JP2015070013A - Soi wafer manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a SOI wafer manufacturing method capable of improving in-plane uniformity of the thickness of a SOI layer.SOLUTION: The manufacturing method includes: a first primary polishing step (S5) of polishing a surface to be polished of an active layer wafer by sucking and holding a bonded wafer in which a support wafer and the active layer wafer are bonded to each other on the sucking surface of a sucker; a first active layer wafer thickness distribution measuring step (S6) of measuring the thickness of the center part and the thickness of the periphery edge with regard to the active layer wafer of the bonded wafer; a first holding surface shape adjusting step (S7) of polishing the sucking surface so as to be convex or concave on the basis of a result of the measurement; and a second primary polishing step (S8) of polishing the surface to be polished by sucking and holding the bonded wafer on the polished sucking surface.

Description

  The present invention relates to a method for manufacturing an SOI (Silicon on Insulator) wafer, and more particularly to a method for manufacturing an SOI wafer in which an SOI layer is required to have a uniform thickness in a plane.

  An SOI wafer is obtained by providing an SOI layer (active layer) on a support wafer via an insulating layer, and requires high device integration, low power consumption, high speed, high reliability, and the like. Widely used for manufacturing semiconductor devices.

FIG. 1 is a flowchart showing a conventional manufacturing method of an SOI wafer (bonded SOI wafer).
In this method, first, an active layer wafer is bonded onto a support wafer (step T1). Then, the bonded support wafer and active layer wafer (hereinafter referred to as “bonded wafer”) are heat-treated for bonding strengthening (step T2). Thereafter, the edge portion of the bonded wafer is chamfered (step T3).

  Next, the active layer wafer of the bonded wafer is subjected to surface grinding to reduce the thickness of the active layer wafer (step T4). Subsequently, the ground surface of the active layer wafer is polished (primary polishing), and the thickness of the active layer wafer is adjusted to be slightly larger than the finished thickness (step T5). Then, the surface of the active layer wafer has a finishing roughness, and the surface of the active layer wafer is further polished (secondary polishing) so that the thickness of the active layer wafer becomes the finished thickness (step) T6). As described above, the active layer wafer is thinned by grinding and polishing (the polished active layer wafer is hereinafter referred to as “SOI layer”) to obtain an SOI wafer. Thereafter, the surface of the SOI wafer is cleaned (step T7).

FIG. 2 is a perspective view showing a configuration example of a polishing apparatus used for polishing a wafer, and FIG. 3 is a side view showing the vicinity of the wafer when the wafer is polished by the polishing apparatus of FIG.
This polishing apparatus 1 includes a support 2, a plurality of (four in the example of FIG. 2) suction plates 3 provided on the support 2, and a surface plate disposed above these suction plates 3. 4 is provided.

  The plurality of suction disks 3 are arranged at equiangular intervals (90 ° intervals in the example of FIG. 2) around a common central axis. Each suction disk 3 has a cylindrical shape, and has a circular suction surface 3a (see FIG. 3) that holds a wafer (for example, a bonded wafer) W by vacuum suction at the upper end. Each suction disk 3 rotates (rotates) around its central axis. The plurality of suction disks 3 are arranged such that these suction surfaces 3a are substantially on the same plane.

  The surface plate 4 has a disk shape, is disposed horizontally, and rotates around its central axis. In plan view, the entire plurality of suction disks 3 are included in the area of the surface plate 4. A polishing pad (polishing pad) 5 is provided on the lower surface of the surface plate 4, and the polishing pad 5 can polish the wafer W held on the suction surface 3a of the suction plate 3 (see FIG. 3). . During polishing, the suction plate 3 and the surface plate 4 rotate around their respective central axes.

  In such a manufacturing method, when the thickness of the supporting wafer is not uniform in the in-plane direction of the bonded wafer, the active layer wafer is polished so as to have a uniform thickness as a whole bonded wafer. However, the thickness of the SOI layer becomes non-uniform. In recent years, the demand for in-plane uniformity of the thickness of the SOI layer has become stricter.

  Usually, in the support wafer, only the surface on which the active layer wafer is to be bonded is polished (single-side polishing) before bonding, and the surface opposite to the bonding surface is not polished. By polishing the support wafer on both sides, it is possible to make the thickness of the support wafer uniform to some extent. When such a support wafer is used, it becomes easy to polish the active layer wafer so that the thickness of the SOI layer is uniform in the plane. In this case, the back surface (surface opposite to the SOI layer) of the obtained SOI wafer is a mirror surface.

  However, such an SOI wafer may be difficult to handle in a device process. For this reason, the supporting wafer is polished on one side, and the back surface of the SOI wafer needs to be an etched surface that is not polished. Therefore, on the premise that the thickness of the supporting wafer is not uniform in the in-plane direction of the wafer, the uniformity of the thickness of the SOI layer is obtained after grasping the distribution of the thickness of the supporting wafer. It is necessary to polish the active layer wafer appropriately.

  It is considered that the in-plane thickness distribution of the support wafer is measured before the step of bonding the support wafer and the active layer wafer (step T1). However, in that case, since the information of the in-plane thickness distribution has to be managed for at least the primary polishing process (steps T1 to T5) thereafter, it takes time and labor.

  Patent Document 1 discloses a method for polishing an SOI substrate in which the SOI substrate is polished from the active layer side to reduce the thickness of the active layer. In this method, the polishing pressure and the polishing time are controlled in accordance with the difference in thickness between the central portion and the outer peripheral portion of the active layer before polishing and the average value of the total thickness of the active layer before polishing. . This control is performed based on data for polishing control acquired in advance through experiments. As a result, an SOI substrate with improved in-plane uniformity of the layer thickness of the SOI layer is obtained.

JP 2004-22839 A

  However, in the method of Patent Document 1, the thickness control width of the SOI layer that can be adjusted by adjusting the polishing pressure and the polishing time is narrow, and the difference in thickness between the central portion and the outer peripheral portion of the active layer before polishing is narrow. Is large, it is difficult to obtain an SOI layer with improved in-plane uniformity of the layer thickness. When the polishing pressure is excessively increased or the polishing time is lengthened, the SOI layer is formed at the outermost periphery of the active layer. There is also a risk of roll-off and wafer cracking.

  The present invention has been made in view of such a situation, and an object of the present invention is to provide an SOI wafer manufacturing method capable of improving the in-plane uniformity of the thickness of the SOI layer.

The gist of the present invention is the following (1) SOI wafer manufacturing method.
(1) A method for manufacturing a bonded SOI wafer, in which an active layer wafer and a support wafer are bonded together through an oxide film to obtain a bonded wafer, and then the surface of the active layer wafer is polished to form a thin film. In
A first polishing treatment step of polishing the surface to be polished, which is the surface of the active layer wafer, by adsorbing and holding the surface of the support wafer after the bonding to a holding surface of a holding plate;
A second polishing step for polishing the surface of the active layer wafer by adsorbing and holding the surface of the support wafer after the first polishing step on a holding surface of a holding plate;
An active layer wafer thickness distribution measuring step for measuring a thickness distribution of the active layer wafer after the first polishing step and before the second polishing step;
Based on the measurement result of the wafer thickness distribution measuring step for the active layer, a holding surface shape adjusting step for adjusting the shape of the holding surface of the holding plate used in the second polishing process step,
A method for manufacturing an SOI wafer, comprising:

  In the bonded wafer, when the surface of the active layer wafer is polished, the polished surface is usually flat. Therefore, in the present invention, when the bonded wafer is held on the holding surface with sufficient flatness and the first polishing process is performed, the shape of the active layer wafer reflects the shape of the support wafer. For example, the shape is complementary to the shape of the support wafer. Specifically, for example, if the supporting wafer is thicker at the center than the periphery (hereinafter referred to as “convex shape”), the active layer wafer is compared to the periphery. If the thickness is thin at the center (hereinafter referred to as “concave shape”) and the supporting wafer is concave, the active layer wafer is convex.

  In the present invention, the thickness distribution of the active layer wafer after the first polishing process and before the second polishing process reflects the thickness distribution of the support wafer. Therefore, by carrying out the active layer wafer thickness distribution measurement step, the shape of the holding surface that can reduce or cancel the influence of the shape of the support wafer on the shape of the active layer wafer can be found. Therefore, the holding surface can be adjusted to such a shape in the holding surface shape adjusting step based on the measurement result of the active layer wafer thickness distribution measuring step. Thereby, the in-plane uniformity of the thickness of the wafer for active layers after a 2nd grinding | polishing processing process implementation can be improved.

  For example, if the support wafer has a convex shape, the holding surface of the holding plate is a concave surface that is the most concave at the center portion compared to the peripheral portion. The convex surface is the most protruding at the center. In these cases, when the surface of the support wafer in the bonded wafer is brought into close contact with the holding surface of the holding plate in the second polishing process step, if the support wafer has a convex shape (the holding surface is concave), the active layer wafer When the supporting wafer is concave (the holding surface is convex), the active layer wafer protrudes from the central portion as compared to the peripheral portion. In either case, the thickness of the active layer wafer increases as the protrusion amount increases.

  In this state, when the polishing surface of the active layer wafer is further polished (the second polishing process step is performed), the protruding portion of the active layer wafer, that is, the thicker portion, the larger the polishing amount. Therefore, this increases the in-plane uniformity of the thickness of the SOI layer.

It is a flowchart which shows the conventional manufacturing method of an SOI wafer. It is a perspective view which shows the structural example of a grinding | polishing apparatus. FIG. 3 is a side view showing the vicinity of a wafer when the wafer is polished by the polishing apparatus of FIG. 2. It is a flowchart which shows the manufacturing method of the SOI wafer based on one Embodiment of this invention. FIG. 4 is a cross-sectional view for explaining a manufacturing method of an SOI wafer according to the present invention when a supporting wafer has a convex shape, and is sucked and held by a suction disk when the first primary polishing step is performed. A bonded wafer is shown. It is a manufacturing method of the SOI wafer of this invention, Comprising: It is sectional drawing for demonstrating the manufacturing method in case a support wafer is convex shape, and shows the bonded wafer after implementing a 1st primary polishing process. It is a manufacturing method of the SOI wafer of this invention, Comprising: It is sectional drawing for demonstrating the manufacturing method in case a support wafer is convex shape, and shows the suction disk after implementing a 1st holding surface shape adjustment process . FIG. 4 is a cross-sectional view for explaining a manufacturing method of an SOI wafer according to the present invention when a supporting wafer has a convex shape, and is sucked and held by a suction disk when a second primary polishing step is performed. A bonded wafer is shown. It is a manufacturing method of the SOI wafer of this invention, Comprising: It is sectional drawing for demonstrating the manufacturing method in case a support wafer is convex shape, and shows the bonded wafer after implementing a 2nd primary grinding | polishing process. FIG. 5 is a cross-sectional view for explaining a manufacturing method of an SOI wafer according to the present invention when the supporting wafer has a concave shape, and is sucked and held by a suction disk when the first primary polishing step is performed. A bonded wafer is shown. It is a manufacturing method of the SOI wafer of this invention, Comprising: It is sectional drawing for demonstrating the manufacturing method in case a support wafer is concave shape, and shows the bonded wafer after implementing a 1st primary grinding | polishing process. It is a manufacturing method of the SOI wafer of this invention, Comprising: It is sectional drawing for demonstrating a manufacturing method in case a support wafer is concave shape, and shows the suction disk after implementing a 1st holding surface shape adjustment process . FIG. 4 is a cross-sectional view for explaining a manufacturing method of an SOI wafer according to the present invention when a supporting wafer has a concave shape, and is sucked and held by a suction disk when a second primary polishing step is performed. A bonded wafer is shown. It is a manufacturing method of the SOI wafer of this invention, Comprising: It is sectional drawing for demonstrating the manufacturing method in case a support wafer is concave shape, and shows the bonded wafer after implementing a 2nd primary grinding | polishing process. It is a top view which shows the measuring point of the thickness of an active layer in an SOI wafer. It is a figure which shows the deviation distribution of the thickness of an active layer when a 6-inch SOI wafer is manufactured with the conventional manufacturing method. It is a figure which shows the deviation distribution of the thickness of an active layer when a 6-inch SOI wafer is manufactured with the manufacturing method of this invention. It is a figure which shows the deviation distribution of the thickness of an active layer when an 8-inch SOI wafer is manufactured with the conventional manufacturing method. It is a figure which shows the deviation distribution of the thickness of an active layer when manufacturing an 8-inch SOI wafer with the manufacturing method of this invention.

  As described above, the method for manufacturing an SOI wafer of the present invention is as follows: “After the active layer wafer and the support wafer are bonded together through an oxide film to obtain a bonded wafer, the surface of the active layer wafer is polished. In the manufacturing method of the bonded SOI wafer to be thinned, the surface to be polished is the surface of the active layer wafer by sucking and holding the surface of the support wafer after the bonding to the holding surface of the holding plate A first polishing process step of polishing the surface, and a surface of the support wafer after the first polishing process step is adsorbed and held on a holding surface of a holding plate to polish the polished surface of the active layer wafer. 2 active treatment wafer thickness distribution measuring step of measuring the thickness distribution of the active layer wafer after the first polishing treatment step and before the second polishing treatment step, and the active layer wafer Thickness A method of manufacturing an SOI wafer including a holding surface shape adjusting step of adjusting a shape of the holding surface of the holding plate used in the second polishing process step based on a measurement result of a distribution measuring step. is there.

  FIG. 4 is a flowchart illustrating an SOI wafer manufacturing method according to an embodiment of the present invention. FIG. 5A to FIG. 5E are cross-sectional views for explaining a method for manufacturing an SOI wafer according to the present invention, in the case where the support wafer has a convex shape. 6A to 6E are cross-sectional views for explaining a method for manufacturing an SOI wafer according to the present invention, in the case where the supporting wafer has a concave shape.

  In this method, first, one surface (bonding surface 12a) of the active layer wafer 12 is opposed to one surface (bonding surface 11a) of the support wafer 11, and the support wafer 11 and the active layer wafer 12 are bonded. Bonding is performed (step S1). As the support wafer 11, a wafer whose surface is previously oxidized and covered with an oxide film is used. Therefore, the support wafer 11 and the active layer wafer 12 are bonded together via an oxide film (insulating film). Then, the bonded support wafer 11 and active layer wafer 12 (hereinafter referred to as “bonded wafer W”) are heat-treated for bonding strengthening (step S2). Thereafter, the edge portion of the bonded wafer W is chamfered (step S3).

  Next, the active layer wafer 12 of the bonded wafer W is subjected to surface grinding so that the active layer wafer 12 is thinned (step S4) and further polished. Hereinafter, the case where the bonded wafer W is polished using the polishing apparatus 1 shown in FIGS. 2 and 3 will be described as an example.

  It is assumed that the suction surface 3a of the suction disk 3 provided in the polishing apparatus 1 is sufficiently flat as compared to the in-plane variation in the thickness of the support wafer 11. As shown in FIGS. 5A, 5C, 5D, 6A, 6C, and 6D, in this embodiment, a groove 7 is formed on the suction surface 3a of the suction disk 3, and the groove 7 is interposed therebetween. By the sucked, the wafer can be adsorbed (vacuum adsorbed) on the adsorbing surface 3a. For example, the groove 7 may be a single groove formed in a spiral shape in a plan view.

  First, in the supporting wafer 11, the held surface 11b, which is the surface opposite to the bonding surface 11a, is sucked to the suction surface 3a of the suction disk 3 by vacuum suction to hold the bonded wafer W (FIG. 5A and FIG. 6A). At this time, the suction surface 3a and the held surface 11b are brought into close contact with each other. In this state, the surface 12b to be polished, which is the surface opposite to the bonding surface 12a, in the active layer wafer 12 is polished (step S5; first primary polishing step). The polished surface 12b that has been ground (step S4) has a high surface roughness. By the first primary polishing step, the surface roughness of the polished surface 12b is reduced.

  The thickness of the polished active layer wafer 12 is, for example, about 5 μm thicker than the final thickness (finished thickness) of the active layer wafer 12 (SOI layer). 5A and 6A, the surface after polishing (new surface to be polished 12b) is indicated by a broken line. The surface roughness of the polished surface 12b subjected to the primary polishing is larger than the surface roughness (finish roughness) of the polished surface 12 in the final SOI wafer. Here, the “primary polishing” includes not only polishing in the first primary polishing step but also polishing in second and third primary polishing described later.

  Next, the suction of the suction disk 3 is released, the bonded wafer W is removed from the suction disk 3, and the thickness of the active layer wafer 12 is measured at the center and the peripheral edge of the bonded wafer W ( Step S6: Wafer thickness distribution measuring step for active layer). As a measuring method, for example, Fourier transform infrared spectroscopy, optical interferometry, ellipsometry, or the like can be employed. 5B and 6B, the thickness measurement position in the active layer wafer 12 is indicated by an arrow.

  In the first primary polishing step, the cross-sectional shape of the active layer wafer 12 after polishing reflects the cross-sectional shape of the support wafer 11. That is, if the support wafer 11 is convex, the polished active layer wafer 12 is concave (see FIG. 5B), and if the support wafer 11 is concave, the polished active layer wafer 12 is It becomes a convex shape (see FIG. 6B).

  Therefore, the in-plane thickness distribution of the support wafer 11 can be estimated by performing the active layer wafer thickness distribution measurement step. For example, based on the result of the thickness measurement, from the thickness of the active layer wafer 12 at the peripheral portion of the bonded wafer W (hereinafter referred to as “active layer wafer peripheral portion thickness”), The value obtained by subtracting the thickness of the active layer wafer 12 in the central portion (hereinafter referred to as “active layer wafer central portion thickness”) is the thickness of the central portion of the support wafer 11 (hereinafter referred to as “support wafer central portion”). It can be estimated that the thickness of the peripheral edge of the support wafer 11 (hereinafter referred to as “support wafer peripheral edge thickness”) is subtracted from the “thickness”).

  In this case, if the value obtained by subtracting the active layer wafer central part thickness from the active layer wafer peripheral part thickness is a positive number, the value obtained by subtracting the support wafer peripheral part thickness from the support wafer central part thickness. Is a positive number. In addition, if the value obtained by subtracting the active layer wafer central part thickness from the active layer wafer peripheral part thickness is a negative number, the value obtained by subtracting the support wafer peripheral part thickness from the support wafer central part thickness is , Become a negative number. In this way, depending on whether the value obtained by subtracting the active layer wafer central portion thickness from the active layer wafer peripheral portion thickness is a positive number or a negative number, the support wafer peripheral portion thickness is changed from the support wafer central portion thickness. Since it is possible to determine whether the value obtained by subtracting the value is a positive number or a negative number, it is possible to determine whether the support wafer 11 has a convex shape or a concave shape (unevenness determination). .

  For this reason, based on the result of the unevenness determination, the shape of the suction surface 3a that cancels out (reduces) the influence of the shape of the support wafer 11 on the shape of the active layer wafer 12 is known. After all, if the thickness distribution of the active layer wafer 12 is known, the suction surface 3a is adjusted to a shape that cancels (reduces) the influence of the shape of the support wafer 11 on the shape of the active layer wafer 12 based on the thickness distribution. can do. In order to make the suction surface 3a of the suction disk 3 in such a shape, the suction surface 3a is polished based on the peripheral edge thickness of the active layer wafer and the central thickness of the active layer wafer (step S7; first holding). Surface shape adjustment process).

  Specifically, when the value obtained by subtracting the active layer wafer peripheral portion thickness from the active layer wafer central portion thickness is a negative number, the suction surface 3a is centered relative to the peripheral portion. The adsorption surface 3a is polished so as to be the most concave concave surface (see FIG. 5C), and a value obtained by subtracting the active layer wafer peripheral portion thickness from the active layer wafer central portion thickness is a positive number. In this case, the suction surface 3a is polished so that the suction surface 3a is a convex surface that protrudes most at the center compared to the peripheral edge (see FIG. 6C). At this time, it is desirable that the difference between the central thickness of the supporting wafer and the peripheral thickness of the supporting wafer be equal to the protruding amount or the recessed amount of the central portion with respect to the peripheral portion on the suction surface 3a.

  It is desirable that at least the portion near the suction surface 3a of the suction disk 3 is made of resin (for example, acrylic). In this case, the adsorption surface 3a can be easily formed into a desired convex shape or concave shape by polishing. As a method for forming in this way, a method for forming the surface of the wafer into a desired convex shape or a concave shape, for example, a pressure for pressing the polishing pad 5 (see FIG. 3) against the bonded wafer W, In addition, a known method for controlling the polishing time (see Patent Document 1) can be applied. In this case, the suction surface 3a can be formed by the polishing apparatus 1 itself, and it is not necessary to prepare another tool.

  Next, the bonded wafer W polished in the first primary polishing step is held on the suction surface 3a thus formed. At this time, the suction surface 3a and the held surface 11b are brought into close contact with each other. As a result, when the support wafer 11 has a convex shape (the suction surface 3a is concave), the periphery of the active layer wafer 12 protrudes from the center (see FIG. 5D), and the support wafer 11 has a concave shape (adsorption). In the case where the surface 3a is a convex surface, the central portion of the active layer wafer 12 protrudes from the peripheral portion (see FIG. 6D). That is, regardless of the shape of the support wafer 11, the active layer wafer 12 protrudes on the polished surface 12 b side as the thicker portion of the active layer wafer 12.

  In this state, the polished surface 12b of the active layer wafer 12 is polished to flatten the polished surface 12b (step S8; second primary polishing step). At this time, in the active layer wafer 12, the larger the protrusion amount, ie, the thicker the portion, the larger the polishing amount. Therefore, this polishing increases the in-plane uniformity of the thickness of the active layer wafer 12 (the SOI layer in the obtained SOI wafer). In FIG. 5D and FIG. 6D, the surface after polishing (new polished surface 12b) is indicated by a broken line.

  Thereafter, when the thickness (thickness distribution) of the active layer wafer 12 (SOI layer) is further adjusted (YES in step S9), steps S6 to S8 (second active layer wafer thickness distribution) are performed again. (Measurement step, second holding surface shape adjustment step, third primary polishing step) are performed. When the second holding surface shape adjusting step is performed, the pressure applied to the suction plate 3 by the surface plate 4 is finely adjusted as necessary with respect to the pressure in the first holding surface shape adjusting step. Thereby, the in-plane uniformity of the thickness of the active layer wafer 12 can be further increased. Steps S6 to S8 are further repeated as necessary.

When the thickness of the active layer wafer 12 is not further adjusted (NO in step S9), the active wafer is maintained while holding the bonded wafer W by the holding plate 3 when the primary polishing (step S8) is performed last. The surface of the layer wafer 12 is polished (step S10; secondary polishing step). By this polishing, the surface roughness of the active layer wafer 12 is reduced to the finish roughness, and the thickness of the active layer wafer 12 is adjusted to the finish thickness. As a result, the active layer wafer 12 becomes the SOI layer 13, and an SOI wafer Ws in which the SOI layer 13 is provided on the support wafer 11 is obtained (see FIGS. 5E and 6E).
Thereafter, the SOI wafer Ws is cleaned (step S11).

  According to the above method, the shape of the suction surface 3a of the suction plate 3 is adjusted so as to reduce or cancel the influence of the shape of the support wafer 11 on the shape of the active layer wafer 12. Therefore, this method can improve the in-plane uniformity of the thickness of the SOI layer 13. Further, according to the above method, the thickness distribution of the active layer wafer 12 is measured after the first primary polishing step. For this reason, it is necessary to measure the thickness distribution of the support wafer 11 before bonding the support wafer 11 and the active layer wafer 12 and to manage the information on a single wafer until the first primary polishing step is performed. Absent. Thereby, the time and labor required for management can be reduced.

  Each of an SOI wafer having a diameter of about 6 inches (about 150 mm) and an SOI wafer having a diameter of about 8 inches (about 200 mm) is manufactured by a conventional manufacturing method (see FIG. 1) and the manufacturing method of the present invention (see FIG. 4). And the thickness (film thickness) of the SOI layer was measured.

The primary polishing was performed using a polishing apparatus 1 (a batch type single-side polishing apparatus having a four-head structure) shown in FIG. The holding plate 4 was an acrylic plate, and the polishing pad 5 was polyurethane. An aqueous slurry containing an alkali containing abrasive grains (colloidal silica) as the main agent was used as the polishing liquid.
The thickness of the active layer wafer was measured by the FTIR method.

The secondary polishing was performed using a single-wafer single-side polishing apparatus (not shown) provided with a polishing cloth made of nonwoven fabric. As the polishing liquid, an aqueous slurry containing an alkali containing abrasive grains (colloidal silica having a smaller size than the colloidal silica of the polishing liquid used in the primary polishing) was used.
As a conventional manufacturing method, a primary polishing (thickness control) process is performed on an active layer wafer so that an SOI layer thickness of a predetermined target value is obtained, and then a single wafer type single-side polishing apparatus is used. Next polishing (surface finish) treatment was performed.

  In the manufacturing method of the present invention, in the thickness measurement of the wafer for active layer after the first primary polishing (thickness control) treatment, the absolute value of the value obtained by subtracting the peripheral portion thickness value from the central portion thickness value. When there was a difference of 0.05 μm or more, the holding plate was polished to adjust the shape. Thereafter, a second primary polishing (thickness control) process was performed on the active layer so that the SOI layer thickness had a predetermined target value. On the other hand, when the absolute value was less than 0.05 μm, the second primary polishing (thickness control) process was performed without adjusting the shape of the holding plate. Thereafter, a secondary polishing (surface finishing) treatment was performed using a single-wafer single-side polishing apparatus.

In FIG. 7, the film thickness measurement position in the SOI wafer Ws is indicated by a black circle. The film thickness measurement position is the SOI wafer Ws.
(i) center,
(ii) 4 points spaced 90 ° around the center at the periphery, and
(iii) The midpoint between the points (i) and (ii) above. That is, the thickness of the SOI layer was measured at 9 points for one SOI wafer Ws.

  The results are shown in FIGS. 8A, 8B, 9A, and 9B. These figures show a frequency distribution (hereinafter referred to as “film thickness”) of a measured film thickness deviation with respect to a target film thickness (target film thickness; indicated by a broken line in FIGS. 8A, 8B, 9A, and 9B). Deviation distribution ”). In these figures, the “target value for film thickness” has zero deviation. The measured SOI wafer contained both a convex wafer and a concave wafer.

  FIG. 8A shows a film thickness deviation distribution of an SOI wafer manufactured by a conventional manufacturing method and having a diameter of about 6 inches. The number of film thickness measurements was about 3000. FIG. 8B shows the film thickness deviation distribution of an SOI wafer manufactured by the manufacturing method of the present invention and having a diameter of about 6 inches. The number of film thickness measurements was about 2000. FIG. 9A shows a film thickness deviation distribution of an SOI wafer manufactured by a conventional manufacturing method and having a diameter of about 8 inches. The number of film thickness measurements was about 5000. FIG. 9B shows a film thickness deviation distribution of an SOI wafer manufactured by the manufacturing method of the present invention and having a diameter of about 8 inches. The number of film thickness measurements was about 600.

  As is clear from the comparison between FIG. 8A and FIG. 8B, the SOI wafer having a diameter of 6 inches has a film thickness deviation when manufactured by the method of the present invention as compared with the case of manufacturing by the conventional manufacturing method. Can be greatly reduced. Similarly, as apparent from the comparison between FIG. 9A and FIG. 9B, an SOI wafer having a diameter of 8 inches has a film thickness when manufactured by the method of the present invention as compared with the case of manufacturing by the conventional manufacturing method. Thickness deviation can be greatly reduced. From this result, it can be seen that the in-plane uniformity of the thickness of the SOI layer can be improved by the manufacturing method of the present invention, as compared with the conventional manufacturing method, regardless of the diameter of the SOI wafer.

3: suction plate, 3a: suction surface, 11: support wafer,
11a: bonding surface of support wafer, 11b: held surface of support wafer,
12: Wafer for active layer, 12a: Bonding surface of wafer for active layer,
12b: polished surface of wafer for active layer, W: bonded wafer,
Ws: SOI wafer

Claims (2)

In the method for manufacturing a bonded SOI wafer, the active layer wafer and the support wafer are bonded together via an oxide film to obtain a bonded wafer, and then the surface of the active layer wafer is polished and thinned.
A first polishing treatment step of polishing the surface to be polished, which is the surface of the active layer wafer, by adsorbing and holding the surface of the support wafer after the bonding to a holding surface of a holding plate;
A second polishing step for polishing the surface of the active layer wafer by adsorbing and holding the surface of the support wafer after the first polishing step on a holding surface of a holding plate;
An active layer wafer thickness distribution measuring step for measuring a thickness distribution of the active layer wafer after the first polishing step and before the second polishing step;
Based on the measurement result of the wafer thickness distribution measuring step for the active layer, a holding surface shape adjusting step for adjusting the shape of the holding surface of the holding plate used in the second polishing process step,
A method for manufacturing an SOI wafer, comprising: The active layer wafer thickness distribution measuring step includes a step of measuring a thickness of a central portion and a peripheral portion of the active layer wafer,
Based on the measurement result of the active layer wafer thickness distribution measurement step, the holding surface shape adjustment step subtracts the thickness of the peripheral portion of the active layer wafer from the thickness of the central portion of the active layer wafer. In the case where the value is a positive number, the wafer thickness distribution measurement for the active layer includes polishing the holding surface so that the holding surface becomes a convex surface protruding at the central portion as compared with the peripheral portion. When the value obtained by subtracting the thickness of the peripheral portion of the active layer wafer from the thickness of the central portion of the active layer wafer is a negative number based on the measurement result of the process, the holding surface is the peripheral portion 2. The method for manufacturing an SOI wafer according to claim 1, wherein the holding surface is polished so as to be a concave surface recessed at a central portion as compared with the first embodiment.

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