JP2015035469A - Solid-state laser device - Google Patents

Solid-state laser device Download PDF

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JP2015035469A
JP2015035469A JP2013164966A JP2013164966A JP2015035469A JP 2015035469 A JP2015035469 A JP 2015035469A JP 2013164966 A JP2013164966 A JP 2013164966A JP 2013164966 A JP2013164966 A JP 2013164966A JP 2015035469 A JP2015035469 A JP 2015035469A
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temperature
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state laser
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JP6273716B2 (en
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直也 石垣
Naoya Ishigaki
直也 石垣
東條　公資
Kimitada Tojo
公資 東條
次郎 齊川
Jiro Saikawa
次郎 齊川
進吾 宇野
Shingo Uno
進吾 宇野
廣木　知之
Tomoyuki Hiroki
知之 廣木
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Shimadzu Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a solid-state laser device capable of preventing damage to an optical element in a resonator.SOLUTION: A solid-state laser device comprises: a semiconductor laser 1 which generates a laser beam; a solid-state laser medium 2 excited by the laser beam output from the semiconductor laser 1; an SHG element 4 and a THG element 5 arranged in the resonator including the solid-state laser medium 2, and for outputting a third harmonic wave of a fundamental wave generated in the resonator; a temperature adjusting mechanism 10 which controls a temperature of each of the SHG element 4 and the THG element 5; and a photodetector 7, which is arranged outside the resonator, detects a fundamental wave output to the outside of the resonator. The temperature adjusting mechanism 10 adjusts a temperature of a crystal 4 for generating a second harmonic wave so that an output value of the fundamental wave detected by the photodetector 7 becomes a prescribed value or lower.

Description

本発明は、固体レーザ装置に関し、特に、第３高調波を出力する固体レーザ装置に関する。   The present invention relates to a solid-state laser device, and more particularly to a solid-state laser device that outputs a third harmonic.

従来より、第３高調波のパルス出力のピーク強度を安定化できる固体レーザ装置が知られている（特許文献１）。この特許文献１に記載され且つ第３高調波を出力する固体レーザ装置は、基本波を第２高調波に変換するための第２高調波発生用結晶（以下、ＳＨＧ素子と称する）と、基本波と第２高調波の和周波により第３高調波を出力する第３高調波発生用結晶（以下、ＴＨＧ素子と称する）とを備えている。   Conventionally, a solid-state laser device capable of stabilizing the peak intensity of the third harmonic pulse output is known (Patent Document 1). A solid-state laser device described in Patent Document 1 and outputting a third harmonic includes a second harmonic generation crystal (hereinafter referred to as an SHG element) for converting a fundamental wave into a second harmonic, A third harmonic generation crystal (hereinafter referred to as a THG element) that outputs a third harmonic by the sum frequency of the wave and the second harmonic.

各波長変換素子としてのＳＨＧ素子及びＴＨＧ素子の温度をスイープさせ、一定のエネルギーを保つ状態で、半導体レーザの駆動電流が最小となるように各波長変換素子の温度を設定している。波長変換素子の温度は、第３高調波の出力が最大、即ち光学素子の変換効率が最大になるように予め設定されている。   The temperature of each SHG element and THG element as each wavelength conversion element is swept, and the temperature of each wavelength conversion element is set so that the drive current of the semiconductor laser is minimized while maintaining constant energy. The temperature of the wavelength conversion element is set in advance so that the output of the third harmonic is maximized, that is, the conversion efficiency of the optical element is maximized.

また、特許文献２には、レーザ共振器外において、出力ミラーから漏れてくる基本波の縦モードをモニターしながらその信号をフィードバックして、出力ミラーの位置を圧電素子等により制御することで、共振器長の調整を行い、エタロンの透過ピークとレーザ発振波長を同調していた。   Further, in Patent Document 2, by feeding back the signal while monitoring the longitudinal mode of the fundamental wave leaking from the output mirror outside the laser resonator, the position of the output mirror is controlled by a piezoelectric element or the like, The cavity length was adjusted to tune the transmission peak of the etalon and the laser oscillation wavelength.

特開２０１０−２５１４４８号公報JP 2010-251448 A 特開２００３−１６３４００号公報JP 2003-163400 A

しかしながら、特許文献１では、環境温度や経時変化などにより第３高調波の出力が最大となる波長変換素子の最適温度が変化する可能性がある。このため、波長変換素子の温度をスイープさせて、波長変換素子に対する最適温度を割り出すための温度チューニングを行う。しかし、ＳＨＧ素子やＴＨＧ素子の変換効率が低下している場合には、共振器内で波長が基本波から高調波に変換されず、残存する基本波のパワーが増加する。このため、共振器を構成している光学素子のコーティング損傷が生じてしまう。   However, in Patent Document 1, there is a possibility that the optimum temperature of the wavelength conversion element that maximizes the output of the third harmonic may change due to the environmental temperature, changes with time, and the like. Therefore, the temperature of the wavelength conversion element is swept to perform temperature tuning for determining the optimum temperature for the wavelength conversion element. However, when the conversion efficiency of the SHG element or THG element is lowered, the wavelength is not converted from the fundamental wave to the harmonic wave in the resonator, and the power of the remaining fundamental wave increases. For this reason, the coating damage of the optical element which comprises the resonator will arise.

また、特許文献２の技術を用いても、共振器を構成している光学素子のコーティング損傷が生じるという課題を解決することができなかった。   Moreover, even if the technique of Patent Document 2 is used, the problem that the coating damage of the optical element constituting the resonator occurs cannot be solved.

本発明の課題は、共振器内の光学素子の損傷を防止することができる固体レーザ装置を提供することにある。   An object of the present invention is to provide a solid-state laser device capable of preventing damage to an optical element in a resonator.

上記の課題を解決するために、本発明に係る固体レーザ装置は、レーザ光を発生する半導体レーザと、前記半導体レーザから出力されるレーザ光により励起される固体レーザ媒質と、前記固体レーザ媒質を含む共振器内に配置され、前記共振器内で発生する基本波の第３高調波を出力するための第２高調波発生用結晶および第３高調波発生用結晶と、前記第２高調波発生用結晶および前記第３高調波発生用結晶の各々の温度を制御する温度調整機構と、共振器外に配置され、前記共振器外に出力される基本波を検出する光検出器とを備え、前記温度調整機構は、前記光検出器で検出された基本波の出力値が所定値以下となるように前記第２高調波発生用結晶の温度を調整することを特徴とする。   In order to solve the above problems, a solid-state laser device according to the present invention includes a semiconductor laser that generates laser light, a solid-state laser medium that is excited by laser light output from the semiconductor laser, and the solid-state laser medium. A second harmonic generation crystal and a third harmonic generation crystal disposed in a resonator including the second harmonic generation crystal for outputting a third harmonic of a fundamental wave generated in the resonator, and the second harmonic generation A temperature adjusting mechanism that controls the temperature of each of the crystal for crystal generation and the third harmonic generation crystal, and a photodetector that is disposed outside the resonator and detects a fundamental wave output to the outside of the resonator, The temperature adjustment mechanism adjusts the temperature of the second harmonic generation crystal so that the output value of the fundamental wave detected by the photodetector is not more than a predetermined value.

また、前記温度調整機構は、前記光検出器で検出された基本波の出力値が所定値以下となるように前記第３高調波発生用結晶の温度を調整することを特徴とする。   In addition, the temperature adjustment mechanism adjusts the temperature of the third harmonic generation crystal so that the output value of the fundamental wave detected by the photodetector is not more than a predetermined value.

また、前記光検出器で検出された基本波の出力値が一定値を超えないように、前記半導体レーザを駆動する駆動電流の電流値を制御することを特徴とする。   The current value of the drive current for driving the semiconductor laser is controlled so that the output value of the fundamental wave detected by the photodetector does not exceed a certain value.

本発明に係る固体レーザ装置によれば、温度調整機構は、光検出器で検出された基本波の出力値が所定値以下となるように第２高調波発生用結晶の温度を調整するので、共振器内で波長が基本波から高調波に変換され、残存する基本波のパワーが減少して、共振器内の光学素子の損傷を防止することができる。   According to the solid-state laser device of the present invention, the temperature adjustment mechanism adjusts the temperature of the second harmonic generation crystal so that the output value of the fundamental wave detected by the photodetector is not more than a predetermined value. In the resonator, the wavelength is converted from the fundamental wave to the harmonic, and the power of the remaining fundamental wave is reduced, so that damage to the optical element in the resonator can be prevented.

本発明の実施例１に係る固体レーザ装置の構成を示すブロック図である。It is a block diagram which shows the structure of the solid-state laser apparatus which concerns on Example 1 of this invention. 本発明の実施例１に係る固体レーザ装置内のＳＨＧ素子の共振器内での温度パワー特性及び温度チューニングを示す図である。It is a figure which shows the temperature power characteristic and temperature tuning in the resonator of the SHG element in the solid-state laser apparatus concerning Example 1 of this invention. 本発明の実施例１に係る固体レーザ装置内のＴＨＧ素子の共振器内での温度パワー特性及び温度チューニングを示す図である。It is a figure which shows the temperature power characteristic and temperature tuning in the resonator of the THG element in the solid-state laser apparatus which concerns on Example 1 of this invention. 本発明の実施例２に係る固体レーザ装置の構成を示すブロック図である。It is a block diagram which shows the structure of the solid-state laser apparatus which concerns on Example 2 of this invention.

以下、本発明の固体レーザ装置の実施の形態について、図面を参照しながら詳細に説明する。   Hereinafter, embodiments of the solid-state laser device of the present invention will be described in detail with reference to the drawings.

図１は、本発明の実施例１に係る固体レーザ装置の構成を示すブロック図である。この固体レーザ装置は、半導体レーザ１、固体レーザ媒質２、入射ミラー３、ＳＨＧ素子４、ペルチェ素子４ａ、ＴＨＧ素子５、ペルチェ素子５ａ、ビームスプリッタ６、光検出器７、読出回路８、温度調整機構１０を有するＣＰＵ（中央処理装置）９、出射ミラー１１を備えている。   FIG. 1 is a block diagram showing a configuration of a solid-state laser apparatus according to Embodiment 1 of the present invention. This solid-state laser device includes a semiconductor laser 1, a solid-state laser medium 2, an incident mirror 3, an SHG element 4, a Peltier element 4a, a THG element 5, a Peltier element 5a, a beam splitter 6, a photodetector 7, a readout circuit 8, and temperature adjustment. A CPU (central processing unit) 9 having a mechanism 10 and an exit mirror 11 are provided.

なお、固体レーザ媒質２、２つのミラー３，１１、ＳＨＧ素子４、ＴＨＧ素子５から構成される部分を共振器２０と呼ぶ。   A portion composed of the solid-state laser medium 2, the two mirrors 3, 11, the SHG element 4, and the THG element 5 is called a resonator 20.

半導体レーザ１は、例えばレーザダイオードによって構成されており、レーザ光を発生する。半導体レーザ１で発生されたレーザ光は、入射ミラー３を透過して固体レーザ媒質２に照射される。   The semiconductor laser 1 is constituted by a laser diode, for example, and generates laser light. Laser light generated by the semiconductor laser 1 passes through the incident mirror 3 and is irradiated onto the solid-state laser medium 2.

固体レーザ媒質２は、レーザ発振の元となる物質であり、例えば、ＹＡＧレーザと呼ばれる固体レーザにおいては、イットリウム、アルミニウムおよびガーネット（Yttrium Aluminum Garnet）などといった物質が用いられる。この固体レーザ媒質２は、半導体レーザ１からレーザ光が照射されることにより励起されて誘導放出光を発生する。この固体レーザ媒質２で発生された誘導放出光は、ＳＨＧ素子４に送られる。   The solid-state laser medium 2 is a material that causes laser oscillation. For example, in a solid-state laser called a YAG laser, materials such as yttrium, aluminum, and garnet (Yttrium Aluminum Garnet) are used. The solid-state laser medium 2 is excited by being irradiated with laser light from the semiconductor laser 1 to generate stimulated emission light. The stimulated emission light generated by the solid-state laser medium 2 is sent to the SHG element 4.

ＳＨＧ素子４は、第２高調波発生用結晶からなるＬＢＯ（type1）であり、固体レーザ媒質２からの基本波から第２高調波を発生する。ＴＨＧ素子５は、第３高調波発生用結晶からなるＬＢＯ（type2）であり、基本波およびＳＨＧ素子４で発生した第２高調波から第３高調波を発生し、出射ミラー１１を通してビームスプリッタ６に導く。   The SHG element 4 is an LBO (type 1) made of a second harmonic generation crystal, and generates a second harmonic from the fundamental wave from the solid-state laser medium 2. The THG element 5 is an LBO (type 2) made of a third harmonic generation crystal, generates a third harmonic from the fundamental wave and the second harmonic generated by the SHG element 4, and passes through the output mirror 11 to the beam splitter 6. Lead to.

出射ミラー１１には、基本波と第２高調波とを反射し且つ第３高調波を透過するコーティングが施されている。このコーティングの基本波反射率は、９９．９％であり、約０．１％の基本波は共振器外に透過するように設計されている。   The exit mirror 11 is provided with a coating that reflects the fundamental wave and the second harmonic wave and transmits the third harmonic wave. The fundamental wave reflectance of this coating is 99.9%, and about 0.1% of the fundamental wave is designed to be transmitted outside the resonator.

ビームスプリッタ６は、共振器外に配置され、出射ミラー１１からの第３高調波を透過してパルスレーザとして出力し、出射ミラー１１からの基本波を反射して光検出器７に導く。   The beam splitter 6 is arranged outside the resonator, transmits the third harmonic from the output mirror 11 and outputs it as a pulse laser, reflects the fundamental wave from the output mirror 11 and guides it to the photodetector 7.

光検出器７は、フォトダイオードなどからなり、ビームスプリッタ６からの基本波のパワーを検出する。読出回路８は、光検出器７で検出された基本波のパワーを読み出して、基本波のパワーを温度調整機構１０に出力する。   The photodetector 7 is composed of a photodiode or the like, and detects the power of the fundamental wave from the beam splitter 6. The reading circuit 8 reads the fundamental wave power detected by the photodetector 7 and outputs the fundamental wave power to the temperature adjustment mechanism 10.

温度調整機構１０は、ペルチェ素子４ａ，５ａによりＳＨＧ素子４及びＴＨＧ素子５の各々の温度を制御する。また、温度調整機構１０は、読出回路８からの基本波のパワーに基づき基本波のパワーが所定値以下となるようにＳＨＧ素子４の温度チューニング（温度調整）を行う。   The temperature adjustment mechanism 10 controls the temperature of each of the SHG element 4 and the THG element 5 by the Peltier elements 4a and 5a. Further, the temperature adjustment mechanism 10 performs temperature tuning (temperature adjustment) of the SHG element 4 based on the fundamental wave power from the readout circuit 8 so that the fundamental wave power becomes a predetermined value or less.

また、温度調整機構１０は、ＳＨＧ素子４の温度チューニングを行った後に、光検出器７で検出された基本波の出力値が所定値以下となるようにＴＨＧ素子５の温度チューニングを行う。   Further, the temperature adjustment mechanism 10 performs temperature tuning of the THG element 5 so that the output value of the fundamental wave detected by the photodetector 7 is equal to or less than a predetermined value after performing temperature tuning of the SHG element 4.

次に、上記のように構成される本発明の実施例１に係る固体レーザ装置の動作を説明する。   Next, the operation of the solid-state laser device according to the first embodiment of the present invention configured as described above will be described.

まず、波長変換素子の温度は、第３高調波の出力が最大になるように予め設定されているが、環境温度や経時変化などにより波長変換素子の最適温度が変化する。このとき、ＳＨＧ素子４やＴＨＧ素子５の変換効率が低下し、共振器内で波長が基本波から高調波に変換されず、残存する基本波のパワーが増加する。   First, the temperature of the wavelength conversion element is set in advance so that the output of the third harmonic is maximized. However, the optimum temperature of the wavelength conversion element changes depending on the environmental temperature, changes with time, and the like. At this time, the conversion efficiency of the SHG element 4 and the THG element 5 decreases, the wavelength is not converted from the fundamental wave to the harmonic wave in the resonator, and the power of the remaining fundamental wave increases.

共振器外に配置した光検出器７は、増加された基本波のパワーを検出し、読出回路８は、光検出器７で検出された基本波のパワーを読み出して、基本波のパワーを温度調整機構１０に出力する。   The photodetector 7 arranged outside the resonator detects the increased fundamental wave power, and the readout circuit 8 reads the fundamental wave power detected by the photodetector 7 and converts the fundamental wave power to the temperature. Output to the adjustment mechanism 10.

温度調整機構１０は、読出回路８からの基本波のパワーに基づき基本波のパワーが所定値以下となるようにＳＨＧ素子４の温度チューニングを行う。ＳＨＧ素子４の共振器内での温度パワー特性は、図２に示すように、例えば３５℃から４５℃までの温度範囲が平坦特性であるが、この温度範囲外の温度では急激にパワーが低下している。   The temperature adjustment mechanism 10 performs temperature tuning of the SHG element 4 based on the fundamental wave power from the readout circuit 8 so that the fundamental wave power becomes a predetermined value or less. As shown in FIG. 2, the temperature power characteristic in the resonator of the SHG element 4 is a flat characteristic in a temperature range from 35 ° C. to 45 ° C., for example, but the power sharply decreases at a temperature outside this temperature range. doing.

経時変化によりＳＨＧ素子４の温度パワー特性が変化した場合、例えば、温度パワー特性が矢印の方向（右方向）にシフトした場合には、同じ温度例えば３５℃では、パワーが低下する。このため、高調波に変換されなかった残存する基本波が共振器外に出ることから、読出回路８からの基本波のパワーを所定値以下となるようにＳＨＧ素子４の温度を上昇させる温度チューニングを行う。   When the temperature power characteristic of the SHG element 4 changes with time, for example, when the temperature power characteristic shifts in the direction of the arrow (rightward), the power decreases at the same temperature, for example, 35 ° C. For this reason, since the remaining fundamental wave that has not been converted into the harmonic wave goes out of the resonator, the temperature tuning is performed to increase the temperature of the SHG element 4 so that the fundamental wave power from the readout circuit 8 becomes a predetermined value or less. I do.

この温度チューニングにより、例えば、４０℃でのＳＨＧ素子４の共振器内でのパワーが上昇し、例えば、４０℃〜５０℃の温度範囲を平坦特性にすることができる。従って、共振器内で波長が基本波から高調波に変換され、残存する基本波のパワーが減少して、共振器内の光学素子の損傷を防止することができる。   By this temperature tuning, for example, the power in the resonator of the SHG element 4 at 40 ° C. increases, and for example, a temperature range of 40 ° C. to 50 ° C. can be made flat. Accordingly, the wavelength is converted from the fundamental wave to the harmonic wave in the resonator, and the power of the remaining fundamental wave is reduced, so that damage to the optical element in the resonator can be prevented.

また、読出回路８からの基本波のパワーがさらに増加した場合には、温度調整機構１０は、読出回路８からの基本波のパワーに基づき基本波のパワーが所定値以下となるようにＴＨＧ素子５の温度チューニングを行う。   When the fundamental wave power from the readout circuit 8 further increases, the temperature adjustment mechanism 10 causes the THG element to reduce the fundamental wave power to a predetermined value or less based on the fundamental wave power from the readout circuit 8. Perform 5 temperature tuning.

ＴＨＧ素子５の温度パワー特性は、図３に示すように、例えば、４０℃を中心とする単峰特性であり、４０℃から離れると急激にパワーが低下している。   As shown in FIG. 3, the temperature power characteristic of the THG element 5 is, for example, a single-peak characteristic centered on 40 ° C., and the power sharply decreases when moving away from 40 ° C.

経時変化によりＴＨＧ素子５の温度パワー特性が変化した場合、例えば、温度パワー特性が矢印の方向（左方向）にシフトした場合には、同じ温度例えば４０℃では、パワーが低下する。このため、高調波に変換されなかった残存する基本波が共振器外に出ることから、読出回路８からの基本波のパワーを所定値以下となるようにＴＨＧ素子５の温度を上昇させる温度チューニングを行う。   When the temperature power characteristic of the THG element 5 changes with time, for example, when the temperature power characteristic shifts in the direction of the arrow (left direction), the power decreases at the same temperature, for example, 40 ° C. For this reason, since the remaining fundamental wave that has not been converted into the harmonic wave goes out of the resonator, the temperature tuning is performed to raise the temperature of the THG element 5 so that the fundamental wave power from the readout circuit 8 becomes a predetermined value or less. I do.

この温度チューニングにより、例えば、３５℃でのＴＨＧ素子５の共振器内でのパワーが上昇し、例えば、３５℃で単峰特性とすることができる。従って、共振器内で波長が基本波から高調波に変換され、残存する基本波のパワーが減少して、共振器内の光学素子の損傷を防止することができる。   By this temperature tuning, for example, the power in the resonator of the THG element 5 at 35 ° C. increases, and for example, a single peak characteristic can be obtained at 35 ° C. Accordingly, the wavelength is converted from the fundamental wave to the harmonic wave in the resonator, and the power of the remaining fundamental wave is reduced, so that damage to the optical element in the resonator can be prevented.

（第２の実施形態）
図４は、本発明の実施例２に係る固体レーザ装置の構成を示すブロック図である。図４に示す実施例２に係る固体レーザ装置は、図１に示す実施例１に係る固体レーザ装置に対して、さらに、光検出器７で検出された基本波の出力値に基づき半導体レーザ１の駆動電流を制御するＬＤ駆動回路１２を設けたことを特徴とする。 (Second Embodiment)
FIG. 4 is a block diagram showing the configuration of the solid-state laser apparatus according to Embodiment 2 of the present invention. The solid-state laser device according to the second embodiment shown in FIG. 4 is further different from the solid-state laser device according to the first embodiment shown in FIG. An LD driving circuit 12 for controlling the driving current is provided.

このように構成された実施例２の固体レーザ装置によれば、ＳＨＧ素子４による温度チューニングを行っても、光検出器７で検出された基本波の出力値がさらに増加した場合には、ＬＤ駆動回路１２は、読出回路８からの基本波のパワーが一定値を超えないように半導体レーザ１の駆動電流を減少させる。   According to the solid-state laser device of Example 2 configured in this way, even if the temperature tuning by the SHG element 4 is performed, if the output value of the fundamental wave detected by the photodetector 7 further increases, the LD The drive circuit 12 reduces the drive current of the semiconductor laser 1 so that the power of the fundamental wave from the readout circuit 8 does not exceed a certain value.

そして、ＳＨＧ素子４による温度チューニングとＴＨＧ素子５による温度チューニングとを行う。ＳＨＧ素子４の温度とＴＨＧ素子５の温度とが最適温度になった後に、半導体レーザ１の駆動電流を元の電流値に戻し、温度チューニングを完了する。   Then, temperature tuning by the SHG element 4 and temperature tuning by the THG element 5 are performed. After the temperature of the SHG element 4 and the temperature of the THG element 5 reach the optimum temperature, the drive current of the semiconductor laser 1 is returned to the original current value, and the temperature tuning is completed.

即ち、読出回路８からの基本波のパワーが一定値を超えないように駆動電流の値を制御しながら、ＳＨＧ素子４とＴＨＧ素子５との温度チューニングを行うので、共振器内の光学素子の損傷を防止することができる。   That is, the temperature tuning of the SHG element 4 and the THG element 5 is performed while controlling the value of the drive current so that the power of the fundamental wave from the readout circuit 8 does not exceed a certain value. Damage can be prevented.

なお、本発明は前述した実施例１及び実施例２の固体レーザ装置に限定されるものではない。   In addition, this invention is not limited to the solid-state laser apparatus of Example 1 and Example 2 mentioned above.

本発明は、固体パルスレーザ装置に利用できる。   The present invention can be used for a solid-state pulse laser device.

１ 半導体レーザ
２ 固体レーザ媒質
３ 入射ミラー
４ ＳＨＧ素子
４ａ，５ａ ペルチェ素子
５ ＴＨＧ素子
６ ビームスプリッタ
７ 光検出器
８ 読出回路
９ ＣＰＵ
１０ 温度調整機構
１１ 出射ミラー
１２ ＬＤ駆動回路
２０ 共振器
１００ 固体レーザ装置 DESCRIPTION OF SYMBOLS 1 Semiconductor laser 2 Solid state laser medium 3 Incident mirror 4 SHG element 4a, 5a Peltier element 5 THG element 6 Beam splitter 7 Photodetector 8 Reading circuit 9 CPU
DESCRIPTION OF SYMBOLS 10 Temperature adjustment mechanism 11 Output mirror 12 LD drive circuit
20 Resonator 100 Solid-state laser device

Claims (3)

レーザ光を発生する半導体レーザと、
前記半導体レーザから出力されるレーザ光により励起される固体レーザ媒質と、
前記固体レーザ媒質を含む共振器内に配置され、前記共振器内で発生する基本波の第３高調波を出力するための第２高調波発生用結晶および第３高調波発生用結晶と、
前記第２高調波発生用結晶および前記第３高調波発生用結晶の各々の温度を制御する温度調整機構と、
共振器外に配置され、前記共振器外に出力される基本波を検出する光検出器とを備え、
前記温度調整機構は、前記光検出器で検出された基本波の出力値が所定値以下となるように前記第２高調波発生用結晶の温度を調整することを特徴とする固体レーザ装置。 A semiconductor laser for generating laser light;
A solid-state laser medium excited by laser light output from the semiconductor laser;
A second harmonic generation crystal and a third harmonic generation crystal disposed in a resonator including the solid-state laser medium and outputting a third harmonic of a fundamental wave generated in the resonator;
A temperature adjustment mechanism for controlling the temperature of each of the second harmonic generation crystal and the third harmonic generation crystal;
A photodetector that is disposed outside the resonator and detects a fundamental wave that is output outside the resonator;
The temperature adjustment mechanism adjusts the temperature of the second harmonic generation crystal so that an output value of a fundamental wave detected by the photodetector is not more than a predetermined value. 前記温度調整機構は、前記光検出器で検出された基本波の出力値が所定値以下となるように前記第３高調波発生用結晶の温度を調整することを特徴とする請求項１記載の固体レーザ装置。   The temperature adjusting mechanism adjusts the temperature of the third harmonic generation crystal so that an output value of a fundamental wave detected by the photodetector is equal to or lower than a predetermined value. Solid state laser device. 前記光検出器で検出された基本波の出力値が一定値を超えないように、前記半導体レーザを駆動する駆動電流の電流値を制御することを特徴とする請求項１又は請求項２記載の固体レーザ装置。   The current value of the drive current for driving the semiconductor laser is controlled so that the output value of the fundamental wave detected by the photodetector does not exceed a certain value. Solid state laser device.
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