JP2015014546A5 - - Google Patents

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Publication number
JP2015014546A5
JP2015014546A5 JP2013142164A JP2013142164A JP2015014546A5 JP 2015014546 A5 JP2015014546 A5 JP 2015014546A5 JP 2013142164 A JP2013142164 A JP 2013142164A JP 2013142164 A JP2013142164 A JP 2013142164A JP 2015014546 A5 JP2015014546 A5 JP 2015014546A5
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JP
Japan
Prior art keywords
raman scattering
enhanced raman
scattering element
element according
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2013142164A
Other languages
English (en)
Japanese (ja)
Other versions
JP6023669B2 (ja
JP2015014546A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2013142164A external-priority patent/JP6023669B2/ja
Priority to JP2013142164A priority Critical patent/JP6023669B2/ja
Priority to US14/420,502 priority patent/US9863883B2/en
Priority to CN201380040860.1A priority patent/CN104508466B/zh
Priority to EP13828081.3A priority patent/EP2884265A4/en
Priority to TW102128717A priority patent/TWI604186B/zh
Priority to PCT/JP2013/071704 priority patent/WO2014025035A1/ja
Publication of JP2015014546A publication Critical patent/JP2015014546A/ja
Publication of JP2015014546A5 publication Critical patent/JP2015014546A5/ja
Publication of JP6023669B2 publication Critical patent/JP6023669B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013142164A 2012-08-10 2013-07-05 表面増強ラマン散乱素子 Active JP6023669B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013142164A JP6023669B2 (ja) 2013-07-05 2013-07-05 表面増強ラマン散乱素子
TW102128717A TWI604186B (zh) 2012-08-10 2013-08-09 Surface Enhanced Raman Scattering Element
CN201380040860.1A CN104508466B (zh) 2012-08-10 2013-08-09 表面增强拉曼散射元件
EP13828081.3A EP2884265A4 (en) 2012-08-10 2013-08-09 SURFACE-REINFORCED RAM SPREADING ELEMENT
US14/420,502 US9863883B2 (en) 2012-08-10 2013-08-09 Surface-enhanced raman scattering element
PCT/JP2013/071704 WO2014025035A1 (ja) 2012-08-10 2013-08-09 表面増強ラマン散乱素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013142164A JP6023669B2 (ja) 2013-07-05 2013-07-05 表面増強ラマン散乱素子

Publications (3)

Publication Number Publication Date
JP2015014546A JP2015014546A (ja) 2015-01-22
JP2015014546A5 true JP2015014546A5 (enrdf_load_stackoverflow) 2015-05-21
JP6023669B2 JP6023669B2 (ja) 2016-11-09

Family

ID=52436352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013142164A Active JP6023669B2 (ja) 2012-08-10 2013-07-05 表面増強ラマン散乱素子

Country Status (1)

Country Link
JP (1) JP6023669B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6564203B2 (ja) * 2015-02-26 2019-08-21 浜松ホトニクス株式会社 表面増強ラマン散乱素子及びその製造方法
KR101886619B1 (ko) * 2016-05-17 2018-08-10 충남대학교산학협력단 표면증강 라만산란 기판, 이를 포함하는 분자 검출용 소자 및 이의 제조방법
EP3635384A4 (en) * 2017-09-14 2021-01-20 Hewlett-Packard Development Company, L.P. CHROMATOGRAPHIC MEASUREMENT OF SURFACE ENHANCED LUMINESCENCE (SEL)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7460224B2 (en) * 2005-12-19 2008-12-02 Opto Trace Technologies, Inc. Arrays of nano structures for surface-enhanced Raman scattering
US7388661B2 (en) * 2006-10-20 2008-06-17 Hewlett-Packard Development Company, L.P. Nanoscale structures, systems, and methods for use in nano-enhanced raman spectroscopy (NERS)
WO2011047690A1 (en) * 2009-10-23 2011-04-28 Danmarks Tekniske Universitet Surface enhanced raman scattering substrates consumables for raman spectroscopy
US20110166045A1 (en) * 2009-12-01 2011-07-07 Anuj Dhawan Wafer scale plasmonics-active metallic nanostructures and methods of fabricating same
CN105911814A (zh) * 2010-05-21 2016-08-31 普林斯顿大学 用于增强局部电场、光吸收、光辐射、材料检测的结构以及用于制作和使用此结构的方法

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