JP5046198B2 - Temperature sensor - Google Patents

Temperature sensor Download PDF

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JP5046198B2
JP5046198B2 JP2010105358A JP2010105358A JP5046198B2 JP 5046198 B2 JP5046198 B2 JP 5046198B2 JP 2010105358 A JP2010105358 A JP 2010105358A JP 2010105358 A JP2010105358 A JP 2010105358A JP 5046198 B2 JP5046198 B2 JP 5046198B2
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heat
temperature
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heat collection
infrared absorption
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健太郎 潮田
裕 松尾
浩 小林
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TDK Corp
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Description

本発明は熱源の温度を非接触測定する温度センサに関する。   The present invention relates to a temperature sensor for non-contact measurement of the temperature of a heat source.

特開2003−194630号公報には、熱源から輻射される赤外線の熱量を検出することにより、熱源の温度を非接触測定する温度センサが開示されている。この種の温度センサは、熱源からの赤外線を効率よく吸収する赤外線吸収膜を備えており、赤外線受光に起因する赤外線吸収膜の温度上昇を感温素子で検知する。感温素子は、温度に対応して電気的特性が変化する温度特性を有しており、感温素子から出力される電気信号に基づいて熱源の温度を推定することができる。このような感温素子として、抵抗温度特性を有するサーミスタ、サーモパイル、金属測温度体等が知られている。また、赤外線吸収膜として、遠赤外線の波長帯域を吸収する特性を有するポリイミド等の高分子フィルムが知られている。   Japanese Patent Laid-Open No. 2003-194630 discloses a temperature sensor that measures the temperature of a heat source in a non-contact manner by detecting the amount of heat of infrared rays radiated from the heat source. This type of temperature sensor includes an infrared absorption film that efficiently absorbs infrared rays from a heat source, and a temperature-sensitive element detects an increase in temperature of the infrared absorption film due to infrared reception. The temperature sensing element has a temperature characteristic in which an electrical characteristic changes corresponding to the temperature, and the temperature of the heat source can be estimated based on an electric signal output from the temperature sensing element. As such a temperature sensitive element, a thermistor, a thermopile, a metal temperature measuring element, etc. having resistance temperature characteristics are known. Further, as an infrared absorbing film, a polymer film such as polyimide having a characteristic of absorbing a far-infrared wavelength band is known.

特開2003−194630号公報JP 2003-194630 A

しかし、高分子フィルム等の赤外線吸収膜は、熱抵抗が大きいので、赤外線吸収膜の面内に分布する熱量を感温素子に効率よく伝熱することができない。このため、感温素子に接する赤外線吸収膜の一部の領域に蓄熱された熱量しか感温素子の温度上昇に寄与しておらず、赤外線吸収膜の面内に広範囲に分布する熱量は、感温素子の温度上昇に殆ど寄与していなかった。   However, since an infrared absorbing film such as a polymer film has a large thermal resistance, the amount of heat distributed in the plane of the infrared absorbing film cannot be efficiently transferred to the temperature sensitive element. For this reason, only the amount of heat stored in a part of the infrared absorption film in contact with the temperature-sensitive element contributes to the temperature rise of the temperature-sensitive element, and the amount of heat distributed over a wide area in the plane of the infrared absorption film is It hardly contributed to the temperature rise of the temperature element.

更に、感温素子から電気信号を取り出すためのリードパターンの熱伝導率(400W/mK)は、赤外線吸収膜の熱伝導率(0.2〜0.4W/mK)よりも極めて高いため、赤外線吸収膜から感温素子に流れ込んだ熱量は、リードパターンを伝わって外部に流出してしまい、感温素子の温度低下をもたらす要因の一つとして指摘されている。   Furthermore, the thermal conductivity (400 W / mK) of the lead pattern for taking out an electrical signal from the temperature sensitive element is much higher than the thermal conductivity (0.2 to 0.4 W / mK) of the infrared absorption film. It has been pointed out that the amount of heat that has flowed from the absorption film into the temperature sensitive element flows to the outside through the lead pattern and is one of the factors that cause a temperature decrease of the temperature sensitive element.

また、赤外線吸収膜から感温素子へ至る伝熱経路の熱抵抗が非常に大きいため、熱源の温度が変化したときに、感温素子がその変化に敏感に追従することができず、応答特性低下の要因にもなっていた。このような理由により、従来の温度センサには、熱源の温度を正確かつ応答性よく測定する上で検討の余地が残されていた。   In addition, since the thermal resistance of the heat transfer path from the infrared absorption film to the temperature sensing element is very large, when the temperature of the heat source changes, the temperature sensing element cannot follow the change sensitively, and response characteristics It was also a factor of decline. For this reason, the conventional temperature sensor still has room for investigation in measuring the temperature of the heat source accurately and with good responsiveness.

そこで、本発明は、上述の問題点を解決し、熱源の温度を正確かつ応答性よく測定できる温度センサを提供することを課題とする。   Therefore, an object of the present invention is to provide a temperature sensor that solves the above-described problems and can accurately measure the temperature of the heat source with high responsiveness.

上記の課題を解決するため、本発明に係わる温度センサは、熱源から輻射される赤外線を吸収して発熱する赤外線吸収膜と、赤外線吸収膜の熱量を検知することにより熱源の温度に対応した電気信号を出力する感温素子と、赤外線吸収膜に分布する熱量を感温素子に集熱するための集熱パターンとを備える。感温素子は、電気信号を出力するためのリードパターンに接続する電極を更に備え、集熱パターンは、この電極を起点として赤外線吸収膜の面内に放射状に形成されている。リードパターンと集熱パターンとは、同一の成膜工程で形成される。赤外線吸収膜に分布する熱量は、集熱パターンを伝わって感温素子に速やかに伝熱するため、熱源の温度を正確かつ応答性よく測定することができる。また、集熱パターンの形状を放射状にすることで、赤外線吸収膜に分布する熱量をきめ細かく掻き集めることが可能になり、集熱効率を高めることができる。 In order to solve the above-described problems, a temperature sensor according to the present invention includes an infrared absorption film that generates heat by absorbing infrared rays radiated from a heat source, and an electric power corresponding to the temperature of the heat source by detecting the amount of heat of the infrared absorption film. A temperature-sensitive element that outputs a signal and a heat collection pattern for collecting the amount of heat distributed in the infrared absorption film to the temperature-sensitive element are provided. The temperature sensing element further includes an electrode connected to a lead pattern for outputting an electric signal, and the heat collecting pattern is formed radially in the plane of the infrared absorption film starting from this electrode. The lead pattern and the heat collection pattern are formed in the same film forming process. Since the amount of heat distributed in the infrared absorption film is transferred to the temperature sensitive element quickly through the heat collection pattern, the temperature of the heat source can be measured accurately and with good responsiveness. Further, by making the shape of the heat collection pattern radial, it becomes possible to finely scrape the amount of heat distributed in the infrared absorption film, and the heat collection efficiency can be increased.

本発明に係わる温度センサによれば、熱源の温度を正確かつ応答性よく測定することができる。   With the temperature sensor according to the present invention, the temperature of the heat source can be measured accurately and with good responsiveness.

実施例1に係わる温度センサの説明図である。3 is an explanatory diagram of a temperature sensor according to Embodiment 1. FIG. 実施例2に係わる温度センサの説明図である。It is explanatory drawing of the temperature sensor concerning Example 2. FIG. 実施例3に係わる温度センサの説明図である。It is explanatory drawing of the temperature sensor concerning Example 3. FIG. 実施例4に係わる温度センサの説明図である。FIG. 10 is an explanatory diagram of a temperature sensor according to a fourth embodiment. 実施例5に係わる温度センサの説明図である。10 is an explanatory diagram of a temperature sensor according to Embodiment 5. FIG. 実施例6に係わる温度センサの説明図である。10 is an explanatory diagram of a temperature sensor according to Embodiment 6. FIG. 実施例7に係わる温度センサの説明図である。10 is an explanatory diagram of a temperature sensor according to Embodiment 7. FIG.

以下、各図を参照しながら本発明に係わる実施例について説明する。同一の部材については同一の符号を付すものとし、重複する説明を省略する。なお、図面は、模式的なものであり、部材相互間の寸法の比率や部材の形状等は、本発明の効果が得られる範囲内で現実のセンサ構造とは異なっていてもよい。   Embodiments according to the present invention will be described below with reference to the drawings. The same members are denoted by the same reference numerals, and redundant description is omitted. The drawings are schematic, and the ratio of dimensions between members, the shape of the members, and the like may be different from the actual sensor structure within a range where the effects of the present invention can be obtained.

図1は実施例1に係わる温度センサ100の説明図である。温度センサ100は、熱源から輻射される赤外線を吸収して発熱する赤外線吸収膜20と、赤外線吸収膜20の熱量を検知することにより熱源の温度に対応した電気信号を出力する感温素子10と、感温素子10から電気信号を出力するためのリードパターン31,32と、赤外線吸収膜20に分布する熱量を感温素子10に集熱するための集熱パターン40とを備える。赤外線吸収膜20の材質は、熱源からの輻射赤外線を吸収して発熱する材質であればよく、例えば、遠赤外線と称される4μm〜10μmの波長帯域の光に吸収スペクトラムを有する材質が望ましい。このような材質として、フッ素、シリコーン、ポリエステル、ポリイミド、ポリエチレン、ポリカーボネート、PPS(ポリフェニレンスルフィド)等の高分子材料からなる樹脂が好ましい。感温素子10は、温度に応じて電気的特性が変化するセンサ素子であればよく、特に限定されるものではないが、例えば、抵抗温度特性を有するサーミスタ、サーモパイル、金属測温度体などが好適である。感温素子10は、リードドパターン31,32にそれぞれ接続する電極11,12を備えており、感温素子10の温度変化に対応する電気特性の変化は、熱源の温度に対応する電気信号としてリードパターン31,32から外部に取り出される。感温素子10が例えば抵抗温度特性を有するサーミスタである場合には、感温素子10の温度変化は、抵抗値変化として現れる。感温素子10に予め所定の電流を流しておくことにより、感温素子10の抵抗値変化は、電圧変化として検出される。感温素子10の出力電圧は、熱源の温度に対応する電気信号として信号処理される。   FIG. 1 is an explanatory diagram of a temperature sensor 100 according to the first embodiment. The temperature sensor 100 absorbs infrared rays radiated from the heat source and generates heat, and the temperature sensing element 10 outputs an electric signal corresponding to the temperature of the heat source by detecting the amount of heat of the infrared absorption film 20. The lead patterns 31 and 32 for outputting an electrical signal from the temperature sensing element 10 and the heat collection pattern 40 for collecting the amount of heat distributed in the infrared absorption film 20 to the temperature sensing element 10 are provided. The material of the infrared absorption film 20 may be any material that generates heat by absorbing radiant infrared rays from a heat source. For example, a material having an absorption spectrum for light in a wavelength band of 4 μm to 10 μm called far infrared rays is desirable. As such a material, a resin made of a polymer material such as fluorine, silicone, polyester, polyimide, polyethylene, polycarbonate, PPS (polyphenylene sulfide) is preferable. The temperature sensing element 10 is not particularly limited as long as it is a sensor element whose electrical characteristics change according to temperature. For example, a thermistor, a thermopile, a metal thermometer having a resistance temperature characteristic, and the like are preferable. It is. The temperature sensing element 10 includes electrodes 11 and 12 connected to the lead patterns 31 and 32, respectively. The change in electrical characteristics corresponding to the temperature change of the temperature sensing element 10 is an electrical signal corresponding to the temperature of the heat source. The lead patterns 31 and 32 are taken out to the outside. When the temperature sensing element 10 is a thermistor having resistance temperature characteristics, for example, the temperature change of the temperature sensing element 10 appears as a resistance value change. By causing a predetermined current to flow through the temperature sensing element 10 in advance, a change in resistance value of the temperature sensing element 10 is detected as a voltage change. The output voltage of the temperature sensing element 10 is signal-processed as an electrical signal corresponding to the temperature of the heat source.

集熱パターン40は、赤外線吸収膜20の各所に分布している熱量を捕捉し、これを感温素子10に集熱させるための集熱部材である。集熱パターン40は、感温素子10近傍の領域だけでなく感温素子10から離れた領域からも広範囲にわたって熱量を捕捉し、感温素子10に効率良く集熱できるように、電極11,12を起点として赤外線吸収膜20の面内に放射状に形成されている。集熱パターン40は、電気信号の伝送に係わる部材ではなく、熱伝導のみに係わる部材であるため、外部の部品に接続することなく、赤外線吸収膜20の面内で終端している。このため、集熱パターン40から外部に熱が流出することはなく、集熱パターン40の終端から感温素子10へ向かって一方向に熱が流れる。集熱パターン40は、赤外線吸収膜20の各所に蓄熱している熱量を万遍なく捕捉するために、電極11,12を起点として赤外線吸収膜20の外周端部に向かって枝分かれを繰り返しながら放射状に形成されているのが好ましい。このような構成により、赤外線吸収膜20に分布する熱量は、集熱パターン40の枝と枝との間に島状に点在し、赤外線吸収膜20と感温素子10との間の温度勾配により、感温素子10へ向けて熱の流れを生じさせることができる。また、集熱パターン40を放射状に形成することで、熱を捕捉できる集熱範囲50を赤外線吸収膜20全体に拡大することが可能になり、集熱効率を高めることができる。また、集熱パターン40の根元部分(集熱パターン40と電極11,12との接続部分)から赤外線吸収膜20の各点へ至る伝熱経路を短くできるため、赤外線吸収膜20に分布する熱量を低熱抵抗の伝熱経路を通じて感温素子10へ素早く集熱することができる。これにより、感温素子10は、熱源の温度変化に対して応答性よく反応することができる。   The heat collection pattern 40 is a heat collection member for capturing the amount of heat distributed in various places of the infrared absorption film 20 and collecting the heat in the temperature sensing element 10. The heat collection pattern 40 captures heat over a wide range not only from the region in the vicinity of the temperature sensing element 10 but also from the region away from the temperature sensing element 10, so that the electrodes 11, 12 can collect heat efficiently. Are formed radially in the plane of the infrared absorption film 20. The heat collection pattern 40 is not a member related to transmission of an electric signal but a member related only to heat conduction, and thus terminates in the plane of the infrared absorption film 20 without being connected to an external component. For this reason, heat does not flow out from the heat collection pattern 40, and heat flows in one direction from the end of the heat collection pattern 40 toward the temperature sensing element 10. The heat collection pattern 40 is a radial pattern that repeats branching from the electrodes 11 and 12 toward the outer peripheral edge of the infrared absorption film 20 in order to uniformly capture the amount of heat stored in various places of the infrared absorption film 20. It is preferable that it is formed. With such a configuration, the amount of heat distributed in the infrared absorption film 20 is scattered in an island shape between the branches of the heat collection pattern 40, and the temperature gradient between the infrared absorption film 20 and the temperature sensing element 10. Thus, a heat flow can be generated toward the temperature sensing element 10. Moreover, by forming the heat collection pattern 40 radially, the heat collection range 50 in which heat can be captured can be expanded to the entire infrared absorption film 20, and the heat collection efficiency can be increased. Further, since the heat transfer path from the root portion of the heat collection pattern 40 (connection portion between the heat collection pattern 40 and the electrodes 11 and 12) to each point of the infrared absorption film 20 can be shortened, the amount of heat distributed in the infrared absorption film 20 Can be quickly collected on the temperature sensing element 10 through a heat transfer path having a low thermal resistance. Thereby, the temperature sensing element 10 can react with high responsiveness to the temperature change of the heat source.

集熱パターン40を流れる熱量は、感温素子10に近づく程、多くなるので、感温素子10に近づく程、集熱パターン40を太くして熱抵抗を下げるのが好ましい。これにより、集熱パターン40は、終端に近づく程、細くなり、熱抵抗が高くなるので、終端方向への熱の流れを抑制し、感温素子10への熱の流れを促進させることができる。また、赤外線吸収膜20の各点に分布する熱量が少ない場合であっても、低抵抗の集熱パターン40を介して熱が集められ、感温素子10へ流れ込むため、感温素子10の温度低下を抑制し、感度特性を高めることができる。   The amount of heat flowing through the heat collection pattern 40 increases as it approaches the temperature sensing element 10. Therefore, it is preferable to make the heat collection pattern 40 thicker and lower the thermal resistance as it approaches the temperature sensing element 10. Thereby, since the heat collection pattern 40 becomes thinner as the end is approached and the thermal resistance becomes higher, the heat flow toward the end can be suppressed and the heat flow to the temperature sensing element 10 can be promoted. . Further, even when the amount of heat distributed to each point of the infrared absorption film 20 is small, heat is collected through the low resistance heat collection pattern 40 and flows into the temperature sensing element 10, so that the temperature of the temperature sensing element 10 is increased. Decrease can be suppressed and sensitivity characteristics can be enhanced.

熱源からの赤外線が赤外線吸収膜20に輻射され始めた時点では、感温素子10と赤外線吸収膜20との間の温度差は大きく、両者の温度勾配によって集熱パターン40から感温素子10へ熱が流入する。すると、感温素子10の温度上昇に伴い、温度勾配は小さくなるので、感温素子10への熱流入は少なくなる。一方、感温素子10に集熱された熱量の一部は、リードパターン31,32や外界雰囲気を伝わって放熱され、感温素子10の温度低下が生じるため、温度勾配によって感温素子10への熱流入が持続する。そして、感温素子10へ流れ込む熱量と感温素子10から流れ出す熱量とが釣り合ったところで、熱平衡状態になり、感温素子10の温度は一定になる。なお、感温素子10に集熱された熱量の一部は、リードパターン31,32を伝わって外部に流出するため、赤外線吸収膜20の外周端部付近に配線されているリードパターン31,32の少なくとも一部を細くし、且つ蛇行させて熱抵抗を高め、外部への熱流出を抑制するのが好ましい。   At the time when the infrared rays from the heat source start to be radiated to the infrared absorption film 20, the temperature difference between the temperature sensing element 10 and the infrared absorption film 20 is large, and the temperature gradient from both the heat collection pattern 40 to the temperature sensing element 10. Heat flows in. Then, as the temperature of the temperature sensitive element 10 rises, the temperature gradient becomes smaller, so that the heat flow into the temperature sensitive element 10 decreases. On the other hand, part of the heat collected in the temperature sensing element 10 is dissipated through the lead patterns 31 and 32 and the ambient atmosphere, and the temperature of the temperature sensing element 10 is lowered. The heat inflow continues. Then, when the amount of heat flowing into the temperature sensing element 10 and the amount of heat flowing out of the temperature sensing element 10 are balanced, a thermal equilibrium state is established, and the temperature of the temperature sensing element 10 becomes constant. Note that part of the heat collected by the temperature sensing element 10 flows out to the outside through the lead patterns 31 and 32, so the lead patterns 31 and 32 wired near the outer peripheral end of the infrared absorption film 20. It is preferable to make at least a part of the thin film meander and meander to increase the thermal resistance and suppress the heat outflow to the outside.

集熱パターン40の材質は、赤外線吸収膜20の熱抵抗よりも小さい熱抵抗を有し、熱伝導性に優れている材質であればよい。例えば、集熱パターン40の材質は、リードパターン31,32の材質と同一でもよく、或いは異なるものでもよい。集熱パターン40の材質がリードパターン31,32の材質と同一である場合には、集熱パターン40とリードパターン31,32とを同一の成膜工程で形成できるという利点を有する。例えば、赤外線吸収膜20上に銅箔を形成し、公知の印刷技術を用いてこれを所定形状にパターニングすることで、導電性を有する集熱パターン40とリードパターン31,32とを一括形成することができる。集熱パターン40の材質がリードパターン31,32の材質と異なる場合には、集熱パターン40の材質として、例えば、金属以外の熱伝導率の高い材質(カーボングラファイト膜など)を用いてもよい。   The material of the heat collection pattern 40 should just be a material which has a thermal resistance smaller than the thermal resistance of the infrared rays absorption film 20, and is excellent in thermal conductivity. For example, the material of the heat collection pattern 40 may be the same as or different from the material of the lead patterns 31 and 32. When the material of the heat collection pattern 40 is the same as the material of the lead patterns 31 and 32, there is an advantage that the heat collection pattern 40 and the lead patterns 31 and 32 can be formed in the same film forming process. For example, a copper foil is formed on the infrared absorbing film 20 and patterned into a predetermined shape using a known printing technique, thereby forming the heat collecting pattern 40 and the lead patterns 31 and 32 having conductivity. be able to. When the material of the heat collection pattern 40 is different from the material of the lead patterns 31 and 32, for example, a material having a high thermal conductivity (such as a carbon graphite film) other than metal may be used as the material of the heat collection pattern 40. .

図2は実施例2に係わる温度センサ200の説明図である。同図に示すように、集熱パターン40は、電極11,12を起点として放射状に形成されている幹41がつづら折状に屈曲し、その屈曲点42から針状の先端43が枝分かれしている点で実施例1と相違し、その余の点で実施例1,2は共通のセンサ構造を有している。実施例2によれば、針状の先端43によって幹41の間の空間に集熱パターン40を張り巡らすことができるので、集熱範囲50からきめ細かく熱を掻き集めることができる。   FIG. 2 is an explanatory diagram of a temperature sensor 200 according to the second embodiment. As shown in the figure, in the heat collecting pattern 40, the stem 41 formed radially from the electrodes 11 and 12 is bent in a bent manner, and the needle-like tip 43 branches from the bent point 42. The first and second embodiments are different from the first embodiment in that the first and second embodiments have a common sensor structure. According to the second embodiment, since the heat collection pattern 40 can be stretched around the space between the trunks 41 by the needle-like tip 43, heat can be finely collected from the heat collection range 50.

図3は実施例3に係わる温度センサ300の説明図である。同図に示すように、集熱パターン40は、電極11,12を起点として放射状に形成されているものの、そのパターンは単純化されている点で実施例1と相違し、その余の点で実施例1,3は共通のセンサ構造を有している。実施例3によれば、簡易な製造プロセスで温度センサ300を作成することができる。   FIG. 3 is an explanatory diagram of a temperature sensor 300 according to the third embodiment. As shown in the figure, the heat collection pattern 40 is formed radially from the electrodes 11 and 12, but the pattern is simplified and is different from the first embodiment. Examples 1 and 3 have a common sensor structure. According to the third embodiment, the temperature sensor 300 can be created by a simple manufacturing process.

図4は実施例4に係わる温度センサ400の説明図である。同図に示すように、集熱パターン40は、電極11,12を起点として、枝分かれすることなく放射状に形成され、赤外線吸収膜20の外周端部付近及びリードパターン31,32の蛇行部分の間に入り込んでいる点で実施例1と相違し、その余の点で実施例1,4は共通のセンサ構造を有している。実施例4によれば、集熱パターン40の形状を簡略化しつつ、集熱効率を高めることができる。   FIG. 4 is an explanatory diagram of a temperature sensor 400 according to the fourth embodiment. As shown in the figure, the heat collection pattern 40 is formed radially without branching from the electrodes 11 and 12, and between the vicinity of the outer peripheral end of the infrared absorption film 20 and the meandering portions of the lead patterns 31 and 32. However, the first and fourth embodiments have a common sensor structure. According to the fourth embodiment, the heat collection efficiency can be improved while simplifying the shape of the heat collection pattern 40.

図5は実施例5に係わる温度センサ500の説明図である。同図に示すように、集熱パターン40は、電極11,12を起点として、枝分かれすることなく蛇行しながら放射状に形成されている点で実施例1と相違し、その余の点で実施例1,5は共通のセンサ構造を有している。実施例5によれば、集熱パターン40の形状を簡略化しつつ、集熱効率を高めることができる。   FIG. 5 is an explanatory diagram of a temperature sensor 500 according to the fifth embodiment. As shown in the figure, the heat collection pattern 40 is different from the first embodiment in that the heat collection pattern 40 is formed in a radial manner while meandering without branching from the electrodes 11 and 12. 1 and 5 have a common sensor structure. According to the fifth embodiment, the heat collection efficiency can be improved while simplifying the shape of the heat collection pattern 40.

図6は実施例6に係わる温度センサ600の説明図である。同図において、符号601は、赤外線吸収膜20上に存在し、且つ感温素子10の底部に密着する点を示している。実施例6に係わる集熱パターン40は、点601を起点として赤外線吸収膜20の面内に放射状に形成されている点で実施例1と相違し、その余の点で実施例1,6は共通のセンサ構造を有している。実施例6に係わる集熱パターン40は、点601を起点として放射状に形成されるものに加えて、電極11,12を起点として放射状に形成されるものを含んでもよく、或いは、点601を起点として放射状に形成されるもののみを含んでもよい。なお、点601を起点として放射状に形成される集熱パターン40は、感温素子10に電気的に接続せず、また、リードパターン31、32とも接続していない。このため、集熱パターン40が集熱した熱がリードパターン31,32を経由して外部に流出することを防ぐことが出来る。実施例6によれば、集熱範囲50に分布する熱量をきめ細かく掻き集めることができる。   FIG. 6 is an explanatory diagram of a temperature sensor 600 according to the sixth embodiment. In the figure, reference numeral 601 indicates a point that is present on the infrared absorption film 20 and is in close contact with the bottom of the temperature-sensitive element 10. The heat collection pattern 40 according to the sixth embodiment is different from the first embodiment in that the heat collection pattern 40 is formed radially in the plane of the infrared ray absorbing film 20 starting from the point 601, and in the other points, the first and sixth embodiments are different. It has a common sensor structure. The heat collection pattern 40 according to the sixth embodiment may include a pattern that is formed radially from the electrodes 11 and 12 in addition to a pattern that is formed radially from the point 601, or a point 601 as a starting point. Only those formed in a radial pattern may be included. The heat collection pattern 40 formed radially from the point 601 is not electrically connected to the temperature sensing element 10 and is not connected to the lead patterns 31 and 32. For this reason, the heat collected by the heat collection pattern 40 can be prevented from flowing out via the lead patterns 31 and 32. According to Example 6, the amount of heat distributed in the heat collection range 50 can be finely scraped.

図7は実施例7に係わる温度センサ700の説明図である。同図に示すように、温度センサ700は、複数の感温素子10,60を備えている。複数の感温素子10,60は、直列接続されており、両感温素子の接続点701を起点として赤外線吸収膜20の面内に集熱パターン40が放射状に形成されている。感温素子10に接続するリードパターン31と、感温素子60に接続するリードパターン32は、それぞれ、複数の感温素子10,60の接続方向に関して平行に直線状に形成されており、熱抵抗が小さくなるように構成されている。集熱パターン40とリードパタンーン31,32とは、金属箔としては接続していないため、集熱パターン40の集めた熱量がそのままリードパターン31,32を通じて外部に流出することを防ぐことができ、温度センサ700の感度特性が向上する。例えば、赤外線吸収膜20による赤外線吸収エネルギー量が増大するときには、感温素子10,60は、集熱パターン40が掻き集めた熱量を急速に蓄熱し、感度よく温度上昇する。一方、赤外線吸収膜20による赤外線吸収エネルギー量が減少するときには、感温素子10,60から熱抵抗の低いリードパターン31,32を伝わって外部に熱量が流出するため、感温素子10,60は、感度よく温度低下する。これにより、温度センサ700の立ち上がり応答特性及び立下り応答特性を共にバランスよく調整することができる。なお、同図では、二つの感温素子10,60を図示しているが、三つ以上の感温素子を直列に接続し、感温素子間の接続点を起点とする放射状の集熱パターン40を形成してもよい。   FIG. 7 is an explanatory diagram of a temperature sensor 700 according to the seventh embodiment. As shown in the figure, the temperature sensor 700 includes a plurality of temperature sensitive elements 10, 60. The plurality of temperature sensing elements 10 and 60 are connected in series, and the heat collection pattern 40 is radially formed on the surface of the infrared absorption film 20 with the connection point 701 of both temperature sensing elements as a starting point. The lead pattern 31 connected to the temperature sensing element 10 and the lead pattern 32 connected to the temperature sensing element 60 are each formed in a straight line in parallel with respect to the connection direction of the plurality of temperature sensing elements 10 and 60, and the thermal resistance. Is configured to be small. Since the heat collection pattern 40 and the lead patterns 31 and 32 are not connected as a metal foil, the amount of heat collected by the heat collection pattern 40 can be prevented from flowing out to the outside through the lead patterns 31 and 32 as a temperature. The sensitivity characteristic of the sensor 700 is improved. For example, when the amount of energy absorbed by the infrared absorption film 20 increases, the temperature sensing elements 10 and 60 rapidly store the amount of heat collected by the heat collection pattern 40, and the temperature rises with high sensitivity. On the other hand, when the amount of energy absorbed by the infrared absorbing film 20 decreases, the amount of heat flows from the temperature sensitive elements 10 and 60 through the lead patterns 31 and 32 having a low thermal resistance to the outside. The temperature drops with high sensitivity. Thereby, both the rising response characteristic and the falling response characteristic of the temperature sensor 700 can be adjusted with good balance. In addition, although the two temperature sensing elements 10 and 60 are illustrated in the figure, the radial heat collection pattern which connected the three or more temperature sensing elements in series and started from the connection point between temperature sensing elements is shown. 40 may be formed.

本発明に係わる温度センサは、熱源の温度を非接触測定する用途に応用できる。   The temperature sensor according to the present invention can be applied to an application for non-contact measurement of the temperature of a heat source.

10…感温素子
11,12…電極
20…赤外線吸収膜
31,32…リードパターン
40…集熱パターン
50…集熱範囲
100,200,300,400,500,600,700…温度センサ
DESCRIPTION OF SYMBOLS 10 ... Temperature sensing element 11, 12 ... Electrode 20 ... Infrared absorption film 31, 32 ... Lead pattern 40 ... Heat collection pattern 50 ... Heat collection range 100, 200, 300, 400, 500, 600, 700 ... Temperature sensor

Claims (1)

熱源から輻射される赤外線を吸収して発熱する赤外線吸収膜と、
前記赤外線吸収膜の熱量を検知することにより前記熱源の温度に対応した電気信号を出力する感温素子と、
前記赤外線吸収膜に分布する熱量を前記感温素子に集熱するための集熱パターンと、
を備え
前記感温素子は、前記電気信号を出力するためのリードパターンに接続する電極を更に備え、
前記集熱パターンは、前記電極を起点として前記赤外線吸収膜の面内に放射状に形成されており、
前記リードパターンと前記集熱パターンとは、同一の成膜工程で形成される、温度センサ。
An infrared absorbing film that absorbs infrared rays radiated from a heat source and generates heat;
A temperature sensitive element that outputs an electrical signal corresponding to the temperature of the heat source by detecting the amount of heat of the infrared absorption film; and
A heat collection pattern for collecting heat in the infrared absorption film on the thermosensitive element; and
Equipped with a,
The temperature sensing element further includes an electrode connected to a lead pattern for outputting the electrical signal,
The heat collection pattern is formed radially in the plane of the infrared absorption film starting from the electrode,
The lead pattern and the heat collection pattern are temperature sensors formed in the same film forming process .
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