JP2014513850A - 小さな論理グループがアクティブなslcおよびmlcメモリパーティションに分散させられる不揮発性メモリおよび方法 - Google Patents
小さな論理グループがアクティブなslcおよびmlcメモリパーティションに分散させられる不揮発性メモリおよび方法 Download PDFInfo
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- JP2014513850A JP2014513850A JP2014511418A JP2014511418A JP2014513850A JP 2014513850 A JP2014513850 A JP 2014513850A JP 2014511418 A JP2014511418 A JP 2014511418A JP 2014511418 A JP2014511418 A JP 2014511418A JP 2014513850 A JP2014513850 A JP 2014513850A
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- data
- memory
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- volatile memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
- G06F3/0611—Improving I/O performance in relation to response time
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/068—Hybrid storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7202—Allocation control and policies
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7205—Cleaning, compaction, garbage collection, erase control
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161487234P | 2011-05-17 | 2011-05-17 | |
US61/487,234 | 2011-05-17 | ||
US13/468,720 US20120297121A1 (en) | 2011-05-17 | 2012-05-10 | Non-Volatile Memory and Method with Small Logical Groups Distributed Among Active SLC and MLC Memory Partitions |
US13/468,720 | 2012-05-10 | ||
PCT/US2012/037511 WO2012158514A1 (en) | 2011-05-17 | 2012-05-11 | Non-volatile memory and method with small logical groups distributed among active slc and mlc memory partitions |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014513850A true JP2014513850A (ja) | 2014-06-05 |
Family
ID=47177278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014511418A Pending JP2014513850A (ja) | 2011-05-17 | 2012-05-11 | 小さな論理グループがアクティブなslcおよびmlcメモリパーティションに分散させられる不揮発性メモリおよび方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2710475A1 (ko) |
JP (1) | JP2014513850A (ko) |
KR (1) | KR20140040137A (ko) |
CN (1) | CN103688246A (ko) |
TW (1) | TW201305817A (ko) |
WO (1) | WO2012158514A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016506579A (ja) * | 2012-12-26 | 2016-03-03 | ウェスタン デジタル テクノロジーズ インコーポレーテッド | データストレージシステム向けの優先度に基づくガベージコレクション |
JP2017027540A (ja) * | 2015-07-28 | 2017-02-02 | 株式会社東芝 | 半導体装置及び電子機器 |
JP2017538981A (ja) * | 2015-11-27 | 2017-12-28 | 華為技術有限公司Huawei Technologies Co.,Ltd. | ストレージデバイスによってデータを記憶するための方法およびストレージデバイス |
Families Citing this family (33)
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US8924636B2 (en) * | 2012-02-23 | 2014-12-30 | Kabushiki Kaisha Toshiba | Management information generating method, logical block constructing method, and semiconductor memory device |
WO2014105829A2 (en) * | 2012-12-31 | 2014-07-03 | Sandisk Technologies Inc. | Method and system for asynchronous die operations in a non-volatile memory |
IN2013CH05362A (ko) | 2013-11-21 | 2015-05-29 | Sandisk Technologies Inc | |
US9632880B2 (en) | 2013-12-26 | 2017-04-25 | Silicon Motion, Inc. | Data storage device and flash memory control method |
KR102292172B1 (ko) | 2014-06-23 | 2021-08-25 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 메모리 컨트롤러의 동작 방법 |
KR20160070920A (ko) | 2014-12-10 | 2016-06-21 | 에스케이하이닉스 주식회사 | 맵 테이블을 갖는 컨트롤러 및 반도체 메모리 장치를 포함하는 메모리 시스템 및 그것의 동작 방법 |
CN105843748B (zh) * | 2015-01-15 | 2019-06-11 | 华为技术有限公司 | 一种对内存中内存页的处理方法及装置 |
US9824092B2 (en) | 2015-06-16 | 2017-11-21 | Microsoft Technology Licensing, Llc | File storage system including tiers |
KR20170059658A (ko) | 2015-11-23 | 2017-05-31 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작방법 |
KR20170078307A (ko) | 2015-12-29 | 2017-07-07 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작방법 |
CN105677242B (zh) * | 2015-12-31 | 2018-11-30 | 杭州华为数字技术有限公司 | 冷热数据的分离方法和装置 |
CN105760114B (zh) * | 2016-02-05 | 2020-07-03 | 浪潮(北京)电子信息产业有限公司 | 一种并行文件系统资源管理方法、装置和系统 |
US10185658B2 (en) * | 2016-02-23 | 2019-01-22 | Sandisk Technologies Llc | Efficient implementation of optimized host-based garbage collection strategies using xcopy and multiple logical stripes |
TWI606336B (zh) | 2016-04-21 | 2017-11-21 | 慧榮科技股份有限公司 | 儲存裝置及其控制單元、可用於儲存裝置的資料儲存方法 |
US11126544B2 (en) | 2016-12-14 | 2021-09-21 | Via Technologies, Inc. | Method and apparatus for efficient garbage collection based on access probability of data |
US10209914B2 (en) * | 2017-01-31 | 2019-02-19 | Sandisk Technologies Llc | System and method for dynamic folding or direct write based on block health in a non-volatile memory system |
US10380018B2 (en) * | 2017-04-04 | 2019-08-13 | Micron Technology, Inc. | Garbage collection |
US10109361B1 (en) * | 2017-06-29 | 2018-10-23 | Intel Corporation | Coarse pass and fine pass multi-level NVM programming |
CN109634516B (zh) * | 2017-10-09 | 2024-05-24 | 北京握奇智能科技有限公司 | 一种芯片存储器的读、写数据方法及系统 |
US10691358B2 (en) * | 2018-06-14 | 2020-06-23 | Silicon Motion, Inc. | Memory controller and method capable of using different storing modes to store data units having different data sizes |
CN110955384B (zh) * | 2018-09-26 | 2023-04-18 | 慧荣科技股份有限公司 | 数据储存装置以及非挥发式存储器控制方法 |
US10629280B1 (en) * | 2018-10-16 | 2020-04-21 | Micron Technology, Inc. | Methods for determining an expected data age of memory cells |
WO2020087211A1 (en) * | 2018-10-29 | 2020-05-07 | Micron Technology, Inc. | Slc cache allocation |
CN109582248B (zh) * | 2018-12-14 | 2022-02-22 | 深圳市硅格半导体有限公司 | 闪存数据的写入方法、装置及计算机可读存储介质 |
CN109887534B (zh) * | 2018-12-29 | 2021-01-01 | 上海百功半导体有限公司 | 闪存器件及其边界字线配置方法/系统、存储介质/控制器 |
TWI701552B (zh) * | 2019-03-22 | 2020-08-11 | 群聯電子股份有限公司 | 記憶體控制方法、記憶體儲存裝置及記憶體控制電路單元 |
TWI727327B (zh) * | 2019-05-29 | 2021-05-11 | 群聯電子股份有限公司 | 資料寫入方法、記憶體控制電路單元以及記憶體儲存裝置 |
CN112051963B (zh) * | 2019-06-06 | 2023-06-13 | 群联电子股份有限公司 | 数据写入方法、存储器控制电路单元以及存储器存储装置 |
US11237732B2 (en) | 2019-08-06 | 2022-02-01 | Intel Corporation | Method and apparatus to improve write bandwidth of a block-based multi-level cell nonvolatile memory |
WO2021035551A1 (en) * | 2019-08-27 | 2021-03-04 | Micron Technology, Inc. | Write buffer control in managed memory system |
CN110618793A (zh) * | 2019-09-18 | 2019-12-27 | 深圳市硅格半导体有限公司 | 一种减少gc处理量的闪存数据写入方法、系统及闪存 |
CN111273865B (zh) * | 2020-01-16 | 2023-07-25 | 重庆邮电大学 | 一种基于可变便笺式存储器的任务分配及调度方法 |
CN112559388B (zh) * | 2020-12-14 | 2022-07-12 | 杭州宏杉科技股份有限公司 | 数据缓存方法及装置 |
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TWI385527B (zh) * | 2009-02-10 | 2013-02-11 | Phison Electronics Corp | Mlc nand型快閃記憶體儲存系統及其控制器與存取方法 |
-
2012
- 2012-05-11 CN CN201280035291.7A patent/CN103688246A/zh active Pending
- 2012-05-11 WO PCT/US2012/037511 patent/WO2012158514A1/en active Application Filing
- 2012-05-11 EP EP12722632.2A patent/EP2710475A1/en not_active Withdrawn
- 2012-05-11 KR KR1020137031597A patent/KR20140040137A/ko not_active Application Discontinuation
- 2012-05-11 JP JP2014511418A patent/JP2014513850A/ja active Pending
- 2012-05-17 TW TW101117622A patent/TW201305817A/zh unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016506579A (ja) * | 2012-12-26 | 2016-03-03 | ウェスタン デジタル テクノロジーズ インコーポレーテッド | データストレージシステム向けの優先度に基づくガベージコレクション |
JP2017027540A (ja) * | 2015-07-28 | 2017-02-02 | 株式会社東芝 | 半導体装置及び電子機器 |
JP2017538981A (ja) * | 2015-11-27 | 2017-12-28 | 華為技術有限公司Huawei Technologies Co.,Ltd. | ストレージデバイスによってデータを記憶するための方法およびストレージデバイス |
Also Published As
Publication number | Publication date |
---|---|
EP2710475A1 (en) | 2014-03-26 |
CN103688246A (zh) | 2014-03-26 |
WO2012158514A1 (en) | 2012-11-22 |
KR20140040137A (ko) | 2014-04-02 |
TW201305817A (zh) | 2013-02-01 |
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