JP2014520184A - ガリウム置換イットリウムアルミニウムガーネット蛍光体及びこれを含む発光デバイス - Google Patents
ガリウム置換イットリウムアルミニウムガーネット蛍光体及びこれを含む発光デバイス Download PDFInfo
- Publication number
- JP2014520184A JP2014520184A JP2014514501A JP2014514501A JP2014520184A JP 2014520184 A JP2014520184 A JP 2014520184A JP 2014514501 A JP2014514501 A JP 2014514501A JP 2014514501 A JP2014514501 A JP 2014514501A JP 2014520184 A JP2014520184 A JP 2014520184A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- emitting device
- light emitting
- light
- phosphor composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 209
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical class [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 title claims description 33
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 title claims description 32
- 239000000203 mixture Substances 0.000 claims abstract description 156
- 239000007787 solid Substances 0.000 claims abstract description 42
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims description 32
- 230000005855 radiation Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 238000010586 diagram Methods 0.000 claims description 16
- 229910052684 Cerium Inorganic materials 0.000 claims description 15
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000002596 correlated effect Effects 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 description 37
- 239000000463 material Substances 0.000 description 36
- 239000011248 coating agent Substances 0.000 description 34
- 239000000758 substrate Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000003086 colorant Substances 0.000 description 8
- 238000000103 photoluminescence spectrum Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 239000006069 physical mixture Substances 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001652 electrophoretic deposition Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910016066 BaSi Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004924 electrostatic deposition Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
【選択図】図5
Description
この材料は、構成酸化物:Y2O3、CeO2、Al2O3及びGa2O3の直接反応によって合成した。反応物は、Y2.9Ce0.1Al4.466Ga0.788O12+/-δ(Ce3.33モル%、Ga15モル%、R=0.57)をもたらすように秤量した。BaF2を添加し、全混合物の10重量%を構成するようにした。各成分を十分に混合した。次いで、混合物を坩堝に入れ、僅かに還元性雰囲気中で0〜12時間1450〜1650℃の範囲で加熱した。焼成後、試料を標準的な方法を用いて破砕、粉砕、及び篩分した。Ga置換YAG:Ce粉末は、以下で説明するように温白色のデバイスを生成するように選択された比率で(Ca1-xSrx)SiAlN3:Eu3+粉末と混合した。
材料は、Y2.9Ce0.1Al4.203Ga1.051O12+/-δ(Ce3.33モル%、Ga20モル%、R=0.57)の化学量論組成で実施例組成物1について記載したのと同様にして合成した。Ga置換YAG:Ce粉末は、以下で説明するような温白色のデバイスを生成するように選択された比率で、実施例組成物1で使用されたのと同じ(Ca1-xSrx)SiAlN3:Eu3+粉末と混合した。
YAG:Ce、LuAG:Ce、及び実施例組成物1で使用されたのと同じ(Ca1-xSrx)SiAlN3:Eu3+の物理的混合物を以下で説明するような温白色のデバイスを製造するように選択された比率で作製した。
32 基板/サブマウント
34 LEDチップ
36 電流拡散構造
37 導電性フィンガー
38 コンタクト
39 蛍光体組成物
40 上面
42 ダイ装着パッド
44 第1のコンタクトパッド
46 第2のコンタクトパッド
48 ギャップ
50 第1の表面マウントパッド
52 第2の表面マウントパッド
54 背面
56 導電性バイア
66 メタライズ領域
70 レンズ
110 LEDチップ
120 基板
122 第1のコンタクト
124 第2のコンタクト
128 導電性コンタクト基台
132 蛍光体組成物コーティング
Claims (35)
- 主蛍光体としてYaCebAlcGadOzを備えた蛍光体組成物であって、式中a、b、c、d及びzが正数であり、R=(a+b)/(c+d)且つ0.5<R<0.7である、蛍光体組成物。
- b/(a+b)=Ceモル%及び0<Ceモル%<10;及びd/(c+d)=Gaモル%及び0<Gaモル%<50である、請求項1に記載の蛍光体組成物。
- 2<Ceモル%<4;10<Gaモル%<30;及び0.5<R<0.6である、請求項2に記載の蛍光体組成物。
- zが公称的に12である、請求項2に記載の蛍光体組成物。
- 前記蛍光体組成物が、445nm〜470nmの範囲のピーク波長を有する放射波を500nm〜570nmの範囲のピーク波長を有する放射波にダウンコンバートする、請求項1に記載の蛍光体組成物。
- 二次蛍光体を更に備え、前記二次蛍光体が、445nm〜470nmの範囲のピーク波長を有する放射波を600nm〜660nmの範囲のピーク波長を有する放射波にダウンコンバートする、請求項5に記載の蛍光体組成物。
- 前記主蛍光体が、全蛍光体濃度の約50〜100重量パーセントである、請求項6に記載の蛍光体組成物。
- 前記二次蛍光体が、窒化物及び/又は酸窒化物蛍光体を含む、請求項6に記載の蛍光体組成物。
- 前記二次蛍光体が、(Ca1-xSrx)SiAlN3:Eu2+を含む、請求項8に記載の蛍光体組成物。
- 前記蛍光体組成物が、2〜25μmの範囲の平均粒径を有する粒子として存在する、請求項1の蛍光体組成物。
- 発光デバイスであって、
固体光源と、
イットリウムアルミニウムガーネット(YAG)蛍光体を含み、前記YAG蛍光体内に置換されたガリウムを有する蛍光体組成物と、を備える、発光デバイス。 - 前記固体光源が、III族窒化物発光源を含む、請求項11に記載の発光デバイス。
- 前記YAG蛍光体がセリウムでも置換される、請求項11に記載の発光デバイス。
- ガリウムで置換された前記YAG蛍光体が、YaCebAlcGadOzの化学式を有し、式中a、b、c、d及びzが正数であり、R=(a+b)/(c+d)及び0.5<R<0.7である、請求項11に記載の発光デバイス。
- b/(a+b)=Ceモル%及び0<Ceモル%<10;及びd/(c+d)=Gaモル%及び0<Gaモル%<50である、請求項14に記載の発光デバイス。
- 2<Ceモル%<4;10<Gaモル%<30;及び0.5<R≦0.6である、請求項15に記載の蛍光体組成物。
- zが公称的に12である、請求項15に記載の発光デバイス。
- 前記蛍光体組成物が、445nm〜470nmの範囲のピーク波長を有する放射波を500nm〜570nmの範囲のピーク波長を有する放射波にダウンコンバートする、請求項11に記載の発光デバイス。
- 前記蛍光体組成物が二次蛍光体を更に備え、前記二次蛍光体が、445nm〜470nmの範囲のピーク波長を有する放射波を600nm〜660nmの範囲のピーク波長を有する放射波にダウンコンバートする、請求項18に記載の蛍光体組成物。
- 前記主蛍光体が、全蛍光体濃度の約50〜100重量パーセントである、請求項19に記載の発光デバイス。
- 前記二次蛍光体が、窒化物又は酸窒化物蛍光体を含む、請求項19に記載の発光デバイス。
- 前記二次蛍光体が、(Ca1-xSrx)SiAlN3:Eu2+を含む、請求項21に記載の発光デバイス。
- 前記蛍光体組成物が更に、バインダを含む、請求項11に記載の発光デバイス。
- 前記蛍光体組成物が、2〜25μmの範囲の平均粒径を有する粒子として存在する、請求項11に記載の発光デバイス。
- 別個の二次蛍光体組成物を更に含み、前記蛍光体組成物と前記別個の二次蛍光体組成物とが組み合わさって、445nm〜470nmの範囲のピーク波長を有する放射波を600nm〜660nmの範囲のピーク波長を有する放射波にダウンコンバートするようになる、請求項11の発光デバイス。
- 前記蛍光体組成物が、単結晶蛍光体として存在する、請求項11に記載の発光デバイス。
- 前記蛍光体組成物が、前記固体光源によって放射された放射波の少なくとも一部を、580ナノメートルより長いピーク波長を有する放射波にダウンコンバートする、請求項11の発光デバイス。
- 前記蛍光体組成物が、前記固体光源によって放射された前記放射波の少なくとも一部を500ナノメートル〜570ナノメートルのピーク波長を有する放射波にダウンコンバートし、前記固体光源によって放射された前記放射波の少なくとも一部を600ナノメートル〜660ナノメートルのピーク波長を有する放射波にダウンコンバートする、請求項11に記載の発光デバイス。
- 前記固体光源が、青色域内のドミナント波長を有する光を放射する発光ダイオードを備える、請求項11に記載の発光デバイス。
- 前記青色LEDのドミナント波長が約445nm〜470nmである、請求項29に記載の発光デバイス。
- 前記発光デバイスが、約2500K〜4500Kの相関色温度を有する温白色光を放射する、請求項11に記載の発光デバイス。
- 前記発光デバイスが、約2500K〜3300Kの相関色温度を有する温白色光を放射する、請求項31に記載の発光デバイス。
- 前記発光デバイスが、少なくとも90のCRI値を有する、請求項31に記載の発光デバイス。
- 前記発光デバイスによって放射された前記光が、1931CIE色度図上の黒体軌跡の7マカダム楕円内部にある色点を有し、約2500K〜約3300Kの相関色温度を有する、請求項11に記載の発光デバイス。
- 前記発光デバイスが、50を超えるCRI R9成分を有する、請求項11に記載の発光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/154,872 US8747697B2 (en) | 2011-06-07 | 2011-06-07 | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
US13/154,872 | 2011-06-07 | ||
PCT/US2012/040093 WO2012170266A1 (en) | 2011-06-07 | 2012-05-31 | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014520184A true JP2014520184A (ja) | 2014-08-21 |
JP6134706B2 JP6134706B2 (ja) | 2017-05-24 |
Family
ID=46246227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014514501A Active JP6134706B2 (ja) | 2011-06-07 | 2012-05-31 | ガリウム置換イットリウムアルミニウムガーネット蛍光体及びこれを含む発光デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US8747697B2 (ja) |
EP (1) | EP2718397B1 (ja) |
JP (1) | JP6134706B2 (ja) |
CN (1) | CN103717705A (ja) |
TW (1) | TW201302984A (ja) |
WO (1) | WO2012170266A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020136672A (ja) * | 2019-02-21 | 2020-08-31 | シャープ株式会社 | 発光装置 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8853712B2 (en) | 2008-11-18 | 2014-10-07 | Cree, Inc. | High efficacy semiconductor light emitting devices employing remote phosphor configurations |
US20120305955A1 (en) * | 2011-05-31 | 2012-12-06 | Hussell Christopher P | Luminescent Particles, Methods and Light Emitting Devices Including the Same |
KR20130010283A (ko) * | 2011-07-18 | 2013-01-28 | 삼성전자주식회사 | 백색 발광 장치 및 이를 이용한 디스플레이 및 조명장치 |
US9330911B2 (en) * | 2011-08-22 | 2016-05-03 | Invenlux Limited | Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride |
KR20150035742A (ko) * | 2012-07-20 | 2015-04-07 | 미쓰비시 가가꾸 가부시키가이샤 | 발광 장치, 파장 변환 부재, 형광체 조성물 및 형광체 혼합물 |
US9447319B2 (en) * | 2012-12-14 | 2016-09-20 | Cree, Inc. | Yellow phosphor having an increased activator concentration and a method of making a yellow phosphor |
US9437788B2 (en) | 2012-12-19 | 2016-09-06 | Cree, Inc. | Light emitting diode (LED) component comprising a phosphor with improved excitation properties |
US9565782B2 (en) | 2013-02-15 | 2017-02-07 | Ecosense Lighting Inc. | Field replaceable power supply cartridge |
US9219202B2 (en) | 2013-04-19 | 2015-12-22 | Cree, Inc. | Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors |
US10074781B2 (en) * | 2013-08-29 | 2018-09-11 | Cree, Inc. | Semiconductor light emitting devices including multiple red phosphors that exhibit good color rendering properties with increased brightness |
US20150137163A1 (en) * | 2013-11-13 | 2015-05-21 | Nanoco Technologies Ltd. | LED Cap Containing Quantum Dot Phosphors |
EP3091585A4 (en) * | 2013-12-27 | 2017-07-26 | Citizen Electronics Co., Ltd | Light-emitting device and method for designing light emitting device |
CZ307024B6 (cs) * | 2014-05-05 | 2017-11-22 | Crytur, Spol.S R.O. | Světelný zdroj |
CN104212455B (zh) * | 2014-08-11 | 2016-06-15 | 浙江工业大学 | 一种Ce3+激活的石榴石结构荧光粉及其制备方法 |
US9331253B2 (en) * | 2014-09-03 | 2016-05-03 | Cree, Inc. | Light emitting diode (LED) component comprising a phosphor with improved excitation properties |
JP6455817B2 (ja) * | 2014-09-12 | 2019-01-23 | パナソニックIpマネジメント株式会社 | 照明装置 |
US11306897B2 (en) | 2015-02-09 | 2022-04-19 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
US9869450B2 (en) | 2015-02-09 | 2018-01-16 | Ecosense Lighting Inc. | Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector |
CN107251244B (zh) * | 2015-02-23 | 2019-12-03 | 亮锐控股有限公司 | 具有相对于温度稳定的通量输出的白色磷光体转换led |
US9568665B2 (en) | 2015-03-03 | 2017-02-14 | Ecosense Lighting Inc. | Lighting systems including lens modules for selectable light distribution |
US9746159B1 (en) | 2015-03-03 | 2017-08-29 | Ecosense Lighting Inc. | Lighting system having a sealing system |
US9651216B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting systems including asymmetric lens modules for selectable light distribution |
US9651227B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Low-profile lighting system having pivotable lighting enclosure |
USD785218S1 (en) | 2015-07-06 | 2017-04-25 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
US9651232B1 (en) | 2015-08-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting system having a mounting device |
US10026876B2 (en) * | 2015-08-20 | 2018-07-17 | Nichia Corporation | Light emitting device |
US10512133B2 (en) | 2016-01-28 | 2019-12-17 | Ecosense Lighting Inc. | Methods of providing tunable warm white light |
WO2017131697A1 (en) | 2016-01-28 | 2017-08-03 | Ecosense Lighting Inc | Systems for providing tunable white light with high color rendering |
CN109315037B (zh) | 2016-01-28 | 2022-07-01 | 生态照明公司 | 用于提供具有高显色性的可调白光的系统 |
JP7022931B2 (ja) * | 2018-01-31 | 2022-02-21 | パナソニックIpマネジメント株式会社 | 蛍光体および発光装置 |
JP6741244B2 (ja) * | 2019-07-11 | 2020-08-19 | 株式会社光波 | 発光装置 |
US20230066523A1 (en) * | 2020-01-31 | 2023-03-02 | Lg Electronics Inc. | Color wheel |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242513A (ja) * | 1996-07-29 | 1998-09-11 | Nichia Chem Ind Ltd | 発光ダイオード及びそれを用いた表示装置 |
JP2006049799A (ja) * | 2004-04-27 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 発光装置 |
WO2009028657A1 (ja) * | 2007-08-30 | 2009-03-05 | Nichia Corporation | 発光装置 |
WO2011020756A1 (de) * | 2009-08-17 | 2011-02-24 | Osram Gesellschaft mit beschränkter Haftung | Konversions-led mit hoher farbwiedergabe |
WO2011020751A1 (de) * | 2009-08-17 | 2011-02-24 | Osram Gesellschaft mit beschränkter Haftung | Konversions-led mit hoher effizienz |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01242688A (ja) * | 1988-03-23 | 1989-09-27 | Nichia Chem Ind Ltd | 蛍光体及びその製造方法 |
US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5359345A (en) | 1992-08-05 | 1994-10-25 | Cree Research, Inc. | Shuttered and cycled light emitting diode display and method of producing the same |
US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US6600175B1 (en) | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
EP2267801B1 (de) * | 1996-06-26 | 2015-05-27 | OSRAM Opto Semiconductors GmbH | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US6700322B1 (en) * | 2000-01-27 | 2004-03-02 | General Electric Company | Light source with organic layer and photoluminescent layer |
US6515314B1 (en) * | 2000-11-16 | 2003-02-04 | General Electric Company | Light-emitting device with organic layer doped with photoluminescent material |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US20050218780A1 (en) * | 2002-09-09 | 2005-10-06 | Hsing Chen | Method for manufacturing a triple wavelengths white LED |
ATE543221T1 (de) | 2002-09-19 | 2012-02-15 | Cree Inc | Leuchtstoffbeschichtete leuchtdioden mit verjüngten seitenwänden und herstellungsverfahren dafür |
US7038370B2 (en) | 2003-03-17 | 2006-05-02 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting device |
US7095056B2 (en) | 2003-12-10 | 2006-08-22 | Sensor Electronic Technology, Inc. | White light emitting device and method |
KR101041311B1 (ko) * | 2004-04-27 | 2011-06-14 | 파나소닉 주식회사 | 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을 이용한 발광장치 |
US7456499B2 (en) | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
JP4645089B2 (ja) * | 2004-07-26 | 2011-03-09 | 日亜化学工業株式会社 | 発光装置および蛍光体 |
CN101072844A (zh) | 2004-12-07 | 2007-11-14 | 皇家飞利浦电子股份有限公司 | 包括辐射源和发光材料的照明系统 |
EP1837386B1 (en) * | 2004-12-28 | 2016-11-23 | Nichia Corporation | Nitride phosphor, method for producing same and light-emitting device using nitride phosphor |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
US20090008663A1 (en) * | 2005-02-28 | 2009-01-08 | Mitshubishi Chemcial | Phosphor and method for production thereof, and application thereof |
US20060221272A1 (en) | 2005-04-04 | 2006-10-05 | Negley Gerald H | Light emitting diode backlighting systems and methods that use more colors than display picture elements |
US8563339B2 (en) | 2005-08-25 | 2013-10-22 | Cree, Inc. | System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices |
US7847302B2 (en) | 2005-08-26 | 2010-12-07 | Koninklijke Philips Electronics, N.V. | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
US7213940B1 (en) | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
CN103925521A (zh) | 2005-12-21 | 2014-07-16 | 科锐公司 | 照明装置 |
CN101473453B (zh) | 2006-01-20 | 2014-08-27 | 科锐公司 | 通过在空间上隔开荧光片转换固态光发射器内的光谱内容 |
KR100728940B1 (ko) | 2006-03-10 | 2007-06-14 | (주)케이디티 | 광여기 시트 |
US7655957B2 (en) | 2006-04-27 | 2010-02-02 | Cree, Inc. | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
US8044418B2 (en) | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
US7960819B2 (en) | 2006-07-13 | 2011-06-14 | Cree, Inc. | Leadframe-based packages for solid state emitting devices |
JP5367218B2 (ja) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
US20080149166A1 (en) * | 2006-12-21 | 2008-06-26 | Goldeneye, Inc. | Compact light conversion device and light source with high thermal conductivity wavelength conversion material |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US7952544B2 (en) | 2007-02-15 | 2011-05-31 | Cree, Inc. | Partially filterless liquid crystal display devices and methods of operating the same |
US20080283864A1 (en) | 2007-05-16 | 2008-11-20 | Letoquin Ronan P | Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices |
US7999283B2 (en) | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
US7802901B2 (en) | 2007-09-25 | 2010-09-28 | Cree, Inc. | LED multi-chip lighting units and related methods |
EP2210036B1 (en) | 2007-10-10 | 2016-11-23 | Cree, Inc. | Lighting device and method of making |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
JP5307881B2 (ja) * | 2008-03-26 | 2013-10-02 | パナソニック株式会社 | 半導体発光装置 |
US20090283721A1 (en) | 2008-05-19 | 2009-11-19 | Intematix Corporation | Nitride-based red phosphors |
US20100289044A1 (en) | 2009-05-12 | 2010-11-18 | Koninklijke Philips Electronics N.V. | Wavelength conversion for producing white light from high power blue led |
US8461535B2 (en) * | 2009-05-20 | 2013-06-11 | Lawrence Livermore National Security, Llc | Phase stable rare earth garnets |
US8643038B2 (en) | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
-
2011
- 2011-06-07 US US13/154,872 patent/US8747697B2/en active Active
-
2012
- 2012-05-30 TW TW101119305A patent/TW201302984A/zh unknown
- 2012-05-31 JP JP2014514501A patent/JP6134706B2/ja active Active
- 2012-05-31 WO PCT/US2012/040093 patent/WO2012170266A1/en unknown
- 2012-05-31 CN CN201280038649.1A patent/CN103717705A/zh active Pending
- 2012-05-31 EP EP12726990.0A patent/EP2718397B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242513A (ja) * | 1996-07-29 | 1998-09-11 | Nichia Chem Ind Ltd | 発光ダイオード及びそれを用いた表示装置 |
JP2006049799A (ja) * | 2004-04-27 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 発光装置 |
WO2009028657A1 (ja) * | 2007-08-30 | 2009-03-05 | Nichia Corporation | 発光装置 |
WO2011020756A1 (de) * | 2009-08-17 | 2011-02-24 | Osram Gesellschaft mit beschränkter Haftung | Konversions-led mit hoher farbwiedergabe |
WO2011020751A1 (de) * | 2009-08-17 | 2011-02-24 | Osram Gesellschaft mit beschränkter Haftung | Konversions-led mit hoher effizienz |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020136672A (ja) * | 2019-02-21 | 2020-08-31 | シャープ株式会社 | 発光装置 |
US11482833B2 (en) | 2019-02-21 | 2022-10-25 | Sharp Kabushiki Kaisha | Light emitting device |
Also Published As
Publication number | Publication date |
---|---|
EP2718397A1 (en) | 2014-04-16 |
JP6134706B2 (ja) | 2017-05-24 |
EP2718397B1 (en) | 2018-04-25 |
WO2012170266A1 (en) | 2012-12-13 |
CN103717705A (zh) | 2014-04-09 |
US20120313124A1 (en) | 2012-12-13 |
TW201302984A (zh) | 2013-01-16 |
US8747697B2 (en) | 2014-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6134706B2 (ja) | ガリウム置換イットリウムアルミニウムガーネット蛍光体及びこれを含む発光デバイス | |
US8643038B2 (en) | Warm white LEDs having high color rendering index values and related luminophoric mediums | |
US8814621B2 (en) | Methods of determining and making red nitride compositions | |
US8921875B2 (en) | Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods | |
US10074781B2 (en) | Semiconductor light emitting devices including multiple red phosphors that exhibit good color rendering properties with increased brightness | |
US20140167601A1 (en) | Enhanced Luminous Flux Semiconductor Light Emitting Devices Including Red Phosphors that Exhibit Good Color Rendering Properties and Related Red Phosphors | |
US9220149B2 (en) | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources | |
US8906263B2 (en) | Red nitride phosphors | |
US10541353B2 (en) | Light emitting devices including narrowband converters for outdoor lighting applications | |
US9219202B2 (en) | Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors | |
US9318669B2 (en) | Methods of determining and making red nitride compositions | |
US20110220920A1 (en) | Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices | |
US9219201B1 (en) | Blue light emitting devices that include phosphor-converted blue light emitting diodes | |
JP2009094517A (ja) | 複数変換材料発光ダイオードパッケージおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140710 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150608 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150908 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20151005 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160205 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160408 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20160428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170306 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170424 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6134706 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |