JP2015004551A - Radiation detection apparatus and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique advantageous for forming a scintillator layer on a sensor substrate with an evaporation method after coupling the sensor substrate and a support substrate via a coupling layer.SOLUTION: A method of manufacturing a radiation detection apparatus includes: a process in which a sensor substrate formed with a photoelectric conversion part and a support substrate are arranged via a coupling material; a process in which a coupling layer for coupling the sensor substrate and the support substrate is formed by curing the coupling material; and a process in which a scintillator layer is formed on the sensor substrate with an evaporation method. The coupling layer includes particles and an adhesive. The particles are arranged so that a cavity is formed therebetween. The coupling layer has such heat resistance that coupling of the sensor substrate and the support substrate by the coupling layer is maintained in the process for forming the scintillator layer.

Description

  The present invention relates to a radiation detection apparatus and a manufacturing method thereof.

  A radiation detection apparatus in which a scintillator layer is disposed on a photoelectric conversion element array is known. In Patent Document 1, a sensor panel including a substrate, a photoelectric conversion element array disposed on the substrate, and a scintillator layer disposed on the photoelectric conversion element array is bonded to a support member with an adhesive layer. A radiation detection device is described. The adhesive layer is composed of a resin layer having a porous structure.

JP 2008-224429 A

  A method is considered in which a scintillator layer is formed on the sensor substrate by vapor deposition after the sensor substrate on which the photoelectric conversion unit is disposed and the support substrate that supports the sensor substrate are bonded by a bonding layer. In this method, when a normal heat-resistant resin is employed as the bonding layer, peeling may occur at the interface between the sensor substrate and the heat-resistant resin and / or the interface between the support substrate and the heat-resistant resin when the scintillator layer is formed. This is because air bubbles that are not discharged from the interface between the sensor substrate and the heat-resistant resin and / or the interface between the support substrate and the heat-resistant resin when the sensor substrate and the support substrate are combined are subjected to heat or pressure difference (vacuum chamber). This is due to expansion due to the difference between the pressure inside and the pressure inside the bubble.

  An object of the present invention is to provide an advantageous technique for forming a scintillator layer on a sensor substrate by vapor deposition after the sensor substrate and the support substrate are bonded through a bonding layer.

  One aspect of the present invention relates to a method for manufacturing a radiation detection apparatus, wherein the manufacturing method includes a step of arranging a sensor substrate on which a photoelectric conversion unit is formed and a support substrate via a bonding material, and the bonding material. A step of curing to form a bonding layer that bonds the sensor substrate and the support substrate, and a step of forming a scintillator layer on the sensor substrate by a vapor deposition method, wherein the bonding layer includes particles and an adhesive. The particles are arranged such that cavities are formed between each other, and the bonding layer is formed between the sensor substrate and the support substrate by the bonding layer in the step of forming the scintillator layer. It has heat resistance to maintain the bond.

  According to the present invention, an advantageous technique is provided for forming a scintillator layer on a sensor substrate by vapor deposition after the sensor substrate and the support substrate are bonded through a bonding layer.

The schematic plan view which shows the radiation detection panel of one Embodiment of this invention, and the sensor panel as the component. 1 is a partial schematic cross-sectional view of a radiation detection panel and a radiation detection apparatus incorporating the radiation detection panel according to one embodiment of the present invention. The schematic sectional drawing which shows the modification of a radiation detection panel. The figure which shows the manufacturing method of the radiation detection apparatus of one Embodiment of this invention. The figure which shows the manufacturing method of the radiation detection apparatus of one Embodiment of this invention. The figure which shows the manufacturing method of the radiation detection apparatus of one Embodiment of this invention. The figure which shows Example 1-4 and Comparative Examples 1 and 2. FIG.

  FIG. 1A is a schematic plan view of a radiation detection panel 100 according to one embodiment of the present invention, and FIG. 1B is a sensor panel 102 as a component of the radiation detection panel 100. FIG. 2A is a cross-sectional view of the radiation detection panel 100 taken along line AA in FIG. FIG. 2B is a cross-sectional view showing a part of the radiation detection apparatus 200 in which the radiation detection panel 100 is incorporated (corresponding to the part shown in FIG. 2A). FIG.2 (c) is the schematic diagram which expanded a part of Fig.2 (a).

  The radiation detection panel 100 includes a sensor panel 102 and a scintillator 101 coupled to the sensor panel 102. The sensor panel 102 includes a sensor substrate 105 on which the photoelectric conversion unit 106 is formed, a support substrate 103, and a bonding layer 104 that couples the support substrate 103 and the sensor substrate 105. The sensor panel 102 may include a protective layer 107 and a pad 108 that protect the photoelectric conversion unit 106 formed on the sensor substrate 105. A connection portion 109 such as a flexible cable for connecting the sensor panel 102 and the mounting substrate 118 is connected to the pad 108.

  The scintillator 101 includes a scintillator layer 110 that converts radiation into light. The scintillator layer 110 may further include a protective layer 111 and / or a reflective layer 112 that protects the scintillator layer 110. Sealing portions 113 for preventing moisture from entering the scintillator layer 110 are provided at the ends of the protective layer 111 and the reflective layer 112. A sealing portion 114 can also be provided at an end portion of the bonding layer 104.

  The radiation is typically X-rays, but may be α-rays, β-rays or γ-rays. The radiation emitted from the radiation source and passing through the subject is converted into light in the scintillator layer 110, the light is converted into electric charge in the photoelectric conversion unit 106, and a signal corresponding to the electric charge is output from the sensor panel 102.

  The radiation detection apparatus 200 includes a protection unit 117 that holds and protects the mounting substrate 118, a damper material 116 that is disposed between the support substrate 103 of the sensor panel 102 and the protection unit 117, and a housing 119 that houses them. including. A circuit for controlling the sensor panel 102 and processing a signal from the sensor panel 102 is formed on the mounting board 118, and is connected to the sensor panel 102 via the connection unit 109.

  The photoelectric conversion unit 106 includes at least one photoelectric conversion element, and typically includes a photoelectric conversion element array including a plurality of photoelectric conversion elements. The sensor substrate 105 can be a semiconductor substrate such as a silicon substrate, for example. When the sensor substrate 105 is a semiconductor substrate, the photoelectric conversion elements constituting the photoelectric conversion unit 106 can be formed in the semiconductor substrate. The sensor substrate 105 can include a switching element for reading out the electric charge generated by the photoelectric conversion element.

  As illustrated in FIG. 1B, a plurality of sensor substrates 105 can be supported by one surface of one support substrate 103, but only one sensor substrate 105 is supported by one surface of one support substrate 103. May be. A configuration in which a plurality of sensor substrates 105 are supported by one support substrate 103, that is, a configuration in which a plurality of sensor substrates 105 are tiled is advantageous for obtaining a radiation detection apparatus having a large imaging region.

  Hereinafter, details of each part of the radiation detection apparatus 200 will be described by way of example.

  The protective layer 107 can be made of, for example, SiN, TiO2, LiF, Al2O3, or MgO. The protective layer 107 may be made of polyphenylene sulfide resin, fluorine resin, polyether ether ketone resin, liquid crystal polymer, polyether nitrile resin, polysulfone resin, polyether sulfone resin, or polyarylate resin. Alternatively, the protective layer 107 may be made of a polyamideimide resin, a polyetherimide resin, a polyimide resin, an epoxy resin, or a silicone resin. However, the protective layer 107 should be made of a material having a high transmittance with respect to the wavelength of the light converted by the scintillator layer 110 so that the light converted by the scintillator layer 110 can pass through the protective layer 107. It is.

  The support substrate 103 can be made of a material having excellent heat resistance. Specifically, the support substrate 103 can be made of glass, silicon, Si3N4, AlN, or molybdenum. Alternatively, the support substrate 103 can be made of CFRP, GFRP, AFRP, or amorphous carbon.

  The bonding layer 104 includes particles 120 and an adhesive 121, as schematically shown in FIG. 2 (c), and the particles 120 are arranged such that cavities 122 are formed between each other. Further, the bonding layer 104 has heat resistance that maintains the bonding between the sensor substrate 105 and the support substrate 103 by the bonding layer 104 in the step of forming the scintillator layer 110 on the sensor substrate 105 by vapor deposition. For example, the bonding layer 104 preferably has heat resistance so that the bonding between the sensor substrate 105 and the support substrate 103 is maintained at a temperature of 200 ° C. or higher. The bonding layer 104 is configured by curing a bonding material. Of course, the bonding material includes particles 120 and an adhesive 121 that are components of the bonding layer 104.

  The particle 120 may be a particle made of an organic material, a particle made of an inorganic material, or a particle made of an organic material and an inorganic material. Adhesive 121 bonds particles 120 together. The adhesive 121 bonds the particle 120 and the sensor substrate 105, and bonds the particle 120 and the support substrate 103. The adhesive 121 may be made of an organic material, an inorganic material, or an organic material and an inorganic material.

  When the sensor substrate 105 and the support substrate 103 are bonded to each other by the bonding layer 104, gas is confined at the interface between the sensor substrate 105 and the bonding layer 104 and / or the interface between the support substrate 103 and the bonding layer 104, and bubbles are generated. sell. When there is no path for exhausting this gas, when the scintillator layer 110 is formed on the sensor substrate 105 by vapor deposition, the heat and pressure difference for vapor deposition (the pressure in the vacuum chamber and the pressure in the bubble) The bubbles may expand due to the difference in In this embodiment, since there is a cavity 122 between the particles 120, the cavity 122 provides a gas exhaust path. Therefore, peeling at the interface between the sensor substrate 105 and the bonding layer 104 and / or the interface between the support substrate 103 and the bonding layer 104 due to the expansion of bubbles can be suppressed.

  When the particles 120 are made of an organic material, the material of the particles 120 is preferably at least one material selected from the group consisting of the following.

<Polymethyl methacrylate cross-linked product, polybutyl methacrylate cross-linked product, polyacrylic acid ester cross-linked product, styrene-acrylic cross-linked product, polyamideimide resin, polyphenylene sulfide resin, epoxy resin, polyethersulfone resin>
When the particles 120 are made of an inorganic material, the material of the particles 120 is preferably at least one material selected from the group consisting of the following.

<Silica, alumina, cordierite, bentonite, zirconia, zircon, carbon, yttrium oxide, magnesia, titania, chrome oxide>
When the particles 120 are composed of an organic substance and an inorganic substance, the material of the particles 120 is preferably a silica / acrylic composite compound, which is a composite material of an organic substance and an inorganic substance.

  The adhesive 121 is preferably an epoxy, acrylic or silicone adhesive if it is organic, and an alkali metal silicate, phosphate or silica sol adhesive if it is inorganic. Is preferred.

  The bonding material for forming the bonding layer 104 can be applied by, for example, spraying, slit coater, screen printing, spin coater, bar coater, doctor blade, dipping, washcoat, marking device, dispenser, brush or brush.

  The thickness of the bonding layer 104 is preferably 20 μm or more. This is because, when tiling a plurality of sensor substrates 105, the thickness variation between the sensor substrates 105 can be 20 μm at the maximum. The upper limit of the thickness of the bonding layer 104 is not particularly limited and can be freely determined according to the specification.

  Considering that the thickness variation between the sensor substrates 105 can be 20 μm at the maximum, the diameter of the particles 120 is preferably 20 μm or less in order to fill the step between the sensor substrates 105. If the diameter of the particle 120 is too small, a sufficient discharge path for discharging the gas confined when the sensor substrate 105 and the support substrate 103 are combined cannot be secured. It is preferably 1 μm or more.

  The volume filling rate of the particles 120 in the bonding layer 104 is preferably 40% or more and 80% or less. This is because when the volume filling rate is lower than 40%, the strength as the bonding layer 104 is weakened, and when the volume filling rate is higher than 80%, a sufficient discharge path for discharging the gas cannot be ensured.

  From the viewpoint of dispersibility of the binding material in an organic solvent (for example, alcohol), bonding strength, and securing of the cavity 122, the value calculated by the following formula (1) is 0.01% or more and 10% or less. It is preferable.

(Volume of all organic adhesives contained in bonding material) / ((Volume of all particles 120 contained in bonding material) + (Volume of all organic adhesives contained in bonding material) + (Included in bonding material) Volume of all inorganic adhesives))
(1) Formula The scintillator layer 110 may have an area smaller than the area of the sensor substrate array including the plurality of tiling sensor substrates 105. The scintillator layer 110 can be, for example, a columnar crystal scintillator represented by cesium iodide (CsI: Tl) to which a small amount of thallium (Tl) is added. Alternatively, the scintillator layer 110 can be composed of a particulate scintillator represented by gadolinium sulfate (GOS: Tb) to which a small amount of terbium (Tb) is added.

  A protective layer 111 is disposed on the scintillator layer 110. The protective layer 111 is disposed so as to cover all or part of the scintillator layer 110. In particular, when the scintillator layer 110 is formed of a columnar crystal scintillator such as CsI: Tl, the characteristics of the scintillator layer 110 are deteriorated by moisture, so that the protective layer 111 is necessary. The thickness of the protective layer 111 is preferably 20 μm or more and 200 μm or less. If it is 20 μm or less, it is difficult to completely cover the irregularities on the surface of the scintillator layer 110 and defects due to abnormal growth, and the moisture-proof function may be lowered. On the other hand, if the thickness exceeds 200 μm, the scattering in the protective layer 111 of the light generated in the scintillator layer 110 or the light reflected by the reflective layer 112 increases, and the resolution of the obtained image and MTF (Modulation Transfer Function) may decrease. There is sex.

  Examples of the material of the protective layer 111 include general organic sealing materials such as silicone resins, acrylic resins, and epoxy resins, and hot-melt resins such as polyesters, polyolefins, and polyamides. A resin with low transmittance is desirable. As the protective layer 111, an organic film such as polyparaxylylene, polyurea or polyurethane formed by CVD deposition is suitable. Moreover, if it can endure the heating process in manufacture, hot melt resin can also be employ | adopted. Examples of hot melt resins that satisfy the moisture resistance required for the protective layer 111 include polyolefin resins and polyester resins. In particular, a polyolefin resin is suitable as a resin having a low moisture absorption rate. A polyolefin resin is also suitable as the resin having high light transmittance. Therefore, a hot melt resin based on a polyolefin resin is more preferable as the protective layer 111.

  The polyolefin resin comprises at least one of ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, ethylene-methacrylic acid copolymer, and ethylene-methacrylic acid ester copolymer. Can be contained as a main component. Alternatively, the polyolefin resin can contain an ionomer resin as a main component.

  As hot melts, Hirodine 7544 (manufactured by Hirodine Industries), O-4121 (manufactured by Kurashiki Spinning), W-4210 (manufactured by Kurashiki Spinning), H-2500 (manufactured by Kurashiki Spinning), P-2200 (manufactured by Kurashiki Spinning), Z -2 (manufactured by Kurashiki Spin), M-5 (manufactured by Kurashiki Spin), and the like can be used.

  The reflective layer 112 improves light utilization efficiency by reflecting light that has traveled to the opposite side of the photoelectric conversion unit 106 from the light converted from radiation by the scintillator layer 110 and guiding it to the photoelectric conversion unit 106. The reflective layer 112 prevents light (external light) other than the light generated by the scintillator layer 110 from entering the photoelectric conversion unit 106.

  As the reflective layer 112, for example, a metal foil or a metal thin film is preferable. The thickness of the reflective layer 112 is preferably 1 μm or more and 100 μm or less. If the thickness is less than 1 μm, pinhole defects are likely to occur when the reflective layer 112 is formed, and the light shielding property is poor. On the other hand, if it exceeds 100 μm, the amount of radiation absorbed becomes too large, and the step formed by the end of the reflective layer 112 on the sensor substrate 105 becomes too large. Examples of the material of the reflective layer 112 include metal materials such as aluminum, gold, copper, and aluminum alloys. Among these, aluminum or gold which is a material having particularly high reflection characteristics is preferable.

  The sealing portions 113 and 114 are preferably made of a material having high moisture resistance and low moisture permeability, and are preferably made of, for example, an epoxy resin or an acrylic resin. The sealing portions 113 and 114 may be made of silicone-based, polyester-based, polyolefin-based, or polyamide-based resin. When the sealing parts 113 and 114 are comprised with a thermosetting resin, resin hardened | cured with the heat lower than the heat-resistant temperature of the connection part 109 is preferable. However, when the sealing portion 113 is formed before the connection portion 109 is connected to the pad 108, the sealing portion 113 may be formed of a sealing resin having a curing temperature of 200 ° C. or lower. Further, the sealing portions 113 and 114 may be made of a resin other than the thermosetting resin, for example, a UV curable resin, a two-component curable resin, or a natural curable resin. The sealing part 113 and the sealing part 114 may be comprised with the same material, and may be comprised with a mutually different material. As illustrated in FIG. 3, the sealing portion 113 may also serve as the sealing portion 114.

  The protective part 117 that holds and protects the mounting substrate 118 is a resin molded product made of Al, stainless steel, Mg, Cu, Zn, Sn, Zn, or oxides or alloys thereof, amorphous carbon, carbon fiber reinforcing material, or organic polymer. But you can. The housing 119 is preferably formed of the same material as the protective portion 117 that holds and protects the mounting substrate 118.

Hereinafter, specific examples 1-4 and comparative examples 1 and 2 of the manufacturing method of the radiation detection apparatus 200 will be described with reference to FIGS. FIG. 7 summarizes Examples 1-4 and Comparative Examples 1 and 2.
Example 1
First, in the step shown in FIG. 4A, a binding material 104 ′ is applied to the surface of the support substrate 103 by screen printing. Here, the binding material 104 ′ is made by dispersing inorganic particles made of alumina, silicone resin (inorganic adhesive), and organosilica sol (organic adhesive) in alcohol (organic solvent). The volume composition ratio of the inorganic particles, the silicone resin, and the organosilica sol can be inorganic particles: silicone resin: silica sol = 96: 3: 1.

  In the step shown in FIG. 4B, the plurality of sensor substrates 105 arranged by the tiling apparatus are adsorbed by the adsorption jig 115, and the plurality of sensor substrates 105 are bonded to the bonding material 104 on the support substrate 103 in this state. 'Contact.

  In the step shown in FIG. 4C, the bonding material 104 ′ is heated at 210 ° C. for 1 hour with the plurality of sensor substrates 105 adsorbed by the adsorption jig 115. As a result, the bonding material 104 ′ is cured to form the bonding layer 104. At this time, a cavity 122 is formed in the particle 120 and the particle 120.

  In the step shown in FIG. 5A, a protective layer 107 is formed by applying a protective film material made of polyimide on the sensor substrate 105 and curing it at 200 ° C.

  In the step shown in FIG. 5B, a scintillator layer 110 having a columnar crystal structure is formed on the protective layer 107. When the scintillator layer 110 is composed of CsI: Tl, the scintillator layer 110 can be formed by co-evaporation of CsI (cesium iodide) and TlI (thallium iodide). Specifically, the resistance heating boat is filled with the material of the scintillator layer 110 as a vapor deposition material, and the sensor panel 102 on which the protective layer 107 is formed is placed on a rotatable holder disposed inside the vapor deposition apparatus. Then, argon (Ar) gas is introduced while evacuating the inside of the vapor deposition apparatus, the degree of vacuum is adjusted, the temperature is increased to 200 ° C. at maximum, and the scintillator layer 110 is formed on the sensor panel 102.

  In the step shown in FIG. 5C, a film-like sheet is prepared in which a reflective layer 112 made of an Al film is laminated on a protective layer made of PET. And the protective layer 111 which consists of hot-melt resin which uses polyolefin resin as the raw material is adhere | attached on the reflection layer 112 of this sheet | seat on a film using a heat roller. Thereby, a sheet having a three-layer structure is formed. And this sheet | seat is arrange | positioned so that the scintillator layer 110 may be covered. Then, the sheet is heated and pressed by a vacuum laminator, and the sheet is fixed to the scintillator layer 110 and the sensor panel 102 by welding of the protective layer 111. Thereafter, the periphery is sealed with a sealing portion 113. Thereafter, a pad 108 can be formed.

  In the step shown in FIG. 6A, the connecting portion 109 is thermocompression bonded to the pad 108 of the sensor substrate 105. Thereby, the radiation detection panel 100 is formed. In the step shown in FIG. 6B, the radiation detection panel 100 is bonded to the protection unit 117 via the damper material 116. In the step shown in FIG. 6C, the connection portion 109 is connected to the mounting substrate 118, and the structure including the radiation detection panel 100, the damper material 116, and the protection portion 117 is covered with the housing 119.

The radiation detection apparatus 200 was manufactured according to the above manufacturing method, and the following evaluation was performed.
(Evaluation 1) The sensor panel 102 immediately after the deposition of the scintillator layer was visually inspected. In this inspection, an inspection was performed for a poor connection between the sensor substrate 105 and the support substrate 103 due to expansion of bubbles and a displacement of the sensor substrate 105 with respect to the support substrate 103.
(Evaluation 2) The radiation detection apparatus 200 was irradiated with radiation, and the image output from the radiation detection apparatus 200 was evaluated.

As a result of the evaluation, no abnormality was confirmed.
(Example 2)
In the step shown in FIG. 4A, a binding material 104 ′ is applied to the surface of the support substrate 103 by screen printing. Here, the binding material 104 ′ is made by dispersing inorganic particles made of zirconia, silicone resin (inorganic adhesive), and organosilica sol (organic adhesive) in alcohol (organic solvent). The volume composition ratio of the inorganic particles, the silicone resin, and the silica sol inorganic particles may be inorganic particles: silicone resin: silica sol = 85: 5: 10. Subsequent steps are the same as those in the first embodiment.

Although the same evaluation as in Example 1 was performed, no abnormality was confirmed.
Example 3
In the step shown in FIG. 4A, a binding material 104 ′ is applied to the surface of the support substrate 103 by screen printing. Here, the binding material 104 ′ is made by dispersing inorganic particles made of silica and silicone resin (inorganic adhesive) in alcohol (organic solvent). The volume composition ratio of the inorganic particles and the silicone resin can be inorganic particles: silicone resin = 93: 7. Subsequent steps are the same as those in the first embodiment.

Although the same evaluation as in Example 1 was performed, no abnormality was confirmed.
Example 4
In the step shown in FIG. 4A, a binding material 104 ′ is applied to the surface of the support substrate 103 by screen printing. Here, the bonding material 104 ′ is made of organic particles made of a crosslinked polystyrene resin and an epoxy resin (organic adhesive). The volume composition ratio of the organic particles and the epoxy resin may be crosslinked polystyrene: epoxy resin = 93: 7.

  In the step shown in FIG. 4B, the plurality of sensor substrates 105 arranged by the tiling apparatus are adsorbed by the adsorption jig 115, and the plurality of sensor substrates 105 are bonded to the bonding material 104 on the support substrate 103 in this state. 'Contact. That is, in the step shown in FIG. 4B, the sensor substrate 105 and the support substrate 103 are disposed via the bonding material 104 '.

  In the step shown in FIG. 4C, the bonding material 104 ′ is heated at 120 ° C. for 30 minutes with the plurality of sensor substrates 105 being sucked by the suction jig 115. As a result, the bonding material 104 ′ is cured to form the bonding layer 104. At this time, a cavity 122 between the particles 120 and the particles 120 is formed. Subsequent steps are the same as those in the first embodiment.

Although the same evaluation as in Example 1 was performed, no abnormality was confirmed.
(Comparative Example 1)
In the same procedure as in Example 1, a heat-resistant silicone adhesive sheet was used as an adhesive layer for adhering the support substrate 103 and the sensor substrate 105.

When (Evaluation 1) was performed, peeling of the sensor substrate 105 due to bubbles occurred. Therefore, (Evaluation 2) was not performed.
(Comparative Example 2)
In the same procedure as in Example 1, a heat-resistant polyimide adhesive was used as an adhesive layer for adhering the support substrate 103 and the sensor substrate 105.

  When (Evaluation 1) was performed, no abnormality was observed, but when (Evaluation 2) was performed, the image output from the radiation detection apparatus 200 was uncomfortable.

Claims (15)

A method for manufacturing a radiation detection apparatus, comprising:
Arranging the sensor substrate on which the photoelectric conversion unit is formed and the support substrate via a binding material;
Curing the bonding material to form a bonding layer that bonds the sensor substrate and the support substrate;
Forming a scintillator layer on the sensor substrate by vapor deposition,
The bonding layer includes particles and an adhesive, the particles are arranged such that cavities are formed between each other, and the bonding layer is formed by the bonding layer in the step of forming the scintillator layer. Having heat resistance to maintain a bond between the sensor substrate and the support substrate;
A method of manufacturing a radiation detection apparatus. The volume filling factor of the particles in the bonding layer is 40% or more and 80% or less.
The manufacturing method of the radiation detection apparatus of Claim 1 characterized by the above-mentioned. The diameter of the particles is 0.1 μm or more and 20 μm or less.
The manufacturing method of the radiation detection apparatus of Claim 1 or 2 characterized by the above-mentioned. (Volume of all organic adhesives contained in the bonding material) / ((volume of all particles contained in the bonding material) + (volume of all organic adhesives contained in the bonding material) + (the bonding The value of the volume of all inorganic adhesives contained in the material)) is 0.01% or more and 10% or less,
The manufacturing method of the radiation detection apparatus of any one of Claim 1 thru | or 3 characterized by the above-mentioned. The bonding layer has a thickness of 20 μm or more;
The manufacturing method of the radiation detection apparatus of any one of Claim 1 thru | or 4 characterized by the above-mentioned. In the step of disposing the sensor substrate and the support substrate via the binding material, the binding material is disposed between the sensor substrate and the support substrate in a state of being dispersed in an organic solvent.
A method for manufacturing a radiation detection apparatus according to any one of claims 1 to 5, wherein The particles include a polymethyl methacrylate cross-linked product, a polybutyl methacrylate cross-linked product, a polyacrylic acid ester cross-linked product, a styrene-acrylic cross-linked product, a polyamideimide resin, a polyphenylene sulfide resin, an epoxy resin, and a polyether sulfone resin. Composed of at least one material selected from the group consisting of:
The manufacturing method of the radiation detection apparatus of any one of Claim 1 thru | or 6 characterized by the above-mentioned. The particles are composed of at least one material selected from silica, alumina, cordierite, bentonite, zirconia, zircon, carbon, yttrium oxide, magnesia, titania and chrome oxide.
The manufacturing method of the radiation detection apparatus of any one of Claim 1 thru | or 6 characterized by the above-mentioned. The particles are composed of a silica / acrylic composite compound,
The manufacturing method of the radiation detection apparatus of any one of Claim 1 thru | or 6 characterized by the above-mentioned. The adhesive is an epoxy, acrylic, silicone, alkali metal silicate, phosphate or silica sol adhesive,
The method of manufacturing a radiation detection apparatus according to claim 1, wherein the radiation detection apparatus is manufactured as described above. The sensor substrate is a semiconductor substrate on which a photoelectric conversion unit is formed.
The manufacturing method of the radiation detection apparatus of any one of Claim 1 thru | or 10 characterized by the above-mentioned. A radiation detection device having a support substrate, a sensor substrate on which a photoelectric conversion unit is formed, and a scintillator layer,
A bonding layer for bonding the support substrate and the sensor substrate;
The bonding layer includes particles and an adhesive, and the particles are arranged such that cavities are formed between each other.
A radiation detector characterized by that. The sensor substrate is a semiconductor substrate on which a photoelectric conversion unit is formed.
The radiation detection apparatus according to claim 12. The volume filling factor of the particles in the bonding layer is 40% or more and 80% or less.
The radiation detection apparatus according to claim 12 or 13, characterized by the above. The diameter of the particles is 0.1 μm or more and 20 μm or less.
The radiation detection apparatus according to claim 12, wherein the radiation detection apparatus is a radiation detection apparatus.