JP2006333328A - Wireless chip and sensor employing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wireless chip which autonomously operates by generating power by receiving natural energy biological energy at a place (out of a radio wave circle) that radio waves of a reader do not reach. <P>SOLUTION: As an apparatus (power generator) which generates power required for operating a wireless chip from natural energy and biological energy, the wireless chip and a sensor including the same are provided. The wireless chip includes a solar cell, a piezoelectric element and a thermoelectric power generating element and autonomously performs data processing according to a program in a memory packaged in the wireless chip outside a radio wave circle. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a wireless chip including a mechanism that generates power by receiving natural energy and bioenergy in a place where radio waves of a reading device do not reach, and performs a measurement operation autonomously, and a sensor using the wireless chip.

Since each non-contact wireless chip has individual identification information, it is possible to identify the individual, and in a non-contact wireless chip that operates by radio waves, data can be received by a reader located at a distance. Is possible.

Non-contact wireless chips are classified according to the frequency band of radio waves used for data transmission / reception, and include those that operate in an RF (Radio Frequency) band, an UHF (Ultra High Frequency) band, a microwave band, and the like.

In recent years, the inventory management and information management markets using these non-contact wireless chips are showing signs of expansion, and their uses are diverse such as food, clothing, and transportation.

As an example of the contactless wireless chip, a contactless wireless chip that operates by light has been proposed (see Patent Document 1).
Japanese Patent Laid-Open No. 8-43527

FIG. 12 is a block diagram illustrating a configuration of the wireless chip disclosed in Patent Document 1. In FIG. This wireless chip includes a solar cell 1201, an antenna 1202, and a wireless interface 1203, and communicates with the reading device 1204. The solar cell 1201 converts light energy into electric energy and supplies it to the wireless interface 1203. The wireless interface 1203 starts operation when receiving the received radio wave 1205 from the antenna 1202, reads the individual identification information from the storage device 1206, and transmits it as a response radio wave 1207 to the reading device 1204.

Further, a non-contact wireless chip that operates by a piezoelectric element has been proposed (see Patent Document 2).
JP 2004-94488 A

FIG. 13 is a block diagram illustrating a configuration of a wireless chip disclosed in Patent Document 2. In FIG. This wireless chip includes a piezoelectric element 1301, an antenna 1302, and a wireless interface 1303, and communicates with the reading device 1304. The piezoelectric element 1301 converts vibration energy into electric energy and supplies it to the wireless interface 1303. The wireless interface 1303 can start operation when receiving a reception radio wave 1305 from the antenna 1302 and can transmit a response radio wave 1306 to the reading device 1304.

As described in Patent Document 1 and Patent Document 2, the wireless chip can be provided with a power supply function such as a solar cell or a piezoelectric element.

By the way, the wireless chips of Patent Document 1 and Patent Document 2 receive radio waves from the reading device and can operate only within the radio wave range. Therefore, the operating range of the wireless chip is limited to a place where radio waves reach.

For example, when a wireless chip is provided with an additional function of a sensor for measuring the surrounding environment and the wireless chip sensor is used, the fact that the operating range is limited within the radio wave range limits the measurable range of the sensor. .

Accordingly, an object of the present invention is to propose a wireless chip capable of performing a measurement operation autonomously by receiving natural energy and bioenergy even outside the radio range and a sensor having the wireless chip.

In view of the above problems, the present invention is characterized by processing data acquired by a sensor according to a program in a memory when an autonomous operation is performed outside the radio range by using a memory and an arithmetic device.

Furthermore, in the present invention, a device (power generation device) that generates electric power necessary for autonomous operation outside the radio wave area by using natural energy and bioenergy is mounted in the wireless chip. A sensor using a wireless chip with a built-in power generation device (wireless chip sensor) is provided.

Such a power generation device includes power generation elements such as a solar cell, a piezoelectric element, and a thermoelectric power generation element.

The power generation element includes a preferable element depending on the environment where the wireless chip sensor is placed, and one or a plurality of these elements can be used. For example, in an environment where sunlight is constantly applied, at least a solar battery is preferably used. In an environment where physical impact is applied, at least a piezoelectric element is preferably used. In an environment where a temperature difference always occurs, such as the surface of a human body, at least a thermoelectric power generation element is preferably used. Efficient power generation can be performed from natural energy and bioenergy by using these power generation elements for different purposes.

Moreover, you may mount a secondary battery and a capacity | capacitance in an electric power generation element auxiliary. Here, the secondary battery refers to a rechargeable battery, which is different from a disposable primary battery.

Specific embodiments of the present invention will be described below.

One embodiment of the present invention is a wireless chip including a power generation device, an antenna, a wireless interface, a calculation device, and a memory, and a sensor including the wireless chip.

Another embodiment of the present invention includes a power generation device, an antenna, a wireless interface, a calculation device, and a memory, and the wireless interface includes a rectifier circuit, a modulation circuit, and an amplifier, and a wireless chip and a sensor including the wireless chip .

Another embodiment of the present invention includes a power generation device, an antenna, a wireless interface, a calculation device, and a memory, and the calculation device includes a CPU (Central Processing Unit) and a FPU (Floating-Point-number-processing-Unit). A wireless chip and a sensor including the wireless chip.

Another embodiment of the present invention includes a power generation device, an antenna, a wireless interface, a calculation device, and a memory. The memory includes an MROM (Mask Read Only Memory), a PROM (Programmable Read Only Memory), and an SRAM (Static Random Access Memory). A wireless chip and a sensor having the wireless chip.

Another embodiment of the present invention includes a power generation device, an antenna, a wireless interface, an arithmetic device, and a memory. The power generation device is a solar cell, a piezoelectric element, a thermoelectric power generation element, or a plurality of power generation elements, and a secondary power generation device. A wireless chip including a battery, a capacity, and a power supply controller, and a sensor including the wireless chip.

Another embodiment of the present invention includes a power generation device, an antenna, a wireless interface, a calculation device, a memory, and a sensor, and the sensor is a physical sensor (pressure, sound, position, velocity, acceleration, angular velocity, force, mechanical quantity, flow rate, Wireless, characterized by having one or more of temperature, infrared, visible light, ultraviolet, radiation, magnetism), chemical sensor (gas, humidity, ion), biological sensor (odor, DNA, blood, taste) It is a chip sensor.

In such a wireless chip and a sensor having the wireless chip, when the wireless interface receives a received radio wave, the measurement data in the memory can be returned to the reading device together with the individual identification information.

In addition, when the power generation apparatus generates a certain amount of power while the wireless interface cannot receive the received radio wave, information can be acquired from the sensor and stored in the memory. MROM, PROM, and SRAM can be applied to the memory.

According to the present invention, the sensor can be operated autonomously outside the radio wave range. As a result, the operating range of the wireless chip and the sensor having the wireless chip that was limited to the radio wave range can be expanded, and the sensor can be placed in a necessary place. It can be used in a wide range of fields, such as checking the amount of UV irradiation, temperature, humidity, and water quality.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment, one embodiment of a wireless chip according to the present invention will be described with reference to drawings.

FIG. 14 illustrates one embodiment of a wireless chip of the present invention. The wireless chip illustrated in FIG. 14 includes a power generation device 1401, an antenna 1402, a wireless interface 1403, an arithmetic device 1404, and a memory 1405. The antenna 1402 is connected to the wireless interface 1403, and the wireless interface 1403 is connected to the memory 1405. The arithmetic device 1404 is connected to the memory 1405. Further, the power generation device 1401 supplies power to the arithmetic device 1404.

In addition, since the wireless chip of the present invention includes the power generation device, wireless communication with the reading device can be performed even outside the radio wave range. The wireless chip of the present invention includes a memory in which the operation content of the wireless chip outside the radio wave range is written, and an arithmetic unit that executes the operation content (command). Note that “out of radio wave” means that the wireless chip and the reading device are outside a predetermined distance. The predetermined distance between the wireless chip and the reader is caused by the frequency used for wireless communication. The frequency is attributed to the antenna length or antenna shape used for the wireless chip.

Note that manufacturing cost can be reduced by integrally forming one or more of the power generation device 1401, the antenna 1402, the wireless interface 1403, the arithmetic device 1404, and the memory 1405 on the thin film integrated circuit.

The thin film integrated circuit includes a TFT (thin film transistor) having an insulating film such as a gate insulating film formed by an HDP (high density plasma) CVD apparatus, and an oxide and nitridation process performed by an SPA (Slot Plane Antenna) apparatus. .

Next, a more detailed configuration of the wireless interface 1403 in the wireless chip of the present invention will be described.

FIG. 15 shows a block diagram of the wireless interface 1403. The wireless interface 1403 includes a rectifier circuit 1501, a demodulation circuit 1502, a modulation circuit 1503, and an amplifier 1504.

The rectifier circuit 1501 rectifies the AC power supply 1505 input from the antenna 1402, generates a DC power supply 1506, and supplies the DC power supply 1506 to the demodulation circuit 1502, the modulation circuit 1503, and the amplifier 1504.

A transmission radio wave 1507 input from the antenna 1402 to the demodulation circuit 1502 is demodulated by the demodulation circuit 1502 and output to the arithmetic device 1404 as a transmission signal 1508. Here, the transmission radio wave 1507 is a high frequency signal, and the transmission signal 1508 is a carrier wave signal demodulated by passing the transmission radio wave 1507 through the demodulation circuit 1502.

Further, the response signal 1509 input from the arithmetic device 1404 to the modulation circuit 1503 is modulated by the modulation circuit 1503, amplified or buffered by the amplifier 1504, and then output as the response radio wave 1510 to the antenna 1402. Here, the response signal 1509 is a carrier wave, and the response radio wave 1510 is a high-frequency signal modulated by passing the response signal 1509 through the modulation circuit 1503.

Such a circuit used for the radio interface 1403 that operates at high frequency has a rounded corner layout with rounded corners of the gate and wiring, thereby suppressing generation of dust during manufacturing, improving yield, and operating at high frequency. An effect of reducing noise generation may be provided.

Next, the operation of such a wireless chip is described.

The wireless interface 1403 demodulates the transmission radio wave received by the antenna 1402 and sends it to the arithmetic device 1404 as a transmission signal 1508. The arithmetic device 1404 reads data in the memory 1405 based on the operation content included in the transmission signal 1508 and sends it as a response signal 1509 to the wireless interface 1403. Finally, the wireless interface 1403 modulates the response signal 1509 and transmits it as a response radio wave 1510.

Hereinafter, advantages of the wireless chip in this embodiment will be described.

1) It can operate semipermanently by using a power generation element such as a solar battery that converts natural energy into electric power as a power source of an arithmetic unit.
2) It can operate semipermanently by using a power generation element such as a thermoelectric power generation element that converts bioenergy into electric power as a power source of the arithmetic unit.
3) Data can be compressed by processing data using an arithmetic unit to reduce the amount of memory used, and the price of a wireless chip can be reduced by installing a small memory.
4) By processing the data using an arithmetic device, the data can be encrypted to protect privacy.
5) The manufacturing cost of the wireless chip can be reduced by integrally forming any one or more of the power generation device, the antenna, the wireless interface, the arithmetic device, and the memory on the thin film integrated circuit.

(Embodiment 2)
In this embodiment, transistors included in the wireless interface 1403, the arithmetic device 1404, and the memory 1405 will be described. In addition to a MOS transistor formed on a single crystal substrate, the transistor can be a thin film transistor (TFT).

FIG. 20 is a diagram showing a cross-sectional structure of transistors constituting these circuits. FIG. 20 shows an n-channel transistor 2001, an n-channel transistor 2002, a capacitor element 2004, a resistor element 2005, and a p-channel transistor 2003. Each transistor is a so-called thin film transistor (TFT) including a semiconductor layer 2105, an insulating layer 2108, and a gate electrode 2109. The gate electrode 2109 is formed with a stacked structure of a first conductive layer 2103 and a second conductive layer 2102. FIGS. 21A to 21D are top views corresponding to the transistor, the capacitor, and the resistor shown in FIG. 20 and can be referred to together.

In FIG. 20, an n-channel TFT 2001 is also referred to as a low concentration drain (LDD) on both sides of a gate electrode in the channel length direction (carrier flow direction), and forms source and drain regions that form a contact with the wiring 2104. An impurity region 2107 doped at a lower concentration than the impurity concentration of the impurity region 2106 is formed in the semiconductor layer 2105. In the case where the n-channel TFT 2001 is formed, phosphorus or the like is added to the impurity region 2106 and the impurity region 2107 as an impurity imparting n-type conductivity. LDD is formed as a means for suppressing hot electron degradation and short channel effect.

As shown in FIG. 21A, in the gate electrode 2109 of the n-channel TFT 2001, the first conductive layer 2103 is formed so as to spread on both sides of the second conductive layer 2102. In this case, the first conductive layer 2103 is formed thinner than the second conductive layer. The thickness of the first conductive layer 2103 is formed such that ion species accelerated by an electric field of 10 to 100 kV can pass through. The impurity region 2107 is formed so as to overlap with the first conductive layer 2103 of the gate electrode 2109. That is, an LDD region overlapping with the gate electrode 2109 is formed. In this structure, an impurity region 2107 is formed in a self-aligned manner in the gate electrode 2109 by adding one conductivity type impurity through the first conductive layer 2103 using the second conductive layer 2102 as a mask. That is, the LDD overlapping with the gate electrode is formed in a self-aligning manner.

Transistors having LDDs on both sides are applied to transistors constituting a transmission gate (also referred to as an analog switch) used in a logic circuit of the arithmetic device 1404. In these TFTs, since both positive and negative voltages are applied to the source electrode or the drain electrode, it is preferable to provide LDDs on both sides of the gate electrode.

In FIG. 20, an n-channel TFT 2002 has an impurity region 2107 doped in a semiconductor layer 2105 doped at a lower concentration than the impurity concentration of the impurity region 2106 on one side of a gate electrode. As shown in FIG. 21B, in the gate electrode 2109 of the n-channel TFT 2002, the first conductive layer 2103 is formed so as to spread on one side of the second conductive layer 2102. In this case as well, LDD can be formed in a self-aligned manner by adding an impurity of one conductivity type through the first conductive layer 2103 using the second conductive layer 2102 as a mask.

A transistor having an LDD on one side may be applied to a transistor to which only a positive voltage or only a negative voltage is applied between the source and drain electrodes. Specifically, it may be applied to a transistor constituting a logic gate such as an inverter circuit, a NAND circuit, a NOR circuit, or a latch circuit, or a transistor constituting an analog circuit such as a sense amplifier, a constant voltage generation circuit, or a VCO.

In FIG. 20, the capacitor element 2004 is formed by sandwiching an insulating layer 2108 between a first conductive layer 2103 and a semiconductor layer 2105. The semiconductor layer 2105 forming the capacitor element 2004 includes an impurity region 2110 and an impurity region 2111. The impurity region 2111 is formed in the semiconductor layer 2105 so as to overlap with the first conductive layer 2103. Further, the impurity region 2110 forms a contact with the wiring 2104. Since the impurity region 2111 can be doped with one conductivity type impurity through the first conductive layer 2103, the impurity concentration contained in the impurity region 2110 and the impurity region 2111 can be the same or different. It is. In any case, since the semiconductor layer 2105 functions as an electrode in the capacitor 2004, it is preferable to reduce the resistance by adding an impurity of one conductivity type. In addition, as illustrated in FIG. 21C, the first conductive layer 2103 can function sufficiently as an electrode by using the second conductive layer 2102 as an auxiliary electrode. In this manner, by using a composite electrode structure in which the first conductive layer 2103 and the second conductive layer 2102 are combined, the capacitor element 2004 can be formed in a self-aligning manner.

The capacitor element is used as a storage capacitor and a resonance capacitor included in the wireless interface 1403. In particular, since both positive and negative voltages are applied between the two terminals of the capacitive element, the resonant capacitor needs to function as a capacitor regardless of whether the voltage between the two terminals is positive or negative.

In FIG. 20, the resistance element 2005 is formed by the first conductive layer 2103. Since the first conductive layer 2103 is formed to a thickness of about 30 to 150 nm, a resistance element can be configured by appropriately setting the width and length thereof.

The resistance element is used as a resistance load included in the wireless interface 1403. Also, it may be used as a load when current is controlled by a VCO or the like. The resistance element may be formed using a semiconductor layer containing an impurity element at a high concentration or a thin metal layer. In contrast to a semiconductor layer whose resistance value depends on the film thickness, film quality, impurity concentration, activation rate, and the like, a metal layer is preferable because the resistance value is determined by the film thickness and film quality, so that variation is small.

In FIG. 20, a p-channel transistor 2003 includes an impurity region 2112 in a semiconductor layer 2105. The impurity region 2112 forms source and drain regions that form a contact with the wiring 2104. The gate electrode 2109 has a structure in which the first conductive layer 2103 and the second conductive layer 2102 overlap. The p-channel transistor 2003 is a single drain transistor without an LDD. In the case of forming the p-channel transistor 2003, boron or the like is added to the impurity region 2112 as an impurity imparting p-type conductivity. On the other hand, when phosphorus is added to the impurity region 2112, an n-channel transistor having a single drain structure can be obtained.

One or both of the semiconductor layer 2105 and the gate insulating layer 2108 are excited by microwaves and oxidized by high-density plasma treatment with an electron temperature of 2 eV or less, an ion energy of 5 eV or less, and an electron density of about 1011 to 1013 / cm3. Alternatively, nitriding treatment may be performed. At this time, by setting the substrate temperature to 300 to 450 ° C. and processing in an oxidizing atmosphere (O 2, N 2 O, etc.) or a nitriding atmosphere (N 2, NH 3, etc.), the defect level at the interface between the semiconductor layer 2105 and the gate insulating layer 2108 is reduced. Can be reduced.

By performing this treatment on the gate insulating layer 2108, the insulating layer can be densified. That is, generation of charged defects can be suppressed and fluctuations in the threshold voltage of the transistor can be suppressed. In the case where the transistor is driven with a voltage of 3 V or lower, an insulating layer oxidized or nitrided by this plasma treatment can be used as the gate insulating layer 2108. When the driving voltage of the transistor is 3 V or more, the gate is formed by combining the insulating layer formed on the surface of the semiconductor layer 2105 by this plasma treatment and the insulating layer deposited by the CVD method (plasma CVD method or thermal CVD method). An insulating layer 2108 can be formed. Similarly, this insulating layer can also be used as a dielectric layer of the capacitor 2004. In this case, since the insulating layer formed by this plasma treatment is formed with a thickness of 1 to 10 nm and is a dense film, a capacitor having a large charge capacity can be formed.

As described with reference to FIGS. 20 and 21, elements having various structures can be formed by combining conductive layers having different film thicknesses. The region where only the first conductive layer is formed and the region where the first conductive layer and the second conductive layer are laminated are a photo provided with an auxiliary pattern having a light intensity reducing function consisting of a diffraction grating pattern or a semi-transmissive film. It can be formed using a mask or a reticle. That is, in the photolithography process, when the photoresist is exposed, the amount of light transmitted through the photomask is adjusted to vary the thickness of the resist mask to be developed. In this case, a resist having a complicated shape may be formed by providing a slit having a resolution limit or less in a photomask or a reticle. Alternatively, the mask pattern formed of the photoresist material may be deformed by baking at about 200 ° C. after development.

Further, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function consisting of a diffraction grating pattern or a semi-transmissive film, a region where only the first conductive layer is formed, the first conductive layer and the second conductive layer A region where the conductive layer is stacked can be formed continuously. As shown in FIG. 21A, a region where only the first conductive layer is formed can be selectively formed over the semiconductor layer. Such a region is effective on the semiconductor layer, but is not necessary in other regions (a wiring region continuous with the gate electrode). By using this photomask or reticle, it is not necessary to form a region of only the first conductive layer in the wiring portion, so that the wiring density can be substantially increased.

20 and 21, the first conductive layer is a refractory metal such as tungsten (W), chromium (Cr), tantalum (Ta), tantalum nitride (TaN) or molybdenum (Mo), or a refractory metal. An alloy or a compound mainly composed of is formed with a thickness of 30 to 50 nm. The second conductive layer is made of a refractory metal such as tungsten (W), chromium (Cr), tantalum (Ta), tantalum nitride (TaN), or molybdenum (Mo), or an alloy or compound containing a refractory metal as a main component. To a thickness of 300 to 600 nm. For example, different conductive materials are used for the first conductive layer and the second conductive layer, and a difference in etching rate is caused in an etching process performed later. As an example, TaN can be used as the first conductive layer, and a tungsten film can be used as the second conductive layer.

Further, the first conductive layer may be patterned so that both ends thereof are aligned when the second conductive layer is used to form the gate wiring. As a result, a fine gate wiring can be formed. Further, it is not necessary to form the LDD overlapping the gate electrode in a self-aligning manner.

In this embodiment mode, transistors, capacitors, and resistors having different electrode structures are formed in the same patterning process using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function including a diffraction grating pattern or a semi-transmissive film. It shows that it can be made separately. Thus, elements having different forms can be formed and integrated without increasing the number of steps in accordance with circuit characteristics.

(Embodiment 3)
In this embodiment, a cross-sectional view of the memory 1405 is described.

FIG. 16A is a cross-sectional view of a memory element in which a memory cell portion 1601 and a driver circuit portion 1602 are integrally formed over an insulating substrate 1610. As the insulating substrate 1610, a glass substrate, a quartz substrate, a substrate including silicon, a metal substrate, or the like can be used.

A base film 1611 is provided over the insulating substrate 1610. In the driver circuit portion 1602, thin film transistors 1620 and 1621 are provided through a base film 1611, and a thin film transistor is provided in the memory cell portion 1601 through a base film 1611. Each thin film transistor includes a semiconductor film 1612 patterned in an island shape, a gate electrode 1614 provided via a gate insulating film, an insulator (so-called sidewall) 1613 provided on a side surface of the gate electrode, and a gate electrode 1614. Yes. The semiconductor film 1612 is formed to have a thickness of 0.2 μm or less, typically 40 nm to 170 nm, preferably 50 nm to 150 nm. Further, the insulating film 1616 covering the sidewall 1613 and the semiconductor film 1612 and an electrode 1615 connected to the impurity region formed in the semiconductor film 1612 are provided. Note that since the electrode 1615 is connected to the impurity region, a contact hole can be formed in the gate insulating film and the insulating film 1616, a conductive film can be formed in the contact hole, and the conductive film can be patterned.

In the memory of the present invention, an insulating film typified by a gate insulating film or the like can be manufactured using high-density plasma treatment. The high-density plasma treatment means that the plasma density is 1 × 10 ¹¹ cm ⁻³ or more, preferably 1 × 10 ¹¹ cm ⁻³ to 9 × 10 ¹⁵ cm ⁻³ , such as a microwave (for example, a frequency of 2.45 GHz). This is plasma processing using high frequency. When plasma is generated under such conditions, the low electron temperature is changed from 0.2 eV to 2 eV. As described above, high-density plasma characterized by low electron temperature has low kinetic energy of active species, and thus can form a film with less plasma damage and fewer defects. In the case where a formation object and a gate insulating film are to be formed, a substrate on which a patterned semiconductor film is formed is placed in a film formation chamber capable of such plasma treatment. Then, a film forming process is performed with a distance between an electrode for plasma generation, a so-called antenna, and an object to be formed being 20 mm to 80 mm, preferably 20 mm to 60 mm. Such a high-density plasma treatment can realize a low-temperature process (substrate temperature of 400 ° C. or lower). Therefore, a plastic having low heat resistance can be formed on the substrate.

Such an insulating film can be formed in a nitrogen atmosphere or an oxygen atmosphere. The nitrogen atmosphere is typically a mixed atmosphere of nitrogen and a rare gas, or a mixed atmosphere of nitrogen, hydrogen, and a rare gas. As the rare gas, at least one of helium, neon, argon, krypton, and xenon can be used. The oxygen atmosphere is typically a mixed atmosphere of oxygen and a rare gas, a mixed atmosphere of oxygen, hydrogen, and a rare gas, or a mixed atmosphere of dinitrogen monoxide and a rare gas. As the rare gas, at least one of helium, neon, argon, krypton, and xenon can be used.

The insulating film formed in this way has little damage to other films and becomes dense. In addition, an insulating film formed by high-density plasma treatment can improve an interface state in contact with the insulating film. For example, when the gate insulating film is formed using high-density plasma treatment, the interface state with the semiconductor film can be improved. As a result, the electrical characteristics of the thin film transistor can be improved.

Although the case where high-density plasma treatment is used for manufacturing the insulating film has been described, the semiconductor film may be subjected to high-density plasma treatment. The semiconductor film surface can be modified by high-density plasma treatment. As a result, the interface state can be improved, and the electrical characteristics of the thin film transistor can be improved.

In order to improve flatness, insulating films 1617 and 1618 are preferably provided. At this time, the insulating film 1617 is preferably formed from an organic material, and the insulating film 1618 is preferably formed from an inorganic material. In the case where the insulating films 1617 and 1618 are provided, the electrode 1615 can be formed so as to be connected to the impurity regions through the contact holes in the insulating films 1617 and 1618.

Further, an insulating film 1625 is provided, and a lower electrode 1627 is formed so as to be connected to the electrode 1615. An insulating film 1628 which covers an end portion of the lower electrode 1627 and has an opening so as to expose the lower electrode 1627 is formed. A memory material layer 1629 is formed in the opening, and an upper electrode 1630 is formed. In this manner, a memory element including the lower electrode 1627, the memory material layer 1629, and the upper electrode 1630 is formed. The memory material layer 1629 can be formed of an organic material or an inorganic material. The lower electrode 1627 or the upper electrode 1630 can be formed of a conductive material. For example, it can be formed from a film containing an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si), or an alloy film using these elements. Alternatively, a light-transmitting material such as indium tin oxide (ITO), indium tin oxide containing silicon oxide, or indium oxide containing 2 to 20% zinc oxide can be used.

Further, an insulating film 1631 is preferably formed in order to improve planarity and prevent an impurity element from entering.

For the insulating film described in this embodiment, an inorganic material or an organic material can be used. As the inorganic material, silicon oxide or silicon nitride can be used. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane, or polysilazane can be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Polysilazane is formed using a polymer material having a bond of silicon (Si) and nitrogen (N) as a starting material.

FIG. 16B is a cross-sectional view of a memory element in which a memory material layer is formed in a contact hole 1651 of an electrode 1615 unlike FIG. Similarly to FIG. 16A, the electrode 1615 can be used as the lower electrode, and the memory material layer 1629 and the upper electrode 1630 can be formed over the electrode 1615, whereby the memory element 1641 can be formed. After that, an insulating film 1631 is formed. The other structures are the same as those in FIG.

When the memory element 1641 is formed in the contact hole 1651 in this manner, the memory device can be reduced in size. In addition, since the memory electrode is not necessary, the number of manufacturing steps can be reduced, and a memory device with reduced cost can be provided.

As described above, a memory that can be used for the wireless chip of the present invention is manufactured over an insulating substrate and a driver circuit can be integrally formed; therefore, manufacturing cost can be reduced.

(Embodiment 4)
In this embodiment, a layout of a part of a thin film transistor in a circuit included in a wireless chip is described.

A semiconductor layer corresponding to the semiconductor film 1612 described in the above embodiment has a base film or the like over the entire surface or a part of the substrate having an insulating surface (a region having a larger area than that determined as a semiconductor region of a transistor). Formed through. Then, a mask pattern is formed on the semiconductor layer by photolithography. By etching the semiconductor layer using the mask pattern, an island-shaped semiconductor pattern having a specific shape including a source region, a drain region, and a channel formation region of the thin film transistor can be formed. The shape of the patterned semiconductor layer is determined in consideration of the required circuit characteristics and appropriate layout based on the characteristics of the thin film transistor.

In the thin film transistor of the present invention, the photomask for forming the semiconductor layer has a pattern. This photomask pattern has corners, and one side of the (right triangle) is rounded by removing the corners to a size of 10 μm or less.
The shape of this mask pattern can be transferred as a pattern shape of a semiconductor layer as shown in FIG. Further, when transferring to the semiconductor layer, the corner of the semiconductor film may be transferred so as to be more rounded than the corner of the photomask pattern. In other words, the corners of the semiconductor film pattern may be provided with roundness that is smoother than the photomask pattern. In FIG. 17, gate electrodes and wirings to be formed later are indicated by dotted lines.

Next, a gate insulating film is formed over the semiconductor layer that is patterned so that the corners are rounded. Then, as shown in the above embodiment mode, the gate electrode 1614 and the gate wiring are formed at the same time so as to partially overlap the semiconductor layer. The gate electrode or the gate wiring can be formed by a photolithography technique by forming a metal layer or a semiconductor layer.

The photomask for forming the gate electrode or the gate wiring has a pattern. This photomask pattern has a corner, and one side of a right triangle formed at the corner is 10 μm or less, or 1/2 or less of the line width of the wiring, and 1/5 or more of the line width. The corner is deleted. The shape of the mask pattern can be transferred as a pattern shape of the gate electrode or the gate wiring as shown in FIG. Further, when transferring to the gate electrode or the gate wiring, the corner of the gate electrode or the gate wiring may be further rounded.
That is, the corners of the gate electrode or the gate wiring may be provided with rounding with a smoother pattern shape than the photomask pattern. A corner portion of a gate electrode or a gate wiring formed using such a photomask can be rounded to a corner portion that is 1/2 or less of the line width and 1/5 or more. In FIG. 18, wirings to be formed later are indicated by dotted lines.

Such a gate electrode or gate wiring is bent into a rectangle due to layout restrictions. Therefore, a rounded corner portion of the gate electrode or gate wiring is provided with a convex portion (outer side) and a concave portion (inner side). This rounded convex portion can suppress generation of fine powder due to abnormal discharge during dry etching by plasma. Also, in the rounded recess, even if there is fine powder that can be produced during washing, it can be washed away that it tends to collect at the corner. As a result, the yield can be greatly improved.

Next, an insulating layer or the like corresponding to the insulating films 1616, 1617, and 1618 is formed over the gate electrode or the gate wiring as described in the above embodiment mode. Of course, in the present invention, the insulating film may be a single layer.

Over the insulating layer, an opening is formed in a predetermined position in the insulating film, and a wiring corresponding to the electrode 1615 is formed in the opening. This opening is provided in order to establish electrical connection between the semiconductor layer or gate wiring layer located in the lower layer and the wiring layer. The wiring is formed with a mask pattern by a photolithography technique and formed into a predetermined pattern by etching.

A certain element can be connected by wiring. This wiring does not connect a specific element with a straight line, but bends into a rectangle (hereinafter referred to as a bent portion) due to layout restrictions. In addition, the wiring width of the wiring may change in the opening and other regions. For example, in the opening, when the opening is equal to or larger than the wiring width, the wiring width is changed so as to widen at that portion. Further, since the wiring also serves as one electrode of the capacitor portion in the circuit layout, the wiring width may be increased.

In this case, in the bent portion of the photomask pattern, one side of the right-angled triangle to be formed is 10 μm or less, or half or less of the line width of the wiring, and the corner has a size of 1/5 or more of the line width. Is deleted. Then, as shown in FIG. 19, the wiring pattern is similarly rounded. The corner portion of the wiring is ½ or less of the line width, and the bent portion can be rounded to 1/5 or more. In such rounded wiring, the convex part in the bent part suppresses the generation of fine powder due to abnormal discharge during dry etching by plasma, and in the concave part, even if it is fine powder made when cleaning, As a result of washing away the fact that it tends to gather at the corner, it has the effect that the yield improvement can be expected greatly. By rounding the corners of the wiring, it can be expected to be electrically conducted.

In the circuit having the layout shown in FIG. 19, the bend and the corner of the portion where the wiring width changes are smoothed and rounded to suppress the generation of fine powder due to abnormal discharge during dry etching by plasma, Even if it is a fine powder that has been produced at the time of washing, it has the effect that a significant improvement in yield can be expected as a result of washing away that it tends to collect at the corner. That is, the problem of dust and fine powder in the manufacturing process can be solved. In addition, it can be expected that the wiring is electrically conductive by adopting a configuration in which the corners of the wiring are rounded. In particular, it is very advantageous to be able to wash away dust in wiring such as a drive circuit section provided with a large number of parallel wirings.

Note that in this embodiment mode, a mode in which corners or bent portions are rounded in three layouts of a semiconductor layer, a gate wiring, and a wiring is described; however, the present invention is not limited to this. That is, in any one layer, it is only necessary to round the corners or the bent portions to solve problems such as dust and fine powder in the manufacturing process.

(Embodiment 5)
In this embodiment, one embodiment of a wireless chip sensor according to the present invention will be described with reference to the drawings.

FIG. 1A illustrates one embodiment of a wireless chip sensor of the present invention. The wireless chip sensor illustrated in FIG. 1A is a non-contact type that transmits and receives data to and from a reading device of a terminal device in a non-contact manner. The wireless chip sensor 101 existing in the radio wave area 111 can perform wireless communication with the reading device 102.

In addition, since the wireless chip sensor of the present invention includes the power generation device, wireless communication with the reading device can be performed even outside the radio wave range. The wireless chip sensor of the present invention includes a memory in which the operation content of the wireless chip outside the radio wave range is written, and an arithmetic unit that executes the operation content (command). Note that “out of radio wave” means that the wireless chip or the wireless chip sensor itself and the reading device are outside a predetermined distance. The predetermined distance between the wireless chip and the reader is caused by the frequency used for wireless communication. The frequency is attributed to the antenna length or antenna shape used for the wireless chip.

The structure of the wireless chip sensor 101 according to the present invention is shown in FIG. The wireless chip sensor 101 includes a power generation device 103, an antenna 104, a wireless interface 105, an arithmetic device 106, a memory 107, and a sensor 108. The antenna 104 is connected to the wireless interface 105, and the wireless interface 105 is connected to the memory 107. The arithmetic device 106 is connected to the sensor 108 and the memory 107. The power generation apparatus 103 is connected to an arithmetic device 106 and a sensor 108, and supplies power to them.

Note that the structure in FIG. 1B is merely an embodiment of the present invention, and is not limited to the structure in FIG. 1B as long as the purpose of transmitting the measurement value of the sensor 108 to the reading device 102 is satisfied. For example, in order to record the time measured by the sensor 108, a radio clock may be provided. Further, the arithmetic device 106 is not necessarily required, and may be configured not to exist in order to reduce power consumption. At that time, the measurement data acquired by the sensor 108 is recorded in the memory 107 as it is without being processed by the arithmetic unit 106.

In addition, by forming any one or more of the power generation device 103, the antenna 104, the wireless interface 105, the arithmetic device 106, the memory 107, and the sensor 108 on a thin film integrated circuit, manufacturing cost can be reduced. .

Note that the thin film integrated circuit includes a TFT (thin film transistor) having an insulating film such as a gate insulating film formed by an HDP (high density plasma) CVD apparatus and an oxide and nitriding process performed by a SPA (Slot Plane Antenna) apparatus. .

FIG. 1C shows the configuration of the reading apparatus 102 according to the present invention. The reading apparatus 102 includes an antenna 109 and an information processing apparatus 110. The antenna 109 is connected to the information processing apparatus 110 and can transmit and receive information to and from the wireless chip sensor 101 under the control of the information processing apparatus 110.

Next, a more detailed configuration of the power generation device 103 in the non-contact wireless chip sensor will be described. FIG. 2 shows a block diagram of the power generation apparatus 103.

The power generation apparatus 103 includes a solar cell 201, a piezoelectric element 202, and a thermoelectric element 203. In addition, the kind of these electric power generation elements is not limited to what was shown in FIG. 2, You may use any one or multiple. Further, by connecting a secondary battery 204 and a capacity 205 to these power generation elements, it is possible to stably supply power. Further, the power supply controller 206 measures the potential of the capacitor 205 and switches to a power generation element with a large power generation amount by the switch 208. The generated power supply 207 is supplied to the arithmetic device 106 and the sensor 108.

Next, a more detailed configuration of the wireless interface 105 in the non-contact wireless chip sensor will be described.

FIG. 3 shows a block diagram of the wireless interface 105. The wireless interface 105 includes a rectifier circuit 301, a modulation circuit 302, and an amplifier 303.

The rectifier circuit 301 rectifies the AC power supply 304 input from the antenna 104, generates a DC power supply 305, and supplies it to the modulation circuit 302, the amplifier 303, and the memory 107. The rectifier circuit 301 can generate the DC power supply 305 when the distance to the reading device 102 is short (that is, in the radio wave range), and when the distance from the reading device 102 is long (that is, outside the radio wave range), the DC power source 305. Does not occur. Therefore, outside the radio wave range, the modulation circuit 302, the amplifier 303, and the memory 107 operate using the power generated by the power generation device 103 without using the DC power supply 305.

The response signal 306 input from the memory 107 to the modulation circuit 302 is modulated by the modulation circuit 302, amplified or buffered by the amplifier 303, and then output to the antenna 104 as a response radio wave 307. Here, the response signal 306 is a carrier wave, and the response radio wave 307 is a high-frequency signal modulated by passing the response signal 306 through the modulation circuit 302.

Next, a more detailed configuration of the arithmetic unit 106 in the non-contact wireless chip sensor will be described. FIG. 4 shows a block diagram of the arithmetic unit 106.

The arithmetic device 106 includes a CPU 401 and an FPU 402. The CPU 401 executes the measurement program 403 read from the memory 107 and writes processing data 405 obtained by processing the measurement data 404 received from the sensor 108 to the memory 107. The FPU 402 assists the calculation function of the CPU 401. Note that only the CPU 401 may be used without using the FPU 402.

The configuration shown in FIG. 4 is an example, and the present invention is not limited to this configuration. For example, the FPU 402 may be replaced with an arithmetic device having a limited function such as a cryptographic processing device. An advantage of having an arithmetic unit having such a limiting function is that a circuit specialized for specific processing enables data processing in a short time and reduces power consumption during data processing. An advantage of installing the cryptographic processing apparatus is that encryption calculation with a relatively large amount of computation can be performed in a short time.

Next, a more detailed configuration of the memory 107 in the non-contact wireless chip sensor will be described. FIG. 5 shows a block diagram of the memory 107.

The memory 107 includes an MROM 501, a PROM 502, and an SRAM 503. The MROM 501 is a mask ROM in which the contents stored in advance cannot be rewritten, stores the measurement program and individual identification information, and the arithmetic device 106 reads the measurement program. The PROM 502 is a programmable ROM whose contents can be electrically rewritten. The arithmetic device 106 reads and writes measurement data, and the modulation circuit 302 reads the measurement data. The SRAM 503 is a static RAM that retains stored contents during a period when power is supplied, and the arithmetic device 106 reads and writes the progress of the operation in order to use it as a work area during the operation of the measurement program.

Next, a more detailed configuration of the sensor 108 in the non-contact wireless chip sensor will be described. FIG. 6 shows a block diagram of the sensor 108.

As the sensor 108, a physical sensor 601, a chemical sensor 602, or a biological sensor 603 can be used. The physical sensor 601 measures pressure, sound, position, velocity, acceleration, angular velocity, force, mechanical quantity, flow rate, temperature, infrared ray, visible light, ultraviolet ray, radiation, magnetism, and the like. The chemical sensor 602 measures gas, humidity, and ions. The biosensor 603 measures odor DNA, protein analysis, taste, pollen, and harmful substances. The types of these sensors are not limited to those shown in FIG. 6, and any one or a plurality may be used.

Note that the physical sensor includes a sensor using MEMS (Micro Electro Mechanical System) technology.

Here, MEMS refers to a technology for producing a three-dimensional microstructure using a semiconductor microfabrication technique on a silicon substrate, and a physical sensor using MEMS technology is based on changes in pressure and acceleration. This is a sensor that measures resistance changes due to strain applied to silicon and changes in capacitance caused by the difference in distance between silicon and electrodes.

A physical sensor using MEMS technology has characteristics such as high sensitivity, low power consumption, and light weight, and the manufacturing cost can be reduced by being integrally formed with a circuit constituting a wireless chip sensor on a silicon substrate.

Next, the operation of such a non-contact type wireless chip sensor is shown in FIG. 7 as a flowchart.

The wireless interface 105 receives the AC power supply 304 from the reader 102 by the antenna 104 (S701), and when the DC power supply 305 that can operate the wireless interface 105 is generated from the AC power supply 304 (YES), from the memory 107. A response signal 306 including identification information and measurement data is read (S702), and a response radio wave 307 is returned from the antenna 104 to the reading device 102 (S703). When the DC power supply 305 cannot be generated (NO), the power supply controller 206 checks the power generation amount of the power generation apparatus 103 (S704).

In step S704, when the amount of power generated by the power generation device 103 generates the power necessary to operate the arithmetic device 106 and the sensor 108 (YES), the arithmetic device 106 reads the measurement program from the memory 107 (S705). The sensor measurement value is acquired (S706), data processing is performed (S707), and the processed measurement data is written in the memory 107 (S708).

Hereinafter, advantages of the wireless chip sensor in this embodiment will be described.

1) It can operate semipermanently by using a power generation element such as a solar cell that converts natural energy into electric power as a power source for an arithmetic unit and sensor.
2) It can operate semipermanently by using a power generation element such as a thermoelectric power generation element that changes bioenergy into electric power as a power source for an arithmetic device and sensor.
3) By processing the measurement data obtained from the sensor using an arithmetic unit, the data can be compressed to reduce the amount of memory used, and the price of the wireless chip sensor can be reduced by installing a small memory. I can do it.
4) By processing the measurement data obtained from the sensor using an arithmetic device, the measurement data can be encrypted to protect privacy.
5) The manufacturing cost of the wireless chip sensor can be reduced by integrally forming any one or more of the power generation device, the antenna, the wireless interface, the arithmetic device, the memory, and the sensor on the thin film integrated circuit.

Example 1
In this embodiment, a shoe built-in pedometer system is shown as an application example including the wireless chip sensor illustrated in FIG.

In FIG. 8, the shoe built-in pedometer system includes a power generation device 801, an antenna 802, a wireless interface 803, a memory 804, a sensor 805 on a shoe sole, and a data reading terminal 806. The power generation device 801 includes a piezoelectric element that converts the pressure of a shoe generated by a human walking operation into electric power and a capacity that stabilizes the electric power generated by the piezoelectric element, and a pressure sensor as the sensor 805. The individual identification number included in the memory 804 may be used for inventory management at a store.

A shoe equipped with the above system generates power by a piezoelectric element each time a human walks and counts the number of steps. When the data reading terminal 806 approaches the shoe, the accumulated step count data and the individual identification number of the shoe are read, and the step count data is aggregated and utilized for health management.

(Example 2)
In this embodiment, a fresh food storage recording system is shown as an application example including the wireless chip sensor shown in FIG.

In FIG. 9, the fresh food storage recording system includes a fresh food sales tray having a power generation device 901, an antenna 902, a wireless interface 903, a memory 904, a sensor 905, and an LED 906, a fresh food 907, and a data reading terminal 908. The power generation device 901 includes a solar cell that converts light into electric power, or another power generation element that converts natural energy into electric power, and includes a temperature sensor as the sensor 905.

When a tray for fresh foods equipped with the above system is placed at a temperature above a certain temperature, the time is accumulated, and when the accumulated time value reaches a level at which food poisoning may occur, The LED 906 can be illuminated to warn.

By using the above system, it is possible to manage the expiration date in consideration of peripheral conditions such as temperature without determining the expiration date of the fresh food 907 in units of time.

(Example 3)
In this embodiment, an environment recording system is shown as an application example including the wireless chip sensor illustrated in FIG.

In FIG. 10, the environment recording system includes a power generation device 1001, an antenna 1002, a wireless interface 1003, a computing device 1004, a memory 1005, a sensor 1006, a radio clock 1007, and a data reading terminal 1008. The power generation apparatus 1001 includes a solar battery that converts light into electric power and a secondary battery that charges electric power generated by the solar battery, and includes a sensor 1006 that includes temperature, humidity, pollen, harmful substances, and a gas sensor.

The measuring instrument equipped with the above system generates power by sunlight and operates independently, receives time by the radio clock 1007, accumulates environmental data, and compresses the environmental data by the arithmetic unit 1004 when the memory 1005 is full. In addition, long-term environmental data is accumulated with a small amount of memory 1005. Moreover, it operates with a secondary battery charged in the daytime and in fine weather at night when there is no sunlight and when it is raining.

When the data reading terminal 1008 approaches the measuring instrument, the stored environmental data and the individual identification number of the measuring instrument are read out, and the environmental data can be aggregated and used for environmental protection and research purposes.

Example 4
In this embodiment, a biological analysis system is described as an application example including the wireless chip sensor illustrated in FIG.

In FIG. 11, the biological analysis system includes a power generation device 1101, an antenna 1102, a wireless interface 1103, a calculation device 1104, a memory 1105, a sensor 1106, and a data reading terminal 1107. The power generation device 1101 includes a chemical battery that generates power by a chemical reaction of a substance in the living body, and includes a DNA and blood sensor as the sensor 1106. Implanted in the body and used semipermanently.

Here, a chemical battery that generates electricity by a chemical reaction of a substance in a living body is a battery that breaks down sugars and extracts electrical energy mainly by the action of a biocatalyst (enzyme). For example, there is a carbon electrode coated with a blood glucose degrading enzyme, which uses an electric current that flows during glucose decomposition.

The measuring device generates power by a chemical reaction in the living body and operates autonomously, accumulates biological data, encrypts and compresses the data by the arithmetic device 1104, stores the data in the memory 1105, and conceals the personal privacy. Accumulate high-quality data. In addition, since there is no sensor that uses electric power generated by receiving radio waves, data can be collected safely without continuously applying radio waves to the living body.

When the data reading terminal 1107 approaches the measuring instrument, the stored encrypted biometric data and the individual identification number of the measuring instrument are read, and the biometric data is aggregated and utilized for health management and medical research. be able to.

1 is a block diagram showing an embodiment of a wireless chip sensor according to the present invention. It is a block diagram of the electric power generating apparatus of a wireless chip sensor. It is a block diagram of the wireless interface of a wireless chip sensor. It is a block diagram of the arithmetic unit of a wireless chip sensor. It is a block diagram of the memory of a wireless chip sensor. It is a block diagram of the sensor of a wireless chip sensor. 5 is a flowchart showing the operation of the wireless chip sensor according to the present invention. It is a block diagram which shows the pedometer system with a built-in shoes which is an application example of implementation of a wireless chip sensor. It is a block diagram which shows the fresh food preservation | save recording system which is an application example of implementation of a wireless chip sensor. It is a block diagram which shows the environment recording system which is an application example of implementation of a wireless chip sensor. It is a block diagram which shows the bioanalysis system which is an application example of implementation of a wireless chip sensor. It is a block diagram which shows an example of the conventional wireless chip. It is a block diagram which shows an example of the conventional wireless chip. 1 is a block diagram illustrating an embodiment of a wireless chip according to the present invention. It is a block diagram of the radio | wireless interface of a radio | wireless chip. It is sectional drawing of the memory of a wireless chip. It is the pattern shape of the semiconductor layer of this invention. It is the pattern shape of the gate electrode or gate wiring of this invention. It is the pattern shape of the wiring of this invention. 2 is a cross-sectional structure of a transistor constituting the circuit of the present invention. FIG. 21 is a top view corresponding to the transistor, the capacitor, and the resistor shown in FIG. 20.

Claims (15)

A power generation device, an antenna, a wireless interface, an arithmetic device, and a memory;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
The wireless chip, wherein the arithmetic unit and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface. A power generation device, an antenna, a wireless interface, an arithmetic device, and a memory;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The wireless interface includes a rectifier circuit, a modulation circuit, and an amplifier. A power generation device, an antenna, a wireless interface, an arithmetic device, and a memory;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The arithmetic unit includes a CPU and an FPU. A power generation device, an antenna, a wireless interface, an arithmetic device, and a memory;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
A wireless chip comprising an MROM, PROM, and SRAM as the memory. A power generation device, an antenna, a wireless interface, an arithmetic device, and a memory;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The power generating device includes a solar cell, a piezoelectric element, or a thermoelectric power generating element. A power generation device, an antenna, a wireless interface, an arithmetic device, and a memory;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The power generation device includes a solar cell, a piezoelectric element, or a thermoelectric power generation element, a secondary battery, a capacity, and a power supply controller. In any one of Claims 1 thru | or 6,
The wireless interface includes a rectifier circuit, a demodulation circuit, a modulation circuit, and an amplifier. A power generation device, an antenna, a wireless interface, an arithmetic device, a memory, and a sensor;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
Operating the sensor by the arithmetic unit;
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
A wireless chip sensor. A power generation device, an antenna, a wireless interface, an arithmetic device, a memory, and a sensor;
The power generation device enables wireless communication with the reading device outside the radio wave range, and power is supplied to the arithmetic device.
Operating the sensor by the arithmetic unit;
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The wireless chip sensor, wherein the wireless interface includes a rectifier circuit, a modulation circuit, and an amplifier. A power generation device, an antenna, a wireless interface, an arithmetic device, a memory, and a sensor;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
Operating the sensor by the arithmetic unit;
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The arithmetic unit includes a CPU and an FPU. A power generation device, an antenna, a wireless interface, an arithmetic device, a memory, and a sensor;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
Operating the sensor by the arithmetic unit;
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
A wireless chip sensor comprising an MROM, a PROM, and an SRAM as the memory. A power generation device, an antenna, a wireless interface, an arithmetic device, a memory, and a sensor;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
Operating the sensor by the arithmetic unit;
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The power generation device includes any one of a solar cell, a piezoelectric element, and a thermoelectric power generation element. A power generation device, an antenna, a wireless interface, an arithmetic device, a memory, and a sensor;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
Operating the sensor by the arithmetic unit;
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The power generation device includes a solar battery, a piezoelectric element, or a thermoelectric power generation element, a secondary battery, a capacity, and a power supply controller. A power generation device, an antenna, a wireless interface, an arithmetic device, a memory, and a sensor;
The power generation device enables wireless communication with the reading device outside the radio range, and power is supplied to the arithmetic device.
Operating the sensor by the arithmetic unit;
The computing device and the wireless interface are connected to the memory, and the antenna is connected to the wireless interface,
The wireless chip sensor, wherein the sensor includes a physical sensor, a chemical sensor, or a biological sensor. In any one of Claims 8 thru | or 14,
The wireless chip sensor, wherein the wireless interface includes a rectifier circuit, a demodulation circuit, a modulation circuit, and an amplifier.

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