JP2015055524A - Temperature sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature sensor having improved sensitivity.SOLUTION: A temperature sensor 100 comprises: an infrared ray absorption membrane 20 for absorbing an infrared ray emitted from a heat source and for evolution of heat; a temperature transducer 10 for detecting a heat amount of the infrared ray absorption membrane 20 and for outputting an electric signal corresponding to temperature of the heat source; and lead patterns 31, 32 for transmitting the heat amount distributed on the infrared ray absorption membrane 20 to the temperature transducer 10 and for outputting the electric signal to outside. The lead patterns 31, 32 have a part whose thickness is different from other parts respectively, and the parts whose thickness is thicker than that of other parts of the lead patterns 31, 32 are disposed in positions where are closer to the temperature transducer 10 than parts whose thickness is thinner.

Description

  The present invention relates to a temperature sensor that measures the temperature of a heat source in a non-contact manner.

  Conventionally, a temperature sensor that measures the temperature of a heat source in a non-contact manner by detecting the amount of heat of infrared rays radiated from the heat source is known. This type of temperature sensor detects a temperature rise caused by infrared light reception by a temperature sensitive element. The temperature sensing element has a temperature characteristic that changes in electrical characteristics according to the temperature, and estimates the temperature of the heat source based on an electrical signal output from the temperature sensing element to the outside through a lead pattern. Can do.

  For example, in Patent Document 1, an electrically insulating heat-resistant substrate, two lead portions formed of a conductive foil on the heat-resistant substrate, a small hole provided in the heat-resistant substrate between the two lead portions, A non-contact temperature detector is disclosed that includes a thermal element located in a hole and connected between two lead portions. In the non-contact type temperature detector described in Patent Document 1, a fold-shaped refracting portion is provided on a lead portion on at least one side to which a thermal element is connected so as to be parallel to the temperature measurement object. By making the lead part reaching the part as thin as possible, the thermal resistance of the lead part is increased, and the heat dissipation from the thermal element is reduced.

Utility Model Registration No. 2506241

  By the way, in the temperature sensor that measures the temperature of the heat source in a non-contact manner, a heat collection range that is an effective irradiation area of infrared rays radiated from the heat source is defined. This heat collection range varies depending on the size and shape of the heat source and the surrounding environment.

  However, as shown in Patent Document 1, in the technique of increasing the thermal resistance by increasing the length by making the lead part thin and forming a zigzag refracting part, the lead part is within the heat collecting range. There is a limit to increasing the length, and there is a risk that the sensitivity will be insufficient.

  The present invention has been made in view of the above problems, and an object thereof is to provide a temperature sensor with improved sensitivity.

  In order to solve the above problems, a temperature sensor according to the present invention includes an infrared absorption film that generates heat by absorbing infrared rays radiated from a heat source, and an electric power corresponding to the temperature of the heat source by detecting the amount of heat of the infrared absorption film. A lead pattern for outputting a signal and a lead pattern for transferring the amount of heat distributed in the infrared absorption film to the heat sensitive element and outputting an electrical signal to the outside, the lead pattern having portions with different thicknesses, The thick part of the lead pattern is arranged at a position closer to the temperature sensitive element than the thin part of the lead pattern.

  According to the present invention, the lead pattern has a portion having a different thickness, and the thick portion of the lead pattern is disposed closer to the temperature sensitive element than the thin portion of the lead pattern. Here, the thick portion of the lead pattern is a portion having a small thermal resistance, and the thin portion of the lead pattern is a portion having a large thermal resistance. Therefore, the heat absorbed by the infrared absorption film is transmitted to the direction where the thermal resistance is small, that is, the portion where the lead pattern is thick. Therefore, the heat absorbed by the infrared absorption film is quickly transferred to the temperature sensing element through the lead pattern and the outflow of heat to the outside is suppressed, so that the sensitivity of the temperature sensor can be improved. .

  Preferably, the lead pattern includes a plurality of portions with different thicknesses, and the plurality of portions with different thicknesses of the lead pattern are arranged so that the thickness increases from the outside toward the temperature sensitive element. Usually, the heat absorbed by the infrared absorption film is captured at various points of the lead pattern, and the heat flow is added as the temperature sensitive element is approached. For this reason, when multiple parts with different lead pattern thicknesses are arranged so that the thickness increases from the outside toward the temperature sensitive element, the heat that is captured at various points in the lead pattern is efficiently transferred to the temperature sensitive element. A path will be formed. As a result, the sensitivity of the temperature sensor can be further increased.

  Preferably, a heat collecting film is provided on the infrared absorption film and spreads around the lead pattern, and the thickness of the heat collecting film is preferably smaller than the thickness of the lead pattern. In this case, the amount of heat stored in the infrared absorption film that could not be captured by the lead pattern can be reliably captured, and the thickness of the heat collection film is smaller than the thickness of the lead pattern and the thermal resistance is greater. Heat flow to the lead pattern can be promoted. As a result, the responsiveness of the temperature sensor can be improved and the sensitivity can be further increased.

  Preferably, the heat-sensitive element is formed in at least one of a radial shape and a network-like shape on the surface of the infrared absorption film starting from the temperature-sensitive element, and further has a heat collection pattern for collecting the amount of heat distributed in the infrared absorption film to the temperature-sensitive element. The heat collection pattern may include portions having different thicknesses, and the thick portion of the heat collection pattern may be disposed closer to the temperature sensitive element than the thin portion of the heat collection pattern. In this case, since the heat collection pattern is provided, the amount of heat stored in various places of the infrared absorption film can be captured uniformly, and the heat transmitted to the heat collection pattern is quickly transferred to the temperature sensing element. Since it heats, the responsiveness of the temperature sensor can be improved and the sensitivity can be further increased. In addition, since the heat collection pattern has portions with different thicknesses, and the thick portion of the heat collection pattern is disposed closer to the temperature sensitive element than the thin portion of the heat collection pattern, the infrared absorption film Thus, a heat transfer path is formed in which the amount of heat stored in each of these points is efficiently transferred to the temperature sensitive element. As a result, the responsiveness of the temperature sensor can be improved and the sensitivity can be further increased.

  More preferably, a heat collecting film is provided on the infrared absorption film and spreads around the heat collecting pattern, and the thickness of the heat collecting film is preferably smaller than the thickness of the heat collecting pattern. As a result, the amount of heat stored in the infrared absorption film that could not be captured by the heat collection pattern can be reliably captured, and the thickness of the heat collection film is smaller than the thickness of the heat collection pattern and the thermal resistance is large. Heat flow from the film to the heat collection pattern can be promoted. As a result, the responsiveness of the temperature sensor can be improved and the sensitivity can be further increased.

  Preferably, the cross-sectional shape along the direction orthogonal to the extending direction of the lead pattern is a substantially semicircle. As a result, the contact area of the lead pattern with air is reduced, and heat dissipation from the lead pattern can be reduced. Therefore, heat loss is reduced and the sensitivity of the temperature sensor can be further increased.

  Preferably, the cross-sectional shape along a direction orthogonal to the extending direction of at least one of the lead pattern and the heat collection pattern is a substantially semicircle. Thereby, the contact area with the air of the lead pattern or the heat collection pattern is reduced, and heat radiation from the lead pattern or the heat collection pattern can be reduced. Therefore, heat loss is reduced and the sensitivity of the temperature sensor can be further increased.

  According to the present invention, a temperature sensor with improved sensitivity can be provided.

It is a top view of the temperature sensor which concerns on Embodiment 1 of this invention. FIG. 2 is a schematic end view of a cut portion taken along line AA in FIG. 1. It is a model cutting part end view in alignment with the BB line in FIG. It is a figure corresponding to the model cut part end elevation in alignment with the BB line in Drawing 1 in case the section shape of a lead pattern is a rectangle. It is a top view of the temperature sensor which concerns on Embodiment 2 of this invention. FIG. 6 is a schematic end view of the cut section along the line CC in FIG. 5. It is a top view of the temperature sensor which concerns on Embodiment 3 of this invention. It is a model cutting part end elevation in alignment with the DD line in FIG. It is a top view of the modification of the temperature sensor which concerns on Embodiment 3 of this invention. It is a top view of the temperature sensor which concerns on Embodiment 4 of this invention. It is a model cutting part end elevation in alignment with the EE line in FIG. It is a top view of the modification of the temperature sensor which concerns on Embodiment 4 of this invention. It is a top view of the temperature sensor which concerns on Embodiment 5 of this invention. FIG. 14 is a schematic end view of the cut portion taken along line FF in FIG. 13. It is a top view of the modification of the temperature sensor which concerns on Embodiment 5 of this invention. It is a top view of the temperature sensor which concerns on Embodiment 6 of this invention. It is a model cut part end elevation in alignment with the GG line in FIG. It is a graph which shows the temperature rise with progress of time of Example 1 and a prior art example. It is a graph which shows the temperature rise with progress of time of Example 1, 2 and a prior art example. It is a graph which shows the temperature rise with progress of time of Example 1, 3 and a prior art example. It is a graph which shows the temperature rise with progress of time of Example 1, 4 and a prior art example. It is a top view of the temperature sensor which concerns on a prior art example. FIG. 23 is a schematic end view of the cut portion along the line HH in FIG. 22.

  DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

(Embodiment 1)
First, the configuration of the temperature sensor 100 according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of a temperature sensor according to Embodiment 1 of the present invention. FIG. 2 is a schematic end view of the cut section along the line AA in FIG.

  As shown in FIG. 1, the temperature sensor 100 includes an infrared absorption film 20, a temperature sensitive element 10, and a lead pattern 30.

  The infrared absorption film 20 absorbs infrared rays radiated from a heat source (not shown) and rises in temperature. The material of the infrared absorption film 20 may be any material that absorbs radiant infrared rays from a heat source and rises in temperature. For example, a material having an absorption spectrum for light in a wavelength band of 4 μm to 10 μm called far infrared rays is preferable. Such a material is preferably a fluororesin, a silicone resin, or a resin made of a polymer material such as polyester, polyimide, polyethylene, polycarbonate, PPS (polyphenylene sulfide). The thickness of the infrared absorption film 20 is usually about 15 μm to 50 μm.

  The temperature sensing element 10 outputs an electric signal corresponding to the temperature of the heat source by detecting the heat of the infrared absorption film 20. The temperature sensing element 10 is not particularly limited as long as it is a sensor element whose electrical characteristics change according to temperature. For example, a thermistor, a thermopile, a metal side temperature body, or the like having resistance temperature characteristics may be used. Is preferred. When the temperature sensing element 10 is a thermistor having resistance temperature characteristics, for example, the temperature change of the temperature sensing element 10 appears as a resistance value change. By causing a predetermined current to flow through the temperature sensing element 10 in advance, a change in resistance value of the temperature sensing element 10 is detected as a voltage change. The output voltage of the temperature sensing element 10 is signal-processed as an electrical signal corresponding to the temperature of the heat source. In the present embodiment, the temperature sensing element 10 includes a pair of electrodes 11 and 12 and is disposed on the surface of the infrared absorption film 20 opposite to the surface on which infrared rays from the heat source are incident.

  The lead pattern 30 transfers the amount of heat distributed in the infrared absorption film 20 to the temperature sensitive element 10. The lead pattern 30 outputs an electrical signal from the temperature sensitive element 10 to the outside. That is, the change in the electrical characteristics corresponding to the temperature change of the temperature sensing element 10 is extracted from the lead pattern 30 to the outside as an electrical signal corresponding to the temperature of the heat source. The material of the lead pattern 30 is preferably a material that is more excellent in thermal conductivity than the infrared absorption film 20 and has a low electrical resistance. Such a material preferably contains a lot of gold, silver, platinum, copper, aluminum, carbon nanotubes and the like.

  The lead pattern 30 has a pair of lead patterns 31 and 32. One end of the lead pattern 31 is connected to the electrode 11 of the temperature sensing element 10, and the other end extends so as to reach the outside. One end of the lead pattern 32 is connected to the electrode 12 of the temperature sensitive element 10, and the other end extends so as to reach the outside. In the present embodiment, the pair of lead patterns 31 and 32 extend linearly in opposite directions around the temperature sensing element 10.

  As shown in FIG. 2, the lead patterns 31 and 32 have portions with different thicknesses. The thick portions of the lead patterns 31 and 32 are arranged closer to the temperature sensitive element 10 than the thin portions of the lead patterns 31 and 32. In the present embodiment, the portion from the intermediate portion to the temperature sensing element 10 in the entire lead patterns 31 and 32 is a thick portion, and the portion from the intermediate portion to the outside is a thin portion. Note that the portions of the lead patterns 31 and 32 having different thicknesses may be made of the same material or different materials. When the portions having different thicknesses of the lead patterns 31 and 32 are made of the same material, there is an advantage that they can be formed in the same process. For example, the lead patterns 31 and 32 having conductivity and thermal conductivity can be formed by using a printing technique or a plating technique. Here, when the optical path of the infrared rays irradiated from the heat source is determined by the surrounding environment or a cylindrical guide (not shown) and the heat collection range 50 is defined on the infrared absorption film 20, the lead patterns 31 and 32. It is preferable to arrange portions having different thicknesses within the heat collection range 50. As a result, the heat absorbed by the infrared absorption film 20 is transmitted to the direction of low thermal resistance, that is, the thick portions of the lead patterns 31 and 32.

  Here, the contact area of the lead patterns 31 and 32 with air will be described in detail with reference to FIGS. FIG. 3 is a schematic end view of the cutting section along the line BB in FIG. 1. FIG. 4 is a view corresponding to a schematic cut end view taken along line BB in FIG. 1 when the cross-sectional shape of the lead pattern is substantially rectangular.

As shown in FIG. 3, the lead patterns 31 and 32 have a substantially semicircular cross-sectional shape (hereinafter simply referred to as “cross-sectional shape”) along a direction orthogonal to the extending direction. By the way, the heat radiation from the lead patterns 31 and 32 has a circumferential length that touches the air that is not in contact with the infrared absorption film 20 of the lead patterns 31 and 32 when the material, the cross-sectional area, and the length in the extending direction are the same. Proportional. For example, the case where the cross-sectional shape of the lead patterns 31 and 32 is substantially semicircular as shown in FIG. 3 is compared with the case where the cross-sectional shape of the lead patterns 31 and 32 is substantially rectangular as shown in FIG. Note that the cross-sectional area when the cross-sectional shape is approximately semicircular and the cross-sectional area when the cross-sectional shape is approximately rectangular are the same S, and the ratio of length to width when the cross-sectional shape is approximately rectangular is 1: 5. When the cross-sectional shape is a substantially semicircle, the circumference is 1.57 × S ^0.5 , and when the cross-sectional shape is a substantially rectangular shape, the circumference is 3.13 × S ^0.5 . That is, the circumferential length is smaller when the cross-sectional shape is a substantially semicircle than when the cross-sectional shape is a substantially rectangular shape. Therefore, by making the cross-sectional shape of the lead patterns 31 and 32 a shape close to a semicircle, the contact area with the air is reduced. Thus, since the contact area to air becomes small, heat radiation is reduced, and heat can be efficiently transferred to the temperature sensing element 10, so that the sensitivity can be increased. The “substantially semicircle” here means not only a semicircle but also a shape close to a semicircle such as a semi-ellipse or a kamaboko shape.

  Further, when the infrared rays from the heat source start to be radiated to the infrared absorption film 20, the temperature difference between the temperature sensing element 10 and the infrared absorption film 20 is large, and the temperature is detected from the lead patterns 31 and 32 due to the temperature gradient between the two. Heat flows into the element 10. Then, as the temperature of the temperature sensitive element 10 rises, the temperature gradient becomes smaller, so that the heat flow into the temperature sensitive element 10 decreases. On the other hand, part of the heat collected in the temperature sensing element 10 is dissipated through the lead patterns 31 and 32 and the ambient atmosphere, and the temperature of the temperature sensing element 10 is lowered. The heat inflow continues. Then, when the amount of heat flowing into the temperature sensing element 10 and the amount of heat flowing out of the temperature sensing element 10 are balanced, a thermal equilibrium state is established, and the temperature of the temperature sensing element 10 becomes constant. Since a part of the heat flowing through the lead patterns 31 and 32 flows out to the outside through the surface of the pattern, the cross-sectional shape of the lead patterns 31 and 32 is made into a substantially semicircle to reduce the surface area and suppress the heat outflow to the outside. Is preferred.

  As described above, in the temperature sensor 100 according to the present embodiment, the lead patterns 31 and 32 have portions with different thicknesses, and the thick portions of the lead patterns 31 and 32 are thin portions of the lead patterns 31 and 32. It is arranged at a position closer to the temperature sensitive element 10. Here, the thick portions of the lead patterns 31 and 32 are portions having a small thermal resistance, and the thin portions of the lead patterns 31 and 32 are portions having a large thermal resistance. Therefore, the heat absorbed by the infrared absorption film 20 is transmitted to the direction where the thermal resistance is small, that is, the thick portions of the lead patterns 31 and 32. Therefore, the heat absorbed by the infrared absorption film 20 is quickly transferred to the temperature sensing element 10 through the lead patterns 31 and 32 and the outflow of heat to the outside is suppressed, so that the sensitivity of the temperature sensor 100 is increased. Can be improved.

  Further, in the temperature sensor 100 according to the present embodiment, the cross-sectional shape along the direction orthogonal to the extending direction of the lead patterns 31 and 32 is a substantially semicircle. Thereby, the contact area with the air of the lead patterns 31 and 32 becomes small, and the heat radiation from the lead patterns 31 and 32 can be reduced. Therefore, heat loss is reduced, and the sensitivity of the temperature sensor 100 can be further increased.

(Embodiment 2)
Next, the configuration of the temperature sensor 200 according to Embodiment 2 of the present invention will be described with reference to FIGS. 5 and 6. FIG. 5 is a plan view of a temperature sensor according to Embodiment 2 of the present invention. FIG. 6 is a schematic end view of the cut section along the line CC in FIG. The temperature sensor 200 according to the second embodiment is different from the temperature sensor 100 according to the first embodiment in that the lead patterns 231 and 232 include a plurality of portions having different thicknesses. Hereinafter, a description will be given focusing on differences from the first embodiment.

  As shown in FIG. 5, the temperature sensor 200 includes the infrared absorbing film 20, the temperature sensitive element 10, and a lead pattern 230.

  The lead pattern 230 transfers the amount of heat distributed in the infrared absorption film 20 to the temperature sensitive element 10. The lead pattern 230 outputs an electrical signal from the temperature sensitive element 10 to the outside. That is, the change in the electrical characteristics corresponding to the temperature change of the thermosensitive element 10 is extracted from the lead pattern 230 to the outside as an electrical signal corresponding to the temperature of the heat source. The material of the lead pattern 230 is preferably a material that is more excellent in thermal conductivity than the infrared absorption film 20 and has a low electrical resistance. Such a material preferably contains a lot of gold, silver, platinum, copper, aluminum, carbon nanotubes and the like.

  The lead pattern 230 has a pair of lead patterns 231 and 232. One end of the lead pattern 231 is connected to the electrode 11 of the temperature sensing element 10, and the other end extends to reach the outside. One end of the lead pattern 232 is connected to the electrode 12 of the temperature sensitive element 10, and the other end extends so as to reach the outside. In the present embodiment, the pair of lead patterns 231 and 232 extend linearly in opposite directions around the temperature sensitive element 10. However, in this embodiment, the lead patterns 231 and 232 include a plurality of portions having different thicknesses, and this point is different from the first embodiment.

  As shown in FIG. 6, the lead patterns 231 and 232 have a plurality of portions having different thicknesses. In the present embodiment, the plurality of portions having different thicknesses of the lead patterns 231 and 232 are arranged so that the thickness increases from the outside toward the temperature sensitive element 10. As a result, when the thickness of the lead patterns 231 and 232 is increased, the thermal resistance is reduced, so that the heat captured at each location of the lead patterns 231 and 232 easily flows to the temperature sensitive element 10. Conversely, in the present embodiment, the plurality of portions having different thicknesses of the lead patterns 231 and 232 are arranged so that the thickness decreases from the temperature sensitive element 10 toward the outside. As a result, the heat resistance increases as the lead patterns 231 and 232 become thinner, so that the outflow of heat to the outside can be suppressed. In addition, the several part from which the thickness of the lead patterns 231 and 232 differs may be comprised from the same material, and may be comprised from a different material. When a plurality of portions having different thicknesses of the lead patterns 231 and 232 are made of the same material, there is an advantage that they can be formed in the same process. For example, the lead patterns 231 and 232 having conductivity and thermal conductivity can be formed by using a printing technique or a plating technique. Further, in the present embodiment, the plurality of portions having different thicknesses of the lead patterns 231 and 232 are arranged so that the thickness gradually increases from the outside toward the temperature sensing element 10, but the thickness is continuously increased. You may arrange | position so that it may become.

  As described above, in the temperature sensor 200 according to the present embodiment, the lead patterns 231 and 232 include a plurality of portions having different thicknesses, and the plurality of portions having different thicknesses of the lead patterns 231 and 232 are connected to the temperature sensitive element 10 from the outside. It arrange | positions so that thickness may become thick toward it. Usually, the heat absorbed by the infrared absorption film 20 is captured at various portions of the lead patterns 231 and 232, and the heat flow rate is added as the temperature sensitive element 10 is approached. Therefore, if a plurality of portions having different thicknesses of the lead patterns 231 and 232 are arranged so that the thickness increases from the outside toward the temperature sensing element 10, the heat trapped in various places of the lead patterns 231 and 232 is captured by the temperature sensing element 10. Thus, a heat transfer path for efficiently transferring heat is formed. Further, the infrared absorption film 20 has a small temperature distribution because heat tends to flow out to the outside in the peripheral portion, and a large temperature distribution because heat hardly flows out in the central portion. In the present embodiment, since the thermal resistance of the lead patterns 231 and 232 is small in the central portion of the infrared absorption film 20 where the temperature distribution is large, heat can be efficiently transmitted to the thermal element 10. On the other hand, since the thermal resistance of the lead patterns 231 and 232 is large in the peripheral portion of the infrared absorption film 20 where the temperature distribution is small, the outflow of heat to the outside can be reduced. As a result, the sensitivity of the temperature sensor 200 can be further increased.

(Embodiment 3)
Subsequently, the configuration of the temperature sensor 300 according to Embodiment 3 of the present invention will be described with reference to FIGS. 7 and 8. FIG. 7 is a plan view of a temperature sensor according to Embodiment 3 of the present invention. FIG. 8 is a schematic end view of the cut section along the line DD in FIG. The temperature sensor 300 according to the third embodiment is different from the temperature sensor 200 according to the second embodiment in that a heat collection pattern 40 is provided. Hereinafter, a description will be given focusing on differences from the second embodiment.

  Similar to the second embodiment, the temperature sensor 300 includes the infrared absorption film 20, the temperature sensitive element 10, and a lead pattern 230. However, in the present embodiment, a heat collection pattern 40 is provided, which is different from the second embodiment. Hereinafter, a description will be given focusing on differences from the second embodiment.

  As shown in FIG. 7, the heat collection pattern 40 is formed radially in the plane of the infrared absorption film 20 starting from the temperature sensitive element 10. The heat collection pattern 40 is a heat collection member for collecting the amount of heat distributed in the infrared absorption film 20 to the temperature sensitive element 10. In the present embodiment, the heat collection pattern 41 formed radially in the plane of the infrared absorption film 20 starting from the electrode 11 of the temperature sensitive element 10 and the infrared absorption film 20 starting from the electrode 12 of the temperature sensitive element 10. A heat collecting pattern 42 is formed radially in the plane. More specifically, the heat collection pattern 41 has a plurality of trunks extending from the lead pattern 231 while repeating branching to a region located above the lead pattern 231 starting from the electrode 11 of the temperature sensing element 10, and below the lead pattern 231. It consists of a plurality of trunks that extend while repeating branching in the region located at. Similarly, the heat collection pattern 42 starts from the electrode 12 of the thermosensitive element 10 and is positioned below the lead pattern 232 and a plurality of trunks that extend while repeating branching in a region located above the lead pattern 232 in the drawing. It consists of a plurality of trunks that extend while repeating branching in a region. In the present embodiment, the heat collection patterns 41 and 42 are formed radially in the plane of the infrared absorption film 20 starting from the electrodes 11 and 12 of the temperature sensing element 10. 11 and 12 may be formed radially in the plane of the infrared absorption film 20 starting from the vicinity. However, in this case, a heat collection pattern for connecting the starting points of the heat collection patterns 41 and 42 and the electrodes 11 and 12 is required.

  The heat collection patterns 41, 42 are formed so that heat is captured over a wide range not only from the vicinity of the temperature sensing element 10 but also from the part away from the temperature sensing element 10 so that the temperature sensing element 10 can efficiently collect heat. Yes. The heat collection pattern 41 is disposed so as not to contact the lead pattern 231, the heat collection pattern 42 is disposed so as not to contact the lead pattern 232, and the heat collection pattern 41 and the heat collection pattern 42 are not contacted. Has been placed. If the lead patterns 231 and 232, the heat collection pattern 41, and the heat collection pattern 42 come into contact with each other, a short circuit occurs and an electrical signal from the temperature sensitive element 10 cannot be taken out.

  The heat collection patterns 41 and 42 are not members related to the transmission of electric signals but members only related to heat conduction, and are thus terminated in the plane of the infrared absorption film 20 without being connected to external components. For this reason, the outflow of heat from the heat collection patterns 41 and 42 to the outside is suppressed. Heat flows in one direction from the end of the heat collection patterns 41, 42 toward the temperature sensing element 10. The heat collection patterns 41 and 42 are formed on the outer peripheral edge of the infrared absorption film 20 starting from the electrodes 11 and 12 of the temperature sensing element 10 in order to capture the amount of heat stored in various places of the infrared absorption film 20 evenly. Since the heat is distributed in the infrared absorption film 20 while repeating branching, the amount of heat distributed in the infrared absorption film 20 is scattered like islands between the branches of the heat collection patterns 41 and 42, and the infrared absorption film 20. The temperature gradient between the temperature sensing element 10 and the temperature sensing element 10 can cause a heat flow toward the temperature sensing element 10. In addition, by forming the heat collection patterns 41 and 42 radially, the range in which heat can be captured can be expanded to the entire infrared absorption film 20, and the heat collection efficiency can be increased.

  As shown in FIG. 8, the heat collection patterns 41 and 42 have a plurality of portions having different thicknesses. In the present embodiment, the plurality of portions having different thicknesses of the heat collection patterns 41 and 42 are arranged so that the thickness increases from the outer peripheral end toward the temperature sensitive element 10. That is, the thick portions of the heat collection patterns 41 and 42 are arranged at positions closer to the temperature sensitive element 10 than the thin portions of the heat collection patterns 41 and 42. As a result, when the thickness of the heat collection patterns 41 and 42 is increased, the thermal resistance is reduced, so that the heat trapped in each of the heat collection patterns 41 and 42 easily flows to the temperature sensing element 10. Conversely, in the present embodiment, the plurality of portions having different thicknesses of the heat collection patterns 41 and 42 are arranged so that the thickness decreases from the temperature sensing element 10 toward the outer peripheral end. Thereby, when the thickness of the heat collection patterns 41 and 42 is reduced, the thermal resistance is increased, so that the outflow of heat to the outside can be suppressed. Moreover, in this embodiment, although the several part from which the thickness of the heat collection patterns 41 and 42 differs is arrange | positioned so that thickness may become thick gradually from the outer peripheral edge part toward the temperature sensing element 10, it is continuously You may arrange | position so that thickness may become thick.

  As shown in FIG. 8, the heat collecting patterns 41 and 42 have a substantially semicircular cross-sectional shape (hereinafter simply referred to as “cross-sectional shape”) along a direction orthogonal to the extending direction. By the way, the heat radiation from the heat collection patterns 41 and 42 is the circumference that touches the air that is not in contact with the infrared absorption film 20 of the heat collection patterns 41 and 42 when the material, the cross-sectional area, and the length in the extending direction are the same. Proportional to length. As described above, the circumferential length is smaller when the cross-sectional shape is substantially semicircular than when the cross-sectional shape is substantially rectangular. Therefore, by making the cross-sectional shape of the heat collection patterns 41 and 42 a shape close to a substantially semicircle, the contact area with air is reduced. Thus, since the contact area to air becomes small, heat radiation is reduced, and heat can be efficiently transferred to the temperature sensing element 10, so that the sensitivity can be increased. The “substantially semicircle” here means not only a semicircle but also a shape close to a semicircle such as a semi-ellipse or a kamaboko shape.

  The material of the heat collection patterns 41 and 42 is preferably excellent in thermal conductivity. As such a material, it is preferable to contain a lot of gold, silver, platinum, copper, aluminum, carbon nanotubes, and the like. The portions of the heat collecting patterns 41 and 42 having different thicknesses may be made of the same material or different materials. Further, the heat collection patterns 41 and 42 and the lead patterns 231 and 232 may be made of the same material, or may be made of different materials. When the heat collection patterns 41 and 42 and the lead patterns 231 and 232 are made of the same material, there is an advantage that the heat collection patterns 41 and 42 and the lead patterns 231 and 232 can be formed in the same process.

  As described above, the temperature sensor 300 according to the present embodiment is formed in at least one of a radial shape and a mesh shape in the plane of the infrared absorption film 20 starting from the temperature sensing element 10, and the amount of heat distributed in the infrared absorption film 20. Are further provided with heat collecting patterns 41, 42 for collecting heat to the temperature sensing element 10, and the heat collecting patterns 41, 42 have portions having different thicknesses, and the thick portions of the heat collecting patterns 41, 42 are collected. The thermal patterns 41 and 42 are disposed at positions closer to the temperature sensitive element 10 than the thin portions. In this case, since the heat collection patterns 41 and 42 are provided, the amount of heat stored in various places of the infrared absorption film 20 can be captured uniformly, and the heat transmitted to the heat collection patterns 41 and 42 can be captured. Since heat is quickly transferred to the temperature sensitive element 10, the sensitivity of the temperature sensor 300 can be further increased. Further, the heat collection patterns 41 and 42 have portions having different thicknesses, and the thick portions of the heat collection patterns 41 and 42 are closer to the temperature sensitive element 10 than the thin portions of the heat collection patterns 41 and 42. Because of the arrangement, a heat transfer path is formed through which heat stored in various places of the infrared absorption film 20 is efficiently transferred to the temperature sensitive element 300. As a result, the responsiveness of the temperature sensor 300 can be improved and the sensitivity can be further increased.

(Modification of Embodiment 3)
Next, a configuration of a temperature sensor 400 that is a modification of the temperature sensor 300 according to the third embodiment of the present invention will be described with reference to FIG. FIG. 9 is a plan view of a modification of the temperature sensor according to the third embodiment of the present invention.

  The temperature sensor 400 includes the infrared absorption film 20, the temperature sensitive element 10, a lead pattern 230, and a heat collection pattern 240. The configurations of the infrared absorption film 20, the temperature sensitive element 10, and the lead pattern 230 are the same as those of the temperature sensor 300 according to the third embodiment. The heat collection pattern 240 is the same as that of the temperature sensor 300 according to the third embodiment except for the shape distributed in the plane of the infrared absorption film 20. Hereinafter, a description will be given focusing on differences from the third embodiment.

  As shown in FIG. 9, the heat collection pattern 240 is formed in a mesh shape in the plane of the infrared absorption film 20 starting from the temperature sensitive element 10. The heat collection pattern 240 is a heat collection member for collecting the amount of heat distributed in the infrared absorption film 20 to the temperature sensitive element 10. In the present modification, the heat absorbing pattern 241 formed in a mesh shape in the plane of the infrared absorbing film 20 starting from the electrode 11 of the temperature sensitive element 10 and the infrared absorbing film 20 starting from the electrode 12 of the temperature sensitive element 10. The heat collecting pattern 242 is formed in a mesh shape in the plane. Specifically, the heat collection pattern 241 has a plurality of trunks that start from the electrode 11 of the temperature-sensitive element 10 and extend toward the outer peripheral edge of the infrared absorption film 20 and branch from each trunk. The ends of the branches are connected to form a mesh shape. Similarly, the heat collection pattern 242 has a plurality of trunks extending from the electrode 12 of the temperature sensing element 10 to the outer peripheral end of the infrared absorption film 20 while repeating branching, and branches branched from the trunks. The ends of each other are connected to form a mesh shape. In this modification, the heat collection patterns 241 and 242 are formed radially in the plane of the infrared absorption film 20 starting from the electrodes 11 and 12 of the temperature sensing element 10. 11 and 12 may be formed radially in the plane of the infrared absorption film 20 starting from the vicinity. However, in this case, a heat collection pattern for connecting the starting points of the heat collection patterns 241 and 242 and the electrodes 11 and 12 is required.

  Also in this modification, since the temperature sensor 400 includes the heat collection patterns 241 and 242, the amount of heat stored in various places of the infrared absorption film 20 can be captured uniformly and the heat collection pattern 241. , 242 promptly transfers heat to the temperature sensing element 10, so that the sensitivity of the temperature sensor 400 can be further enhanced. Further, the heat collection patterns 241 and 242 have portions with different thicknesses, and the thick portions of the heat collection patterns 241 and 242 are closer to the temperature sensitive element 10 than the thin portions of the heat collection patterns 241 and 242. Since it is arranged, a heat transfer path through which the amount of heat stored in various places of the infrared absorption film 20 efficiently transfers to the temperature sensitive element 10 is formed. As a result, the responsiveness of the temperature sensor 400 can be improved and the sensitivity can be further increased.

(Embodiment 4)
Subsequently, the configuration of the temperature sensor 500 according to Embodiment 4 of the present invention will be described with reference to FIGS. 10 and 11. FIG. 10 is a plan view of a temperature sensor according to Embodiment 4 of the present invention. FIG. 11 is a schematic end view of the cut portion along the line EE in FIG. 10. The temperature sensor 500 according to the fourth embodiment is different from the temperature sensor 300 according to the third embodiment in that a heat collecting film 60 is provided. Hereinafter, a description will be given focusing on differences from the third embodiment.

  Similar to the third embodiment, the temperature sensor 500 includes the infrared absorption film 20, the temperature sensitive element 10, the lead pattern 230, and the heat collection pattern 40. However, in this embodiment, the heat collecting film 60 is provided, which is different from the third embodiment. Hereinafter, a description will be given focusing on differences from the third embodiment.

  As shown in FIG. 10, the heat collection film 60 is spread on the infrared absorption film 20 and around the heat collection pattern 40 in a plane. In the present embodiment, a heat collecting film 61 extending around the heat collecting pattern 41 and a heat collecting film 62 spreading around the heat collecting pattern 42 are provided. More specifically, the heat collection film 61 is formed so as to surround the entire circumference of the heat collection pattern 41 including a trunk extending from the electrode 11 of the temperature sensing element 10 and a branch extending from the trunk while repeating branching. ing. Similarly, the heat collection film 62 is formed so as to surround the entire periphery of the heat collection pattern 42 including a trunk extending from the electrode 12 of the temperature sensitive element 10 and a branch extending from the trunk while repeating branching. The heat collection film 61 is disposed so as not to contact the lead pattern 231 and the heat collection pattern 42, and the heat collection film 62 is disposed so as not to contact the lead pattern 232 and the heat collection pattern 41. The heat collecting film 62 is also arranged so as not to contact. If the lead patterns 231 and 232, the heat collection patterns 41 and 42, and the heat collection films 61 and 62 come into contact with each other, a short circuit occurs and an electrical signal from the temperature sensing element 10 cannot be extracted. The roughness of the contact surface between the heat collecting films 61 and 62 and the infrared absorbing film 20 is preferably about 1 to 2.5 μm. That is, it becomes about 1/4 of the wavelength band of infrared rays. As a result, the infrared light transmitted through the infrared absorption film 20 can be absorbed at the contact surface between the infrared absorption film 20 and the heat collecting films 61 and 62, and more heat can be absorbed. And the sensitivity can be further improved.

  As shown in FIG. 11, the heat collecting films 61 and 62 are thinner than the heat collecting patterns 41 and 42. Specifically, the thickness of the heat collection patterns 41 and 42 is about 10 μm to 70 μm, while the thickness of the heat collection films 61 and 62 is 5 μm or less. Thus, by making the thickness of the heat collection films 61 and 62 thinner than the thickness of the heat collection patterns 41 and 42, the heat capacity of the heat collection films 61 and 62 becomes small, and the influence on the responsiveness is small.

  The material of the heat collecting films 61 and 62 is preferably excellent in thermal conductivity. As such a material, it is preferable to contain a lot of gold, silver, platinum, copper, aluminum, carbon nanotubes, and the like. The heat collecting films 61 and 62 may be made of the same material as the lead patterns 231 and 232 and the heat collecting patterns 41 and 42 or may be made of different materials. When the heat collecting films 61 and 62, the lead patterns 231 and 232, and the heat collecting patterns 41 and 42 are made of the same material, there is an advantage that they can be formed in the same process. Here, since the infrared absorption film 20 is a resin, the thermal resistance is large, and the movement of the amount of heat distributed is difficult to occur with the infrared absorption film 20 alone. On the other hand, since the heat collecting films 61 and 62 are made of a material having a lower thermal resistance than the infrared absorbing film 20 similarly to the heat collecting patterns 41 and 42, the infrared absorbing films are added by adding the heat collecting films 61 and 62. The amount of heat distributed to 20 easily moves to the heat collection patterns 41 and 42. That is, the amount of heat transmitted to the heat collection patterns 41 and 42 can be increased, and heat can be efficiently transferred to the temperature sensing element 10. As a result, the sensitivity of the temperature sensor 500 can be further increased.

  As described above, the temperature sensor 500 according to the present embodiment further includes the heat collecting films 61 and 62 spreading on the infrared absorption film 20 and around the heat collecting patterns 41 and 42. The thickness is smaller than the thickness of the heat collection patterns 41 and 42. Thereby, the heat quantity stored in the infrared absorption film 20 that could not be captured by the heat collection patterns 41 and 42 can be reliably captured, and the thickness of the heat collection films 61 and 62 is greater than the thickness of the heat collection patterns 41 and 42. Since it is thin and has high thermal resistance, it is possible to promote the flow of heat from the heat collecting films 61 and 62 to the heat collecting patterns 41 and 42. As a result, the responsiveness of the temperature sensor 500 can be improved and the sensitivity can be further increased.

(Modification of Embodiment 4)
Next, a configuration of a temperature sensor 600 that is a modification of the temperature sensor 500 according to Embodiment 4 of the present invention will be described with reference to FIG. FIG. 12 is a plan view of a modification of the temperature sensor according to the fourth embodiment of the present invention.

  The temperature sensor 600 includes the infrared absorption film 20, the temperature sensitive element 10, the lead pattern 230, the heat collection pattern 40, and the heat collection film 160. The configurations of the infrared absorption film 20, the temperature sensitive element 10, the lead pattern 230, and the heat collection pattern 40 are the same as those of the temperature sensor 500 according to the fourth embodiment. The heat collecting film 160 is the same as the temperature sensor 500 according to the fourth embodiment except for the shape distributed in the plane of the infrared absorption film 20. Hereinafter, a description will be given focusing on differences from the fourth embodiment.

  As shown in FIG. 12, the heat collection film 160 is spread on the infrared absorption film 20 and around the heat collection pattern 40. In the present embodiment, the heat collecting film 161 spreading around the heat collecting pattern 41 and the heat collecting film 162 spreading around the heat collecting pattern 42 are provided. More specifically, the heat collection film 161 is formed around the root portions of the plurality of trunks of the heat collection pattern 41 extending while repeating branching from the electrode 11 of the temperature sensing element 10, and the root portions of the respective trunks. The heat collecting films 161 formed on each other are integrally formed. That is, the heat collecting film 161 is not formed near the outer peripheral end portions of the plurality of trunks. Similarly, the heat collection film 162 is formed around the root portions of a plurality of trunks of the heat collection pattern 42 extending while repeating branching from the electrode 12 of the temperature sensing element 10, and is formed at the root portions of the respective trunks. The heat collecting films 162 are integrally formed. That is, the heat collecting film 162 is not formed near the outer peripheral end portions of the plurality of trunks.

  Also in this modified example, since the temperature sensor 600 includes the heat collecting films 161 and 162 that spread on the infrared absorbing film 20 and around the heat collecting patterns 41 and 42, the temperature sensor 600 is captured by the heat collecting patterns 41 and 42. The amount of heat stored in the infrared absorbing film 20 that could not be captured can be reliably captured, and the thickness of the heat collecting films 161 and 162 is smaller than the thickness of the heat collecting patterns 41 and 42, and the thermal resistance is large. , 162 to the heat collecting patterns 41 and 42 can be promoted. As a result, the responsiveness of the temperature sensor 600 can be improved and the sensitivity can be further increased.

(Embodiment 5)
Subsequently, the configuration of the temperature sensor 700 according to Embodiment 5 of the present invention will be described with reference to FIGS. FIG. 13 is a plan view of a temperature sensor according to the fifth embodiment of the present invention. FIG. 14 is a schematic end view of the cut portion taken along line FF in FIG. 13. The temperature sensor 700 according to the fifth embodiment is different from the temperature sensor 400 according to the modified example of the third embodiment in that a heat collecting film 260 is provided. Hereinafter, a description will be given focusing on differences from the modification of the third embodiment.

  The temperature sensor 700 includes the infrared absorption film 20, the temperature sensitive element 10, the lead pattern 230, and the heat collection pattern 240 as in the modification of the third embodiment. However, in this embodiment, the heat collecting film 260 is provided, and this point is different from the modified example of the third embodiment. Hereinafter, a description will be given focusing on differences from the modification of the third embodiment.

  As shown in FIG. 13, the heat collection film 260 extends on the infrared absorption film 20 and around the heat collection pattern 240. In the present embodiment, a heat collecting film 261 spreading around the heat collecting pattern 241 and a heat collecting film 262 spreading around the heat collecting pattern 242 are provided. More specifically, the heat collecting film 261 is formed by a portion formed along a branch or a trunk that constitutes an outer peripheral portion serving as an outer frame of the mesh-shaped heat collecting pattern 241 and a branch or a trunk of the heat collecting pattern 241. It has a portion formed in the enclosed region. Similarly, the heat collection film 262 is a region surrounded by a branch or trunk that forms the outer peripheral portion of the mesh-shaped heat collection pattern 242 and a branch or trunk that forms the outer peripheral portion of the mesh-like heat collection pattern 242. Having a portion formed therein. The heat collection film 261 is disposed so as not to contact the lead pattern 231 and the heat collection pattern 242, and the heat collection film 262 is disposed so as not to contact the lead pattern 232 and the heat collection pattern 241. And the heat collecting film 262 are also arranged so as not to contact each other. If the lead patterns 231 and 232, the heat collection patterns 241 and 242 and the heat collection films 261 and 262 come into contact with each other, a short circuit occurs and an electric signal from the temperature sensing element 10 cannot be taken out. The roughness of the contact surface between the heat collecting films 261 and 262 and the infrared absorbing film 20 is preferably about 1 to 2.5 μm. That is, it becomes about 1/4 of the wavelength band of infrared rays. As a result, the infrared light transmitted through the infrared absorption film 20 can be absorbed at the contact surface between the infrared absorption film 20 and the heat collection films 261 and 262, and more heat can be absorbed, thereby further improving the sensitivity. be able to.

  As shown in FIG. 14, the heat collecting films 261 and 262 are thinner than the heat collecting patterns 241 and 242. Specifically, the thickness of the heat collection patterns 241 and 242 is about 10 μm to 70 μm, whereas the thickness of the heat collection films 261 and 262 is 5 μm or less. Thus, by making the thickness of the heat collection films 261 and 262 thinner than the thickness of the heat collection patterns 241 and 242, the heat capacity of the heat collection films 261 and 262 is reduced and the influence on the responsiveness is small.

  The material of the heat collecting films 261 and 262 is preferably excellent in thermal conductivity. As such a material, it is preferable to contain a lot of gold, silver, platinum, copper, aluminum, carbon nanotubes, and the like. The heat collecting films 261 and 262 may be made of the same material as the lead patterns 231 and 232 and the heat collecting patterns 241 and 242 or may be made of different materials. When the heat collecting films 261 and 262, the lead patterns 231 and 232, and the heat collecting patterns 241 and 242 are made of the same material, there is an advantage that they can be formed in the same process. Here, since the infrared absorption film 20 is a resin, the thermal resistance is large, and the movement of the amount of heat distributed is difficult to occur with the infrared absorption film 20 alone. On the other hand, since the heat collecting films 261 and 262 are made of a material having a lower thermal resistance than the infrared absorbing film 20 similarly to the heat collecting patterns 241 and 242, the infrared absorbing films are added by adding the heat collecting films 261 and 262. The amount of heat distributed to 20 easily moves to the heat collection patterns 241 and 242. That is, the amount of heat transmitted to the heat collection patterns 241 and 242 can be increased, and heat can be efficiently transferred to the temperature sensing element 10. As a result, the sensitivity of the temperature sensor 700 can be further increased.

  As described above, the temperature sensor 700 according to the present embodiment further includes the heat collection films 261 and 262 that are spread on the infrared absorption film 20 and around the heat collection patterns 241 and 242. The thickness is smaller than the thickness of the heat collection patterns 241 and 242. Thereby, the heat quantity stored in the infrared absorption film 20 that could not be captured by the heat collection patterns 241 and 242 can be reliably captured, and the thickness of the heat collection films 261 and 262 is more than the thickness of the heat collection patterns 241 and 242. Since it is thin and has a high thermal resistance, the heat flow from the heat collecting films 261 and 262 to the heat collecting patterns 241 and 242 can be promoted. As a result, the responsiveness of the temperature sensor 700 can be improved and the sensitivity can be further increased.

(Modification of Embodiment 5)
Subsequently, a configuration of a temperature sensor 800 which is a modification of the temperature sensor 700 according to the fifth embodiment of the present invention will be described with reference to FIG. FIG. 15 is a plan view of a modification of the temperature sensor according to the fifth embodiment of the present invention.

  The temperature sensor 800 includes the infrared absorption film 20, the temperature sensitive element 10, the lead pattern 230, the heat collection pattern 240, and the heat collection film 360. The configurations of the infrared absorption film 20, the temperature sensitive element 10, the lead pattern 230, and the heat collection pattern 240 are the same as those of the temperature sensor 700 according to the fifth embodiment. The heat collection film 360 is the same as the temperature sensor 700 according to the fifth embodiment except for the shape distributed in the plane of the infrared absorption film 20. Hereinafter, a description will be given focusing on differences from the fifth embodiment.

  As shown in FIG. 15, the heat collection film 360 extends on the infrared absorption film 20 and around the heat collection pattern 240. In the present embodiment, a heat collecting film 361 spreading around the heat collecting pattern 241 and a heat collecting film 362 spreading around the heat collecting pattern 242 are provided. More specifically, the heat collecting film 361 is formed by a portion formed along a branch or a trunk constituting an outer peripheral portion serving as an outer frame of the mesh-shaped heat collecting pattern 241 and a branch or a trunk of the heat collecting pattern 241. It has a portion formed in the enclosed region. However, in this modification, an opening 70 is provided in a part or all of the heat collecting film 361 formed in the region surrounded by the branches or trunks of the heat collecting pattern 241. Similarly, the heat collecting film 362 is a region surrounded by a branch or trunk that forms an outer peripheral portion that forms an outer frame of the mesh-shaped heat collecting pattern 242 and a branch or trunk of the heat collecting pattern 242. Having a portion formed therein. However, in the present modification, an opening 70 is provided in part or all of the heat collecting film 362 formed in a region surrounded by the branches or trunks of the heat collecting pattern 242.

  Also in this modified example, since the temperature sensor 800 includes the heat collecting films 361 and 362 that are spread on the infrared absorbing film 20 and around the heat collecting patterns 241 and 242, the temperature sensor 800 is captured by the heat collecting patterns 241 and 242. The amount of heat stored in the infrared absorption film 20 that could not be completely captured can be reliably captured, and the thickness of the heat collection films 361 and 362 is smaller than the thickness of the heat collection patterns 241 and 242 and the thermal resistance is large. , 362 to heat collecting patterns 241 and 242 can be promoted. As a result, the responsiveness of the temperature sensor 800 can be improved and the sensitivity can be further increased.

(Embodiment 6)
Next, the configuration of the temperature sensor 900 according to Embodiment 6 of the present invention will be described with reference to FIGS. FIG. 16 is a plan view of a temperature sensor according to Embodiment 6 of the present invention. FIG. 17 is a schematic end view of the cutting section along the line GG in FIG. The temperature sensor 900 according to the sixth embodiment is different from the temperature sensor 200 according to the second embodiment in that a heat collecting film 460 is provided. Hereinafter, a description will be given focusing on differences from the second embodiment.

  Similar to the second embodiment, the temperature sensor 900 includes the infrared absorption film 20, the temperature sensitive element 10, and the lead pattern 230. However, in this embodiment, a heat collecting film 460 is provided, which is different from the second embodiment. Hereinafter, a description will be given focusing on differences from the second embodiment.

  As shown in FIG. 16, the heat collection film 460 spreads radially in the plane of the infrared absorption film 20 starting from the temperature sensing element 10. The heat collection film 460 is a heat collection member for collecting the amount of heat distributed in the infrared absorption film 20 in the temperature sensitive element 10. In the present embodiment, the heat collecting film 461 formed radially in the plane of the infrared absorbing film 20 starting from the electrode 11 of the temperature sensitive element 10 and the infrared absorbing film 20 starting from the electrode 12 of the temperature sensitive element 10 are used. A heat collecting film 462 is formed radially in the plane. More specifically, the heat collecting film 461 starts from the electrode 11 of the temperature sensing element 10 and is formed in a film distributed in a region located above the lead pattern 231 and a region located below the lead pattern 231 in the drawing. It consists of a distributed film. Similarly, the heat collecting film 462 is a film distributed in a region located above the lead pattern 232 in the figure and a film located in a region located below the lead pattern 232 in the figure starting from the electrode 12 of the temperature sensing element 10. Consists of. Note that the size of the film distributed in the region located above the lead pattern 231 of the heat collecting film 461 and the size of the film distributed in the region located below the lead pattern 231 in the drawing are larger than the size of the temperature sensing element 10 respectively. The film distributed in the region located above the lead pattern 232 of the heat collecting film 462 and the film distributed in the region located below the lead pattern 232 are larger than the size of the temperature sensing element 10, respectively. In addition, the overall size of the heat collecting film 460 is preferably within 80% of the heat collecting range 51 which is an effective irradiation area defined by infrared rays irradiated from the heat source. In this case, the performance of the heat collecting film 460 can be maximized.

  As shown in FIG. 17, the heat collecting films 461 and 462 are thinner than the lead patterns 231 and 232. Specifically, the lead patterns 231 and 232 have a thickness of about 10 μm to 70 μm, while the heat collecting films 461 and 462 have a thickness of 5 μm or less. Thus, by making the thickness of the heat collection films 461 and 462 thinner than the thickness of the lead patterns 231 and 232, the heat capacity of the heat collection films 461 and 462 is reduced, and the influence on the responsiveness is small.

  The material of the heat collecting films 461 and 462 is preferably excellent in thermal conductivity. As such a material, it is preferable to contain a lot of gold, silver, platinum, copper, aluminum, carbon nanotubes, and the like. The heat collection films 461 and 462 may be made of the same material as the lead patterns 231 and 232 or may be made of different materials. When the heat collecting films 461 and 462 and the lead patterns 231 and 232 are made of the same material, there is an advantage that they can be formed in the same process. Here, since the infrared absorption film 20 is a resin, the thermal resistance is large, and the movement of the amount of heat distributed is difficult to occur with the infrared absorption film 20 alone. On the other hand, since the heat collection films 461 and 462 are made of a material having a lower thermal resistance than the infrared absorption film 20, the amount of heat distributed in the infrared absorption film 20 by adding the heat collection films 461 and 462 is the lead pattern 231. , 232 is easily moved. That is, the amount of heat transferred to the lead patterns 231 and 232 can be increased, and heat can be transferred to the temperature sensitive element 10 efficiently. As a result, the sensitivity of the temperature sensor 500 can be further increased.

  As described above, the temperature sensor 900 according to the present embodiment includes the heat collection films 461 and 462 that are on the infrared absorption film 20 and spread around the lead patterns 231 and 232, and the thickness of the heat collection films 461 and 462. Is thinner than the thickness of the lead patterns 231 and 232. Therefore, the amount of heat stored in the infrared absorption film 20 that could not be captured by the lead patterns 231 and 232 can be reliably captured, and the thickness of the heat collecting films 461 and 462 is smaller than the thickness of the lead patterns 231 and 232, and the thermal resistance. Therefore, the flow of heat from the heat collecting films 461 and 462 to the lead patterns 231 and 232 can be promoted. Further, by forming the heat collecting films 461 and 462 in a radial manner, it is possible to expand the range in which heat can be captured to the entire infrared absorbing film 20 and increase the heat collecting efficiency. As a result, the responsiveness of the temperature sensor 900 can be improved and the sensitivity can be further increased.

  Hereinafter, it will be specifically described using Examples 1 to 4 and a conventional example that the sensitivity can be improved by the present embodiment. However, the present invention is not limited to these examples.

  In Example 1, the temperature sensor 100 of Embodiment 1 described above was used. In Example 2, the temperature sensor 300 of Embodiment 3 described above was used. In Example 3, the temperature sensor 500 of Embodiment 4 described above was used. In Example 4, the temperature sensor 900 of Embodiment 6 described above was used. In the conventional example, the temperature sensor 1000 shown in FIGS. 22 and 23 is used. FIG. 22 is a plan view of a temperature sensor according to a conventional example. FIG. 23 is a schematic end view of the cutting section taken along the line HH in FIG.

  First, the configuration of the temperature sensor 1000 according to the conventional example will be described. As shown in FIG. 22, the temperature sensor 1000 includes an infrared absorption film 21, a temperature sensitive element 110, and a lead pattern 330.

  The infrared absorbing film 21 absorbs infrared rays radiated from a heat source (not shown) and rises in temperature.

  The temperature sensing element 110 outputs an electrical signal corresponding to the temperature of the heat source by detecting the heat of the infrared absorption film 21. In this conventional example, the temperature sensing element 110 includes a pair of electrodes 13 and 14 and is disposed on the surface of the infrared absorption film 21 opposite to the surface on which infrared rays from the heat source are incident.

  The lead pattern 330 transfers the amount of heat distributed in the infrared absorption film 21 to the temperature sensitive element 110. The lead pattern 330 outputs an electrical signal from the temperature sensing element 110 to the outside. That is, the change in the electrical characteristics corresponding to the temperature change of the temperature sensing element 110 is taken out from the lead pattern 330 to the outside as an electrical signal corresponding to the temperature of the heat source. The lead pattern 330 has a pair of lead patterns 331 and 332. One end of the lead pattern 331 is connected to the electrode 13 of the temperature sensing element 110, and the other end extends to the outside. One end of the lead pattern 332 is connected to the electrode 14 of the temperature sensing element 110, and the other end extends to the outside. In this conventional example, the lead patterns 331 and 332 are provided with a fold-shaped refracting portion between one end and the other end. Specifically, the lead patterns 331 and 332 extend in a plurality of directions upward and downward in the drawing from the electrodes 13 and 14 of the temperature sensing element 110 to the outside.

  In these Examples 1 to 4 and the conventional example, each dimension and each material were set as follows. That is, as the infrared absorbing film 20 in Examples 1 to 4, a polyimide having a size of 13 mm × 6 mm and a thickness of 30 μm is used, and the temperature sensitive element 10 is a thermistor, and lead patterns 31 and 32 (231 and 232). As the part from the middle part to the temperature sensing element 10 in the entire lead patterns 31, 32 (231, 232), that is, the part of the thick part having a thickness of 30 μm, the width of 0.2 mm, the part from the middle part to the outside, That is, copper having a thin thickness of 10 μm and a width of 0.2 mm was used. Further, as the heat collecting patterns 41 and 42 in Examples 2 and 3, copper having a thickness of 30 μm and a width of 70 μm, a thickness of 10 μm and a width of 70 μm was used. Furthermore, copper having a thickness of 1 μm was used as the heat collecting films 61 and 62 (461 and 462) in Examples 3 and 4. On the other hand, a polyimide having a size of 13 mm × 6 mm and a thickness of 30 μm is used as the infrared absorbing film 21 in the conventional example, a thermistor is used as the temperature sensitive element 110, and a copper having a thickness of 30 μm is used as the lead patterns 331 and 332. Was used. In Examples 1 to 4 and the conventional example, a heat source maintained at 180 ° C. was used, and the ambient environment was set to room temperature.

  About Examples 1-4 and the conventional example, the temperature rise with progress of time was measured. The measurement results are shown in FIGS.

  The graph shown in FIG. 18 is a graph which shows the temperature rise with progress of time of Example 1 and a prior art example. In FIG. 18, the horizontal axis represents time [sec], and the vertical axis represents the temperature [° C.] of the temperature sensitive element. As shown in FIG. 18, the temperature sensing element 10 of the temperature sensor 100 in Example 1 is about 0.8 ° C. higher in temperature than the temperature sensing element 110 of the temperature sensor 1000 in the conventional example. It was confirmed that the sensitivity of Example 1 was improved as compared with the conventional example.

  The graph shown in FIG. 19 is a graph showing the temperature rise with the passage of time in Examples 1 and 2 and the conventional example. In FIG. 19, the horizontal axis represents time [sec], and the vertical axis represents the temperature [° C.] of the temperature sensitive element. As shown in FIG. 19, the temperature sensing element 10 of the temperature sensor 300 according to the second embodiment is about 1.6 ° C. higher in temperature than the temperature sensing element 110 of the temperature sensor 1000 according to the conventional example. It was confirmed that the sensitivity of Example 2 was improved as compared with the conventional example. The rising slope of the temperature rise of the temperature sensing element 10 of the temperature sensor 300 in the second embodiment is steeper than the rising slope of the temperature rise of the temperature sensing element 110 of the temperature sensor 1000 in the conventional example. It was also confirmed that the responsiveness was improved as compared with the conventional example. The temperature sensing element 10 of the temperature sensor 300 in the second embodiment is about 0.8 ° C. higher than the temperature sensing element 10 of the temperature sensor 100 in the first embodiment. It was also confirmed that the sensitivity was further improved than in Example 1.

  The graph shown in FIG. 20 is a graph showing the temperature rise with the passage of time in Examples 1 and 3 and the conventional example. In FIG. 20, the horizontal axis represents time [sec], and the vertical axis represents the temperature [° C.] of the temperature sensitive element. As shown in FIG. 20, the temperature sensing element 10 of the temperature sensor 500 in the third embodiment has a temperature rise of about 1.76 ° C. higher than the temperature sensing element 110 of the temperature sensor 1000 in the conventional example. It was confirmed that the sensitivity of Example 3 was improved as compared with the conventional example. The rising slope of the temperature rise of the temperature sensing element 10 of the temperature sensor 500 in the third embodiment is steeper than the rising slope of the temperature rise of the temperature sensing element 110 of the temperature sensor 1000 in the conventional example. It was also confirmed that the responsiveness was improved as compared with the conventional example. In addition, the temperature sensing element 10 of the temperature sensor 500 in the third embodiment is about 0.96 ° C. higher in temperature than the temperature sensing element 10 of the temperature sensor 100 in the first embodiment. It was also confirmed that the sensitivity was further improved than in Example 1.

    The graph shown in FIG. 21 is a graph showing the temperature increase with the passage of time in Examples 1 and 4 and the conventional example. In FIG. 21, the horizontal axis represents time [sec], and the vertical axis represents the temperature [° C.] of the temperature sensitive element. As shown in FIG. 21, the temperature sensing element 10 of the temperature sensor 900 in Example 4 is about 1.72 ° C. higher in temperature than the temperature sensing element 110 of the temperature sensor 1000 in the conventional example. It was confirmed that the sensitivity of Example 4 was improved as compared with the conventional example. Further, the rising slope of the temperature rise of the temperature sensing element 10 of the temperature sensor 900 according to the fourth embodiment is steeper than the rising slope of the temperature rise of the temperature sensing element 110 of the temperature sensor 1000 according to the conventional example. It was also confirmed that the responsiveness was improved as compared with the conventional example. Note that the temperature sensing element 10 of the temperature sensor 900 in the fourth embodiment is about 0.92 ° C. higher than the temperature sensing element 10 of the temperature sensor 100 in the first embodiment. It was also confirmed that the sensitivity was further improved than in Example 1.

  The present invention has been described based on the embodiments. The embodiment is an exemplification, and the present invention is not limited by the contents described in the embodiment. The constituent elements described in the embodiments include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the components described in the embodiments can be combined as appropriate.

  In the present embodiment, the heat collection pattern 40 formed in a radial pattern and the heat collection pattern 240 formed in a mesh pattern have been described independently, but the present invention is not limited thereto. For example, the vicinity of the root to be connected to the electrode of the temperature-sensitive element of the heat collection pattern may be formed in a mesh shape, and the vicinity of the outer peripheral edge of the heat collection pattern may be formed in a radial shape. The vicinity of the root to be connected to the electrode of the element may be formed radially, and the vicinity of the outer peripheral end of the heat collection pattern may be formed in a mesh shape. In any case, since the heat collection pattern is provided, the amount of heat stored in each part of the infrared absorption film can be captured evenly, and the heat transmitted to the heat collection pattern is temperature sensitive. Since heat is quickly transferred to the element, the sensitivity of the temperature sensor can be further increased.

  In addition, the combination of the heat collecting film and the heat collecting pattern is preferably changed depending on the intensity distribution of the infrared ray received in the heat collecting range within the effective infrared irradiation area, the area of the heat collecting range, and the like.

  The temperature sensor according to the present invention can be applied to an application for non-contact measurement of the temperature of the heat source.

  DESCRIPTION OF SYMBOLS 10,110 ... Temperature sensing element 11, 12, 13, 14 ... Electrode, 20, 21 ... Infrared absorbing film, 30, 31, 231, 232, 331, 332 ... Lead pattern, 40, 41, 42, 240, 241 , 242 ... Heat collection pattern, 50, 51 ... Heat collection range, 60, 61, 62, 160, 161, 162, 260, 261, 262, 360, 361, 362, 460, 461, 462 ... Heat collection film, 70 ... opening, 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000 ... temperature sensor.

Claims (7)

  Infrared absorbing film that generates heat by absorbing infrared rays radiated from a heat source, a temperature sensitive element that outputs an electrical signal corresponding to the temperature of the heat source by detecting the amount of heat of the infrared absorbing film, and the infrared absorbing film A lead pattern for transferring the amount of distributed heat to the thermosensitive element and outputting the electrical signal to the outside, the lead pattern having a portion having a different thickness, and the portion having a thick thickness of the lead pattern A temperature sensor, wherein the temperature sensor is disposed at a position closer to the temperature sensitive element than a thin portion of the lead pattern.   The lead pattern includes a plurality of portions with different thicknesses, and the plurality of portions with different thicknesses of the lead pattern are arranged so that the thickness increases from the outside toward the temperature sensitive element. The temperature sensor according to 1.   3. The heat collection film according to claim 1, wherein the heat collection film is provided on the infrared absorption film and spreads around the lead pattern, and the thickness of the heat collection film is smaller than the thickness of the lead pattern. The temperature sensor according to one item.   A heat collection pattern is formed in the surface of the infrared absorption film starting from the temperature sensing element, at least in a radial or mesh shape, and for collecting the amount of heat distributed in the infrared absorption film to the temperature sensing element. Further, the heat collection pattern has portions having different thicknesses, and the thick portion of the heat collection pattern is disposed closer to the temperature sensing element than the thin portion of the heat collection pattern. The temperature sensor according to any one of claims 1 and 2. A heat collecting film extending on the infrared absorbing film and surrounding the heat collecting pattern;
The temperature sensor according to claim 4, wherein a thickness of the heat collection film is smaller than a thickness of the heat collection pattern.   The temperature sensor according to any one of claims 1 to 3, wherein a cross-sectional shape along a direction orthogonal to the extending direction of the lead pattern is a substantially semicircle.   6. The temperature sensor according to claim 4, wherein a cross-sectional shape along a direction orthogonal to an extending direction of at least one of the lead pattern and the heat collection pattern is a substantially semicircle.