JP2014209844A - Power generation device, and power generation system with power generation device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power generation device that performs photovoltaic and thermal power generation.SOLUTION: A power generation device comprises: a plurality of pn stacks 11 in which p-type semiconductor layers 11a and n-type semiconductor layers 11b are stacked; and a mode switching part 16 which switches a power generation mode into a photovoltaic mode or a thermal power generation mode by connecting the plurality of pn stacks 11. The mode switching part 16 switches the power generation mode into the photovoltaic mode by connecting the p-type semiconductor layers 11a in parallel for each other and connecting the n-type semiconductor layers 11b in parallel for each other to the plurality of pn stacks 11. Also, the mode switching part 16 switches the power generation mode into the thermal power generation mode by connecting the p-type semiconductor layer 11a and the n-type semiconductor layer 11b in series to different pn stacks 11.

Description

  The present invention relates to a power generation device and a power generation system including such a power generation device.

  Conventionally, solar cells that generate light by converting light energy into electrical energy have been used. As this light energy, sunlight is mainly used.

  For example, a solar cell is formed by stacking a p-type semiconductor layer and an n-type semiconductor layer. A solar cell receives light such as sunlight and generates an electromotive force by generating electron-hole pairs at a pn junction.

  As a material for forming a solar cell, there are inorganic and organic materials. In inorganic solar cells, Si is mainly used as an inorganic semiconductor material. The p-type or n-type polarity is controlled by adding an impurity to Si.

  In organic solar cells, organic compounds such as organic dyes, conductive polymers, carbon nanotubes, or the like are used as organic semiconductor materials. And these materials are arrange | positioned on electrically insulating board | substrates, such as glass, for example, and a solar cell is formed.

JP 58-78066 A Japanese Patent Laid-Open No. 9-15353 JP 2007-81097 A

  Solar cells that use sunlight cannot generate electricity at night when sunlight cannot be used. Even during the daytime, depending on the weather such as rain or cloudy weather, sunlight may be weak, so that sufficient power generation may not be possible.

  Further, the power generation device is required to have a simple structure.

  According to one embodiment of the power generation device disclosed in this specification, a plurality of pn stacks in which a p-type semiconductor layer and an n-type semiconductor layer are stacked, and a plurality of the pn stacks are connected to each other to generate photovoltaic power. A mode switching unit that switches to a mode or a thermoelectric generation mode.

  According to one form of the power generation device described above, it has a simple structure, can change light energy into electric energy, and can generate power even when the available light energy is not sufficient.

1 is a system configuration diagram of a first embodiment of a power generation system disclosed in this specification. FIG. (A) is a top view which shows the arrangement | positioning state of the pn laminated body of the electric power generating apparatus shown in FIG. 1, (B) is the sectional view on the AA line of (A). (A) is an enlarged plan view of the pn stack of FIG. 2, and (B) is a cross-sectional view taken along line XX of (A). It is a figure explaining the pn laminated body and mode switching part in the electric power generating apparatus of FIG. (A) is a top view which shows the other arrangement | positioning state of a pn body laminated body, (B) is the BB sectional drawing of (A). It is a figure which shows the pn laminated body and mode switching part of 2nd Embodiment of the electric power generation system disclosed to this specification. It is a figure which shows the pn laminated body of 3rd Embodiment of the electric power generation system disclosed to this specification. It is a figure which shows the formation material of the edge part electrode in the pn laminated body of FIG. 7, and its thermal conductivity. (A) is a top view of the pn laminated body of 4th Embodiment of the electric power generation system disclosed to this specification, (B) is the YY sectional view taken on the line of (A). It is sectional drawing of the pn laminated body of 5th Embodiment of the electric power generation system disclosed to this specification. It is a top view of the pn laminated body of 6th Embodiment of the electric power generation system disclosed to this specification. FIG. 12 is a cross-sectional view of the pn stack of FIG. 11 taken along the line Z1-Z1. It is a system configuration figure of a 7th embodiment of the power generation system indicated to this specification. It is a system configuration figure of an 8th embodiment of the power generation system indicated to this specification. It is FIG. (1) which shows the manufacturing process of 1st Embodiment of the manufacturing method of the electric power generating apparatus disclosed by this specification. It is FIG. (2) which shows the manufacturing process of 1st Embodiment of the manufacturing method of the electric power generating apparatus disclosed to this specification. It is FIG. (The 3) which shows the manufacturing process of 1st Embodiment of the manufacturing method of the electric power generating apparatus disclosed by this specification. FIG. 6 is a diagram (No. 4) illustrating a manufacturing process of the first embodiment of the method for manufacturing the power generating apparatus disclosed in this specification. It is a figure (the 1) which shows the manufacturing process of 2nd Embodiment of the manufacturing method of the electric power generating apparatus disclosed to this specification, (A) is a top view, (B) is Z2-Z2 line | wire of (A). It is an expanded sectional view. It is FIG. (The 2) which shows the manufacturing process of 2nd Embodiment of the manufacturing method of the electric power generating apparatus disclosed by this specification. It is FIG. (The 3) which shows the manufacturing process of 2nd Embodiment of the manufacturing method of the electric power generating apparatus disclosed by this specification. It is a figure (the 4) which shows the manufacturing process of 2nd Embodiment of the manufacturing method of the electric power generating apparatus disclosed to this specification, (A) is a top view, (B) is the Z3-Z3 line | wire of (A). It is an expanded sectional view. It is FIG. (5) which shows the manufacturing process of 2nd Embodiment of the manufacturing method of the electric power generating apparatus disclosed to this specification. It is FIG. (6) which shows the manufacturing process of 2nd Embodiment of the manufacturing method of the electric power generating apparatus disclosed by this specification.

  Hereinafter, a preferred first embodiment of a power generation system disclosed in this specification will be described with reference to the drawings. However, it should be noted that the technical scope of the present invention is not limited to these embodiments, but extends to the invention described in the claims and equivalents thereof.

  FIG. 1 is a diagram illustrating a first embodiment of a power generation system disclosed in this specification. FIG. 2 is a diagram illustrating an arrangement state of the pn stack of the power generation device illustrated in FIG. 1. 3A is an enlarged plan view of the pn stack of FIG. 2, and FIG. 3B is a cross-sectional view taken along line XX of FIG. 3A. FIG. 4 is a diagram illustrating a pn stack and a mode switching unit in the power generation device of FIG.

  As illustrated in FIG. 1, the power generation system 1 includes a power generation device 10 and a control device 30 that controls the power generation device 10.

  The power generation device 10 connects the plurality of pn stacks 11 in which the p-type semiconductor layer 11a and the n-type semiconductor layer 11b are stacked, and the plurality of pn stacks 11 to each other, and switches to the photovoltaic power generation mode or the thermoelectric generation mode. A mode switching unit 16.

  In the photovoltaic power generation mode, the power generation apparatus 10 performs photovoltaic power generation that converts light energy into electrical energy. Further, the power generation apparatus 10 can perform thermoelectric generation that converts thermal energy into electrical energy in the thermoelectric generation mode.

  For example, the power generation device 10 may generate power in the photovoltaic power generation mode during the daytime when sunlight can be used, and generate power in the thermal power generation mode during nighttime when the sunlight cannot be used.

  The control device 30 can include a switching determination unit 31 that determines to switch the power generation device 10 to the photovoltaic power generation mode or the thermal power generation mode and causes the mode switching unit 16 to perform mode switching. In addition, the control device 30 stores a timer unit 32 that gives a timing for the switching determination unit 31 to perform the mode switching determination, and information for the switching determination unit 31 to perform a determination to switch to the photovoltaic power generation mode or the thermal power generation mode. A storage unit 33.

  In the storage unit 33, it is expected that the information on the latitude or altitude of the place where the power generation system 1 is installed, the probability of sunlight based on past statistics, and the amount of power generated by photovoltaic power generation will be greater than the amount of power generated by thermal power generation. The date and time can be stored.

  The switching determination unit 31 determines to switch the power generation device 10 to the photovoltaic power generation mode or the thermal power generation mode based on the information stored in the storage unit 33 at the timing given by the timer unit 32.

  The control device 30 can be formed using, for example, a personal computer. The storage unit 33 can be formed using a semiconductor storage device such as a ROM or a flash memory, a magnetic storage device, or the like.

  As shown in FIG. 1, the electric power generated in the photovoltaic power generation mode in the power generation apparatus 10 is output from + Vsol and −Vsol to the power conditioner 50 via the rectifier 70. Since the electric power generated in the solar power generation mode fluctuates with a change in the light intensity, the output power + Vout is adjusted to be constant by the power conditioner 50 and output to the load.

  Since the battery 60 is connected in parallel to the output from the power conditioner 50, the fluctuation of the photovoltaic power due to the weather is further prevented.

  Further, in the power generation apparatus 10, the electric power generated in the thermoelectric generation mode is output from the + VTE and −VTE to the power conditioner 50 through the rectifier 70 and then output to the load.

  The rectifier 70 prevents the power generated in the photovoltaic mode from flowing back to + VTE. The rectifier 70 prevents the power generated in the thermoelectric generation mode from flowing back to + Vsol.

  The storage battery 60 may be disposed between the power generation apparatus 10 and the power conditioner 50.

  Hereinafter, the power generation apparatus 10 will be further described.

  As shown in FIG. 2, the pn laminated body 11 has a vertically long rectangular shape. Each of the p-type semiconductor layer 11a and the n-type semiconductor layer 11b forming the pn stacked body 11 has a vertically long rectangular shape. The p-type semiconductor layer 11a and the n-type semiconductor layer 11b are stacked so that their longitudinal directions coincide with each other.

  The pn stack 11 includes an electrically insulating substrate 12 having the same shape as the lower semiconductor layer. In the pn stacked body 11, a p-type semiconductor 11 a and an n-type semiconductor layer 11 b are stacked on a substrate 12.

  In the power generation device 10, the plurality of pn stacks 11 are arranged in a line at intervals in the width direction. Here, the width direction is a direction orthogonal to the longitudinal direction of the pn stacked body 11.

  As shown in FIG. 2, the stacking order of the p-type semiconductor layer 11a and the n-type semiconductor layer 11b in the adjacent pn stacks 11 may be different.

  In the pn stack 11 on the left side of FIG. 2B, the n-type semiconductor layer 11b disposed on the substrate 12 side preferably has a larger dimension than the p-type semiconductor layer 11a stacked thereon. 2A, the p-type semiconductor layer 11a disposed on the substrate 12 side preferably has a larger dimension than the n-type semiconductor layer 11b stacked thereon.

  In the photovoltaic mode, the pn stack 11 converts light energy into electrical energy at the pn junction between the p-type semiconductor layer 11a and the n-type semiconductor layer 11b.

  Further, in the thermoelectric generation mode, the pn stack 11 provides a temperature difference at both ends in the longitudinal direction of the p-type semiconductor layer 11a or the n-type semiconductor layer 11b to generate an electromotive force in the longitudinal direction, thereby Convert to energy.

  2A and 2B show a state in which three pn laminated bodies 11 are arranged in a row for the sake of simplicity of explanation, but a larger number of pn laminated bodies 11 are shown. , May be arranged in a line. Moreover, in the electric power generating apparatus 10, the some pn laminated body 11 may be arrange | positioned at the two-dimensional array form.

  Next, with reference to FIGS. 3A and 3B, the structure of the pn stacked body 11 will be further described below. In the pn stacked body 11 shown in FIGS. 3A and 3B, the p-type semiconductor layer 11a is stacked on the n-type semiconductor layer 11b. In the description to be described later, the n-type semiconductor layer 11b is p-type. The present invention is also appropriately applied to a pn stacked body stacked on the semiconductor layer 11a.

  In addition to the above-described p-type semiconductor 11a, n-type semiconductor 11b, and substrate 12, the pn stack 11 has a full-surface electrode as the upper electrode 13 formed on the entire surface above the p-type semiconductor layer 11a. The upper electrode 13 is transparent to sunlight. The pn laminate 11 is arranged with the upper electrode 13 side facing the sun.

  Further, the pn stacked body 11 has a comb-shaped electrode as the lower electrode 14 that is formed separately below the n-type semiconductor layer 11b. A plurality of lower electrodes 14 are arranged at intervals with respect to the longitudinal direction of the n-type semiconductor layer 11b.

  Further, in the pn stacked body 11, end electrodes 15 a and 15 b for extracting electric power that is connected to the semiconductor layers of other pn stacked bodies or takes out thermoelectric power are formed at both ends in the longitudinal direction of the n-type semiconductor layer 11 b. Is formed. The end electrodes 15a and 15b are arranged on the n-type semiconductor layer 11b where the p-type semiconductor layer 11a is not stacked.

  Furthermore, the substrate 12 is formed with a plurality of slits 12 a for preventing heat conduction in the substrate 12. As shown in FIG. 3B, the interval between the plurality of slits 12a gradually increases as it approaches one end portion 11d in the longitudinal direction of the pn stack 11. That is, it gradually decreases as it approaches the other end portion 11c in the longitudinal direction of the pn stack 11.

  When using the pn laminated body 11 as a thermoelectric element, a temperature difference is provided at both ends in the longitudinal direction of the pn laminated body 11. For example, the end electrode 15a side is a low temperature region, and the end electrode 15b side is a high temperature region. In this case, the electromotive force in the n-type semiconductor layer 11b increases as the temperature difference at both ends in the longitudinal direction of the n-type semiconductor layer 11b to which the end electrodes 15a and 15b are connected increases.

  Therefore, in the pn laminate 11, a plurality of slits 12a are provided in a direction orthogonal to the longitudinal direction. By providing the slit 12a, for example, when the end electrode 15b side is a high temperature region, the thermal energy from the end electrode 15b side is transmitted through the substrate 12 to the end electrode 15a side which is a low temperature region. Conduction to is prevented.

  As a material for forming the p-type semiconductor layer 11a and the n-type semiconductor layer 11b, an inorganic semiconductor material containing Si or Ge as a main component can be used.

  As the p-type semiconductor layer 11a and the n-type semiconductor layer 11b, it is preferable to use a poly-Si thin film formed on the substrate 12 from the viewpoint of reducing the manufacturing cost.

  If a p-type Si substrate is used as the substrate 12, the substrate 12 can be used as a p-type semiconductor layer. Similarly, if an n-type Si substrate is used as the substrate 12, the substrate 12 can be used as an n-type semiconductor layer. In particular, by using a monocrystalline or polycrystalline Si substrate as the substrate 12, the performance of photovoltaic power generation can be improved.

  As a p-type dopant added to the p-type semiconductor layer 11a, for example, B, Al, Ga, or In can be used. Moreover, as the n-type dopant added to the n-type semiconductor layer 11b, for example, P, As, or Sb can be used.

As a material for forming the upper electrode 13, for example, ITO, ZnO, or TiO ₂ can be used.

  As the material for forming the substrate 12, for example, glass, alumina, quartz, or the like can be used.

  Next, the mode switching unit 16 of the power generation apparatus 10 will be further described below with reference to FIG. In FIG. 4, the three pn stacks 11 are arranged at intervals in the width direction, and the mode switching unit 16 changes the connection between the plurality of pn stacks 11, so that the power generation device 10 can generate photovoltaic power. Mode or thermoelectric generation mode.

  The mode switching unit 16 switches to the photovoltaic mode by connecting the p-type semiconductor layers 11a in parallel to each other and connecting the n-type semiconductor layers 11b in parallel to the plurality of pn stacks 11.

  Specifically, as shown in FIG. 4, the mode switching unit 16 connects the first switching elements 17a and 17b that connect the p-type semiconductor layers 11a in parallel and the n-type semiconductor layers 11b in parallel. Second switching elements 18a and 18b.

  The first switching element 17 a connects the p-type semiconductor layer 11 a on the left side of FIG. 4 and the p-type semiconductor layer 11 a in the center of FIG. 4 via the upper electrode 13 and the lower electrode 14. The first switching element 17b connects the p-type semiconductor layer 11a in the center of FIG. 4 and the p-type semiconductor layer 11a on the right side of FIG.

  The second switching element 18 a connects the n-type semiconductor layer 11 b on the left side of FIG. 4 and the n-type semiconductor layer 11 b in the center of FIG. 4 via the upper electrode 13. The first switching element 18 b connects the n-type semiconductor layer 11 b in the center of FIG. 4 and the n-type semiconductor layer 11 b on the right side of FIG. 4 via the upper electrode 13 and the lower electrode 14.

  The first switching elements 17a and 17b and the second switching elements 18a and 18b are connected to a common PV mode switching signal line 16a for switching to the photovoltaic mode. The first switching elements 17a and 17b and the second switching elements 18a and 18b are turned on when a signal from the PV mode switching signal line 16a is input. The PV mode switching signal line 16 a is connected to the mode switching unit 16.

  The mode switching unit 16 switches to the thermoelectric generation mode by connecting the p-type semiconductor layer 11a and the n-type semiconductor layer 11b in series to different pn stacks 11.

  Specifically, the mode switching unit 16 connects the p-type semiconductor layer 11a and the n-type semiconductor layer 11b to different pn stacks 11 via the end electrodes 15a and 15b. , 19b.

  The third switching element 19a connects the n-type semiconductor layer 11b on the left side of FIG. 4 to the p-type semiconductor layer 11a in the center of FIG. 4 via the end electrode 15a. The third switching element 19b connects the p-type semiconductor layer 11a in the center of FIG. 4 to the n-type semiconductor layer 11b on the right side of FIG. 4 via the end electrode 15b.

  The third switching elements 19a and 19b are connected to a TE mode switching signal line 16b for switching the power generation apparatus 10 to the thermoelectric generation mode. The third switching elements 19a and 19b are turned on when a signal from the TE mode switching signal line 16b is input. The TE mode switching signal line 16 b is connected to the mode switching unit 16.

  In each pn stack 11, a fifth switching element 21 that connects the plurality of lower electrodes 14 is disposed. As shown in FIG. 4, in each pn laminated body 11, the some 5th switching element 21 is connected in parallel, and the some lower electrode 14 is connected in parallel by conduction | electrical_connection of a 5th switching element.

  The fifth switching element 21 is connected to the PV mode switching signal line 16a for switching the power generation apparatus 10 to the photovoltaic power generation mode. The fifth switching element 21 becomes conductive when a signal from the PV mode switching signal line 16a is input.

  In the present embodiment, the first switching elements 17a and 17b, the second switching elements 18a and 18b, the third switching elements 19a and 19b, and the fifth switching element 21 are normally-off transistors. The normally-off means that the transistor is in a non-conductive state when a signal from the PV mode switching signal line 16a or the TE mode switching signal line 16b is not input, and is in a conductive state when a signal is input. . Moreover, you may use a relay or a mechanical switch as each switching element.

  Next, the operation in which the power generation apparatus 10 generates power in the photovoltaic power generation mode will be described below.

  First, in the photovoltaic mode, the mode switching unit 16 outputs a signal to the PV mode switching signal line 16a, so that the first switching elements 17a and 17b, the second switching elements 18a and 18b, and the fifth switching element 21 It becomes conductive. On the other hand, since no signal is output to the TE mode switching signal line 16b, the third switching elements 19a and 19b are in a non-conductive state.

  When the first switching elements 17a and 17b are turned on, the p-type semiconductor layers 11a are connected in parallel in the plurality of pn stacks 11. Further, when the second switching elements 18 a and 18 b are in a conductive state, the n-type semiconductor layers 11 b are connected in parallel to the plurality of pn stacks 11.

  Further, when the fifth switching element 21 is turned on, the plurality of lower electrodes 14 in each pn stack 11 are connected in parallel.

  And by irradiating the upper surface of each pn laminated body 11 with light, such as sunlight, each pn laminated body 11 changes light energy into electric energy, and generates electric power. The electric power generated in this way is taken out from the output terminals + Vsol and −Vsol.

  Next, the operation in which the power generation apparatus 10 generates power in the thermoelectric generation mode will be described below.

  First, in the thermoelectric generation mode, the mode switching unit 16 outputs a signal to the TE mode switching signal line 16b, so that the third switching elements 19a and 19b become conductive. On the other hand, since no signal is output to the PV mode switching signal line 16a, the first switching elements 17a and 17b, the second switching elements 18a and 18b, and the fifth switching element 21 are non-conductive.

  When the third switching elements 19a and 19b are turned on, the p-type semiconductor layer 11a and the n-type semiconductor layer 11b are connected in series in different pn stacks 11.

  Then, one end 11d in the longitudinal direction on the electrode terminal 15b side in each pn laminated body 11 is set as a high temperature region H, and the other end 11c in the longitudinal direction is set as a low temperature region L to provide a temperature difference.

  When a temperature gradient occurs in the longitudinal direction of each of the p-type semiconductor layer 11a and the n-type semiconductor layer 11b, an electromotive force is generated due to the Seebeck effect. In the p-type semiconductor layer 11a and the n-type semiconductor layer 11b, the direction of the electromotive force with respect to the temperature gradient is reversed. In the power generation device 10, since the p-type semiconductor layer 11a and the n-type semiconductor layer 11b are connected in series, the directions of electromotive forces in the respective semiconductor layers coincide with each other to generate power. The electric power generated in this way is taken out from the output terminals + VTE and −VTE.

  The power generation system 1 uses the power generation device 10, for example, to generate power in the photovoltaic power generation mode using sunlight during the daytime, and to generate power in the thermoelectric generation mode using geothermal heat at night when sunlight is not available. It can be carried out.

  At night, the temperature of the ground is often higher than the temperature of the atmosphere. For example, when the pn laminated body 11 is horizontally arranged on the ground, the temperature on the end electrode 15b side where the slit 12a is not formed in the substrate 12 approaches the ground temperature and becomes high. On the other hand, the end electrode 15a side in which the plurality of slits 12a are formed on the substrate 12 is relatively low in temperature, which is relatively close to the atmospheric temperature, because geothermal heat is less likely to be conducted due to the heat insulating action of the slits 12a. In this way, thermoelectric power generation can be performed by forming a temperature gradient in the longitudinal direction of the pn stack 11.

  In this way, the power generation system 1 can generate power throughout the day regardless of the weather.

  According to the power generation system 1 of the present embodiment described above, light energy can be changed to electrical energy in the thermal power generation mode. Further, when the available light energy is not sufficient, thermoelectric generation can be performed in the thermoelectric generation mode.

  The power generation system 1 uses the same semiconductor layer as the photovoltaic power generation element and the thermoelectric generation element, and switches the power generation mode by changing the electrical connection between the p-type semiconductor layer 11a and the n-type semiconductor layer 11b in the pn stack. So it has a simple structure.

  Furthermore, efficient power generation can be performed by selecting a photovoltaic power generation mode or a thermal power generation mode and selecting a mode with a high power generation amount by the control device 30.

  Next, a modification of the above-described embodiment will be described below with reference to FIG.

  As shown in FIGS. 5A and 5B, the power generation apparatus 10 may have the same stacking order of the p-type semiconductor layer 11 a and the n-type semiconductor layer 11 b in the adjacent pn stacked body 11. In the example shown in FIGS. 5A and 5B, three pn stacks 11 are arranged in a row in the width direction. In each pn stack 11, the p-type semiconductor layer 11a is an n-type semiconductor layer 11b. Laminated on top.

  In the photovoltaic mode, the mode switching unit 16 connects the p-type semiconductor layers 11a in parallel to each other and the n-type semiconductor layers 11b in parallel to the plurality of pn stacks 11. This is the same as the above-described embodiment except that the wiring connection method is different.

  The mode switching unit 16 connects the p-type semiconductor layer 11a and the n-type semiconductor layer 11b in series to the different pn stacks 11 in the thermoelectric generation mode. This is also the same as the above-described embodiment except that the wiring connection method is different.

  In this modification, since the structure of all the pn laminated bodies 11 is the same, manufacture of a pn laminated body becomes easy.

  Next, power generation systems according to second to seventh embodiments disclosed in the present specification will be described below with reference to the drawings. For points that are not particularly described in the second to seventh embodiments, the description in detail regarding the first embodiment is applied as appropriate. Moreover, in FIGS. 6-14, the same code | symbol is attached | subjected to the same component as FIGS. 1-4.

  Hereinafter, the power generation system according to the second embodiment disclosed in this specification will be described with reference to FIG. 6. FIG. 6 is a diagram illustrating a pn stack and a mode switching unit according to the second embodiment of the power generation system disclosed in this specification.

  The power generation system according to the present embodiment is different from the first embodiment described above in that the mode switching unit 16 has a normally-on type as the third switching element 19.

  The mode switching unit 16 includes first switching elements 17a and 17b and second switching elements 18a and 18b that are normally off, and third switching elements 19a and 19b that are normally on.

  The first switching elements 17a and 17b, the second switching elements 18a and 18b, and the third switching elements 19a and 19b are connected to a common mode switching control signal line 16c. The mode switching control signal line 16 c is connected to the mode switching unit 16.

  Normally-on means that the transistor is in a conductive state when no signal is input from the mode switching control signal line 16c, and is in a non-conductive state when a signal is input.

  Next, the operation in which the power generation apparatus 10 of the present embodiment generates power in the photovoltaic power generation mode will be described below.

  First, in the photovoltaic mode, the mode switching unit 16 outputs a signal to the mode switching signal line 16c, whereby the first switching elements 17a and 17b, the second switching elements 18a and 18b, and the fifth switching element 21 are turned on. It becomes a state. On the other hand, the third switching elements 19a and 19b are turned off.

  And by irradiating the upper surface of each pn laminated body 11 with light, such as sunlight, each pn laminated body 11 changes light energy into electric energy, and generates electric power. The electric power generated in this way is taken out from the output terminals + Vsol and −Vsol.

  Next, the operation in which the power generation apparatus 10 generates power in the thermoelectric generation mode will be described below.

  First, in the thermoelectric generation mode, the mode switching unit 16 stops outputting the signal to the mode switching signal line 16c, so that the third switching elements 19a and 19b are in a conductive state. On the other hand, the first switching elements 17a and 17b, the second switching elements 18a and 18b, and the fifth switching element 21 are turned off.

  Then, one end 11d in the longitudinal direction on the electrode terminal 15b side in each pn laminated body 11 is set as a high temperature region H, and the other end 11c in the longitudinal direction is set as a low temperature region L to provide a temperature difference. The electric power generated in this way is taken out from the output terminals + VTE and −VTE.

  According to the power generation system 1 of the present embodiment described above, the number of wires in the mode switching unit 16 can be reduced.

  Next, a power generation system according to a third embodiment disclosed in this specification will be described below with reference to FIG. FIG. 7 is a diagram illustrating a pn stack of the third embodiment of the power generation system disclosed in this specification.

  In this embodiment, the device is devised to increase the power generation amount in the thermoelectric generation mode by increasing the temperature difference in the longitudinal direction of the n-type semiconductor layer 11b.

  Specifically, the end electrodes 15a and 15b disposed at both ends of the n-type semiconductor layer 11b and the slits 12a formed in the substrate 12 are different from those in the first embodiment described above.

  As shown in FIG. 7, the end electrode 15b disposed at one end 11d in the longitudinal direction of the n-type semiconductor layer 11b has a larger dimension than the end electrode 15a disposed at the other end 11c. Specifically, the planar area of one end electrode 15b is larger than that of the other end electrode 15a.

  One end electrode 15b having a large size has a larger thermal conductivity than the other end electrode 15a having a small size, so that the temperature difference at both ends in the longitudinal direction of the n-type semiconductor layer 11b can be increased. For example, even if the temperature over the longitudinal direction of the substrate 12 is uniform, a temperature gradient can be generated in the longitudinal direction of the n-type semiconductor layer 11b.

  One end electrode 15 b is disposed between the n-type semiconductor layer 11 b and the substrate 12. As a material for forming the end electrodes 15a and 15b, it is preferable to use a material having good electrical conductivity, for example, a metal such as Ag or Cu. And a material with good electrical conductivity has excellent thermal conductivity.

  Therefore, by disposing the end electrode 15a having excellent thermal conductivity between the n-type semiconductor layer 11b and the substrate 12, the thermal energy received by the substrate 12 from a heat source such as the ground is transferred to the n-type semiconductor layer 11b. Can be transmitted efficiently to the end.

  On the other hand, since the other end electrode 15b is disposed on the surface of the n-type semiconductor layer 11b, it does not function as the one end electrode 15a.

  In this way, the temperature difference at both ends in the longitudinal direction of the n-type semiconductor layer 11b can be further increased.

  From the viewpoint described above, it is preferable to use a material having high thermal conductivity as a material for forming one end electrode 15b in order to increase the temperature at the end of the n-type semiconductor layer 11b. On the other hand, as a material for forming the other end electrode 15a, it is preferable to use a material having low thermal conductivity in order to relatively reduce the temperature of the n-type semiconductor layer 11b.

  FIG. 8 shows a material that can be used as a material for the end electrode and its thermal conductivity. As a material for forming the one end electrode 15b, for example, Ag or Cu can be used. Further, as a material for forming the other end electrode 15b, for example, In or Sn can be used.

  In the present embodiment, the widths of the plurality of slits 12 a formed in the substrate 12 gradually increase while approaching the other end portion 11 c in the longitudinal direction of the pn stacked body 11. That is, the width of the slit 12a gradually decreases as it approaches the one end portion 11d in the longitudinal direction of the pn stack 11.

  By using such a slit 12a, the temperature gradient in the longitudinal direction of the substrate 12 can be increased. Also in the first embodiment described above, in order to increase the temperature gradient of the substrate 12, the interval between slits having the same width is changed, but for that purpose, a larger number of slits are formed in the substrate 12. There was a need to do. On the other hand, in the present embodiment, since slits having different widths are used, the same effect can be obtained while reducing the number of slits formed in the substrate 12, and thus the manufacturing cost can be reduced.

  In the above-described thermoelectric generation, the case where electric power is generated using geothermal heat as a heat source at night has been described as an example. On the other hand, the power generation device 10 can also perform thermoelectric generation in the daytime using sunlight as a heat source. Thus, from the viewpoint of performing thermoelectric generation in the daytime, a material having a low light reflectance is used as a material for forming one end electrode 15b in order to increase the temperature at the end of the n-type semiconductor layer 11b. It is preferable to absorb sunlight. On the other hand, as the material for forming the other end electrode 15a, in order to relatively reduce the temperature at the end of the n-type semiconductor layer 11b, a material having a high light reflectance is used to reflect sunlight. preferable. For example, Cu or In can be used as a material having a low light reflectance. In addition, as a material having a high light reflectance, for example, Ag or Al can be used.

  According to the pn laminated body 11 of the present embodiment described above, by appropriately selecting the size, the arrangement position, the thermal conductivity, or the light reflectance with respect to the end electrode, in the longitudinal direction of the n-type semiconductor layer 11b. The thermal gradient can be increased by increasing the temperature gradient.

  Moreover, the above-mentioned description is suitably applied also to the pn laminated body by which the edge part electrode is arrange | positioned at the both ends of the longitudinal direction of the p-type semiconductor layer 11a.

  Next, a power generation system according to a fourth embodiment disclosed in this specification will be described below with reference to FIG. FIG. 9A is a plan view of a pn stack of a fourth embodiment of the power generation system disclosed in this specification, and FIG. 9B is a cross-sectional view taken along line YY in FIG. 9A.

  The power generation system of the present embodiment is different from the first embodiment described above in that the upper electrode 13 is not a full-surface electrode but a comb-shaped electrode. A plurality of upper electrodes 13 are arranged on the p-type semiconductor layer 11a with a gap in the longitudinal direction of the p-type semiconductor layer 11a.

  In the present embodiment, the upper electrode 13 is disposed at the same position as the lower electrode 14 with respect to the longitudinal direction of the pn stack 11.

  However, end electrodes 15a and 15b are arranged at both ends in the longitudinal direction of the p-type semiconductor layer 11a. In the thermoelectric generation mode, the end electrodes 15a and 15b of the p-type semiconductor layer 11a are connected to the end electrodes of the n-type semiconductor layer 11b of the adjacent pn stack 11.

  In the photovoltaic mode, the contact area between the electrode and the semiconductor layer is preferably small from the viewpoint of suppressing recombination of excited minority carriers at the interface with the electrode. In this embodiment, from this viewpoint, a comb-tooth electrode is used as the upper electrode 13.

  Further, when the comb-shaped electrode is used on the light incident side in this way, it is preferable that the width of the electrode is narrowed and the interval between the electrodes is widened so as not to prevent the light from entering the semiconductor layer. .

  According to the power generation system of the present embodiment described above, since the comb-shaped electrode is used as the upper electrode 13, recombination of minority carriers can be suppressed, so that the power generation efficiency in the photovoltaic mode can be improved.

  Next, a power generation system according to a fifth embodiment disclosed in this specification will be described below with reference to FIG. FIG. 10 is a cross-sectional view of the pn stack of the fifth embodiment of the power generation system disclosed in this specification.

  In the substrate 12, the surface on which the p-type semiconductor layer 11a and the n-type semiconductor layer 11b are disposed has an inclination of an angle α with respect to the bottom surface 12b that is horizontal to the ground.

  This angle α is preferably determined based on the latitude and altitude at which the power generation system 1 having the power generation device 10 is installed so that sunlight is efficiently incident on the p-type semiconductor layer 11a. The angle α can be determined as an angle at which the semiconductor layer receives light from the sun vertically, for example, at noon on the day of spring or autumn.

  As shown in FIG. 10, the thickness of the substrate 12 gradually decreases as it approaches one end portion 11d in the longitudinal direction of the pn stacked body 11 to form an angle α. On the other hand, the thickness of the substrate 12 gradually increases as it approaches the other end portion 11 c in the longitudinal direction of the pn stack 11.

  Moreover, since the thickness of the board | substrate 12 is thin at one edge part 11d of the longitudinal direction of the pn laminated body 11, geothermal heat is easy to be transmitted to the n-type semiconductor layer 11b. On the other hand, since the substrate 12 is thick at the other end portion 11c in the longitudinal direction of the pn stacked body 11, geothermal heat is hardly transmitted to the n-type semiconductor layer 11b.

  As a material for forming the substrate 12, it is preferable to use a material having low thermal conductivity in order to increase the temperature difference in the longitudinal direction of the n-type semiconductor layer 11b. As a material for forming the substrate 12, for example, glass or plastic can be used.

  In addition, a heat storage material 25 is disposed inside the substrate 12 at one end in the longitudinal direction of the pn stack 11 in which the substrate 12 is thin. The heat storage material 25 stores heat by receiving sunlight in the daytime, releases the stored heat at night, and increases the temperature of the portion of the n-type semiconductor layer 11b on the one end 11d side. Thus, the efficiency of thermoelectric generation can be increased in the nighttime thermoelectric generation mode.

  Furthermore, one end portion 11d in the longitudinal direction of the pn laminate 11 is thermally connected to the thermally conductive pile 26 driven into the ground, and the geothermal heat is easily conducted to the end portion 11d. It has become. As a material for forming the pile 26, it is preferable to use a material having good thermal conductivity. As a material for forming the pile 26, for example, copper can be used.

  On the other hand, the other end in the longitudinal direction of the pn stack 11 having a thick substrate 12 is provided with a plurality of slits 12a to prevent conduction of geothermal heat to the n-type semiconductor layer 11b.

  In the present embodiment, the width of the lower electrode 14 gradually increases as it approaches the one end portion 11d, and geothermal heat is generated from the substrate 12 through the lower electrode 14 to one end of the n-type semiconductor layer 11b. It is easy to conduct to the part 11d side.

  On the other hand, the width of the lower electrode 14 gradually decreases as it approaches the other end portion 11c, and geothermal heat is conducted from the substrate 12 through the lower electrode 14 to the other end portion 11c side of the n-type semiconductor layer 11b. It is difficult to do.

  In the present embodiment, the upper electrode 13 is formed of a comb-shaped electrode, and the arrangement density of the upper electrode 13 gradually increases as it approaches one end portion 11d. That is, the arrangement density of the upper electrodes 13 gradually decreases as it approaches the other end 11c.

  According to the power generation system of the present embodiment described above, the efficiency of photovoltaic power generation and thermal power generation is increased.

  Next, a power generation system according to a sixth embodiment disclosed in this specification will be described below with reference to FIGS. 11 and 12. FIG. 11 is a plan view of a pn stack of a sixth embodiment of the power generation system disclosed in this specification. 12 is a cross-sectional view of the pn stack of FIG. 11 taken along the line Z1-Z1.

  The pn laminate 11 of this embodiment has a substrate 12 that is transparent to sunlight. As shown in FIG. 12, sunlight is irradiated from the substrate 12 side to the pn stack 11.

  On the substrate 12, a plurality of p-type semiconductor layers 11a are disposed. An n-type semiconductor layer 11b is arranged on each p-type semiconductor layer 11a.

  Between the substrate 12 and the p-type semiconductor layer 11a, a comb-shaped electrode as the lower electrode 14 is disposed. A full-surface electrode is disposed as the upper electrode 13 on the n-type semiconductor layer 11b.

  As shown in FIGS. 11 and 12, the end electrodes 15a and 15b are disposed between the p-type semiconductor layer 11a and the substrate 12 at both ends in the longitudinal direction of the p-type semiconductor layer 11a.

  As illustrated in FIG. 12, the end electrode 15 a extends toward the end electrode 15 b of the adjacent pn stack 11. Similarly, the end electrode 15b extends toward the end electrode 15a of the adjacent pn stack 11.

  In the present embodiment, the mode switching unit 16 includes a fourth switching element 20 that connects between the end electrode 15a and the end electrode 15b facing each other. The TE mode signal line 16b is connected to the fourth switching element 20, and when the signal from the TE mode switching signal line 16b is input, the fourth switching element 20 becomes conductive. The TE mode switching signal line 16 b is connected to the mode switching unit 16.

  In the thermoelectric generation mode, the mode switching unit 16 connects the p-type semiconductor layers 11a to the plurality of pn stacks 11 in series. Then, one end portion 11d in the longitudinal direction of each pn stack 11 is set as a high temperature region H, and the other end portion 11c in the longitudinal direction is set as a low temperature region L to provide a temperature difference. In this way, thermoelectric power generation can be performed using only the p-type semiconductor layer 11a. The generated power is taken out from the output terminals + VTE and −VTE.

  In the photovoltaic mode, as in the first embodiment, the mode switching unit 16 sends a signal to the PV mode signal line 16a, whereby the first switching elements 17a and 17b, the second switching elements 18a and 18b, and the fifth switching element. The element 21 is turned on. The p-type semiconductor layer 11a and the n-type semiconductor layer 11b are connected in parallel.

  As a material for forming the p-type semiconductor layer 11a or the n-type semiconductor layer 11b, an organic semiconductor material is preferably used. As the organic semiconductor material, an organic dye, an organic compound such as a conductive polymer, a carbon nanotube, or the like can be used.

  Specifically, as a material for forming the p-type semiconductor layer 11a, for example, a fullerene derivative can be used. Moreover, as a forming material of the n-type semiconductor layer 11b, for example, 3-hexylthiophene (P3HT) can be used.

  As a material for forming the substrate 12, it is preferable to use an electrically insulating material that transmits sunlight. For example, glass can be used as a material for forming the substrate 12.

Further, a buffer layer may be formed between the substrate 12 and the p-type semiconductor layer 11 a and between the n-type semiconductor layer 11 b and the upper electrode 13. As a material for forming this buffer layer, for example, TiO ₂ , MoO ₃ , PEDOT-PSS, or BCP (bathocupline) can be used.

  According to this embodiment described above, sunlight is incident from the transparent substrate 12, so that the upper electrode 13 and the semiconductor layer are not directly exposed to the outside air, so that the durability of the pn stack 11 is improved.

  The fourth switching element 20 connects the n-type semiconductor layers 11b in series to the plurality of pn stacks 11, and the mode switching unit 16 switches to the thermoelectric generation mode. good. Further, a transparent film may be used as the substrate 12. Alternatively, the upper electrode 13 may be a transparent electrode, and light may be incident from above or from both the upper and lower surfaces.

  Next, a power generation system according to a seventh embodiment disclosed in this specification will be described below with reference to FIG. FIG. 13 is a system configuration diagram of a seventh embodiment of the power generation system disclosed in this specification.

  In the present embodiment, the control device 30 includes a switching determination unit 31, an optical sensor 34, and a temperature sensor 35. The switching determination unit 31 causes the mode switching unit 16 to perform mode switching based on the outputs of the optical sensor 34 and the temperature sensor 35.

  The switching determination unit 31 inputs the outputs of the optical sensor 34 and the temperature sensor 35, and selects a mode in which the power generation amount is high among the power generation amount in the photovoltaic power generation mode and the power generation amount in the thermal power generation mode. Then, the switching determination unit 31 causes the mode switching unit 16 to switch to the selected mode.

  According to this embodiment mentioned above, based on the present weather conditions, such as the irradiation amount or temperature of sunlight, an optimal electric power generation mode can be selected and more efficient electric power generation can be performed.

  As a modification of the seventh embodiment described above, the pn stack 11 of the power generation device 10 may be used as an optical sensor. Photoelectric power generation may be performed when the generated voltage of the pn stack 11 as the optical sensor is equal to or higher than a predetermined threshold value, and thermoelectric power generation may be performed when the generated voltage is less than the predetermined threshold value.

  Next, a power generation system according to an eighth embodiment disclosed in this specification will be described below with reference to FIG. FIG. 14 is a system configuration diagram of an eighth embodiment of the power generation system disclosed in this specification.

  The control device 30 according to the present embodiment includes a switching determination unit 31, a timer unit 32, and a power measurement unit 36 that measures the generated power in the photovoltaic power generation mode and the generated power in the thermal power generation mode.

  The power measuring unit 36 receives the power output + Vsol and −Vsol in the photovoltaic mode. The power measuring unit 36 receives power outputs + VTE and −VTE in the thermoelectric generation mode.

  The timer unit 32 outputs a signal to the switching determination unit 31 so as to switch between the photovoltaic power generation mode and the thermoelectric generation mode at predetermined intervals. This predetermined interval can be, for example, between 10 minutes and 30 minutes.

  When the switching determination unit 31 receives a signal from the timer unit 32, the switching determination unit 31 switches the mode switching unit 16 so as to generate power for a predetermined time in each of the photovoltaic power generation mode and the thermal power generation mode.

  In the power generation apparatus 10, power generation is performed for a predetermined time in each of the photovoltaic power generation mode and the thermal power generation mode by switching the mode switching unit 16.

  The power measuring unit 36 measures the generated power in the photovoltaic power generation mode and the generated power in the thermal power generation mode, and outputs the measured power value to the switching determination unit 31.

  The switching determination unit 31 to which each generated power is input compares the power generation amount in the photovoltaic power generation mode with the power generation amount in the thermal power generation mode, and switches the mode switching unit 16 to the mode with the larger power generation amount.

  According to the above-described embodiment, it is possible to efficiently generate power by selecting an optimal power generation mode at a predetermined interval based on the current weather such as the amount of sunlight or temperature.

  Next, a first embodiment of a preferred method for manufacturing a pn stack in the power generation device of the above-described power generation system will be described below with reference to FIGS. 15 to 18.

  First, as shown in FIG. 15A, a mask pattern 80 is formed on a p-type Si substrate 12. The substrate 12 may be a single crystal substrate or a polycrystalline substrate. The p-type Si substrate 12 also serves as a p-type semiconductor layer.

  Next, as shown in FIG. 15B, anisotropic etching is performed by immersing the substrate 12 in an alkaline solution. As a result, a texture structure 81 is formed on the surface of the substrate 12 that is not covered with the mask pattern 80. By providing this texture structure 81, sunlight can be efficiently absorbed and more photoexcitation can be performed in the photovoltaic mode. As the alkaline solution, for example, KOH or NaOH solution can be used.

  Next, as shown in FIG. 15C, an n-type semiconductor layer 11 b is formed on the surface of the substrate 12 by thermally diffusing impurities such as P in the opening of the mask pattern 80.

  Next, as shown in FIG. 15D, an antireflection layer 83 is formed on the n-type semiconductor layer 11b. As a method for forming the antireflection layer 83, a CVD (Chemical Vapor Deposition) method or a sputtering method can be used. As a material for forming the antireflection layer 83, for example, SiN can be used.

  Next, as shown in FIG. 16E, the mask pattern 80 is removed.

  Next, as shown in FIG. 16F, a mask layer 84 is formed on the antireflection layer 83.

Next, as shown in FIG. 16G, an insulating layer 85 is formed on the surface of the substrate 12 opposite to the surface on which the n-type semiconductor layer 11b is formed. As a method for forming the insulating layer 85, a CVD (Chemical Vapor Deposition) method or a sputtering method can be used. As a material for forming the insulating layer 85, for example, SiO ₂ can be used.

  Next, as shown in FIG. 16H, a mask pattern 86 for forming a comb-shaped lower electrode is formed on the insulating layer 85.

  Next, as shown in FIG. 17I, the portion of the insulating layer 85 exposed at the opening of the mask pattern 86 is removed by etching. As this etching, wet etching using hydrofluoric acid or dry etching can be used.

  Next, as shown in FIG. 17J, boron or the like is thermally diffused in the portion of the substrate 12 exposed at the opening of the mask pattern 86 to form an impurity diffusion layer 87 that is a p + region.

  Next, as shown in FIG. 17K, a conductor layer 88 is formed on the impurity diffusion layer 87 and the mask pattern 86. As a method for forming the conductor layer 88, a sputtering method or a vapor deposition method can be used. As a material for forming the conductor layer 88, for example, a metal such as Al or Au can be used.

  Next, as shown in FIG. 17L, a part of the conductor layer 88 is left and the conductor layer 88 is removed together with the mask pattern 86. The remaining part of the conductor layer 88 forms the lower electrode 14.

  Next, as shown in FIG. 18M, the mask layer 84 is patterned to form a mask pattern 89. The opening of the mask pattern 89 coincides with the position of the lower electrode 14.

  Next, as shown in FIG. 18N, a conductor layer 90 is formed on the substrate 12. As a method for forming the conductor layer 90, a sputtering method or a vapor deposition method can be used. As a forming material of the conductor layer 90, for example, a metal such as Al or Au can be used.

  Next, as shown in FIG. 18 (O), a part of the conductor layer 90 is left by lift-off, and the conductor layer 90 is removed together with the mask pattern 89 to form the upper electrode 13 and the end electrodes 15a and 15b. Is done.

  According to the first embodiment of the manufacturing method described above, the pn stacked body 11 is formed.

  Note that the n-type semiconductor layer 11 b may be formed on the substrate 12. In this case, an n-type Si substrate to which P or the like is added as an n-type impurity is used. Further, as the n + region, an n-type impurity such as P is diffused to form an impurity diffusion layer.

  Since the manufacturing method of the pn laminated body of this embodiment mentioned above can use suitably the manufacturing method of the conventional solar cell, it is possible to manufacture a pn laminated body easily.

  Next, 2nd Embodiment of the preferable manufacturing method of the pn laminated body in the electric power generating apparatus of the electric power generation system mentioned above is described below with reference to FIGS. The pn stack of the sixth embodiment described above is formed using, for example, this embodiment.

  First, as shown in FIGS. 19A and 19B, a mask pattern 100 for forming a lower electrode and an end electrode is formed on a glass substrate 12.

  Next, as shown in FIG. 20, the conductive layer 101 is formed on the glass substrate 12. As a method for forming the conductive layer 101, for example, a sputtering method can be used. As a material for forming the conductive layer 101, for example, ITO or ZnO can be used.

  Next, as shown in FIG. 21, a part of the conductive layer 101 is left by lift-off, and the conductive layer 101 is removed together with the mask pattern 100 to form the lower electrode 14 and the end electrodes 15a and 15b.

  Next, as shown in FIGS. 22A and 22B, a mask pattern 102 is formed on the substrate 12.

Next, after applying a p-type semiconductor layer on the substrate 12 by spin coating or the like, the mask pattern 102 is removed to form a p-type semiconductor layer 11a on the substrate 12, as shown in FIG. . As a material for forming the p-type semiconductor layer 11a, a donor-type conductive polymer such as 3-hexylthiophene (P3HT) can be used. Further, a buffer layer may be provided in order to smoothly move carriers between the lower electrode 14 and the p-type semiconductor layer 11a. For example, TiO ₂ , MoO ₃ , or PEDOT-PSS can be used as the buffer layer.

  Next, as shown in FIG. 24, an n-type semiconductor layer 11b is formed on the p-type semiconductor layer 11a using a mask pattern (not shown). As a method for forming the n-type semiconductor layer 11b, for example, a vapor deposition method can be used. As a material for forming the n-type semiconductor layer 11b, for example, PCBM that is a fullerene derivative can be used. The mask pattern used here can have the same dimensions as the mask pattern 102.

  Next, as shown in FIG. 12, the upper electrode 13 is formed on the n-type semiconductor layer 11b. As a material for forming the upper electrode 13, for example, Al, Ag, or Au can be used. As a method for forming the upper electrode 13, for example, a vapor deposition method can be used. In addition, a buffer layer may be provided in order to smoothly move carriers between the upper electrode 13 and the n-type semiconductor layer 11b. As this buffer layer, for example, a BCP film (bathocupline) can be used.

  In the present invention, the power generation system and the power generation device of each of the embodiments described above can be appropriately changed without departing from the spirit of the present invention.

  All examples and conditional words mentioned herein are intended for educational purposes to help the reader deepen and understand the inventions and concepts contributed by the inventor. All examples and conditional words mentioned herein are to be construed without limitation to such specifically stated examples and conditions. Also, such exemplary mechanisms in the specification are not related to showing the superiority and inferiority of the present invention. While embodiments of the present invention have been described in detail, it should be understood that various changes, substitutions or modifications can be made without departing from the spirit and scope of the invention.

DESCRIPTION OF SYMBOLS 1 Electric power generation system 10 Electric power generation apparatus 11 pn laminated body 11a p-type semiconductor layer 11b n-type semiconductor layer 11c The other end part 11d One end part 12 Substrate 12a Slit 12b Bottom face 13 Upper electrode (for solar cells)
14 Lower electrode (for solar cells)
15a, 15b End electrodes (for thermoelectric generation)
16 mode switching unit 16a PV mode switching signal line 16b TE mode switching signal line 16c mode switching signal line 17 first switching element 18 second switching element 19 third switching element 20 fourth switching element 21 fifth switching element 22 PV mode switching Signal line 23 TE mode switching signal line 24 Mode switching signal line 25 Heat storage material 26 Pile 30 Control device 31 Switching determination unit 32 Timer unit 33 Storage unit 34 Optical sensor 35 Temperature sensor 36 Voltage measurement unit 50 Power conditioner 60 Electric condenser 70 Rectifier 80 Mask pattern 81 Texture structure 83 Antireflection layer 84 Mask layer 85 Insulating layer 86 Mask pattern 87 Impurity diffusion layer 88 Conductor layer 89 Mask pattern 90 Conductor layer 100 Mask Turn 101 conductive layer 102 mask pattern H high temperature region L low temperature region

Claims (5)

a plurality of pn stacks in which a p-type semiconductor layer and an n-type semiconductor layer are stacked;
A mode switching unit that connects a plurality of the pn stacks and switches to a photovoltaic mode or a thermoelectric generation mode;
A power generator comprising:   The mode switching unit is configured to switch to a photovoltaic mode by connecting the p-type semiconductor layers in parallel to each other and connecting the n-type semiconductor layers in parallel to the plurality of pn stacks. The power generator according to 1.   The power generation device according to claim 2, wherein the mode switching unit switches to the thermoelectric generation mode by connecting the p-type semiconductor layer and the n-type semiconductor layer in series to the different pn stacks.   The mode switching unit connects the p-type semiconductor layers in series to the plurality of pn stacks, or connects the n-type semiconductor layers in series to the plurality of pn stacks. The power generator according to claim 2 which switches to thermoelectric power generation mode by doing.   The switching unit includes a first switching element that connects the p-type semiconductor layers in parallel, a second switching element that connects the n-type semiconductor layers in parallel, and the p-stacks different from each other. The power generation device according to claim 3, further comprising: a type semiconductor layer and a third switching element connected in series with the n-type semiconductor layer.

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