JP2014526150A - エッジの保護されたバリアー性組立品 - Google Patents
エッジの保護されたバリアー性組立品 Download PDFInfo
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- JP2014526150A JP2014526150A JP2014524018A JP2014524018A JP2014526150A JP 2014526150 A JP2014526150 A JP 2014526150A JP 2014524018 A JP2014524018 A JP 2014524018A JP 2014524018 A JP2014524018 A JP 2014524018A JP 2014526150 A JP2014526150 A JP 2014526150A
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- assembly
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- electronic device
- barrier stack
- barrier
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
本開示によるアセンブリは、例えば、電子デバイス、例えば、光電池のような、ソーラーデバイスを含む。したがって、本開示は、光電池を備えたアセンブリを提供する。好適な光電池としては、太陽エネルギーを電気に変換する、それぞれ固有の吸収スペクトルを有する多様な材料で開発されたものが挙げられる。光電池の製造に使用される材料及びこれらの太陽光吸収帯の端波長の例としては、結晶性シリコン単接合(約400nm〜約1150nm)、非晶質シリコン単接合(約300nm〜約720nm)、リボンシリコン(約350nm〜約1150nm)、CIS(銅インジウムセレン化物)(約400nm〜約1300nm)、CIGS(銅インジウムガリウム二セレン化物)(約350nm〜約1100nm)、CdTe(約400nm〜約895nm)、GaAsマルチ接合(約350nm〜約1750nm)が挙げられる。これらの半導体材料の短い波長の左吸収帯端は、通常、300nm〜400nmの間である。特定の実施形態では、電子デバイスはCIGSセルである。一部の実施形態では、組立品が適用されるソーラーデバイス(例えば、光電池)は可撓性フィルム基材を備え、すなわち可撓性光起電装置を提供する。
本出願の目的のための融着手段とは、融着させることにより材料を接合する工程である。この工程は、しばしば、強固な接合を作るべく、圧力を用い、多くの場合、熱と組み合わせ、又は圧力のみで、また場合によってはフィラー材料と共に、材料を溶融して溶融材料プールを作り、それを冷却することで溶融接合点を形成することによって成される。組立品は、例えば超音波溶接やレーザー融着のような、既知の手法で融着することができる。融着点は、特に組立品のエッジの周り、あるいはエッジから5ミリメートル以内であることが重要である。一部の実施形態では、融着点は組立品の周辺部に位置し、あるいは組立品表面の周囲にフレームを形成してもよい。なぜならば、応力がエッジに集中しているとき、層間剥離は一般的にそこから始める場合が多いからである。一度、剥離が開始されると、エッジは多層積層物品の反対側に向かって進行し、最終的に層間界面全体の剥離が生じる。エッジにおいて層間剥離を停止することで、多層積層物品の各層の接着を保持し、ASTM D3330方法A「感圧テープの剥離接着のための標準試験方法」に従って測定したピール強度を20グラム/インチ(7.74N/m)より大きく維持することができる。
多層フィルムは、一般にバリアスタック及び耐候性シートを備え、いくつかの実施形態では基材も備える。バリアフィルムを形成する多層フィルムは、一般に、可視光及び赤外光に対して透過性である。本明細書で使用するとき、用語「可視光及び赤外線に対して透過性」は、垂直軸に沿って測定した際にスペクトルの可視光及び赤外線部分の範囲の平均透過率が少なくとも75%(一部の実施形態では少なくとも約80、85、90、92、95、97又は98%)であることを意味することができる。一部の実施形態では、可視光及び赤外線透過性組立品は、400nm〜1400nmの範囲の平均透過率が少なくとも約75%(一部の実施形態では少なくとも約80、85、90、92、95、97又は98%)である。可視光及び赤外線透過性組立品は、例えば、光電池による、可視光及び赤外線の吸収に関して干渉しないものである。一部の実施形態では、可視光及び赤外線透過性組立品は、光電池に有用である光の波長の範囲の平均透過率が少なくとも約75%(一部の実施形態では少なくとも約80、85、90、92、95、97又は98%)である。
本開示に記述される組立品は基材を備える。一般に、基材はポリマーフィルムである。本明細書においては、用語「ポリマー」は有機ホモポリマー及びコポリマー、並びに、例えば、相溶性のポリマーブレンドの共押出し、又はエステル交換反応を含む反応によって形成することのできるポリマー又はコポリマー、を含むように理解される。用語「ポリマー」及び「コポリマー」は、ランダム及びブロックコポリマーの両方を含む。
多層フィルムはバリアスタックを備える。バリアスタックは各種の構造から選ぶことができる。用語「バリアスタック」は酸素又は水の少なくとも1つに対してバリアとなるフィルムを指す。バリアスタックは、一般的に、用途により要求される特定のレベルの酸素及び水透過率を有するように選択される。一部の実施形態では、バリアスタックは、38℃及び相対湿度100%で約0.005g/m2/日未満、一部の実施形態では38℃及び相対湿度100%で約0.0005g/m2/日未満、一部の実施形態では38℃及び相対湿度100%で約0.00005g/m2/日未満の水蒸気透過率(WVTR)を有する。一部の実施形態では、バリアスタックは、50℃及び相対湿度100%で約0.05、0.005、0.0005又は0.00005g/m2/日未満、又は更に85℃及び相対湿度100%でも約0.005、0.0005、0.00005g/m2/日未満のWVTRを有する。一部の実施形態では、バリアスタックは、23℃及び90%相対湿度で約0.005g/m2/日未満、一部の実施形態では23℃及び相対湿度90%で約0.0005g/m2/日未満、一部の実施形態では23℃及び相対湿度90%で約0.00005g/m2/日未満の酸素透過率を有する。
本開示による組立品は耐候性シートを備え、その耐候性シートは単層又は多層であることができる。耐候性シートは、一般に可視光及び赤外光に対して透過性であり柔軟で、有機フィルム形成ポリマーを備える。耐候性シートを形成できる有用な材料としては、ポリエステル、ポリカーボネート、ポリエーテル、ポリイミド、ポリオレフィン、フルオロポリマー及びこれらの組み合わせが挙げられる。
感圧接着剤(「PSA」)を耐候性シートとバリアスタックとの間に使うことができる。PSAは、(1)侵襲性及び永続性のある粘着力、(2)指圧以下の圧力による接着力、(3)被着体を保持する充分な能力、及び(4)被着体からきれいに取り外すのに充分な結合力を含む特性を有することが、当業者には周知である。PSAとして良好に機能することが分かっている材料は、必要な粘弾性特性を示し、粘着、剥離接着、及び剪断保持力の所望のバランスをもたらすように設計並びに処方されたポリマーである。
場合により、本開示による組立品は、乾燥剤を含有することができる。一部の実施形態では、本開示による組立品は、乾燥剤を本質的に含まない。「乾燥剤を本質的に含まない」は、乾燥剤が存在し得るものの、光起電モジュールを効果的に乾燥させるには不十分な量であり得ることを意味する。乾燥剤を本質的に含まない組立品としては、乾燥剤が組立品に全く組み込まれていないものが挙げられる。
ポリマー層及び酸化物層を含む、エッジ融着したバリア組立品は、以下の方法で作製された。3M社から入手可能なバリアフィルム積層品「UBF 9L」の、寸法14.7×30.5センチメートル(6×12インチ)のシートを、コネチカット州DanburyのBranson Ultrasonics社から入手可能な超音波溶着ユニットを使用して超音波融着した。超音波ユニットは、3.8センチメートル(1.5インチ)のエアシリンダ断面積、1.5倍ゲインのブースターを装備した700ワット、40キロヘルツのシステム、900シリーズを用いた。バリア性積層体を溶接するにあたり、ミネソタ州St.PaulのPowell McGee Inc.社から入手可能なナーリングプロファイルを備えた超音波ホーン型109−108−585 P1561M 225を、上記の超音波ユニットと組み合わせて使用した。長さ15センチメートル(6インチ)、幅3ミリメートル(1/8インチ)の超音波溶接部が、様々なピーク電力パーセントにおいて、達成された。融着した積層品のT型剥離試験は、溶接部を、ミシガン州HollandのThermotron Industries社から市販されている、SE−1000−3型、湿度オーブンを用いて、500時間、85℃/85%相対湿度に露出させた後に、実行された。
超音波溶接なしの「UBF 9L」は、比較例として実施した。
AST D18776−08に従い、様々な超音波溶接のT型剥離試験を完了した。グリップ間の距離は12.7ミリメートルを用い、剥離速度は254ミリメートル/分(10インチ/分)を用いた。剥離力は2サンプルの平均値を記録した。(ただし、超音波溶接なしの場合は5サンプルの平均値を記録した。)サンプルは約3ミリメートル(1/8インチ)幅であるが、結果はlbs/インチ単位で報告する。
Claims (29)
- 電子デバイスと、
多層フィルムであって、
電子デバイスに隣接する基材と、
前記基材の電子デバイスと反対側に隣接するバリアスタックと、
前記基材と反対側にある前記バリアスタックに隣接する耐候性シートと、を備える、多層フィルムと、
を備え、
前記多層フィルムが融着されている、組立品。 - 前記バリアスタックがポリマー層と無機バリアー層を備える、請求項1に記載の組立品。
- 前記無機バリアー層が酸化物層である、請求項2に記載の組立品。
- 前記多層フィルムが透明で可撓性である、請求項1に記載の組立品。
- 前記耐候性シートと前記基材が融着されている、請求項1に記載の組立品。
- 前記バリアスタックが融着点において前記耐候性シートと前記基材との間にあることを特徴とする、請求項1に記載の組立品。
- エッジが超音波溶接されている、請求項1に記載の組立品。
- 前記エッジがレーザー融着されている、請求項1に記載の組立品。
- 前記電子デバイスがエッジ封止材を備える、請求項1に記載の組立品。
- 前記電子デバイスがバックシートを備える、請求項1に記載の組立品。
- 前記電子デバイスが封入材層を備える、請求項1に記載の組立品。
- 前記エッジ封止材がブチルゴムを含む、請求項9に記載の組立品。
- 前記耐候性シートが前記電子デバイスに融着されている、請求項1に記載の組立品。
- 前記基材が、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリエーテルエーテルケトン、ポリアリールエーテルケトン、ポリアクリレート、ポリエーテルイミド、ポリアリールスルホン、ポリエーテルスルホン、ポリアミドイミド、ポリイミドのうちの少なくとも一つを含む、請求項1に記載の組立品。
- 前記耐候性シートがフルオロポリマーを含む、請求項1に記載の組立品。
- 前記フルオロポリマーが、エチレン−テトラフルオロエチレンコポリマー、テトラフルオロエチレン−ヘキサフルオロプロピレンコポリマー、テトラフルオロエチレン−ヘキサフルオロプロピレン−ビニリデンフルオリドコポリマー、又はポリビニリデンフルオリドの少なくとも1つを含む、請求項15に記載の組立品。
- 前記耐候性シートと前記バリアスタックの間に感圧接着剤層を備える、請求項1に記載の組立品。
- 前記感圧接着剤がアクリレート、シリコン、ポリイソブチレン、ユリア、あるいはそれらのブレンドである、請求項17に記載の組立品。
- 前記感圧接着剤が、UV安定剤、ヒンダードアミン光安定剤、酸化防止剤、又は熱安定剤のうちの少なくとも1つを含む、請求項17に記載の組立品。
- 前記バリアスタック酸化物層が前記バリアスタックポリマー層とシロキサン結合を共有する、請求項1に記載の組立品。
- 前記電子デバイスが光電池である、請求項1に記載の組立品。
- 前記光電池がCIGS電池である、請求項21に記載の組立品。
- 前記基材が熱安定化されている、請求項1に記載の組立品。
- 前記バリアスタックが50℃、相対湿度100%においての水蒸気透過率が0.005cc/m2/日未満である、請求項1に記載の組立品。
- 前記バリアスタックが23℃、相対湿度90%においての酸素透過率が0.005cc/m2/日未満である、請求項1に記載の組立品。
- 前記バリアスタックが少なくとも2つの酸化物層を備える、請求項1に記載の組立品。
- 前記バリアスタックが少なくとも2つのポリマー層を備える、請求項1に記載の組立品。
- 前記電子デバイスがルーフを備える、請求項1に記載の組立品。
- 前記多層フィルムが前記組立品の周縁で融着されている、請求項1に記載の組立品。
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US201161515079P | 2011-08-04 | 2011-08-04 | |
US61/515,079 | 2011-08-04 | ||
PCT/US2012/048917 WO2013019763A1 (en) | 2011-08-04 | 2012-07-31 | Edge protected barrier assemblies |
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JP2014526150A true JP2014526150A (ja) | 2014-10-02 |
JP2014526150A5 JP2014526150A5 (ja) | 2017-01-05 |
JP6141842B2 JP6141842B2 (ja) | 2017-06-07 |
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EP (1) | EP2740326A4 (ja) |
JP (1) | JP6141842B2 (ja) |
KR (1) | KR20140051990A (ja) |
CN (1) | CN103733726B (ja) |
SG (1) | SG2014007884A (ja) |
TW (1) | TWI583557B (ja) |
WO (1) | WO2013019763A1 (ja) |
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CN103988578B (zh) | 2011-08-04 | 2017-07-21 | 3M创新有限公司 | 边缘受保护的阻隔组件 |
EP2809509A4 (en) | 2012-01-31 | 2015-09-23 | 3M Innovative Properties Co | METHOD FOR BORDER SEALING OF MULTILAYER ARTICLES |
EP2844464A4 (en) | 2012-05-03 | 2015-12-23 | 3M Innovative Properties Co | DURABLE SOLAR MIRROR FILMS |
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TW201315604A (zh) | 2013-04-16 |
EP2740326A1 (en) | 2014-06-11 |
CN103733726B (zh) | 2017-11-17 |
KR20140051990A (ko) | 2014-05-02 |
EP2740326A4 (en) | 2015-05-20 |
US20140230892A1 (en) | 2014-08-21 |
TWI583557B (zh) | 2017-05-21 |
JP6141842B2 (ja) | 2017-06-07 |
CN103733726A (zh) | 2014-04-16 |
WO2013019763A1 (en) | 2013-02-07 |
SG2014007884A (en) | 2014-03-28 |
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