JP2015082650A - Method for processing substrate and apparatus for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove a resist from a substrate where a pattern is disposed within the resist having a hardened surface layer, while suppressing or preventing generation of pattern damages.SOLUTION: An SPM (sulfuric acid hydrogen peroxide mixture) is produced by mixing sulfuric acid and hydrogen peroxide water. The produced SPM is supplied to a substrate coated with a resist having a hardened surface layer. A mixing ratio of sulfuric acid and hydrogen peroxide water used for the production of the SPM is varied while the SPM is supplied to the substrate. By varying the mixing ratio of sulfuric acid and hydrogen peroxide water, a liquid temperature of the SPM supplied to the substrate elevates.

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In the manufacturing process of a semiconductor device, a liquid crystal display device, and the like, a resist peeling process is performed to remove the resist that is no longer needed from a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device.
Patent Document 1 discloses a method of removing from a substrate a resist whose surface layer is cured by ion implantation by supplying a high temperature SPM (Sulfuric acid Hydrogen Peroxide Mixture) to the substrate.

  Patent Document 2 discloses a method of removing a resist whose surface layer is cured by dry etching by rupturing (popping) a cured layer of the resist by heating the substrate.

Japanese Patent Laid-Open No. 2008-4878 JP 2008-209542 A

  A general resist contains a photosensitive resin and a solvent. When the substrate covered with the resist whose inside is sealed by the hardened surface layer is rapidly heated, the solvent inside the resist is vaporized instantaneously, and the internal pressure of the resist is rapidly increased. Therefore, the hardened layer of the resist is ruptured by a sudden increase in internal pressure, and the hardened layer that is difficult to peel is destroyed. However, when a pattern is arranged inside such a resist (for example, see FIG. 7), the pattern may be damaged by an impact generated when the hardened layer is ruptured. When removing the resist by supplying SPM, it is considered that resist bursting can be suppressed or prevented by lowering the temperature of SPM supplied to the substrate. However, if the temperature of the SPM is lowered, the ability of the SPM to peel off decreases, so there is a possibility that the resist cannot be reliably removed from the substrate.

  Accordingly, one of the objects of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of removing a resist from a substrate in which a pattern is disposed in a resist whose surface layer is cured while suppressing or preventing occurrence of pattern damage. That is.

  In order to achieve the above object, the invention according to claim 1 is a method for removing the resist from a substrate in which a pattern is disposed in a resist whose surface layer is cured, and mixing sulfuric acid and hydrogen peroxide solution. In the SPM supply step, the SPM supply step for supplying the SPM generated in step S1 to the substrate and the mixing ratio of sulfuric acid and hydrogen peroxide used for generating the SPM are changed in parallel with the SPM supply step. And a liquid temperature increasing step for increasing the liquid temperature of the SPM supplied to the substrate.

  According to this method, SPM is generated by mixing sulfuric acid and hydrogen peroxide solution. The generated SPM is supplied to a substrate covered with a resist whose surface layer is hardened and whose inside is not hardened. The mixing ratio of sulfuric acid and hydrogen peroxide used for SPM generation is changed when the SPM is supplied to the substrate, so that the temperature of the SPM supplied to the substrate changes the resist peeling. Rises to a suitable peeling temperature. The hardened layer located on the surface layer of the resist reacts with SPM whose liquid temperature rises. Thereby, a hole connecting the inside and the outside of the resist is formed in the hardened layer in the process of increasing the SPM liquid temperature. Therefore, even if the non-cured layer of the resist is vaporized, the vaporized component is discharged through the hole of the cured layer, so that the internal pressure of the resist is hardly increased. Therefore, resist rupture (hardened layer rupture) is less likely to occur than when the SPM at the peeling temperature is supplied to the substrate from the beginning. Thereby, it is possible to remove the resist from the substrate while suppressing or preventing damage to the pattern arranged in the resist.

The invention described in claim 2 further includes a heating step of bringing the substrate temperature closer to the liquid temperature of the SPM at the start of the liquid temperature raising step by heating the substrate before the SPM supplying step. 1. The substrate processing method according to 1.
According to this method, the substrate is heated before the SPM is supplied to the substrate, and the temperature of the substrate is brought close to the liquid temperature (initial temperature) of the SPM when the supply of the SPM to the substrate is started. Therefore, it is possible to suppress or prevent the resist temperature from rapidly rising due to the start of supply of SPM. Therefore, even when the initial temperature of the SPM is high, it is possible to suppress or prevent the internal pressure of the resist from rapidly increasing when the SPM supply starts. Thereby, generation | occurrence | production of the pattern damage resulting from the rupture of a resist can be suppressed or prevented.

The invention described in claim 3 further includes a discharging solution supplying step of supplying a conductive discharging solution having a specific resistance larger than that of the SPM to the substrate before the SPM supplying step. A substrate processing method.
According to this method, the neutralizing liquid that conducts electricity is supplied to the substrate before the SPM is supplied to the substrate. Therefore, when the substrate is charged, the charge moves from the substrate to the charge removal liquid, and the charge is removed from the substrate. In particular, since the specific resistance of the static elimination liquid is larger than the specific resistance of the SPM, the electric charge slowly moves from the substrate to the static elimination liquid. Therefore, it is possible to prevent a device formed on the substrate from being damaged due to heat generated by the rapid movement of electric charges. Thereby, the fall of the quality of a board | substrate can be suppressed or prevented.

According to a fourth aspect of the present invention, there is provided a peroxide according to which the neutralizing solution remaining on the substrate is washed away by supplying a hydrogen peroxide solution to the substrate after the neutralizing solution supplying step and before the SPM supplying step. The substrate processing method according to claim 3, further comprising a hydrogen water supply step.
According to this method, the hydrogen peroxide solution is supplied to the substrate after the charge eliminating solution is supplied to the substrate. Thereafter, SPM is supplied to the substrate. The neutralizing liquid remaining on the substrate is removed from the substrate by supplying hydrogen peroxide solution. Accordingly, the SPM is supplied to the substrate in a state where the remaining amount of the charge removal liquid is reduced. Therefore, it can suppress or prevent that SPM and a static elimination liquid mix on a board | substrate, and the property of SPM changes significantly. Moreover, it can suppress or prevent that SPM and a static elimination liquid mix only in the one part area | region of a board | substrate, and the uniformity of the density | concentration of SPM falls. Thereby, the fall of the quality of a board | substrate can be suppressed or prevented.

  According to a fifth aspect of the present invention, the hydrogen peroxide solution supplying step is a step of supplying a hydrogen peroxide solution having a temperature lower than the liquid temperature of the SPM at the start of the liquid temperature increasing step to the substrate. In the treatment method, in parallel with the hydrogen peroxide solution supplying step, heating the substrate and the hydrogen peroxide solution on the substrate to bring the substrate temperature close to the SPM liquid temperature at the start of the liquid temperature increasing step. The substrate processing method according to claim 4, further comprising a step.

  According to this method, after the charge eliminating liquid is supplied to the substrate, hydrogen peroxide water having a temperature lower than the initial temperature of the SPM (the temperature of the SPM when the supply of the SPM to the substrate is started) is supplied to the substrate. The Then, when the hydrogen peroxide solution is held on the substrate, the substrate is heated, and the temperature of the substrate is brought close to the initial temperature of SPM. Therefore, it is possible to suppress or prevent the resist temperature from rapidly rising due to the start of supply of SPM. Thereby, generation | occurrence | production of the pattern damage resulting from the rupture of a resist can be suppressed or prevented.

  The invention according to claim 6 is an apparatus for removing the resist from the substrate in which the pattern is disposed in the resist whose surface layer is hardened, and generates SPM by mixing sulfuric acid and hydrogen peroxide solution. Generating means, SPM supplying means for supplying the SPM generated by the SPM generating means to the substrate, mixing ratio changing means for changing the mixing ratio of sulfuric acid and hydrogen peroxide used for generating SPM, and the SPM generation And a control device for controlling the mixing ratio changing means.

  The control device includes an SPM supplying step of supplying SPM generated by mixing sulfuric acid and hydrogen peroxide water to the SPM generating unit to the substrate, sulfuric acid used for generating SPM, and an excess amount of sulfuric acid. A liquid temperature increasing step for increasing the liquid temperature of the SPM supplied to the substrate in the SPM supplying step by changing the mixing ratio changing means in parallel with the SPM supplying step to the mixing ratio changing means; Run. According to this configuration, the same effect as described above can be obtained.

  According to a seventh aspect of the present invention, the substrate processing apparatus further includes a heating unit that heats the substrate, and the control device causes the heating unit to heat the substrate before the SPM supply step, thereby heating the substrate. The substrate processing apparatus according to claim 6, further comprising a heating step of bringing a temperature close to a liquid temperature of the SPM at the start of the liquid temperature raising step. According to this configuration, the same effect as described above can be obtained.

  The invention according to claim 8 is characterized in that the substrate processing apparatus further includes a discharging solution supplying means for supplying a conductive discharging solution having a specific resistance larger than that of the SPM to the substrate, and the control device includes the SPM supplying step. 8. The substrate processing apparatus according to claim 6, wherein a discharging solution supplying step is further performed in which a discharging solution having a specific resistance larger than that of SPM is supplied to the substrate by the discharging solution supplying unit. According to this configuration, the same effect as described above can be obtained.

  According to a ninth aspect of the present invention, the substrate processing apparatus further includes a hydrogen peroxide solution supply means for supplying hydrogen peroxide solution to the substrate, and the control device is provided after the charge removal solution supplying step. The hydrogen peroxide solution supplying step of washing away the charge-removing solution remaining on the substrate by causing the hydrogen peroxide solution supplying means to supply the hydrogen peroxide solution to the substrate before the SPM supplying step is further performed. The substrate processing apparatus according to claim 1. According to this configuration, the same effect as described above can be obtained.

  According to a tenth aspect of the present invention, the substrate processing apparatus further includes a heating unit that heats the substrate, and the hydrogen peroxide solution supply unit is lower in temperature than the liquid temperature of the SPM at the start of the liquid temperature increasing step. The hydrogen peroxide solution is supplied to the substrate, and the control device causes the heating means to heat the substrate and the hydrogen peroxide solution on the substrate in parallel with the hydrogen peroxide solution supply step. The substrate processing apparatus according to claim 9, further comprising a heating step of bringing the temperature of the substrate closer to the SPM liquid temperature at the start of the liquid temperature raising step. According to this configuration, the same effect as described above can be obtained.

1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. It is the schematic diagram which looked at the inside of the chamber with which the substrate processing apparatus concerning one Embodiment of this invention was equipped horizontally. It is a typical top view of a spin base and the structure relevant to this. It is a longitudinal cross-sectional view of an infrared heater. It is a time chart which shows the outline of the example of a process performed by the processing unit. It is a graph which shows the change of the liquid temperature of SPM supplied to a board | substrate. It is a schematic diagram which shows the state of the board | substrate before the liquid temperature of SPM reaches peeling temperature.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a schematic view of the inside of the chamber 4 provided in the substrate processing apparatus 1 according to one embodiment of the present invention viewed horizontally. FIG. 3 is a schematic plan view of the spin base 7 and the configuration related thereto. FIG. 4 is a longitudinal sectional view of the infrared heater 58.

  As shown in FIG. 1, the substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W using a processing liquid and a processing gas, a substrate transport robot CR that loads and unloads the substrate W into and from the chamber 4 of each processing unit 2, and a substrate processing And a control device 3 that controls the operation of the device provided in the device 1 and the opening and closing of a valve.

  As shown in FIG. 2, each processing unit 2 is a single-wafer type unit. Each processing unit 2 holds a box-shaped chamber 4 having an internal space and a single substrate W in the chamber 4 in a horizontal posture, and a substrate around a vertical substrate rotation axis A1 passing through the center of the substrate W. A spin chuck 5 that rotates W, a processing liquid supply device that supplies a processing liquid such as a chemical liquid or a rinsing liquid to the substrate W held by the spin chuck 5, and a substrate W held by the spin chuck 5 And a cylindrical cup 6 surrounding the spin chuck 5 around the substrate rotation axis A1.

  As shown in FIG. 2, the spin chuck 5 includes a disc-shaped spin base 7 held in a horizontal posture, a plurality of chuck pins 8 protruding upward from the outer peripheral portion of the upper surface of the spin base 7, and a plurality of chucks. A chuck opening / closing mechanism (not shown) for opening and closing the pin 8. The spin chuck 5 further rotates the spin shaft 9 downward from the center of the spin base 7 along the substrate rotation axis A1 and rotates the spin shaft 9 to move the spin base 7 and the chuck pin 8 around the substrate rotation axis A1. And a spin motor 10 that rotates the motor.

  As shown in FIG. 3, the outer diameter of the spin base 7 is larger than the diameter of the substrate W. The center line of the spin base 7 is disposed on the substrate rotation axis A1. The plurality of chuck pins 8 are held by the spin base 7 at the outer periphery of the spin base 7. The plurality of chuck pins 8 are arranged at intervals in the circumferential direction (direction around the substrate rotation axis A1). The chuck pin 8 is vertically between a closed position (the position shown in FIGS. 2 and 3) where the chuck pin 8 is pressed against the peripheral end surface of the substrate W and an open position where the chuck pin 8 is separated from the peripheral end surface of the substrate W. It can rotate with respect to the spin base 7 around a pin rotation axis. The chuck opening / closing mechanism rotates the chuck pin 8 around the pin rotation axis.

  The control device 3 controls the chuck opening / closing mechanism so that the plurality of chuck pins 8 hold the substrate W (the state shown in FIGS. 2 and 3), and the plurality of chuck pins 8 hold the substrate W. The state of the plurality of chuck pins 8 is switched between the released state and the released state. When the substrate W is transported to the spin chuck 5, the control device 3 retracts each chuck pin 8 to the open position. In this state, the control device 3 causes the substrate transport robot CR to place the substrate W on the plurality of chuck pins 8. Thereafter, the control device 3 moves each chuck pin 8 to the closed position. Accordingly, the substrate W is held by the plurality of chuck pins 8 in a state where the lower surface of the substrate W and the upper surface of the spin base 7 are separated in the vertical direction. In this state, when the control device 3 rotates the spin motor 10, the substrate W rotates around the substrate rotation axis A <b> 1 together with the spin base 7 and the chuck pins 8.

As shown in FIG. 2, the processing liquid supply apparatus discharges a chemical liquid such as SPM (mixed liquid containing H ₂ SO ₄ and H ₂ O ₂ ), which is an example of a resist stripping liquid, toward the upper surface of the substrate W. The first chemical liquid nozzle 11, the first nozzle arm 12 having the first chemical liquid nozzle 11 attached to the tip, and the first nozzle moving device that moves the first chemical liquid nozzle 11 by moving the first nozzle arm 12. 13 and so on.

  As shown in FIG. 3, the first nozzle moving device 13 rotates the first nozzle arm 12 about the first nozzle rotation axis A <b> 2 extending in the vertical direction around the spin chuck 5, so that the substrate is viewed in a plan view. The 1st chemical | medical solution nozzle 11 is moved horizontally along the locus | trajectory which passes along the upper surface center part of W. The first nozzle moving device 13 includes a processing position where the chemical liquid discharged from the first chemical liquid nozzle 11 is deposited on the upper surface of the substrate W, and a retreat position where the first chemical liquid nozzle 11 is retracted around the spin chuck 5 in plan view. The first chemical solution nozzle 11 is moved horizontally between (the position shown in FIG. 3).

As shown in FIG. 2, the processing liquid supply apparatus includes a first chemical liquid pipe 14 that guides a chemical liquid such as SPM to the first chemical liquid nozzle 11, sulfuric acid that is guided to the first chemical liquid nozzle 11 by the first chemical liquid pipe 14, and A stirring pipe 15 for stirring the hydrogen peroxide solution and a mixing valve 16 for mixing the sulfuric acid and the hydrogen peroxide solution supplied to the first chemical liquid pipe 14 upstream of the stirring pipe 15 are included.
As shown in FIG. 2, the treatment liquid supply apparatus includes a sulfuric acid tank 17 that contains sulfuric acid (liquid), and the sulfuric acid in the sulfuric acid tank 17 is heated to a temperature higher than room temperature (60 to 90 ° C.) by heating the sulfuric acid. The first heater 21 is maintained at a constant temperature within the range of, for example, 80 ° C., the sulfuric acid pipe 18 that guides the sulfuric acid in the sulfuric acid tank 17 to the mixing valve 16, and the sulfuric acid valve 19 that opens and closes the inside of the sulfuric acid pipe 18. And a sulfuric acid flow rate adjusting valve 20 for increasing or decreasing the flow rate of sulfuric acid supplied from the sulfuric acid pipe 18 to the mixing valve 16. Although not shown, the sulfuric acid flow rate adjusting valve 20 includes a valve body in which a valve seat is provided, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. Including. The same applies to other flow rate adjusting valves.

  As shown in FIG. 2, the treatment liquid supply apparatus includes a hydrogen peroxide solution tank 22 that stores hydrogen peroxide solution, and a room temperature (a constant temperature within a range of 20 to 30 ° C. within the hydrogen peroxide solution tank 22. , 25 ° C.) from the hydrogen peroxide solution pipe 23 for guiding the hydrogen peroxide solution to the mixing valve 16, the hydrogen peroxide solution valve 24 for opening and closing the inside of the hydrogen peroxide solution pipe 23, and the hydrogen peroxide solution pipe 23. A hydrogen peroxide flow rate adjusting valve 25 that increases or decreases the flow rate of the hydrogen peroxide solution supplied to the mixing valve 16.

  When the sulfuric acid valve 19 is opened, high-temperature sulfuric acid is supplied from the sulfuric acid pipe 18 to the mixing valve 16 at a flow rate corresponding to the opening degree of the sulfuric acid flow rate adjusting valve 20. When the hydrogen peroxide solution valve 24 is opened, the hydrogen peroxide solution at room temperature in the hydrogen peroxide solution tank 22 flows at a flow rate corresponding to the opening of the hydrogen peroxide solution flow adjustment valve 25. It is supplied from the pipe 23 to the mixing valve 16. As a result, sulfuric acid and hydrogen peroxide water are supplied to the mixing valve 16 at a predetermined ratio (for example, X1> Y1 where the ratio of sulfuric acid is “X1” and the ratio of hydrogen peroxide water is “Y1”). The

  The sulfuric acid and the hydrogen peroxide solution supplied to the mixing valve 16 are supplied from the first chemical liquid pipe 14 to the first chemical liquid nozzle 11 via the stirring pipe 15. In the process, sulfuric acid and hydrogen peroxide solution are mixed by the mixing valve 16 and stirred by the stirring pipe 15. As a result, the sulfuric acid and the hydrogen peroxide solution are mixed uniformly, and the sulfuric acid and hydrogen peroxide solution mixture (SPM) becomes lower than the temperature of the sulfuric acid and hydrogen peroxide solution before mixing. It is heated to a high temperature (for example, 100 ° C. or higher). Therefore, high-temperature SPM generated by mixing sulfuric acid and hydrogen peroxide solution is discharged from the first chemical liquid nozzle 11. SPM is a mixed chemical solution containing peroxymonosulfuric acid having strong oxidizing power.

As shown in FIG. 2, the treatment liquid supply apparatus includes a second chemical liquid nozzle 29 that discharges a chemical liquid such as SC1 (mixed liquid containing NH ₄ OH and H ₂ O ₂ ) toward the upper surface of the substrate W, The second chemical liquid nozzle 29 includes a second nozzle arm 30 attached to the tip portion, and a second nozzle moving device 31 that moves the second chemical liquid nozzle 29 by moving the second nozzle arm 30.
As shown in FIG. 3, the second nozzle moving device 31 rotates the second nozzle arm 30 about the second nozzle rotation axis A <b> 3 extending in the vertical direction around the spin chuck 5, so that the substrate is viewed in a plan view. The 2nd chemical | medical solution nozzle 29 is moved horizontally along the locus | trajectory which passes along the upper surface center part of W. The second nozzle moving device 31 includes a processing position where the chemical liquid discharged from the second chemical liquid nozzle 29 is deposited on the upper surface of the substrate W, and a retreat position where the second chemical liquid nozzle 29 is retracted around the spin chuck 5 in plan view. The 2nd chemical | medical solution nozzle 29 is moved horizontally between.

  As shown in FIG. 2, the processing liquid supply apparatus includes a second chemical liquid pipe 33 that guides SC1 having a temperature lower than the SPM temperature and higher than the room temperature (for example, 30 to 50 ° C.) to the second chemical liquid nozzle 29; And a second chemical liquid valve 34 that opens and closes the inside of the second chemical liquid pipe 33. When the second chemical liquid valve 34 is opened, SC1 from the second chemical liquid supply source is supplied from the second chemical liquid pipe 33 to the second chemical liquid nozzle 29. Thereby, SC1 (liquid) at 40 ° C., for example, is discharged from the second chemical liquid nozzle 29.

  As shown in FIG. 2, the processing liquid supply apparatus includes a first rinse liquid nozzle 36 that discharges the rinse liquid toward the upper surface of the substrate W, and a second rinse liquid nozzle that discharges the rinse liquid toward the upper surface of the substrate W. 37, a third nozzle arm 38 to which the first rinse liquid nozzle 36 and the second rinse liquid nozzle 37 are attached at the tip, and the third nozzle arm 38 are moved to move the first rinse liquid nozzle 36 and the second rinse liquid nozzle 36. And a third nozzle moving device 39 for moving the rinse liquid nozzle 37.

  Although not shown, the third nozzle moving device 39 rotates the third nozzle arm 38 around the third nozzle rotation axis extending in the vertical direction around the spin chuck 5, whereby the upper surface of the substrate W is viewed in plan view. The first rinse liquid nozzle 36 and the second rinse liquid nozzle 37 are moved horizontally along a trajectory passing through the central portion. The third nozzle moving device 39 includes a processing position where the rinse liquid discharged from the first rinse liquid nozzle 36 and the second rinse liquid nozzle 37 is deposited on the upper surface of the substrate W, and the first rinse liquid nozzle 36 and the second rinse liquid. The first rinsing liquid nozzle 36 and the second rinsing liquid nozzle 37 are moved horizontally between the liquid nozzle 37 and the retreat position where the liquid nozzle 37 has retreated around the spin chuck 5.

  As shown in FIG. 2, the treatment liquid supply device opens and closes the first rinse liquid pipe 40 that guides the rinse liquid from the rinse liquid supply source to the first rinse liquid nozzle 36 and the inside of the first rinse liquid pipe 40. A first rinse liquid valve 41. The treatment liquid supply device further includes a second rinse liquid pipe 42 that guides the rinse liquid from the rinse liquid supply source to the second rinse liquid nozzle 37, and a second rinse liquid valve that opens and closes the inside of the second rinse liquid pipe 42. 43.

  When the first rinse liquid valve 41 is opened, a rinse liquid at room temperature (for example, 25 ° C.) is discharged from the first rinse liquid nozzle 36. Similarly, when the second rinse liquid valve 43 is opened, a rinse liquid at room temperature (for example, 25 ° C.) is discharged from the second rinse liquid nozzle 37. The rinse liquid supplied to the first rinse liquid nozzle 36 is pure water (Deionzied water). The rinse liquid supplied to the second rinse liquid nozzle 37 is carbonated water.

  The rinse liquid supplied to the first rinse liquid nozzle 36 and the second rinse liquid nozzle 37 is not limited to pure water and carbonated water, but is electrolytic ion water, hydrogen water, ozone water, IPA (isopropyl alcohol), or diluted concentration ( For example, it may be about 10 to 100 ppm of hydrochloric acid water. Carbonated water, electrolytic ion water, hydrogen water, ozone water, IPA, and dilute hydrochloric acid water are all examples of a neutralizing liquid that has higher specific resistance than SPM and conducts electricity.

  As shown in FIG. 2, the cup 6 is disposed outside the substrate W held by the spin chuck 5. The cup 6 surrounds the spin base 7. When the processing liquid is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the processing liquid is scattered from the substrate W to the periphery of the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion of the cup 6 opened upward is disposed above the spin base 7. Therefore, the treatment liquid such as the chemical liquid and the rinse liquid discharged around the substrate W is received by the cup 6. Then, the processing liquid received by the cup 6 is sent to a collecting device or a draining device (not shown).

As shown in FIG. 2, the heating apparatus includes an infrared heater 58 disposed above the substrate W held by the spin chuck 5, a heater arm 59 having the infrared heater 58 attached to the tip, and a heater arm 59. And a heater moving device 60 that moves the infrared heater 58 by moving the heater.
As shown in FIG. 2, the infrared heater 58 includes an infrared lamp 61 that emits light including infrared rays, and a lamp housing 62 that houses the infrared lamp 61. The infrared lamp 61 is disposed in the lamp housing 62. As shown in FIG. 3, the lamp housing 62 is smaller than the substrate W in plan view. Therefore, the infrared heater 58 is smaller than the substrate W in plan view. The infrared lamp 61 and the lamp housing 62 are attached to the heater arm 59. Therefore, the infrared lamp 61 and the lamp housing 62 move together with the heater arm 59.

  As shown in FIG. 4, the infrared lamp 61 is connected to the control device 3. The power supplied to the infrared lamp 61 is adjusted by the control device 3. Infrared lamp 61 is, for example, a halogen lamp. The infrared lamp 61 may be another heating element such as a carbon heater instead of the halogen lamp. The infrared lamp 61 includes a filament and a quartz tube that accommodates the filament. At least a part of the lamp housing 62 is formed of a material having light transmissivity and heat resistance such as quartz. Therefore, when the infrared lamp 61 emits light, the light from the infrared lamp 61 passes through the lamp housing 62 and is emitted outward from the outer surface of the lamp housing 62.

  As shown in FIG. 4, the lamp housing 62 has a bottom wall parallel to the upper surface of the substrate W. The infrared lamp 61 is disposed above the bottom wall. The bottom surface of the bottom wall includes a substrate facing surface 58a that is parallel to and flat with the top surface of the substrate W. In a state where the infrared heater 58 is disposed above the substrate W, the substrate facing surface 58a of the infrared heater 58 faces the upper surface of the substrate W in the vertical direction with a space therebetween. When the infrared lamp 61 emits light in this state, light including infrared light is directed from the substrate facing surface 58a toward the upper surface of the substrate W and is irradiated onto the upper surface of the substrate W. The substrate facing surface 58a is, for example, a circle having a diameter smaller than the radius of the substrate W. The substrate facing surface 58a is not limited to a circle, and may have a rectangular shape whose length in the longitudinal direction is not less than the radius of the substrate W and less than the diameter of the substrate W, or may be a shape other than a circle and a rectangle. .

  As shown in FIG. 4, the infrared lamp 61 includes a ring-shaped end portion 63 arranged along a horizontal plane, and a pair of vertical portions 64 extending upward from one end and the other end of the ring-shaped portion 63. Including. The lamp housing 62 includes a transmission member that transmits infrared rays. The transmission member includes a cylindrical storage portion 65 extending in the vertical direction and a disk-shaped bottom plate portion 66 that closes the lower end of the storage portion 65. The lamp housing 62 further includes a lid member 67 that closes the upper end of the accommodating portion 65 and a support member 68 that supports the pair of vertical portions 64 of the infrared lamp 61. The infrared lamp 61 is supported by the lid member 67 via the support member 68. The annular portion 63 of the infrared lamp 61 is disposed in a space defined by the accommodating portion 65, the bottom plate portion 66, and the lid member 67. The bottom plate portion 66 is disposed below the infrared lamp 61 and faces the infrared lamp 61 in the vertical direction with a space therebetween.

  As shown in FIG. 2, the heater moving device 60 holds the infrared heater 58 at a predetermined height. As shown in FIG. 3, the heater moving device 60 moves the infrared heater 58 horizontally by rotating the heater arm 59 around the heater rotation axis A <b> 4 extending in the vertical direction around the spin chuck 5. Thereby, the irradiation position (a part of the region within the upper surface of the substrate W) irradiated with infrared rays moves within the upper surface of the substrate W. The heater moving device 60 moves the infrared heater 58 horizontally along a locus passing through the center of the substrate W in plan view. Therefore, the infrared heater 58 moves in a horizontal plane including the upper side of the spin chuck 5. The heater moving device 60 changes the distance between the substrate facing surface 58a and the substrate W by moving the infrared heater 58 in the vertical direction.

  As shown in FIG. 4, the light from the infrared heater 58 is irradiated to the irradiation position in the upper surface of the substrate W. The control device 3 rotates the infrared heater 58 around the heater rotation axis A4 by the heater moving device 60 while rotating the substrate W by the spin chuck 5 in a state where the infrared heater 58 emits infrared rays. Thereby, the upper surface of the substrate W is scanned by the irradiation position as the heating position. Therefore, when the infrared lamp 61 emits infrared light while a liquid such as a processing liquid is held on the substrate W, the temperature of the substrate W and the processing liquid rises.

  FIG. 5 is a time chart showing an outline of a processing example performed by the processing unit 2. FIG. 6 is a graph showing changes in the liquid temperature of the SPM supplied to the substrate W. FIG. 7 is a schematic diagram showing a state of the substrate W before the SPM liquid temperature reaches the peeling temperature. As shown in FIG. 7, in the following, the surface (device forming surface) is partially covered by a resist (a thin film of photoresist) including a hardened layer located on the surface layer and a non-hardened layer covered with the hardened layer. A resist stripping process for removing the resist from the substrate W in which the entire pattern formed on the surface is disposed inside the resist will be described. In the following, reference is mainly made to FIG. 2 and FIG. 6 and 7 will be referred to as appropriate.

  When the substrate W is processed by the processing unit 2, a loading process (step S <b> 1 in FIG. 5) for loading the substrate W into the chamber 4 is performed. Specifically, the control device 3 causes the hand of the substrate transport robot CR holding the substrate W to enter the chamber 4 in a state where all the nozzles and the like are retracted from above the spin chuck 5. Then, the control device 3 causes the substrate transport robot CR to place the substrate W on the plurality of chuck pins 8. Thereafter, the control device 3 retracts the hand of the substrate transport robot CR from the chamber 4. Further, after the substrate W is placed on the plurality of chuck pins 8, the control device 3 moves each chuck pin 8 from the open position to the closed position. Thereafter, the control device 3 starts the rotation of the substrate W by the spin motor 10.

  Next, a discharging solution supplying step (step S2 in FIG. 5) for supplying carbonated water, which is an example of a discharging solution, to the substrate W is performed. Specifically, the control device 3 controls the third nozzle moving device 39 to move the second rinsing liquid nozzle 37 as a charge eliminating liquid nozzle from the retracted position to the processing position. Thereafter, the control device 3 opens the second rinsing liquid valve 43 and causes the second rinsing liquid nozzle 37 to discharge carbonated water at room temperature toward the center of the upper surface of the substrate W. When a predetermined time elapses after the second rinse liquid valve 43 is opened, the control device 3 closes the second rinse liquid valve 43 and stops the discharge of carbonated water from the second rinse liquid nozzle 37. Thereafter, the control device 3 retracts the second rinse liquid nozzle 37 from above the substrate W by controlling the third nozzle moving device 39.

  The carbonated water discharged from the second rinse liquid nozzle 37 lands on the upper surface of the substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, carbonated water is supplied to the entire upper surface of the substrate W, and a liquid film of carbonated water covering the entire upper surface of the substrate W is formed on the substrate W. Therefore, when the substrate W is charged, the charge moves from the substrate W to carbonated water, and the charge is removed from the substrate W. In particular, since the specific resistance of carbonated water is larger than the specific resistance of SPM, the charge slowly moves from the substrate W to the carbonated water. Therefore, it is possible to prevent damage to the device formed on the substrate W due to heat generation or discharge due to a rapid charge movement.

  Note that when the second rinsing liquid nozzle 37 is discharging carbonated water, the control device 3 may stop the carbonated liquid landing position with respect to the upper surface of the substrate W at the central part, or the central part and the peripheral part. You may move between. In addition, after the liquid film of carbonated water is formed on the substrate W, the control device 3 rotates the substrate W at a low rotation speed (for example, 1 to 30 rpm) or stops the rotation of the substrate W, and the second By stopping the discharge of carbonated water from the rinsing liquid nozzle 37, a carbonated liquid film covering the entire upper surface of the substrate W may be held on the substrate W in a state where the discharge of carbonated water is stopped.

Next, a first hydrogen peroxide solution supply step (step S3 in FIG. 5) for supplying hydrogen peroxide solution at room temperature to the substrate W, and a heating step (in which the liquid on the substrate W and the substrate W is heated by the infrared heater 58) Step S4) of FIG. 5 is performed in parallel.
Regarding the first hydrogen peroxide solution supply process, the control device 3 controls the first nozzle moving device 13 to move the first chemical solution nozzle 11 from the retracted position to the processing position. Accordingly, the first chemical liquid nozzle 11 is disposed above the substrate W. Thereafter, the control device 3 opens the hydrogen peroxide solution valve 24 in a state where the sulfuric acid valve 19 is closed, and the first chemical solution nozzle toward the center of the upper surface of the substrate W rotating the hydrogen peroxide solution at room temperature. 11 is discharged. When the first chemical liquid nozzle 11 discharges the hydrogen peroxide solution, the control device 3 may stop the hydrogen peroxide solution landing position on the upper surface of the substrate W at the central portion, or the central portion and the periphery. You may move between parts.

  The hydrogen peroxide solution discharged from the first chemical solution nozzle 11 is deposited on the center of the upper surface of the substrate W covered with carbonated water. Therefore, the carbonated water on the substrate W is swept away from the central portion to the periphery thereof. The hydrogen peroxide solution deposited on the center of the upper surface of the substrate W flows outward along the upper surface of the substrate W by centrifugal force. Similarly, carbonated water on the substrate W flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the outer edge of the liquid film of the hydrogen peroxide solution having a circular shape in plan view instantaneously spreads from the center of the substrate W to the periphery of the substrate W, and the carbonated water on the substrate W is replaced with the hydrogen peroxide solution in a short time. Thereby, carbonated water is removed from the substrate W.

  Regarding the heating process, the control device 3 controls the heater moving device 60 to move the infrared heater 58 from the retracted position to the processing position. Further, the control device 3 causes the infrared heater 58 to start emitting light before or after the infrared heater 58 moves above the substrate W. As a result, the temperature of the infrared heater 58 rises to a heating temperature (for example, 120 ° C. or less) equal to or higher than the SPM liquid temperature at the start of supplying SPM to the substrate W, and is maintained at the heating temperature. Thereafter, the control device 3 moves the infrared heater 58 by the heater moving device 60 to move the infrared irradiation position with respect to the upper surface of the substrate W within the upper surface of the substrate W. Thereby, the temperature of the liquid on the substrate W and the substrate W is brought close to the heating temperature. The control device 3 stops the light emission of the infrared heater 58 after the substrate W is heated by the infrared heater 58 for a predetermined time. Thereafter, the control device 3 retracts the infrared heater 58 from above the substrate W by controlling the heater moving device 60.

Next, the SPM supply process (step S5 in FIG. 5) for supplying SPM, which is an example of a resist stripping solution, to the substrate W, and the SPM supplied to the substrate W by changing the mixing ratio of sulfuric acid and hydrogen peroxide solution. The liquid temperature increasing step (step S6 in FIG. 5) for increasing the liquid temperature is performed in parallel.
Regarding the SPM supply process, the control device 3 opens the sulfuric acid valve 19 in a state where the first chemical liquid nozzle 11 is discharging hydrogen peroxide solution above the substrate W after the emission of the infrared heater 58 is stopped. . Thereby, sulfuric acid and hydrogen peroxide water are mixed by a predetermined mixing ratio, and SPM is generated. Therefore, SPM having an initial temperature (for example, 50 ° C.) higher than the temperature of sulfuric acid and hydrogen peroxide solution before mixing is discharged from the first chemical nozzle 11 toward the upper surface of the rotating substrate W. When the first chemical liquid nozzle 11 is discharging SPM, the control device 3 may make the SPM landing position with respect to the upper surface of the substrate W stationary at the central portion, or move between the central portion and the peripheral portion. You may let them.

  With respect to the liquid temperature increasing step, as shown in FIG. 6, the control device 3 changes the opening degree of at least one of the sulfuric acid flow rate adjustment valve 20 and the hydrogen peroxide flow rate adjustment valve 25 to thereby change the first chemical liquid nozzle 11. The mixture ratio of sulfuric acid and hydrogen peroxide solution was changed from the initial mixture ratio to the stripping mixture ratio continuously or stepwise so that the ratio of sulfuric acid to hydrogen peroxide solution decreased while maintaining the SPM discharge flow rate from Change gradually to Specifically, the control device 3 decreases the flow rate of sulfuric acid mixed with the hydrogen peroxide solution and increases the flow rate of hydrogen peroxide solution mixed with the sulfuric acid. As a result, the amount of heat generated by mixing sulfuric acid and hydrogen peroxide water increases, and the liquid temperature of the SPM rises gently. Therefore, an SPM having a peeling temperature (for example, 160 ° C.) higher than the initial temperature is generated and discharged from the first chemical nozzle 11.

  The SPM discharged from the first chemical liquid nozzle 11 lands on the upper surface of the substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, SPM is supplied to the entire upper surface of the substrate W, and the hydrogen peroxide solution on the substrate W is replaced with SPM. Therefore, a liquid film of SPM that covers the entire upper surface of the substrate W is formed on the substrate W. The SPM before reaching the stripping temperature chemically reacts with the resist on the substrate W. Thereby, as shown in FIG. 7, a hole is formed in the cured layer of the resist, and the non-cured layer of the resist is exposed from the cured layer. Therefore, even if the SPM liquid temperature rises from the initial temperature to the peeling temperature and the uncured layer of the resist expands due to vaporization or the like, the resist component moves out of the cured layer through the hole in the cured layer. Therefore, damage to the pattern due to rupture of the hardened layer can be prevented. Furthermore, since the liquid temperature of the SPM increases from the initial temperature to the peeling temperature and the resist peeling ability is increased, the resist whose surface layer is cured can be reliably removed. Thereby, the resist can be removed while preventing damage to the pattern.

  Next, a second hydrogen peroxide solution supply step (step S7 in FIG. 5) for supplying room temperature hydrogen peroxide solution to the substrate W is performed. Specifically, the control device 3 operates in the state where the first chemical nozzle 11 is discharging SPM above the substrate W, that is, in the state where the sulfuric acid valve 19 and the hydrogen peroxide solution valve 24 are opened. 19 is closed. As a result, the supply of sulfuric acid to the first chemical liquid nozzle 11 is stopped, and only the hydrogen peroxide solution at room temperature is discharged from the first chemical liquid nozzle 11 toward the upper surface of the rotating substrate W. When the first chemical liquid nozzle 11 discharges the hydrogen peroxide solution, the control device 3 may stop the hydrogen peroxide solution landing position on the upper surface of the substrate W at the central portion, or the central portion and the periphery. You may move between parts.

  The hydrogen peroxide solution discharged from the first chemical liquid nozzle 11 is deposited on the center of the upper surface of the substrate W covered with SPM. For this reason, the SPM on the substrate W is swept away from the central portion to the periphery thereof. The hydrogen peroxide solution deposited on the center of the upper surface of the substrate W flows outward along the upper surface of the substrate W by centrifugal force. Similarly, the SPM on the substrate W flows outward along the upper surface of the substrate W by centrifugal force. For this reason, the outer edge of the liquid film of the hydrogen peroxide solution having a circular shape in plan view instantly spreads from the center of the substrate W to the periphery of the substrate W, and the SPM on the substrate W is replaced with the hydrogen peroxide solution in a short time. As a result, the SPM is removed from the substrate W.

  Next, the 1st rinse liquid supply process (step S8 of FIG. 5) which supplies the pure water of room temperature which is an example of the rinse liquid to the board | substrate W is performed. Specifically, the control device 3 controls the third nozzle moving device 39 to move the first rinse liquid nozzle 36 from the retracted position to the processing position. Thereafter, the control device 3 opens the first rinse liquid valve 41 and causes the first rinse liquid nozzle 36 to discharge pure water at room temperature toward the center of the upper surface of the substrate W. When a predetermined time elapses after the first rinse liquid valve 41 is opened, the control device 3 closes the first rinse liquid valve 41 and stops the discharge of pure water from the first rinse liquid nozzle 36. Thereafter, the control device 3 controls the third nozzle moving device 39 to retract the first rinse liquid nozzle 36 from above the substrate W.

  The pure water discharged from the first rinse liquid nozzle 36 is deposited on the center of the upper surface of the substrate W covered with the chemical liquid. Therefore, the chemical solution on the substrate W is pushed away from the central portion to the periphery thereof. The pure water that has landed on the center of the upper surface of the substrate W flows outward along the upper surface of the substrate W by centrifugal force. Similarly, the chemical solution on the substrate W flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the outer edge of the liquid film of pure water having a circular shape in plan view instantly spreads from the central portion of the substrate W to the periphery of the substrate W, and the chemical solution on the substrate W is replaced with pure water in a short time. Thereby, the chemical solution on the substrate W is washed away with pure water.

  Next, an SC1 supply process (step S9 in FIG. 5) for supplying SC1 to the substrate W is performed. Specifically, the control device 3 controls the second nozzle moving device 31 to move the second chemical liquid nozzle 29 from the retracted position to the processing position. After the second chemical liquid nozzle 29 is disposed above the substrate W, the control device 3 opens the second chemical liquid valve 34 and discharges SC1 to the second chemical liquid nozzle 29 toward the upper surface of the rotating substrate W. Let In this state, the control device 3 controls the second nozzle moving device 31 to move the SC1 liquid landing position relative to the upper surface of the substrate W between the central portion and the peripheral portion. And when predetermined time passes after the 2nd chemical | medical solution valve 34 opens, the control apparatus 3 will close the 2nd chemical | medical solution valve 34, and will stop discharge of SC1. Thereafter, the control device 3 retracts the second chemical liquid nozzle 29 from above the substrate W by controlling the second nozzle moving device 31.

  SC1 discharged from the second chemical liquid nozzle 29 lands on the upper surface of the substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the pure water on the substrate W is swept away by the SC 1 and discharged around the substrate W. As a result, the pure water liquid film on the substrate W is replaced with the SC1 liquid film covering the entire upper surface of the substrate W. Further, since the controller 3 moves the SC1 liquid landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the SC1 liquid landing position is the substrate W The entire upper surface of the substrate W is scanned. Therefore, SC1 discharged from the second chemical liquid nozzle 29 is supplied to the entire upper surface of the substrate W, and the entire upper surface of the substrate W is processed uniformly.

  Next, a second rinsing liquid supply step (step S10 in FIG. 5) for supplying room temperature pure water, which is an example of the rinsing liquid, to the substrate W is performed. Specifically, the control device 3 controls the third nozzle moving device 39 to move the first rinse liquid nozzle 36 from the retracted position to the processing position. After the first rinsing liquid nozzle 36 is disposed above the substrate W, the control device 3 opens the first rinsing liquid valve 41 so that the first rinsing liquid nozzle 36 is purely directed toward the upper surface of the rotating substrate W. Let water discharge. As a result, the SC1 on the substrate W is washed away by the pure water and discharged around the substrate W. Therefore, the liquid film of SC1 on the substrate W is replaced with a liquid film of pure water that covers the entire upper surface of the substrate W. When a predetermined time elapses after the first rinse liquid valve 41 is opened, the control device 3 closes the first rinse liquid valve 41 and stops the discharge of pure water. Thereafter, the control device 3 retracts the first rinse liquid nozzle 36 from above the substrate W by controlling the first nozzle moving device 13.

  Next, a drying process (step S11 in FIG. 5) for drying the substrate W is performed. Specifically, the control device 3 controls the spin motor 10 to control the spin motor 10 so that the rotation speed is higher than the rotation speed from the charge removal liquid supply process (step S2 in FIG. 5) to the second rinse liquid supply process (step S10 in FIG. The substrate W is accelerated to a large drying rotation speed (for example, several thousand rpm), and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W is started, the control device 3 controls the spin motor 10 to stop the rotation of the substrate W by the spin chuck 5.

  Next, an unloading step (Step S12 in FIG. 5) for unloading the substrate W from the chamber 4 is performed. Specifically, the control device 3 moves each chuck pin 8 from the closed position to the open position, and releases the grip of the substrate W by the spin chuck 5. Thereafter, the control device 3 causes the hand of the substrate transfer robot CR to enter the chamber 4 in a state where all the nozzles and the like are retracted from above the spin chuck 5. Then, the control device 3 holds the substrate W on the spin chuck 5 by the hand of the substrate transport robot CR. Thereafter, the control device 3 retracts the hand of the substrate transport robot CR from the chamber 4. Thereby, the processed substrate W is unloaded from the chamber 4.

  As described above, in this embodiment, SPM is generated by mixing sulfuric acid and hydrogen peroxide solution. Then, the generated SPM is supplied to the substrate W covered with the resist. The surface layer of the resist is hardened by alteration due to ion implantation or dry etching, and the inside of the resist is sealed by a hardened layer located on the surface layer. The mixing ratio of sulfuric acid and hydrogen peroxide water used to generate SPM is changed when SPM is supplied to the substrate W, whereby the temperature of the SPM supplied to the substrate W is changed to the resist. The temperature rises to a peeling temperature suitable for peeling. The hardened layer located on the surface layer of the resist reacts with SPM whose liquid temperature rises. Thereby, a hole connecting the inside and the outside of the resist is formed in the hardened layer in the process of increasing the SPM liquid temperature. Therefore, even if the non-cured layer of the resist is vaporized, the vaporized component is discharged through the hole of the cured layer, so that the internal pressure of the resist is hardly increased. For this reason, resist rupture (hardened layer rupture) is less likely to occur than when the SPM at the peeling temperature is supplied to the substrate W from the beginning. Accordingly, the resist can be removed from the substrate W while suppressing or preventing damage to the pattern arranged in the resist.

  In this embodiment, the substrate W is heated before the SPM is supplied to the substrate W, and the temperature of the substrate W is brought close to the liquid temperature (initial temperature) of the SPM when the supply of the SPM to the substrate W is started. . Therefore, it is possible to suppress or prevent the resist temperature from rapidly rising due to the start of supply of SPM. Therefore, even when the initial temperature of the SPM is high, it is possible to suppress or prevent the internal pressure of the resist from rapidly increasing when the SPM supply starts. Thereby, generation | occurrence | production of the pattern damage resulting from the rupture of a resist can be suppressed or prevented.

  In the present embodiment, the neutralizing liquid that conducts electricity is supplied to the substrate W before the SPM is supplied to the substrate W. Therefore, when the substrate W is charged, the charge moves from the substrate W to the charge removal liquid, and the charge is removed from the substrate W. In particular, since the specific resistance of the static elimination liquid is larger than the specific resistance of the SPM, the electric charge slowly moves from the substrate W to the static elimination liquid. Therefore, it is possible to prevent damage to the device formed on the substrate W due to heat generation or discharge due to a rapid charge movement. Thereby, the fall of the quality of the board | substrate W can be suppressed or prevented.

  In this embodiment, the hydrogen peroxide solution is supplied to the substrate W after the charge eliminating solution is supplied to the substrate W. Thereafter, SPM is supplied to the substrate W. The static elimination liquid remaining on the substrate W is removed from the substrate W by supplying hydrogen peroxide water. Accordingly, the SPM is supplied to the substrate W in a state where the remaining amount of the charge removal liquid is reduced. The neutralizing solution and SPM are generally highly reactive. Therefore, it is possible to suppress or prevent the SPM from being excessively heated. Moreover, it can suppress or prevent that SPM and a static elimination liquid mix only in the one part area | region of the board | substrate W, and the uniformity of the density | concentration of SPM falls. Thereby, the fall of the quality of the board | substrate W can be suppressed or prevented.

  Further, in the present embodiment, after the charge removal liquid is supplied to the substrate W, hydrogen peroxide solution having a temperature lower than the initial temperature of the SPM (the temperature of the SPM when the supply of the SPM to the substrate W is started) is added to the substrate W. To be supplied. Then, the substrate W is heated when the hydrogen peroxide solution is held on the substrate W, and the temperature of the substrate W is brought close to the initial temperature of the SPM. Therefore, it is possible to suppress or prevent the resist temperature from rapidly rising due to the start of supply of SPM. Thereby, generation | occurrence | production of the pattern damage resulting from the rupture of a resist can be suppressed or prevented.

Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications can be made within the scope of the claims.
For example, in the above-described embodiment, the case where the substrate W is heated by the infrared heater 58 before the SPM supply process has been described, but the heating process may be omitted.
In the above-described embodiment, the case where carbonated water, which is an example of a static elimination liquid, is supplied to the substrate W before the SPM supply process has been described, but the static elimination liquid supply process may be omitted. In this case, in addition to the charge removal liquid supply process, the first hydrogen peroxide solution supply process for removing the charge removal liquid from the substrate W before the SPM supply process may be omitted.

In the above-described embodiment, the case where the SPM and the hydrogen peroxide solution are discharged from the common nozzle (the first chemical solution nozzle 11) has been described, but the SPM and the hydrogen peroxide solution may be discharged from separate nozzles. Good.
In the above-described embodiment, the case where the SPM is supplied to the substrate W in a state where the heating of the substrate W by the infrared heater 58 is stopped has been described. However, in the state where the SPM is held on the substrate W, The substrate W may be heated by the infrared heater 58. The heating device for heating the substrate W is not limited to the infrared heater 58 but may be an electric heater including a heating wire.

  In the above-described embodiment, the case where the entire upper surface of the substrate W is covered with the SPM liquid film while the SPM is discharged to the first chemical liquid nozzle 11 has been described. After the mixing ratio reaches the peeling mixing ratio, the substrate W is rotated at a low speed (for example, 1 to 30 rpm), or the rotation of the substrate W is stopped and the discharge of SPM from the first chemical nozzle 11 is stopped. Thus, the SPM liquid film covering the entire upper surface of the substrate W may be held on the substrate W in a state where the discharge of the SPM is stopped.

  In the above-described embodiment, the case where the discharge of SPM in the SPM supply process (step S5 in FIG. 5) is started in a state where the heating of the substrate W or the like by the infrared heater 58 is stopped has been described. During the supply process, heating of the substrate W or the like by the infrared heater 58 may be started (resumed). Specifically, although the SPM temperature is relatively low at the initial stage of the SPM supply process, the SPM temperature then rises. For example, even when the heating of the substrate W or the like by the infrared heater 58 is started from the latter half of the SPM supply process. Good.

Further, in the above-described embodiment, the case where the spin chuck 5 is a sandwich type chuck including a plurality of chuck pins 8 has been described. However, the spin chuck 5 is formed on the upper surface of the spin base 7 (adsorption base). It may be a vacuum chuck that attracts the lower surface (back surface).
Moreover, although the above-mentioned embodiment demonstrated the case where the 1st chemical | medical solution nozzle 11 and the 2nd chemical | medical solution nozzle 29 were attached to a separate nozzle arm, you may attach to the common nozzle arm. Similarly, the infrared heater 58 may be attached to a common arm with the processing liquid nozzle that discharges the processing liquid such as the first chemical liquid nozzle 11. Moreover, although the case where the 1st rinse liquid nozzle 36 and the 2nd rinse liquid nozzle 37 were attached to the common nozzle arm was demonstrated, you may attach to a separate nozzle arm.

In the above-described embodiment, the case where the substrate processing apparatus 1 is an apparatus that processes a disk-shaped substrate has been described. However, the substrate processing apparatus 1 processes a polygonal substrate such as a substrate for a liquid crystal display device. It may be a device that performs.
In addition, various design changes can be made within the scope of matters described in the claims.

1: substrate processing device 3: control device 5: spin chuck 11: first chemical solution nozzle 15: stirring pipe 16: mixing valve 17: sulfuric acid tank 19: sulfuric acid valve 20: sulfuric acid flow rate adjusting valve 21: first heater 22: peroxidation Hydrogen water tank 24: Hydrogen peroxide water valve 25: Hydrogen peroxide water flow rate adjusting valve 36: First rinse liquid nozzle 37: Second rinse liquid nozzle 58: Infrared heater

Claims (10)

A method of removing the resist from a substrate in which a pattern is arranged in a resist whose surface layer is cured,
An SPM supplying step of supplying an SPM generated by mixing sulfuric acid and hydrogen peroxide solution to a substrate;
A liquid temperature increasing step for increasing the liquid temperature of the SPM supplied to the substrate in the SPM supplying step by changing the mixing ratio of sulfuric acid and hydrogen peroxide used for generating the SPM in parallel with the SPM supplying step. And a substrate processing method.   The substrate processing method according to claim 1, further comprising a heating step of heating the substrate to bring the temperature of the substrate closer to the SPM liquid temperature at the start of the liquid temperature raising step before the SPM supply step.   3. The substrate processing method according to claim 1, further comprising a discharging solution supplying step of supplying a conductive discharging solution having a specific resistance larger than that of the SPM to the substrate before the SPM supplying step.   The method further includes a hydrogen peroxide solution supplying step of washing away the charge eliminating solution remaining on the substrate by supplying hydrogen peroxide solution to the substrate after the neutralizing solution supplying step and before the SPM supplying step. Item 4. The substrate processing method according to Item 3. The hydrogen peroxide solution supply step is a step of supplying a hydrogen peroxide solution having a temperature lower than the liquid temperature of the SPM at the start of the liquid temperature increasing step to the substrate.
In the substrate processing method, in parallel with the hydrogen peroxide solution supplying step, the substrate temperature is changed to the SPM liquid temperature at the start of the liquid temperature increasing step by heating the substrate and the hydrogen peroxide solution on the substrate. The substrate processing method according to claim 4, further comprising a heating step of approaching. An apparatus for removing the resist from a substrate in which a pattern is arranged in a resist whose surface layer is cured,
SPM generating means for generating SPM by mixing sulfuric acid and hydrogen peroxide water;
SPM supply means for supplying the SPM generated by the SPM generation means to the substrate;
A mixing ratio changing means for changing the mixing ratio of sulfuric acid and hydrogen peroxide used in the generation of SPM;
A controller for controlling the SPM generating means, the SPM supplying means, and the mixing ratio changing means,
The controller is
An SPM supply step of supplying SPM generated by mixing sulfuric acid and hydrogen peroxide water to the SPM generation means to the substrate;
By changing the mixing ratio changing means to the mixing ratio changing means in parallel with the SPM supplying step, the liquid temperature of the SPM supplied to the substrate in the SPM supplying step is changed. A substrate processing apparatus that executes a liquid temperature raising step for raising the temperature. The substrate processing apparatus further includes a heating means for heating the substrate,
The controller is
The heating step of causing the heating means to heat the substrate prior to the SPM supply step so as to bring the substrate temperature closer to the SPM liquid temperature at the start of the liquid temperature raising step is performed. Substrate processing equipment. The substrate processing apparatus further includes a discharging solution supplying means for supplying a conductive discharging solution having a specific resistance larger than that of the SPM to the substrate,
The controller is
The substrate processing according to claim 6 or 7, further comprising: before the SPM supplying step, a discharging solution supplying step of supplying a conductive discharging solution having a specific resistance higher than that of the SPM to the discharging solution supplying unit to the substrate. apparatus. The substrate processing apparatus further includes hydrogen peroxide solution supply means for supplying hydrogen peroxide solution to the substrate,
The controller is
Hydrogen peroxide that is washed away from the neutralization solution remaining on the substrate by supplying the hydrogen peroxide solution to the substrate by the hydrogen peroxide solution supply means after the neutralization solution supply step and before the SPM supply step. The substrate processing apparatus according to claim 8, further performing a water supply step. The substrate processing apparatus further includes a heating means for heating the substrate,
The hydrogen peroxide solution supply means supplies hydrogen peroxide solution having a temperature lower than the SPM solution temperature to the substrate at the start of the solution temperature raising step.
The controller is
In parallel with the hydrogen peroxide solution supply step, the substrate and the hydrogen peroxide solution on the substrate are heated by the heating means, thereby bringing the substrate temperature close to the SPM solution temperature at the start of the solution temperature raising step. The substrate processing apparatus according to claim 9, further performing a heating step.

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