JP2014527286A5 - - Google Patents

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Publication number
JP2014527286A5
JP2014527286A5 JP2014520318A JP2014520318A JP2014527286A5 JP 2014527286 A5 JP2014527286 A5 JP 2014527286A5 JP 2014520318 A JP2014520318 A JP 2014520318A JP 2014520318 A JP2014520318 A JP 2014520318A JP 2014527286 A5 JP2014527286 A5 JP 2014527286A5
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JP
Japan
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pressure
exhaust valve
value
volume
time
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JP2014520318A
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Japanese (ja)
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JP2014527286A (ja
JP5943999B2 (ja
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Priority claimed from US13/183,520 external-priority patent/US8880210B2/en
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JP2014520318A 2011-07-15 2012-07-12 モデルベースの制御を使用して基板を処理するための方法および装置 Active JP5943999B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/183,520 2011-07-15
US13/183,520 US8880210B2 (en) 2011-07-15 2011-07-15 Methods and apparatus for processing substrates using model-based control
PCT/US2012/046452 WO2013012675A2 (en) 2011-07-15 2012-07-12 Methods and apparatus for processing substrates using model-based control

Publications (3)

Publication Number Publication Date
JP2014527286A JP2014527286A (ja) 2014-10-09
JP2014527286A5 true JP2014527286A5 (enExample) 2015-09-03
JP5943999B2 JP5943999B2 (ja) 2016-07-05

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JP2014520318A Active JP5943999B2 (ja) 2011-07-15 2012-07-12 モデルベースの制御を使用して基板を処理するための方法および装置

Country Status (6)

Country Link
US (1) US8880210B2 (enExample)
JP (1) JP5943999B2 (enExample)
KR (1) KR101591748B1 (enExample)
CN (1) CN103650109B (enExample)
TW (1) TWI506670B (enExample)
WO (1) WO2013012675A2 (enExample)

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US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
US20160253891A1 (en) * 2015-02-27 2016-09-01 Elwha Llc Device that determines that a subject may contact a sensed object and that warns of the potential contact
US10269601B2 (en) * 2015-10-20 2019-04-23 Applied Materials, Inc. Chamber leak and gas contaimination detection
WO2017095954A1 (en) * 2015-11-30 2017-06-08 Nextracker Systems for and methods of automatically scheduling and executing in situ tests on systems
US9963779B2 (en) 2016-02-29 2018-05-08 Goodrich Corporation Methods for modifying pressure differential in a chemical vapor process
US10777394B2 (en) * 2016-12-09 2020-09-15 Applied Materials, Inc. Virtual sensor for chamber cleaning endpoint
CN108256262B (zh) * 2018-02-07 2021-03-26 武汉科技大学 一种轴对称射流稳压腔参数设计的数值模拟方法
CN113534855B (zh) * 2020-04-14 2023-07-21 长鑫存储技术有限公司 一种机台气路流量调整系统及方法
JP7602350B2 (ja) * 2020-11-11 2024-12-18 株式会社堀場エステック 濃度制御システム、濃度制御方法、及び、濃度制御システム用プログラム
US12183550B2 (en) * 2021-02-26 2024-12-31 Taiwan Semiconductor Manufacturing Company Limited Wafer treatment system and method of treating wafer
US11955322B2 (en) * 2021-06-25 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Device for adjusting position of chamber and plasma process chamber including the same for semiconductor manufacturing
US20230048337A1 (en) * 2021-08-16 2023-02-16 Applied Materials, Inc. Prevention of contamination of substrates during pressure changes in processing systems
US20230062848A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device
US12130606B2 (en) * 2021-12-22 2024-10-29 Applied Materials, Inc. Disturbance compensation for substrate processing recipes
US20250140538A1 (en) * 2023-10-26 2025-05-01 Applied Materials, Inc. Model-driven pressure estimation
CN120060835A (zh) * 2025-04-28 2025-05-30 青岛思锐智能科技股份有限公司 一种原子层沉积反应腔室的气体压力控制系统、方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772501A (en) * 1995-10-12 1998-06-30 Gas Research Institute Indoor environmental conditioning system and method for controlling the circulation of non-conditioned air
JP2942239B2 (ja) * 1997-05-23 1999-08-30 キヤノン株式会社 排気方法及び排気装置、それを用いたプラズマ処理方法及びプラズマ処理装置
JP2001060578A (ja) * 1999-08-20 2001-03-06 Nec Corp 真空処理装置
JP2001257164A (ja) 2000-03-10 2001-09-21 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び圧力制御方法
JP2002091573A (ja) * 2000-09-19 2002-03-29 Toshiba Corp 圧力制御方法、処理装置および処理方法
US20050120805A1 (en) * 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US7437944B2 (en) * 2003-12-04 2008-10-21 Applied Materials, Inc. Method and apparatus for pressure and mix ratio control
KR100697280B1 (ko) * 2005-02-07 2007-03-20 삼성전자주식회사 반도체 제조 설비의 압력 조절 방법
US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
JP5050369B2 (ja) * 2006-03-06 2012-10-17 東京エレクトロン株式会社 処理装置
WO2007108370A1 (ja) * 2006-03-22 2007-09-27 Hitachi Kokusai Electric Inc. 基板処理装置
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
KR100874895B1 (ko) 2007-12-26 2008-12-19 (주)넥클 반도체 소자 제조에 적합한 진공압력 제어장치
WO2010024036A1 (ja) * 2008-08-28 2010-03-04 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置のクリーニング方法

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