JP2014515882A - ガス分配プレート表面を改修するための方法及び装置 - Google Patents
ガス分配プレート表面を改修するための方法及び装置 Download PDFInfo
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- JP2014515882A JP2014515882A JP2014505216A JP2014505216A JP2014515882A JP 2014515882 A JP2014515882 A JP 2014515882A JP 2014505216 A JP2014505216 A JP 2014505216A JP 2014505216 A JP2014505216 A JP 2014505216A JP 2014515882 A JP2014515882 A JP 2014515882A
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- gas distribution
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- 238000009826 distribution Methods 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000005498 polishing Methods 0.000 claims abstract description 127
- 238000009420 retrofitting Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 31
- 238000004140 cleaning Methods 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 126
- 239000002245 particle Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 239000008367 deionised water Substances 0.000 description 17
- 229910021641 deionized water Inorganic materials 0.000 description 17
- 239000006227 byproduct Substances 0.000 description 15
- 230000003746 surface roughness Effects 0.000 description 14
- 239000002002 slurry Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 238000007517 polishing process Methods 0.000 description 9
- 238000009419 refurbishment Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910017077 AlFx Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000002715 modification method Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 PTFA Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009418 renovation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85938—Non-valved flow dividers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Drying Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本明細書内に記載される実施形態は、概して、ガス分配プレート表面などの半導体処理チャンバコンポーネントの表面を改修して、未使用又は未使用に近い状態に表面を復元することに関する。
半導体基板などの基板上への電子デバイスの製造においては、複数の処理工程が利用される。例えば、堆積及びエッチングプロセスが基板上で行われる。ガスがチャンバに流され、基板の上方に位置するガス分配プレートを通過する。ガスが熱的に又はプラズマの形成によって解離して、基板に材料を堆積又は基板から材料を除去する処理領域が、ガス分配プレートと基板の間に形成される。
Claims (20)
- ガス分配プレートアセンブリを改修するための方法であって、
複数のガス分配孔が内部に配置された、ガス分配プレートアセンブリのフェイスプレートを、研磨装置の研磨パッドに対して付勢する工程と、
フェイスプレートと研磨パッドの間に相対運動を提供する工程と、
研磨パッドでフェイスプレートを研磨する工程を含む方法。 - ガス分配孔をブロッカー材料で充填する工程を含む請求項1記載の方法。
- 研磨中、研磨パッドに向かう方向に複数のガス分配孔を通して流体を流す工程を含む請求項1記載の方法。
- ブロッカー材料は、研磨前に硬化される請求項2記載の方法。
- フェイスプレートは、研磨中にガス分配プレートアセンブリの本体に結合される請求項1記載の方法。
- 溶剤にブロッカー材料をさらすことによって、研磨後にブロッカー材料を除去する工程を含む請求項2記載の方法。
- 洗浄した後、ガス分配プレートアセンブリの本体にフェイスプレートを接着する工程を含む請求項6記載の方法。
- 研磨された基板を熱処理する工程を含む請求項1記載の方法。
- ガス分配プレートアセンブリを改修するための方法であって、
ガス分配プレートアセンブリの本体からフェイスプレートの第1の主面をデボンディングする工程と、
約6マイクロインチ又はより滑らかな表面仕上げにフェイスプレートの第2の主面を研磨する工程と、
研磨されたフェイスプレートを真空環境下で熱処理する工程を含む方法。 - 熱処理する工程が、フェイスプレートを摂氏約1200度〜約1300度に加熱する工程を含む請求項9記載の方法。
- フェイスプレート内の複数のガス分配孔をブロッカー材料で充填する工程と、
複数のガス分配孔内に配置されたブロッカー材料を硬化させる工程を含む請求項9記載の方法。 - 研磨後にブロッカー材料を溶剤で溶解させる工程を含む請求項11記載の方法。
- フェイスプレートの第1の主面及び第2の主面にブロッカー材料を付ける工程を含む請求項10記載の方法。
- 熱処理前に、研磨されたフェイスプレートを酸性浴内で洗浄する工程を含む請求項9記載の方法。
- デボンディングする工程が、本体からフェイスプレートを化学的にデボンディングする工程を含む請求項9記載の方法。
- 洗浄した後、ガス分配プレートアセンブリの本体にフェイスプレートの第1の主面を接着する工程を含む請求項15記載の方法。
- 第1面と第2面を有し、第1の複数のガス分配孔が内部に配置された本体と、
本体の第2面に結合されたフェイスプレートであって、フェイスプレートは、内部に配置され、本体内の第1の複数のガス分配孔と同心に揃った第2の複数のガス分配孔を有し、フェイスプレートは本体から離れて対向する熱処理された表面を有し、熱処理された表面は6マイクロインチ又はより滑らかな表面仕上げを有するフェイスプレートを含むガス分配プレートアセンブリ。 - 熱処理された表面が4マイクロインチ又はより滑らかな表面仕上げを有する請求項17記載のガス分配プレートアセンブリ。
- 熱処理された表面がプラズマ照射の証拠を有する請求項17記載のガス分配プレートアセンブリ。
- アルミニウム本体に接着された請求項9記載のフェイスプレートを含み、アルミニウム本体とフェイスプレートは整列したガス分配孔を有するガス分配プレートアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201161474235P | 2011-04-11 | 2011-04-11 | |
US61/474,235 | 2011-04-11 | ||
PCT/US2012/032915 WO2012142035A2 (en) | 2011-04-11 | 2012-04-10 | Method and apparatus for refurbishing gas distribution plate surfaces |
Publications (2)
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JP2014515882A true JP2014515882A (ja) | 2014-07-03 |
JP6050317B2 JP6050317B2 (ja) | 2016-12-21 |
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JP2014505216A Expired - Fee Related JP6050317B2 (ja) | 2011-04-11 | 2012-04-10 | ガス分配プレート表面を改修するための方法及び装置 |
Country Status (6)
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US (1) | US20120255635A1 (ja) |
JP (1) | JP6050317B2 (ja) |
KR (1) | KR101908615B1 (ja) |
CN (1) | CN103460344B (ja) |
TW (1) | TWI613714B (ja) |
WO (1) | WO2012142035A2 (ja) |
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KR101596930B1 (ko) * | 2015-01-12 | 2016-02-23 | 주식회사 싸이노스 | 세정장치 |
CN105058225A (zh) * | 2015-07-07 | 2015-11-18 | 武汉新芯集成电路制造有限公司 | 研磨垫固定装置及化学机械研磨装置 |
KR102251209B1 (ko) * | 2016-06-15 | 2021-05-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 고 전력 플라즈마 에칭 프로세스들을 위한 가스 분배 플레이트 조립체 |
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KR20210152072A (ko) * | 2020-06-05 | 2021-12-15 | 삼성디스플레이 주식회사 | 기상 젯 증착 장치 및 기상 젯 노즐 유닛의 제조 방법 |
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KR20140019812A (ko) | 2014-02-17 |
JP6050317B2 (ja) | 2016-12-21 |
WO2012142035A2 (en) | 2012-10-18 |
TW201241902A (en) | 2012-10-16 |
WO2012142035A3 (en) | 2013-01-17 |
CN103460344B (zh) | 2018-01-26 |
KR101908615B1 (ko) | 2018-10-16 |
US20120255635A1 (en) | 2012-10-11 |
CN103460344A (zh) | 2013-12-18 |
TWI613714B (zh) | 2018-02-01 |
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