JP2014158149A5 - - Google Patents
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- JP2014158149A5 JP2014158149A5 JP2013027618A JP2013027618A JP2014158149A5 JP 2014158149 A5 JP2014158149 A5 JP 2014158149A5 JP 2013027618 A JP2013027618 A JP 2013027618A JP 2013027618 A JP2013027618 A JP 2013027618A JP 2014158149 A5 JP2014158149 A5 JP 2014158149A5
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- 230000005284 excitation Effects 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 34
- 229910052904 quartz Inorganic materials 0.000 claims 3
- 239000010453 quartz Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 240000004282 Grewia occidentalis Species 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Description
本発明は、上述の課題の少なくとも一部を解決するためになされたものであり、以下の形態又は適用例として実現することが可能である。
［形態１］本形態に係る振動素子は、厚み滑り振動で振動し、表裏の関係にある第１の主面及び第２の主面を含む基板と、前記第１の主面に配置され、仮想の四角形に内接する辺又は円周を含む第１の励振電極と、前記第２の主面に配置されている第２の励振電極と、を含み、前記四角形の面積をＳ１、前記第１の励振電極の面積をＳ２としたとき、
８７．７％≦（Ｓ２／Ｓ１）＜９５．０％
の関係を満たすことを特徴とする。
本形態によれば、基本波の厚み滑り振動で励振する高周波の振動素子において、振動素子の容量比γが小さくなるという効果がある。
［形態２］本形態に係る振動素子は、前記第１の励振電極は、前記四角形の少なくとも三隅を切り欠いた形状であることを特徴とする。
本形態によれば、基本波の厚み滑り振動で励振する高周波の振動素子において、実際に振動に寄与しない励振電極の四隅のうち少なくとも三隅を取り除いた第１の励振電極を設けたので、等価直列容量Ｃ１はほとんど影響がなく変化しないが、等価並列容量Ｃ０は小さくなった面積に比例して小さくなるため、振動素子の容量比γが小さくなり、大きな周波数可変感度を有する電圧制御型発振器が得られるという効果がある。
［形態３］上記形態に記載の振動素子において、前記第１の励振電極は、平面視で、前記第２の励振電極の外縁以内に配置されていることを特徴とする。
本形態によれば、基本波の厚み滑り振動で励振する高周波の振動素子において、平面視で第１の励振電極と第２の励振電極との面積が同一の場合に比べ、電極の厚みを厚くできるので、電極膜のオーミックロスを低減し、主振動のＣＩ値の劣化を低減できるという効果がある。
また更に、第１の励振電極と第２の励振電極とを金属マスク法で形成する場合、マスクの多少の位置ずれがあった場合でも、平面視で第１の励振電極と第２の励振電極とが重なる面積が変化し難いため、等価直列容量Ｃ１と等価並列容量Ｃ０のばらつきが生じないので、容量比γのばらつきが小さい振動素子が得られるという効果がある。
［形態４］上記形態に記載の振動素子において、前記第１の励振電極と接続され、前記第１の主面に配置されているリード電極を有し、前記リード電極は、前記第１の励振電極の外縁のうち前記切り欠いた領域外の外縁から延在していることを特徴とする。
本形態によれば、リード電極を切り欠いた領域を除く前記第１の励振電極の外縁から延在することにより、容量比γの低減に効果のある領域を避けることができるので、容量比γのより小さな振動素子が得られるという効果がある。
［形態５］上記形態に記載の振動素子において、前記第２の励振電極は、平面視で、前記四角形よりも大きく、
前記基板の厚さをｔｓ、前記第１の励振電極と前記第２の励振電極の厚さの合計をｔｅ、前記第２の励振電極の厚さをｔｅ２、前記第１の励振電極の厚みすべり振動の振動方向に沿った方向の長さをｈｘ、前記第１の励振電極および前記第２の励振電極の密度をρｅ、前記基板の密度をρｘ、前記基板のカットオフ周波数をｆｓ、前記基板に前記第１の励振電極および前記第２の励振電極を配置したときに前記基板で励振される周波数をｆｅ、前記基板のエネルギー閉じ込め係数をＭ、周波数低下量をΔ、前記基板の周波数定数をＲ、前記基板の異方性定数をＫ、として
Ｍ＝Ｋ×（ｈｘ／（２×ｔｓ））×√△
△＝（ｆｓ−ｆｅ）／ｆｓ
ｆｓ＝Ｒ／［ｔｓ＋ｔｅ２×（ρｅ／ρｘ）］
ｆｅ＝Ｒ／［ｔｓ＋ｔｅ×（ρｅ／ρｘ）］
１５．５≦Ｍ≦３６．７
の関係を満たすことを特徴とする。
本形態によれば、基本波の厚み滑り振動モードで励振する高周波の振動素子において、励振電極及びリード電極の薄膜化に伴うオーミックロスの影響によるＣＩ値の劣化を低減し、励振電極の寸法や膜厚により決定されるインハーモニックモードのスプリアスの励振強度を低減することが可能となる。これにより、主振動のＣＩ値は小さくなり、主振動のＣＩｍ値に対する近接したスプリアスのＣＩｓ値との比、即ちＣＩ値比（ＣＩｓ／ＣＩｍ）の大きな振動素子が得られるという効果がある。
［形態６］上記形態に記載の振動素子において、１７．１≦Ｍ≦３５．７の関係を満たすことを特徴とする。
本形態によれば、インハーモニックモードのスプリアスの励振強度をよりいっそう低減することが可能となるという効果がある。
［形態７］上記形態に記載の振動素子において、前記第１の励振電極の厚み滑り振動方向と直交する方向に沿った長さをｈｚとしたとき、
１．２５≦ｈｘ／ｈｚ≦１．３１
の関係を満たすことを特徴とする。
本形態によれば、結晶の異方性により定まる変位方向の変位分布と、それと直交する方向の変位分布が異なる基板を用いた場合、主振動のエネルギー閉じ込めの効率を高めることができる。さらに、振動素子の容量比γを小さくできる。
ここで、厚み滑り振動の共振周波数が２００ＭＨｚ以上とした場合、厚み滑り振動モードで励振する振動素子は、その周波数が基板の板厚に反比例し決定されるので、２００ＭＨｚ以上の高周波になると基板の板厚が８．４μｍ以下と非常に薄くなるため、形成する励振電極の膜厚も非常に薄くする必要がある。そのため、電極の薄膜化によるオーミックロスの影響が非常に大きくなり、エネルギー閉じ込め係数Ｍを前記範囲にすることは、これらの問題を低減できるので、発振回路が必要とするＣＩ値仕様とスプリアス仕様を満足できる振動素子が得られるという効果がある。
SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
[Embodiment 1] The resonator element according to this embodiment is arranged on the first main surface, the substrate including the first main surface and the second main surface that are vibrated by thickness-shear vibration and have a front-back relationship, A first excitation electrode including a side or circumference inscribed in a virtual quadrangle, and a second excitation electrode disposed on the second main surface, wherein the area of the quadrangle is S1, the first When the area of the excitation electrode is S2,
87.7% ≦ (S2 / S1) <95.0%
It is characterized by satisfying the relationship.
According to this embodiment, in the high frequency vibration element excited by the thickness shear vibration of the fundamental wave, there is an effect that the capacitance ratio γ of the vibration element becomes small.
[Mode 2] The vibration element according to this mode is characterized in that the first excitation electrode has a shape in which at least three corners of the square are cut out.
According to this embodiment, in the high-frequency vibration element excited by the thickness shear vibration of the fundamental wave, the first excitation electrode is provided by removing at least three corners of the four corners of the excitation electrode that do not actually contribute to vibration. The capacitance C1 has almost no influence and does not change, but the equivalent parallel capacitance C0 decreases in proportion to the reduced area, so that the capacitance ratio γ of the vibration element decreases, and a voltage controlled oscillator having a large frequency variable sensitivity is obtained. There is an effect that it is.
[Mode 3] In the resonator element according to the above mode, the first excitation electrode is disposed within an outer edge of the second excitation electrode in a plan view.
According to this embodiment, in the high-frequency vibration element excited by the thickness-shear vibration of the fundamental wave, the thickness of the electrode is increased compared to the case where the areas of the first excitation electrode and the second excitation electrode are the same in plan view. Therefore, there is an effect that the ohmic cross of the electrode film can be reduced and the deterioration of the CI value of the main vibration can be reduced.
Furthermore, when the first excitation electrode and the second excitation electrode are formed by the metal mask method, the first excitation electrode and the second excitation electrode are seen in a plan view even when the mask is slightly displaced. Since the variation of the equivalent series capacitance C1 and the equivalent parallel capacitance C0 does not occur, the vibration element with a small variation in the capacitance ratio γ can be obtained.
[Mode 4] In the resonator element according to the above mode, the resonator element includes a lead electrode connected to the first excitation electrode and disposed on the first main surface, and the lead electrode includes the first excitation electrode. It extends from the outer edge outside the said notch area | region among the outer edges of an electrode, It is characterized by the above-mentioned.
According to this embodiment, by extending from the outer edge of the first excitation electrode excluding the region where the lead electrode is not cut, it is possible to avoid a region effective in reducing the capacitance ratio γ. The smaller vibration element can be obtained.
[Mode 5] In the resonator element according to the above mode, the second excitation electrode is larger than the square in plan view,
The thickness of the substrate is ts, the total thickness of the first excitation electrode and the second excitation electrode is te, the thickness of the second excitation electrode is te2, and the thickness of the first excitation electrode is slipped. The length along the vibration direction of the vibration is hx, the density of the first excitation electrode and the second excitation electrode is ρe, the density of the substrate is ρx, the cutoff frequency of the substrate is fs, and the substrate The frequency excited by the substrate when the first excitation electrode and the second excitation electrode are arranged in fe is fe, the energy confinement coefficient of the substrate is M, the frequency reduction is Δ, and the frequency constant of the substrate is R, where K is the anisotropy constant of the substrate
M = K × (hx / (2 × ts)) × √Δ
Δ = (fs−fe) / fs
fs = R / [ts + te2 × (ρe / ρx)]
fe = R / [ts + te × (ρe / ρx)]
15.5 ≦ M ≦ 36.7
It is characterized by satisfying the relationship.
According to this embodiment, in a high-frequency vibration element excited in the thickness-shear vibration mode of the fundamental wave, the deterioration of the CI value due to the effect of ohmic cross accompanying the thinning of the excitation electrode and the lead electrode is reduced, and the dimensions of the excitation electrode and It is possible to reduce the excitation intensity of the in-harmonic mode spurious determined by the film thickness. As a result, the CI value of the main vibration is reduced, and there is an effect that a vibration element having a large ratio of CIs of adjacent spurious to the CIm value of the main vibration, that is, a CI value ratio (CIs / CIm) is obtained.
[Mode 6] The resonator element according to the above mode is characterized in that the relationship of 17.1 ≦ M ≦ 35.7 is satisfied.
According to this embodiment, there is an effect that the excitation intensity of the spurious in the in-harmonic mode can be further reduced.
[Mode 7] In the resonator element according to the above mode, when the length along the direction orthogonal to the thickness-shear vibration direction of the first excitation electrode is hz,
1.25 ≦ hx / hz ≦ 1.31
It is characterized by satisfying the relationship.
According to this embodiment, when a substrate in which the displacement distribution in the displacement direction determined by the crystal anisotropy is different from the displacement distribution in the direction orthogonal thereto is used, the energy confinement efficiency of the main vibration can be increased. Furthermore, the capacitance ratio γ of the vibration element can be reduced.
Here, when the resonance frequency of the thickness-shear vibration is 200 MHz or more, the vibration element excited in the thickness-shear vibration mode is determined in inverse proportion to the thickness of the substrate. Since the plate thickness is as thin as 8.4 μm or less, the thickness of the excitation electrode to be formed needs to be very thin. Therefore, the effect of ohmic cross due to the thinning of the electrode becomes very large, and setting the energy confinement coefficient M in the above range can reduce these problems. Therefore, the CI value specification and spurious specification required by the oscillation circuit can be reduced. There is an effect that a satisfactory vibration element can be obtained.
次に、一般的に厚み滑り振動モードは基板上に部分電極を形成するか、厚み差を設けると、その部分近傍に振動エネルギーを閉じ込めることができ、安定した共振周波数を得ることができる。この場合の閉じ込めモードの共振周波数は、基板の板厚ｔｓや励振電極の膜厚ｔｅと寸法ｈｘにより求まるエネルギー閉じ込め係数Ｍの関数として表される。
エネルギー閉じ込め係数Ｍは、下記式（２）で表される。
Ｍ＝Ｋ×（ｈｘ／（２×ｔｓ））×√△・・・（２）
ここで、Ｋは基板の異方性係数（ＡＴカット基板の場合は１．５３８）、ｈｘは励振電極の厚み滑り振動の変位方向に沿った寸法、ｔｓは基板の厚み、△は周波数低下量である。尚、ｈｘは、励振電極が円形や楕円形のように形状が矩形でない場合は、厚み滑り振動モードの変位方向に沿った長さのうち最大値を寸法とする。
また、周波数低下量△は下記式（３）で表される。
△＝（ｆｓ−ｆｅ）／ｆｓ・・・（３）
ここで、ｆｓは基板のカットオフ周波数、ｆｅは基板全面に励振電極を成膜した場合の周波数である。
Next, in general, in the thickness-shear vibration mode, when a partial electrode is formed on a substrate or a thickness difference is provided, vibration energy can be confined in the vicinity of the portion, and a stable resonance frequency can be obtained. The resonance frequency of the confinement mode in this case is expressed as a function of the energy confinement coefficient M determined by the thickness ts of the substrate, the film thickness te of the excitation electrode, and the dimension hx.
The energy confinement factor M is expressed by the following formula (2).
M = K × (hx / ( 2 × ts ) ) × √Δ (2)
Here, K is the anisotropy coefficient of the substrate (1.538 in the case of an AT cut substrate), hx is the dimension along the displacement direction of the thickness-slip vibration of the excitation electrode, ts is the thickness of the substrate, and Δ is the amount of frequency reduction It is. Note that hx takes the maximum value of the length along the displacement direction of the thickness-shear vibration mode when the excitation electrode is not a rectangle such as a circle or an ellipse.
Further, the frequency drop amount Δ is expressed by the following formula (3).
Δ = (fs−fe) / fs (3)
Here, fs is a cutoff frequency of the substrate, and fe is a frequency when the excitation electrode is formed on the entire surface of the substrate.
ここで、図７に示す試作条件は、前述の式（２）、（３）、（６）、（７）を満たしている。
Ｍ＝Ｋ×（ｈｘ／（２×ｔｓ））×√△・・・（２）
△＝（ｆｓ−ｆｅ）／ｆｓ・・・（３）
ｆｓ＝Ｒ／［ｔｓ＋ｔｅ２×（ρｅ／ρｘ）］・・・（６）
ｆｅ＝Ｒ／［ｔｓ＋ｔｅ×（ρｅ／ρｘ）］・・・（７）
尚、各パラメータは以下の通りである。
Ｋ（ＡＴカット基板の異方性係数）＝１．５３８
Ｒ（ＡＴカット基板の周波数定数）＝１．６７（ＭＨｚ・ｍｍ）
ρｘ（ＡＴカット基板の密度）＝２．６４９（ｇ／ｃｍ３）
ρＡｕ（金の密度）＝１９．３（ｇ／ｃｍ３）
ρＮｉ（ニッケルの密度）＝８．９（ｇ／ｃｍ３）
であり、２層構造からなる励振電極の密度ρｅは以下のように算出される。
ρｅ＝（ρＡｕ×ｔＡｕ＋ρＮｉ×ｔＮｉ）／（ｔＡｕ＋ｔＮｉ）
ここで、ｔＡｕは上地層の金（Ａｕ）層の厚み、ｔＮｉは下地層のニッケル（Ｎｉ）層の厚みである。
また、ｆｓは振動部１２のカットオフ周波数、ｆｅは振動部１２に励振電極を配置したときの周波数である。
Here, the trial production conditions shown in FIG. 7 satisfy the above-described formulas (2), (3), (6), and (7).
M = K × (hx / ( 2 × ts ) ) × √Δ (2)
Δ = (fs−fe) / fs (3)
fs = R / [ts + te2 × (ρe / ρx)] (6)
fe = R / [ts + te × (ρe / ρx)] (7)
Each parameter is as follows.
K (anisotropic coefficient of AT cut substrate) = 1.538
R (frequency constant of AT cut substrate) = 1.67 (MHz · mm)
ρx (AT cut substrate density) = 2.649 (g / cm 3 )
ρ Au (gold density) = 19.3 (g / cm 3 )
ρ Ni (Nickel density) = 8.9 (g / cm 3 )
The density ρe of the excitation electrode having a two-layer structure is calculated as follows.
ρe = (ρ Au × t Au + ρ Ni × t Ni ) / (t Au + t Ni )
Here, t Au is the thickness of the upper layer gold (Au) layer, and t Ni is the thickness of the lower layer nickel (Ni) layer.
Further, fs is a cut-off frequency of the vibration part 12, and fe is a frequency when the excitation electrode is arranged on the vibration part 12.
Claims (13)
前記第１の主面に配置され、仮想の四角形に内接する辺又は円周を含む第１の励振電極と、
前記第２の主面に配置されている第２の励振電極と、
を含み、
前記四角形の面積をＳ１、前記第１の励振電極の面積をＳ２としたとき、
８７．７％≦（Ｓ２／Ｓ１）＜９５．０％
の関係を満たすことを特徴とする振動素子。 A substrate including a first main surface and a second main surface which are vibrated by thickness-shear vibration and have a front-back relationship;
A first excitation electrode disposed on the first main surface and including a side or circumference inscribed in a virtual rectangle;
A second excitation electrode disposed on the second main surface;
Including
When the area of the square is S1, and the area of the first excitation electrode is S2,
87.7% ≦ (S2 / S1) <95.0%
A vibration element characterized by satisfying the relationship:
前記第１の励振電極は、前記四角形の少なくとも三隅を切り欠いた形状であることを特徴とする振動素子。 In claim 1,
The vibration element according to claim 1, wherein the first excitation electrode has a shape in which at least three corners of the square are cut out.
前記第１の励振電極は、平面視で、前記第２の励振電極の外縁以内に配置されていることを特徴とする振動素子。 In claim 1 or 2,
It said first excitation electrodes, in plan view, the vibration element characterized in that it is located within the outer edge than the second excitation electrode.
前記第１の励振電極と接続され、前記第１の主面に配置されているリード電極を有し、
前記リード電極は、前記第１の励振電極の外縁のうち前記切り欠いた領域外の外縁から延在していることを特徴とする振動素子。 In claim 2 or 3,
A lead electrode connected to the first excitation electrode and disposed on the first main surface;
The lead electrodes, the vibrating element, characterized in that you are extending from the cutaway region outside the outer edge of the outer edge of the first excitation electrode.
前記第２の励振電極は、平面視で、前記四角形よりも大きく、
前記基板の厚さをｔｓ、前記第１の励振電極と前記第２の励振電極の厚さの合計をｔｅ、前記第２の励振電極の厚さをｔｅ２、前記第１の励振電極の厚みすべり振動の振動方向に沿った方向の長さをｈｘ、前記第１の励振電極および前記第２の励振電極の密度をρｅ、前記基板の密度をρｘ、前記基板のカットオフ周波数をｆｓ、前記基板に前記第１の励振電極および前記第２の励振電極を配置したときに前記基板で励振される周波数をｆｅ、前記基板のエネルギー閉じ込め係数をＭ、周波数低下量をΔ、前記基板の周波数定数をＲ、前記基板の異方性定数をＫ、として
Ｍ＝Ｋ×（ｈｘ／（２×ｔｓ））×√△
△＝（ｆｓ−ｆｅ）／ｆｓ
ｆｓ＝Ｒ／［ｔｓ＋ｔｅ２×（ρｅ／ρｘ）］
ｆｅ＝Ｒ／［ｔｓ＋ｔｅ×（ρｅ／ρｘ）］
１５．５≦Ｍ≦３６．７
の関係を満たすことを特徴とする振動素子。 In any one of Claims 1 thru | or 4,
The second excitation electrode is larger than the square in plan view,
The thickness of the substrate is ts, the total thickness of the first excitation electrode and the second excitation electrode is te, the thickness of the second excitation electrode is te2, and the thickness of the first excitation electrode is slipped. The length along the vibration direction of the vibration is hx, the density of the first excitation electrode and the second excitation electrode is ρe, the density of the substrate is ρx, the cutoff frequency of the substrate is fs, and the substrate The frequency excited by the substrate when the first excitation electrode and the second excitation electrode are arranged in fe is fe, the energy confinement coefficient of the substrate is M, the frequency reduction is Δ, and the frequency constant of the substrate is R, where K is the anisotropy constant of the substrate, M = K × (hx / ( 2 × ts ) ) × √Δ
Δ = (fs−fe) / fs
fs = R / [ts + te2 × (ρe / ρx)]
fe = R / [ts + te × (ρe / ρx)]
15.5 ≦ M ≦ 36.7
Transducer elements and satisfies the relationship.
１７．１≦Ｍ≦３５．７
の関係を満たすことを特徴とする振動素子。 In claim 5,
17.1 ≦ M ≦ 35.7
A vibration element characterized by satisfying the relationship:
前記第１の励振電極の厚み滑り振動方向と直交する方向に沿った長さをｈｚとしたとき、
１．２５≦ｈｘ／ｈｚ≦１．３１
の関係を満たすことを特徴とする振動素子。 In claim 5 or 6,
When the length along the direction orthogonal to the thickness shear vibration direction of the first excitation electrode is hz,
1.25 ≦ hx / hz ≦ 1.31
A vibration element characterized by satisfying the relationship:
前記基板は水晶基板であることを特徴とする振動素子。 In any one of Claims 1 thru | or 7,
The vibration element, wherein the substrate is a quartz substrate.
前記水晶基板がＡＴカット水晶基板であることを特徴とする振動素子。 In claim 8,
A vibrating element, wherein the quartz substrate is an AT cut quartz substrate.
前記振動素子を収容するパッケージと、
を備えていることを特徴とする振動子。 The vibration element according to any one of claims 1 to 9,
A package containing the vibration element;
A vibrator characterized by comprising:
前記振動素子を駆動する発振回路と、
を備えていることを特徴とする電子デバイス。 The vibration element according to any one of claims 1 to 9,
An oscillation circuit for driving the vibration element;
An electronic device comprising:
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013027618A JP6191152B2 (en) | 2013-02-15 | 2013-02-15 | Vibration element, vibrator, electronic device, electronic device, and moving object |
| TW102109355A TWI578585B (en) | 2012-03-27 | 2013-03-15 | Vibrator element, vibrator, electronic device, electronic apparatus, and mobile object |
| US13/849,896 US9013243B2 (en) | 2012-03-27 | 2013-03-25 | Resonator element, resonator, electronic device, electronic apparatus, and mobile object |
| CN201310098772.9A CN103368518B (en) | 2012-03-27 | 2013-03-26 | Vibrating elements, oscillator, electronic device, electronic equipment and moving body |
| CN2013201404412U CN203233372U (en) | 2012-03-27 | 2013-03-26 | Oscillating element, oscillator, electronic device, electronic apparatus and mobile object |
| US14/663,888 US20150194946A1 (en) | 2012-03-27 | 2015-03-20 | Resonator element, resonator, electronic device, electronic apparatus, and mobile object |
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|---|---|---|---|
| JP2013027618A JP6191152B2 (en) | 2013-02-15 | 2013-02-15 | Vibration element, vibrator, electronic device, electronic device, and moving object |
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| JP2014158149A JP2014158149A (en) | 2014-08-28 |
| JP2014158149A5 true JP2014158149A5 (en) | 2016-03-24 |
| JP6191152B2 JP6191152B2 (en) | 2017-09-06 |
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|---|---|---|---|---|
| JP6303372B2 (en) | 2013-10-01 | 2018-04-04 | セイコーエプソン株式会社 | Vibration element, vibrator, electronic device, electronic device, and moving object |
| JP2016140023A (en) * | 2015-01-29 | 2016-08-04 | セイコーエプソン株式会社 | Vibrating piece, vibrator, oscillation device, oscillator and mobile object |
| JP7027841B2 (en) * | 2017-11-29 | 2022-03-02 | セイコーエプソン株式会社 | Vibration devices, electronic devices and mobiles |
| JP6813065B2 (en) * | 2019-09-03 | 2021-01-13 | セイコーエプソン株式会社 | Vibration devices, electronics, and mobiles |
| JPWO2023286327A1 (en) * | 2021-07-12 | 2023-01-19 | ||
| WO2023085348A1 (en) * | 2021-11-15 | 2023-05-19 | 京セラ株式会社 | Crystal element and crystal device |
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| JP3881503B2 (en) * | 2000-09-29 | 2007-02-14 | 京セラ株式会社 | Piezoelectric vibrator and piezoelectric device equipped with the same |
| WO2007032444A1 (en) * | 2005-09-15 | 2007-03-22 | Daishinku Corporation | Crystal unit |
| JP5796355B2 (en) * | 2011-06-03 | 2015-10-21 | セイコーエプソン株式会社 | Piezoelectric vibration element, piezoelectric vibrator, electronic device, and electronic apparatus |
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