JP2014175446A5 - - Google Patents
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- JP2014175446A5 JP2014175446A5 JP2013046299A JP2013046299A JP2014175446A5 JP 2014175446 A5 JP2014175446 A5 JP 2014175446A5 JP 2013046299 A JP2013046299 A JP 2013046299A JP 2013046299 A JP2013046299 A JP 2013046299A JP 2014175446 A5 JP2014175446 A5 JP 2014175446A5
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- JP
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- atoms
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- 125000004429 atoms Chemical group 0.000 claims 15
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005755 formation reaction Methods 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013046299A JP6199581B2 (ja) | 2013-03-08 | 2013-03-08 | 金属酸化物膜、及び半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013046299A JP6199581B2 (ja) | 2013-03-08 | 2013-03-08 | 金属酸化物膜、及び半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017160954A Division JP6392955B2 (ja) | 2017-08-24 | 2017-08-24 | 金属酸化物膜 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014175446A JP2014175446A (ja) | 2014-09-22 |
JP2014175446A5 true JP2014175446A5 (fr) | 2016-03-31 |
JP6199581B2 JP6199581B2 (ja) | 2017-09-20 |
Family
ID=51696394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013046299A Expired - Fee Related JP6199581B2 (ja) | 2013-03-08 | 2013-03-08 | 金属酸化物膜、及び半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6199581B2 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017037564A1 (fr) * | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semi-conducteur à oxyde, transistor, et dispositif à semi-conducteur |
WO2017168283A1 (fr) | 2016-04-01 | 2017-10-05 | 株式会社半導体エネルギー研究所 | Semi-conducteur à oxyde composite, dispositif à semi-conducteur ayant ledit semi-conducteur à oxyde composite, et dispositif d'affichage comportant ledit dispositif à semi-conducteur |
US10388738B2 (en) * | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
KR20230019215A (ko) * | 2016-05-19 | 2023-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 산화물 반도체 및 트랜지스터 |
US10043659B2 (en) * | 2016-05-20 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or display device including the same |
JP6800092B2 (ja) * | 2016-06-24 | 2020-12-16 | 株式会社半導体エネルギー研究所 | トランジスタ及び表示装置 |
US20170373195A1 (en) * | 2016-06-27 | 2017-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US20170373194A1 (en) * | 2016-06-27 | 2017-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
TW202129966A (zh) * | 2016-10-21 | 2021-08-01 | 日商半導體能源研究所股份有限公司 | 複合氧化物及電晶體 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101877149B1 (ko) * | 2009-10-08 | 2018-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체층, 반도체 장치 및 그 제조 방법 |
KR101763052B1 (ko) * | 2010-12-03 | 2017-07-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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2013
- 2013-03-08 JP JP2013046299A patent/JP6199581B2/ja not_active Expired - Fee Related
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