ることから、例えば、所定の間隔を残して互いに縦横に隣接するように配置された4つの大径の開口部同士の間の中央部にこれらの大径の開口部との間に所定の間隔を残したままで小径の開口部を配置することにより、その小径の開口部の分だけ接地用または電源用の導体層が占める面積比率を小さくすることができる。あるいは、大径の開口部を配置できないスペースに小径の開口部を配置することにより、その小径の開口部の分だけ接地用または電源用の導体層が占める面積比率を小さくすることができる。これにより、上述のような占有面積比率が非常に小さい絶縁層に対応する必要がある場合にも、接地用または電源用の導体層の占有面積比率を低減して対応することが可能になる。その結果、上下に積層された絶縁層における導体層の占有面積比率の差を縮小して、熱履歴時の各絶縁層の熱伸縮量の差を小さくすることで基板に生じる反りを抑制することが可能な配線基板を提供することができる。   According to the wiring board of the present invention, the opening formed in the conductor layer for grounding or power supply includes a large-diameter opening, and a small-diameter opening disposed between these large-diameter openings. Therefore, for example, a predetermined interval is provided between these large-diameter openings at the center between the four large-diameter openings arranged so as to be adjacent to each other vertically and horizontally with a predetermined interval. By arranging the small-diameter opening with the space remaining, the area ratio occupied by the conductor layer for grounding or power supply can be reduced by the small-diameter opening. Alternatively, by arranging the small-diameter opening in a space where the large-diameter opening cannot be arranged, the area ratio of the grounding or power supply conductor layer can be reduced by the small-diameter opening. As a result, even when it is necessary to cope with an insulating layer having a very small occupation area ratio as described above, it is possible to cope with a reduction in the occupation area ratio of the conductor layer for grounding or power supply. As a result, the difference in the occupied area ratio of the conductor layers in the insulating layers stacked above and below is reduced, and the difference in the amount of thermal expansion and contraction of each insulating layer during the thermal history is reduced, thereby suppressing the warpage generated in the substrate. It is possible to provide a wiring board capable of satisfying the requirements.

図1は、本発明の配線基板の実施形態の一例を示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing an example of an embodiment of a wiring board according to the present invention. 図2は、本発明の配線基板の実施形態の一例を示す要部拡大平面図である。FIG. 2 is a main part enlarged plan view showing an example of the embodiment of the wiring board of the present invention. 図3は、従来の配線基板の実施形態の一例を示す概略断面図である。FIG. 3 is a schematic cross-sectional view showing an example of an embodiment of a conventional wiring board. 図4は、従来の配線基板の実施形態の一例を示す要部拡大平面図である。FIG. 4 is an enlarged plan view of a main part showing an example of an embodiment of a conventional wiring board.

次に、本発明の配線基板の実施形態の一例を、図1を基にして詳細に説明する。   Next, an example of an embodiment of the wiring board of the present invention will be described in detail with reference to FIG.

図1に本例の配線基板Aの概略断面図を示す。配線基板Aは、コア用の絶縁層1aの両主面にビルドアップ用の絶縁層1bが複数層ずつ積層されて成る絶縁基板1の上下面および各絶縁層1a、1b間に導体層2が配設されており、更に絶縁基板1の上下面にソルダーレジスト層3が被着されている。   FIG. 1 shows a schematic cross-sectional view of the wiring board A of this example. The wiring board A has a conductor layer 2 between the upper and lower surfaces of the insulating substrate 1 in which a plurality of build-up insulating layers 1b are laminated on both main surfaces of the core insulating layer 1a and between the insulating layers 1a and 1b. Further, solder resist layers 3 are deposited on the upper and lower surfaces of the insulating substrate 1.

コア用の絶縁層1aは、例えばガラスクロスにエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させた電気絶縁材料から成り、直径が100〜300μm程度の貫通孔4が複数形成されている。貫通孔4の側壁にはめっき法などにより貫通導体4aが形成されており、コア用の絶縁層1a上下面の導体層2が貫通導体4aを介して電気的に接続されている。コア用の絶縁層1aの厚みは40〜400μm程度である。   The core insulating layer 1a is made of an electrically insulating material in which a glass cloth is impregnated with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin, and a plurality of through holes 4 having a diameter of about 100 to 300 μm are formed. Yes. A through conductor 4a is formed on the side wall of the through hole 4 by plating or the like, and the conductor layers 2 on the upper and lower surfaces of the core insulating layer 1a are electrically connected through the through conductor 4a. The thickness of the core insulating layer 1a is about 40 to 400 μm.

ビルドアップ用の絶縁層1bは、例えばエポキシ樹脂やポリイミド樹脂などの熱硬化性樹脂を含有する電気絶縁材料からなり、その上面から下面にかけて貫通するビアホール5が複数形成されている。ビアホール5には導体層2を構成する導体の一部がビア導体5aとして充填されており、それによりビルドアップ用の絶縁層1bの上下の導体層2間の導通をとっている。   The build-up insulating layer 1b is made of an electrically insulating material containing a thermosetting resin such as an epoxy resin or a polyimide resin, and has a plurality of via holes 5 penetrating from the upper surface to the lower surface. A portion of the conductor constituting the conductor layer 2 is filled in the via hole 5 as a via conductor 5a, thereby establishing conduction between the upper and lower conductor layers 2 of the build-up insulating layer 1b.

導体層2は、主に銅などの良導電性金属で形成されており、コア用の絶縁層1a上に配設されたものは、例えば周知のサブトラクティブ法により形成されており、ビルドアップ用の絶縁層1b上に配設されたものは、例えば周知のセミアディティブ法で形成されている。導体層2には、半導体素子Sや回路基板との間で電気信号の伝送を行う信号配線導体層2aや、電位供給を行うための接地用の導体層2b、あるいは電源用の導体層2c等がある。また、配線基板Aの上面中央部には、半導体素子Sの電極Tと接続される半導体素子接続パッド6が形成されているとともに、配線基板Aの下面には回路基板の電極と接続される回路基板接続パッド7が形成されている。
半導体素子接続パッド6は、信号配線導体層2aやビア導体5a、あるいは貫通導体4aを介して回路基板接続パッド7と電気的に接続されている。
The conductor layer 2 is mainly formed of a highly conductive metal such as copper, and the one disposed on the core insulating layer 1a is formed by, for example, a well-known subtractive method. The material disposed on the insulating layer 1b is formed by, for example, a known semi-additive method. The conductor layer 2 includes a signal wiring conductor layer 2a for transmitting electrical signals to and from the semiconductor element S and the circuit board, a grounding conductor layer 2b for supplying a potential, or a power source conductor layer 2c. There is. Further, a semiconductor element connection pad 6 connected to the electrode T of the semiconductor element S is formed at the center of the upper surface of the wiring board A, and a circuit connected to the electrode of the circuit board on the lower surface of the wiring board A. Substrate connection pads 7 are formed.
The semiconductor element connection pad 6 is electrically connected to the circuit board connection pad 7 via the signal wiring conductor layer 2a, the via conductor 5a, or the through conductor 4a.

ソルダーレジスト層3は、エポキシ樹脂やポリイミド樹脂などの熱硬化性樹脂を含有する電気絶縁材料からなり、配線基板Aと半導体素子Sを接続するとき、あるいは半導体パッケージを回路基板に接続するときのリフロー処理時の熱から、絶縁基板1と導体層2とを保護するために被覆される。絶縁基板1上面側に設けられたソルダーレジスト層3には、絶縁基板1上面の導体層2の一部を半導体素子Sの電極Tと接続される半導体素子パッド6として露出させる露出部3aが形成されており、下面側に設けられたソルダーレジスト層3には、絶縁基板1下面の導体層2の一部を外部回路基板の電極と接続される回路基板接続パッド7として露出させる露出部3bが形成されている。   The solder resist layer 3 is made of an electrically insulating material containing a thermosetting resin such as an epoxy resin or a polyimide resin, and is reflowed when connecting the wiring board A and the semiconductor element S or connecting the semiconductor package to the circuit board. It coat | covers in order to protect the insulated substrate 1 and the conductor layer 2 from the heat | fever at the time of a process. An exposed portion 3a is formed in the solder resist layer 3 provided on the upper surface side of the insulating substrate 1 to expose a part of the conductor layer 2 on the upper surface of the insulating substrate 1 as a semiconductor element pad 6 connected to the electrode T of the semiconductor element S. In the solder resist layer 3 provided on the lower surface side, there is an exposed portion 3b that exposes a part of the conductor layer 2 on the lower surface of the insulating substrate 1 as a circuit board connection pad 7 connected to the electrode of the external circuit board. Is formed.

図2に、導体層2の要部拡大平面図を示す。本例の配線基板Aにおいては、図2に示すように、信号配線導体層2aに沿うように接地または電源用の導体層2b、2cが形成されている。そして、接地または電源用の導体層2b、2cに、大径の開口部8aの配列と、小径の開口部8bの配列とが互いの間に所定の隣接間隔を残して縦横交互に形成されている。なお、この例では、大径の開口部8aの配列と、小径の開口部8bの配列との配列ピッチは半ピッチずつ互い違いにずれて形成されている。
本例においては、大径の開口部8aの配列ピッチおよび小径の開口部8bの配列ピッチは、例えば回路基板接続パッド7の配列ピッチの1/2である。
また、接地または電源用の導体層2b、2cに大径の開口部を配置できないスペースがある場合は、そのスペースに小径の開口部8bを、例えば回路基板接続パッド7の配列ピッチの1/4にして高密度に配列してもよい。このとき、開口部同士の間隔は、35μm以上離して配列することが好ましい。開口部同士の間隔が35μm未満であると、接地または電源用の導体層2b、2cと絶縁層1a、1bとの密着強度が弱くなり剥離してしまう恐れがある。
このように、本発明の配線基板Aによれば、所定の隣接間隔を残して配置された大径の開口部8aの間に、これらの大径の開口部8aとの間に所定の間隔を残して小径の開口部8bが形成されていることから、接地または電源用の導体層2b、2cに、開口部を高い面積比率で形成することができる。このため、絶縁層における導体層の占有面積比率を低くする必要がある場合であっても、導体層の占有面積比率を容易に低減することが可能になる。これにより、上下に積層された絶縁層における導体層の占有面積比率の差を縮小して、熱履歴時における各絶縁層の熱伸縮量差を小さくすることで基板に生じる反りを抑制することが可能な高密度配線の配線基板を提供することができる。
In FIG. 2, the principal part enlarged plan view of the conductor layer 2 is shown. In the wiring board A of this example, as shown in FIG. 2, conductor layers 2b and 2c for grounding or power supply are formed along the signal wiring conductor layer 2a. The conductor layers 2b and 2c for grounding or power supply are alternately formed with an array of large-diameter openings 8a and an array of small-diameter openings 8b that are vertically and horizontally with a predetermined adjacent interval between them. Yes. In this example, the arrangement pitch of the large-diameter openings 8a and the small-diameter openings 8b are alternately shifted by half a pitch.
In this example, the arrangement pitch of the large-diameter openings 8a and the arrangement pitch of the small-diameter openings 8b are, for example, 1/2 of the arrangement pitch of the circuit board connection pads 7.
Further, when there is a space where the large-diameter opening cannot be arranged in the ground or power supply conductor layers 2b and 2c, the small-diameter opening 8b is formed in the space, for example, 1/4 of the arrangement pitch of the circuit board connection pads 7. May be arranged at high density. At this time, it is preferable that the intervals between the openings are arranged with a separation of 35 μm or more. If the distance between the openings is less than 35 μm, the adhesion strength between the grounding or power supply conductor layers 2b, 2c and the insulating layers 1a, 1b may be weakened and peeled off.
As described above, according to the wiring board A of the present invention, a predetermined interval is provided between the large-diameter openings 8a disposed with a predetermined adjacent interval therebetween. Since the small-diameter opening 8b is formed, the opening can be formed at a high area ratio in the ground or power conductor layers 2b and 2c. For this reason, even when it is necessary to reduce the occupied area ratio of the conductor layer in the insulating layer, the occupied area ratio of the conductor layer can be easily reduced. As a result, the difference in the occupied area ratio of the conductor layers in the insulating layers stacked up and down is reduced, and the thermal expansion / contraction amount difference of each insulating layer during the thermal history is reduced, thereby suppressing the warpage generated in the substrate. A possible high-density wiring board can be provided.

1a、1b 絶縁層
2b 接地用の導体層
2c 電源用の導体層
8a 大径の開口部
8b 小径の開口部
A 配線基板
DESCRIPTION OF SYMBOLS 1a, 1b Insulating layer 2b Grounding conductor layer 2c Power supply conductor layer 8a Large diameter opening 8b Small diameter opening A Wiring board

Claims (1)

上下に積層された複数の絶縁層と、該絶縁層の表面に被着されており、円形の開口部が多数形成された接地用または電源用の導体層とを含む配線基板であって、前記開口部は、多数配列された大径の開口部と、該大径の開口部の間に配置された小径の開口部とから成ることを特徴とする配線基板。   A wiring board comprising a plurality of insulating layers stacked one above the other, and a grounding or power supply conductor layer deposited on the surface of the insulating layer and having a large number of circular openings, A wiring board comprising: a plurality of large-diameter openings arranged in a large number; and a small-diameter opening disposed between the large-diameter openings.
JP2013245835A 2013-11-28 2013-11-28 Wiring board Pending JP2015103779A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100880A (en) * 2000-09-25 2002-04-05 Taiyo Yuden Co Ltd Multilayer circuit board
JP2006279086A (en) * 2006-07-14 2006-10-12 Sharp Corp Printed wiring board

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100880A (en) * 2000-09-25 2002-04-05 Taiyo Yuden Co Ltd Multilayer circuit board
JP2006279086A (en) * 2006-07-14 2006-10-12 Sharp Corp Printed wiring board

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