JP2015070208A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent pattern collapse while drying a substrate by replacing the cleaning solution on the substrate surface to a volatile solvent reliably, and to enhance the productivity of such a substrate.SOLUTION: A substrate processing apparatus 10 is configured so that the cleaning solution recovery section 102 of a drainage collection cup 100 opens wide the cleaning solution collection hole 102A when collecting the cleaning solution, and makes the cleaning solution collection hole 102A like a small gap labyrinth after collecting the cleaning solution.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

  A substrate processing apparatus supplies a processing liquid to the surface of a substrate such as a wafer or a liquid crystal substrate in a manufacturing process of a semiconductor or the like to process the substrate surface, and then supplies a cleaning liquid such as ultrapure water to the substrate surface. This is an apparatus for cleaning the substrate surface and further drying it. In this drying process, there is a problem that, for example, a pattern around a memory cell on a substrate and a gate collapses due to miniaturization associated with high integration and high capacity of a semiconductor in recent years. This is due to the spacing and structure between patterns, the surface tension of the cleaning liquid, and the like. When the patterns are attracted to each other due to the surface tension of the cleaning liquid remaining between the patterns when the substrate is dried, the patterns collapse elastically and cause pattern collapse.

  Therefore, a substrate drying method using IPA (2-propanol: isopropyl alcohol) whose surface tension is smaller than that of ultrapure water has been proposed for the purpose of suppressing the above-described pattern collapse (see, for example, Patent Document 1). ), A method of drying the substrate by substituting the ultrapure water on the substrate surface with IPA is used in a mass production factory or the like.

  In the substrate processing apparatuses described in Patent Documents 1 and 2, when the chemical solution or cleaning water supplied to the surface of the substrate is shaken off by the centrifugal force accompanying the rotation of the substrate, the chemical solution or cleaning water is removed. A drainage recovery cup is used that makes it possible to separate and recover the components.

JP 2008-34779 JP 2003-297801 A

  However, in the prior art, it is difficult to sufficiently replace the cleaning liquid supplied to the surface of the substrate with a volatile solvent such as IPA having a low surface tension, and pattern collapse when the substrate is dried cannot be effectively prevented. This pattern collapse becomes prominent as semiconductors become finer.

  In addition, in the substrate processing apparatuses described in Patent Documents 1 and 2, the cleaning water that is spun off from the surface of the substrate is once collected in the drainage recovery cup, and in the process of supplying IPA to the substrate, There is a possibility that the cleaning water or the water vapor recovered in the recovery cup may return to the substrate side. The cleaning water or its water vapor that has returned to the substrate side in this way reattaches to the surface of the substrate, or is adsorbed by the IPA present on the surface of the substrate, so that the cleaning water on the surface of the substrate can be quickly transferred to the IPA. Inhibits substitution.

  Thus, unless the cleaning liquid supplied to the surface of the substrate is sufficiently replaced by a volatile solvent such as IPA having a low surface tension, pattern collapse during drying of the substrate cannot be effectively prevented.

  In addition, with the increase in size of substrates such as wafers and liquid crystal substrates, the working time for cleaning the substrate surface and further drying it tends to be long, and improvement in substrate productivity is required.

  An object of the present invention is to reliably replace the cleaning liquid on the substrate surface with a volatile solvent to effectively prevent pattern collapse during drying of the substrate and improve the productivity of such a substrate.

  A substrate processing apparatus according to the present invention has a substrate cleaning chamber and a substrate drying chamber, and the substrate cleaning chamber has a rotating table on which the substrate is placed and rotated, and a cleaning liquid supply unit that supplies the cleaning liquid to the surface of the substrate. And a solvent supply unit that supplies a volatile solvent to the surface of the substrate supplied with the cleaning liquid and replaces the cleaning liquid on the surface of the substrate with the volatile solvent. The substrate drying chamber is volatile in the substrate cleaning chamber. Substrate processing apparatus comprising heating and drying means for heating a substrate supplied with a reactive solvent, removing liquid balls of volatile solvent generated on the surface of the substrate by a heating action, and drying the surface of the substrate The substrate cleaning chamber is provided with a drain recovery cup surrounding the rotary table, and the drain recovery cup is provided with a cleaning liquid recovery port for recovering the cleaning liquid scattered from the substrate rotating with the rotary table. With collection part and turntable And a solvent recovery part with a solvent recovery port that recovers volatile solvent that scatters from the rotating substrate, and the cleaning liquid recovery part of the drainage recovery cup opens the cleaning liquid recovery port at the time of recovery of the cleaning liquid to recover the cleaning liquid. Later, the cleaning liquid recovery port is configured as a labyrinth-like small gap.

  A substrate processing method according to the present invention is a substrate processing method using a substrate cleaning chamber and a substrate drying chamber, wherein in the substrate cleaning chamber, a step of supplying a cleaning liquid to the surface of the substrate, and a substrate supplied with the cleaning liquid A volatile solvent is supplied to the surface of the substrate, and the cleaning liquid on the surface of the substrate is replaced with a volatile solvent. In the substrate drying chamber, the substrate supplied with the volatile solvent is heated in the substrate cleaning chamber and heated. The substrate processing method includes a step of removing the liquid balls of the volatile solvent generated on the surface of the substrate and drying the surface of the substrate. In the step of supplying the cleaning liquid to the surface of the substrate, the substrate is rotated from the rotating substrate. In the process of recovering the scattered cleaning liquid from the cleaning liquid recovery port of the cleaning liquid recovery unit and supplying the volatile solvent to the surface of the substrate, the volatile solvent scattered from the rotating substrate is recovered by the solvent recovery port of the solvent recovery unit. Yes, wash During recovery of the liquid wide open washing liquid recovery port of the cleaning liquid recovery section, after the recovery of the cleaning liquid is obtained by such a labyrinth-like small gap the cleaning liquid recovery port.

  According to the substrate processing apparatus and the substrate processing method of the present invention, the cleaning liquid on the surface of the substrate is surely replaced with a volatile solvent to effectively prevent pattern collapse during drying of the substrate and improve the productivity of such a substrate. can do.

FIG. 1 is a schematic view showing a substrate processing apparatus. FIG. 2 is a schematic diagram showing the configuration of the substrate cleaning chamber in the substrate processing apparatus. FIG. 3 is a cross-sectional view of the main part showing the drainage recovery cup. FIG. 4 is a schematic diagram showing the configuration of the substrate drying chamber in the substrate processing apparatus. FIG. 5 is a schematic diagram showing the configuration of the transfer means in the substrate processing apparatus. FIG. 6 is a schematic diagram showing a method for preventing liquid splashing in the cleaning liquid recovery unit. FIG. 7 is a schematic diagram showing the configuration of the substrate cleaning chamber in which the drainage recovery cup is modified. FIG. 8 is a cross-sectional view of the main part showing a modified example of the drainage recovery cup. FIG. 9 is a schematic diagram showing a method for preventing liquid splashing in the cleaning liquid recovery unit. FIG. 10 is a schematic diagram showing the configuration of the substrate cleaning chamber in which the drainage recovery cup is deformed. FIG. 11 is a cross-sectional view of an essential part showing a modified example of the drainage recovery cup. FIG. 12 is a schematic view showing a drying state of the volatile solvent on the substrate surface.

  As shown in FIG. 1, the substrate treatment apparatus 10 includes a substrate supply / discharge unit 20, a substrate storage buffer unit 30, and a plurality of substrate processing chambers 40, and the substrate supply / discharge unit 20 and the substrate storage buffer unit 30. The transfer robot 11 is provided between the substrate storage buffer unit 30 and the substrate processing chamber 40. Here, the substrate processing chamber 40 includes a set of a substrate cleaning chamber 50 and a substrate drying chamber 70 as described later.

  The substrate supply / discharge unit 20 can carry in and out a plurality of substrate storage cassettes 21. The substrate storage cassette 21 stores a plurality of substrates W such as unprocessed wafers and liquid crystal substrates and carries them into the substrate supply / discharge unit 20, and stores the substrates W processed in the substrate processing chamber 40. It is carried out from the discharge part 20. Unprocessed substrates W are sequentially taken out from the storage shelves in multiple stages in the substrate storage cassette 21 in the substrate supply / discharge unit 20 by the transfer robot 11 and supplied to an in-dedicated buffer 31 (to be described later) of the substrate storage buffer unit 30. Further, the substrate is taken out from the in-dedicated buffer 31 of the substrate storage buffer unit 30 by the transfer robot 12 and supplied to the substrate cleaning chamber 50 of the substrate processing chamber 40 for cleaning. The substrate W cleaned in the substrate cleaning chamber 50 is transferred from the substrate cleaning chamber 50 to the substrate drying chamber 70 by the transport robot 12 and dried. The processed substrate W is taken out from the substrate drying chamber 70 by the transfer robot 12 and is put into an out-only buffer 32 (to be described later) of the substrate storage buffer unit 30 to be temporarily stored. The substrates W temporarily stored in the out-only buffer 32 of the substrate storage buffer unit 30 are taken out by the transport robot 11 and sequentially discharged to an empty storage shelf of the substrate storage cassette 21 in the substrate supply / discharge unit 20. The substrate storage cassette 21 filled with the processed substrates W is unloaded from the substrate supply / discharge unit 20.

  As shown in FIG. 5, the substrate storage buffer unit 30 is provided with a plurality of in-dedicated buffers 31 for storing unprocessed substrates W in a multi-tiered shelf shape and cleaned and dried in the substrate processing chamber 40. A plurality of out-only buffers 32 for storing the substrates W are provided in a multi-tiered shelf shape. A cooling means for cooling the substrate W being temporarily stored can be provided inside the out-only buffer 32. The in-dedicated buffer 31 and the out-dedicated buffer 32 do not have to be multistage.

  The substrate processing chamber 40 includes a substrate cleaning chamber 50 and a substrate drying chamber 70 that form a set around the transfer robot 12 located at the moving end near the substrate processing chamber 40 (or both sides). The substrate W cleaned at 50 is transferred to the same substrate drying chamber 70 and dried. In the substrate processing chamber 40, when the cleaning operation time in the substrate cleaning chamber 50 is N, and the drying operation time in the substrate drying chamber 70 is 1, each of the substrate cleaning chamber 50 and the substrate drying chamber 70 forming a set The number of installations i and j is set so that i to j = N to 1. Accordingly, when all the substrate cleaning chambers 50 and the substrate drying chamber 70 forming a set in the substrate processing chamber 40 are operated in parallel in the same time zone, the subsequent substrates W are cleaned in those substrate cleaning chambers 50. The production amount and the production amount for drying the preceding substrate W that has been cleaned in the substrate cleaning chamber 50 in the substrate drying chamber 70 are substantially equalized.

  In the substrate processing chamber 40 of this embodiment, a substrate cleaning chamber 50 and a substrate drying chamber 70 that form a set in each of a plurality of levels, for example, three levels, are arranged, and the cleaning operation time in the substrate cleaning chamber 50 is N = 3. In this case, since the drying operation time in the substrate drying chamber 70 is 1, i = 3 substrate cleaning chambers 50 and j = 1 substrate drying chambers 70 are installed in each level.

Hereinafter, the substrate cleaning chamber 50 and the substrate drying chamber 70 constituting the substrate processing chamber 40 will be described in detail.
As shown in FIG. 2, the substrate cleaning chamber 50 includes a processing box 51 serving as a processing chamber, a table 53 that supports the substrate W in a horizontal state in the processing box 51, and a rotating mechanism that rotates the table 53 in a horizontal plane. 54. Further, the substrate cleaning chamber 50 includes a chemical solution supply unit 56 that supplies a cleaning solution to the surface of the substrate W on the table 53 and a cleaning solution supply unit 57 that supplies the cleaning solution to the surface of the substrate W on the table 53. And a solvent supply unit 58 for supplying a volatile solvent. The substrate cleaning chamber 50 includes an atmosphere gas supply unit 59 and a control unit 60 that controls each unit.

  In the processing box 51, a substrate loading / unloading port 51A is opened in a part of the peripheral wall. The substrate loading / unloading port 51A is opened and closed by a shutter 51B.

  The table 53 is positioned near the center inside the processing box 51, and is provided so as to be rotatable in a horizontal plane. The table 53 has a plurality of support members 53A such as pins, and these support members 53A hold a substrate W such as a wafer or a liquid crystal substrate in a detachable manner.

  The rotating mechanism 54 includes a rotating shaft coupled to the table 53 and a motor (none of which is shown) that serves as a driving source for rotating the rotating shaft. The table 53 is driven by the motor via the rotating shaft. Rotate. The rotation mechanism 54 is electrically connected to the control unit 60, and the driving thereof is controlled by the control unit 60.

  The cleaning arm 55 extends horizontally from a turning portion 55B provided at the upper end portion of a support shaft 55A provided upright on the outer peripheral side in the processing box 51, and a chemical solution supply unit 56, a cleaning solution supply unit 57, Each nozzle 56A, 57A, 58A of the solvent supply unit 58 is provided. The cleaning arm 55 is swung by driving the swivel unit 55B to move the nozzles 56A to 58A within the upper region of the substrate W on the table 53, so that the liquid supply position from the nozzles 56A to 58A to the surface of the substrate W is changed. The nozzles 56 </ b> A to 58 </ b> A can be positioned at a standby position outside the upper region of the substrate W while allowing scanning.

  The chemical solution supply unit 56 has a nozzle 56A that discharges the chemical solution from above on the surface of the substrate W on the table 53, and a chemical solution, for example, a resist stripping process is applied to the surface of the substrate W on the table 53 from the nozzle 56A. APM (a mixture of ammonia water and hydrogen peroxide solution) is supplied. The chemical solution supply unit 56 is electrically connected to the control unit 60, and the driving thereof is controlled by the control unit 60. The chemical solution supply unit 56 includes a tank that stores the chemical solution, a pump that is a drive source, a valve that is an adjustment valve that adjusts the supply amount (none of which is shown), and the like.

  The cleaning liquid supply unit 57 has a nozzle 57A that discharges the cleaning liquid from above to the surface of the substrate W on the table 53. The cleaning liquid, for example, for cleaning processing is applied to the surface of the substrate W on the table 53 from the nozzle 57A. Of pure water (ultra pure water). The cleaning liquid supply unit 57 is electrically connected to the control unit 60, and its driving is controlled by the control unit 60. The cleaning liquid supply unit 57 includes a tank that stores the cleaning liquid, a pump that serves as a driving source, and a valve (none of which is shown) that serves as an adjustment valve that adjusts the supply amount.

  The solvent supply unit 58 has a nozzle 58 </ b> A that discharges a volatile solvent from above to the surface of the substrate W on the table 53, and a volatile solvent from the nozzle 58 </ b> A to the surface of the substrate W on the table 53. For example, IPA is supplied. The solvent supply unit 58 supplies a volatile solvent to the surface of the substrate W cleaned with the cleaning solution supplied by the cleaning solution supply unit 57, and replaces the cleaning solution on the surface of the substrate W with a volatile solvent. The solvent supply unit 58 is electrically connected to the control unit 60, and the driving thereof is controlled by the control unit 60. The solvent supply unit 58 includes a tank that stores a volatile solvent, a pump that is a driving source, a valve that is an adjustment valve that adjusts the supply amount (none of which is shown), and the like.

  Here, in addition to IPA, for example, monovalent alcohols such as ethanol, ethers such as diethyl ether and ethyl methyl ether, ethylene carbonate, and the like can be used as the volatile solvent. .

  The substrate cleaning chamber 50 further includes a drainage recovery cup 100 that surrounds the table 53 inside the processing box 51.

  In the drainage recovery cup 100, a cup body 110, a first movable wall 120, and a second movable wall 130 that are concentric around the table 53 are sequentially arranged from the outside. The cup body 110 has a large-diameter annular wall 111 erected on the floor surface of the processing box 51, the diameter of the annular wall 111 is reduced obliquely upward toward the inside, and the substrate W on the table 53 is moved upward. It is open to be exposed toward The first movable wall 120 supports a medium-diameter annular wall 121 on an elevating part 122 provided on the floor surface of the processing box 51, and reduces the diameter of the annular wall 121 obliquely upward toward the inside. The substrate 53 on the table 53 is opened so as to be exposed upward. The second movable wall 130 supports a small-diameter annular wall 131 on an elevating part 132 provided on the floor surface of the processing box 51, projects the upper part of the annular wall 131 upward, and moves the substrate W on the table 53 upward. It is open to be exposed toward

  The drainage recovery cup 100 is shaken off from the substrate W rotating together with the table 53 and removed from the substrate W rotating together with the table 53. A solvent recovery unit 102 having a cleaning liquid recovery part 102 having a cleaning liquid recovery port 102A for recovering a scattered cleaning liquid, and a solvent recovery port 103A for recovering a volatile solvent that has been shaken off from the substrate W rotating together with the table 53 and scattered. And have.

  In the chemical liquid recovery unit 101, a chemical liquid recovery path 101 </ b> B is formed by an annular gap between the annular wall 111 of the cup body 110 and the annular wall 121 of the first movable wall 120, and an upper end portion of the annular wall 111 and an upper end portion of the annular wall 121. Form a chemical solution recovery port 101A opposite to each other.

  In the cleaning liquid recovery unit 102, a cleaning liquid recovery path 102 </ b> B is formed by the annular gap between the annular wall 121 of the first movable wall 120 and the annular wall 131 of the second movable wall 130, and the upper end of the annular wall 121 and the annular wall 131 A cleaning liquid recovery port 102A is formed so as to be opposed to each other from the upper end. At this time, as shown in FIG. 3, a downward lip 121 </ b> L having a stepped lower surface is formed at the upper end of the annular wall 121 in the first movable wall 120, and a staircase is formed at the upper end of the annular wall 131 in the second movable wall 130. An upward lip 131L having an upper surface is formed. As a result, when the downward lip 121L of the first movable wall 120 and the upward lip 131L of the second movable wall 130 are close to each other in the vertical direction, the lip 121L and 131L form a cleaning liquid recovery port formed between them. Let 102A be a labyrinth-like small gap G. Further, the downward lip 121L of the first movable wall 120 and the upward lip 131L of the second movable wall 130 are formed in a protruding piece shape protruding inward of the cleaning liquid recovery path 102B.

  In the solvent recovery unit 103, a solvent recovery path 103 </ b> B is formed by an annular gap formed between the annular wall 131 of the second movable wall 130 and the table 53, and the upper end of the annular wall 131 is between the outer periphery of the table 53. A solvent recovery port 103A is formed.

  In the drainage recovery cup 100, the recovery paths 101B, 102B, and 103B of the recovery units 101, 102, and 103 are connected to an exhaust pump (not shown) via gas-liquid separators. As a result, the liquids supplied to the surface of the substrate W by each of the supply units 56, 57, and 58 and the vapors of those liquids generated in the upper space of the substrate W are passed through the recovery ports 101A, 102A, and 103A to the following i to iii. Separate and collect as follows.

i. At the time of recovery of the chemical solution When the chemical solution supplied from the chemical solution supply unit 56 scatters from the rotating substrate W, the controller 60 positions the annular wall 121 at the lower end by the elevating unit 122, and sets the chemical solution recovery port 101 </ b> A on the table 53. A large opening around the substrate W.

  As a result, the chemical liquid supplied to the surface of the substrate W by the chemical liquid supply unit 56 and the vapor thereof are collected in the widely opened chemical liquid recovery port 101A and recovered from the chemical liquid recovery path 101B.

ii. At the time of recovery of the cleaning liquid after the recovery of the chemical liquid When the cleaning liquid supplied from the cleaning liquid supply unit 57 scatters from the rotating substrate W, the control unit 60 keeps the annular wall 131 positioned at the lower end by the elevating unit 132. The annular wall 121 is positioned at the rising end by the elevating unit 122, the chemical solution recovery port 101A is made a small opening, and the cleaning solution recovery port 102A is largely opened around the substrate W on the table 53.

  This prevents the expensive chemical solution that has been rotated and rotated or attached to the inside of the chemical solution recovery path 101B and the vapor thereof from returning to the inside of the processing box 51 due to the small opening of the chemical solution recovery port 101A. Is done.

  Then, the cleaning liquid supplied to the surface of the substrate W by the cleaning liquid supply unit 57, for example, ultrapure water and its water vapor, are recovered in the cleaning liquid recovery port 102A having a large opening and recovered from the cleaning liquid recovery path 102B.

  It is preferable to provide a liquid splash preventing mechanism 200 that rotates the annular wall 121 of the first movable wall 120 surrounding the table 53 (the substrate W on the table 53) of the cleaning liquid recovery unit 102 around the table 53 during the recovery of the cleaning liquid. . For example, as shown in FIG. 6, the liquid splash repelling prevention mechanism 200 includes an elevating / rotating unit 201 that replaces the elevating unit 122 described above. As shown in FIGS. 6A and 6B, the liquid splash prevention mechanism 200 is a first movable wall having a bottomed cylindrical body as shown in FIG. 6B as viewed from the direction of the arrow B in FIG. 120, the rotating shaft 53B of the table 53 is inserted into the central hole of the bottom 120A of the first movable wall 120, and the upper end roller 201B of the lifting shaft 201A of the lifting / lowering rotating unit 201 standing at a plurality of positions around the rotating shaft 53B. The bottom 120A of the first movable wall 120 is supported from below. The liquid splash prevention mechanism 200 separates the bottom 120A of the first movable wall 120 supported by the upper end roller 201B from below when the lifting shaft 201A is lowered from the annular flange 53C provided on the outer periphery of the rotating shaft 53B of the table 53, and moves up and down. When the shaft 201A is raised, the bottom 120A of the first movable wall 120 supported by the upper end roller 201B from below is brought into contact with and pressed against an annular flange 53C provided on the outer periphery of the rotation shaft 53B of the table 53, and the rotational force of the rotation shaft 53B is increased. Transmission to the first movable wall 120 is enabled. Accordingly, the liquid splash preventing mechanism 200 positions the annular wall 121 of the first movable wall 120 at the rising end when the lifting shaft 201A is lifted, and opens the cleaning liquid recovery port 102A largely around the substrate W on the table 53. In addition, the bottom 120 </ b> A and the annular wall 121 of the first movable wall 120 are rotated around the table 53 together with the table 53.

  According to this, as shown in FIG. 6C (in FIG. 6C, N1 indicates the rotation direction of the substrate W, N2 indicates the rotation direction of the first movable wall 120, and K indicates the spraying direction of the cleaning liquid). The cleaning liquid splashed from the substrate W to be collided with the wall surface of the annular wall 121 through the cleaning liquid recovery port 102A does not bounce off the wall surface of the annular wall 121 toward the table 53 and the substrate W side, and rotates on the rotating annular wall 121. Along with the movement of the wall surface, it is accompanied in the circumferential direction (arrow in FIG. 6C). Therefore, the cleaning liquid, for example, ultrapure water that has reached the wall surface of the annular wall 121 from the cleaning liquid recovery port 102A of the cleaning liquid recovery unit 102 is prevented from bouncing back from the wall surface of the annular wall 121 and returning to the inside of the processing box 51.

  In the liquid splash preventing mechanism 200, the rotational force that rotates the annular wall 121 of the first movable wall 120 may be applied from a system different from the rotational force of the table 53.

iii. After collecting the cleaning liquid, when collecting the volatile solvent When the volatile solvent supplied from the solvent supply unit 58 scatters from the rotating substrate W, the control unit 60 positions the annular wall 121 at the rising end by the elevating unit 122. The annular wall 131 is positioned at the ascending end by the elevating unit 132, the chemical solution recovery port 101A is made smaller than that at the time of the chemical solution recovery, the cleaning solution recovery port 102A is made a labyrinth-like small gap, and the solvent recovery port 103A is From the standby position below the table surface, it is positioned at a work position facing the periphery of the substrate W on the table 53.

  This prevents the expensive chemical solution collected in i. Above and attached or floating inside the chemical solution recovery path 101B and its vapor from returning to the inside of the processing box 51.

  In addition, the cleaning liquid recovered in the above-mentioned ii. And adhering to or floating on the inner surface of the cleaning liquid recovery path 102B, for example, ultrapure water and its water vapor return to the inside of the processing box 51. The presence of a labyrinth-like small gap in the cleaning liquid recovery port 102A by the upward lip 131L of the lip 121L and the second movable wall 130, and the lips 121L and 131L have a protruding piece shape protruding inward of the cleaning liquid recovery path 102B. Is surely prevented.

  Then, the volatile solvent, for example IPA, supplied to the surface of the substrate W by the solvent supply unit 58 is recovered in the solvent recovery port 103A having a large opening and recovered from the solvent recovery path 103B.

  The atmosphere gas supply unit 59 makes the space between the surface of the substrate W on the table 53 in the processing box 51 an inert gas atmosphere, for example, a nitrogen gas atmosphere, and the inside of the processing box 51 purged by the inert gas. Water vapor or the like in the atmosphere is sucked and exhausted to the outside by an exhaust pipe (not shown) provided on the floor surface of the processing box 51 or the like. The atmospheric gas supply unit 59 is electrically connected to the control unit 60, and its driving is controlled by the control unit 60.

  The control unit 60 includes a microcomputer that centrally controls each unit and a storage unit that stores substrate processing information and various programs related to substrate processing. This control unit 60 is based on the substrate processing information and various programs, and includes a rotation mechanism 54, a cleaning arm 55, a chemical solution supply unit 56, a cleaning solution supply unit 57, a solvent supply unit 58, an atmospheric gas supply unit 59, a drainage recovery cup 100, and the like. And controlling the supply of the chemical solution by the chemical solution supply unit 56, the supply of the cleaning solution by the cleaning solution supply unit 57, the supply of the volatile solvent by the solvent supply unit 58, etc. to the surface of the substrate W on the rotating table 53. Do.

  As shown in FIG. 4, the substrate drying chamber 70 includes a processing box 71 serving as a processing chamber, a cup 72 provided in the processing box 71, and a table 73 that supports the substrate W in a horizontal state in the cup 72. , A rotating mechanism 74 that rotates the table 73 in a horizontal plane, a gas supply unit 75 that supplies gas, a heating unit 76 that heats the substrate W supplied with a volatile solvent, and a substrate heated by the heating unit 76 A suction drying unit 77 for drying the surface of W and a control unit 80 for controlling each unit are provided.

  The processing box 71, the cup 72, the table 73, and the rotating mechanism 74 are the same as the processing box 51, the drainage recovery cup 100, the table 53, and the rotating mechanism 54 in the substrate cleaning chamber 50. In FIG. 3, 71A denotes a substrate loading / unloading port, 71B denotes a shutter, and 73A denotes a support member such as a pin.

  The gas supply unit 75 includes a nozzle 75A that discharges gas from an oblique direction with respect to the surface of the substrate W on the table 73. A gas, for example, nitrogen gas, is supplied from the nozzle 75A to the surface of the substrate W on the table 73. And a space on the surface of the substrate W in the processing box 71 is made a nitrogen gas atmosphere. The nozzle 75A is mounted on the upper part of the peripheral wall of the cup 72, and its angle, discharge flow rate, and the like are adjusted so that gas is supplied near the center of the surface of the substrate W. The gas supply unit 75 is electrically connected to the control unit 80, and its driving is controlled by the control unit 80. The gas supply unit 75 includes a tank that stores gas, a valve that is an adjustment valve that adjusts the supply amount (none of which is shown), and the like.

  Here, as the gas to be supplied, an inert gas other than nitrogen gas, for example, argon gas, carbon dioxide gas, helium gas, or the like can be used. Since this inert gas is supplied to the surface of the substrate W, oxygen on the surface of the substrate W can be removed, and generation of a watermark (water stain) can be prevented.

  The heating means 76 has a plurality of lamps 76A, is provided above the table 73, and irradiates the surface of the substrate W on the table 73 with light when each lamp 76A is turned on. The heating unit 76 is configured to be movable in the vertical direction (up and down direction) by the moving mechanism 76B, and an irradiation position close to the cup 72 (a position close to the surface of the substrate W as indicated by a solid line in FIG. 4). ) And a standby position separated from the cup 72 by a predetermined distance (a position separated from the surface of the substrate W as indicated by a one-dot chain line in FIG. 4). The heating unit 76 is electrically connected to the control unit 80, and its driving is controlled by the control unit 80.

  Here, as the heating means 76, for example, a plurality of straight tube type lamps 76A provided in parallel or a plurality of light bulb type lamps 76A provided in an array can be used. As the lamp 76A, for example, a halogen lamp or a xenon flash lamp can be used.

  In the heating process of the substrate W using the heating means 76, the volatile solvent liquid A1 that is in contact with the pattern P on the surface of the substrate W as shown in FIG. Starts to vaporize earlier than the other part of the volatile solvent liquid A1. In other words, in the volatile solvent liquid A1 supplied to the surface of the substrate W, only the portion in contact with the surface of the substrate W is rapidly heated so as to be in a gas phase. Thereby, around the pattern P on the surface of the substrate W, a gas layer (a collection of bubbles) due to vaporization (boiling) of the liquid A1 of the volatile solvent, that is, the gas layer A2 of the volatile solvent seems to be a thin film. Formed. For this reason, the liquid A1 of the volatile solvent between the adjacent patterns P becomes a large number of liquid balls by its surface tension while being pushed out to the surface of the substrate W by the gas layer A2. In FIG. 12B, when the liquid dries, the drying speed of each part of the substrate surface becomes uneven, and when the liquid A1 remains between some patterns P, the surface of the liquid A1 in that part. This shows the phenomenon that the pattern collapses due to tension.

  The suction drying means 77 functions by setting a solvent suction port 77 </ b> A that opens in an annular shape toward the periphery of the table 73 as a work position that is positioned around the substrate W held by the table 73. The solvent suction port 77A sucks and receives the volatile solvent scattered from the rotating substrate W. The suction drying unit 77 is electrically connected to the control unit 80, and the driving thereof is controlled by the control unit 80. The solvent suction port 77A has a vacuum pump (not shown) for sucking volatile solvent liquid balls, and a discharge pipe (not shown) for discharging volatile solvent liquid balls received by suction. Connected).

  The control unit 80 includes a microcomputer that centrally controls each unit and a storage unit that stores substrate processing information and various programs related to substrate processing. The control unit 80 controls the rotation mechanism 74, the gas supply unit 75, the heating unit 76, the suction drying unit 77, and the like based on the substrate processing information and various programs, and controls the surface of the substrate W on the rotating table 73. Control of gas supply by the gas supply unit 75, heating by the heating means 76, suction by the suction drying means 77, and the like are performed.

Hereinafter, a procedure for cleaning and drying the substrate W by the substrate processing apparatus 10 will be described.
(1) The substrate W supplied from the substrate storage cassette 21 of the substrate supply / discharge unit 20 to the in-dedicated buffer 31 of the substrate storage buffer unit 30 by the transfer robot 11 is taken out by the transfer robot 12, and the substrate W is removed in the substrate processing chamber 40. In a state of being set on the table 53 of the substrate cleaning chamber 50, the control unit 60 of the substrate cleaning chamber 50 controls the rotation mechanism 54 to rotate the table 53 at a predetermined rotational speed, and then the chemical solution in the drainage recovery cup 100. In a state where the recovery port 101A is largely opened around the substrate W on the table 53, the chemical solution supply unit 46 is controlled to supply the chemical solution, that is, APM from the nozzle 56A to the surface of the substrate W on the rotating table 53 for a predetermined time. To do. APM as a chemical solution is discharged from the nozzle 56A toward the center of the substrate W on the rotating table 53, and spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. Thereby, the surface of the substrate W on the table 53 is covered with the APM and processed.

  The control unit 60 continuously rotates the table 53 from the above (1) to (3) described later. At this time, the processing conditions such as the rotational speed of the table 53 and the predetermined time are set in advance, but can be arbitrarily changed by the operator.

  (2) Next, after the supply of the chemical solution is stopped, the control unit 60 opens the cleaning solution recovery port 102A of the drainage recovery cup 100 widely around the substrate W on the table 53, and then supplies the cleaning solution supply unit. 57, the cleaning liquid, that is, ultrapure water is supplied from the nozzle 57A to the surface of the substrate W on the rotating table 53 for a predetermined time. Ultrapure water as a cleaning liquid is discharged from the nozzle 57 </ b> A toward the center of the substrate W on the rotating table 53, and spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. As a result, the surface of the substrate W on the table 53 is covered and cleaned with the ultrapure water.

  (3) Next, the control unit 60 controls the solvent supply unit 58 in a state where the solvent recovery port 103A of the drainage recovery cup 100 is positioned at a work position facing the periphery of the substrate W on the table 53 and is wide open. Then, a volatile solvent, that is, IPA is supplied from the nozzle 58A to the surface of the substrate W on the rotating table 53 for a predetermined time. IPA as a volatile solvent is discharged from the nozzle 58A toward the center of the substrate W on the rotating table 53, and spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. As a result, the surface of the substrate W on the table 53 is replaced with IPA from ultrapure water. The rotation speed of the table 53, that is, the substrate W at this time is set so that the film of the volatile solvent becomes a thin film on the surface of the substrate W so that the surface of the substrate W is not exposed.

  The temperature of the IPA discharged from the nozzle 58A of the solvent supply unit 58 is less than its boiling point. By supplying the IPA to the surface of the substrate W reliably in a liquid state, it is ultrapure throughout the entire surface of the substrate W. Ensure that water is evenly replaced by IPA.

  (4) Next, the transfer robot 12 takes out the cleaned substrate W on the table 53 in which the rotation of the substrate cleaning chamber 50 is stopped, and the substrate W is removed from the table 73 of the substrate drying chamber 70 in the substrate processing chamber 40. In the state set above, the control unit 80 of the substrate drying chamber 70 controls the gas supply unit 75 to supply gas, that is, nitrogen gas, from the nozzle 75A to the surface of the substrate W on the rotating table 73 for a predetermined time. Nitrogen gas is discharged from the nozzle 75 </ b> A toward the entire area of the substrate W on the table 73. Thereby, the space surrounding the substrate W on the table 73 becomes a nitrogen atmosphere. By making this space a nitrogen atmosphere, the oxygen concentration can be reduced and the generation of watermarks on the surface of the substrate W can be suppressed.

  The controller 80 continuously rotates the table 73 from the above (4) to the later described (6). At this time, processing conditions such as the rotation speed of the table 73 and a predetermined time are set in advance, but can be arbitrarily changed by the operator.

  (5) Next, the control unit 80 controls the heating unit 76 to turn on the lamps 76A of the heating unit 76 and heat the substrate W on the rotating table 73 for a predetermined time. At this time, the heating means 76 can perform heating that allows the temperature of the substrate W to reach 100 degrees or more in 10 seconds. Thereby, the liquid A1 of the volatile solvent that is in contact with the pattern P on the surface of the substrate W is instantly vaporized, and the liquid A1 of the other part of the volatile solvent on the surface of the substrate W is immediately liquefied. It becomes possible.

  Here, in the heat drying by the heating means 76, it is important to heat the substrate W to a high temperature of several hundred degrees in a few seconds in order to instantaneously vaporize the IPA that is a volatile solvent in contact with the pattern P of the substrate W. . Also, it is necessary to heat only the substrate W without heating the IPA. For this purpose, it is desirable to use a lamp 76A having a peak intensity at a wavelength of 500 to 3000 nm. In addition, for reliable drying, the final temperature of the substrate W (the final temperature reached by heating) is desirably 20 ° C. or higher than the boiling point of the atmospheric pressure of the processing liquid or solvent. The time to reach the final temperature is preferably within 10 seconds, for example, within the range of several tens of milliseconds to several seconds.

  (6) The IPA liquid balls generated on the surface of the substrate W by the heating action of the heating means 76 are blown to the outer periphery by the centrifugal force due to the rotation of the substrate W, and reach the suction drying means 77. At this time, since a suction force is applied to the solvent suction port 77A, the IPA liquid balls that have reached the suction drying means 77 are sucked and removed via the solvent suction port 77A. This completes the drying. Therefore, in this embodiment, the rotary table 73, the rotation mechanism 74, and the suction drying unit 77 remove the volatile solvent liquid balls generated on the surface of the substrate by the heating action of the heating unit 76, and dry the surface of the substrate. The drying means is configured.

  (7) Next, the dried substrate W is taken out on the table 73 whose rotation is stopped in the substrate drying chamber 70 by the transfer robot 12, and this substrate W is taken out to the out dedicated buffer 32 of the substrate storage buffer unit 30. throw into.

  (8) The transfer robot 11 takes out the substrate W from the out-only buffer 32 of the substrate storage buffer unit 30 and discharges it to the substrate storage cassette 21 of the substrate supply / discharge unit 20.

  Therefore, in the substrate processing apparatus 10, the substrate processing chamber 40 includes the substrate cleaning chamber 50 and the substrate drying chamber 70, and the transfer robot 12 as a substrate transfer means is provided between the substrate cleaning chamber 50 and the substrate drying chamber 70. Provided. Thus, in the substrate cleaning chamber 50, a step of supplying a cleaning liquid to the surface of the substrate W, a volatile solvent is supplied to the surface of the substrate W supplied with the cleaning liquid, and the cleaning liquid on the surface of the substrate W is replaced with a volatile solvent. The substrate W to which the volatile solvent is supplied in the substrate cleaning chamber 50 is transferred to the substrate drying chamber 70 by the transfer robot 12. In the substrate drying chamber 70, the step of heating the substrate W supplied with the volatile solvent in the substrate cleaning chamber 50 and the liquid balls of the volatile solvent generated on the surface of the substrate W by the heating of the substrate W are removed. And a step of drying the surface of the substrate W.

According to the present embodiment, the following operational effects can be obtained.
(a) The cleaning liquid supplied by the cleaning liquid supply unit 57, for example, ultrapure water, is shaken off from the surface of the rotating substrate W and once recovered in the cleaning liquid recovery unit 102 of the drainage recovery cup 100. In the process of supplying the IPA supplied from the substrate W to the substrate W, the ultrapure water and the water vapor once recovered by the cleaning liquid recovery unit 102 are the downward lip 121L of the first movable wall 120 and the upward lip of the second movable wall 130. Due to the presence of the labyrinth-like small gap of the cleaning liquid recovery port 102A due to 131L and the lip 121L, 131L projecting inwardly into the cleaning liquid recovery path 102B, it returns to the processing box 51 side. And is sealed on the cleaning liquid recovery unit 102 side.

  Therefore, there is no possibility that the ultrapure water and the water vapor once collected by the cleaning liquid collection unit 102 will be reattached to the surface of the substrate W or adsorbed by the IPA existing on the surface of the substrate W. As a result, the cleaning liquid present in the pattern gaps of the substrate W can be quickly replaced with IPA having a low surface tension, and pattern collapse during drying of the substrate W can be effectively prevented.

  (b) Due to the above-described sealing effect of the cleaning liquid once recovered in the cleaning liquid recovery unit 102 of the drainage recovery cup 100, the cleaning liquid on the surface of the substrate W can be efficiently removed by supplying a relatively small amount of the volatile solvent. The consumption of volatile solvents can be reduced. Thereby, the productivity of the substrate W can be improved.

  (c) By the liquid splash prevention mechanism 200 provided in the drainage recovery cup 100, the annular wall 121 surrounding the table 53 of the cleaning liquid recovery unit 102 rotates around the table 53 when the cleaning liquid is recovered. As a result, the cleaning liquid that has scattered from the rotating substrate W and collided with the wall surface of the annular wall 121 through the cleaning liquid recovery port 102 </ b> A does not rebound from the wall surface of the annular wall 121 to the table 53 and the substrate W side. Therefore, the cleaning liquid once recovered by the cleaning liquid recovery unit 102 can be prevented from returning to the inside of the processing box 51, and the recovery efficiency of the cleaning liquid can be improved.

  The substrate cleaning chamber 50A shown in FIG. 7 is different from the substrate cleaning chamber 50 shown in FIG. 2 in that the arrangement of the chemical solution recovery unit 101 and the cleaning solution recovery unit 102 is changed as follows, and the supply units 56, 57, The liquids 58 supplied to the surface of the substrate W and the vapors of those liquids generated in the upper space of the substrate W can be separated and recovered as follows through the recovery ports 101A to 103A of the recovery units 101 to 103. is there.

i. During Recovery of Chemical Solution In the drainage recovery cup 100 of the substrate cleaning chamber 50 </ b> A, the chemical recovery unit 101 has a chemical solution due to the annular gap between the annular wall 121 of the first movable wall 120 and the annular wall 131 of the second movable wall 130. The recovery path 101B is formed, and the upper end portion of the annular wall 121 and the upper end portion of the annular wall 131 are opposed to each other vertically to form the chemical solution recovery port 101A. By positioning the annular wall 121 at the ascending end by the elevating part 122 of the first movable wall 120 and positioning the annular wall 131 at the descending end by the elevating part 132 of the second movable wall 130, the above-described chemical solution recovery port 101A is opened greatly. The chemical and its vapor can be recovered.

ii. At the time of recovery of the cleaning liquid after the recovery of the chemical liquid In the drainage recovery cup 100 of the substrate cleaning chamber 50A, the cleaning liquid recovery unit 102 has an annular shape between the annular wall 111 of the cup body 110 and the annular wall 121 of the first movable wall 120. The cleaning liquid recovery path 102B is formed by the gap, and the upper end portion of the annular wall 111 and the upper end portion of the annular wall 121 are opposed to each other to form a cleaning liquid recovery port 102A. While the annular wall 131 is positioned at the lower end by the elevating part 132 of the second movable wall 130, the above-described cleaning liquid recovery port 102A is enlarged by positioning the annular wall 121 at the lower end by the elevating part 122 of the first movable wall 120. Open to allow the cleaning liquid and its vapor to be recovered. At this time, the chemical solution recovery port 101A is reduced in size, and the expensive chemical solution already recovered from the chemical solution recovery port 101A and attached or floating inside the chemical solution recovery path 101B and its vapor return to the inside of the processing box 51. Is blocked.

  A liquid splash prevention mechanism 300 that rotates the annular wall 111 of the cup body 110 surrounding the table 53 (the substrate W on the table 53) of the cleaning liquid recovery unit 102 around the table 53 at the time of recovery of the cleaning liquid may be provided. For example, as shown in FIG. 9, the liquid splash prevention mechanism 300 includes a cup body 110 provided with an up-and-down rotation unit 301. As shown in FIGS. 9 (A) and 9 (B), the liquid splash-preventing mechanism 300 has a bottomed cylindrical cup body 110 as shown in FIG. 9 (B). Used, the rotation shaft 53B of the table 53 is inserted into the central hole of the bottom 110A of the cup body 110, and the upper end roller 301B of the lifting shaft 301A of the lifting / lowering rotation section 301 standing at a plurality of positions around the rotation shaft 53B is used. The bottom 110A is supported from below. Then, the liquid splash prevention mechanism 300 separates the bottom 110A of the cup body 110 supported by the upper end roller 301B from below when the lifting shaft 301A is lowered from the annular flange 53C provided on the outer periphery of the rotating shaft 53B of the table 53, and the lifting shaft 301A. , The bottom 110A of the cup body 110 supported by the upper end roller 301B from below is brought into contact with and pressed against an annular flange 53C provided on the outer periphery of the rotation shaft 53B of the table 53, and the rotational force of the rotation shaft 53B is applied to the cup body 110. Make it possible to communicate. Accordingly, the liquid splash prevention mechanism 300 positions the annular wall 111 of the cup body 110 at the rising end when the lifting shaft 301A is lifted, and opens the cleaning liquid recovery port 102A largely around the substrate W on the table 53. The bottom 110 </ b> A of the cup body 110 and the annular wall 111 are rotated around the table 53 together with the table 53.

  According to this, the cleaning liquid splashed from the rotating substrate W and collided with the wall surface of the annular wall 111 through the cleaning liquid recovery port 102A does not rebound from the wall surface of the annular wall 111 to the table 53 and the substrate W side. Along with the movement of the wall surface of the rotating annular wall 111, it is accompanied in the circumferential direction. Accordingly, the cleaning liquid, for example, ultrapure water that has reached the wall surface of the annular wall 111 from the cleaning liquid recovery port 102A of the cleaning liquid recovery unit 102 is prevented from bouncing back from the wall surface of the annular wall 111 and returning to the inside of the processing box 51.

  In the liquid splash preventing mechanism 300, the rotational force that rotates the annular wall 111 of the cup body 110 may be applied from a system different from the rotational force of the table 53.

iii. At the time of recovery of the volatile solvent after recovery of the cleaning liquid In the drainage recovery cup 100 of the substrate cleaning chamber 50 </ b> A, the solvent recovery unit 103 is connected to the second movable wall 130 in the same manner as in the drainage recovery cup 100 of the substrate cleaning chamber 50. A solvent recovery port 103 </ b> A is formed between the upper end portion of the annular wall 131 and the table 53, and is formed between the annular wall 131 and the table 53. By positioning the annular wall 121 at the ascending end by the elevating part 122 of the first movable wall 120 and positioning the annular wall 131 at the ascending end by the elevating part 132 of the second movable wall 130, the above-described solvent recovery port 103A is greatly opened. The volatile solvent can be recovered. At this time, the chemical solution recovery port 101A is reduced in size, and the expensive chemical solution already recovered from the chemical solution recovery port 101A and attached or floating inside the chemical solution recovery path 101B and its vapor return to the inside of the processing box 51. Is blocked.

  Further, as shown in FIG. 8, a downward lip 111K having a stepped lower surface is formed at the upper end of the annular wall 111 of the cup body 110, and a stepped upper surface is formed at the upper end of the annular wall 121 of the first movable wall 120. An upward lip 121K is formed. Therefore, in a state where the annular wall 121 of the first movable wall 120 is positioned at the rising end by the elevating part 122 as described above, the downward lip 111K of the cup body 110 and the upward lip 121K of the first movable wall 120 are moved up and down. The lips 111K and 121K are close to each other, and the cleaning liquid recovery port 102A formed between them is a labyrinth-like small gap G. Further, the downward lip 111K of the cup body 110 and the upward lip 121K of the first movable wall 120 form a protruding piece shape protruding inward of the cleaning liquid recovery path 102B. Thus, after the cleaning liquid is recovered by the above-described cleaning liquid recovery port 102A, when the volatile solvent is recovered by the above-mentioned solvent recovery port 103A, it is recovered by the cleaning liquid recovery port 102A and adheres to or floats on the inner surface of the cleaning liquid recovery path 102B. When the cleaning liquid, for example, ultrapure water and its water vapor return to the inside of the processing box 51, the labyrinth-like smallness of the cleaning liquid recovery port 102A formed by the downward lip 111K of the cup body 110 and the upward lip 121K of the first movable wall 120 is formed. Presence of gaps and their lip 111K, 121K are reliably prevented by the shape of a protruding piece protruding inward of the cleaning liquid recovery path 102B.

  Therefore, in the drainage recovery cup 100 of the substrate cleaning chamber 50A, the chemical solution supplied by the chemical solution supply unit 56 to the surface of the substrate W and its vapor are supplied to the chemical solution recovery port 101A and the chemical solution recovery path 101B of the chemical solution recovery unit 101 described above. The cleaning liquid and the vapor supplied by the cleaning liquid supply unit 57 to the surface of the substrate W are recovered by the cleaning liquid recovery port 102A and the cleaning liquid recovery path 102B of the cleaning liquid recovery unit 102, and the solvent supply unit 58 is recovered by the surface of the substrate W. The volatile solvent supplied to is recovered by the solvent recovery port 103A and the solvent recovery path 103B of the solvent recovery unit 103 described above. The drainage recovery cup 100 of the substrate cleaning chamber 50 has substantially the same effect, and the cleaning liquid once recovered by the cleaning liquid recovery unit 102, such as ultrapure water and its water vapor, is applied to the downward lip of the cup body 110. The presence of labyrinth-like small gaps in the cleaning liquid recovery port 102A formed by the upward lip 121K of 111K and the first movable wall 120, and the lips 111K and 121K have a protruding piece shape protruding inward of the cleaning liquid recovery path 102B. Thus, the cleaning liquid collecting unit 102 is surely sealed, and the ultrapure water and the water vapor are prevented from returning to the processing box 51 side. As a result, the cleaning liquid present in the pattern gaps of the substrate W can be quickly replaced with IPA having a low surface tension, and pattern collapse during drying of the substrate W can be effectively prevented.

  (c) Further, the liquid splash prevention mechanism 300 provided in the drainage recovery cup 100 causes the annular wall 111 surrounding the table 53 of the cleaning liquid recovery unit 102 to rotate around the table 53 when the cleaning liquid is recovered. As a result, the cleaning liquid scattered from the rotating substrate W and colliding with the wall surface of the annular wall 111 through the cleaning liquid recovery port 102 </ b> A does not rebound from the wall surface of the annular wall 111 to the table 53 and the substrate W side. Therefore, the cleaning liquid once recovered by the cleaning liquid recovery unit 102 can be prevented from returning to the inside of the processing box 51, and the recovery efficiency of the cleaning liquid can be improved.

  The substrate cleaning chamber 50B shown in FIG. 10 is different from the substrate cleaning chamber 50 shown in FIG. 2 in that a labyrinth-like small gap is formed also in the chemical solution recovery port 101A of the chemical solution recovery unit 101.

  That is, in the drainage recovery cup 100 of the substrate cleaning chamber 50B, in addition to the configuration of the drainage recovery cup 100 in the substrate cleaning chamber 50, as shown in FIG. A downward lip 111K having a stepped lower surface is formed, and an upward lip 121K having a stepped upper surface is formed at the upper end of the annular wall 121 of the first movable wall 120. Therefore, when the cleaning liquid is recovered by the cleaning liquid recovery unit 102, the downward lip 111 </ b> K of the cup body 110 and the upward lip 121 </ b> K of the first movable wall 120 with the annular wall 121 of the first movable wall 120 positioned at the rising end by the lifting / lowering part 122. And the lips 111K and 121K make the chemical solution recovery port 101A formed between them a labyrinth-like small gap G. Further, the downward lip 111K of the cup body 110 and the upward lip 121K of the first movable wall 120 form a protruding piece projecting inward of the chemical solution recovery path 101B.

  Therefore, in the drainage recovery cup 100 of the substrate cleaning chamber 50B, after the recovery of the chemical liquid of the above-mentioned ii. In the drainage recovery cup 100 of the substrate cleaning chamber 50, when the cleaning liquid is recovered, as shown in FIG. The annular wall 131 is positioned at the descending end by the elevating unit 132, the annular wall 121 is positioned at the ascending end by the elevating unit 122, the cleaning liquid recovery port 102A is opened widely, and the chemical solution recovery port 101A is a labyrinth-like small gap. As a result, the expensive chemical liquid and its vapor collected in the above-mentioned i. In the waste liquid recovery cup 100 of the substrate cleaning chamber 50 and attached or floating on the inner surface of the chemical liquid recovery path 101B may return to the inside of the processing box 51. The presence of the labyrinth small gap G of the chemical recovery port 101A by the downward lip 111K of the cup body 110 and the upward lip 121K of the first movable wall 120, and the lips 111K and 121K protrude inward of the chemical recovery path 101B. It is surely prevented by being in the form of a piece.

  In the drainage recovery cup 100 of the substrate cleaning chamber 50B, FIG. 11B shows a state when the chemical recovery unit 101 recovers the chemical solution, and FIG. 11C shows a state when the solvent recovery unit 103 recovers the volatile solvent. Indicates the state.

  The embodiment of the present invention has been described in detail with reference to the drawings. However, the specific configuration of the present invention is not limited to this embodiment, and even if there is a design change or the like without departing from the gist of the present invention. It is included in the present invention.

  For example, in the practice of the present invention, the drainage recovery cup of the present invention may include four or more liquid recovery units for recovering each of four or more types of liquids.

  Further, when the drainage recovery cup of the present invention has a plurality of liquid recovery units, the liquid recovery ports of all the liquid recovery units may be labyrinth-like small gaps after recovering the liquid to the liquid recovery unit. .

  According to the present invention, it is possible to reliably replace the cleaning liquid on the substrate surface with a volatile solvent to effectively prevent pattern collapse during drying of the substrate and improve the productivity of such a substrate.

10 substrate processing apparatus 12 transfer robot (substrate transfer means)
50, 50A, 50B Substrate cleaning chamber 57 Cleaning liquid supply unit 58 Solvent supply unit 70 Substrate drying chamber 76 Heating unit 77 Suction drying unit (drying unit)
100 Waste liquid recovery cup 102 Cleaning liquid recovery part 102A Cleaning liquid recovery port 102B Cleaning liquid recovery path 103 Solvent recovery part 103A Solvent recovery port 103B Solvent recovery path 111K, 121K, 121L, 131L Lip 200, 300 Liquid splash prevention mechanism W Substrate

Claims (7)

A substrate cleaning chamber and a substrate drying chamber;
The substrate cleaning chamber is a rotary table on which the substrate is placed and rotated, a cleaning liquid supply unit that supplies the cleaning liquid to the surface of the substrate, a volatile solvent to the surface of the substrate supplied with the cleaning liquid, A substrate processing apparatus configured to include a solvent supply unit that replaces a cleaning liquid with a volatile solvent,
The substrate cleaning chamber is equipped with a drainage recovery cup that surrounds the rotary table.
The drainage recovery cup has a cleaning liquid recovery part having a cleaning liquid recovery port for recovering cleaning liquid scattered from the substrate rotating with the rotary table, and a solvent recovery port for recovering the volatile solvent scattered from the substrate rotating with the rotary table. A solvent recovery unit,
A substrate processing apparatus in which a cleaning liquid recovery unit of a drainage recovery cup is configured to open a cleaning liquid recovery port when recovering a cleaning liquid, and to make the cleaning liquid recovery port a labyrinth-like small gap after recovering the cleaning liquid.   The cleaning liquid recovery part of the drainage recovery cup forms a cleaning liquid recovery path between the inner and outer annular walls surrounding the rotary table, and the lip at each upper end of the inner and outer annular walls forms a cleaning liquid recovery port relative to each other. The substrate processing apparatus according to claim 1, wherein the lips form a protruding piece protruding toward the inside of the cleaning liquid recovery path. When the cleaning liquid recovery unit collects the cleaning liquid, the cleaning liquid recovery port is opened wide and the solvent recovery port of the solvent recovery unit is made small.
The substrate processing apparatus according to claim 1 or 2, wherein the cleaning liquid recovery port is a labyrinth-like small gap when recovering the volatile solvent.   The substrate processing apparatus according to claim 1, wherein an annular wall surrounding the rotary table of the cleaning liquid recovery unit is configured to rotate around the rotary table when the cleaning liquid is recovered. A substrate processing method using a substrate cleaning chamber and a substrate drying chamber,
The substrate cleaning chamber includes a step of supplying a cleaning liquid to the surface of the substrate and a step of supplying a volatile solvent to the surface of the substrate supplied with the cleaning liquid and replacing the cleaning liquid on the surface of the substrate with a volatile solvent. A processing method,
In the step of supplying the cleaning liquid to the surface of the substrate, the cleaning liquid scattered from the rotating substrate is collected by the cleaning liquid recovery port of the cleaning liquid recovery unit, and in the step of supplying the volatile solvent to the surface of the substrate, the volatilization scattered from the rotating substrate. The organic solvent is recovered through the solvent recovery port of the solvent recovery unit,
A substrate processing method in which a cleaning liquid recovery port of a cleaning liquid recovery unit is opened wide at the time of recovery of the cleaning liquid, and the cleaning liquid recovery port is made into a labyrinth-like small gap after recovery of the cleaning liquid. At the time of recovery of the cleaning liquid, the cleaning liquid recovery port of the cleaning liquid recovery unit is greatly opened, and the solvent recovery port of the solvent recovery unit is made a small opening,
The substrate processing method according to claim 5, wherein when the volatile solvent is recovered, the cleaning liquid recovery port of the cleaning liquid recovery unit is a labyrinth-like small gap.   The substrate processing method according to claim 5, wherein the annular wall surrounding the rotating substrate of the cleaning liquid recovery unit is rotated around the rotary table when recovering the cleaning liquid.

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