JP2015056595A - Flip-chip bonder and bonding method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide flip-chip bonder and bonding method of high productivity, in which a coating device is not required to be changed for each size of a die to be used.SOLUTION: In a flip-chip bonder and bonding method for picking up a die having a bump from a wafer, inverting the die thus picked up, and then bonding the bump coated with a flux material to the solder part of a work, the die is picked up from a wafer where the bump is coated with a flux material, or from a wafer coated with the flux material.

Description

  The present invention relates to a flip chip and a bonding method, and more particularly to a flip chip bonder and a bonding method with high productivity.

A part of the process of assembling a package by mounting a semiconductor die having bumps (hereinafter simply referred to as a die) on a work such as a wiring board, and a process of dividing the die from a semiconductor wafer (hereinafter simply referred to as a wafer) There is a bonding process in which a die is picked up from a wafer, the die is inverted, and is stacked on a die such as a die mounted on a substrate or already bonded.
As a conventional technique for performing a bonding process (Patent Document 1), as shown in FIG. 10, a die picked up from a wafer is inverted, the inverted die is transferred to a bonding head 41, and a bump is exposed on the lower surface. In Patent Document 1, bumps exposed for each die are immersed in a coating device 8, flux is applied to the bumps, and bonded to the solder portion of the substrate P.

JP 2010-504633 A

  However, the above-described conventional technique immerses the dies one by one in the coating apparatus, and accordingly, it takes much time, resulting in poor throughput and poor productivity. Further, it is necessary to switch the coating apparatus depending on the die size to be used.

  Therefore, in view of the above situation, an object of the present invention is to provide a flip chip bonder and a bonding method that are highly productive or do not require changing the coating device for each die size to be used.

In order to achieve the above object, the present invention has at least the following features.
The present invention provides a flip for picking up a die having bumps from a wafer with a pickup head, inverting the picked-up die, receiving the die with a bonding head, and bonding the bumps coated with a flux material to a solder part of a workpiece. In the chip bonder, the flux material includes at least a flux, and has a wafer flux application portion that applies the flux material to the surface of the wafer having the bumps.

  The present invention also provides a bonding method for picking up a die having bumps from a wafer, inverting the picked-up die, and bonding the bumps coated with a flux material to a solder part of a workpiece, wherein the flux material is applied to the bumps. The die is picked up from the wafer to which is applied.

Further, the wafer flux application unit is provided with a storage application unit that stores the flux material and has an application port on a side facing the surface of the wafer, and further supplies compressed air into the storage application unit. You may have an air supply part which applies a pressure to material.
The storage application unit has a shape whose longitudinal length is at least longer than the radius of the wafer, and the wafer flux application unit rotates the storage application unit around the center of the wafer as a rotation axis. You may have a drive part.

Furthermore, the storage application unit may be provided with a plurality of application ports along the longitudinal direction, and the flux material may be discharged from the discharge port by the compressed air and applied to the wafer.
The wafer flux application unit includes an elevating drive unit that raises and lowers the storage application unit with respect to the surface of the wafer, and the storage application unit is provided on the side of the wafer surface provided along the longitudinal direction. The coating port having an elongated structure protruding to the wafer, the coating port being brought into contact with or close to the surface of the wafer by the elevating drive shaft, and the flux material coming out of the coating port by the compressed air is applied to the wafer. May be applied.

  Further, the storage application unit includes at least an application surface having a diameter larger than the surface of the wafer, and includes a plurality of application ports on the entire application surface, and the flux material is supplied from the plurality of application ports by the compressed air. May be discharged and applied to the wafer.

Further, the wafer flux application unit rotates the application unit having a brush whose length in the longitudinal direction of the surface of the wafer is at least longer than the length of the radius of the wafer, and the application unit about the center of the wafer as a rotation axis. A rotation drive unit; a storage unit that stores the flux material; a moving unit that moves the application unit between a position where the flux material is applied and the storage unit; and a rotation unit that rotates the application unit around the center of the wafer. A rotation drive unit that rotates as a shaft,
You may have.

Furthermore, a flux material may be applied to the surface of the wafer having the bumps.
Further, the application may be performed by discharging the flux material onto the surface having the bumps or applying the flux material.

  Therefore, according to the present invention, it is possible to provide a flip chip bonder and a bonding method that are highly productive or do not require changing the coating apparatus for each die size to be used.

It is a schematic top view of the flip chip bonder which is one Embodiment of this invention. It is a figure explaining operation | movement of a pick-up head and a bonding head when it sees from the arrow A direction in FIG. It is a figure which shows the 1st Example of a wafer flux application part when it sees from the arrow B direction in FIG. FIG. 3 is a diagram illustrating a configuration of a storage application unit according to the first embodiment. It is CC sectional drawing of the die | dye supply part in FIG. It is the figure which looked at the upper and lower vicinity of the expanding ring 12 from the arrow D direction in FIG. It is a figure which shows the 2nd Example of a wafer flux application part. It is a figure which shows the 3rd Example of a wafer flux application part. It is a figure which shows the 4th Example of a wafer flux application part. It is a figure explaining the structure of the flip chip bonder of a prior art, and operation | movement of a pick-up head and a bonding head.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic top view of a flip chip bonder 10 according to an embodiment of the present invention. FIG. 2 is a diagram for explaining the operation of the pickup head 21 and the bonding head 41 when viewed from the direction of arrow A in FIG.
The die bonder 10 is roughly divided into a die supply unit 1, a pickup unit 2, a reversing mechanism unit 3, a bonding unit 4, a transfer unit 5, a substrate supply unit 6K, a substrate carry-out unit 6H, and a wafer ring supply unit 8. And a wafer flux application unit 9 and a control unit 7 for monitoring and controlling the operation of each unit.

  First, the wafer ring supply unit 8 fixes a wafer cassette 81 containing W wafer rings WR having dies in multiple stages, a ring hand 82 for gripping the wafer ring WR, and the ring hand 82, and the upper side of the rail 84 is not shown. It has a hand moving unit 83 that is moved by the driving means, and a wafer ring storage unit 85 that stores used wafer rings. As will be described later, the wafer ring supply unit 8 takes out the wafer ring WR and sets it in the die supply unit 1.

  The die supply unit 1 supplies a die D to be mounted on the workpiece W. The die supply unit 1 includes an expanding ring 12 that holds the wafer 11 and a push-up unit 13 indicated by a dotted line that pushes the die D up from the wafer 11. The die supply unit 1 is moved in the XY directions by a driving unit (not shown), and moves the die D to be picked up to the position of the push-up unit 13.

  The pickup unit 2 includes a collet unit 22 that attracts the die D from the die supply unit 1, a pickup head 21 that has the collet unit 22 at the tip and picks up the die, and a Y drive unit 23 that moves the pickup head 21 in the Y direction. Have. The pickup head 21 has driving units (not shown) that move the collet unit 22 up and down, rotate, and move in the X direction.

  With such a configuration, the pickup head 21 picks up the die D, moves to the reversing mechanism unit 3, and is attracted to the reversing mechanism unit 3.

As shown by a broken line in FIG. 2, the reversing mechanism unit 3 rotates the pickup head 21 by 180 degrees, reverses the pump of the die D, faces the lower surface, and puts the die D into the bonding head 41.
As another method of the reversing mechanism unit, a reversing mechanism unit is provided on the pickup head 21 and moved together with the pickup head, or a stage unit capable of rotating the front and back of the die is provided, and the picked up die D is once mounted on the stage unit. There is a way to put it.

  The bonding unit 4 receives the inverted die D from the pickup head 21 and bonds it to the conveyed workpiece or the already bonded die. The bonding unit 4 includes a bonding head 41 including a collet unit 42 that sucks and holds the die D at the tip, the Y driving unit 43 that moves the bonding head 41 in the Y direction, and a workpiece W position recognition mark. A substrate recognition camera 44 that picks up an image (not shown) and recognizes the bonding position.

  With such a configuration, the bonding head 41 receives the inverted die D from the pickup head, and bonds the die D to the workpiece W based on the imaging data of the substrate recognition camera 44.

  The transport unit 5 includes a substrate transport pallet 51 on which one or a plurality of workpieces (four in FIG. 1) are placed, and a pallet rail 52 on which the substrate transport pallet 51 moves, and is provided in parallel. It has the 1st, 2nd conveyance part of the same structure. The substrate transfer pallet 51 is moved by driving a nut (not shown) provided on the substrate transfer pallet 51 with a ball screw (not shown) provided along the pallet rail 52.

  With this configuration, the substrate transport pallet 51 places the workpiece W on the substrate supply unit 6K, moves to the bonding position along the pallet rail 52, and moves to the post-bonding substrate unloading unit 6H. Give work W to 6H. The first and second transport units are driven independently from each other, and the other substrate transport pallet 51 unloads the workpiece W while bonding the die D to the workpiece W placed on one substrate transport pallet 51. Returning to the substrate supply unit 6K, preparations such as placing a new workpiece W are made.

  The wafer flux application unit 9, which is a feature of this embodiment, is an apparatus that applies a flux to the wafer 11 before picking up the die D. As a result, since the flux is applied to the bumps Db (see the drawing in FIG. 2) of the die D picked up by the pickup head 21, the die D can be inverted as it is and the die can be bonded to the workpiece W having solder. .

  Therefore, in the embodiment, since it is not necessary to immerse the dies D in the coating apparatus 8 (see FIG. 10) one by one with the bonding head 41 as in the prior art, the throughput can be improved and the flip chip with high productivity can be obtained. Bonders and bonding methods can be provided. Moreover, in this embodiment, the flip chip bonder and bonding method which do not need to prepare the coating device 8 according to die size can be provided.

  Hereinafter, examples of the wafer flux application unit 9 will be described.

(Example 1)
FIG. 3 is a diagram showing a first embodiment of the wafer flux application unit 9 when viewed from the direction of arrow B in FIG. The wafer flux application unit 9 according to the first embodiment is provided on an upper portion of a wafer cassette 81 that constitutes the wafer ring supply unit 8. The wafer cassette 81 incorporates wafer rings WR in multiple stages, and an upper part is opened to apply a flux. The wafer ring WR in the wafer cassette 81 is applied with flux by the wafer flux application unit 9 in order from the top, pulled out to the ring hand 82, processed by the supply unit 1, and then returned to the wafer ring storage unit 85.

  In FIG. 3, the wafer ring storage unit 85 having the same structure as the wafer cassette 81 is omitted because it overlaps with the wafer cassette 81. The elevation in the H direction in the wafer cassette 81 is performed by the elevation drive unit 81d. Replacement movement of the wafer cassette 81 and the wafer ring storage unit 85 for pulling out and returning the wafer ring WR is performed by the horizontal drive unit 81e.

Next, the wafer flux application part 9 in Example 1 is demonstrated using FIG. 3, FIG. FIG. 4 is a diagram illustrating a configuration of the storage application unit 91 according to the first embodiment. FIG. 4A is a view of the storage application unit 91 as seen from the discharge port 91k of the flux Fp. FIG. 4B is a cross-sectional view taken along line HH in FIG.
The wafer flux application unit 9 has a length of the radius of the wafer 11 in the longitudinal direction, and has a storage application unit 91 that stores and applies the flux Fp. The storage application unit 91 includes a floating plate 91b for equalizing the pressure applied to the flux Fp and applying it stably, and discharge ports 91k as a plurality of application ports along the longitudinal direction. The discharge ports 91k are provided so as to face the surface of the wafer having the bumps Db. The storage application unit 91 is fixed to one end of a rotation shaft portion 92 that makes a round on the wafer with the center of the wafer 11 as a rotation shaft.

  The other end of the rotating shaft portion 92 is connected to an air supply cable 95 that is connected to an air supply portion (not shown) that supplies compressed air. As shown in FIG. 4B, the inside of the rotating shaft portion 92 has an air supply hole 92 c that supplies compressed air to the storage application portion 91. The drive unit 93 includes an elevating drive unit 93 e that moves the storage application unit 91 in a desired direction to apply from the wafer 11. In addition, in order to apply the flux Fp to the entire surface of the wafer 11, a rotation drive unit 93 s that rotates the storage application unit 91 by at least 360 degrees is provided. In the following description, it is assumed that the wafer is applied to the entire surface of the wafer. However, when the flux Fp is applied to a part of the wafer 11 such as when the flux only needs to be applied to a part of the wafer 11, a part of the wafer 11 can be rotated. A simple rotation drive unit may be used. The fixing unit 94 fixes each component of the wafer flux application unit 9 to the mechanism unit of the die bonder 10.

  With this configuration, before supplying the wafer ring WR to the die supply unit 1, the flux Fp is applied to the wafer 11 of the wafer ring WR that comes to the uppermost stage of the wafer cassette 81. The flux is applied as follows.

First, the height of the storage application unit 91 is adjusted by the elevating shaft of the drive unit 93. Next, the compressed air is supplied to the storage and application unit 91 via the air supply cable and the air supply hole 92c of the rotating shaft.
At this time, the compressed air simply presses the floating plate 91b on which the flux Fp is placed against the discharge port 91k, and the pressed flux Fp is discharged from the discharge port 91k. In this state, by rotating the storage application unit 91 once, the flux Fp is applied to the entire surface of the wafer 11, that is, applied to the bumps of all the dies D on the wafer.

  Next, the movement of the die supply unit 1 of the wafer ring WR, the wafer cassette 81, and the wafer ring storage unit 85 will be described with reference to FIGS. FIG. 5 is a cross-sectional view taken along the line CC of the die supply unit 1 in FIG. FIG. 6 is a view of the vicinity of the top and bottom of the expand ring 12 in FIG.

  As shown in FIG. 3, the wafer ring WR is gripped by the ring hand 82 and taken out from the wafer cassette 81. The ring hand 82 moves along the rail 84 in the direction of arrow F and is set on the expanding ring 12. At this time, the ring hand 82 passes through the opening 12k at the center of the expanding ring 12 shown in FIG. 6, passes through the expanding ring 12, releases the wafer ring WR immediately before passing through, and reaches the position indicated by the broken line in FIG. come. As a result, the wafer ring WR is installed on the expanding ring 12 as shown in FIG.

Thereafter, as shown in FIG. 5, the expanding ring 12 lowers the wafer ring WR in the direction of arrow E so that the die D can be easily picked up. The reason why the pick-up is easy is that the support ring 17 causes the adhered dicing tape 16 of the wafer 11 to be stretched, the interval between the dies D is widened, and the push-up unit 13 can easily push up the die D. is there.
The push-up unit 13 is moved in the vertical direction by a drive mechanism (not shown), and the die supply unit 1 is moved in the X and Y horizontal directions.

  After that, according to the operation shown in FIG. 2, the pick-up head 21 picks up the die D in which the flux has already been applied to the bumps and reverses it. The bonding head 41 receives the inverted die D from the pickup head 21 and performs bonding so that bumps come to the solder portion of the workpiece W.

  In the next step, unnecessary flux Fp may be washed or undercoat may be applied to protect the die D.

  After a predetermined number of dies D of the wafer 11 have been picked up, the expand ring 12 is raised, and the ring hand 82 in the broken line state shown in FIG. The ring hand 82 holds the wafer ring WR and sets it in the wafer ring storage unit 85 that is replaced with the wafer cassette 81. Thereafter, the wafer cassette 81 is replaced with the wafer ring storage unit 85 again, and the wafer ring WR that newly comes to the uppermost stage in the wafer cassette 81 is gripped, and the above-described processing is repeated. Note that the top of the wafer ring WR is moved up and down in the direction of the arrow H by the lift drive unit 81d provided on the fixed base 81b of the wafer cassette 81.

  As described above, by applying the flux Fp to the wafer in advance, it is possible to shorten the application time by the bonding head, improve the tact time, and provide a flip chip bonder and a bonding method with high productivity.

(Example 2)
FIG. 7 is a diagram showing a second embodiment of the wafer flux application unit 9. FIG. 7A is a view of the storage application unit 91 as seen from the flux application port 91t. FIG.7 (b) is II sectional drawing in Fig.7 (a).

A difference of the second embodiment from the first embodiment is a storage application unit 91. Other points are the same as those in the first embodiment. First, the storage application portion 91 is not a simple flux Fp, but a flexible material having affinity with the flux Fp, for example, a very soft gel material mainly made of silicone. The coating material Fc is mixed. Second, since the fluidity of the coating material Fc can be suppressed to a certain degree, the coating material Fc is directly applied to the coating material Fc by applying pressure to the coating material Fc with compressed air, or close to be coated. Apply by. For this purpose, the storage application unit 91 has an application port 91t having a structure elongated in the protruding longitudinal direction. In FIG. 7, the number of application ports 91t is one, but it may be divided into a plurality.
In the second embodiment, the same effect as that of the first embodiment can be obtained.

In the following description, the coating material Fc mixed with a material having affinity with the flux Fp shown in Example 2 is expressed as the flux material F even in the case of the flux Fp containing only the flux shown in Example 1.
(Example 3)
FIG. 8 is a diagram showing a third embodiment of the wafer flux application unit 9. The third embodiment differs from the first and second embodiments in many respects. First, the wafer flux application unit 9 is provided not on the wafer cassette 81 but on the conveyance path of the die supply unit 1 from the wafer cassette 81. Second, the wafer flux application unit 9 according to the third embodiment is provided in the conveyance path, and includes a storage unit 96 that stores the flux material F, and a brush 91b that has a length in the longitudinal direction of at least the radius of the wafer 11. And have. In addition, the wafer flux application unit 9 includes a rotary shaft part 92b having no air supply hole 92c, a lift drive part 93e for moving up and down between the brush 91b storage part 96 and the position where the flux material F is applied, and the same as in the first embodiment. And a drive unit 93 including a rotation drive unit 93s that rotates the brush 91b. The wafer ring supply unit 8 has the same basic structure as that of FIG. 3 although the distance between the die supply unit 1 and the wafer cassette 81 is different.

With such a configuration, in Example 3, the flux material F is applied to the wafer 11 as follows.
First, before the wafer ring WR is conveyed, the brush 91b is lowered, and the flux material F in the storage unit 96 is attached to the brush 91b. Thereafter, the brush 91b is raised and waits for the wafer ring WR to be conveyed. After being conveyed, the brush 91b is lowered to the surface of the wafer 11, and the brush 91b is rotated once or several times to apply the flux material F to the wafer 11 so as to be even.

  In FIG. 8, the wafer flux application part 9 is provided at the upper part of the conveyance path, and the storage part 96 for accommodating the flux material F is provided at the lower part of the conveyance path, and the flux material F is attached to the brush 91b by the above function. In addition to the vertical drive by the wafer flux application unit 9, by providing the wafer flux application unit 9 and the storage unit 96 around the conveyance path, for example, means for moving the flux material F to the left or right except when the flux is attached. Thus, the flux material F may be attached to the wafer.

  According to the third embodiment, there are advantages that the same effects as the first embodiment are obtained and the wafer ring storage unit 85 is unnecessary.

Example 4
FIG. 9 is a diagram showing a fourth embodiment of the wafer flux application unit 9. In the wafer flux application unit 9 of Example 3, the storage application unit of Example 1 shown in FIG. 4B is formed in a columnar shape having a diameter longer than the diameter of the wafer 11, and the discharge ports 91k that are a plurality of application ports are formed on the entire surface. The storage and application unit 91 distributed in a distributed manner, a multi-stage arm 97 that conveys the storage and application unit 91 onto the wafer 11, and an air supply cable 95 that supplies compressed air to the storage and application unit 91. The multi-stage arm 97 is carried in from the direction of arrow G shown in FIG. 1 in order to avoid interference with the ring hand 82 of the wafer ring supply unit 8. Further, the multistage arm 97 has an air supply hole (not shown) communicating with the storage application section 91 therein.

  With such a configuration, in the fourth embodiment, when the wafer 11 is carried by the ring hand 82 and placed on the expanding ring 12, the storage application unit 91 is carried onto the wafer 11 by the multistage arm 97. Thereafter, compressed air is supplied through the air supply cable 95, and the flux material F is sprayed and applied over the entire surface of the wafer 11 from a plurality of discharge ports 91k distributed in a planar shape.

  In the fourth embodiment, similarly to the first to third embodiments, by applying the F-flux material to the wafer in advance, it is possible to shorten the application time by the bonding head, improve the tact time, and achieve a high productivity flip chip bonder. And a bonding method can be provided.

  The configuration of the wafer flux application unit of each embodiment described above can be applied to the configuration of other wafer flux application units.

  In each of the embodiments described above, the flux material is applied to the wafer in the flip chip bonder. However, it may be applied by another apparatus, and the wafer in the flip chip bonder may be carried in and bonded.

  Although the embodiments of the present invention have been described above, various alternatives, modifications, and variations can be made by those skilled in the art based on the above description, and the present invention is not limited to the various embodiments described above without departing from the spirit of the present invention. It encompasses alternatives, modifications or variations.

1: Die supply unit 2: Pickup unit 21: Pickup head 22: Collet unit 22D: Collet 22H: Collet holder 3: Reversing mechanism unit 4: Bonding unit 41: Bonding head 42: Collet unit 7: Control unit 8: Wafer ring supply Unit 81: Wafer cassette 82: Ring hand 83: Hand moving unit 84: Rail 85: Wafer ring storage unit 9: Wafer flux application unit 91: Storage application unit 91b: Floating plate 91k: Discharge port 91t: Application port 92: Rotating shaft Part 92c: Air supply hole 93: Drive part 93e: Lifting drive part 93s: Rotation drive part 94: Fixed part 95: Air supply cable 96: Storage part 97: Multistage arm 10: Flip chip bonder 11: Wafer 13: Push-up unit 5 : Transport unit 6K: Substrate supply unit 6H: Substrate unloading unit 51: Base Board transfer pallet D: Die Db: Bump F: Flux material Fc: Coating material Fp: Flux only W: Substrate WR: Wafer ring

Claims (14)

A flip chip bonder that picks up a die having bumps from a wafer with a pick-up head, reverses the picked-up die, receives the die with a bonding head, and bonds the bumps coated with a flux material to a solder part of a workpiece. And
The flux material includes at least a flux,
Having a wafer flux application part for applying the flux material on the surface of the wafer having the bumps;
Flip chip bonder characterized by that. The flip chip bonder according to claim 1,
The wafer flux application unit stores the flux material, and includes a storage application unit having an application port on the side facing the surface of the wafer,
Furthermore, it has an air supply part that supplies compressed air into the storage application part and applies pressure to the flux material,
Flip chip bonder characterized by that. The flip chip bonder according to claim 2,
The storage application portion has a shape in which the length in the longitudinal direction is at least longer than the length of the radius of the wafer,
The wafer flux application unit has a rotation drive unit that rotates the storage application unit about the center of the wafer as a rotation axis.
Flip chip bonder characterized by that. The flip chip bonder according to claim 3,
The storage application unit is provided with a plurality of the application ports along the longitudinal direction,
The flux material is discharged from the discharge port by the compressed air and applied to the wafer.
Flip chip bonder characterized by that. The flip chip bonder according to claim 3,
The wafer flux application unit includes an elevation drive unit that raises and lowers the storage application unit with respect to the surface of the wafer,
The storage application portion includes the application port having an elongated structure protruding toward the wafer surface provided along the longitudinal direction,
The coating port is brought into contact with or close to the surface of the wafer by the elevating drive shaft, and the flux material is discharged from the coating port by the compressed air and applied to the wafer.
Flip chip bonder characterized by that. The flip chip bonder according to claim 2,
The storage application unit includes at least an application surface having a diameter larger than the surface of the wafer, and includes a plurality of the application ports on the entire application surface,
The compressed air is applied to the wafer by discharging the flux material from the plurality of application ports.
Flip chip bonder characterized by that. The flip chip bonder according to claim 1,
The wafer flux coating unit includes a coating unit having a brush whose length in the longitudinal direction of the wafer surface is at least longer than the radius of the wafer, and a rotational drive that rotates the coating unit about the center of the wafer as a rotation axis. A storage unit that stores the flux material, a moving unit that moves the coating unit between the position where the flux material is applied and the storage unit, and the coating unit is configured with the center of the wafer as a rotation axis. A rotation drive unit that rotates,
Flip chip bonder characterized by that. The flip chip bonder according to any one of claims 4 to 7,
The wafer flux application unit has means for moving the storage application unit to an upper part of a die supply unit that holds the wafer having the die that picks up the die,
Flip chip bonder characterized by that. The flip chip bonder according to any one of claims 4 to 7, wherein a die supply unit that holds the wafer having the die that picks up the die, and a wafer cassette that includes a plurality of wafer rings that hold the unprocessed wafer; A wafer ring supply unit including a transfer unit that takes out the wafer ring from the wafer cassette and transfers the wafer ring to the die supply unit.
The wafer flux application unit takes out the wafer ring from the wafer cassette and applies the flux to the wafer while being set in the die supply unit.
Flip chip bonder characterized by that. The flip chip bonder according to claim 9, wherein
The wafer ring supply unit includes a wafer ring storage unit that stores the wafer ring that holds a processed wafer,
The wafer flux application part is provided on the upper part of the wafer cassette,
Flip chip bonder characterized by that. The flip chip bonder according to claim 9, wherein
The wafer flux application unit is provided in a conveyance path that is taken out from the wafer cassette and set in the die supply unit.
Flip chip bonder characterized by that. There is a bonding method of picking up a die having bumps from a wafer, reversing the picked-up die, and bonding the bumps coated with a flux material to a solder part of a workpiece,
Picking up the die from the wafer with the flux material applied to the bumps,
A bonding method characterized by the above. The bonding method according to claim 12, wherein
The said flux material is apply | coated to the surface which has the said bump of the said wafer. The bonding method characterized by the above-mentioned. The bonding method according to claim 13,
The application is performed by discharging the flux material onto the surface having the bumps or by applying the flux material.
A bonding method characterized by the above.

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