JP2015045087A - Sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering device having a small in-plane dispersion of a film formed on a substrate.SOLUTION: A sputtering device comprises: an electrode 310 having a holding part 311 for holding a target 50 for applying a potential to the target 50 through the holding part 311; a first magnet 331 and a second magnet 332 arranged to interpose a space SP between a substrate arrangement surface SS to be arranged with a substrate and the holding part 311, and spaced from each other in a direction along the substrate arrangement surface SS; a shield 340 arranged at a position between the first magnet 331 and the second magnet 332 and between the substrate arrangement surface SS and the holding part 311; and a rotary drive part 430 for rotating the target 50, the first magnet 331 and the second magnet 332 integrally.

Description

  The present invention relates to a sputtering apparatus.

  Patent Document 1 describes a box-type counter-target type sputtering apparatus including a pair of targets arranged so as to face each other so as to sandwich a space where one surface of a substrate to be processed faces. A permanent magnet is disposed on the back side of each target, and a cooling jacket is disposed between the target and the permanent magnet. Each target is assembled together with a portion constituting a cooling jacket, a permanent magnet, and the like to constitute a target portion. Each target part is fixed to a frame, respectively.

JP 2005-48227 A

  In the box-type counter target sputtering apparatus described in Patent Document 1, since the pair of targets are fixedly arranged, the film formed on the substrate tends to be non-uniform. In addition, in the box type opposing target type sputtering apparatus described in Patent Document 1, it is necessary to attach each of the pair of target portions to the frame. Moreover, each target portion is large because it includes a portion constituting a cooling jacket, a permanent magnet, and the like in addition to the target. Therefore, it is considered that the box type opposed target sputtering apparatus described in Patent Document 1 requires a considerable amount of time for maintenance such as target replacement. Further, in the configuration in which the cooling jacket is arranged between the permanent magnet and the target, the magnetic field generated by the permanent magnet is attenuated by the refrigerant in the cooling jacket, etc., so that it is necessary to enlarge the permanent magnet.

  An object of the present invention is to provide a sputtering apparatus in which in-plane variation of a film formed on a substrate is small.

  One aspect of the present invention relates to a sputtering apparatus that forms a film on a substrate by sputtering in a chamber, and the sputtering apparatus includes a holding unit that holds a target, and a potential is applied to the target via the holding unit. A first magnet and a first magnet disposed so as to sandwich a space between the electrode to be provided, a substrate placement surface on which the substrate is to be placed, and the holding unit, and in a direction along the substrate placement surface; Two magnets, a shield disposed between the first magnet and the second magnet and between the substrate placement surface and the holding portion, the target, the first magnet, and the second magnet. And a rotation driving unit that rotates integrally.

  According to the present invention, a sputtering apparatus in which in-plane variation of a film formed on a substrate is small is provided.

The top view which shows roughly the structure of the processing system of one Embodiment of this invention. The figure which shows the structure of the film-forming apparatus. The figure which shows the structure of the film-forming apparatus. The figure which shows the structure of the film-forming apparatus. The figure which shows one structural example of a target. The figure which shows the other structural example of a target.

  Hereinafter, the present invention will be described through exemplary embodiments thereof with reference to the accompanying drawings.

  FIG. 1 is a plan view schematically showing the configuration of a processing system 100 according to one embodiment of the present invention. The processing system 100 is configured as an inline processing apparatus. The in-line method refers to a method of processing a substrate while transporting the substrate through a plurality of connected chambers. In the film forming apparatus 200 shown in FIG. 1, a plurality of chambers 111 to 130 are connected endlessly so as to form a rectangular layout. Each of the chambers 111 to 130 is provided with a transport device that transports the substrate 1 held by the carrier 10. The adjacent chambers in the chambers 111 to 130 are connected through a gate valve. The chamber 111 is a load lock chamber in which processing for attaching the substrate 1 to the carrier 10 is performed. The chamber 116 is an unload lock chamber in which processing for removing the substrate 1 from the carrier 10 is performed.

  As a more specific example, an example in which the processing system 100 is applied to a processing apparatus for manufacturing a hard disk will be described. The substrate 1 can be, for example, a metal or glass disk-like member having a hole in the center portion. The carrier 10 can be configured to hold two substrates.

  First, two unprocessed substrates 1 in the chamber 111 are attached to the leading carrier 10. The carrier 10 moves to the chamber 117 for forming the adhesion layer, and the adhesion layer is formed on the substrate 1. During this time, two unprocessed substrates 1 are attached to the second carrier 10.

  Next, the soft magnetic layer is formed on the substrate 1 while the leading carrier 10 sequentially moves to the chambers 118, 119 and 120 for forming the soft magnetic layer. During this time, the second carrier 10 moves to the chamber 117 for forming the adhesion layer, the adhesion layer is formed on the substrate 1, and the substrate 1 is attached to the third carrier 10 in the chamber 111. . In this manner, each time the leading carrier 10 and the subsequent carrier 10 move, the substrate 1 is attached to the subsequent carrier 10 in the chamber 111.

  The leading carrier 10 holding the substrate 1 on which the soft magnetic layer is formed moves to the chamber 121 for forming the seed layer, and the seed layer is formed on the substrate 1. Thereafter, the leading carrier 10 sequentially moves to chambers 123 and 124 for forming an intermediate layer, chambers 126 and 127 for forming a magnetic film, and a chamber 129 for forming a protective film.

  Chambers 112, 113, 114, and 115 are arranged at the four corners in the rectangular layout. The chambers 112, 113, 114, and 115 are chambers including a direction changing device that changes the transport direction of the carrier 10 (substrate 1) by 90 degrees.

  The chambers 117 to 130 (excluding 112 to 114) are components of the film forming apparatus. 2 and 3 are diagrams showing a configuration of one film forming apparatus, and each of the chambers 117 to 130 (excluding 112 to 114) corresponds to the chamber 201 of FIG. FIG. 2 is a cross-sectional view of the film forming apparatus 200 taken along a plane (plane along the transport direction) orthogonal to the transport direction of the carrier 10 (substrate 1). FIG. 3 shows a cross-sectional view (a cross-sectional arrow view) along the line A-A ′ of FIG. 2. FIG. 4 shows a configuration of a cathode unit 430 that holds and drives a target (a sputtering target) 50. The film forming apparatus 200 is configured as a sputtering apparatus.

  The film forming apparatus (sputtering apparatus) 200 includes a chamber 201, a transport apparatus 230 that transports the carrier 10, and gate valves 220 disposed on the upstream side and the downstream side of the transport path of the carrier 10 by the transport apparatus 230. The chamber 201 is connected to an adjacent chamber through a gate valve 220.

  The film forming apparatus 200 includes a gas supply unit 290 and an exhaust device 202. Gas is supplied to the chamber 201 by the gas supply unit 290, and the gas in the chamber 201 is exhausted by the exhaust device 202, whereby the pressure in the chamber 201 is controlled to the target pressure.

  In this embodiment, in the chamber 201, a film is simultaneously formed on the two surfaces of the two substrates 1 by sputtering. Four targets 50 are disposed in the chamber 201. Specifically, the first target 50 opposes one surface of the first substrate, the second target 50 opposes the other surface of the first substrate, and the one surface of the second substrate. The third target 50 faces and the fourth target 50 faces the other surface of the second substrate. Each of the first to fourth targets 50 is held and driven by one cathode unit 430. The film forming apparatus 200 may be configured such that a film is formed only on one substrate 1 at a time in one chamber 201.

  As illustrated in FIG. 4, the cathode unit 430 includes an electrode unit 432 and a rotation driving unit 434. The electrode unit 432 includes, as its constituent elements, an electrode (cathode) 310 as a backing plate, a first magnet 331, a second magnet 332, a first shield 340, a second shield 361, and a third shield 352. May be included. The electrode 310 includes a holding unit 311 that holds the target 50, and is configured to apply a potential to the target 50 via the holding unit 311. For example, a potential can be applied to the electrode 310 from a power source 371 via the base member 320 and the rotation driving unit 434. The power source 371 can be, for example, a pulse DC power source, but may be another power source. A potential can be applied to the shield 340 from the power source 252 via the rotation driving unit 434. A potential can be applied to the shields 361 and 352 from the power supply 254 via the rotation drive unit 434. The rotation drive unit 434 has a structure for integrally rotating the components of the electrode unit 432. The rotation drive unit 434 will be described later.

  The 1st magnet 331 and the 2nd magnet 332 may be constituted by a permanent magnet, for example. The first magnet 331 and the second magnet 332 are spaced apart from each other in a direction along the substrate placement surface SS so as to sandwich the space SP between the substrate placement surface SS where the substrate 1 is to be placed and the holding unit 311. Are arranged. The shield 340 is arranged at a position between the first magnet 331 and the second magnet 332 and between the substrate arrangement surface SS and the holding unit 311.

  As illustrated in FIG. 5 or FIG. 6, the target 50 includes a first portion 51 to be disposed between the first magnet 331 and the space SP, and a space between the second magnet 332 and the space SP. It includes a second portion 52 to be disposed, and a connecting portion 53 that connects the first portion 51 and the second portion 52. In the target 50, the connecting portion 53 is fixed to the holding portion 311. The holding part 311 has an engaging part 312 with which a fixing member 315 for fixing the target 50 is engaged. In one example, the engaging portion 312 is a screw hole, and the fixing member 315 is a screw. The fixing member 315 passes through the hole 55 provided in the connecting portion 53 of the target 50 and is screwed into the engaging portion 312. A potential is applied to the first portion 51 and the second portion 52 from the electrode 310 via the connecting portion 53.

  The structure in which the target 50 is supported by the holding portion 311 of the electrode 310 holding the connecting portion 53 among the first portion 51, the second portion 52, and the connecting portion 53 of the target 50 is that the target 50 is mounted on the electrode 310. And it is advantageous for facilitating the work of removing the target 50 from the electrode 310.

  FIG. 5 shows one configuration example of the target 50. The first portion 51 and the second portion 52 of the target 50 may be parallel to each other, as illustrated in FIG. Both the first portion 51 and the second portion 52 of the target 50 may have a flat plate shape. In the space between the first part 51 and the second part 52, a magnetic field having a direction from the first part 51 to the second part 52 or from the second part 52 to the first part 51 is formed.

  FIG. 4 illustrates the magnetic poles of the first magnet 331 and the second magnet 332. In the example shown in FIG. 4, the first magnet 331 is arranged so that the south pole faces the discharge space SP, and the second magnet 332 is arranged so that the north pole faces the discharge space SP. That is, in the example shown in FIG. 4, the S pole of the first magnet 331 and the N pole of the second magnet 332 are opposed to each other and are perpendicular to the mutually opposing surfaces of the first portion 51 and the second portion 52. A magnetic field whose direction coincides with any direction is formed. 4, the first magnet 331 and the second magnet 332 may be arranged so that the N pole of the first magnet 331 and the S pole of the second magnet 332 are opposed to each other. .

  A uniform magnetic field can be formed in the discharge space SP by forming a magnetic field whose direction coincides with a direction perpendicular to the mutually opposing surfaces of the first portion 51 and the second portion 52 of the target 50. A uniform magnetic field in the discharge space SP has an effect of suppressing redeposition to the target 50.

  FIG. 6 shows another configuration example of the target 50. The first portion 51 and the second portion 52 of the target 50 may be portions facing each other in the cylindrical portion 54, as illustrated in FIG.

  It is preferable that the 1st part 51, the 2nd part 52, and the connection part 53 are integrally comprised with the same material. However, the first portion 51 and the second portion 52 may be made of the same material (target material, for example, carbon), and the connecting portion 53 may be made of a material different from the material of the first portion 51 and the second portion 52. . In this case, in order to efficiently cool the first portion 51 and the second portion 52 and to supply an efficient potential to the first portion 51 and the second portion 52, the electric conductivity and the heat conductivity are reduced. The connecting portion 53 should be formed of a superior material.

  Further, the first portion 51 and the second portion 52 may be made of different materials. In this case, a film made of different materials is formed on the substrate 1, that is, simultaneous sputtering is realized.

  The shield 340 may be supplied with a potential that can prevent the connection portion 53 of the target 50 from being sputtered, for example, a ground potential. The shield 340 is disposed away from the connecting portion 53 so as not to short-circuit with the connecting portion 53.

  A positive potential may be applied to the shield 340. By applying a positive potential to the shield 340, positive potential ions between the first portion 51 and the second portion 52 can be pushed out toward the substrate 1. On the other hand, the neutral particles are not affected by the potential of the shield 340. When the target 50 is made of carbon, film formation using carbon ions can be performed more efficiently. The substrate 1 during film formation can be at a floating potential.

  The holding unit 311 has a first surface S1 for holding the target 50 and a second surface S2 on the opposite side of the first surface S1, and the film forming apparatus 200 is arranged on the second surface S2 of the holding unit 311. On the side, a cooling channel 370 for cooling the electrode 310 may be provided. The cooling channel 370 may be formed between the electrode 310 (holding unit 311) and the base member 320. The first portion 51 and the second portion 52 of the target 50 are cooled by cooling the connection portion 53 of the target 50 via the holding unit 311 by the cooling medium flowing through the cooling channel 370.

  Between the first magnet 331 and the position where the first portion 51 of the target 50 is to be disposed, and between the second magnet 332 and the position where the second portion 52 of the target 50 is to be disposed, the cooling medium. It is preferable that no cooling channel is provided for flowing the water. Cooling channels are disposed between the first magnet 331 and the position where the first portion 51 of the target 50 is to be disposed, and between the second magnet 332 and the position where the second portion 52 of the target 50 is to be disposed. By not, the magnetic field generated by the first magnet 331 and the second magnet 332 can be guided to the space SP with little attenuation. This is advantageous in reducing the size of the first magnet 331 and the second magnet 332.

  The film forming apparatus 200 or the electrode unit 432 may further include the above-described second shield 361 between the position where the first magnet 331 and the second magnet 332 are arranged and the substrate arrangement surface SS. The film forming apparatus 200 or the electrode unit 432 can further include a block 351 and a third shield 352. The block 351 can be disposed outside the first magnet 331 and the second magnet 332. The block 351 can be made of aluminum, for example. The third shield 352 may be disposed so as to surround the block 351, the electrode 310, and the base member 320. The third shield 352 can be electrically connected to the second shield 361. The second shield 361 and the third shield 352 can be grounded.

  While supplying the gas from the gas supply unit 290 to the chamber 201, the exhaust device 202 exhausts the gas in the chamber 201 to control the pressure in the chamber 201 to the target pressure, while the target is supplied from the power source 371 through the electrode 310. By applying a potential to the 50 first portion 51 and the second portion 52, a discharge occurs in the space SP. The first portion 51 and the second portion 52 of the target 50 are sputtered by the ions generated thereby. Thereby, a film is formed on the substrate 1 by the particles flying from the first portion 51 and the second portion 52 of the target 50.

  Hereinafter, the cathode unit 430 will be described. As described above, the cathode unit 430 includes the electrode unit 432 and the rotation driving unit 434. The electrode unit 432 may include an electrode (cathode) 310, a first magnet 331, a second magnet 332, a first shield 340, a second shield 361, a third shield 352, a base member 320, and a bottom plate 419.

  The rotation drive unit 434 includes a rotation shaft 417 connected to the bottom plate 419 and a rotary joint 401 connected to the rotation shaft 417. A gear 418 is provided on the outer periphery of the rotating shaft 417. A gear 416 fixed to the rotation shaft of the motor 416 is engaged with the gear 418. The rotational force generated by the motor 415 is transmitted to the rotary shaft 417 via the gears 416 and 418, whereby the cathode unit 430 rotates together with the rotary shaft 417.

  A magnetic seal 403 is provided between the rotary shaft 417 and the opening provided in the chamber 201. The gears 418 and 416, the motor 415, and the rotary joint 401 are disposed outside the chamber 201 (that is, the atmosphere side).

  The rotary joint 401 is provided to connect the electrode unit 432 to the air-side power supplies 371, 252, and 254 and the temperature control unit 256 through the rotation shaft 417. The power source 371 applies a potential to the electrode (cathode) 310 via the rotary joint 401 and the rotating shaft 417. The power source 252 applies a potential to the first shield 340 via the rotary joint 401 and the rotating shaft 417. The power source 254 applies a potential to the second shield 361 and the third shield 352 via the rotary joint 401 and the rotating shaft 417. The temperature adjustment unit 256 causes a cooling medium for temperature adjustment to flow through the cooling channel 370 via the rotary joint 401 and the rotation shaft 417. As the rotary joint 401, for example, a rotary joint described in International Publication No. 2013/0888603 can be employed.

  A disc 413 is fixed to the rotating shaft 417, and the disc 413 and the sensor 414 can constitute an encoder. A black body 426 is provided in a semicircular shape on the surface of the disk 413 on the sensor 414 side. The rotation of the rotation shaft 417 (that is, the rotation of the electrode portion 432) is detected by detecting the black body portion 426 by the sensor 414. The sensor 414 may be any sensor that can discriminate between the black body portion 26 and other than the black body portion (disc 413). For example, a FU-6F sensor manufactured by Keyence can be used. Instead of such a configuration, a configuration in which the rotation of the electrode unit 432 is detected by detecting a mark or the like provided on the electrode unit 432 may be employed.

  According to this embodiment, the in-plane variation of the film formed on the substrate 1 can be reduced by rotating the electrode part 432. The target 50 having the first portion 51, the second portion 52, and the connecting portion 53 and the holding portion 311 that holds the target 50 contribute to facilitating maintenance such as replacement of the target 50. The configuration in which the cooling channel is not disposed between the first magnet 331 and the first portion 51 and between the second magnet 332 and the second portion 52 is a distance between the first magnet 331 and the first portion 51. It is advantageous to reduce the distance between the second magnet 332 and the second portion 52, which contributes to the miniaturization of the first magnet 331 and the second magnet 332.

50: target, 310: electrode, 331: first magnet, 332: second magnet, 340: shield, 434: rotation drive unit

Claims (9)

A sputtering apparatus for forming a film on a substrate by sputtering in a chamber,
An electrode having a holding part for holding the target and applying a potential to the target through the holding part;
A first magnet and a second magnet arranged so as to sandwich a space between a substrate placement surface on which the substrate is to be placed and the holding unit, and spaced apart from each other in a direction along the substrate placement surface;
A shield disposed between the first magnet and the second magnet and between the substrate placement surface and the holding portion;
A rotation driving unit that integrally rotates the target, the first magnet, and the second magnet;
A sputtering apparatus comprising: Electric power is supplied to the electrodes via the rotation drive unit.
The sputtering apparatus according to claim 1. A potential is applied to the shield via the rotation driving unit.
The sputtering apparatus according to claim 1 or 2. The target includes a first portion to be disposed between the first magnet and the space, a second portion to be disposed between the second magnet and the space, the first portion, and the A connecting portion connecting the second portion,
The connecting portion is fixed to the holding portion;
The sputtering apparatus according to claim 1. The holding portion has a first surface for holding the target, and a second surface opposite to the first surface,
The sputtering apparatus includes a cooling channel for cooling the electrode on the second surface side of the holding unit,
The first part and the second part of the target are cooled by cooling the connecting part via the holding part by a cooling medium flowing through the cooling channel.
The sputtering apparatus according to claim 4. The cooling medium is supplied to the cooling channel via the rotation drive unit.
The sputtering apparatus according to claim 5. A cooling medium is allowed to flow between the first magnet and the position where the first portion of the target is to be disposed and between the second magnet and the position where the second portion of the target is to be disposed. No cooling channel for,
The sputtering apparatus according to any one of claims 4 to 6, wherein:   The sputtering apparatus according to claim 4, wherein the first part and the second part have a flat plate shape and are arranged in parallel to each other. The first magnet and the second magnet are provided so that a magnetic field in a direction perpendicular to the surfaces of the first portion and the second portion facing each other is formed.
The sputtering apparatus according to claim 8.