JP2014518944A - １１族モノ金属前駆化合物およびその金属堆積における使用 - Google Patents

１１族モノ金属前駆化合物およびその金属堆積における使用 Download PDF

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Publication number
JP2014518944A
JP2014518944A JP2014510625A JP2014510625A JP2014518944A JP 2014518944 A JP2014518944 A JP 2014518944A JP 2014510625 A JP2014510625 A JP 2014510625A JP 2014510625 A JP2014510625 A JP 2014510625A JP 2014518944 A JP2014518944 A JP 2014518944A
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Prior art keywords
compound
precursor
metal
optionally substituted
copper
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Japanese (ja)
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JP2014518944A5 (https=
Inventor
ショーン・バリー
ジェイソン・コイル
ティモシー・ジェームズ・クラーク
ジェフリー・ジェイ・エム・ハスティー
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Greencentre Canada
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Greencentre Canada
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014510625A 2011-05-13 2012-05-04 １１族モノ金属前駆化合物およびその金属堆積における使用 Pending JP2014518944A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161485912P 2011-05-13 2011-05-13
US61/485,912 2011-05-13
US201161552169P 2011-10-27 2011-10-27
US61/552,169 2011-10-27
PCT/CA2012/050296 WO2012155264A1 (en) 2011-05-13 2012-05-04 Group 11 mono-metallic precursor compounds and use thereof in metal deposition

Publications (2)

Publication Number Publication Date
JP2014518944A true JP2014518944A (ja) 2014-08-07
JP2014518944A5 JP2014518944A5 (https=) 2015-07-30

Family

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JP2014510625A Pending JP2014518944A (ja) 2011-05-13 2012-05-04 １１族モノ金属前駆化合物およびその金属堆積における使用

Country Status (7)

Country Link
US (2) US9453036B2 (https=)
EP (1) EP2707375A4 (https=)
JP (1) JP2014518944A (https=)
KR (1) KR20140049988A (https=)
CA (1) CA2834809A1 (https=)
TW (1) TW201249854A (https=)
WO (1) WO2012155264A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210158678A (ko) * 2020-06-24 2021-12-31 솔브레인 주식회사 박막 형성용 프리커서, 이의 제조방법 및 이를 포함하는 박막 제조 방법
WO2025197782A1 (ja) * 2024-03-22 2025-09-25 株式会社Adeka 薄膜の製造方法及び原子層堆積法用薄膜形成用原料

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
CN101802254B (zh) * 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
KR101589777B1 (ko) * 2008-08-01 2016-01-28 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 기재 상에 탄탈-함유 층의 형성 방법
US20110293830A1 (en) 2010-02-25 2011-12-01 Timo Hatanpaa Precursors and methods for atomic layer deposition of transition metal oxides
CA2834809A1 (en) * 2011-05-13 2012-11-22 Greencentre Canada Group 11 mono-metallic precursor compounds and use thereof in metal deposition
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) * 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
SG11201700569VA (en) 2014-07-24 2017-02-27 Basf Se Process for the generation of thin inorganic films
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9373561B1 (en) 2014-12-18 2016-06-21 International Business Machines Corporation Integrated circuit barrierless microfluidic channel
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
KR102720323B1 (ko) * 2015-11-24 2024-10-22 바스프 에스이 얇은 무기 필름의 생성 방법
US10570514B2 (en) 2015-11-30 2020-02-25 Basf Se Process for the generation of metallic films
KR102720328B1 (ko) * 2015-11-30 2024-10-22 바스프 에스이 금속 필름의 생성을 위한 방법
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
SG11201900607WA (en) 2016-08-31 2019-03-28 Basf Se Process for the generation of thin inorganic films
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10145009B2 (en) * 2017-01-26 2018-12-04 Asm Ip Holding B.V. Vapor deposition of thin films comprising gold
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
CN111051570B (zh) 2017-09-06 2022-05-10 默克专利股份有限公司 具有改善的热稳定性可用作硬掩膜的含旋涂式无机氧化物的组合物和填充材料
US10854459B2 (en) 2017-09-28 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure passivating species drive-in method and structure formed thereby
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10468258B1 (en) * 2018-06-12 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Passivator for gate dielectric
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) * 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11462626B2 (en) 2019-10-29 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
KR102557282B1 (ko) * 2020-12-21 2023-07-20 주식회사 한솔케미칼 신규 화합물, 이를 포함하는 전구체 조성물, 및 이를 이용한 박막의 제조방법
KR20220164161A (ko) * 2021-06-04 2022-12-13 주성엔지니어링(주) 박막 증착 방법
WO2023201437A1 (en) * 2022-04-21 2023-10-26 Queen's University At Kingston Method of selective deposition of small molecules on metal surfaces
US12577667B2 (en) * 2024-03-29 2026-03-17 Applied Materials, Inc. Cyclic alkyl amino carbene (CAAC) deposition by transmetallation
US20250308884A1 (en) * 2024-03-29 2025-10-02 Applied Materials, Inc. In situ acyclic diamino carbene (adc) deposition

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006012294A2 (en) * 2004-06-25 2006-02-02 Arkema Inc. Chemical vapor deposition with nucleophilic stable carbene-containing precursors
JP2006161162A (ja) * 2004-12-08 2006-06-22 Rohm & Haas Electronic Materials Llc 供給装置
JP2007297347A (ja) * 2006-05-02 2007-11-15 Ube Ind Ltd 置換フェニルエチニル銅−含窒素へテロ環カルベン錯体及びそれを用いた有機エレクトロルミネッセンス素子
US20090004385A1 (en) * 2007-06-29 2009-01-01 Blackwell James M Copper precursors for deposition processes
JP2009532579A (ja) * 2006-03-30 2009-09-10 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ又はａｌｄのための化学分配装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60330896D1 (de) 2002-11-15 2010-02-25 Harvard College Atomlagenabscheidung (ald) mit hilfe von metallamidinaten
US20090162550A1 (en) 2006-06-02 2009-06-25 Advanced Technology Materials, Inc. Copper (i) amidinates and guanidinates, mixed ligand copper complexes, and compositions for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition of copper
WO2008085426A1 (en) 2006-12-28 2008-07-17 Air Products And Chemicals, Inc. Volatile liquid copper precursors for thin film applications
CA2834809A1 (en) * 2011-05-13 2012-11-22 Greencentre Canada Group 11 mono-metallic precursor compounds and use thereof in metal deposition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006012294A2 (en) * 2004-06-25 2006-02-02 Arkema Inc. Chemical vapor deposition with nucleophilic stable carbene-containing precursors
JP2006161162A (ja) * 2004-12-08 2006-06-22 Rohm & Haas Electronic Materials Llc 供給装置
JP2009532579A (ja) * 2006-03-30 2009-09-10 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ又はａｌｄのための化学分配装置
JP2007297347A (ja) * 2006-05-02 2007-11-15 Ube Ind Ltd 置換フェニルエチニル銅−含窒素へテロ環カルベン錯体及びそれを用いた有機エレクトロルミネッセンス素子
US20090004385A1 (en) * 2007-06-29 2009-01-01 Blackwell James M Copper precursors for deposition processes

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210158678A (ko) * 2020-06-24 2021-12-31 솔브레인 주식회사 박막 형성용 프리커서, 이의 제조방법 및 이를 포함하는 박막 제조 방법
CN115702257A (zh) * 2020-06-24 2023-02-14 秀博瑞殷株式公社 薄膜形成用前体、其制备方法以及包含其的薄膜制备方法
JP2023530354A (ja) * 2020-06-24 2023-07-14 ソウルブレイン シーオー．， エルティーディー． 薄膜形成用プリカーサ、その製造方法、及びそれを含む薄膜製造方法
JP7637705B2 (ja) 2020-06-24 2025-02-28 ソウルブレイン シーオー．， エルティーディー． 薄膜形成用プリカーサ、その製造方法、及びそれを含む薄膜製造方法
KR102898793B1 (ko) 2020-06-24 2025-12-18 솔브레인 주식회사 박막 형성용 프리커서, 이의 제조방법 및 이를 포함하는 박막 제조 방법
WO2025197782A1 (ja) * 2024-03-22 2025-09-25 株式会社Adeka 薄膜の製造方法及び原子層堆積法用薄膜形成用原料

Also Published As

Publication number Publication date
US9453036B2 (en) 2016-09-27
EP2707375A1 (en) 2014-03-19
EP2707375A4 (en) 2015-01-07
WO2012155264A1 (en) 2012-11-22
KR20140049988A (ko) 2014-04-28
TW201249854A (en) 2012-12-16
CA2834809A1 (en) 2012-11-22
US20170073361A1 (en) 2017-03-16
US20120323008A1 (en) 2012-12-20

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