JP2015065473A - Wiring member, manufacturing method of the same, and manufacturing method of wiring member adhesion body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring member, which is adhered to various adherends without using flux and a special device, and a manufacturing method of the wiring member, and to provide a wiring member adhesion body obtained by using the wiring member and a manufacturing method of the wiring member adhesion body.SOLUTION: The invention provides a wiring member including: a conductive material; and a solder coating layer disposed in at least a part of a region on a surface of the conductive material and includes a non-eutectic solder material.

Description

  The present invention relates to a wiring member, a manufacturing method thereof, and a manufacturing method of a wiring member bonded body.

  The structure of the solar cell will be described with reference to FIG. FIG. 1 is a perspective view showing one embodiment of the structure of a solar cell. As shown in FIG. 1, a solar cell 200 includes a surface electrode (surface finger electrode) 103 for extracting power generated from a semiconductor substrate 101 (polycrystalline and single crystal Si cells), a back electrode 106, a surface It has a front electrode (bus bar electrode) 105 that collects the electric power extracted by the electrode 103 and a back electrode (bus bar electrode) 107 that collects the electric power extracted by the back electrode 106. Further, the wiring member 102 is bonded to the front electrode 105 and the back electrode 107 with solder 104. In the solar cell 200, the electric power generated in the semiconductor substrate 101 is transmitted to the outside through the wiring member 102.

  Recently, in order to simplify the solar cell manufacturing process, instead of using the solder 104 and the wiring member 102, a method of bonding using a wiring member in which a conductive material is previously coated with solder has been used (not shown). ). Such a wiring member includes a solder alloy layer on a part or the entire surface of a conductive material made of copper or the like.

  Eutectic solder is usually used for the solder alloy layer. The eutectic solder is a solder having a composition corresponding to the eutectic point of the alloy. The eutectic solder immediately melts at a temperature equal to or higher than its melting point, and solidification occurs immediately at a temperature equal to or lower than the melting point (see, for example, Patent Document 1).

  Conventionally, when bonding a wiring member to a front electrode or a back electrode, a flux is applied in advance to the wiring member, the front electrode, or the back electrode in order to improve wettability and provide adhesion between the wiring member and the electrode. There was a need to do. Another reason for applying the flux is that the oxide layer formed on the surface of the solder alloy layer of the wiring member is removed by etching. When the solder alloy layer is heated and melted, the oxide layer is again formed on the surface. For example, it is possible to suppress the formation. However, the flux corrodes the sealing material (EVA: ethylene vinyl acetate) for laminating solar cells used in the solar cell module manufacturing process, and tends to adversely affect long-term reliability.

  A method of bonding wiring members without using flux has also been proposed. For example, Patent Document 2 and Patent Document 3 disclose a friction soldering method and an ultrasonic soldering method.

JP 2002-263880 A Japanese Patent No. 3205423 Japanese Patent Laid-Open No. 9-216052

  When flux is used when bonding the wiring member, it is necessary to completely remove the flux after bonding the wiring member, but it is difficult to completely remove the flux. Further, the friction soldering method and the ultrasonic soldering method have a problem that a special apparatus is required.

  Therefore, an object of the present invention is to provide a wiring member that can be bonded to various adherends without using a flux and without using a special device, and a method for manufacturing the wiring member. Moreover, this invention makes it a subject to provide the wiring member adhesive body obtained using the said wiring member, and its manufacturing method.

The present invention includes the following aspects.
<1> A wiring member having a conductive material and a solder coating layer disposed in at least a part of the surface of the conductive material and including a non-eutectic solder material.

<2> The non-eutectic solder material is tin (Sn), copper (Cu), silver (Ag), bismuth (Bi), lead (Pb), aluminum (Al), titanium (Ti), and silicon (Si). The melting point is 450 ° C. or less, the zinc content is 1% by mass or less, the indium content is 1% by mass or less, and the solidus It is a wiring member as described in said <1> whose difference of temperature and liquidus temperature is 2 degreeC or more.

<3> The wiring according to <1> or <2>, wherein the conductive material includes at least one selected from the group consisting of copper (Cu), silver (Ag), gold (Au), and aluminum (Al). It is a member.

<4> The wiring member according to any one of <1> to <3>, wherein the conductive material is made of high-purity copper (Cu) having a purity of 99.99% or more.

<5> The wiring member according to any one of <1> to <4>, wherein an average thickness of the conductive material is 0.001 mm or more.

<6> The wiring member according to any one of <1> to <5>, which is a solar cell wiring member.

<7> A step of forming a conductive material into a long shape by rolling, injection, extrusion, or slit processing, and applying a non-eutectic solder material to at least a partial region of the surface of the long conductive material And forming a solder coating layer. The method for manufacturing a wiring member according to any one of <1> to <6>.

<8> The wiring member according to any one of <1> to <6> is applied to an adherend in a temperature range not lower than a solidus temperature of the non-eutectic solder material and not higher than a liquidus temperature. It is a manufacturing method of the wiring member adhesion object which has the process to adhere.

<9> The temperature range according to <8>, wherein the ratio of the liquid phase in the total amount of the non-eutectic solder material included in the solder coating layer is a temperature range of 30% by mass or more and less than 100% by mass. It is a manufacturing method of a wiring member adhesion object.

<10> The method for producing a bonded wiring member assembly according to <8> or <9>, which does not include an ultrasonic bonding step.

<11> Any one of the above <8> to <10>, wherein the adherend is at least one selected from the group consisting of an oxide, a metal covered with an oxide layer, glass, and oxide ceramics. It is a manufacturing method of the wiring member adhesion object given in.

<12> A bonded wiring member obtained by the production method according to any one of <8> to <11>.

  ADVANTAGE OF THE INVENTION According to this invention, the wiring member which can be adhere | attached on various to-be-adhered bodies, without using a flux and without using a special apparatus, and its manufacturing method can be provided. Moreover, according to this invention, the wiring member adhesion body obtained using the said wiring member and its manufacturing method can be provided.

It is a schematic perspective view which shows one form of the structure of a solar cell. It is a schematic sectional drawing which shows one form of a wiring member 3 is a cooling curve of the solder material X. It is sectional drawing, a perspective view, and an exploded perspective view which show one Embodiment of the manufacturing method of a solar cell module. It is a top view which shows one form of a double-sided electrode type solar cell module. It is a bottom view which shows one form of a double-sided electrode type solar cell module. It is a schematic plan view which shows one form of a back contact type solar cell. It is a perspective view which shows one form of AA cross-section structure in FIG. 6A. It is the schematic of the equipment for molten solder plating layer forming used for the manufacturing method of the wiring member of this embodiment.

  In this specification, the term “process” is not limited to an independent process, and is included in the term if the intended purpose of the process is achieved even when it cannot be clearly distinguished from other processes. . Moreover, the numerical range shown using "to" shows the range which includes the numerical value described before and behind "to" as a minimum value and a maximum value, respectively. Furthermore, the amount of each component in the composition means the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition.

<Wiring member>
The wiring member of the present invention includes a conductive material and a solder coating layer that is disposed in at least a part of the surface of the conductive material and includes a non-eutectic solder material. By including the non-eutectic solder material in the solder coating layer, it is possible to adhere to various adherends without using a flux and without using a special device. The wiring member is obtained, for example, by bringing a solder coating layer containing a non-eutectic solder material into contact with an adherend in a temperature range not lower than the solidus temperature of the non-eutectic solder material and not higher than the liquidus temperature. It is possible to bond to various adherends without using a flux and without using a special apparatus.

  The wiring member only needs to have a solder coating layer containing a non-eutectic solder material in at least a part of the surface of the conductive material. From the viewpoint of adhesiveness, the solder coating layer in the wiring member preferably covers at least one surface of the conductive material, and more preferably covers the entire surface of the conductive material.

  The shape of the wiring member is not particularly limited and can be appropriately selected according to the purpose. Specific examples of the shape of the wiring member include a rectangular shape, a ribbon shape, a long shape such as a round wire shape, a sheet shape, and a mesh shape. From the standpoint of continuous productivity and being able to be wound and packed in a reel shape, it is preferably a long shape, and more preferably a rectangular wire shape. The term “flat rectangular shape” as used herein means a long linear shape in which a cross section perpendicular to the longitudinal direction has a rectangular shape.

  An example of the configuration of the wiring member will be described with reference to the drawings. In addition, this invention is not restrict | limited at all by drawing. FIG. 2 shows one embodiment of the wiring member 10 and is a cross-sectional view in a cross section perpendicular to the longitudinal direction. In the wiring member 10 shown in FIG. 2, the conductive material 12 is composed of a flat wire conductor, and the cross-sectional outline thereof is a rounded rectangle (rounded rectangle). The solder coating layer 13 disposed so as to cover the periphery of the conductive material 12 has a rounded rectangular cross section, and the upper surface 13a and the lower surface 13b of the solder coating layer 13 are formed substantially flat. The thickness a of the wiring member 10 is measured as the distance between the upper surface 13a and the lower surface 13b of the solder coating layer 13.

  In the wiring member 10 illustrated in FIG. 2, the solder coating layer 13 is disposed on the entire surface of the conductive material 12, but the solder coating layer 13 is disposed in a part of the surface of the conductive material 12. May be. Further, the wiring member 10 is soldered so that it can be easily installed on an adherend (for example, the front surface electrode and the back surface electrode of the semiconductor substrate), and the heat conduction necessary for bonding is sufficiently ensured. The surface of the coating layer 13 is preferably formed flat. Or, since the surface of the covering layer is flat, it is easy to obtain a stable laminated state when the wiring member 10 configured as a flat wire is wound around a bobbin or the like, and is not easily collapsed. Therefore, there is a tendency that the wiring member is not entangled due to winding collapse and cannot be pulled out.

  The average thickness of the wiring member is not limited and can be appropriately selected according to the purpose. Specifically, the average thickness of the wiring member is preferably 0.001 mm or more, more preferably 0.001 mm to 1 mm, more preferably 0.002 mm to 0.8 mm, and 0.005 mm. More preferably, it is -0.5mm, It is especially preferable that it is 0.1mm-0.5mm, It is very preferable that it is 0.1mm-0.3mm. The thickness of the wiring member is the maximum length of the lengths in the short axis direction when a cross section perpendicular to the longitudinal direction of the long wiring member is observed. Specifically, it refers to the thickness a in FIG. The average thickness of the wiring member is obtained as an arithmetic average value of five thicknesses of the wiring member measured using a micrometer.

  The shape of the cross section perpendicular to the longitudinal direction of the wiring member is not particularly limited and can be appropriately selected according to the purpose. Examples of the shape of the cross section perpendicular to the longitudinal direction of the wiring member include a rectangular shape, an elliptical shape, and a circular shape. In particular, the cross-sectional shape is preferably a rounded rectangle as shown in FIG. 2 from the viewpoint of productivity and production cost.

The length in the direction perpendicular to the thickness direction (hereinafter also referred to as “width”) in the cross section perpendicular to the longitudinal direction of the wiring member is not particularly limited and is appropriately selected depending on the purpose and the like. The width of the wiring member is preferably 0.5 mm to 10 mm, for example, and more preferably 1 mm to 4 mm.
Furthermore, the length of the wiring member in the longitudinal direction is appropriately selected according to the purpose and is not particularly limited.

(Conductive material)
The wiring member has a conductor. The conductive material used for the wiring member preferably has a small volume resistivity (for example, about 1 × 10 ⁻⁵ Ωcm or less). Examples of such a conductive material include those containing copper (Cu), silver (Ag), gold (Au), aluminum (Al), and the like. By containing copper (Cu), silver (Ag), gold (Au), aluminum (Al), and the like, the volume resistivity can be kept small, which is preferable as a conductive material constituting the wiring member. That is, the conductive material preferably contains at least one metal selected from the group consisting of copper (Cu), silver (Ag), gold (Au), and aluminum (Al), and is made of Cu, Ag, Au, and Al. It is more preferable to contain 50% by mass or more of at least one metal selected from the group. Further, from the viewpoint of reducing the proof stress of the wiring member, it is more preferable to contain 90% or more Cu.

Examples of Cu contained in the conductive material include tough pitch Cu, low oxygen Cu, oxygen free Cu, phosphorus deoxidized Cu, and high purity Cu having a purity of 99.99% or more. In order to minimize the 0.2% proof stress of the conductive material, it is preferable to use Cu having a high purity, more preferably using a high purity Cu having a purity of 99.99% or more, and a purity having a purity of 99.9999% or more. It is particularly preferable to use high purity Cu. The 0.2% proof stress is a force that introduces 0.2% strain when pulled, and the smaller this value, the easier it is to stretch.
If tough pitch Cu or phosphorus deoxidized Cu is used as the conductive material, the wiring member can be configured at low cost.

  The shape of the conductive material is not particularly limited and is appropriately selected according to the purpose. Specific examples of the shape of the conductive material include a strip shape, a long shape such as a flat wire, a round wire, and an elliptical wire, and a joined shape of a plurality of conductors such as a flat shape, a sheet shape, and a mesh. The shape of the conductive material is preferably a rectangular wire from the viewpoint of ease of use when bonding to the adherend.

  The average thickness of the conductive material can be appropriately selected according to the application. The average thickness of the conductive material is preferably 0.001 mm or more from the viewpoint of productivity and the line resistance value in the longitudinal direction. Moreover, although there is no restriction | limiting in particular in an upper limit, it is preferable that it is 1 mm or less. Further, the average thickness of the conductive material is more preferably 0.002 mm to 0.8 mm, further preferably 0.005 mm to 0.5 mm, further preferably 0.1 mm to 0.5 mm, 0 It is particularly preferable that the thickness is 1 mm to 0.3 mm. The average thickness of the conductive material is obtained as an arithmetic average value obtained by measuring the thickness of five portions of the conductive material using a micrometer. In addition, the thickness of five portions of the conductive material is measured by observing a cross section perpendicular to the longitudinal direction of the wiring member, and the arithmetic average value is obtained.

  The conductive material may be obtained by producing a conductive material having a desired shape according to the purpose, or may be obtained by appropriately selecting from commercially available conductive materials.

  There is no restriction | limiting in particular as a manufacturing method of an electrically conductive material, According to the shape etc. of an electrically conductive material, it can select suitably. For example, the upcast method, the SCR method, the Hazeley method, the downcast method, the Propeltier method and the like can be mentioned. When the conductive material has a long shape, the long conductive material can be produced by, for example, rolling, injection processing, extrusion processing, or slit processing.

Furthermore, the following method is mentioned as a method of manufacturing a rectangular conductive material.
First, a flat plate made of a conductor such as copper is slit, or a rolled material (round shape) made of a conductor such as copper is rolled to form the conductor into a rectangular wire. Here, the rolling process is a method of rolling a round wire into a flat wire. If it is formed into a rectangular wire shape by rolling, a long and uniform width in the longitudinal direction can be formed. Slit processing can be applied to materials of various widths. In other words, even when the raw material conductors are not uniform in the longitudinal direction, even when various raw material conductors having different widths are used, they can be formed into a long and uniform width in the longitudinal direction by slit processing.
Next, the rectangular conductor material can be obtained by heat-treating the raw material conductor formed into a rectangular wire shape in a continuous energizing heating furnace, a continuous heating furnace, or a batch-type heating facility. This heat treatment step is performed for the purpose of improving the softness of the conductive material and reducing the 0.2% yield strength. Batch heating is preferred when stable heat treatment is required. From the viewpoint of preventing oxidation, it is preferable to use a furnace in a hydrogen reducing atmosphere for heat treatment in an inert gas atmosphere such as nitrogen or copper with less oxygen other than tough pitch copper. A furnace having an inert gas atmosphere or a hydrogen reduction atmosphere is provided by a continuous energizing heating furnace, a continuous heating furnace, or a batch heating facility.

(Solder coating layer)
The wiring member has a solder coating layer in at least a part of the surface of the conductive material. The solder material constituting the solder coating layer used includes a non-eutectic solder material. The solder material is preferably substantially composed of a non-eutectic solder material, and more preferably composed of a non-eutectic solder material. Here, “consisting essentially of a non-eutectic solder material” means allowing the presence of other components inevitably mixed.

  The non-eutectic solder material is a solder alloy in which the liquidus temperature and the solidus temperature do not match and there is a difference between the liquidus temperature and the solidus temperature. The difference between the liquidus temperature and the solidus temperature of the non-eutectic solder material is preferably 2 ° C or higher, more preferably 2 ° C or higher and 300 ° C or lower. From the viewpoint of workability, the difference is preferably 2 ° C. or more, more preferably the difference is 2 ° C. or more and 100 ° C. or less, and the difference is 5 ° C. or more and 100 ° C. or less. preferable. When the difference between the liquidus temperature and the solidus temperature is within the above range, the temperature at which the wiring member is bonded to the adherend can be easily controlled, and the soldering workability is excellent.

  The liquidus temperature and solidus temperature of the non-eutectic solder material are cooling curves obtained by measuring the temperature of the non-eutectic solder material when cooling the non-eutectic solder material in a molten state (liquid phase state). It can be confirmed by examining. Specifically, the liquidus temperature and the solidus temperature can be obtained by a tangent method based on a cooling curve.

For example, the liquidus temperature and the solidus temperature of the non-eutectic solder material X that draws the cooling curve shown in FIG. 3 are obtained as follows.
From the cooling curve obtained when cooling the non-eutectic solder material X in the liquid phase state, a linear region appearing when the non-eutectic solder material X in the liquid phase state is cooled (the region where the slope of the cooling curve is constant). , The same applies hereinafter), when drawing the first straight line A, the second straight line B extending the straight line region that appears when cooling the non-eutectic solder material X in the solid state, and the first straight line A The third straight line C obtained by extending the straight line region existing between the straight line region applied to the straight line region and the straight line region applied when the second straight line B is drawn is obtained.
At this time, the temperature at the intersection of the first straight line A and the third straight line C is defined as a liquidus temperature.
The temperature at the intersection of the second straight line B and the third straight line C is the solidus temperature.
The cooling curve of the non-eutectic solder material is obtained by a method capable of measuring the temperature change of the non-eutectic solder material over time, for example, a recorder to which a thermocouple is connected.
Further, the liquidus temperature and solidus temperature of the non-eutectic solder material can be set to a desired range by appropriately selecting the type and mixing ratio of the metal constituting the non-eutectic solder material.

The non-eutectic solder material may have a melting point of 450 ° C. or lower, preferably 96 ° C. or higher and 450 ° C. or lower, more preferably 96 ° C. or higher and 327 ° C. or lower, and 96 ° C. or higher and 232 ° C. or lower. Is more preferable.
In general, an alloy having a melting point exceeding 450 ° C. is called a brazing material. If such a high melting point brazing material is applied to an electronic circuit board or the like, it is not preferable because it requires heating at a high temperature for bonding, and may cause damage to the circuit or the like.

  The metal constituting the non-eutectic solder material is not particularly limited. Tin (Sn), Copper (Cu), Silver (Ag), Bismuth (Bi), Lead (Zn), Aluminum (Al), Titanium (Ti) in terms of higher adhesion and more appropriate material cost And two or more metals selected from the group consisting of silicon (Si).

  The non-eutectic solder material may further contain indium (In). Indium alone has adhesiveness to the adherend and is contained in the non-eutectic solder material, whereby the melting point of the non-eutectic solder material can be lowered. However, since indium is an expensive material, its use may be limited. Furthermore, it is known that the non-eutectic solder material contains indium, so that the durability of the formed solder layer is lowered, and may not be suitable for applications requiring long-term reliability of solder connection. is there. The content of indium in the non-eutectic solder material is preferably 1% by mass or less and preferably 0.5% by mass or less in the non-eutectic solder material from the viewpoint of long-term reliability of solder connection. More preferably, it is still more preferably 0.1% by mass or less.

  The non-eutectic solder material may further contain zinc (Zn). When the non-eutectic solder material contains zinc, it is considered that the oxygen atoms of the oxide existing on the surface of the adherend and zinc are combined, and the adhesion to the adherend is improved. However, when there is too much zinc content, wettability with a to-be-adhered body may fall depending on the case. Therefore, the non-eutectic solder material preferably has a zinc content of 1% by mass or less, and 0.5% by mass or less from the viewpoint of wettability with the adherend to be described later and adhesiveness with the adherend. It is more preferable that the content is 0.1% by mass or less. If the zinc content is 1% by mass or less, the non-eutectic solder material may contain zinc.

The non-eutectic solder material is tin (Sn), copper (Cu), silver (Ag), bismuth (Bi), lead (Pb), aluminum (Al), titanium from the viewpoint of adhesion to the adherend. It contains two or more metals selected from the group consisting of (Ti) and silicon (Si), has a melting point of 450 ° C. or less, and each of zinc (Zn) and indium (In) content is 1% by mass or less. The difference between the solidus temperature and the liquidus temperature is preferably 2 ° C. or higher.
More preferably, the non-eutectic solder material is tin (Sn), copper (Cu), silver (Ag), bismuth (Bi), lead (Pb), aluminum (Al), titanium (Ti) and silicon (Si). ), A melting point of 96 ° C. or more and 327 ° C. or less, a content ratio of zinc (Zn) and indium (In) of 0.5% by mass or less, and The difference between the solidus temperature and the liquidus temperature is 2 ° C. or higher and 100 ° C. or lower.
More preferably, the non-eutectic solder material is tin (Sn), copper (Cu), silver (Ag), bismuth (Bi), lead (Pb), aluminum (Al), titanium (Ti) and silicon (Si). ), Two or more metals selected from the group consisting of: a melting point of 96 ° C. to 232 ° C., and a content of zinc (Zn) and indium (In) of 0.1% by mass or less, respectively The difference between the solidus temperature and the liquidus temperature is 2 ° C. or higher and 100 ° C. or lower.

  The non-eutectic solder material may be a lead-containing solder material or a lead-free solder material. Specifically, examples of the lead-containing solder material include Sn—Pb, Sn—Pb—Bi, and Sn—Pb—Ag. Examples of the lead-free solder material include Sn—Ag—Cu, Sn—Ag, Sn—Cu, and Bi—Sn.

  It is also preferable that the non-eutectic solder material is a non-eutectic solder material that does not substantially contain lead from the viewpoint of dealing with environmental problems. Here, substantially free of lead means that the lead content in the non-eutectic solder material is 0.1% by mass or less, and the lead content is 0.05% by mass or less. preferable.

  The non-eutectic solder material may further contain other metal atoms as necessary. Other metal atoms are not particularly limited and can be appropriately selected according to the purpose. Specific examples of other metal atoms include manganese (Mn), antimony (Sb), potassium (K), sodium (Na), lithium (Li), barium (Ba), strontium (Sr), calcium (Ca), Magnesium (Mg), beryllium (Be), cadmium (Cd), thallium (Tl), vanadium (V), zirconium (Zr), tungsten (W), molybdenum (Mo), cobalt (Co), nickel (Ni), Examples thereof include lanthanoids such as gold (Au), chromium (Cr), iron (Fe), gallium (Ga), germanium (Ge), rhodium (Rh), iridium (Ir), and yttrium (Y). Further, when the non-eutectic solder material contains other metal atoms, the content of other metal atoms can be appropriately selected according to the purpose. For example, it can be 1% by mass or less in the non-eutectic solder material, and is preferably 0.5% by mass or less, preferably 0.1% by mass or less from the viewpoint of the melting point and the adhesion to the adherend. It is more preferable that

  The non-eutectic solder material may be a commercially available product having a desired composition, or may be manufactured by a commonly used manufacturing method. Specifically, a desired non-eutectic solder material can be produced by mixing the raw materials constituting the non-eutectic solder material at a predetermined ratio, melting the mixture, and then rapidly cooling it.

  In the wiring member, a solder coating layer containing a non-eutectic solder material is disposed in at least a part of the surface of the conductive material. The content rate with respect to the electrically conductive material of the solder coating layer in a wiring member is not restrict | limited, According to the objective etc., it selects suitably. From the viewpoint of adhesiveness, the content of the solder coating layer with respect to the conductive material is preferably 2% by mass or more, more preferably 3% by mass or more and 50% by mass or less, and more preferably 5% by mass or more and 40% by mass or less. More preferably it is. Further, the ratio of the coating area of the solder coating layer to the surface area of the conductive material in the wiring member is not particularly limited and is appropriately selected according to the purpose. The ratio of the covered area is preferably 75% or more, more preferably 90% or more, and further preferably 99% or more.

The thickness of the solder coating layer is not particularly limited. Generally, the thickness of the solder coating layer is preferably 5 μm to 100 μm, and more preferably 10 μm to 80 μm. The ratio of the thickness of the covering layer and the conductive material is not particularly limited. In general, the ratio of the thickness of the solder coating layer to the thickness of the conductive material (solder coating layer / conductive material) is preferably 0.025 to 0.5, and preferably 0.05 to 0.4. Is more preferable.
The thickness of the solder coating layer can be measured by observing a cross section perpendicular to the longitudinal direction using an optical microscope or an electron microscope.

  The solder coating layer may contain a flux as necessary. As the flux, a flux having relatively weak activity is preferable. Specific examples include rosin-based, RMA-based, and R-based fluxes.

  However, it is preferable that the solder coating layer contains substantially no flux. Since the solder coating layer does not substantially contain the flux, the step of drying the solvent in the flux can be omitted when the wiring member is bonded onto the adherend. Further, the flux cleaning step after bonding the wiring member on the adherend can be omitted. Further, the corrosive action of the adherend due to the flux can be prevented. Here, the phrase “substantially containing no flux” means that the total amount of flux contained in the solder coating layer is 2% by mass or less, and preferably 1% by mass or less.

(Use of wiring members)
The use of the wiring member of the present invention is not particularly limited, and can be used as a wiring member for solar cells, electroluminescence light emitting elements and the like. It is particularly suitable for use as a solar cell wiring member. In the conventional method of connecting the adherend and the wiring member, it was necessary to use a flux, but this flux tended to corrode solar cell members (such as a sealing material). When the wiring member of the present invention is used, it has an excellent effect of expressing good adhesion to an adherend without using a flux.

  Embodiments of the present invention include the use of a non-eutectic solder material as a wiring member having a conductive material and a solder coating layer that is disposed in at least a partial region of the surface of the conductive material and includes a non-eutectic solder material. Including. In addition, the embodiment of the present invention is used in bonding between a conductive material and an adherend of a wiring member having a solder coating layer disposed in at least a part of the surface of the conductive material and containing a non-eutectic solder material. including. Furthermore, according to an embodiment of the present invention, a wiring member having a conductive material and a solder coating layer disposed in at least a part of the surface of the conductive material and containing a non-eutectic solder material is used as a wiring member for a solar cell. including.

<Manufacturing method of wiring member>
The method for manufacturing a wiring member according to the present invention includes a step of forming a conductive material into a long shape by rolling, injection processing, extrusion processing, or slit processing, and at least a part of the surface of the long conductive material. Forming a solder coating layer by applying a non-eutectic solder material. The manufacturing method may further include other steps as necessary.

Details of the process of forming the conductive material into a long shape are as described above.
Although an example of the process of forming a solder coating layer on the surface of a long conductive material will be described with reference to the drawings, the present invention is not limited by these descriptions.

  In FIG. 7, a wiring member 25 in which a solder coating layer (not shown) is formed by supplying molten solder to the surface of the conductive material 12 using the hot dipping equipment 20 is manufactured. The hot dipping equipment 20 includes a feed reel 22 for sending out a long conductive material 12 made of a flat wire conductor or a round wire conductor, a solder bath (hot solder plating tank) 23 for maintaining a non-eutectic solder material in a molten state, A reversing roller 14 installed in the solder bath 23 to invert the conductive material 12 and facing upward, and a cooling unit installed outside the solder bath 23 and above the reversing roller 14 to cool the wiring member 25A on which the solder coating layer is formed. 26, a heating unit 30 for heating the wiring members 25A, which are installed in a plurality of stages above and below the cooling unit 26 and are each formed of a pair of left and right rollers, each having a solder coating layer. 30 is provided with a rolling roll 31 that is a pair of left and right rollers installed above 30, a lifting roller 32 that is installed at the top, and a take-up reel 33 that winds up the wiring member 25. .

In FIG. 7, the conductive material 12 is immersed in the solder bath 23, so that a non-eutectic solder material is supplied to the upper and lower surfaces and the side surfaces to form a solder coating layer, which is reversed by the reversing roller 24 and directed upward. Next, as shown in FIG. 7, the wiring member 25 </ b> A in which the formed solder coating layer is melted is fed into the cooling unit 26. In the cooling unit 26, for example, the solder coating layer of the wiring member 25A is brought into a solid state by cooling by blowing a gas of 50 ° C. or less. The cooling unit 26 is not limited to the case of blowing a gas of 50 ° C. or less. In the cooling unit 26, in order to prevent oxidation, it is possible to quickly solidify by blowing an inert gas or a mixed gas such as argon (Ar), neon (Ne), nitrogen (N ₂ ), etc. at a temperature below room temperature. It is desirable to increase efficiency.

In this state, since the solder coating layer of the wiring member 25A has a shape that bulges in the upper and lower surfaces of the conductive material 12 due to surface tension, a step of forming the solder coating layer flat is performed next. Here, “flat” means that the height difference of the unevenness with respect to the plating surface is 7 μm or less. The wiring member 25A having a solid solder coating layer is rolled by a plurality of stages of rolling rolls 27, 28, and 29, and further heated by the heating unit 30 and then rolled by the rolling roll 31, thereby flattening and final soldering. The wiring member 25 is adjusted in the thickness of the covering layer.
The wiring member 25 in which the thickness of the solder coating layer is adjusted is wound around the take-up reel 33 to form a roll body of the wiring member.

<Manufacturing Method of Wiring Member Adhesive>
In the method for producing a bonded wiring member of the present invention, the wiring member is bonded to an adherend in a temperature range not lower than the solidus temperature of the non-eutectic solder material and not higher than the liquidus temperature (hereinafter, (Also referred to as “adhesion step”). By adhering a wiring member having a solder coating layer containing a non-eutectic solder material to an adherend in a specific temperature range, various kinds of deposition can be performed without using a flux and using a special apparatus. Can be glued to the body.

  The wiring member bonded body is obtained by bonding the wiring member to the adherend in a temperature range not lower than the solidus temperature of the non-eutectic solder material of the wiring member and not higher than the liquidus temperature. The wiring member bonded body means a structure in which the wiring member is bonded to an adherend described later. The wiring member adhesive is heat-treated in a temperature range between the solidus temperature and the liquidus temperature of the non-eutectic solder material of the solder coating layer of the wiring member by bringing the wiring member into contact with the adherend. Thus, the solder coating layer can be directly adhered to the surface of various adherends (for example, adherends with oxides formed on the surface) without using flux or special ultrasonic bonding process. It is formed. The reason why such a wiring member bonded body is obtained is not clear, but is considered as follows, for example.

  In the temperature range above the solidus temperature and below the liquidus temperature, the non-eutectic solder material is in a state where the liquid phase and the solid phase can coexist. If a non-eutectic solder material is to be bonded at a temperature exceeding the liquidus temperature, that is, when the non-eutectic solder material is entirely in a liquid phase, the non-eutectic solder material in the liquid phase is elasticated by the surface tension. Therefore, it does not adhere to the adherend surface, particularly to the adherend surface on which the oxide is formed. In contrast, in the state where the non-eutectic solder material in the liquid phase and the non-eutectic solder material in the solid phase coexist, the non-eutectic in the liquid phase is present due to the presence of the non-eutectic solder material in the solid phase. The surface tension of the solder material is reduced, the repelling of the non-eutectic solder material is suppressed, and the wettability of the non-eutectic solder material as a whole is improved by the non-eutectic solder material in the liquid phase. It is considered that the solder coating layer adheres well to the surface.

  From the viewpoint of good adhesion and productivity of the wiring member bonded body, the wiring member bonded body has a solder coating layer in a temperature range higher than the solidus temperature and lower than the liquidus temperature, or exceeds the solidus temperature. It is preferable that the wiring member adhesive is bonded to the adherend in a temperature range below the liquidus temperature. More preferably, it is a wiring member bonded body in which the solder coating layer is bonded to the adherend in a temperature range exceeding the solidus temperature and lower than the liquidus temperature.

From the viewpoint of further improving the adhesiveness, it is preferable to adjust the ratio of the liquid phase to the solid phase in the solder coating layer of the wiring member at the time of bonding. Specifically, the bonding is preferably performed at a temperature such that the proportion of the liquid phase in the entire solder coating layer of the wiring member is 30% by mass or more and less than 100% by mass, and 35% by mass or more and 99% by mass or less. It is more preferable to bond at a temperature of 40% by mass or more and 98% by mass or less.
In addition, the ratio for which the liquid phase of the solder coating layer at the time of wiring member adhesion | attachment can be calculated | required from the equilibrium state figure of the solder composition to be used.

  The heat treatment method for adhering the wiring member to the adherend is not particularly limited, and a conventionally known method can be employed. For example, the adherend is heated with a hot plate or the like, a wiring member is placed on the adherend, and the temperature of the solder coating layer of the wiring member is controlled, and the soldering iron set at the same temperature as the hot plate is used. For example, a method of heat-treating the solder coating layer using a solder, a method of passing through a reflow furnace at a constant temperature in a state where the wiring member is placed on the adherend so that the solder coating layer is in contact, and the like.

  In the bonding step, it is preferable to bond the wiring member while pressing it against the adherend. Thereby, the solid phase in the solder coating layer of the wiring member is pressed against the adherend, and the adhesion is further improved. The pressing pressure can be set as appropriate. For example, the pressure is preferably 200 Pa to 5 MPa, and preferably 1 kPa to 2 MPa.

  In the bonding step, the heat treatment time is preferably 1 second or longer, more preferably 3 seconds or longer, and even more preferably 10 seconds or longer. Thereby, the solid phase in the solder coating layer is further brought into contact with the adherend, and the adhesion between the wiring member and the adherend is further improved.

(Adherent)
The adherend used in the method for producing a bonded wiring member of the present invention is not particularly limited. Examples thereof include an oxide adherend, a semiconductor substrate, and an electrode.

  The oxide adherend is not particularly limited as long as it has an oxide layer on at least a part or the entire surface thereof. Whether or not the oxide adherend has an oxide layer on the surface can be confirmed by energy dispersive X-ray analysis (EDX). For example, the oxide adherend is preferably selected from the group consisting of an oxide, a metal coated with an oxide layer, glass, and oxide ceramics.

  Examples of the oxide include indium tin oxide (ITO), silicon dioxide, chromium oxide, and boron oxide. Examples of the metal species in the metal covered with the oxide film include copper, iron, titanium, aluminum, silver, and stainless steel. The glass is not particularly limited, and examples thereof include alkali-free glass, quartz glass, low alkali glass, and alkali glass. Examples of oxide ceramics include alumina ceramics, zirconia ceramics, magnesia ceramics, and calcia ceramics.

  In addition, the wiring member adhesive formed using the wiring member can prevent the non-eutectic solder material from repelling the oxide layer even when the adherend is an oxide adherend. Good adhesion to the wiring member.

  As a semiconductor substrate, the silicon substrate which has a pn junction for solar cell formation, the silicon substrate used for a semiconductor device, the silicon carbide substrate used for the base material of a light emitting diode, etc. can be mentioned, for example.

  The electrode is formed, for example, by firing an electrode paste applied on the semiconductor substrate. Although there is no restriction | limiting in particular in the paste for electrodes, For example, what contains glass particle | grains, phosphorus containing copper alloy particle | grains, a solvent, and resin is mentioned. When an electrode is formed on a semiconductor substrate using such an electrode paste, a glass layer that is an oxide is formed on the surface during firing, and the formation of the glass layer suppresses oxidation of copper, and resistance A low rate electrode can be formed. The formed electrode preferably further contains tin. Tin may be contained in the phosphorus-containing copper alloy particles in the electrode paste, or may be contained as tin-containing particles separately from the phosphorus-containing alloy particles.

  The solder coating layer in the wiring member bonded body may be bonded to another wiring member, an electronic circuit element, or the like as necessary. That is, the wiring material bonded to the adherend may be bonded to another wiring member, an electronic circuit element, or the like via the solder coating layer. Since the solder coating layer is bonded to a wiring member, an electronic circuit element, or the like, the adherend and the wiring member, the electronic circuit element, or the like can be mechanically and electrically connected.

  Since the adherend and the wiring member are mechanically and electrically connected to each other, the wiring member adhesive body is an electronic circuit board or semiconductor substrate using a ceramic substrate or a glass substrate, a MEMS element, or an ITO film. And a part of a flat panel display element having an oxide conductive film such as IZO film as an electrode, brazing member of metal-glass-oxide ceramic-non-oxide ceramic, electric wiring, oxide wiring, etc. Can do.

<Solar cell and manufacturing method thereof>
The wiring member of this invention can be used as a wiring member for solar cells. Thereby, the solar cell using the said wiring member can be provided. That is, the solar cell according to the present embodiment includes a semiconductor substrate having an impurity diffusion layer and pn-junction, an electrode provided on the impurity diffusion layer, and the wiring member bonded on the electrode. In other words, the solar cell is a wiring member bonded body in which the wiring member and a semiconductor substrate for a solar cell which is an adherend are bonded.

  The manufacturing method of the solar cell concerning this embodiment is the same as the manufacturing method of the wiring member adhesion body which uses the said semiconductor substrate as a to-be-adhered body. In the method for manufacturing a solar cell, a semiconductor substrate having an impurity diffusion layer and having a pn junction is used, and an electrode is provided on the impurity diffusion layer. A solar cell substrate having a semiconductor substrate having an impurity diffusion layer and pn-junction and an electrode provided on the impurity diffusion layer may be a commercially available product or using an electrode paste as described above. Then, an electrode may be formed on a semiconductor substrate.

  Since an electrode on a semiconductor substrate used for manufacturing a solar cell often has an oxide layer on the surface, the solar cell may have a structure in which a wiring member is bonded onto the oxide layer. Many. In the method for manufacturing a solar cell using the wiring member of the present invention, it is not necessary to remove the oxide layer on the electrode surface with a flux or the like, so that the corrosive action of the electrode due to the flux can be prevented. Further, by not using a flux, when the solder layer is bonded onto the electrode, the step of drying the solvent in the flux can be omitted, and the solder layer is bonded onto the electrode. The subsequent flux cleaning step can be omitted. As a result, the electrode having the oxide layer on the surface and the wiring member are electrically connected, and a solar cell excellent in power generation performance is obtained.

<Solar cell module and manufacturing method thereof>
The solar cell module according to the present embodiment includes a semiconductor substrate having an impurity diffusion layer and pn-junction, an electrode provided on the impurity diffusion layer, and the wiring member bonded on the electrode. A plurality of batteries are connected via the wiring member. Moreover, sealing resin, protective glass, a protective film, etc. may be further laminated | stacked on the wiring member as needed.
The solar cell module can be manufactured by a known method. For example, it can manufacture with the manufacturing method of the solar cell module shown as an example below.

FIG. 4 is a cross-sectional view, a perspective view, and an exploded perspective view conceptually showing one embodiment of a method for manufacturing a solar cell module.
In FIG. 4A, the surface electrode 105 as a bus bar electrode, the surface electrode 103 as a finger bar electrode, the back electrode 106, and the back electrode 107 as a bus bar electrode are formed on the surface electrode 105 of the plurality of semiconductor substrates 101 and The wiring members 110 and 102 of the present invention are disposed on the back electrode 107. Furthermore, the front surface electrode 105 on one semiconductor substrate 101 and the back surface electrode 107 on the other semiconductor substrate 101 are connected by a wiring material 110 to form the stacked body 100.
4B, the narrow ceramic heater 21 having the same width and the same length as the wiring members 110 and 102 with respect to the semiconductor substrate 101 and the wiring members 110 and 102 arranged as shown in FIG. Is used to perform the first heating step to bond the front surface electrode 105 and the back surface electrode 107 to the wiring members 110 and 102, respectively. As a heating method, in addition to the method using the ceramic heater 21, a known method such as a hot plate, a heating oven, a ceramic heater, a nozzle heater, or IH (induction heating) can also be applied. The heating method is preferably a method using a ceramic heater 21 from the viewpoint of easier heating. In addition, heating can be easily performed by using a plurality of nozzle heaters that inject hot air from the nozzles in accordance with the width and length of the wiring members 110 and 102. For example, by using a narrow ceramic heater and nozzle heater, heat is transmitted more uniformly, and the adhesion between the front surface electrode 105 and the rear surface electrode 107 on the semiconductor substrate 101 and the wiring members 110 and 102 is improved.

  The heating temperature in the heating step is not particularly limited. In the present embodiment, as in the case of manufacturing the above-mentioned wiring member bonded body, a temperature not lower than the solidus temperature and not higher than the liquidus temperature of the non-eutectic solder material contained in the solder coating layer of the wiring members 110 and 102. In the range, it is preferable to adhere to the front electrode 105 and the back electrode 107 of the semiconductor substrate 101 which is an adherend. For example, the heating step is performed at 183 ° C. to 214 ° C.

  The heating time is preferably 1 second to 180 seconds, more preferably 2 seconds to 90 seconds, and particularly preferably 3 seconds to 30 seconds. When the heating time is 1 second or longer, the semiconductor substrate 101 as the adherend and the wiring members 110 and 102 tend to adhere sufficiently, and when the heating time is 180 seconds or shorter, the semiconductor substrate 101 as the adherend. Generation of warpage is suppressed, and the yield in solar cell production tends to be improved.

  During the heating process, a weight may be mounted on the semiconductor substrate 101 on which the wiring members 110 and 102 are disposed, or a pressurizing process may be simultaneously performed using the narrow ceramic heater 21. By performing pressure treatment during the heating process, heat can be transmitted more uniformly, and the wiring members 110 and 102 and the semiconductor substrate 101 can be connected while preventing the wiring members 110 and 102 from being distorted. The pressure to be applied is preferably 0.02 MPa to 5 MPa, more preferably 0.05 MPa to 3 MPa, and particularly preferably 0.1 MPa to 2 MPa. When the pressure is 0.2 MPa or more, heat is more easily transmitted, and the wiring members 110 and 102 can be firmly bonded to the semiconductor substrate 101. Moreover, it can suppress that the semiconductor substrate 101 cracks or a crack arises in the semiconductor substrate 101 as it is 5 Mpa or less.

  4C, the sealing resin 120 is laminated on both surfaces of the semiconductor substrate 101 to which the wiring member 110 is bonded, and a protective glass (tempered glass) 121 is provided on the sealing resin 120 on the light receiving surface side of the semiconductor substrate 101. A solar cell module is manufactured by performing a second heating step in which a protective film 122 is stacked on the sealing resin 120 on the back surface side of the semiconductor substrate 101 and heat-treated.

  The sealing resin 120 is preferably an ethylene / vinyl acetate copolymer resin (hereinafter referred to as “EVA”) or polyvinyl butyral from the viewpoints of transparency, flexibility, price, and the like. Further, the protective glass 121 preferably has one surface embossed. Examples of the protective film 122 include a fluororesin film and PET (polyethylene terephthalate or the like). From the viewpoint of weather resistance, water vapor barrier properties, electrical insulation, and the like, it is preferable to use various composite films for the protective film 122. As the composite film, for example, an insulating film / adhesive / water vapor barrier film / adhesive / weatherproof film laminated in this order from the semiconductor substrate 101 side can be used. PET film for electrical insulation is used as the electrical insulating film, aluminum foil, alumina, silica-deposited PET film is used as the water vapor barrier film, and fluororesin film, fluororesin coating film, heat-resistant low oligomer PET is used as the weather-resistant film. Each film can be applied.

  In the second heating step, a general hot plate or heating oven can be used. Moreover, the vacuum laminator which is an apparatus generally used for the sealing process of a solar cell element can be used. The vacuum laminator can be heated while applying a constant pressure of atmospheric pressure (0.1 MPa) by opening only the lid after vacuum degassing inside the chamber. From the viewpoint of preventing contamination, it is preferable to use a Teflon (registered trademark) sheet.

.
The heating temperature in the second heating step is not particularly limited as long as it does not affect the sealing resin 120 or the protective film 122 that is the back sheet. Generally, the heating temperature is preferably 80 ° C to 200 ° C, more preferably 110 ° C to 160 ° C, and particularly preferably 120 ° C to 150 ° C. When the heating temperature is 100 ° C. or higher, the fluidity and adhesiveness of EVA which is a sealing resin are sufficiently obtained, and a good sealing state is obtained. When the heating temperature is 160 ° C. or lower, the EVA and the back sheet tend to be able to suppress deterioration due to heat.

  The heating time in the second heating step is preferably 1 minute to 60 minutes, more preferably 3 minutes to 50 minutes, and particularly preferably 5 minutes to 30 minutes. When the heating time is 1 minute or longer, the temperature variation at the time of processing a plurality of solar cells does not increase, and the sealing resin is more uniformly polymerized, and a solar cell module in a favorable sealed state tends to be obtained. There is. Furthermore, when it is 1 minute or more, the curing of EVA of the sealing resin proceeds sufficiently, and the reliability tends to be further improved. Moreover, it is suppressed that a semiconductor substrate warps that heating time is 60 minutes or less, and there exists a tendency for the yield in manufacture of a solar cell module to improve more.

  Further, after the second heating step, additional heat treatment may be performed in order to complete the sealing more sufficiently. The additional heat treatment can be performed, for example, at 60 ° C. to 150 ° C. for 1 minute to 120 minutes using a heating oven.

  In addition, although the manufacturing method of the solar cell module using the solar cell element of the structure which has an electrode on both surfaces was described here, the solar cell module concerning this invention is not limited to this. As a solar cell element having a structure having electrodes on both sides, for example, a solar cell element shown in FIG. 5A is a plan view on the upper surface side, and FIG. 5B is a plan view on the lower surface side. In FIG. 5A, a surface electrode 103 that is a finger bar electrode and a surface electrode 105 that is a bus bar electrode are arranged on a semiconductor substrate 101. In FIG. 5B, a back electrode 106 and a back electrode 107 which is a bus bar electrode are arranged on the semiconductor substrate 101.

As a solar cell element other than the double-sided electrode type, for example, a back contact type solar cell element shown in a plan view in FIG. 6A and a perspective view in FIG. 6B can be given. The back contact type solar cell element is, for example, a current collecting grid that collects generated power on the light receiving surface side (indicated by an arrow in FIG. 6B) of a p type semiconductor substrate 1 having an n type diffusion layer 3 formed on the surface. A through-hole electrode 4 for flowing electricity collected by the collecting grid electrode 2 through the inside of the semiconductor substrate 1 to the back surface, and a back surface for collecting the power flowing through the through-hole electrode. It is a solar cell having a structure including an electrode 6 and a back electrode 7 formed on a p ⁺ -type diffusion layer 5 formed on the surface layer on the back surface.

  Since the solar cell manufactured using the wiring member of the present invention has high adhesive strength between the semiconductor substrate and the wiring member and can suppress cell cracking during bonding, the yield of the solar cell can be improved. .

  EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples. Unless otherwise specified, “part” and “%” are based on mass. In addition, the average thickness of the conductive material and the wiring member was obtained as an arithmetic average value by measuring the thickness at five locations with a micrometer.

<Example 1>
(Preparation of conductive material)
A Cu material (purity 99.99%) was rolled as a conductive material to produce a rectangular conductive material having a width of 1.5 mm and an average thickness of 0.2 mm.

(Preparation of non-eutectic solder material)
FIG. 7 shows an outline of a hot dipping equipment 20 which is an apparatus for manufacturing the wiring member of the present invention. The composition of the solder alloy that coats the conductive material of the wiring member of the present invention was controlled by the configuration of the metal ingot introduced into the solder bath 23 of FIG. That is, using a tin plate and a lead plate as a metal ingot, a non-eutectic solder material was prepared so as to be 10 parts of tin and 90 parts of lead.

  As a result of examining the cooling curve of the obtained solder alloy using a thermocouple and a pen recorder (Chart Recorder LR4200E manufactured by Yokogawa Electric Corporation), the liquidus temperature was 302 ° C. and the solidus temperature was 275 ° C.

(Production of wiring members)
Using the apparatus schematically shown in FIG. 7, the reversing roller 14 was placed in the solder bath 23 containing the solder alloy obtained above, the surface of which was covered with a non-oxidizing gas. The rectangular conductive material 12 is fed from the feed reel 22 and passed through the solder bath 23 from below the reversing roller 14, and is pulled up by the pulling roller 32, so that the entire surface of the conductive material is non-eutectic solder. The wiring member 1 was produced by forming a solder coating layer containing the material.
The obtained wiring member 1 had a width of 1.5 mm and an average thickness of 0.24 mm.

(Manufacture of tensile adhesive strength measuring terminals)
The wiring member 1 obtained above is cut into a length of 20 mm, bent to be L-shaped at 1.5 mm from one end, and further U-shaped at 3.5 mm from the other end. It was bent so that it was pulled, and this was used as a tensile adhesive strength measurement terminal.

(Preparation of adherend)
As the adherend, a semiconductor substrate for solar cells on which a back electrode (bus bar electrode) was formed was used.
A p-type semiconductor substrate having a film thickness of 190 μm having an n-type semiconductor layer, a texture, and an antireflection film (silicon nitride film) formed on the light receiving surface was prepared and cut into a size of 125 mm × 125 mm. Subsequently, a commercially available silver (Ag) paste (manufactured by DuPont, conductor paste Solamet PV1505) was printed on the back surface using a screen printing method so as to have an electrode pattern as shown on the back electrode 107 in FIG. 5B. The pattern of the back electrode was composed of a 4 mm wide bus bar, and the printing conditions (screen plate mesh, printing speed, printing pressure) were appropriately adjusted so that the film thickness after firing was about 5 μm. This was placed in an oven heated to 150 ° C. for 15 minutes, and the solvent was removed by evaporation.
Subsequently, heat treatment (baking) was performed at 800 ° C. for 3 seconds to 4 seconds in an infrared rapid heating furnace in an air atmosphere to form a back electrode. A silver-based oxide layer was formed on the surface of the obtained back electrode.

(Preparation of bonded wiring member)
Using the semiconductor substrate formed with the back electrode obtained above as an adherend, the adherend is heated on a hot plate (manufactured by ASONE Corp .; HP-1SA) until the temperature becomes constant. I had enough time. The temperature was measured on the surface of the adherend with a surface thermometer.
The tensile adhesive strength measuring terminal produced above is placed so that the surface of 1.5 mm in width and 1.5 mm in length bent into the L-shape is in contact with the back surface of the electrode, and is kept at the same temperature as the hot plate. Using a set soldering iron (RV-802AS manufactured by Taiyo Denki Sangyo Co., Ltd.), it was pressed and adhered to the back surface of the electrode for 3 seconds.
The temperature of the hot plate and the soldering iron was adjusted as shown in Table 1, and bonding was performed at each bonding temperature.

(Adhesive evaluation)
For adhesiveness, the tensile adhesion strength was measured according to the plating adhesion test method (JIS H8504) using a push-pull gauge (manufactured by Teclock: Push-pull gauge DDN-705-10). Evaluation was based on the evaluation criteria. A and B were accepted, and C and D were rejected.
-Evaluation criteria-
A: Tensile bond strength was 3 N / φ1.8 mm or more, and well adhered.
B: Bonding was performed at a tensile adhesive strength of 1.5 N / φ1.8 mm or more and less than 3 N / φ1.8 mm.
C: Bonding was performed with a tensile adhesive strength of less than 1.5 N / φ1.8 mm, but the bonding workability was difficult due to the fact that the solder was repelled, or the adhesive was bonded but the solid content was high.
D: It did not adhere (including states where it repels and does not adhere, solids do not adhere much, and it solidifies and does not adhere).
Table 1 shows the evaluation results of adhesion at each bonding temperature. In the following tables, “−” means not evaluated.

<Example 2>
In Example 1, the composition of the solder alloy used to fabricate the wiring member was changed from 10 parts tin and 90 parts lead to 20 parts tin and 80 parts lead to form a solder coating layer containing a non-eutectic solder material. The wiring member 2 thus prepared was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as in Example 1 except that this was used. The obtained non-eutectic solder material of the wiring member 2 was found to have a liquidus temperature of 280 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 1.

<Example 3>
In Example 1, the composition of the solder alloy used to manufacture the wiring member was changed from 10 parts tin and 90 parts lead to 30 parts tin and 70 parts lead, and a solder coating layer containing a non-eutectic solder material was obtained. The formed wiring member 3 was produced, and the adhesiveness at each bonding temperature was evaluated in the same manner as in Example 1 except that this was used. The obtained non-eutectic solder material of the wiring member 3 was found to have a liquidus temperature of 255 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 1.

<Example 4>
In Example 1, the composition of the solder alloy used to fabricate the wiring member was changed from 10 parts tin and 90 parts lead to 45 parts tin and 55 parts lead to form a solder coating layer containing a non-eutectic solder material. The wiring member 4 was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as in Example 1 except that this was used. The obtained non-eutectic solder material of the wiring member 4 was found to have a liquidus temperature of 227 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 2.

<Example 5>
In Example 1, the composition of the solder alloy used to fabricate the wiring member was changed from 10 parts tin and 90 parts lead to 50 parts tin and 50 parts lead to form a solder coating layer containing a non-eutectic solder material. The wiring member 5 was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as in Example 1 except that this was used. As a result of examining the cooling curve, the non-eutectic solder material of the wiring member 5 was found to have a liquidus temperature of 214 ° C. and a solidus temperature of 183 ° C. The results are shown in Table 2.

<Example 6>
In Example 1, the composition of the solder alloy used to manufacture the wiring member was changed from 10 parts tin and 90 parts lead to 60 parts tin and 40 parts lead to form a solder coating layer containing a non-eutectic solder material. The wiring member 6 was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as in Example 1 except that this was used. The obtained non-eutectic solder material of the wiring member 6 was found to have a liquidus temperature of 188 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 3.

<Example 7>
In Example 6, the composition of the solder alloy used to manufacture the wiring member was changed from tin 60 parts and lead 40 parts to tin 63 parts and lead 37 parts to form a solder coating layer containing a non-eutectic solder material. The wiring member 7 was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as above except that this was used. The obtained non-eutectic solder material of the wiring member 7 was found to have a liquidus temperature of 185 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 3.

<Example 8>
In Example 6, the composition of the solder alloy used to manufacture the wiring member was changed from tin 60 parts and lead 40 parts to tin 70 parts and lead 30 parts to form a solder coating layer containing a non-eutectic solder material. The wiring member 8 was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as above except that this was used. The obtained non-eutectic solder material of the wiring member 8 was found to have a liquidus temperature of 192 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 3.

<Example 9>
In Example 6, the composition of the solder alloy used to manufacture the wiring member was changed from tin 60 parts and lead 40 parts to tin 80 parts and lead 20 parts to form a solder coating layer containing a non-eutectic solder material. The wiring member 9 was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as above except that this was used. The obtained non-eutectic solder material of the wiring member 10 was found to have a liquidus temperature of 205 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 4.

<Example 10>
In Example 6, the composition of the solder alloy used to manufacture the wiring member was changed from tin 60 parts and lead 40 parts to tin 90 parts and lead 10 parts to form a solder coating layer containing a non-eutectic solder material. The wiring member 10 was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as above except that this was used. The obtained non-eutectic solder material of the wiring member 10 was found to have a liquidus temperature of 218 ° C. and a solidus temperature of 183 ° C. as a result of examining the cooling curve. The results are shown in Table 4.

<Example 11>
In Example 1, the composition of the solder alloy used for the production of the wiring member was changed from 10 parts tin and 90 parts lead to 42 parts tin and 58 parts bismuth, and a solder coating layer containing a non-eutectic solder material The wiring member 11 formed with was prepared, and the adhesiveness at each bonding temperature was evaluated in the same manner as above except that this was used. The obtained non-eutectic solder material of the wiring member 11 was found to have a liquidus temperature of 141 ° C. and a solidus temperature of 139 ° C. as a result of examining the cooling curve. The results are shown in Table 5.

<Example 12>
In Example 11, the composition of the solder alloy used for the production of the wiring member was further changed from 42 parts tin and 58 parts bismuth to 42 parts tin, 57 parts bismuth and 1 part silver. The wiring member 12 on which the solder coating layer was formed was prepared, and the adhesion at each bonding temperature was evaluated in the same manner as above except that this was used. The obtained non-eutectic solder material of the wiring member 12 was found to have a liquidus temperature of 140 ° C. and a solidus temperature of 138 ° C. as a result of examining the cooling curve. The results are shown in Table 5.

<Example 13>
In Example 11, the composition of the solder alloy used for manufacturing the wiring member was changed from 42 parts tin and 58 parts bismuth to 61 parts tin and 39 parts bismuth, and a solder coating layer containing a non-eutectic solder material was obtained. The formed wiring member 13 was produced, and the adhesiveness at each bonding temperature was evaluated in the same manner as described above except that this was used. The obtained non-eutectic solder material of the wiring member 13 was found to have a liquidus temperature of 177 ° C. and a solidus temperature of 138 ° C. as a result of examining the cooling curve. The results are shown in Table 6.

<Example 14>
In Example 11, the composition of the solder alloy used for manufacturing the wiring member was changed from 42 parts tin and 58 parts bismuth to 56 parts tin and 44 parts bismuth, and a solder coating layer containing a non-eutectic solder material was obtained. The formed wiring member 14 was produced, and the adhesiveness at each bonding temperature was evaluated in the same manner as described above except that this was used. The obtained non-eutectic solder material of the wiring member 14 was found to have a liquidus temperature of 167 ° C. and a solidus temperature of 138 ° C. as a result of examining the cooling curve. The results are shown in Table 6.

<Example 15>
In Example 12, the composition of the solder alloy used for manufacturing the wiring member was changed from 42 parts tin and 58 parts bismuth to 52 parts tin and 48 parts bismuth, and a solder coating layer containing a non-eutectic solder material was obtained. The formed wiring member 15 was produced, and the adhesiveness at each bonding temperature was evaluated in the same manner as described above except that this was used. The obtained non-eutectic solder material of the wiring member 15 was found to have a liquidus temperature of 158 ° C. and a solidus temperature of 138 ° C. as a result of examining the cooling curve. The results are shown in Table 6.

<Comparative Example 1>
In Example 1, the composition of the solder alloy used to fabricate the wiring member was changed from 10 parts tin and 90 parts lead to 62 parts tin and 38 parts lead to form a solder coating layer containing a eutectic solder material The obtained wiring member S1 was obtained, and the adhesiveness at each bonding temperature was evaluated in the same manner as in Example 1 except that this was used. As a result of examining the cooling curve of the obtained solder alloy of the wiring member S1, the liquidus temperature and the solidus temperature cannot be separated and both show 183 ° C., and the difference between the solidus temperature and the liquidus temperature is The eutectic solder material was less than 2 ° C. The results are shown in Table 1.

  As shown in Tables 1-6, the wiring member using the non-eutectic solder alloy having a difference between the solidus temperature and the liquidus temperature of 2 ° C. or more as the solder coating layer covering the conductive material of the wiring member is: By adhering to the adherend at a temperature not lower than the solidus temperature and not higher than the liquidus temperature without using a flux or a special apparatus, it was possible to bond with excellent adhesion.

<Example 16>
In Example 5, the same procedure as in Example 5 was performed except that the adherend was changed from a semiconductor substrate for solar cells to quartz glass (manufactured by Shin-Etsu Chemical Co., Ltd., synthetic quartz glass, the surface being a normal glass surface). When the adhesion temperature and the adhesion were evaluated, it was found that the same adhesion as in Example 5 was exhibited.

<Example 17>
In Example 5, the adhesion temperature was changed in the same manner as in Example 5 except that the adherend was changed from a semiconductor substrate for solar cells to an ITO (indium tin oxide) film formed by vapor deposition on non-alkali glass. As a result of evaluation of adhesiveness, it was found that, as in Example 5, the adhesiveness was exhibited at a temperature not lower than the solidus temperature of the solder material and not higher than the liquidus temperature.

<Example 18>
In Example 5, the adhesion temperature and the adhesiveness were evaluated in the same manner as in Example 5 except that the adherend was changed from a semiconductor substrate for solar cells to alumina ceramics (oxide ceramics). Similar to Example 5, it was found that good adhesion was exhibited at a temperature not lower than the solidus temperature of the solder material and not higher than the liquidus temperature.

<Example 19>
In Example 5, except that the adherend was changed from a semiconductor substrate for solar cells to a copper plate, the adhesion temperature and the adhesiveness were evaluated in the same manner as in Example 5. As in Example 5, It was found that good adhesiveness was exhibited at temperatures above the solidus temperature of the solder material and below the liquidus temperature. The surface of copper is covered with an oxide film made of copper oxide. In a normal soldering operation, an appropriate flux is applied for the purpose of removing the oxide film, and the solder is removed after the soldering operation. There is a need to. In the wiring member bonded body of the present invention, it is not necessary to apply flux, and the flux cleaning step can be omitted.

<Example 20>
(A) Preparation of electrode paste composition for forming adherends Phosphorus-containing copper alloy particles containing 7% by mass of phosphorus are prepared, dissolved and powdered by a water atomization method, and then dried. And classified. The classified powders were blended and subjected to deoxygenation / dehydration treatment to prepare phosphorus-containing copper alloy particles containing 7% by mass of phosphorus (hereinafter sometimes abbreviated as “Cu7P”). The particle diameter (D50%) of the phosphorus-containing copper alloy particles was 5 μm.

3 parts of silicon dioxide (SiO ₂ ), 60 parts of lead oxide (PbO), 18 parts of boron oxide (B ₂ O ₃ ), 5 parts of bismuth oxide (Bi ₂ O ₃ ), 5 parts of aluminum oxide (Al ₂ O ₃ ), A glass composed of 9 parts of zinc oxide (ZnO) (hereinafter sometimes abbreviated as “G1”) was prepared.
The obtained glass G1 had a softening point of 420 ° C. and a crystallization temperature of over 600 ° C.
By using the obtained glass G1, glass particles having a particle diameter (D50%) of 1.7 μm were obtained.

  56.1 parts of the phosphorus-containing copper alloy particles Cu7P obtained above, 29.0 parts of tin particles (Sn; particle diameter (D50%) 10.0 μm; purity 99.9% or more), and glass G1 particles A paste composition for electrodes is prepared by mixing 13.2 parts and 13.2 parts of a terpineol (isomer mixture) solution containing 3% by mass of ethylcellulose (EC, weight average molecular weight 190,000) and stirring in an agate mortar for 20 minutes. Cu7PG1 was prepared.

(B) Production of electrode having oxide layer on surface as adherend Using screen printing method on a semiconductor silicon substrate, electrode paste composition Cu7PG1 obtained above is shown in the output extraction electrode of FIG. It printed so that it might become such an electrode pattern. Printing conditions (screen plate mesh, printing speed, printing pressure) were appropriately adjusted so that the electrode pattern had a width of 4 mm and a film thickness after firing of 15 μm. This was placed in an oven heated to 150 ° C. for 15 minutes, and the solvent was removed by evaporation.
Subsequently, heat treatment (firing) was performed at 600 ° C. for 10 seconds in an infrared rapid heating furnace in an air atmosphere to obtain an output extraction electrode. On the surface of the obtained output extraction electrode, a Sn—PO system glass oxide layer and a copper system oxide layer were formed. Confirmation of the Sn-PO-based glass oxide layer and the copper-based oxide layer was performed using an energy dispersive X-ray analyzer (Hitachi scanning electron microscope SU1510).

(C) Preparation of solder and wiring member Using bar solder (Sn 50 mass% -Pb 50 mass%; manufactured by Shin-Fuji Burner Co., Ltd.) and plate lead (Pb; manufactured by Keiyo Sangyo Co., Ltd.), 10 parts of tin and It was weighed to 90 parts of lead, then melted at 450 ° C. in a graphite crucible, poured into a mold and rapidly cooled to obtain a solid solder 1. As a result of examining the cooling curve, the obtained solder 1 had a liquidus temperature of 302 ° C. and a solidus temperature of 275 ° C. A wiring member was prepared in the same manner as in Example 1.

(D) Evaluation of adhesiveness The adhesiveness was evaluated by the same method as in Example 1. The results are shown in Table 7. In addition, when it connected by changing the temperature of a hotplate and a soldering iron to 200-300 degreeC, when connecting at 280-300 degreeC, it turned out that the outstanding adhesiveness is shown. That is, when the wiring member of the present invention was used, it was found that excellent adhesion was exhibited even when an electrode having an oxide layer on the surface was used as the adherend.

  When the wiring member having non-eutectic solder as a solder coating layer was bonded to the electrode at a temperature not lower than the solidus temperature and not higher than the liquidus temperature as described above, excellent adhesion was exhibited.

<Example 21>
[Production of solar cells]
A p-type semiconductor substrate having a film thickness of 190 μm having an n-type semiconductor layer, a texture, and an antireflection film (silicon nitride film) formed on the light receiving surface was prepared and cut into a size of 125 mm × 125 mm. A silver electrode paste composition (manufactured by DuPont, conductor paste Solomet 159A) was printed on the light receiving surface using a screen printing method so as to have an electrode pattern as shown in FIG. 5A. The electrode pattern consists of a finger bar electrode 103 with a width of 150 μm and a bus bar electrode 105 with a width of 1.1 mm, and printing conditions (screen plate mesh, printing speed, printing pressure) so that the film thickness after baking is about 5 μm. Was adjusted appropriately. This was placed in an oven heated to 150 ° C. for 15 minutes, and the solvent was removed by evaporation.

Subsequently, an aluminum electrode paste (PVG Solutions Inc.
Similarly, Solar Cell Paste (Al) HyperBSF Al Paste) was printed on the entire surface except for the portion where the back electrode 107 as a bus bar electrode was formed as shown in FIG. 5B. The printing conditions were appropriately adjusted so that the film thickness after firing was 40 μm. This was placed in an oven heated to 150 ° C. for 15 minutes, and the solvent was removed by evaporation.
Further, a heat treatment (baking) was performed at 850 ° C. for 2 seconds in an infrared rapid heating furnace in the air atmosphere to obtain a light receiving surface electrode (front surface electrodes 103 and 105) and a current collecting electrode (back surface electrode) 106.

Next, using the screen printing method on the back surface, the electrode paste composition Cu7PG1 obtained in Example 20 was printed so as to have an electrode pattern as shown in the back electrode 107 which is the bus bar electrode in FIG. 5B. The electrode pattern was composed of a bus bar having a width of 4 mm, and the printing conditions (screen plate mesh, printing speed, printing pressure) were appropriately adjusted so that the film thickness after firing was 15 μm. This was placed in an oven heated to 150 ° C. for 15 minutes, and the solvent was removed by evaporation.
Subsequently, heat treatment (firing) was performed at 600 ° C. for 10 seconds in an infrared rapid heating furnace in an air atmosphere to obtain an output extraction electrode. On the back electrode 107 which is the obtained bus bar electrode, an Sn—P—O-based glass oxide layer and a copper-based oxide layer were formed.

  Next, the wiring member 5 produced in Example 5 was bonded at 200 ° C. on the surface electrode 105 as the bus bar electrode and the back electrode 107 as the bus bar electrode obtained above. Thereafter, it was cooled to produce a desired solar cell.

[Evaluation of power generation performance as solar cells]
Evaluation of the solar cell produced in Example 21 was performed by using WXS-155S-10 manufactured by Wacom Denso Co., Ltd. as pseudo-sunlight, and IV CURVE TRACER MP-160 (EKO) as a current-voltage (IV) evaluation measuring instrument. INSTRUMENT (manufactured by INSTRUMENT) was used in combination.

  As the power generation performance of the solar cell, Eff (conversion efficiency), FF (fill factor), Voc (open circuit voltage) and Jsc (short circuit current) are JIS-C-8912, JIS-C-8913 and JIS-C-8914, respectively. Measured according to In addition, each measured value is obtained by using the wiring member S1 obtained in Comparative Example 1 as a wiring member, and commercially available silver (Ag) paste (made by DuPont, conductor paste Solamet PV1505, fired on the back electrode as a bus bar electrode. The temperature was 800 ° C.), and the measured value of the solar cell obtained in the same process as in Example 21 was converted to a relative value with 100.0. Then, the conversion efficiency was 99.7%, the fill factor was 97.8%, the open-circuit voltage was 100.2%, and the short-circuit voltage was 101.0%, indicating that good power generation performance was exhibited. When bonding the wiring member S1 to the output extraction electrode, the bonding was performed after applying the flux of RMA.

The disclosures of Japanese Patent Application No. 2011-162598, Japanese Patent Application No. 2011-176882 and Japanese Patent Application No. 2011-263043 are incorporated herein by reference in their entirety.
All documents, patent applications, and technical standards mentioned in this specification are to the same extent as if each individual document, patent application, and technical standard were specifically and individually stated to be incorporated by reference, Incorporated herein by reference.

Reference Signs List 1 p-type semiconductor substrate 2 current collecting grid electrode 3 n-type diffusion layer 4 through-hole electrode 5 p ⁺ -type diffusion layers 6 and 7 back electrode 10 wiring member 12 conductive material 13 covering layer 13a upper surface 13b lower surface 14 reverse roller 20 hot dipping Equipment 21 Ceramic heater 22 Delivery reel 23 Solder bath 24 Reversing rollers 25, 25A Wiring member 26 Cooling unit 27, 28, 29, 31 Rolling roll 30 Heating unit 32 Lifting roller 33 Take-up reel 100 Laminate 101 Semiconductor substrate 102, 110 Wiring Members 103 and 105 Front surface electrodes 106 and 107 Back surface electrode 120 Sealing resin 121 Protective glass 122 Protective film 200 Solar cell

The present invention includes the following aspects.
<1> and the conductive material, the disposed on at least a portion of the area of the conductive material surface, have a, a solder coating layer containing a non-eutectic solder material, the non-eutectic solder materials, Sn-Pb, The wiring member is a non-eutectic solder material of Sn—Pb—Bi, Sn—Pb—Ag, Sn—Cu, or Bi—Sn .

<2> The wiring member according to <1>, wherein the non-eutectic solder material has a melting point of 96 ° C. or higher and 450 ° C. or lower .
<3> The wiring member according to <1> or <2>, wherein the non-eutectic solder material has a difference between a liquid crystal line temperature and a solidus line temperature of 2 ° C. or more and 300 ° C. or less.
<4> The non-eutectic solder material is a Sn-Pb non-eutectic solder material, and the content ratio of Sn and Pb (Sn-Pb) is 10% -90% -60% -40% and 63%. It is a wiring member as described in any one of said <1>-<3> which exists in the range of -37% -90% -10%.
<5> The non-eutectic solder material is a Sn-Bi non-eutectic solder material, and the mass ratio of Sn to Bi (Sn-Bi) is in the range of 52% -48% to 61% -39%. The wiring member according to any one of <1> to <4>.

< 6 > The conductive material includes at least one selected from the group consisting of copper (Cu), silver (Ag), gold (Au), and aluminum (Al) , and any one of <1> to < 5 >. a wiring member according to One.

< 7 > The wiring member according to any one of <1> to < 6 >, wherein the conductive material is made of high-purity copper (Cu) having a purity of 99.99% or more.

< 8 > The wiring member according to any one of <1> to < 7 >, wherein an average thickness of the conductive material is 0.001 mm or more.

< 9 > The wiring member according to any one of <1> to < 8 >, which is a wiring member for a solar cell.

< 10 > A step of forming a conductive material into a long shape by rolling, injection, extrusion, or slitting, and a non-eutectic solder material is applied to at least a partial region of the surface of the long conductive material. And forming a solder coating layer. The method for manufacturing a wiring member according to any one of <1> to < 9 >.

< 11 > The wiring member according to any one of <1> to < 9 > is applied to an adherend in a temperature range not lower than the solidus temperature of the non-eutectic solder material and not higher than the liquidus temperature. It is a manufacturing method of the wiring member adhesion object which has the process to adhere.

<12> The temperature range is the ratio of the liquid phase in the total amount of non-eutectic solder material contained in the solder coating layer is at a temperature range of less than 30 wt% to 100 wt% the <11> according to It is a manufacturing method of a wiring member adhesion object.

< 13 > The method for producing a bonded wiring member assembly according to < 11 > or < 12 >, which does not include an ultrasonic bonding step.

< 14 > Any one of the above < 11 > to < 13 >, wherein the adherend is at least one selected from the group consisting of an oxide, a metal covered with an oxide layer, glass, and oxide ceramics. It is a manufacturing method of the wiring member adhesion object given in.

< 15 > A bonded wiring member obtained by the production method according to any one of < 11 > to < 14 >.

Claims (12)

Conductive material;
A solder coating layer disposed in at least a portion of the surface of the conductive material and comprising a non-eutectic solder material;
Wiring member having   The non-eutectic solder material is made of tin (Sn), copper (Cu), silver (Ag), bismuth (Bi), lead (Pb), aluminum (Al), titanium (Ti), and silicon (Si). The melting point is 450 ° C. or less, the contents of zinc (Zn) and indium (In) are each 1% by mass or less, and the solidus temperature and the liquidus temperature. The wiring member according to claim 1, wherein the difference is 2 ° C. or more.   The wiring member according to claim 1, wherein the conductive material includes at least one selected from the group consisting of copper (Cu), silver (Ag), gold (Au), and aluminum (Al).   The wiring member according to any one of claims 1 to 3, wherein the conductive material is made of high-purity copper (Cu) having a purity of 99.99% or more.   The wiring member according to claim 1, wherein the conductive material has an average thickness of 0.001 mm or more.   It is a wiring member for solar cells, The wiring member of any one of Claims 1-5. Forming a conductive material into a long shape by rolling, injection, extrusion or slitting; and
Forming a solder coating layer by applying a non-eutectic solder material to at least a part of the surface of the elongated conductive material;
The manufacturing method of the wiring member of any one of Claims 1-6 which has these.   A step of adhering the wiring member according to any one of claims 1 to 6 to an adherend in a temperature range not lower than a solidus temperature of the non-eutectic solder material and not higher than a liquidus temperature. A method for manufacturing a bonded wiring member assembly.   The wiring member bonded body according to claim 8, wherein the temperature range is a temperature range in which a proportion of the liquid phase in the total amount of the non-eutectic solder material included in the solder coating layer is 30% by mass or more and less than 100% by mass. Manufacturing method.   The manufacturing method of the wiring member adhesion body according to claim 8 or 9 which does not have an ultrasonic adhesion process.   The wiring according to any one of claims 8 to 10, wherein the adherend is at least one selected from the group consisting of an oxide, a metal covered with an oxide layer, glass, and oxide ceramics. Manufacturing method of member adhesion object.   The wiring member adhesion body obtained by the manufacturing method according to any one of claims 8 to 11.