JP2015012261A5 - - Google Patents

Download PDF

Info

Publication number
JP2015012261A5
JP2015012261A5 JP2013138831A JP2013138831A JP2015012261A5 JP 2015012261 A5 JP2015012261 A5 JP 2015012261A5 JP 2013138831 A JP2013138831 A JP 2013138831A JP 2013138831 A JP2013138831 A JP 2013138831A JP 2015012261 A5 JP2015012261 A5 JP 2015012261A5
Authority
JP
Japan
Prior art keywords
thermoelectric conversion
region
electrode side
conversion layer
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013138831A
Other languages
Japanese (ja)
Other versions
JP2015012261A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2013138831A priority Critical patent/JP2015012261A/en
Priority claimed from JP2013138831A external-priority patent/JP2015012261A/en
Priority to PCT/JP2014/066694 priority patent/WO2015002029A1/en
Publication of JP2015012261A publication Critical patent/JP2015012261A/en
Publication of JP2015012261A5 publication Critical patent/JP2015012261A5/ja
Pending legal-status Critical Current

Links

Claims (7)

熱電変換材料およびドーパントを含有する熱電変換層と、前記熱電変換層上に設けられる一対の電極とを有し、
一方の電極側となる前記熱電変換層の半分の領域である第１の領域における前記ドーパントのドープ率の平均が、他方の電極側となる前記熱電変換層の半分の領域である第２の領域における前記ドーパントのドープ率の平均よりも大きく、
前記熱電変換層の前記熱電変換材料が、有機材料であり、
一方の電極側が高温部であり、他方の電極側が低温部であることを特徴とする熱電変換素子。 A thermoelectric conversion layer containing a thermoelectric conversion material and a dopant, and a pair of electrodes provided on the thermoelectric conversion layer,
The second region in which the average doping ratio of the dopant in the first region which is a half region of the thermoelectric conversion layer on one electrode side is a half region of the thermoelectric conversion layer on the other electrode side much larger than the average of the doping ratio of the dopant in,
The thermoelectric conversion material of the thermoelectric conversion layer is an organic material;
One thermoelectric conversion element characterized in that one electrode side is a high temperature part and the other electrode side is a low temperature part . 前記第１の領域におけるドープ率が３〜１０ｍｏｌ％である請求項１に記載の熱電変換素子。   The thermoelectric conversion element according to claim 1 whose dope rate in said 1st field is 3-10 mol%. 前記ドーパントは、酸化合物である請求項１または２に記載の熱電変換素子。 The dopant is, thermoelectric conversion element according to claim 1 or 2, an acid compound. 前記酸化合物が、オニウム塩化合物に熱または活性エネルギー線を照射して発生するものである請求項３に記載の熱電変換素子。 The thermoelectric conversion element according to claim 3 , wherein the acid compound is generated by irradiating an onium salt compound with heat or active energy rays. 前記熱電変換層の前記ドープ率は、前記他方の電極側から前記一方の電極側に向かうに従って、漸次、増加する請求項１〜４のいずれか１項に記載の熱電変換素子。 The thermoelectric conversion element according to any one of claims 1 to 4 , wherein the doping rate of the thermoelectric conversion layer gradually increases from the other electrode side toward the one electrode side. 前記一方の電極に接する領域における前記ドープ率が、前記他方の電極に接する領域における前記ドープ率よりも大きい請求項１〜５のいずれか１項に記載の熱電変換素子。 The doping ratio is thermoelectric conversion device according to any one of the doping ratio claim 1-5 larger than in the region in contact with the other electrode in the region in contact with the one electrode. 前記熱電変換層の前記第１の領域側に熱源との接触部を有する請求項１〜６のいずれか１項に記載の熱電変換素子。 The thermoelectric conversion device according to any one of claims 1 to 6 having a contact portion between the heat source to the first region side of the thermoelectric conversion layer.
JP2013138831A 2013-07-02 2013-07-02 Thermoelectric conversion element Pending JP2015012261A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013138831A JP2015012261A (en) 2013-07-02 2013-07-02 Thermoelectric conversion element
PCT/JP2014/066694 WO2015002029A1 (en) 2013-07-02 2014-06-24 Thermoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013138831A JP2015012261A (en) 2013-07-02 2013-07-02 Thermoelectric conversion element

Publications (2)

Publication Number Publication Date
JP2015012261A JP2015012261A (en) 2015-01-19
JP2015012261A5 true JP2015012261A5 (en) 2016-01-21

Family

ID=52143608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013138831A Pending JP2015012261A (en) 2013-07-02 2013-07-02 Thermoelectric conversion element

Country Status (2)

Country Link
JP (1) JP2015012261A (en)
WO (1) WO2015002029A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6704577B2 (en) * 2015-02-23 2020-06-03 国立大学法人 奈良先端科学技術大学院大学 Method for producing carbon nanotube-dopant composition composite and carbon nanotube-dopant composition composite
JP2021019032A (en) * 2019-07-18 2021-02-15 株式会社テックスイージー Thermionic element and manufacturing method of the same
JP2021111664A (en) * 2020-01-08 2021-08-02 国立大学法人鳥取大学 Thermoelectric conversion element and manufacturing method therefor, and thermoelectric conversion device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3564860A (en) * 1966-10-13 1971-02-23 Borg Warner Thermoelectric elements utilizing distributed peltier effect
JPH1074986A (en) * 1996-06-27 1998-03-17 Natl Aerospace Lab Production of thermoelectric conversion element, pi-type thermoelectric conversion element pair and thermoelectric conversion module
WO2006043514A1 (en) * 2004-10-18 2006-04-27 Meidensha Corporation Structure of peltier element or seebeck element and its manufacturing method
JP3879769B1 (en) * 2006-02-22 2007-02-14 株式会社村田製作所 Thermoelectric conversion module and manufacturing method thereof
AT503493A3 (en) * 2007-06-21 2008-07-15 Avl List Gmbh THERMOELECTRIC GENERATOR FOR THE CONVERSION OF THERMAL ENERGY IN ELECTRICAL ENERGY
JP2010278191A (en) * 2009-05-28 2010-12-09 Konica Minolta Holdings Inc Thermoelectric conversion element
WO2012133314A1 (en) * 2011-03-28 2012-10-04 富士フイルム株式会社 Conductive composition, conductive film using conducive composition, and method for manufacturing conductive film
JP5789580B2 (en) * 2011-10-31 2015-10-07 富士フイルム株式会社 Thermoelectric conversion material and thermoelectric conversion element

Similar Documents

Publication Publication Date Title
JP2012015100A5 (en) Power storage device
JP2015233159A5 (en)
JP2012015101A5 (en) Power storage device
JP2013077836A5 (en)
JP2012033913A5 (en)
JP2014143409A5 (en) Metal oxide film
JP2015111742A5 (en) Manufacturing method of semiconductor device and semiconductor device
JP2013080699A5 (en) Negative electrode for power storage device
JP2014057055A5 (en) Semiconductor device
JP2012199534A5 (en)
JP2013110380A5 (en) Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
JP2012009414A5 (en) electrode
JP2014143184A5 (en) Power storage device
JP2014131022A5 (en)
JP2014103389A5 (en) Semiconductor device
JP2011228689A5 (en)
JP2014179596A5 (en)
JP2014099429A5 (en)
JP2011228690A5 (en)
JP2013225493A5 (en)
JP2011228691A5 (en)
JP2012235098A5 (en) Semiconductor device
JP2012009432A5 (en) Method for manufacturing power storage device
JP2013243352A5 (en) Evaluation method of oxide semiconductor film, oxide semiconductor film, and semiconductor device
JP2013062495A5 (en)