JP2014512696A - Esd保護方策が組み込まれた放射放出半導体チップ - Google Patents
Esd保護方策が組み込まれた放射放出半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 230000005855 radiation Effects 0.000 title claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 188
- 230000007547 defect Effects 0.000 claims abstract description 68
- 239000013078 crystal Substances 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 40
- -1 nitride compound Chemical class 0.000 claims abstract description 11
- 230000015556 catabolic process Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 109
- 238000002347 injection Methods 0.000 claims description 35
- 239000007924 injection Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 13
- 229910052738 indium Inorganic materials 0.000 description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
Description
本特許出願は、独国特許出願第102011100037.6号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (20)
- 窒化物化合物半導体材料系でありpn接合部を有する半導体積層体(2)を有する放射放出半導体チップ(1)であって、
− 意図的に導入された結晶欠陥(4)を有する第1の保護層(3)と、
− 前記第1の保護層(3)よりも高いドープ濃度(n2)を有する第2の保護層(5)であって、前記第1の保護層(3)が、静電放電パルスに対して前記半導体チップ(1)を保護する目的で設けられている、第2の保護層(5)と、
− 放射を生成するための活性ゾーン(7)であって、成長方向(W)において前記第1の保護層(3)の下流に配置されている、活性ゾーン(7)と、
を備えており、
前記半導体チップ(1)の動作時、結晶欠陥(4)を有する領域における逆方向の前記半導体積層体(2)の降伏挙動が、結晶欠陥(4)の存在しない領域とは異なり、静電放電パルスが発生した場合、電荷が、結晶欠陥(4)を有する前記領域を介して、均一に分散する形で放散される、
放射放出半導体チップ(1)。 - 前記半導体積層体(2)が第2の保護層(5)を有し、前記第2の保護層(5)が、前記第1の保護層(3)より高いドープ濃度(n2)を有し、静電放電パルスに対して前記半導体チップ(1)を保護する目的で設けられている、
請求項1に記載の放射放出半導体チップ(1)。 - 前記第2の保護層(5)がn型にドープされており、平均ドープ濃度(n2)が2*1018/cm3〜2*1019/cm3の範囲内である、
請求項2に記載の放射放出半導体チップ(1)。 - 前記第2の保護層(5)が、2nm〜50nmの範囲内、特に2nm〜15nmの範囲内の厚さ(d2)を有する、
請求項2または請求項3に記載の放射放出半導体チップ(1)。 - 前記第2の保護層(5)が、前記活性ゾーン(7)から、0より大きい距離、特に、少なくとも20nm、最大で100nmの距離を隔てて配置されている、
請求項2から請求項4のいずれかに記載の放射放出半導体チップ(1)。 - 前記第2の保護層(5)が、前記第1の保護層(3)と前記活性ゾーン(7)との間に配置されている、
請求項2から請求項5のいずれかに記載の放射放出半導体チップ(1)。 - 前記半導体積層体(2)が、前記第2の保護層(5)と前記活性ゾーン(7)との間に配置されている注入層(6)を有する、
請求項2から請求項6のいずれかに記載の放射放出半導体チップ(1)。 - 前記注入層(6)が、交互に配置されたInGaN層およびGaN層の積層体を備えている、
請求項7に記載の放射放出半導体チップ(1)。 - 前記第2の保護層(5)が、前記注入層(6)より高いドープ濃度(n2)を有する、
請求項7に記載の放射放出半導体チップ(1)。 - 前記第1の保護層(3)と、前記第2の保護層(5)と、前記注入層(6)とを備えた3層(3,5,6)のうちの少なくとも1層の材料組成もしくはドープ濃度(n1,n2,n3)が、それぞれの層の中で変化する、
請求項2から請求項9のいずれかに記載の放射放出半導体チップ(1)。 - 前記第1の保護層(3)が少なくとも2層の部分層を有し、そのうち前記第2の保護層(5)の側の前記部分層が、前記第2の保護層とは反対側の前記部分層よりも低いドープ濃度(n1b)を有する、
請求項2から請求項10のいずれかに記載の放射放出半導体チップ(1)。 - 前記第2の保護層(5)が、20nm〜100nmの範囲内、特に、20nm〜80nmの範囲内の厚さ(d1)を有する、
請求項1から請求項11のいずれかに記載の放射放出半導体チップ(1)。 - 前記結晶欠陥(4)がV字欠陥であり、前記結晶欠陥(4)の大部分が同程度の寸法を有する、
請求項1から請求項12のいずれかに記載の放射放出半導体チップ(1)。 - 前記半導体チップ(1)の動作時、前記結晶欠陥(4)を有する領域における逆方向の前記半導体積層体(2)の電気抵抗が、結晶欠陥の存在しない領域と比較して低い、
請求項1から請求項13のいずれかに記載の放射放出半導体チップ(1)。 - 前記半導体積層体(2)の前記pn接合部が、結晶欠陥(4)を有する領域において、結晶欠陥の存在しない領域におけるよりも、順方向の高いしきい値電圧を有する、
請求項1から請求項14のいずれかに記載の放射放出半導体チップ(1)。 - 前記結晶欠陥(4)の密度が、少なくとも5*107/cm2である、
請求項1から請求項15のいずれかに記載の放射放出半導体チップ(1)。 - 前記半導体積層体(2)がさらなる保護層(12)を有し、前記さらなる保護層(12)が前記第1の保護層(3)より低いドープ濃度を有する、
請求項1から請求項16のいずれかに記載の放射放出半導体チップ(1)。 - 前記さらなる保護層(12)がドープされていない、
請求項17に記載の放射放出半導体チップ(1)。 - 前記さらなる保護層(12)が前記第1の保護層(3)と前記活性ゾーン(7)との間に配置されている、
請求項17または請求項18に記載の放射放出半導体チップ(1)。 - 前記さらなる保護層(12)が、2nm〜15nmの範囲内(両端値を含む)の厚さを有する、
請求項17から請求項19のいずれかに記載の放射放出半導体チップ(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011100037A DE102011100037A1 (de) | 2011-04-29 | 2011-04-29 | Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz |
DE102011100037.6 | 2011-04-29 | ||
PCT/EP2012/057676 WO2012146668A1 (de) | 2011-04-29 | 2012-04-26 | Strahlung emittierender halbleiterchip mit integriertem esd-schutz |
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JP2016023344A Division JP6173501B2 (ja) | 2011-04-29 | 2016-02-10 | Esd保護方策が組み込まれた放射放出半導体チップ |
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JP2016023344A Active JP6173501B2 (ja) | 2011-04-29 | 2016-02-10 | Esd保護方策が組み込まれた放射放出半導体チップ |
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US (1) | US9202978B2 (ja) |
JP (2) | JP5886415B2 (ja) |
CN (1) | CN103503172B (ja) |
DE (2) | DE102011100037A1 (ja) |
TW (1) | TWI483421B (ja) |
WO (1) | WO2012146668A1 (ja) |
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JPWO2015186478A1 (ja) * | 2014-06-03 | 2017-04-20 | シャープ株式会社 | 窒化物半導体発光素子 |
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DE102013103601A1 (de) | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102013103602A1 (de) * | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung |
DE102013104272A1 (de) | 2013-04-26 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
FR3010228B1 (fr) * | 2013-08-30 | 2016-12-30 | St Microelectronics Tours Sas | Procede de traitement d'une couche de nitrure de gallium comportant des dislocations |
DE102013110041B4 (de) | 2013-09-12 | 2023-09-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und optoelektronisches Bauelement |
DE102013112490A1 (de) * | 2013-11-13 | 2015-05-13 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge und Verfahren zu deren Herstellung |
DE102013112881A1 (de) | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
TWI693726B (zh) | 2019-08-14 | 2020-05-11 | 錼創顯示科技股份有限公司 | 微型發光元件及微型發光元件結構 |
CN110444639B (zh) * | 2019-08-14 | 2020-12-22 | 錼创显示科技股份有限公司 | 发光元件及发光元件结构 |
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JP2007180495A (ja) * | 2005-12-02 | 2007-07-12 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US20090014713A1 (en) * | 2007-07-12 | 2009-01-15 | Sang Won Kang | Nitride semiconductor light emitting device and fabrication method thereof |
JP2010232485A (ja) * | 2009-03-27 | 2010-10-14 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子およびその製造方法 |
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JPWO2015186478A1 (ja) * | 2014-06-03 | 2017-04-20 | シャープ株式会社 | 窒化物半導体発光素子 |
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JP5886415B2 (ja) | 2016-03-16 |
TW201248912A (en) | 2012-12-01 |
CN103503172A (zh) | 2014-01-08 |
CN103503172B (zh) | 2016-05-25 |
DE112012001920B4 (de) | 2021-05-06 |
JP6173501B2 (ja) | 2017-08-02 |
TWI483421B (zh) | 2015-05-01 |
WO2012146668A1 (de) | 2012-11-01 |
US9202978B2 (en) | 2015-12-01 |
JP2016146488A (ja) | 2016-08-12 |
US20140183594A1 (en) | 2014-07-03 |
DE112012001920A5 (de) | 2014-02-06 |
DE112012001920B9 (de) | 2021-07-22 |
DE102011100037A1 (de) | 2012-10-31 |
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