JP2015043374A - Component for mounting light emitting element and light emitting device - Google Patents

Component for mounting light emitting element and light emitting device Download PDF

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JP2015043374A
JP2015043374A JP2013174643A JP2013174643A JP2015043374A JP 2015043374 A JP2015043374 A JP 2015043374A JP 2013174643 A JP2013174643 A JP 2013174643A JP 2013174643 A JP2013174643 A JP 2013174643A JP 2015043374 A JP2015043374 A JP 2015043374A
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light emitting
emitting element
electrode
wiring
light
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JP6423141B2 (en
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三千男 今吉
Michio Imayoshi
三千男 今吉
健治 杉本
Kenji Sugimoto
健治 杉本
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

PROBLEM TO BE SOLVED: To provide a component for mounting a light emitting element which improves heat radiation performance and in which a protection element is mounted on a lower surface, and to provide a light emitting device.SOLUTION: A component 1 for mounting a light emitting element includes: an insulation base substance 11; wiring 12 formed on an upper surface of the insulation base substance 11, the wiring 12 where a light emitting element 2 is mounted; and an electrode 13 formed on a lower surface of the insulation base substance 11. The electrode 13 includes a first portion 131 where a protection element 3 is mounted and a second portion 132 connected with an external circuit board 4. The second portion 132 is thicker than the first portion 131.

Description

本発明は、例えば発光ダイオード等の発光素子搭載用部品および発光装置に関するものである。   The present invention relates to a component for mounting a light emitting element such as a light emitting diode and a light emitting device.

発光ダイオード等の発光素子搭載用部品は、絶縁基体と、絶縁基体の上面に設けられた配線と、絶縁基体の下面に設けられ、外部回路基板に接続するための電極とを有している。発光装置は、発光素子搭載用部品と、発光素子搭載用部品の配線上に搭載された発光素子と、発光素子を過電圧から保護する保護素子とを有している。   A component for mounting a light emitting element such as a light emitting diode has an insulating base, wiring provided on the upper surface of the insulating base, and an electrode provided on the lower surface of the insulating base and connected to an external circuit board. The light emitting device includes a light emitting element mounting component, a light emitting element mounted on the wiring of the light emitting element mounting component, and a protection element that protects the light emitting element from overvoltage.

このような発光装置においては、基板の上面に発光素子を搭載し、基板の下面に保護素子を搭載することで小型化を図っているものがある。そして、基板の下面の保護素子の搭載領域の外側に第２の基板や枠体を設けて保護素子を収容する空間を設けたものがある（例えば、特許文献１、２参照。）。   In some of such light emitting devices, a light emitting element is mounted on the upper surface of the substrate and a protective element is mounted on the lower surface of the substrate to reduce the size. In some cases, a second substrate or a frame body is provided outside the protection element mounting region on the lower surface of the substrate to provide a space for accommodating the protection element (see, for example, Patent Documents 1 and 2).

特開2000-124506号公報JP 2000-124506 A 特開2007-273852号公報JP 2007-273852 A

しかしながら、近年は、発光素子の高輝度化等により、発光装置の放熱性を高めることが求められている。従来の発光装置においては、発光装置から外部回路基板への伝熱は、基板、第２の基板（または枠体）および第２の基板（または枠体）の下面に設けられた電極を介して行われるため、発光装置の熱を外部に良好に放熱しにくいことが懸念される。   However, in recent years, it has been demanded to improve heat dissipation of the light emitting device by increasing the luminance of the light emitting element. In the conventional light emitting device, heat transfer from the light emitting device to the external circuit board is performed via the substrate, the second substrate (or frame), and the electrodes provided on the lower surface of the second substrate (or frame). Therefore, there is a concern that the heat of the light emitting device is difficult to dissipate well to the outside.

本発明の一つの態様によれば、絶縁基体と、該絶縁基体の上面に形成され、発光素子が搭載される配線と、該絶縁基体の下面に形成された電極とを備えており、該電極は、保護素子が搭載される第１の部分と外部回路基板に接続される第２の部分とを有し、前記第２の部分の厚みが前記第１の部分の厚みよりも厚い。   According to one aspect of the present invention, an insulating substrate, the wiring formed on the upper surface of the insulating substrate, on which the light emitting element is mounted, and the electrode formed on the lower surface of the insulating substrate are provided. Has a first part on which the protection element is mounted and a second part connected to the external circuit board, and the thickness of the second part is larger than the thickness of the first part.

本発明の他の態様によれば、発光装置は、上記構成の発光素子搭載用部品と、該発光素子搭載用部品における前記配線に搭載された発光素子と、前記電極の前記第１の部分に搭載された保護素子とを備えている。   According to another aspect of the present invention, a light emitting device includes: a light emitting element mounting component configured as described above; a light emitting element mounted on the wiring in the light emitting element mounting component; and the first portion of the electrode. And a mounted protective element.

本発明の一つの態様による発光素子搭載用部品は、電極は、保護素子が搭載される第１の部分と外部回路基板に接続される第２の部分とを有し、第２の部分の厚みが第１の部分の厚みよりも厚いことによって、外部回路基板に実装した際に保護素子を収容する空間を設けつつ、基板と比較して熱伝導率の高い電極を介して発光素子搭載用部品から外部回路基板へ伝熱することができ、小型で放熱性に優れた発光素子搭載用部品とすることができる。   In the light-emitting element mounting component according to one aspect of the present invention, the electrode has a first part on which the protection element is mounted and a second part connected to the external circuit board, and the thickness of the second part. Is thicker than the thickness of the first portion, so that a space for accommodating the protective element when mounted on the external circuit board is provided, and the light emitting element mounting component is provided via an electrode having a higher thermal conductivity than that of the board. Can be transferred to the external circuit board, and the light-emitting element mounting component having a small size and excellent heat dissipation can be obtained.

本発明の他の態様による発光装置は、上記構成の発光素子搭載用部品と、発光素子搭載用部品における配線に搭載された発光素子と、電極の第１の部分に搭載された保護素子と
を備えていることによって、放熱性に優れているので、信頼性に優れた発光装置とすることができる。 A light-emitting device according to another aspect of the present invention includes a light-emitting element mounting component configured as described above, a light-emitting element mounted on a wiring in the light-emitting element mounting component, and a protection element mounted on a first portion of the electrode. By providing, since it is excellent in heat dissipation, it can be set as the light-emitting device excellent in reliability.

（ａ）は、本発明の第１の実施形態における発光装置を示す上面図であり、（ｂ）は（ａ）の下面図である。(A) is a top view which shows the light-emitting device in the 1st Embodiment of this invention, (b) is a bottom view of (a). （ａ）は、図１（ａ）のＡ−Ａ線における断面図であり、（ｂ）は、（ａ）のＡ部における要部拡大断面図である。(A) is sectional drawing in the AA of FIG. 1 (a), (b) is a principal part expanded sectional view in the A section of (a). 図１の発光装置を外部回路基板に接続した状態を示す断面図である。It is sectional drawing which shows the state which connected the light-emitting device of FIG. 1 to the external circuit board. （ａ）は、本発明の第２の実施形態における発光装置を示す上面図であり、（ｂ）は（ａ）の下面図である。(A) is a top view which shows the light-emitting device in the 2nd Embodiment of this invention, (b) is a bottom view of (a). （ａ）は、本発明の第３の実施形態における発光装置を示す上面図であり、（ｂ）は（ａ）の下面図である。(A) is a top view which shows the light-emitting device in the 3rd Embodiment of this invention, (b) is a bottom view of (a). 図５（ａ）のＡ−Ａ線における断面図である。It is sectional drawing in the AA line of Fig.5 (a). 本発明の第３の実施形態の他の例における発光装置の断面図である。It is sectional drawing of the light-emitting device in the other example of the 3rd Embodiment of this invention. （ａ）は、本発明の第４の実施形態における発光装置を示す上面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面図である。(A) is a top view which shows the light-emitting device in the 4th Embodiment of this invention, (b) is sectional drawing in the AA of (a).

本発明のいくつかの例示的な実施形態について、添付の図面を参照しつつ説明する。   Several exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

（第１の実施形態）
本発明の第１の実施形態における発光装置は、図１〜図３に示されているように、発光素子搭載用部品１と、発光素子搭載用部品１の上面に搭載された発光素子２と、発光素子搭載用部品１の下面に搭載された保護素子３とを備えている。発光装置は、例えば照明機器を構成する外部回路基板４上に搭載される。 (First embodiment)
The light emitting device according to the first embodiment of the present invention includes a light emitting element mounting component 1 and a light emitting element 2 mounted on the upper surface of the light emitting element mounting component 1 as shown in FIGS. And a protective element 3 mounted on the lower surface of the light-emitting element mounting component 1. For example, the light emitting device is mounted on an external circuit board 4 constituting a lighting device.

発光素子搭載用部品１は、絶縁基体11と、絶縁基体11の上面に形成された配線12と、絶縁基体11の下面に形成された電極13と、絶縁基体11の表面および内部に形成され、配線12と電極13とを電気的に接続している配線導体14とを備えている。電極13は、保護素子３が搭載される第１の部分131と、外部回路基板４に接続される第２の部分132とを有し、第２の部分132の厚みが第１の部分131の厚みよりも厚い。図１〜図３において、発光装置は仮想のｘｙｚ空間に設けられており、以下、便宜的に、上方向とは仮想のｚ軸の正方向のことをいう。   The light-emitting element mounting component 1 is formed on the insulating base 11, the wiring 12 formed on the upper surface of the insulating base 11, the electrode 13 formed on the lower surface of the insulating base 11, the surface and the inside of the insulating base 11, A wiring conductor 14 that electrically connects the wiring 12 and the electrode 13 is provided. The electrode 13 has a first portion 131 on which the protection element 3 is mounted and a second portion 132 connected to the external circuit board 4, and the thickness of the second portion 132 is that of the first portion 131. Thicker than thickness. 1 to 3, the light emitting device is provided in a virtual xyz space. Hereinafter, for convenience, the upward direction refers to the positive direction of the virtual z axis.

絶縁基体11は、発光素子２の搭載領域となる発光素子２を含む上面を有しており、平面視において矩形の板状の形状を有している。絶縁基体11は、発光素子２を支持するための支持体として機能し、上面中央部の一方の配線12上に発光素子２が低融点ろう材または導電性樹脂等の接合材を介して接着され固定される。   The insulating base 11 has an upper surface including the light emitting element 2 to be a mounting region of the light emitting element 2 and has a rectangular plate shape in plan view. The insulating base 11 functions as a support for supporting the light emitting element 2, and the light emitting element 2 is bonded onto one wiring 12 at the center of the upper surface via a bonding material such as a low melting point brazing material or a conductive resin. Fixed.

絶縁基体11は、例えば、酸化アルミニウム質焼結体（アルミナセラミックス），窒化アルミニウム質焼結体，ムライト質焼結体またはガラスセラミックス焼結体等のセラミックスを用いることができる。   As the insulating substrate 11, for example, ceramics such as an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, or a glass ceramic sintered body can be used.

絶縁基体11が、樹脂材料を用いて作製される場合は、例えば、エポキシ樹脂，ポリイミド樹脂，アクリル樹脂，フェノール樹脂，ポリエステル樹脂、または四フッ化エチレン樹脂を始めとするフッ素系樹脂等を用いることができる。   When the insulating substrate 11 is manufactured using a resin material, for example, an epoxy resin, a polyimide resin, an acrylic resin, a phenol resin, a polyester resin, or a fluorine resin such as a tetrafluoroethylene resin is used. Can do.

絶縁基体11が、例えば酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウム，酸化珪素，酸化マグネシウムおよび酸化カルシウム等の原料粉末に適当な有機バイ
ンダーおよび溶剤等を添加混合して泥漿状とし、これをドクターブレード法やカレンダーロール法等によってシート状に成形してセラミックグリーンシートを得て、しかる後、セラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを必要に応じて複数枚積層し、高温（約1600℃）で焼成することによって製作される。 If the insulating substrate 11 is made of, for example, an aluminum oxide sintered body, a suitable organic binder and solvent are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide to form a slurry. Then, this is formed into a sheet by the doctor blade method or calendar roll method to obtain a ceramic green sheet, and after that, the ceramic green sheet is appropriately punched and laminated as necessary. Manufactured by firing at high temperature (about 1600 ° C).

配線12は、絶縁基体11の上面に形成されている。配線12は、発光素子搭載用部品１に搭載された発光素子２と外部回路基板４とを電気的に接続するため、および発光素子搭載用部品１と発光素子２とを接合するために用いられる。   The wiring 12 is formed on the upper surface of the insulating base 11. The wiring 12 is used to electrically connect the light emitting element 2 mounted on the light emitting element mounting component 1 and the external circuit board 4 and to join the light emitting element mounting component 1 and the light emitting element 2 together. .

電極13は、絶縁基体11の下面に形成されている。電極13は、外部回路基板４に接続するための第１の部分131と、保護素子３を搭載するための第２の部分132とを有している。図２（ｂ）に示される例のように、電極13の第１の部分131の厚みＨ１は、電極13の第２の
部分132の厚みＨ２よりも厚い（Ｈ１＞Ｈ２）。電極13の第１の部分131は、例えば、30〜150μｍ程度に形成され、第２の部分132は、例えば、5〜30μｍ程度に形成される。保護
素子３は、第１の部分131と第２の部分132の厚み差によって形成される段差部分に収納される。 The electrode 13 is formed on the lower surface of the insulating substrate 11. The electrode 13 has a first portion 131 for connecting to the external circuit board 4 and a second portion 132 for mounting the protection element 3. As shown in the example shown in FIG. 2B, the thickness H1 of the first portion 131 of the electrode 13 is thicker than the thickness H2 of the second portion 132 of the electrode 13 (H1> H2). The first portion 131 of the electrode 13 is formed with a thickness of about 30 to 150 μm, for example, and the second portion 132 is formed with a thickness of about 5 to 30 μm, for example. The protection element 3 is housed in a stepped portion formed by a thickness difference between the first portion 131 and the second portion 132.

また、図３に示される例のように、保護素子３は段差と半田等の接合材で形成される発光素子搭載用部品１と外部回路基板４との間の空間に収容される。   Further, as in the example shown in FIG. 3, the protective element 3 is accommodated in a space between the light emitting element mounting component 1 and the external circuit board 4 formed of a step and a bonding material such as solder.

また、電極13は、絶縁基体11の下面を覆うように設けられており、例えば絶縁基体11の下面の50％以上の面積、好ましくは80％以上の面積を有していると発光素子２の熱から発光素子搭載用部品１に伝わった熱を電極13の第２の部分132を介して外部回路基板４に良
好に放熱することができる。 In addition, the electrode 13 is provided so as to cover the lower surface of the insulating base 11. For example, the electrode 13 has an area of 50% or more, preferably 80% or more of the lower surface of the insulating base 11. The heat transferred from the heat to the light emitting element mounting component 1 can be radiated to the external circuit board 4 through the second portion 132 of the electrode 13 in a favorable manner.

配線導体14は、絶縁基体11の表面および内部に設けられている。配線導体14の一端部は、例えば、絶縁基体11の上面にて配線12に接続しており、配線導体13の他端部は、絶縁基体11の下面にて電極13に接続している。配線導体14は、配線基板１の配線12に搭載された発光素子２と外部回路基板４とを電気的に接続するためのものである。配線導体14は、絶縁基体11の表面または内部に設けられた配線導体と、絶縁基体11を構成する絶縁層を貫通して上下に位置する、配線と配線導体または電極と配線導体、あるいは配線導体同士を電気的に接続する貫通導体とを含んでいる。   The wiring conductor 14 is provided on the surface and inside of the insulating base 11. For example, one end of the wiring conductor 14 is connected to the wiring 12 on the upper surface of the insulating base 11, and the other end of the wiring conductor 13 is connected to the electrode 13 on the lower surface of the insulating base 11. The wiring conductor 14 is for electrically connecting the light emitting element 2 mounted on the wiring 12 of the wiring board 1 and the external circuit board 4. The wiring conductor 14 is a wiring conductor provided on or in the insulating base 11, and a wiring and a wiring conductor or an electrode and a wiring conductor, or a wiring conductor, which are positioned above and below the insulating layer constituting the insulating base 11. And a through conductor that electrically connects each other.

配線12および電極13ならびに配線導体14は、タングステン（Ｗ），モリブデン（Ｍｏ），マンガン（Ｍｎ），銀（Ａｇ）または銅（Ｃｕ）等の金属材料を用いることができる。例えば、絶縁基体11が酸化アルミニウム質焼結体から成る場合であれば、Ｗ，ＭｏまたはＭｎ等の高融点金属粉末に適当な有機バインダーおよび溶媒等を添加混合して得た配線12、電極13、配線導体14用の導体ペーストを、絶縁基体11となるセラミックグリーンシートに予めスクリーン印刷法によって所定のパターンに印刷塗布して、絶縁基体11となるセラミックグリーンシートと同時に焼成することによって、絶縁基体11の所定位置に被着形成される。配線導体14が貫通導体である場合は、金型やパンチングによる打ち抜き加工やレーザー加工によってグリーンシートに貫通孔を形成して、この貫通孔に印刷法によって配線導体14用の導体ペーストを充填しておくことによって形成される。   For the wiring 12, the electrode 13, and the wiring conductor 14, a metal material such as tungsten (W), molybdenum (Mo), manganese (Mn), silver (Ag), or copper (Cu) can be used. For example, when the insulating substrate 11 is made of an aluminum oxide sintered body, the wiring 12 and the electrode 13 obtained by adding and mixing an appropriate organic binder and solvent to a refractory metal powder such as W, Mo or Mn. The conductive paste for the wiring conductor 14 is preliminarily printed and applied in a predetermined pattern to the ceramic green sheet to be the insulating base 11 by screen printing, and is fired at the same time as the ceramic green sheet to be the insulating base 11. It is deposited on 11 predetermined positions. When the wiring conductor 14 is a through conductor, a through hole is formed in the green sheet by punching by a die or punching or laser processing, and a conductive paste for the wiring conductor 14 is filled into the through hole by a printing method. It is formed by placing.

配線12および電極13は、例えば、銅等からなり、ポストファイヤ法やフォトリソグラフィ法により形成されていても構わない。配線12および電極13がともにポストファイヤ法やフォトリソグラフィ法によって形成されている場合には、上述のような絶縁基体11となるセラミックグリーンシートと同時に焼成することによって絶縁基体11と一体的に形成されたものと比べて、配線12および電極13の精度が向上されている。従って、発光素子２の搭載位置に関する精度が向上されて、発光装置において所望の発光強度分布を得やすくなっ
ている。 The wiring 12 and the electrode 13 are made of, for example, copper or the like, and may be formed by a post-fire method or a photolithography method. When both the wiring 12 and the electrode 13 are formed by a post-fire method or a photolithography method, the wiring 12 and the electrode 13 are integrally formed with the insulating base 11 by firing together with the ceramic green sheet that becomes the insulating base 11 as described above. Compared to the above, the accuracy of the wiring 12 and the electrode 13 is improved. Therefore, the accuracy with respect to the mounting position of the light emitting element 2 is improved, and a desired light emission intensity distribution is easily obtained in the light emitting device.

なお、配線12および電極13が例えばチタン（Ｔｉ）、クロム（Ｃｒ）、タンタル（Ｔａ）またはニッケル−クロム（Ｎｉ−Ｃｒ）合金等の金属材料を用いた薄膜層を含む場合には、例えばイオンプレーティング法、スパッタ法、蒸着法等の従来周知の薄膜形成方法を用いて形成される。例えば、絶縁基体11の表面にイオンプレーティング法、スパッタ法、蒸着法等により薄膜層を形成する。その後、フォトリソグラフィ法によりレジストパターンを形成し、余分な薄膜層をウェットエッチング法を用いて除去して形成する。また、薄膜層上に銅等から成るめっき層が形成されている場合には、めっき層の絶縁基体11に対する接合強度を向上させることができる。   When the wiring 12 and the electrode 13 include a thin film layer using a metal material such as titanium (Ti), chromium (Cr), tantalum (Ta), or nickel-chromium (Ni-Cr) alloy, for example, ions It is formed using a conventionally well-known thin film forming method such as a plating method, a sputtering method, or a vapor deposition method. For example, a thin film layer is formed on the surface of the insulating substrate 11 by ion plating, sputtering, vapor deposition, or the like. Thereafter, a resist pattern is formed by a photolithography method, and an excessive thin film layer is removed by using a wet etching method. Further, when a plating layer made of copper or the like is formed on the thin film layer, the bonding strength of the plating layer to the insulating substrate 11 can be improved.

また、配線導体14が貫通導体である場合は、レーザ法またはブラスト法等により形成された絶縁基体11の貫通孔に、銅めっきまたは活性ろう材によって貫通孔を埋める方法で形成しても構わない。   Further, when the wiring conductor 14 is a through conductor, it may be formed by a method of filling the through hole of the insulating base 11 formed by a laser method or a blast method with copper plating or an active brazing material. .

第１の部分131および第２の部分132を有する電極13は、例えば、以下の製造方法により製作できる。   The electrode 13 having the first portion 131 and the second portion 132 can be manufactured, for example, by the following manufacturing method.

第１の製造方法は、例えば、以下の方法により製作することができる。絶縁基体11用のセラミックグリーンシートの下面の第１の部分131および第２の部分132となる領域に、電極13用の導体ペーストを印刷塗布する。そして、第１の部分131となる領域に、電極13用
の導体ペーストを再度印刷塗布し、絶縁基体11用のセラミックグリーンシートと同時に焼成することにより、第１の部分131および第２の部分132を有する電極13が形成される。 The first manufacturing method can be manufactured, for example, by the following method. A conductor paste for the electrode 13 is printed and applied to a region to be the first portion 131 and the second portion 132 on the lower surface of the ceramic green sheet for the insulating substrate 11. Then, the first portion 131 and the second portion 132 are formed by reprinting and applying the conductor paste for the electrode 13 to the region to be the first portion 131 and firing it simultaneously with the ceramic green sheet for the insulating substrate 11. An electrode 13 having the following is formed.

第２の製造方法は、例えば、以下の方法により製作することができる。絶縁基体11用のセラミックグリーンシートの下面の第１の部分131および第２の部分132となる領域に、電極13用の導体ペーストを印刷塗布布し、絶縁基体11用のセラミックグリーンシートと同時に焼成する。そして、絶縁基体11の下面全体に、薄膜法やめっき法等により金属シード層を形成し、第１の部分131以外の領域をエッチング法等により除去することにより、第１
の部分131および第２の部分132を有する電極13が形成される。 The second manufacturing method can be manufactured by the following method, for example. The conductive paste for the electrode 13 is printed and applied on the area to be the first portion 131 and the second portion 132 on the lower surface of the ceramic green sheet for the insulating substrate 11, and fired simultaneously with the ceramic green sheet for the insulating substrate 11. To do. Then, a metal seed layer is formed on the entire lower surface of the insulating substrate 11 by a thin film method, a plating method, or the like, and a region other than the first portion 131 is removed by an etching method or the like, whereby the first
The electrode 13 having the first portion 131 and the second portion 132 is formed.

第３の製造方法は、例えば、以下の方法により製作することができる。絶縁基体11の下面に、絶縁基体11の下面全体に、薄膜法やめっき法等により金属シード層を形成し、電極13以外の領域をエッチング法等により除去する。さらに、絶縁基体11の下面全体に、薄膜法やめっき法等により第２金属シード層を形成し、第１の部分131以外の領域をエッチン
グ法等により除去することにより、第１の部分131および第２の部分132を有する電極13が形成される。 The third manufacturing method can be manufactured by the following method, for example. A metal seed layer is formed on the lower surface of the insulating substrate 11 on the entire lower surface of the insulating substrate 11 by a thin film method, a plating method, or the like, and regions other than the electrodes 13 are removed by an etching method or the like. Further, a second metal seed layer is formed on the entire lower surface of the insulating substrate 11 by a thin film method, a plating method, or the like, and a region other than the first portion 131 is removed by an etching method or the like. An electrode 13 having a second portion 132 is formed.

電極13の第１の部分131は、例えば、熱伝導率の高い銅等を、10〜130μｍ程度に厚く介在して形成していると、発光素子搭載用部品１から外部回路基板４への放熱性を良好なものとすることができる。   When the first portion 131 of the electrode 13 is formed with, for example, copper having high thermal conductivity and a thickness of about 10 to 130 μm, the heat is dissipated from the light emitting element mounting component 1 to the external circuit board 4. The property can be improved.

配線12および電極13の露出する表面には、さらに電解めっき法または無電解めっき法によって金属めっき層が被着されている。金属めっき層は、ニッケル，銅，金または銀等の耐食性や接続部材との接続性に優れる金属から成るものであり、例えば、厚さ0.5〜５μ
ｍ程度のニッケルめっき層と0.1〜３μｍ程度の金めっき層とが、あるいは厚さ１〜10μ
ｍ程度のニッケルめっき層と0.1〜１μｍ程度の銀めっき層とが、順次被着される。これ
によって、配線12および電極13が腐食することを効果的に抑制できるとともに、配線12と発光素子２との接合材による接合や配線12とボンディングワイヤ等の接続部材５との接合や、電極13と外部回路基板４の配線との接合を強固にできる。 A metal plating layer is further deposited on the exposed surfaces of the wiring 12 and the electrode 13 by electrolytic plating or electroless plating. The metal plating layer is made of a metal having excellent corrosion resistance such as nickel, copper, gold, or silver, and connectivity with a connection member, and has a thickness of 0.5 to 5 μm, for example.
m nickel plating layer and 0.1-3 μm gold plating layer, or thickness 1-10 μm
A nickel plating layer of about m and a silver plating layer of about 0.1 to 1 μm are sequentially deposited. Accordingly, corrosion of the wiring 12 and the electrode 13 can be effectively suppressed, the bonding of the wiring 12 and the light emitting element 2 by the bonding material, the bonding of the wiring 12 and the connecting member 5 such as a bonding wire, and the electrode 13 And the wiring of the external circuit board 4 can be firmly joined.

また、上記以外の金属からなる金属めっき層、例えば、パラジウムめっき層等を介在させていても構わない。   Moreover, you may interpose the metal plating layer which consists of metals other than the above, for example, a palladium plating layer.

発光素子搭載用部品１の上面に発光素子２が搭載され、発光素子搭載用部品１の下面に保護素子３が搭載されることによって発光装置が作製される。   The light emitting element 2 is mounted on the upper surface of the light emitting element mounting component 1, and the protective element 3 is mounted on the lower surface of the light emitting element mounting component 1, thereby manufacturing the light emitting device.

保護素子３は、例えば、ツェナーダイオード素子である。発光素子２とツェナーダイオード素子とは、電気的に並列に接続されている。ツェナーダイオード素子は、例えば、発光素子２を過電圧から保護するものである。   The protection element 3 is, for example, a Zener diode element. The light emitting element 2 and the Zener diode element are electrically connected in parallel. The Zener diode element protects the light emitting element 2 from overvoltage, for example.

例えば、発光素子２がワイヤボンディング型である場合には、発光素子２は、低融点ろう材または導電性樹脂等の接合材によって一方の配線12上に固定して電気的に接続された後、ボンディングワイヤ等の接続部材５を介して発光素子２の電極と他方の配線12とが電気的に接続されることによって発光素子搭載用部品１の上面に搭載される。発光素子２がフリップチップ型である場合には、発光素子２は、はんだバンプ、金バンプまたは導電性樹脂（異方性導電樹脂等）等の接続部材５を介して発光素子２の電極と配線12とが電気的および機械的に接続されることによって発光素子搭載用部品１に搭載される。また、発光素子２は、例えば、樹脂やガラス等からなる封止材６または蓋体等により封止される。保護素子３は、例えば、低融点ろう材または導電性樹脂等の接合材によって、電極13の第２の部分132に固定して電気的に接続されることによって発光素子搭載用部品１の下面に搭
載される。 For example, when the light emitting element 2 is a wire bonding type, the light emitting element 2 is fixed on one wiring 12 by a bonding material such as a low melting point brazing material or a conductive resin and electrically connected thereto. The electrode of the light emitting element 2 and the other wiring 12 are electrically connected via a connecting member 5 such as a bonding wire, and thus mounted on the upper surface of the light emitting element mounting component 1. When the light-emitting element 2 is a flip chip type, the light-emitting element 2 is connected to the electrodes and wiring of the light-emitting element 2 via a connection member 5 such as a solder bump, a gold bump, or a conductive resin (anisotropic conductive resin or the like). 12 is electrically and mechanically connected to the light emitting element mounting component 1. In addition, the light emitting element 2 is sealed with, for example, a sealing material 6 made of resin or glass, a lid, or the like. The protective element 3 is fixed to the second portion 132 of the electrode 13 and electrically connected to the lower surface of the light emitting element mounting component 1 by, for example, a bonding material such as a low melting point brazing material or a conductive resin. Installed.

本実施形態の発光素子搭載用部品１によれば、絶縁基体11と、絶縁基体11の上面に形成され、発光素子２が搭載される配線12と、絶縁基体11の下面に形成された電極13とを備えており、電極13は、保護素子４が搭載される第１の部分131と外部回路基板４に接続され
る第２の部分132とを有し、第２の部分132の厚みが第１の部分131の厚みよりも厚いこと
から、外部回路基板４に実装した際に保護素子３を収容する空間を設けつつ、基板と比較して熱伝導率の高い電極13を介して発光素子搭載用部品１から外部回路基板４へ伝熱することができ、小型で放熱性に優れた発光素子搭載用部品１とすることができる。 According to the light emitting element mounting component 1 of the present embodiment, the insulating base 11, the wiring 12 formed on the upper surface of the insulating base 11, on which the light emitting element 2 is mounted, and the electrode 13 formed on the lower surface of the insulating base 11. The electrode 13 has a first portion 131 on which the protection element 4 is mounted and a second portion 132 connected to the external circuit board 4, and the thickness of the second portion 132 is the first Since it is thicker than the thickness of the portion 131, a light-emitting element is mounted via an electrode 13 having a higher thermal conductivity than the substrate while providing a space for accommodating the protective element 3 when mounted on the external circuit board 4. Heat can be transferred from the component 1 to the external circuit board 4, and the light-emitting element mounting component 1 having a small size and excellent heat dissipation can be obtained.

本実施形態の発光装置によれば、上記構成の上記構成の発光素子搭載用部品１と、発光素子搭載用部品１における配線12に搭載された発光素子２と、電極13の第１の部分131に
搭載された保護素子３とを備えていることによって、放熱性に優れているので、信頼性に優れた発光装置とすることができる。 According to the light emitting device of the present embodiment, the light emitting element mounting component 1 having the above structure, the light emitting element 2 mounted on the wiring 12 in the light emitting element mounting component 1, and the first portion 131 of the electrode 13. By providing the protective element 3 mounted on the light-emitting device, the light-emitting device can be made highly reliable because it has excellent heat dissipation.

（第２の実施形態）
次に、本発明の第２の実施形態による発光装置について、図４を参照しつつ説明する。 (Second Embodiment)
Next, a light emitting device according to a second embodiment of the present invention will be described with reference to FIG.

本発明の第２の実施形態における発光装置において、上記した第１の実施形態の発光装置と異なる点は、平面視で第２の部分132が第１の部分131を囲むように配置されている点である。   The light emitting device according to the second embodiment of the present invention differs from the light emitting device according to the first embodiment described above in that the second portion 132 surrounds the first portion 131 in plan view. Is a point.

第２の実施形態における発光素子搭載用部品１によれば、平面視で第２の部分132が第
１の部分131を囲むように配置されていることから、厚みが厚い第２の部分132がより広範囲に形成されたものとなり、より放熱性が向上されたものとなるため、発光素子２の熱から発光素子搭載用部品１に伝わった熱を電極13の第２の部分132を介して外部回路基板４
により良好に放熱することができる。 According to the light emitting element mounting component 1 in the second embodiment, since the second portion 132 is disposed so as to surround the first portion 131 in plan view, the thick second portion 132 is formed. Since it is formed in a wider range and heat dissipation is further improved, heat transferred from the light emitting element 2 to the light emitting element mounting component 1 is externally transmitted through the second portion 132 of the electrode 13. Circuit board 4
Therefore, it is possible to radiate heat better.

（第３の実施形態）
次に、本発明の第３の実施形態による発光装置について、図５〜図７を参照しつつ説明する。 (Third embodiment)
Next, a light emitting device according to a third embodiment of the invention will be described with reference to FIGS.

本発明の第３の実施形態における発光装置において、上記した第１の実施形態の発光装置と異なる点は、配線12の発光素子２が搭載される領域と電極13の第２の部分132とが絶
縁基体11を介して対向している点である。また、図５および図６に示す例においては、発光素子２は、フリップチップ実装により配線12に接続され、図７に示す例においては、ボンディングワイヤ等の接続部材５により配線12に接続され、発光素子搭載用部品１に搭載されている。 The light emitting device according to the third embodiment of the present invention differs from the light emitting device according to the first embodiment described above in that the region where the light emitting element 2 of the wiring 12 is mounted and the second portion 132 of the electrode 13 are different. It is a point facing through the insulating substrate 11. In the example shown in FIGS. 5 and 6, the light emitting element 2 is connected to the wiring 12 by flip chip mounting, and in the example shown in FIG. 7, it is connected to the wiring 12 by the connecting member 5 such as a bonding wire. It is mounted on the light emitting element mounting component 1.

第３の実施形態における発光素子搭載用部品１によれば、配線12の発光素子２が搭載される領域と電極13の第２の部分132とが絶縁基体11を介して対向していることから、発光
素子２の直下に電極13の厚みの厚い第２の部分132が形成されているので、発光素子２の
熱から発光素子搭載用部品１に伝わった熱を電極13の第２の部分132を介して外部回路基
板４に効果的に放熱することができる。 According to the light-emitting element mounting component 1 in the third embodiment, the region of the wiring 12 where the light-emitting element 2 is mounted and the second portion 132 of the electrode 13 are opposed to each other with the insulating base 11 interposed therebetween. Since the thick second portion 132 of the electrode 13 is formed immediately below the light emitting element 2, the heat transferred from the light emitting element 2 to the light emitting element mounting component 1 is transferred to the second portion 132 of the electrode 13. The heat can be effectively radiated to the external circuit board 4 via the.

また、図５〜図７に示される例のように、発光素子２および保護素子３は、発光素子搭載用部品１の外縁にそれぞれ偏らせて搭載していると、発光素子２を発光素子搭載用部品１の中央に搭載し、保護素子３を発光素子搭載用部品１の外縁に偏らせて、発光素子２の搭載領域の周りに保護素子３の搭載領域と同等の大きさが形成された場合と比較して、発光素子２の搭載領域と保護素子３の搭載領域以外の領域が必要以上に大きいものとならず、発光装置の小型化を図ることができる。なお、図５〜図７に示される例では、平面透視において、発光素子２と保護素子３とを対向する辺にそれぞれ偏らせて配置させているが、平面透視において発光素子２と保護素子３とを、発光素子搭載用部品１の対角位置に偏らせて搭載していると、発光素子２の直下の領域と保護素子３の搭載領域に挟まれる領域が電極13の厚みの厚い第２の部分132が広く形成されているものとなり、発光装置の放熱
性の向上を図ることができる。 Further, as in the example shown in FIGS. 5 to 7, when the light emitting element 2 and the protective element 3 are mounted on the outer edge of the light emitting element mounting component 1, the light emitting element 2 is mounted. Mounted in the center of the component 1 and the protective element 3 is biased toward the outer edge of the light-emitting element mounting component 1, and the same size as the protective element 3 mounting area is formed around the mounting area of the light-emitting element 2. Compared to the case, the area other than the mounting area of the light emitting element 2 and the mounting area of the protection element 3 is not larger than necessary, and the light emitting device can be downsized. In the example shown in FIGS. 5 to 7, the light emitting element 2 and the protective element 3 are arranged so as to be biased to the opposite sides in the planar perspective, but the light emitting element 2 and the protective element 3 in the planar perspective. Is biased to the diagonal position of the light-emitting element mounting component 1 and the region sandwiched between the region immediately below the light-emitting device 2 and the mounting region of the protection device 3 is a second electrode having a thick electrode 13. Thus, the portion 132 of the light emitting device is widely formed, and the heat dissipation of the light emitting device can be improved.

また、図５〜図７に示される例のように、発光素子２の搭載領域と、保護素子３の搭載領域とが平面透視にて重ならないようにしておくと、発光素子２または保護素子３の搭載領域の直下、および接続部材５のボンディング領域の直下に、各配線12、各電極13の間および電極13の第１の部分131上に形成される空間が配置されていないため、発光素子２お
よび保護素子３を電子部品搭載用部品１に搭載する場合に、絶縁基体11が撓みにくいものとなり、発光素子２および保護素子３の実装信頼性が向上されたものとなる。 Further, as in the example shown in FIG. 5 to FIG. 7, if the mounting area of the light emitting element 2 and the mounting area of the protection element 3 do not overlap with each other in a plan view, the light emitting element 2 or the protection element 3. Since the space formed between each wiring 12 and each electrode 13 and on the first portion 131 of the electrode 13 is not arranged immediately below the mounting region of the wiring member and directly below the bonding region of the connection member 5, the light emitting element 2 and the protective element 3 are mounted on the electronic component mounting component 1, the insulating base 11 is difficult to bend, and the mounting reliability of the light emitting element 2 and the protective element 3 is improved.

また、図７に示される例のように、電極13の第２の部分132の厚みを厚くして、搭載さ
れる保護素子３が電極13の第２の部分132より突出しないようにすると発光装置の取り扱
い時に外力からの応力が保護素子３にかかりにくいものとなり、発光装置の信頼性が向上するものとなり、好ましい。 Further, as in the example shown in FIG. 7, when the thickness of the second portion 132 of the electrode 13 is increased so that the protection element 3 to be mounted does not protrude from the second portion 132 of the electrode 13, the light emitting device. It is preferable that stress from an external force is not easily applied to the protective element 3 during handling, and the reliability of the light emitting device is improved.

また、図６および図７に示される例のように、発光素子２が搭載される配線12を、電極13の第２の部分132と同様に、例えば、30〜150μｍ程度に厚く形成しても構わない。このような配線12は、電極13の第２の部分132と同様な方法により製作することができる。こ
れにより、発光素子２の熱を発光素子２から発光素子搭載用部品１に良好に放熱することができるので、信頼性に優れた発光装置とすることができる。また、配線12は、例えば、電極13と同様に熱伝導率の高い銅等を、10〜130μｍ程度に厚く介在して形成していると
、発光素子２から発光素子搭載用部品１への放熱性を良好なものとすることができる。 Further, as in the example shown in FIGS. 6 and 7, the wiring 12 on which the light emitting element 2 is mounted may be formed to a thickness of about 30 to 150 μm, for example, like the second portion 132 of the electrode 13. I do not care. Such a wiring 12 can be manufactured by the same method as the second portion 132 of the electrode 13. Thereby, since the heat of the light emitting element 2 can be radiated favorably from the light emitting element 2 to the light emitting element mounting component 1, a light emitting device with excellent reliability can be obtained. Further, if the wiring 12 is formed with, for example, copper having a high thermal conductivity as thick as about 10 to 130 μm as in the case of the electrode 13, heat dissipation from the light emitting element 2 to the light emitting element mounting component 1. The property can be improved.

（第４の実施形態）
次に、本発明の第４の実施形態による発光装置について、図８を参照しつつ説明する。 (Fourth embodiment)
Next, a light emitting device according to a fourth embodiment of the present invention will be described with reference to FIG.

本発明の第４の実施形態における発光装置において、上記した実施形態の発光装置と異なる点は、図８に示された例のように、絶縁基体11の上面に形成された発光素子搭載層15上に発光素子２が搭載されている点である。また、発光素子搭載層15は配線12よりも厚みが厚くなっている。   The light emitting device according to the fourth embodiment of the present invention differs from the light emitting device according to the above embodiment in that the light emitting element mounting layer 15 formed on the upper surface of the insulating substrate 11 as in the example shown in FIG. The light emitting element 2 is mounted on the top. The light emitting element mounting layer 15 is thicker than the wiring 12.

第４の実施形態における発光素子搭載用部品１によれば、発光素子搭載層15の厚みを厚くすることにより、発光素子２から発光素子搭載用部品１への放熱性を高めることができるとともに、配線12と発光素子搭載層15との間隔を小さくし、発光素子２を封止材６により覆う際に、発光素子搭載層15の側面が配線12より高い位置となるため、封止材６が発光素子搭載層15の側面に対し濡れやすいものとなり、配線12と発光素子搭載層15との間に封止材６を良好に流入させることができる。   According to the light-emitting element mounting component 1 in the fourth embodiment, by increasing the thickness of the light-emitting element mounting layer 15, heat dissipation from the light-emitting element 2 to the light-emitting element mounting component 1 can be improved. When the distance between the wiring 12 and the light emitting element mounting layer 15 is reduced and the light emitting element 2 is covered with the sealing material 6, the side surface of the light emitting element mounting layer 15 is positioned higher than the wiring 12. It becomes easy to get wet with respect to the side surface of the light emitting element mounting layer 15, and the sealing material 6 can be satisfactorily flown between the wiring 12 and the light emitting element mounting layer 15.

このような発光素子搭載層15は、配線12または電極13と同様の材料および方法により製作することができる。   Such a light emitting element mounting layer 15 can be manufactured by the same material and method as the wiring 12 or the electrode 13.

本発明は、上述の実施の形態の例に限定されるものではなく、種々の変更は可能である。上述に示す例では、電極13は、絶縁基体11の下面のみに形成しているが、例えば、絶縁基体11の下面から側面にかけて形成しても構わない。例えば、絶縁基体11の側面に溝が設けられており、溝の内面に導体の被着された、いわゆるキャスタレーション導体を有していてもよい。   The present invention is not limited to the above-described embodiments, and various modifications can be made. In the example described above, the electrode 13 is formed only on the lower surface of the insulating substrate 11, but may be formed from the lower surface to the side surface of the insulating substrate 11, for example. For example, a groove may be provided on the side surface of the insulating base 11, and a so-called castellation conductor having a conductor attached to the inner surface of the groove may be provided.

また、図１〜図８に示される例では、保護素子３が搭載される電極13の第１の部分13の大きさを対向する電極13同士で同じとしているが、異ならせても構わない。   Moreover, in the example shown by FIGS. 1-8, although the magnitude | size of the 1st part 13 of the electrode 13 in which the protection element 3 is mounted is made the same in the electrodes 13 which oppose, you may make it different.

また、発光素子搭載用部品１は、上面に、発光素子２が収納されるキャビティを含んでいても構わないし、複数の発光素子２および保護素子３が搭載されるものであっても構わない。   Moreover, the light emitting element mounting component 1 may include a cavity in which the light emitting element 2 is accommodated on the upper surface, or a plurality of light emitting elements 2 and protection elements 3 may be mounted thereon.

また、発光素子搭載用部品１は、絶縁基体11の内部に、絶縁基体11よりも放熱性の優れた金属部材を平面視で複数の発光素子２が搭載される領域と重なる領域に埋設させた配線基板１であってもよい。   In the light-emitting element mounting component 1, a metal member having better heat dissipation than the insulating base 11 is embedded in the insulating base 11 in a region overlapping a region where the plurality of light-emitting elements 2 are mounted in a plan view. The wiring board 1 may be used.

また、発光素子搭載用部品１は多数個取り配線基板の形態で製作されていてもよい。   The light emitting element mounting component 1 may be manufactured in the form of a multi-piece wiring board.

また、発光素子搭載用部品１の下面に搭載された保護素子３の全体または周囲を、樹脂等の封止材により被覆し、発光装置を外部回路基板４に接合する際に、半田等の接合材が保護素子３が搭載された第１の部分131に流入することを抑制することができる。   Further, when the entire protective element 3 mounted on the lower surface of the light emitting element mounting component 1 or the periphery thereof is covered with a sealing material such as resin, and the light emitting device is bonded to the external circuit board 4, bonding such as solder is performed. It is possible to prevent the material from flowing into the first portion 131 on which the protection element 3 is mounted.

１・・・・発光素子搭載用部品
11・・・・絶縁基体
12・・・・配線
13・・・・電極
131 ・・・第１の部分
132 ・・・第２の部分
14・・・・配線導体
２・・・・発光素子
３・・・・保護素子
４・・・・外部回路基板
５・・・・接続部材
６・・・・封止材 1. Light emitting element mounting parts
11 ... Insulating substrate
12 ... Wiring
13 ... Electrodes
131 ・ ・ ・ first part
132 ・ ・ ・ Second part
14 ... Wiring conductor 2 ... Light emitting element 3 ... Protection element 4 ... External circuit board 5 ... Connection member 6 ... Sealing material

Claims (4)

絶縁基体と、
該絶縁基体の上面に形成され、発光素子が搭載される配線と、
前記絶縁基体の下面に形成された電極とを備えており、
該電極は、保護素子が搭載される第１の部分と外部回路基板に接続される第２の部分とを有し、
前記第２の部分の厚みが前記第１の部分の厚みよりも厚いことを特徴とする発光素子搭載用部品。 An insulating substrate;
A wiring formed on the upper surface of the insulating substrate and mounted with a light emitting element;
An electrode formed on the lower surface of the insulating base,
The electrode has a first part on which the protection element is mounted and a second part connected to the external circuit board,
A component for mounting a light emitting element, wherein the thickness of the second portion is larger than the thickness of the first portion. 平面視で前記第２の部分が前記第１の部分を囲むように配置されていることを特徴とする請求項１に記載の発光素子搭載用部品。   The light-emitting element mounting component according to claim 1, wherein the second portion is disposed so as to surround the first portion in a plan view. 前記配線の前記発光素子が搭載される領域と前記電極の第２の部分とが前記絶縁基体を介して対向していることを特徴とする請求項１に記載の発光素子搭載用部品。   2. The light-emitting element mounting component according to claim 1, wherein a region of the wiring on which the light-emitting element is mounted and the second portion of the electrode are opposed to each other with the insulating base interposed therebetween. 請求項１に記載の発光素子搭載用部品と、
該発光素子搭載用部品における前記配線に搭載された発光素子と、
前記電極の前記第１の部分に搭載された保護素子とを備えていることを特徴とする発光装置。 The light-emitting element mounting component according to claim 1;
A light emitting element mounted on the wiring in the light emitting element mounting component;
A light emitting device comprising: a protective element mounted on the first portion of the electrode.
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