KR101591748B1 - 모델 기반 제어를 사용하여 기판들을 프로세싱하기 위한 방법들 및 장치 - Google Patents

모델 기반 제어를 사용하여 기판들을 프로세싱하기 위한 방법들 및 장치 Download PDF

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KR101591748B1
KR101591748B1 KR1020147003688A KR20147003688A KR101591748B1 KR 101591748 B1 KR101591748 B1 KR 101591748B1 KR 1020147003688 A KR1020147003688 A KR 1020147003688A KR 20147003688 A KR20147003688 A KR 20147003688A KR 101591748 B1 KR101591748 B1 KR 101591748B1
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pressure
exhaust valve
processing volume
controller
value
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KR20140051949A (ko
Inventor
키쓰 브라이언 포트하우스
존 더블유. 레인
마리우쉬 그레고르
니르 메리
마이클 알. 라이스
알렉스 민코비치
홍빈 리
드미트리 에이. 드질노
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어플라이드 머티어리얼스, 인코포레이티드
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B17/00—Systems involving the use of models or simulators of said systems
    • G05B17/02—Systems involving the use of models or simulators of said systems electric
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
    • G05D16/2046—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means the plurality of throttling means being arranged for the control of a single pressure from a plurality of converging pressures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Fluid Mechanics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Fluid Pressure (AREA)
KR1020147003688A 2011-07-15 2012-07-12 모델 기반 제어를 사용하여 기판들을 프로세싱하기 위한 방법들 및 장치 Active KR101591748B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/183,520 US8880210B2 (en) 2011-07-15 2011-07-15 Methods and apparatus for processing substrates using model-based control
US13/183,520 2011-07-15
PCT/US2012/046452 WO2013012675A2 (en) 2011-07-15 2012-07-12 Methods and apparatus for processing substrates using model-based control

Publications (2)

Publication Number Publication Date
KR20140051949A KR20140051949A (ko) 2014-05-02
KR101591748B1 true KR101591748B1 (ko) 2016-02-04

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KR1020147003688A Active KR101591748B1 (ko) 2011-07-15 2012-07-12 모델 기반 제어를 사용하여 기판들을 프로세싱하기 위한 방법들 및 장치

Country Status (6)

Country Link
US (1) US8880210B2 (enExample)
JP (1) JP5943999B2 (enExample)
KR (1) KR101591748B1 (enExample)
CN (1) CN103650109B (enExample)
TW (1) TWI506670B (enExample)
WO (1) WO2013012675A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
US20160253891A1 (en) * 2015-02-27 2016-09-01 Elwha Llc Device that determines that a subject may contact a sensed object and that warns of the potential contact
US10269601B2 (en) * 2015-10-20 2019-04-23 Applied Materials, Inc. Chamber leak and gas contaimination detection
BR112018010915B1 (pt) 2015-11-30 2022-11-22 Nextracker Inc Meio de gravação legível por computador, método e sistema de testes para testar um sistema elétrico e mecânico
US9963779B2 (en) 2016-02-29 2018-05-08 Goodrich Corporation Methods for modifying pressure differential in a chemical vapor process
US10777394B2 (en) * 2016-12-09 2020-09-15 Applied Materials, Inc. Virtual sensor for chamber cleaning endpoint
CN108256262B (zh) * 2018-02-07 2021-03-26 武汉科技大学 一种轴对称射流稳压腔参数设计的数值模拟方法
CN113534855B (zh) * 2020-04-14 2023-07-21 长鑫存储技术有限公司 一种机台气路流量调整系统及方法
JP7602350B2 (ja) * 2020-11-11 2024-12-18 株式会社堀場エステック 濃度制御システム、濃度制御方法、及び、濃度制御システム用プログラム
US12183550B2 (en) * 2021-02-26 2024-12-31 Taiwan Semiconductor Manufacturing Company Limited Wafer treatment system and method of treating wafer
US11955322B2 (en) * 2021-06-25 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Device for adjusting position of chamber and plasma process chamber including the same for semiconductor manufacturing
US20230048337A1 (en) * 2021-08-16 2023-02-16 Applied Materials, Inc. Prevention of contamination of substrates during pressure changes in processing systems
US20230062848A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device
US12130606B2 (en) * 2021-12-22 2024-10-29 Applied Materials, Inc. Disturbance compensation for substrate processing recipes
US20250140538A1 (en) * 2023-10-26 2025-05-01 Applied Materials, Inc. Model-driven pressure estimation
CN120060835A (zh) * 2025-04-28 2025-05-30 青岛思锐智能科技股份有限公司 一种原子层沉积反应腔室的气体压力控制系统、方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7437944B2 (en) 2003-12-04 2008-10-21 Applied Materials, Inc. Method and apparatus for pressure and mix ratio control
KR100874895B1 (ko) 2007-12-26 2008-12-19 (주)넥클 반도체 소자 제조에 적합한 진공압력 제어장치
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772501A (en) * 1995-10-12 1998-06-30 Gas Research Institute Indoor environmental conditioning system and method for controlling the circulation of non-conditioned air
JP2942239B2 (ja) * 1997-05-23 1999-08-30 キヤノン株式会社 排気方法及び排気装置、それを用いたプラズマ処理方法及びプラズマ処理装置
JP2001060578A (ja) * 1999-08-20 2001-03-06 Nec Corp 真空処理装置
JP2001257164A (ja) 2000-03-10 2001-09-21 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び圧力制御方法
JP2002091573A (ja) * 2000-09-19 2002-03-29 Toshiba Corp 圧力制御方法、処理装置および処理方法
US20050120805A1 (en) * 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
KR100697280B1 (ko) * 2005-02-07 2007-03-20 삼성전자주식회사 반도체 제조 설비의 압력 조절 방법
US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
JP5050369B2 (ja) * 2006-03-06 2012-10-17 東京エレクトロン株式会社 処理装置
US8014887B2 (en) * 2006-03-22 2011-09-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus
WO2010024036A1 (ja) * 2008-08-28 2010-03-04 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置のクリーニング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7437944B2 (en) 2003-12-04 2008-10-21 Applied Materials, Inc. Method and apparatus for pressure and mix ratio control
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
KR100874895B1 (ko) 2007-12-26 2008-12-19 (주)넥클 반도체 소자 제조에 적합한 진공압력 제어장치

Also Published As

Publication number Publication date
CN103650109B (zh) 2016-11-09
CN103650109A (zh) 2014-03-19
JP2014527286A (ja) 2014-10-09
WO2013012675A2 (en) 2013-01-24
WO2013012675A3 (en) 2013-04-25
TW201320148A (zh) 2013-05-16
US20130018500A1 (en) 2013-01-17
JP5943999B2 (ja) 2016-07-05
KR20140051949A (ko) 2014-05-02
TWI506670B (zh) 2015-11-01
US8880210B2 (en) 2014-11-04

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