JP2014534414A - 単層3d追跡半導体検出器 - Google Patents
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Abstract
Description
12 半導体センサ層
14 ピクセル読み出しチップ
16 バンプ接合
18 収集ダイオード
20 読み出し回路
22 電荷前置増幅器
24 信号処理電子回路
26 電極
28 座標系
30 弁別器論理回路
32 しきい値線
34 タイムオーバしきい値回路
36 相対タイミング回路
38 粒子軌道
a ピッチ
d 厚さ
US2006/0054828は医療診断装置のための検出器の配置を開示しており、当該医療診断装置において、検出器にぶつかるX線またはガンマ放射線が検出され、空間分解能で評価される。X線またはガンマ量子が検出器にぶつかると、読み出しサイクル内に影響されるセンサ素子の空間分布が得られる。よって、入射角は、影響されたピクセルの領域のサイズと統計的に関連付けられる。
Claims (26)
- 半導体センサ層(12)であって、その内部において、検出されるべき粒子と相互作用すると電荷が遊離されえて、XY平面を画成しZ方向に延在する厚さ(d)を有する、半導体センサ層(12)と、
前記半導体層(12)に電気的に接続され、前記半導体センサ層(12)の対応する容積において生成された電荷を示す信号を検出するための読み出し回路(20)のアレイを備える読み出し電子回路層と
を備えるピクセル検出器(10)であって、
隣接する読み出し回路(20)が、前記隣接する読み出し回路(20)において検出された信号間の時間差情報を決定するように構成された相対タイミング回路(36)によって接続され、
前記時間差情報が、前記XY平面に対して傾いた粒子軌道(38)によってもたらされる、前記対応する隣接するセンサ容積における電荷生成の各位置の各Z成分における差を示すことを特徴とするピクセル検出器(10)。 - 前記各読み出し回路(20)は、前記半導体センサ層(12)の前記対応する容積のフットプリントに収容され、前記相対タイミング回路(36)は、前記読み出し電子回路層に、好ましくは共通のチップ(14)上に集積化されている請求項1に記載のピクセル検出器(10)。
- 前記各読み出し回路(20)は、放射線場の検出器出力画像におけるピクセルを提供する請求項1に記載のピクセル検出器(10)。
- 前記半導体センサ層(12)の前記厚さdは、100μm〜500mm、好ましくは100μm〜10mmである請求項1ないし4のいずれか一項に記載のピクセル検出器(10)。
- 前記読み出し回路のアレイにおける読み出し回路(20)の前記ピッチaは、10μm〜1mm、好ましくは10μm〜1mm、好ましくは30μm〜80μmである請求項1ないし5のいずれか一項に記載のピクセル検出器(10)。
- 前記半導体の材料は、Si、Ge、CdTe、CdZnTe、GaAsおよびダイヤモンドからなるグループのうちの1つである請求項1ないし6のいずれか一項に記載のピクセル検出器(10)。
- 前記時間差情報は、前記2つの隣接する読み出し回路(20)のどちらが最初に前記信号を受信したかを示す2値情報を含む請求項1ないし7のいずれか一項に記載のピクセル検出器(10)。
- 前記時間差情報は、前記隣接する読み出し回路(20)のそれぞれにおける受信信号間の時間間隔の長さに関する情報を含む請求項1ないし8のいずれか一項に記載のピクセル検出器(10)。
- 前記相対タイミング回路(36)は、それぞれが前記隣接する読み出し回路(20)の1つに接続された2つの入力部を有する勝者独占回路を備え、前記勝者独占回路は前記2つの入力部のどちらが最初に信号を受信したか示す2値の出力を提供する請求項1ないし9のいずれか一項に記載のピクセル検出器(10)。
- 前記相対タイミング回路はXORゲートを備え、前記XORゲートの入力部のそれぞれは前記隣接する読み出し回路(20)の1つに接続されている請求項1ないし10のいずれか一項に記載のピクセル検出器(10)。
- 前記XORゲートの出力部は、前記XORゲートの出力が「真」である時間間隔を測定するためのデバイス、具体的には前記XORゲートの出力が「真」である間に充電されるキャパシタと接続されている請求項11に記載のピクセル検出器(10)。
- 前記XORゲートの入力は、前記XORゲートが前記それぞれの入力の立ち上がりエッジにのみ反応するようにラッチされる請求項11または請求項12に記載のピクセル検出器(10)。
- 前記各読み出し回路(20)は、入力信号を所定のしきい値と比較し、前記入力信号の電圧が前記所定のしきい値を超える場合にハイ信号を出力するように構成された弁別器論理回路(30)を備える請求項1ないし13のいずれか一項に記載のピクセル検出器(10)。
- 前記読み出し回路(20)は、前記弁別器論理回路(30)の出力が所与のしきい値を超える時間を決定するように構成されたタイムオーバしきい値回路(34)を備える請求項14に記載のピクセル検出器(10)。
- 前記各読み出し回路(20)は、前置増幅器、具体的には前記対応するセンサ容積において生成された前記電荷を増幅するための電荷増幅器(22)を備え、前記電荷増幅器の出力部が前記弁別器論理回路(30)の入力部と接続されている請求項1ないし15のいずれか一項に記載のピクセル検出器(10)。
- 前記各読み出し回路(20)は定フラクション弁別器を備える請求項1ないし13のいずれか一項に記載のピクセル検出器(10)。
- 2つの隣接する読み出し回路は弁別器を共有し、前記共有された弁別器は、2つの隣接する読み出し電極または読み出しダイオードから前置増幅された信号を受信し、どちらの信号が最初に受信されたかを判定する請求項1ないし13のいずれか一項に記載のピクセル検出器(10)。
- 前記読み出し電子回路層に接続された評価ユニットをさらに備え、
前記評価ユニットは、複数の読み出し回路(20)からの時間差情報に基づいて粒子軌道(38)のZ座標情報を構築するのに適している請求項1ないし18のいずれか一項に記載のピクセル検出器(10)。 - 前記評価ユニットは、前記時間差情報におけるタイムウォークを補正するように、前記各読み出し回路(20)に関連づけられた前記タイムオーバしきい値情報を明らかにするように構成された請求項19に記載のピクセル検出器(10)。
- γ線を放射する放射性同位元素の分布を再現するためのコンプトン・カメラであって、請求項1ないし20のいずれか一項に記載のピクセル検出器(10)を備えるコンプトン・カメラ。
- 前記ピクセル検出器(10)は、γ放射線のコンプトン散乱が発生する可能性があり、コンプトン電子の軌道が検出される散乱検出器として機能し、前記検出された軌道が、衝突するγ放射線の方向を再現する際の情報として役立つ請求項21に記載のコンプトン・カメラ。
- 前記コンプトン・カメラは、核医学診断デバイス、具体的にはSPECTデバイスまたは原子力発電所の廃炉をモニターするためのデバイスにおいて用いられる請求項19に記載のコンプトン・カメラ。
- 請求項1ないし20のいずれか一項に記載のピクセル検出器(10)を備えるハドロン治療デバイス、具体的には陽子線治療デバイス。
- 請求項1ないし20のいずれか一項に記載のピクセル検出器(10)を備える中性子イメージングデバイス。
- 請求項1ないし20のいずれか一項に記載のピクセル検出器を備えるγ線のX線またはγ線偏光計。
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KR20180060684A (ko) * | 2016-11-29 | 2018-06-07 | 일진방사선 엔지니어링 (주) | 스파이럴 그리드 전극을 구비하는 방사선 검출기 |
JP2022535689A (ja) * | 2019-05-24 | 2022-08-10 | フォンダツィオーネ ブルーノ ケスラー | 分配された光電子倍増管を伴う高空間解像度の固体画像センサ |
JP7384931B2 (ja) | 2019-05-24 | 2023-11-21 | フォンダツィオーネ ブルーノ ケスラー | 分配された光電子倍増管を伴う高空間解像度の固体画像センサ |
JP2021162521A (ja) * | 2020-04-02 | 2021-10-11 | 株式会社東芝 | 放射線計測装置 |
JP7391752B2 (ja) | 2020-04-02 | 2023-12-05 | 株式会社東芝 | 放射線計測装置 |
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US20140332691A1 (en) | 2014-11-13 |
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EP2758806B1 (en) | 2019-06-12 |
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