JP5920388B2 - Temperature sensor - Google Patents

Temperature sensor Download PDF

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JP5920388B2
JP5920388B2 JP2014068543A JP2014068543A JP5920388B2 JP 5920388 B2 JP5920388 B2 JP 5920388B2 JP 2014068543 A JP2014068543 A JP 2014068543A JP 2014068543 A JP2014068543 A JP 2014068543A JP 5920388 B2 JP5920388 B2 JP 5920388B2
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JP2014149300A (en
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健太郎 潮田
健太郎 潮田
小林　浩
浩 小林
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Description

本発明は熱源の温度を非接触測定するための温度センサに関する。   The present invention relates to a temperature sensor for non-contact measurement of the temperature of a heat source.

熱源の温度を非接触測定するための温度センサとして、熱源から輻射される赤外線の熱量を検出する方式が知られている。この種の温度センサは、熱源からの赤外線を効率よく吸収する赤外線吸収膜を備えており、赤外線受光に起因する赤外線吸収膜の温度上昇を感温素子で検知する。感温素子は、温度に対応して電気的特性が変化する温度特性を有しており、感温素子から出力される電気信号に基づいて熱源の温度を推定することができる。特開平１１−２２３５５５号公報には、保持体の開口部から導入された赤外線を受光することにより発熱する樹脂フィルムの熱量を検知用感温素子で検出するとともに、熱源からの輻射熱や周囲雰囲気温度によって変動する保持体の温度を補償用感温素子で検出し、温度補償を行った上で熱源の温度を測定する温度センサが提案されている。   As a temperature sensor for non-contact measurement of the temperature of the heat source, a method of detecting the amount of infrared heat radiated from the heat source is known. This type of temperature sensor includes an infrared absorption film that efficiently absorbs infrared rays from a heat source, and a temperature-sensitive element detects an increase in temperature of the infrared absorption film due to infrared reception. The temperature sensing element has a temperature characteristic in which an electrical characteristic changes corresponding to the temperature, and the temperature of the heat source can be estimated based on an electric signal output from the temperature sensing element. In JP-A-11-223555, the amount of heat of a resin film that generates heat by receiving infrared light introduced from an opening of a holding body is detected by a temperature sensing element for detection, and radiant heat from a heat source or ambient ambient temperature is detected. There has been proposed a temperature sensor that detects the temperature of the holding body, which fluctuates depending on the temperature, using a compensation temperature sensing element, performs temperature compensation, and measures the temperature of the heat source.

特開平１１−２２３５５５号公報JP 11-223555 A

しかし、保持体の熱容量は大きいため、熱源から赤外線の放射開始直後や放射終了直後において、保持体の温度が熱源の温度変化に追従することができず、正確な温度測定をすることが困難である。また、補償用感温素子は開口部の外にあるため、補償用感温素子と検知用感温素子との熱的条件に違いが生じ、温度補償の精度が低下する虞がある。   However, since the heat capacity of the holding body is large, the temperature of the holding body cannot follow the temperature change of the heat source immediately after the start of radiation of infrared rays from the heat source or immediately after the end of radiation, making it difficult to accurately measure the temperature. is there. Further, since the compensation temperature sensing element is outside the opening, there is a risk that the thermal conditions of the compensation temperature sensing element and the detection temperature sensing element differ, and the accuracy of temperature compensation is reduced.

そこで、本発明は、このような問題を解決し、温度追従性及び温度補償性に優れた温度センサを提案することを課題とする。   Therefore, an object of the present invention is to solve such problems and propose a temperature sensor excellent in temperature followability and temperature compensation.

上記の課題を解決するため、本発明に係わる温度センサは、熱源から入射する赤外線を吸収する赤外線吸収膜と、赤外線吸収膜上の赤外線入射領域に配置され、熱源の温度に対応した電気信号を出力する検知用感温素子と、赤外線が遮蔽された領域に配置され、検知用感温素子にブリッジ接続する補償用感温素子と、熱源から輻射される赤外線を前記赤外線吸収膜に導入するための開口部を有する筐体と、筐体の開口部内に配置され、赤外線の有効受光範囲を制限するための開口部及び前記補償用感温素子を赤外線から遮蔽するための遮蔽部とを有するアパーチャと、を備え、開口部を有する筐体は、熱源から輻射された赤外線が、赤外線吸収膜に直接入射させる構造であり、
アパーチャは、赤外線吸収膜に近接して設置されており、
補償用感温素子は筐体の開口部の内部に配置されている。これにより、検知用感温素子と補償用感温素子との、赤外線の輻射による要因以外の熱的条件を近づけることができ、温度補償性能が最適化される。
In order to solve the above problems, a temperature sensor according to the present invention is arranged in an infrared absorbing film that absorbs infrared rays incident from a heat source and an infrared incident region on the infrared absorbing film, and outputs an electric signal corresponding to the temperature of the heat source. A temperature sensing element for output, a temperature sensing element for compensation that is arranged in a region where infrared rays are shielded and bridge-connected to the temperature sensing element for detection, and infrared rays radiated from a heat source are introduced into the infrared absorbing film. An aperture having a plurality of openings, an opening disposed within the opening of the housing for limiting the effective infrared light receiving range, and a shielding portion for shielding the compensating temperature sensing element from infrared rays. And a housing having an opening is a structure in which infrared rays radiated from a heat source are directly incident on an infrared absorption film,
The aperture is installed close to the infrared absorbing film,
The compensating temperature sensitive element is disposed inside the opening of the housing. As a result, the thermal conditions other than the factor caused by the infrared radiation between the temperature sensing element for detection and the temperature sensing element for compensation can be brought close to each other, and the temperature compensation performance is optimized.

また本発明に係わる温度センサは、補償用感温素子は周囲雰囲気に接してもよい。これにより、赤外線の輻射による要因以外の熱的条件の一つである周囲雰囲気の温度についても、検知用感温素子と補償用感温素子との熱的条件を近づけることができ、より温度補償性能が最適化される。   In the temperature sensor according to the present invention, the compensating temperature sensitive element may be in contact with the ambient atmosphere. This makes it possible to bring the thermal conditions of the sensing temperature sensor and the compensation temperature sensor closer to the ambient temperature, which is one of the thermal conditions other than the factor due to infrared radiation, and more temperature compensation. Performance is optimized.

本発明によれば、検知用感温素子と補償用感温素子との赤外線の輻射による要因以外の熱的条件を近づけることができ、温度追従性及び温度補償性に優れた温度センサを提案できる。   According to the present invention, thermal conditions other than the factor caused by infrared radiation between the sensing temperature sensor and the compensation temperature sensor can be brought close to each other, and a temperature sensor excellent in temperature followability and temperature compensation can be proposed. .

本実施形態に係わる温度センサの検出原理を示す回路図である。It is a circuit diagram which shows the detection principle of the temperature sensor concerning this embodiment. 本実施形態に係わる温度センサの全体斜視図である。It is a whole perspective view of the temperature sensor concerning this embodiment. 本実施形態に係わる温度センサの分解斜視図である。It is a disassembled perspective view of the temperature sensor concerning this embodiment. 本実施形態に係わる温度センサの断面図である。It is sectional drawing of the temperature sensor concerning this embodiment. 本実施形態に係わる赤外線吸収膜の配線パターンを示す模式図である。It is a schematic diagram which shows the wiring pattern of the infrared rays absorption film concerning this embodiment. 本実施形態に係わる赤外線吸収膜の配線パターンを示す模式図である。It is a schematic diagram which shows the wiring pattern of the infrared rays absorption film concerning this embodiment. 図５及び図６の７−７線断面図である。FIG. 7 is a cross-sectional view taken along line 7-7 in FIGS. 5 and 6.

以下、各図を参照しながら本発明に係わる実施形態について説明する。同一の部材については同一の符号を付すものとし、重複する説明を省略する。なお、図面は、模式的なものであり、部材相互間の寸法の比率や部材の形状等は、本発明の効果が得られる範囲内で現実のセンサ構造とは異なっていてもよい。   Embodiments according to the present invention will be described below with reference to the drawings. The same members are denoted by the same reference numerals, and redundant description is omitted. The drawings are schematic, and the ratio of dimensions between members, the shape of the members, and the like may be different from the actual sensor structure within a range where the effects of the present invention can be obtained.

図１は本実施形態に係わる温度センサ１０の検出原理を示す回路図である。温度センサ１０は、直列接続された検知用感温素子３１及び固定抵抗素子３３から成るハーフブリッジ回路と、直列接続された補償用感温素子３２及び固定抵抗素子３４から成るハーフブリッジ回路とが並列接続されたフルブリッジ回路を有している。二つの固定抵抗素子３３，３４の接続点と、二つの感温素子３１，３２の接続点との間には、電源３５が接続されており、フルブリッジ回路に電流が流れるように構成されている。検知用感温素子３１は、熱源から輻射される赤外線の熱量を検知するためのセンサ素子であり、補償用感温素子３２は、周囲雰囲気からの熱量を検知するためのセンサ素子である。検知用感温素子３１が受け取る熱量は、熱源から輻射される赤外線の熱量に限らず、周囲雰囲気からの熱量も受け取るため、周囲雰囲気からの熱量を補償用感温素子３２で検出することにより、熱源から放射される赤外線の熱量（即ち、熱源の温度）を推定することができる。このため、検知用感温素子３１は、熱源から輻射される赤外線を受光できるように配置される一方、補償用感温素子３２は、熱源から放射される赤外線から遮蔽されるように（言い換えれば、周囲雰囲気からのみ熱量を受取るように）配置される。   FIG. 1 is a circuit diagram showing the detection principle of the temperature sensor 10 according to this embodiment. In the temperature sensor 10, a half bridge circuit composed of a sensing temperature sensing element 31 and a fixed resistance element 33 connected in series and a half bridge circuit composed of a compensation temperature sensing element 32 and a fixed resistance element 34 connected in series are arranged in parallel. It has a connected full bridge circuit. A power source 35 is connected between the connection point of the two fixed resistance elements 33 and 34 and the connection point of the two temperature sensing elements 31 and 32, and is configured so that a current flows through the full bridge circuit. Yes. The temperature sensing element 31 for detection is a sensor element for detecting the amount of infrared radiation radiated from the heat source, and the temperature sensor 32 for compensation is a sensor element for detecting the amount of heat from the ambient atmosphere. The amount of heat received by the temperature sensing element 31 for detection is not limited to the amount of heat of infrared rays radiated from the heat source, but also the amount of heat from the ambient atmosphere, so that the amount of heat from the ambient atmosphere is detected by the temperature sensing element 32 for compensation. The amount of infrared heat radiated from the heat source (ie, the temperature of the heat source) can be estimated. For this reason, the temperature sensing element 31 for detection is arranged so as to receive infrared rays radiated from the heat source, while the temperature sensing element 32 for compensation is shielded from infrared rays radiated from the heat source (in other words, To receive heat only from the ambient atmosphere).

感温素子３１，３２は、温度に応じて電気的特性が変化するセンサ素子であればよく、例えば、抵抗温度特性を有するサーミスタ、サーモパイル、金属測温度体等が好適である。感温素子３１，３２の温度変化に対応する電気特性の変化は、検出温度に対応する電気信号として外部に取り出される。例えば、感温素子３１，３２が抵抗温度特性を有するサーミスタである場合には、感温素子３１，３２の温度変化は、抵抗値変化として現れる。感温素子３１，３２に予め所定の電流を流しておくことにより、感温素子３１，３２の抵抗値変化は、電圧変化として検出される。感温素子３１，３２の出力電圧は、検出温度に対応する電気信号として信号処理される。   The temperature sensitive elements 31 and 32 may be sensor elements whose electrical characteristics change according to temperature. For example, a thermistor, a thermopile, a metal thermometer having a resistance temperature characteristic, and the like are suitable. The change in the electrical characteristics corresponding to the temperature change of the temperature sensitive elements 31 and 32 is extracted to the outside as an electrical signal corresponding to the detected temperature. For example, when the temperature sensitive elements 31 and 32 are thermistors having resistance temperature characteristics, a temperature change of the temperature sensitive elements 31 and 32 appears as a resistance value change. By causing a predetermined current to flow through the temperature sensitive elements 31 and 32 in advance, a change in resistance value of the temperature sensitive elements 31 and 32 is detected as a voltage change. The output voltage of the temperature sensitive elements 31 and 32 is signal-processed as an electrical signal corresponding to the detected temperature.

検知用感温素子３１と固定抵抗素子３３との接続点には出力端子３６が接続され、補償用感温素子３２と固定抵抗素子３４との接続点には出力端子３７が接続されている。検知用感温素子３１及び補償用感温素子３２の抵抗温度特性を略同一に調整し、固定抵抗素子３３，３４の抵抗値を略同一に調整すると、熱源からの赤外線が温度センサ１０に照射されない状態では、出力端子３６，３７の間の電圧はゼロとなる一方、熱源からの赤外線が温度センサ１０に照射される状態では、検知用感温素子３１及び補償用感温素子３２のそれぞれの抵抗値変化の相違により、出力端子電極３６，３７の間に不平衡電圧が出力される。この不平衡電圧と熱源の温度とを対応付けたマップデータを参照することにより、不平衡電圧から熱源の温度を推定することができる。   An output terminal 36 is connected to a connection point between the sensing temperature sensing element 31 and the fixed resistance element 33, and an output terminal 37 is connected to a connection point between the compensation temperature sensing element 32 and the fixed resistance element 34. When the resistance temperature characteristics of the detection temperature sensing element 31 and the compensation temperature sensing element 32 are adjusted to be substantially the same, and the resistance values of the fixed resistance elements 33 and 34 are adjusted to be substantially the same, the infrared rays from the heat source are applied to the temperature sensor 10. In a state in which the temperature sensor 10 is not operated, the voltage between the output terminals 36 and 37 is zero. On the other hand, in a state in which the temperature sensor 10 is irradiated with infrared rays from the heat source, the detection temperature sensing element 31 and the compensation temperature sensing element 32 respectively. Due to the difference in resistance value change, an unbalanced voltage is output between the output terminal electrodes 36 and 37. The temperature of the heat source can be estimated from the unbalanced voltage by referring to the map data that associates the unbalanced voltage with the temperature of the heat source.

次に、図２乃至図７を参照しながら温度センサ１０の構成について説明する。図２は温度センサ１０の全体斜視図、図３は温度センサ１０の分解斜視図、図４は温度センサ１０の断面図を示す。また、図５及び図６は、赤外線吸収膜２０の配線パターンを示す模式図であり、図７は図５及び図６の７−７線断面図である。図３に示すように、温度センサ１０は、熱源から輻射される赤外線を受光して発熱する赤外線受光膜２０を備える。赤外線吸収膜２０の材質は、熱源からの輻射赤外線を効率よく吸収して発熱する材質であればよく、例えば、遠赤外線と称される４μｍ〜１０μｍの波長帯域の光に吸収スペクトラムを有する材質が望ましい。このような材質として、フッ素、シリコーン、ポリエステル、ポリイミド、ポリエチレン、ポリカーボネート、又はポリフェニレンスルフィド等の高分子材料からなる樹脂が好ましい。図４に示すように、赤外線吸収膜２０は、熱源から輻射される赤外線を受光する第一の主面２１と、第一の主面２１の裏面である第二の主面２２とを有する。第一の主面２１には、補償用感温素子３２が取り付けられており、第二の主面２２には、検知用感温素子３１が取り付けられている。感温素子３１，３２は、上部筐体６０に形成された開口部６１の内部に配置される。   Next, the configuration of the temperature sensor 10 will be described with reference to FIGS. 2 is an overall perspective view of the temperature sensor 10, FIG. 3 is an exploded perspective view of the temperature sensor 10, and FIG. 4 is a cross-sectional view of the temperature sensor 10. 5 and 6 are schematic views showing a wiring pattern of the infrared absorbing film 20, and FIG. 7 is a sectional view taken along line 7-7 of FIGS. As shown in FIG. 3, the temperature sensor 10 includes an infrared light receiving film 20 that receives infrared rays radiated from a heat source and generates heat. The material of the infrared absorption film 20 may be any material that efficiently absorbs radiation infrared rays from a heat source and generates heat. For example, a material having an absorption spectrum for light in a wavelength band of 4 μm to 10 μm called far infrared rays. desirable. As such a material, a resin made of a polymer material such as fluorine, silicone, polyester, polyimide, polyethylene, polycarbonate, or polyphenylene sulfide is preferable. As shown in FIG. 4, the infrared absorption film 20 includes a first main surface 21 that receives infrared rays radiated from a heat source, and a second main surface 22 that is the back surface of the first main surface 21. A compensation temperature sensing element 32 is attached to the first principal surface 21, and a detection temperature sensing element 31 is attached to the second principal surface 22. The temperature sensitive elements 31 and 32 are arranged inside an opening 61 formed in the upper housing 60.

図３及び図４に示すように、アパーチャ７０は、開口部６１から導入される赤外線の有効受光範囲を制限するための開口部７１と、補償用感温素子３２を赤外線から遮蔽するための遮蔽部７２とを有する。検知用感温素子３1を第一の主面２１へ投影した領域が、開
口部７１を第一の主面２１へ投影した領域の略中心に位置するように開口部７１の形状及び検知用感温素子３１の取り付け位置を調整するのが好ましい。これにより、検知用感温素子３１は、赤外線吸収膜２０の有効受光範囲に分布する熱量を各方位から略均等に集熱することができる。補償用感温素子３２は、遮蔽部７２によって赤外線受光が遮られているため、赤外線からの熱量を受取ることはないが、開口部７１を通じて周囲雰囲気に接しているため、周囲雰囲気からの熱量を検出することができる。特に、開口部６１は、熱源と温度センサ１０との間で交わされる熱伝導の中心的役割を担うため、補償用感温素子３２を開口部６１の内部に配置することで、補償用感温素子３２は周囲雰囲気の温度変化に遅れることなく追従することができる。 As shown in FIGS. 3 and 4, the aperture 70 includes an opening 71 for limiting an effective infrared light receiving range introduced from the opening 61 and a shield for shielding the compensating temperature sensing element 32 from the infrared. Part 72. The shape of the opening 71 and the feeling of detection so that the region where the temperature sensing element 3 1 for detection is projected onto the first main surface 21 is positioned at the approximate center of the region where the opening 71 is projected onto the first main surface 21. It is preferable to adjust the mounting position of the temperature element 31. Thereby, the temperature sensing element 31 for detection can collect the heat amount distributed in the effective light receiving range of the infrared absorption film 20 from each direction substantially evenly. Since the temperature sensing element 32 for compensation does not receive the amount of heat from the infrared rays because the infrared ray reception is blocked by the shielding portion 72, it does not receive the amount of heat from the infrared rays, but is in contact with the surrounding atmosphere through the opening portion 71. Can be detected. In particular, since the opening 61 plays a central role in heat conduction between the heat source and the temperature sensor 10, the compensating temperature sensitive element 32 is disposed inside the opening 61, thereby compensating temperature sensing. The element 32 can follow the temperature change of the surrounding atmosphere without delay.

図３及び図４に示すように、赤外線吸収膜２０は、基体８０によって支持された上で下部筐体９０内部に収容される。基体８０には、赤外線吸収膜２０の第二の主面２２に形成されている複数の接続端子５１，５２，５３及び複数のリード配線４１，４２，４３，４４（図５参照）から基体８０が熱伝導的に分離されるための構造として、接続端子５１，５２，５３が形成されている領域に対応して基体８０の表裏を貫通する貫通孔８１と、リード配線４１，４２，４３，４４が形成されている領域に対応して下部筐体側に陥没する溝部８２とが形成されている。このような構造により、接続端子５１，５２，５３と基体８０との間、及びリード配線４１，４２，４３，４４と基体８０との間には空気が介在し、熱伝導が遮断される。このような熱伝導を遮断するための構造は、貫通孔８１及び溝部８２に限られるものではなく、例えば、基体８０と接続端子５１，５２，５３との間、又は基体８０とリード配線４１，４２，４３，４４との間に断熱部材を介挿してもよい。なお、基体８０は必ずしも必須ではなく、例えば、下部筐体９０又は上部筐体６０の何れか一方又は両者が基体８０の機能を兼ねてもよい。このような場合、上述の熱伝導を遮蔽するための構造は、下部筐体９０又は上部筐体６０の何れか一方又は両者が有していればよい。図５に示す接続端子５１，５２，５３は、図３に示す導線１０１，１０２，１０３にそれぞれ接続する。   As shown in FIGS. 3 and 4, the infrared absorption film 20 is supported by the base body 80 and then accommodated in the lower housing 90. The substrate 80 includes a plurality of connection terminals 51, 52, 53 and a plurality of lead wires 41, 42, 43, 44 (see FIG. 5) formed on the second main surface 22 of the infrared absorption film 20. As a structure for separating the heat conduction, the through hole 81 penetrating the front and back of the base 80 corresponding to the region where the connection terminals 51, 52, 53 are formed, and the lead wires 41, 42, 43, Corresponding to the region where 44 is formed, a groove portion 82 is formed which is depressed on the lower housing side. With such a structure, air is interposed between the connection terminals 51, 52, 53 and the base body 80, and between the lead wirings 41, 42, 43, 44 and the base body 80, and heat conduction is cut off. Such a structure for blocking heat conduction is not limited to the through hole 81 and the groove 82, and for example, between the base 80 and the connection terminals 51, 52, 53, or between the base 80 and the lead wiring 41, You may insert a heat insulation member between 42,43,44. Note that the base body 80 is not necessarily essential, and for example, one or both of the lower housing 90 and the upper housing 60 may also function as the base body 80. In such a case, any one or both of the lower housing 90 and the upper housing 60 may have the above-described structure for shielding heat conduction. Connection terminals 51, 52, and 53 shown in FIG. 5 are connected to the conductive wires 101, 102, and 103 shown in FIG. 3, respectively.

図５に示すように、リード配線４１，４２は、検知用感温素子３１の各電極から第二の主面２２上に引き出されて、それぞれ、接続端子５２，５３に接続する。図５及び図６に示すように、リード配線４３，４４は、補償用感温素子３２の各電極から引き出されて、第一の主面２１から第二の主面２２へ赤外線吸収膜２０を貫通し、それぞれ、接続端子５１，５２に接続する。リード配線４１，４２，４３，４４の熱伝導率（例えば、４００Ｗ／ｍＫ）は、赤外線吸収膜２０の熱伝導率（例えば、０．２〜０．４Ｗ／ｍＫ）よりも極めて高いため、感温素子３１，３２の温度変化に寄与する熱量の大部分は、赤外線吸収膜２０ではなく、リード配線４１，４２，４３，４４を伝わる。このため、リード配線４１，４２，４３，４４のそれぞれが仮に熱的に異なる条件下にあると、熱的条件の定常偏差によって二つの感温素子３１，３２を同一の熱的条件下におくことができなくなり、正確な温度補償が困難になる。このような事情に鑑み、本実施形態では複数のリード配線４１，４２，４３，４４は、相互に熱結合する程度に密集する密集部分４０を有する。密集部分４０は、複数のリード配線４１，４２，４３，４４に共通のサーマルグランド（１点アース）として機能し、複数のリード配線４１，４２，４３，４４の温度勾配はサーマルグランドで終端され、それぞれの熱的条件が均一化される。これにより、熱的条件の定常偏差がゼロに収束し、正確な温度補償を実現できる。なお、赤外線吸収膜２０の一端側に複数の接続端子５１，５２，５３を設けると、複数のリード配線４１，４２，４３，４４が束ね易くなり、密集部分４０を形成するのに都合がよい。密集部分４０は、検知用感温素子３１及び補償用感温素子３２から複数のリード配線４１，４２，４３，４４を直線的に引き出すことなく、より近接して束ねられた配線構造を有しており、接続端子５１，５２，５３の配列方向の全幅よりも内側に形成されている。また、補償用感温素子３２の配置箇所は、接続端子５１，５２，５３が形成されている側が好ましい。   As shown in FIG. 5, the lead wires 41 and 42 are drawn out from the respective electrodes of the detection temperature sensing element 31 onto the second main surface 22 and connected to the connection terminals 52 and 53, respectively. As shown in FIGS. 5 and 6, the lead wirings 43 and 44 are drawn from the respective electrodes of the compensating temperature sensitive element 32, and the infrared absorption film 20 is formed from the first main surface 21 to the second main surface 22. It penetrates and is connected to connection terminals 51 and 52, respectively. The thermal conductivity (for example, 400 W / mK) of the lead wires 41, 42, 43, and 44 is extremely higher than the thermal conductivity of the infrared absorption film 20 (for example, 0.2 to 0.4 W / mK). Most of the heat amount contributing to the temperature change of the temperature elements 31 and 32 is transmitted not to the infrared absorption film 20 but to the lead wirings 41, 42, 43, and 44. For this reason, if each of the lead wires 41, 42, 43, and 44 is under a thermally different condition, the two temperature sensitive elements 31 and 32 are placed under the same thermal condition due to a steady deviation of the thermal condition. And accurate temperature compensation becomes difficult. In view of such circumstances, in the present embodiment, the plurality of lead wires 41, 42, 43, 44 have a dense portion 40 that is dense enough to be thermally coupled to each other. The dense portion 40 functions as a thermal ground (single point ground) common to the plurality of lead wires 41, 42, 43, and 44, and the temperature gradient of the plurality of lead wires 41, 42, 43, and 44 is terminated by the thermal ground. Each thermal condition is made uniform. Thereby, the steady-state deviation of the thermal condition converges to zero, and accurate temperature compensation can be realized. If a plurality of connection terminals 51, 52, 53 are provided on one end side of the infrared absorption film 20, the plurality of lead wires 41, 42, 43, 44 are easily bundled, which is convenient for forming the dense portion 40. . The dense portion 40 has a wiring structure in which a plurality of lead wires 41, 42, 43, 44 are bundled closer to each other without being linearly drawn from the sensing temperature sensing element 31 and the compensation temperature sensing element 32. The connection terminals 51, 52, 53 are formed inside the entire width in the arrangement direction. Further, it is preferable that the compensation temperature sensitive element 32 is disposed on the side where the connection terminals 51, 52, 53 are formed.

複数のリード配線４１，４２，４３，４４のそれぞれの熱的条件をより均一化するためには、例えば、図６に示すように、複数のリード配線４１，４２，４３，４４のそれぞれに熱結合する伝熱性薄膜５０を第一の主面２１に形成するのが好ましい。伝熱性薄膜５０は、熱伝導的なグランドパターンとして機能する。図７に示すように、赤外線吸収膜２０の膜厚を薄くし（例えば、２０〜３０μｍ程度）、伝熱性薄膜５０及びリード配線４１，４２，４３，４４を赤外線吸収膜２０に密着させることにより、良好な熱結合を得ることができる。伝熱性薄膜５０の面積を、密集部分４０の面積よりも大きくし、密集部分４０を第一の主面２１に投影した領域が伝熱性薄膜５０の領域に含まれるように設計すると、更に良好な熱結合を得ることができる。また、図６に示すように、伝熱性薄膜５０は、複数の接続端子５１，５２，５３の裏側にまで及ぶように形成するのが好ましい。接続端子５１，５２，５３の端子幅は、リード配線４１，４２，４３，４４の配線幅より太いため、接続端子５１，５２，５３が伝熱性薄膜５０に対向する面積が大きくなり、伝熱性薄膜５０を流れる熱流路の断面積が増大する。これにより、サーマルグランドの熱抵抗が下がり、安定化する。また、リード配線４１，４２，４３の配線幅は必ずしも一定である必要はなく、例えば、伝熱性薄膜５０の裏側を通るリード配線４１，４２，４３の配線幅は、伝熱性薄膜５０の裏側以外を通るリード配線４１，４２，４３の配線幅よりも太い方が好ましい。これにより、リード配線４１，４２，４３が伝熱性薄膜５０に対向する面積が大きくなり、伝熱性薄膜５０を流れる熱流路の断面積が増大し、サーマルグランドが安定化する。   In order to make the thermal conditions of the plurality of lead wires 41, 42, 43, 44 more uniform, for example, as shown in FIG. 6, heat is applied to each of the plurality of lead wires 41, 42, 43, 44. The heat transfer thin film 50 to be bonded is preferably formed on the first main surface 21. The heat conductive thin film 50 functions as a heat conductive ground pattern. As shown in FIG. 7, the infrared absorbing film 20 is made thin (for example, about 20 to 30 μm), and the heat conductive thin film 50 and the lead wirings 41, 42, 43, 44 are brought into close contact with the infrared absorbing film 20. Good thermal bonding can be obtained. If the area of the heat transfer thin film 50 is made larger than the area of the dense portion 40 and the area where the dense portion 40 is projected onto the first main surface 21 is designed to be included in the area of the heat transfer thin film 50, it is even better. Thermal bonding can be obtained. Moreover, as shown in FIG. 6, it is preferable to form the heat conductive thin film 50 so that it may reach the back side of the some connection terminal 51,52,53. Since the terminal widths of the connection terminals 51, 52, and 53 are larger than the wiring widths of the lead wirings 41, 42, 43, and 44, the area where the connection terminals 51, 52, and 53 are opposed to the heat transfer thin film 50 is increased. The cross-sectional area of the heat flow path flowing through the thin film 50 increases. Thereby, the thermal resistance of the thermal ground is lowered and stabilized. Further, the wiring width of the lead wirings 41, 42, 43 is not necessarily constant. For example, the wiring width of the lead wirings 41, 42, 43 passing through the back side of the heat conductive thin film 50 is other than the back side of the heat conductive thin film 50. It is preferable that the lead wire 41, 42, 43 passing through the wire is wider than the wire width. As a result, the area where the lead wirings 41, 42, 43 are opposed to the heat transfer thin film 50 is increased, the cross-sectional area of the heat flow path flowing through the heat transfer thin film 50 is increased, and the thermal ground is stabilized.

また、例えばリード配線４１，４４を電気回路のグランドに接続する等の目的で両者を接続する場合には、リード配線４１，４４の接続部分４５が密集部分４０の中に位置するように設けるのが好ましい。つまり、リード配線４１，４４は、密集部分４０でのみ接続するのが好ましい。これにより、リード配線４１，４４は、接続部分４５において熱的に１点アースされるため、リード配線４１，４２，４３，４４の熱的条件を均一化する上で効果的である。仮に、接続部分４５が密集部分４０の外側に設けられていると、接続部分４５を起点として熱伝導が行われ、それぞれのリード配線４１，４２，４３，４４の熱的条件がばらついてしまうので、好ましくない。また、上述したように、基体８０は、複数の接続端子５１，５２，５３及び複数のリード配線４１，４２，４３，４４から熱伝導的に分離されているため、基体８０からリード配線４１，４２，４３，４４又は接続端子５１，５２，５３への熱の流出入は遮断され、リード配線４１，４２，４３，４４の熱的条件のばらつきが抑制される。   For example, when connecting the lead wires 41 and 44 for the purpose of connecting to the ground of the electric circuit, the connection portions 45 of the lead wires 41 and 44 are provided so as to be located in the dense portion 40. Is preferred. That is, the lead wires 41 and 44 are preferably connected only at the dense portion 40. As a result, the lead wires 41 and 44 are thermally grounded at one point in the connection portion 45, which is effective in making the thermal conditions of the lead wires 41, 42, 43, and 44 uniform. If the connection portion 45 is provided outside the dense portion 40, heat conduction is performed starting from the connection portion 45, and the thermal conditions of the respective lead wires 41, 42, 43, 44 vary. It is not preferable. Further, as described above, the base body 80 is thermally conductively separated from the plurality of connection terminals 51, 52, 53 and the plurality of lead wirings 41, 42, 43, 44. Inflow and outflow of heat to 42, 43, 44 or the connection terminals 51, 52, 53 are blocked, and variations in the thermal conditions of the lead wires 41, 42, 43, 44 are suppressed.

なお、図５に示すように、検知用感温素子３１は、集熱部材３８を備えてもよい。集熱部材３８は、赤外線吸収膜２０の各所に分布している熱量を捕捉し、これを検知用感温素子３１に集熱させるための部材である。集熱部材３８は、検知用感温素子３１近傍の領域だけでなく検知用感温素子３１から離れた領域からも広範囲にわたって熱量を捕捉し、検知用感温素子３１に効率良く集熱できるように、検知用感温素子３１の電極を起点として赤外線吸収膜２０の面内に放射状に形成されている。集熱部材３８は、電気信号の伝送に係わる部材ではなく、熱伝導のみに係わる部材であるため、外部の部品に接続することなく、赤外線吸収膜２０の面内で終端している。このため、集熱部材３８から外部に熱が流出することはなく、集熱部材３８の終端から感温素子３１へ向かって一方向に熱が流れる。集熱部材３８は、赤外線吸収膜２０の各所に蓄熱している熱量を万遍なく捕捉するために、赤外線吸収膜２０の外周端部に向かって枝分かれを繰り返しながら放射状に形成されているのが好ましい。このような構成により、赤外線吸収膜２０に分布する熱量は、集熱部材３８の枝と枝との間に島状に点在し、赤外線吸収膜２０と感温素子３１との間の温度勾配により、感温素子３１へ向けて熱の流れを生じさせることができる。また、集熱部材３８を放射状に形成することで、熱を捕捉できる集熱範囲を赤外線吸収膜２０全体に拡大することが可能になり、集熱効率を高めることができる。また、集熱部材３８と感温素子３１との接続部分から赤外線吸収膜２０の各点へ至る伝熱経路を短くできるため、赤外線吸収膜２０に分布する熱量を低熱抵抗の伝熱経路を通じて感温素子３１へ素早く集熱することができる。これにより、感温素子３１は、熱源の温度変化に対して応答性よく反応することができる。   As shown in FIG. 5, the temperature sensing element 31 for detection may include a heat collecting member 38. The heat collecting member 38 is a member that captures the amount of heat distributed in various places of the infrared absorption film 20 and collects the heat in the temperature sensing element 31 for detection. The heat collecting member 38 captures heat over a wide range not only from the region in the vicinity of the detection temperature sensing element 31 but also from the region away from the detection temperature sensing element 31, so that the heat sensing element 31 can efficiently collect heat. Further, it is formed radially in the plane of the infrared absorption film 20 starting from the electrode of the temperature sensing element 31 for detection. The heat collecting member 38 is not a member relating to the transmission of electric signals but a member relating only to heat conduction, and therefore terminates in the plane of the infrared absorption film 20 without being connected to external components. For this reason, heat does not flow out from the heat collecting member 38, and heat flows in one direction from the end of the heat collecting member 38 toward the temperature sensing element 31. The heat collecting member 38 is formed in a radial pattern while repeating branching toward the outer peripheral end of the infrared absorbing film 20 in order to uniformly capture the amount of heat stored in various places of the infrared absorbing film 20. preferable. With such a configuration, the amount of heat distributed in the infrared absorption film 20 is scattered in an island shape between the branches of the heat collecting member 38, and the temperature gradient between the infrared absorption film 20 and the temperature sensing element 31. Thus, a heat flow can be generated toward the temperature sensing element 31. In addition, by forming the heat collecting member 38 radially, the heat collecting range in which heat can be captured can be expanded to the entire infrared absorption film 20, and the heat collecting efficiency can be increased. In addition, since the heat transfer path from the connecting portion between the heat collecting member 38 and the temperature sensing element 31 to each point of the infrared absorption film 20 can be shortened, the amount of heat distributed in the infrared absorption film 20 can be sensed through the heat transfer path with low thermal resistance. Heat can be quickly collected to the temperature element 31. Thereby, the temperature sensing element 31 can react with high responsiveness to the temperature change of the heat source.

集熱部材３８を流れる熱量は、感温素子３１に近づく程、多くなるので、感温素子３１に近づく程、集熱部材３８を太くして熱抵抗を下げるのが好ましい。これにより、集熱部材３８は、終端に近づく程、細くなり、熱抵抗が高くなるので、終端方向への熱の流れを抑制し、感温素子３１への熱の流れを促進させることができる。また、赤外線吸収膜２０の各点に分布する熱量が少ない場合であっても、低抵抗の集熱部材３８を介して熱が集められ、感温素子３１へ流れ込むため、感温素子３１の温度低下を抑制し、感度特性を高めることができる。   Since the amount of heat flowing through the heat collecting member 38 increases as it approaches the temperature sensing element 31, it is preferable to make the heat collecting member 38 thicker and lower the thermal resistance as it approaches the temperature sensing element 31. Thereby, the heat collecting member 38 becomes thinner as it approaches the end, and the thermal resistance becomes higher. Therefore, the heat flow toward the end can be suppressed, and the heat flow to the temperature sensing element 31 can be promoted. . Further, even when the amount of heat distributed to each point of the infrared absorption film 20 is small, heat is collected through the low-resistance heat collecting member 38 and flows into the temperature sensing element 31, so that the temperature of the temperature sensing element 31 is increased. Decrease can be suppressed and sensitivity characteristics can be enhanced.

熱源からの赤外線が赤外線吸収膜２０に輻射され始めた時点では、感温素子３１と赤外線吸収膜２０との間の温度差は大きく、両者の温度勾配によって集熱部材３８から感温素子３１へ熱が流入する。すると、感温素子３１の温度上昇に伴い、温度勾配は小さくなるので、感温素子３１への熱流入は少なくなる。一方、感温素子３１に集熱された熱量の一部は、リード配線４１，４２や周囲雰囲気を伝わって放熱され、感温素子３１の温度低下が生じるため、温度勾配によって感温素子３１への熱流入が持続する。そして、感温素子３１へ流れ込む熱量と感温素子３１から流れ出す熱量とが釣り合ったところで、熱平衡状態になり、感温素子３１の温度は一定になる。なお、本実施形態において、集熱部材３８は必須ではなく、省略してもよい。   At the time when the infrared rays from the heat source start to be radiated to the infrared absorption film 20, the temperature difference between the temperature sensing element 31 and the infrared absorption film 20 is large, and the temperature gradient from both to the temperature sensing element 31 from the heat collecting member 38. Heat flows in. Then, as the temperature of the temperature sensing element 31 rises, the temperature gradient becomes smaller, so that the heat inflow to the temperature sensing element 31 decreases. On the other hand, a part of the heat collected by the temperature sensing element 31 is radiated through the lead wires 41 and 42 and the surrounding atmosphere, and the temperature of the temperature sensing element 31 is lowered. The heat inflow continues. Then, when the amount of heat flowing into the temperature sensing element 31 and the amount of heat flowing out of the temperature sensing element 31 are balanced, a thermal equilibrium state is established, and the temperature of the temperature sensing element 31 becomes constant. In the present embodiment, the heat collecting member 38 is not essential and may be omitted.

本発明に係わる温度センサは、熱源の温度を非接触測定する用途に利用できる。   The temperature sensor according to the present invention can be used for non-contact measurement of the temperature of the heat source.

１０…温度センサ
２０…赤外線吸収膜
３１…検知用感温素子
３２…補償用感温素子
４０…密集部
４１，４２，４３，４４…リード配線
４５…接続部分
５０…伝熱性薄膜
５１，５２，５３…接続端子
６０…上部筐体
６１…開口部
７０…アパーチャ
８０…基体
９０…下部筐体 DESCRIPTION OF SYMBOLS 10 ... Temperature sensor 20 ... Infrared absorption film 31 ... Sensing temperature sensing element 32 ... Compensation temperature sensing element 40 ... Dense part 41, 42, 43, 44 ... Lead wiring 45 ... Connection part 50 ... Heat-conducting thin film 51, 52, 53 ... Connection terminal 60 ... Upper housing 61 ... Opening 70 ... Aperture 80 ... Base 90 ... Lower housing

Claims (2)

熱源から入射する赤外線を吸収する赤外線吸収膜と、
前記赤外線吸収膜上の赤外線入射領域に配置され、前記熱源の温度に対応した電気信号を出力する検知用感温素子と、
赤外線が遮蔽された領域に配置され、前記検知用感温素子にブリッジ接続する補償用感温素子と、
前記熱源から輻射される赤外線を前記赤外線吸収膜に導入するための開口部を有する筐体と、
前記筐体の開口部内にあって前記赤外線の有効受光範囲を制限するための開口部及び前記補償用感温素子を前記赤外線から遮蔽するための遮蔽部とを有するアパーチャと、を備え、
前記開口部を有する筐体は、前記熱源から輻射された赤外線が前記赤外線吸収膜に直接入射させる構造であり、
前記アパーチャは、前記赤外線吸収膜に近接して設置されており、
前記補償用感温素子は、前記筐体の開口部の内部に配置されている温度センサ。
An infrared absorbing film that absorbs infrared rays incident from a heat source;
A temperature sensing element for detection that is disposed in an infrared incident region on the infrared absorbing film and outputs an electrical signal corresponding to the temperature of the heat source;
A temperature sensor for compensation disposed in a region where infrared rays are shielded and bridge-connected to the temperature sensor for detection; and
A housing having an opening for introducing infrared rays radiated from the heat source into the infrared absorbing film;
An aperture having an opening in the opening of the housing for limiting the effective light receiving range of the infrared ray and a shielding portion for shielding the compensating temperature sensitive element from the infrared ray, and
The casing having the opening is a structure in which infrared rays radiated from the heat source are directly incident on the infrared absorption film,
The aperture is installed in proximity to the infrared absorbing film,
The compensation temperature sensitive element is a temperature sensor disposed inside an opening of the casing.
請求項１に記載の温度センサであって、
前記補償用感温素子は周囲雰囲気に接している、温度センサ。
The temperature sensor according to claim 1,
The temperature sensor for compensation is a temperature sensor in contact with an ambient atmosphere.
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