JP6276924B2 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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JP6276924B2
JP6276924B2 JP2013054573A JP2013054573A JP6276924B2 JP 6276924 B2 JP6276924 B2 JP 6276924B2 JP 2013054573 A JP2013054573 A JP 2013054573A JP 2013054573 A JP2013054573 A JP 2013054573A JP 6276924 B2 JP6276924 B2 JP 6276924B2
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substrate
solvent
heating
liquid
drying
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JP2014183063A (en
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林 航之介
航之介 林
古矢 正明
正明 古矢
崇 大田垣
崇 大田垣
裕次 長嶋
裕次 長嶋
淳 木名瀬
淳 木名瀬
正泰 安部
正泰 安部
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芝浦メカトロニクス株式会社
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Description

The present invention relates to a substrate processing apparatus .
  A substrate processing apparatus supplies a processing liquid to the surface of a substrate such as a wafer or a liquid crystal substrate in a manufacturing process of a semiconductor or the like to process the substrate surface, and then supplies a cleaning liquid such as ultrapure water to the substrate surface. This is an apparatus for cleaning the substrate surface and further drying it. In this drying process, there is a problem that, for example, the pattern around the memory cell and the gate collapses due to the miniaturization accompanying the recent high integration and high capacity of the semiconductor. This is due to the spacing and structure between patterns, the surface tension of the cleaning liquid, and the like.
Therefore, a substrate drying method using IPA (2-propanol: isopropyl alcohol) whose surface tension is smaller than that of ultrapure water has been proposed for the purpose of suppressing the above-described pattern collapse (see, for example, Patent Document 1). ), A method of drying the substrate by substituting the ultrapure water on the substrate surface with IPA is used in a mass production factory or the like.
JP 2008-34779
  However, the miniaturization of semiconductors is progressing more and more, and even when drying using a liquid such as an organic solvent having a low surface tension, such as IPA, the fine pattern of the wafer collapses due to the surface tension of the liquid. There is.
  For example, in the process of drying the liquid, unevenness occurs in the drying speed of each part of the substrate surface. As shown in FIG. 5B, when the liquid A1 remains between some patterns P, the liquid A1 in that part is left. The pattern collapses due to surface tension. In particular, when the pattern of the remaining part of the liquid collapses elastically by attraction due to the surface tension of the liquid, the slightly dissolved residue in the liquid agglomerates, and then the liquid is completely dried. Will stick due to the presence of residues and the like.
An object of the present invention is to make drying the liquid on the surface immediately upon drying of the substrate.
A substrate processing apparatus according to the present invention comprises:
A table that supports the substrate in a horizontal state;
A rotation mechanism for rotating the table;
A cleaning liquid supply unit for supplying a cleaning liquid to the surface of the substrate supported in a horizontal state on the table rotated by the rotation mechanism ;
A solvent supply unit that is supplied with the cleaning liquid, supplies a volatile solvent to the surface of the rotating substrate, and replaces the cleaning liquid on the surface of the substrate with the volatile solvent;
Heating means for supplying the volatile solvent and heating the rotating substrate;
Drying means for removing the liquid balls of the volatile solvent generated on the surface of the substrate by the heating action of the heating means from the rotating substrate and drying the surface of the substrate;
Cooling means for cooling the substrate dried by the drying means;
Have
The drying means has a solvent suction / discharge section having a solvent suction port that is annularly opened around the table and to which suction force is applied,
The solvent suction / discharge unit has a lifting mechanism that lifts and lowers the solvent suction port, and the lifting mechanism holds the solvent suction port at a standby position below the table surface of the table and the table held by the table. The solvent suction port when the solvent supply unit supplies the volatile solvent to the surface of the substrate and when the surface of the substrate is dried by the drying means. At the working position,
The liquid balls of the volatile solvent generated on the surface of the substrate by the heating action by the heating means are removed by sucking with the solvent suction port positioned at the working position, and the liquid balls are removed from the surface of the substrate. The substrate from which is removed is cooled by the cooling means.

According to the substrate processing apparatus of the present invention, it is possible to make drying the liquid on the surface immediately upon drying of the substrate.
FIG. 1 is a schematic view showing a substrate processing apparatus. FIG. 2 is a schematic diagram showing the configuration of the substrate processing chamber of the substrate processing apparatus. FIG. 3 is a schematic diagram showing the configuration of the substrate transfer process of the substrate processing apparatus. FIG. 4 is a schematic view showing a modification of the substrate transfer process of the substrate processing apparatus. FIG. 5 is a schematic view showing a drying state of the volatile solvent on the substrate surface.
  As shown in FIG. 1, the substrate treatment apparatus 10 includes a substrate supply / discharge unit 20, a substrate storage buffer unit 30, and a plurality of substrate processing chambers 40, and the substrate supply / discharge unit 20 and the substrate storage buffer unit 30. The transfer robot 11 is provided between the substrate storage buffer unit 30 and the substrate processing chamber 40.
  The substrate supply / discharge unit 20 can carry in and out a plurality of substrate storage cassettes 21. The substrate storage cassette 21 stores a plurality of substrates W such as unprocessed wafers and liquid crystal substrates and carries them into the substrate supply / discharge unit 20, and stores the substrates W processed in the substrate processing chamber 40. It is carried out from the discharge part 20. Unprocessed substrates W are sequentially taken out from the storage shelves in multiple stages in the substrate storage cassette 21 in the substrate supply / discharge unit 20 by the transfer robot 11 and supplied to an in-dedicated buffer 31 (to be described later) of the substrate storage buffer unit 30. Further, it is taken out from the in-dedicated buffer 31 of the substrate storage buffer unit 30 by the transfer robot 12 and supplied to the substrate processing chamber 40 to be cleaned and dried. The substrate W thus processed is taken out of the substrate processing chamber 40 by the transfer robot 12 and put into an out-only buffer 32 (to be described later) of the substrate storage buffer unit 30 to be cooled. The substrate W cooled to a predetermined temperature state in the out-only buffer 32 of the substrate storage buffer unit 30 is taken out by the transport robot 11 and placed in an empty storage shelf of the substrate storage cassette 21 in the substrate supply / discharge unit 20. It is discharged sequentially. The substrate storage cassette 21 filled with the processed substrates W is unloaded from the substrate supply / discharge unit 20.
  As shown in FIG. 3, the substrate storage buffer unit 30 is provided with a plurality of in-dedicated buffers 31 for storing unprocessed substrates W in a multi-stage shelf shape, and is cleaned and dried in the substrate processing chamber 40. A plurality of out-only buffers 32 for storing the substrates W are provided in a multi-tiered shelf shape. Inside the out-only buffer 32, a cooling means 70 is provided as will be described later. The in-dedicated buffer 31 and the out-dedicated buffer 32 do not have to be multistage.
  As shown in FIG. 2, the substrate processing chamber 40 includes a processing box 41 serving as a processing chamber, a cup 42 provided in the processing box 41, and a table 43 for supporting the substrate W in a horizontal state in the cup 42. The rotating mechanism 44 that rotates the table 43 in a horizontal plane and the solvent suction / discharge unit 45 that moves up and down around the table 43 are provided. Further, the substrate processing chamber 40 includes a chemical solution supply unit 46 that supplies a chemical solution to the surface of the substrate W on the table 43, a cleaning solution supply unit 47 that supplies a cleaning solution to the surface of the substrate W on the table 43, and a volatile solvent. A solvent supply unit 48 for supplying gas, a gas supply unit 49 for supplying gas, a heating means 51 for heating the substrate W supplied with a volatile solvent, and a control unit 60 for controlling each unit are provided.
  In the processing box 41, a substrate loading / unloading port 41A is opened in a part of the peripheral wall. The substrate loading / unloading port 41A is opened and closed by a shutter 41B.
  The cup 42 is formed in a cylindrical shape, and encloses the table 43 from the periphery and accommodates it inside. The upper part of the peripheral wall of the cup 42 has a diameter that is obliquely upward and opens so that the substrate W on the table 43 is exposed upward. The cup 42 receives the chemical liquid and the cleaning liquid that have flowed down or scattered from the rotating substrate W. Note that a discharge pipe (not shown) for discharging the received chemical solution and cleaning solution is provided at the bottom of the cup 42.
  The table 43 is positioned near the center of the cup 42 and is provided so as to be rotatable in a horizontal plane. The table 43 has a plurality of support members 43A such as pins, and the support members 43A hold a substrate W such as a wafer or a liquid crystal substrate in a detachable manner.
  The rotating mechanism 44 includes a rotating shaft coupled to the table 43 and a motor (none of which is shown) that serves as a driving source for rotating the rotating shaft. The table 43 is driven by the motor via the rotating shaft. Rotate. The rotation mechanism 44 is electrically connected to the control unit 60, and the driving thereof is controlled by the control unit 60.
  The solvent suction / discharge unit 45 includes a solvent suction port 45A that surrounds the table 43 and opens in an annular shape. The solvent suction / discharge unit 45 has an elevating mechanism (not shown) for raising and lowering the solvent suction port 45 </ b> A, a standby position for positioning the solvent suction port 45 </ b> A below the table surface of the table 43, and a substrate W held on the table 43. The solvent suction port 45A is moved up and down to the work position where the solvent suction port 45A is positioned around the. The solvent suction port 45A sucks and receives the volatile solvent scattered from the rotating substrate W. The solvent suction port 45A has an exhaust fan or vacuum pump (not shown) for sucking the volatile solvent, and a discharge pipe (not shown) for discharging the volatile solvent received by suction. It is connected.
  The chemical solution supply unit 46 has a nozzle 46A that discharges the chemical solution from an oblique direction with respect to the surface of the substrate W on the table 43. The chemical solution, for example, resist peeling is applied from the nozzle 46A to the surface of the substrate W on the table 43. APM for treatment (a mixture of ammonia water and hydrogen peroxide solution) is supplied. The nozzle 46 </ b> A is mounted on the upper part of the peripheral wall of the cup 42, and its angle, discharge flow rate, and the like are adjusted so that the chemical solution is supplied near the center of the surface of the substrate W. The chemical solution supply unit 46 is electrically connected to the control unit 60, and the driving thereof is controlled by the control unit 60. The chemical solution supply unit 46 includes a tank that stores the chemical solution, a pump that is a drive source, a valve that is an adjustment valve that adjusts the supply amount (none of which is shown), and the like.
The cleaning liquid supply unit 47 has a nozzle 47A that discharges the cleaning liquid from an oblique direction with respect to the surface of the substrate W on the table 43. The cleaning liquid, for example, a cleaning process is applied to the surface of the substrate W on the table 43 from the nozzle 47A. Supply pure water (ultra pure water). The nozzle 47A is mounted on the upper part of the peripheral wall of the cup 42, and its angle, discharge flow rate, and the like are adjusted so that the cleaning liquid is supplied near the center of the surface of the substrate W. The cleaning liquid supply unit 47 is electrically connected to the control unit 60, and its driving is controlled by the control unit 60. The cleaning liquid supply unit 47 includes a tank that stores the cleaning liquid, a pump that is a driving source, a valve that is an adjustment valve that adjusts the supply amount (none of which are shown), and the like.
  The solvent supply unit 48 includes a nozzle 48 </ b> A that discharges a volatile solvent from an oblique direction with respect to the surface of the substrate W on the table 43, and the volatile solvent is applied to the surface of the substrate W on the table 43 from the nozzle 48 </ b> A. For example, IPA is supplied. The solvent supply unit 48 supplies a volatile solvent to the surface of the substrate W cleaned with the cleaning liquid supplied by the cleaning liquid supply unit 47, and replaces the cleaning liquid on the surface of the substrate W with a volatile solvent. The nozzle 48 </ b> A is mounted on the upper part of the peripheral wall of the cup 42, and its angle, discharge flow rate, and the like are adjusted so that the volatile solvent is supplied near the center of the surface of the substrate W. The solvent supply unit 48 is electrically connected to the control unit 60, and the driving thereof is controlled by the control unit 60. The solvent supply unit 48 includes a tank that stores a volatile solvent, a pump that serves as a drive source, a valve that serves as an adjustment valve that adjusts the supply amount (none of which are shown), and the like.
  Here, in addition to IPA, for example, monovalent alcohols such as ethanol, ethers such as diethyl ether and ethyl methyl ether, ethylene carbonate, and the like can be used as the volatile solvent. .
  The gas supply unit 49 includes a nozzle 49A that discharges gas from an oblique direction with respect to the surface of the substrate W on the table 43, and a gas, for example, nitrogen gas, is supplied from the nozzle 49A to the surface of the substrate W on the table 43. And the space on the surface of the substrate W in the processing box 41 is made a nitrogen gas atmosphere. The nozzle 49 </ b> A is mounted on the upper part of the peripheral wall of the cup 42, and its angle, discharge flow rate, and the like are adjusted so that gas is supplied near the center of the surface of the substrate W. The gas supply unit 49 is electrically connected to the control unit 60, and its driving is controlled by the control unit 60. The gas supply unit 49 includes a tank for storing gas, a valve (not shown) serving as an adjustment valve for adjusting the supply amount, and the like.
  Here, as the gas to be supplied, an inert gas other than nitrogen gas, for example, argon gas, carbon dioxide gas, helium gas, or the like can be used. Since this inert gas is supplied to the surface of the substrate W, oxygen on the surface of the substrate W can be removed, and generation of a watermark (water stain) can be prevented.
  The heating means 51 has a plurality of lamps 51A, is provided above the table 43, and irradiates the surface of the substrate W on the table 43 with light when each lamp 51A is turned on. The heating means 51 is configured to be movable in the vertical direction (lifting direction) by the moving mechanism 51B. The irradiation position close to the cup 42 (the position close to the surface of the substrate W as shown by the solid line in FIG. 2). ) And a standby position separated from the cup 42 by a predetermined distance (position separated from the surface of the substrate W as indicated by a one-dot chain line in FIG. 2). The heating means 51 is electrically connected to the control unit 60, and the driving thereof is controlled by the control unit 60.
  Here, as the heating means 51, for example, a plurality of straight tube type lamps 51A provided in parallel or a plurality of light bulb type lamps 51A provided in an array can be used. As the lamp 51A, for example, a halogen lamp or a xenon flash lamp can be used.
  In the heating process of the substrate W using the heating means 51, the volatile solvent liquid A1 that is in contact with the pattern P on the surface of the substrate W as shown in FIG. Starts to vaporize earlier than the other part of the volatile solvent liquid A1. In other words, in the volatile solvent liquid A1 supplied to the surface of the substrate W, only the portion in contact with the surface of the substrate W is rapidly heated so as to be in a gas phase. Thereby, around the pattern P on the surface of the substrate W, a gas layer (a collection of bubbles) due to vaporization (boiling) of the liquid A1 of the volatile solvent, that is, the gas layer A2 of the volatile solvent seems to be a thin film. Formed. For this reason, the liquid A1 of the volatile solvent between the adjacent patterns P becomes a large number of liquid balls by its surface tension while being pushed out to the surface of the substrate W by the gas layer A2.
  However, the substrate processing apparatus 10 includes a cooling unit 70 that cools the substrate W that has been cleaned and dried in the substrate processing chamber 40 and heated to high temperature by the heating unit 51. In the heating stage by the heating means 51, the substrate W is heated to a high temperature of several hundred degrees in a few seconds as will be described later.
  The cooling means 70 of this embodiment is provided in the process of transporting the substrate W carried out from the substrate processing chamber 40. For example, the following are (A) and (B).
  (A) Cooling means 70 comprising inert gas supply means is provided in the out-only buffer 32 of the substrate storage buffer unit 30 where the substrate W taken out from the substrate processing chamber 40 is stored (FIG. 3). As a result, the inside space of the out-only buffer 32 is filled with an inert gas such as room temperature nitrogen gas supplied by the cooling means 70, and in the process of transporting the substrate supply / discharge unit 20 from the substrate processing chamber 40 to the substrate storage cassette 21. The high-temperature substrate W put into the buffer 32 can be cooled to a predetermined temperature or lower, for example, about room temperature. The gas supplied from the cooling means 70 may be room temperature air as long as it has a substrate cooling capacity, and may be a fan mechanism for efficiently supplying this to the substrate surface. Further, the cooling means 70 is not limited to gas as long as it cools the substrate W stored in the out-only buffer 32.
  (B) Cooling means 70 including an electronic cooler using a Peltier element or the like is built in the substrate mounting portion 12B of the transfer arm 12A in the transfer robot 12 that takes out the substrate W from the substrate processing chamber 40 (FIG. 4). Thereby, in the process of transporting from the substrate processing chamber 40 to the substrate storage buffer unit 30, the high-temperature substrate W placed on the substrate platform 12B of the transport arm 12A can be cooled to a predetermined temperature or lower, for example, about room temperature. To. This cooling means 70 may be incorporated in the transfer robot 11.
  The substrate W cooled by the cooling means 70 of (A) and / or (B) described above is then discharged to the substrate storage cassette 21 of the substrate supply / discharge section 20.
  The control unit 60 includes a microcomputer that centrally controls each unit and a storage unit that stores substrate processing information and various programs related to substrate processing. The control unit 60 includes a rotation mechanism 44, a solvent suction / discharge unit 45, a chemical solution supply unit 46, a cleaning solution supply unit 47, a solvent supply unit 48, a gas supply unit 49, a heating unit 51, a cooling unit based on the substrate processing information and various programs. The means 70 and the like are controlled to suck the surface of the substrate W on the rotating table 43 by the solvent suction / discharge unit 45, supply of the chemical solution by the chemical solution supply unit 46, supply of the cleaning solution by the cleaning solution supply unit 47, solvent supply unit Control of supply of the volatile solvent by 48, supply of gas by the gas supply unit 49, heating by the heating means 51, cooling by the cooling means 70, and the like are performed.
Hereinafter, a procedure for cleaning and drying the substrate W by the substrate processing apparatus 10 will be described.
(1) The substrate W supplied from the substrate storage cassette 21 of the substrate supply / discharge unit 20 to the in-dedicated buffer 31 of the substrate storage buffer unit 30 by the transfer robot 11 is taken out by the transfer robot 12, and this substrate W is removed from the substrate processing chamber 40. The controller 60 of the substrate processing chamber 40 controls the rotation mechanism 44 while being set on the table 43, rotates the table 43 at a predetermined rotation number, and then positions the solvent suction / discharge unit 45 at the standby position. Then, the chemical solution supply unit 46 is controlled to supply the chemical solution, that is, APM from the nozzle 46A to the surface of the substrate W on the rotating table 43 for a predetermined time. APM as a chemical solution is discharged from the nozzle 46A toward the center of the substrate W on the rotating table 43, and spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. As a result, the surface of the substrate W on the table 43 is covered with the APM and processed.
  The control unit 60 continuously rotates the table 43 from the above (1) to (6) described later. At this time, processing conditions such as the number of rotations of the table 43 and a predetermined time are set in advance, but can be arbitrarily changed by the operator.
  (2) Next, after the supply of the chemical liquid is stopped, the control unit 60 controls the cleaning liquid supply unit 47 to supply the cleaning liquid, that is, ultrapure water from the nozzle 47A to the surface of the substrate W on the rotating table 43. Time supply. The ultrapure water as the cleaning liquid is discharged from the nozzle 47 </ b> A toward the center of the substrate W on the rotating table 43, and spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. As a result, the surface of the substrate W on the table 43 is covered and cleaned with the ultrapure water.
  (3) Next, the control unit 60 positions the solvent suction / discharge unit 45 in the working position, controls the solvent supply unit 48, and from the nozzle 48A to the surface of the substrate W on the rotating table 43, the volatile solvent, that is, IPA. Is supplied for a predetermined time. IPA as a volatile solvent is discharged from the nozzle 48 </ b> A toward the center of the substrate W on the rotating table 43, and spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. As a result, the surface of the substrate W on the table 43 is replaced with IPA from ultrapure water. The rotation speed of the table 43, that is, the substrate W at this time is set so that the film of the volatile solvent becomes a thin film on the surface of the substrate W so that the surface of the substrate W is not exposed.
Further, the temperature of the IPA discharged from the nozzle 48A of the solvent supply unit 48 is set to be lower than the boiling point thereof, and by supplying the IPA to the surface of the substrate W in a liquid state without fail, it is ultrapure throughout the entire surface of the substrate W. Ensure certainty that water is evenly replaced by IPA.
  (4) Next, the control unit 60 controls the gas supply unit 49 to supply a gas, that is, nitrogen gas from the nozzle 49A to the surface of the substrate W on the rotating table 43 for a predetermined time. Nitrogen gas is discharged from the nozzle 49 </ b> A toward the entire area of the substrate W on the table 43. Thereby, the space surrounding the substrate W on the table 43 becomes a nitrogen atmosphere. By making this space a nitrogen atmosphere, the oxygen concentration can be reduced and the generation of watermarks on the surface of the substrate W can be suppressed.
  (5) Next, the control unit 60 controls the heating means 51 to turn on the lamps 51A of the heating means 51 and heat the substrate W on the rotating table 43 for a predetermined time. At this time, the heating means 51 can perform heating that allows the temperature of the substrate W to reach 100 degrees or more in 10 seconds. Thereby, the liquid A1 of the volatile solvent that is in contact with the pattern P on the surface of the substrate W is instantly vaporized, and the liquid A1 of the other part of the volatile solvent on the surface of the substrate W is immediately liquefied. It becomes possible.
  Here, in the heat drying by the heating means 51, it is important to heat the substrate W to a high temperature of several hundred degrees in a few seconds in order to instantaneously vaporize the IPA that is a volatile solvent in contact with the pattern P of the substrate W. . Also, it is necessary to heat only the substrate W without heating the IPA. For this purpose, it is desirable to use a lamp 51A having a peak intensity at a wavelength of 500 to 3000 nm. In addition, for reliable drying, the final temperature of the substrate W (the final temperature reached by heating) is desirably 20 ° C. or higher than the boiling point of the atmospheric pressure of the processing liquid or solvent. The time to reach the final temperature is preferably within 10 seconds, for example, within the range of several tens of milliseconds to several seconds.
  (6) The liquid balls of IPA generated on the surface of the substrate W by the heating action of the heating means 51 are blown to the outer periphery by the centrifugal force due to the rotation of the substrate W, and reach the solvent suction / discharge unit 45. At this time, since a suction force is applied to the solvent suction port 45A, the IPA liquid balls that have reached the solvent suction / discharge portion 45 are sucked and removed via the solvent suction port 45A. This completes the drying. Therefore, in this embodiment, the turntable 43, the rotation mechanism 44, and the solvent suction / discharge unit 45 constitute a drying unit that dries the surface of the substrate. The IPA liquid balls generated on the surface of the substrate W are removed from the surface of the substrate W by the centrifugal force generated by the rotation of the substrate W. By blowing gas toward the surface of the substrate W, the IPA liquid balls are blown off. The substrate W may be dried by removing it. In this case, it is preferable to arrange a collecting means such as a receiving member for receiving the blown IPA.
  (7) Next, the substrate W which has been cleaned and dried is taken out on the table 43 whose rotation is stopped in the substrate processing chamber 40 by the transfer robot 12, and this substrate W is dedicated to the out of the substrate storage buffer unit 30. Input to buffer 32. In the process of transporting the substrate W from the substrate processing chamber 40 to the out-dedicated buffer 32 of the substrate storage buffer unit 30, the substrate W is cooled by the cooling means 70 provided in the out-dedicated buffer 32 of (A) or the above-mentioned. In (B), the transfer robot 12 is cooled to a predetermined temperature or lower by the cooling means 70 built in the substrate platform 12B of the transfer arm 12A.
  (8) The transfer robot 11 takes out the substrate W cooled by the above (7) and lowered in temperature from the out-only buffer 32 of the substrate storage buffer unit 30 and discharges it to the substrate storage cassette 21 of the substrate supply / discharge unit 20. . The substrate W may be cooled in the process of transport from the substrate storage buffer unit 30 to the substrate supply / discharge unit 20 by the transport robot 11, for example, in the same manner as in the above (7).
According to the present embodiment, the following operational effects can be obtained.
(a) Due to the heating action of the substrate W by the heating means 51, the IPA liquid as a volatile solvent that has been replaced around the pattern P on the surface of the substrate W is vaporized, whereby the pattern P on the surface of the substrate W is vaporized. A gas layer in which IPA is vaporized is formed like a thin film around. For this reason, the IPA liquid between the adjacent patterns P of the substrate W becomes a large number of liquid balls by its own surface tension while being pushed out by the gas layer. The liquid balls of IPA generated on the surface of the substrate W in this way are blown to the outer periphery by the centrifugal force generated by the rotation of the substrate W, and are sucked and removed via the solvent suction port 45A of the solvent suction / discharge unit 45. . Therefore, the IPA liquid can be instantly dried on the entire surface of the substrate W, and as a result of uniforming the drying speed of each part of the surface of the substrate W, the IPA remains between some patterns P. Therefore, the collapse of the pattern P due to the surface tension of the liquid of such residual IPA can be suppressed.
(b) The substrate W heated through the heating means 51, dried and cleaned is cooled by the cooling means 70. Therefore, the dried substrate W can be fed into the substrate storage equipment such as the downstream substrate supply / discharge unit 20 and the substrate storage cassette 21 in a low temperature state, and the downstream facility is thermally damaged by the high temperature substrate W. There is no. Thereby, for example, the resin-based structural material of the downstream facility does not release contaminants based on thermal damage, and the front and back surfaces of the substrate W can be kept clean.
  (c) The cooling means 70 is provided in the process of transporting the substrate W. Therefore, the cooling operation by the cooling means 70 is performed during the time for transporting the substrate W to the downstream facility, and the productivity of the substrate W is not impaired. Even when the substrate W is enlarged, its mass productivity can be improved.
  The embodiment of the present invention has been described in detail with reference to the drawings. However, the specific configuration of the present invention is not limited to this embodiment, and even if there is a design change or the like without departing from the gist of the present invention. It is included in the present invention. For example, in the present embodiment, the order of steps (4) and (5) described above may be reversed.
  According to the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method that instantaneously dry the liquid on the surface when the substrate is dried and maintain cleanliness of both the front and back surfaces of the substrate after cleaning and drying.
10 Substrate processing device 43 Rotary table (drying means)
44 Rotating mechanism (drying means)
45 Solvent suction / discharge unit (drying means)
47 Cleaning liquid supply part 48 Solvent supply part 51 Heating means 70 Cooling means W Substrate

Claims (3)

  1. A table that supports the substrate in a horizontal state;
    A rotation mechanism for rotating the table;
    A cleaning liquid supply unit for supplying a cleaning liquid to the surface of the substrate supported in a horizontal state on the table rotated by the rotation mechanism ;
    A solvent supply unit that is supplied with the cleaning liquid, supplies a volatile solvent to the surface of the rotating substrate, and replaces the cleaning liquid on the surface of the substrate with the volatile solvent;
    Heating means for supplying the volatile solvent and heating the rotating substrate;
    Drying means for removing the liquid balls of the volatile solvent generated on the surface of the substrate by the heating action of the heating means from the rotating substrate and drying the surface of the substrate;
    Cooling means for cooling the substrate dried by the drying means;
    Have
    The drying means has a solvent suction / discharge portion having a solvent suction port that is annularly opened around the table and is provided with a suction force,
    The solvent suction / discharge unit has a lifting mechanism that lifts and lowers the solvent suction port, and the lifting mechanism holds the solvent suction port at a standby position below the table surface of the table and the table held by the table. The solvent suction port when the solvent supply unit supplies the volatile solvent to the surface of the substrate and when the surface of the substrate is dried by the drying means. At the working position,
    The liquid balls of the volatile solvent generated on the surface of the substrate by the heating action by the heating means are removed by sucking with the solvent suction port positioned at the working position, and the liquid balls are removed from the surface of the substrate. The substrate processing apparatus, wherein the substrate from which the substrate has been removed is cooled by the cooling means.
  2.   The substrate processing apparatus according to claim 1, wherein the cooling unit is provided in a transfer process of the substrate.
  3.   The drying means further includes blowing means for blowing a gas onto the surface of the substrate, and the liquid balls of the volatile solvent generated on the surface of the substrate by the heating action by the heating means are blown off and removed by the blowing means. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a substrate processing apparatus.
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TWI667722B (en) 2014-02-27 2019-08-01 日商斯克林集團公司 Substrate processing apparatus
JP6304592B2 (en) * 2014-03-25 2018-04-04 株式会社Screenホールディングス Substrate processing method and substrate processing apparatus
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