JP2014510411A - 半導体チップ、複数の半導体チップを備えたディスプレイ、およびそれらの製造方法 - Google Patents
半導体チップ、複数の半導体チップを備えたディスプレイ、およびそれらの製造方法 Download PDFInfo
- Publication number
- JP2014510411A JP2014510411A JP2014500298A JP2014500298A JP2014510411A JP 2014510411 A JP2014510411 A JP 2014510411A JP 2014500298 A JP2014500298 A JP 2014500298A JP 2014500298 A JP2014500298 A JP 2014500298A JP 2014510411 A JP2014510411 A JP 2014510411A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- active layer
- semiconductor chip
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 242
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000005855 radiation Effects 0.000 claims abstract description 90
- 239000000463 material Substances 0.000 claims abstract description 71
- 238000000605 extraction Methods 0.000 claims abstract description 64
- 230000005693 optoelectronics Effects 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 42
- 238000004382 potting Methods 0.000 claims description 40
- 239000006096 absorbing agent Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000011161 development Methods 0.000 description 16
- 230000018109 developmental process Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
− 放射を生成することを目的とする活性層を備えている、半導体材料の半導体ボディ、を形成するステップと、
− 半導体ボディの上にミラー層を配置するステップであって、半導体チップから放出される放射の放出パターンが順方向における好ましい方向を有するパターンとして生成されるように、活性層によって取り出し面の方に放出された放射とミラー層において反射された放射とが干渉するように、活性層とミラー層との間の隙間が設定される、ステップと、
を含んでいる。
− ミラー層とは反対側の半導体ボディの面にポッティング材料を配置するステップであって、ポッティング材料が、半導体材料の屈折率より低い屈折率を有する、ステップ、
を含んでいる。
Claims (15)
- 半導体材料の半導体ボディ(6)と、放出方向において前記半導体ボディ(6)の下流に配置されている取り出し面(9)と、ミラー層(1)とを備えているオプトエレクトロニクス半導体チップ(100)であって、
− 前記半導体ボディ(6)が、放射を生成することを目的とする活性層(2)を備えており、
− 前記ミラー層(1)が、前記取り出し面(9)とは反対側の前記半導体ボディ(6)の面に配置されており、
− 前記半導体チップ(100)から放出される放射のパターンが順方向における好ましい方向を有するように、前記活性層(2)によって前記取り出し面(9)の方に放出された放射と前記ミラー層(1)において反射された放射とが干渉するように、前記活性層(2)と前記ミラー層(1)との間の隙間(d3)が設定されている、
オプトエレクトロニクス半導体チップ(100)。 - 前記取り出し面(9)が、前記半導体ボディ(6)の横方向範囲より小さい横方向範囲を有し、
前記活性層(2)と前記ミラー層(1)との間の前記隙間(d3)が90nmであり、公差が最大で10%である、
請求項1に記載の半導体チップ。 - 前記半導体ボディ(6)の上にポッティング材料(7)が配置されており、前記ポッティング材料(7)が、前記半導体材料の屈折率より低い屈折率を有する、
請求項1または請求項2のいずれかに記載の半導体チップ。 - 前記活性層(2)と前記取り出し面(9)との間にブラッグミラー(11)が配置されている、
請求項1から請求項4のいずれかに記載の半導体チップ。 - 前記ブラッグミラー(11)がAlxGa(1−x)N層およびGaN層を備えている、
請求項5に記載の半導体チップ。 - 前記半導体ボディ(6)とは反対側の前記ポッティング材料(7)の面、または前記半導体ボディ(6)に、変換層(8)が形成されている、
請求項1から請求項6のいずれかに記載の半導体チップ。 - 請求項1から請求項7のいずれかに記載のオプトエレクトロニクス半導体チップ(100)を複数有するディスプレイ(1000)であって、前記オプトエレクトロニクス半導体チップ(100)が互いに横方向に隣り合って配置されている、ディスプレイ。
- 前記複数の半導体チップ(100)が共通の半導体ボディ(6)を備えている、
請求項8に記載のディスプレイ。 - 隣り合う半導体チップ(100)の、動作時に通電される前記活性層(2)の領域と、前記取り出し面(9)が、いずれも、それぞれ互いに横方向に距離をおいて配置されている、
請求項8または請求項9のいずれかに記載のディスプレイ。 - 隣り合う半導体チップ(100)のポッティング材料(7)の間それぞれに、気体で満たされた凹部(12)が配置されている、
請求項8から請求項10のいずれかに記載のディスプレイ。 - 動作時に通電される、隣り合う半導体チップ(100)の前記活性層(2)の領域の間それぞれに、前記ポッティング材料(7)とは反対の前記活性層(2)の側に、吸収体層(13)が配置されている、
請求項8から請求項11のいずれかに記載のディスプレイ。 - 前記半導体ボディ(6)とは反対側の前記ポッティング材料(7)の面に、変換層(8)が形成されており、前記変換層(8)が、前記活性層(2)によって放出される放射を異なる波長の放射に変換するのに適している複数の領域を備えている、
請求項8から請求項12のいずれかに記載のディスプレイ。 - 請求項1から請求項7のいずれかに記載の半導体チップ(100)を製造する方法であって、
− 放射を生成することを目的とする活性層(2)を備えている、半導体材料の半導体ボディ(6)、を形成するステップと、
− 前記半導体ボディ(6)の上にミラー層(1)を配置するステップと、
を含んでおり、
前記半導体チップ(100)から放出される放射の放出パターンが順方向における好ましい方向を有するパターンとして生成されるように、前記活性層(2)によって前記取り出し面(9)の方に放出された放射と前記ミラー層(1)において反射された放射とが干渉するように、前記活性層(2)と前記ミラー層(1)との間の隙間が設定される、
方法。 - 複数の半導体チップ(100)を備えたディスプレイ(1000)を製造する方法であって、前記複数の半導体チップ(100)が請求項14に記載の方法を使用して製造される、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011015726.3 | 2011-03-31 | ||
DE102011015726.3A DE102011015726B9 (de) | 2011-03-31 | 2011-03-31 | Halbleiterchip, Display mit einer Mehrzahl von Halbleiterchips und Verfahren zu deren Herstellung |
PCT/EP2012/051446 WO2012130499A1 (de) | 2011-03-31 | 2012-01-30 | Halbleiterchip, display mit einer mehrzahl von halbleiterchips und verfahren zu deren herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014510411A true JP2014510411A (ja) | 2014-04-24 |
JP5763261B2 JP5763261B2 (ja) | 2015-08-12 |
Family
ID=45531429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014500298A Active JP5763261B2 (ja) | 2011-03-31 | 2012-01-30 | ディスプレイおよびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9112089B2 (ja) |
JP (1) | JP5763261B2 (ja) |
KR (2) | KR101625271B1 (ja) |
CN (1) | CN103460414B (ja) |
DE (1) | DE102011015726B9 (ja) |
TW (1) | TWI470842B (ja) |
WO (1) | WO2012130499A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011102032A1 (de) | 2011-05-19 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Display mit einer Mehrzahl derartiger Module |
DE102013107862A1 (de) * | 2013-07-23 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils |
DE102014108295A1 (de) | 2014-06-12 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement |
DE102017129623B4 (de) * | 2017-12-12 | 2024-03-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierendes Halbleiterbauelement |
DE102018132542A1 (de) | 2018-12-17 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronische leuchtvorrichtung und herstellungsverfahren |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11510968A (ja) * | 1996-06-11 | 1999-09-21 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 紫外発光ダイオード及び紫外励起可視光放射蛍光体を含む可視発光ディスプレイ及び該デバイスの製造方法 |
JP2004056010A (ja) * | 2002-07-23 | 2004-02-19 | Toyota Central Res & Dev Lab Inc | 窒化物半導体発光素子 |
JP2005079595A (ja) * | 2003-08-28 | 2005-03-24 | Lumileds Lighting Us Llc | 共振空洞発光デバイス |
JP2006060245A (ja) * | 2005-09-21 | 2006-03-02 | Seiko Epson Corp | 面発光型発光素子およびその製造方法、光モジュール、光伝達装置 |
JP2007116139A (ja) * | 2005-09-22 | 2007-05-10 | Mitsubishi Chemicals Corp | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
JP2007533143A (ja) * | 2004-04-14 | 2007-11-15 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオードチップ |
JP2008277651A (ja) * | 2007-05-02 | 2008-11-13 | Mitsubishi Chemicals Corp | 発光ダイオード |
JP2009088299A (ja) * | 2007-09-29 | 2009-04-23 | Nichia Corp | 発光素子及びこれを備える発光装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11154774A (ja) | 1997-08-05 | 1999-06-08 | Canon Inc | 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置 |
US6366018B1 (en) * | 1998-10-21 | 2002-04-02 | Sarnoff Corporation | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
DE19943405B4 (de) * | 1999-09-10 | 2007-12-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines lateral monolithisch integrierten Lichtemissions-Halbleiterbauelements und Lichtemissions-Halbleiterbauelement |
US6998281B2 (en) | 2000-10-12 | 2006-02-14 | General Electric Company | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics |
DE10054966A1 (de) * | 2000-11-06 | 2002-05-16 | Osram Opto Semiconductors Gmbh | Bauelement für die Optoelektronik |
JP3703028B2 (ja) * | 2002-10-04 | 2005-10-05 | ソニー株式会社 | 表示素子およびこれを用いた表示装置 |
KR100611055B1 (ko) | 2004-03-25 | 2006-08-10 | 학교법인 포항공과대학교 | 광양자테 레이저의 다파장 발진특성을 이용한 저전력디스플레이 소자 |
US7609376B2 (en) | 2005-01-05 | 2009-10-27 | Hewlett-Packard Development Company, L.P. | Method and apparatus for pixel display and SERS analysis |
US9158106B2 (en) * | 2005-02-23 | 2015-10-13 | Pixtronix, Inc. | Display methods and apparatus |
US7471706B2 (en) | 2006-06-07 | 2008-12-30 | University Of Central Florida Research Foundation, Inc. | High resolution, full color, high brightness fully integrated light emitting devices and displays |
CN101127379A (zh) * | 2006-08-16 | 2008-02-20 | 苏忠杰 | 高提取效率发光装置 |
WO2008109296A1 (en) | 2007-03-08 | 2008-09-12 | 3M Innovative Properties Company | Array of luminescent elements |
US7718455B2 (en) | 2007-12-17 | 2010-05-18 | Palo Alto Research Center Incorporated | Method of forming a buried aperture nitride light emitting device |
DE102008051050A1 (de) | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Modul mit optoelektronischen Halbleiterelementen |
JP4686625B2 (ja) * | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
-
2011
- 2011-03-31 DE DE102011015726.3A patent/DE102011015726B9/de active Active
-
2012
- 2012-01-30 WO PCT/EP2012/051446 patent/WO2012130499A1/de active Application Filing
- 2012-01-30 KR KR1020137019912A patent/KR101625271B1/ko active IP Right Grant
- 2012-01-30 JP JP2014500298A patent/JP5763261B2/ja active Active
- 2012-01-30 US US14/008,638 patent/US9112089B2/en active Active
- 2012-01-30 CN CN201280016454.7A patent/CN103460414B/zh active Active
- 2012-01-30 KR KR1020157034429A patent/KR101723330B1/ko active IP Right Grant
- 2012-03-29 TW TW101110964A patent/TWI470842B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11510968A (ja) * | 1996-06-11 | 1999-09-21 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 紫外発光ダイオード及び紫外励起可視光放射蛍光体を含む可視発光ディスプレイ及び該デバイスの製造方法 |
JP2004056010A (ja) * | 2002-07-23 | 2004-02-19 | Toyota Central Res & Dev Lab Inc | 窒化物半導体発光素子 |
JP2005079595A (ja) * | 2003-08-28 | 2005-03-24 | Lumileds Lighting Us Llc | 共振空洞発光デバイス |
JP2007533143A (ja) * | 2004-04-14 | 2007-11-15 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオードチップ |
JP2006060245A (ja) * | 2005-09-21 | 2006-03-02 | Seiko Epson Corp | 面発光型発光素子およびその製造方法、光モジュール、光伝達装置 |
JP2007116139A (ja) * | 2005-09-22 | 2007-05-10 | Mitsubishi Chemicals Corp | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
JP2008277651A (ja) * | 2007-05-02 | 2008-11-13 | Mitsubishi Chemicals Corp | 発光ダイオード |
JP2009088299A (ja) * | 2007-09-29 | 2009-04-23 | Nichia Corp | 発光素子及びこれを備える発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN103460414B (zh) | 2016-07-13 |
KR101723330B1 (ko) | 2017-04-04 |
KR101625271B1 (ko) | 2016-05-27 |
KR20150143874A (ko) | 2015-12-23 |
TWI470842B (zh) | 2015-01-21 |
TW201251143A (en) | 2012-12-16 |
WO2012130499A1 (de) | 2012-10-04 |
DE102011015726B4 (de) | 2023-04-27 |
US9112089B2 (en) | 2015-08-18 |
DE102011015726A1 (de) | 2012-10-04 |
DE102011015726B9 (de) | 2023-07-13 |
US20140061667A1 (en) | 2014-03-06 |
JP5763261B2 (ja) | 2015-08-12 |
KR20130095321A (ko) | 2013-08-27 |
CN103460414A (zh) | 2013-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10074786B2 (en) | LED with scattering features in substrate | |
JP4020092B2 (ja) | 半導体発光装置 | |
JP5840744B2 (ja) | 発光ダイオード | |
US7242030B2 (en) | Quantum dot/quantum well light emitting diode | |
KR102153649B1 (ko) | 발광 다이오드 부품 | |
JP6852066B2 (ja) | テクスチャ基板を有する波長変換式発光デバイス | |
KR101441168B1 (ko) | 복사방출 반도체 몸체 | |
CN106415836A (zh) | 半导体器件和照明设备 | |
JP5763261B2 (ja) | ディスプレイおよびその製造方法 | |
US11552229B2 (en) | Spacer layer arrangements for light-emitting diodes | |
JP2005340836A (ja) | オプトエレクトロニクス構成素子及びその製造方法 | |
US20160211422A1 (en) | Semiconductor light emitting device | |
US20220165923A1 (en) | Cover structure arrangements for light emitting diode packages | |
US20230080947A1 (en) | Cover structure arrangements for light emitting diode packages | |
KR102238351B1 (ko) | 반도체 발광 소자 | |
US20230260972A1 (en) | Arrangements of multiple-chip light-emitting diode packages | |
US20230261154A1 (en) | Light-emitting diode packages with selectively placed light-altering materials and related methods | |
US11367810B2 (en) | Light-altering particle arrangements for light-emitting devices | |
US20220069172A1 (en) | Binder materials for light-emitting devices | |
US20090159916A1 (en) | Light source with reflective pattern structure | |
KR102645382B1 (ko) | 표면발광 레이저소자 및 이를 포함하는 발광장치 | |
US20230170335A1 (en) | Light-emitting diode chips and manufacturing processes thereof | |
TW202346227A (zh) | 發光裝置 | |
TWI639249B (zh) | 發光元件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140929 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141007 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150206 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150602 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150610 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5763261 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |