JP2014157853A - Process of manufacturing pattern formation body and pattern formation body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a process of manufacturing a pattern formation body suitable for forming a fine pattern and the pattern formation body manufactured using the same.SOLUTION: The process of manufacturing a pattern formation body includes: forming a second hard mask layer 322 on a substrate 31 provided with a first hard mask layer 321; after forming a resin layer 33 on the second hard mask layer 322, forming a resin pattern 34 in the resin layer 33 by patterning using an imprint method; after removing a remaining film of resin 37, forming a second hard mask pattern 352 by etching the second hard mask layer 322 using the resin pattern 34 as an etching mask; forming a first hard mask pattern 351 by etching the first hard mask layer 321 using the second hard mask pattern 352 as an etching mask; and etching the substrate 31 using the first hard mask pattern 351 as an etching mask.

Description

  The present invention relates to a pattern forming body manufacturing method for forming a fine pattern, and a pattern forming body manufactured using the pattern forming body manufacturing method.

  Structures in which a specific fine pattern is formed on a substrate are widely used. Examples of the structure in which a fine pattern is formed include a semiconductor device, an optical element, a wiring circuit, a recording device, a medical test chip, a display panel, a micro flow path, and the like.

  A method of optically transferring a pattern is used to form a fine pattern in a semiconductor device manufacturing process or the like. For example, a photomask in which a pattern made of an opaque material such as chrome is formed on a transparent substrate such as glass is manufactured, and this photomask is placed directly or indirectly on a semiconductor substrate coated with a photosensitive resin, so that photo The pattern of the photomask is transferred onto the substrate by irradiating light from the back surface of the mask and selectively exposing the resin in the light transmitting portion. This technique is generally called photolithography.

However, in such a pattern formation method, since the size and shape of the pattern to be formed greatly depend on the wavelength of light to be exposed, the pattern can be faithfully transferred onto a semiconductor substrate, particularly in the transfer of a fine pattern. It has become difficult.
In addition, there is a problem that the optical contrast is reduced due to the diffraction phenomenon of light and the apparatus is expensive because it requires a complicated mechanism.

These problems apply not only to the manufacture of semiconductor devices, but also to various pattern formations using photolithography methods such as displays, recording media, biochips, and optical devices.
Other methods for forming fine patterns include electron beam lithography and focused ion beam lithography.

Hereinafter, an example of a conventional typical method for forming a fine pattern on a substrate will be described with reference to FIG.
First, as shown in FIG. 1A, a resist film 13 is formed by coating a resist on a substrate 11 provided with a hard mask layer 12.
Next, as shown in FIG. 1B, the resist film 13 is patterned to form a resist pattern 14.
Next, as shown in FIG. 1C, the hard mask layer 12 is etched using the resist pattern 14 as an etching mask to form a hard mask pattern 15.
Next, as shown in FIG. 1 (d), the substrate 11 is etched using the hard mask pattern 15 as an etching mask, and the hard mask pattern 15 is removed by washing as shown in FIG. 1 (e). Thereby, the patterned substrate 16 is obtained.

  As a patterning method for the resist film 13, for example, electron beam lithography is used. In electron beam lithography, a resist pattern 14 is formed by drawing a desired pattern on the resist film 13 using an electron beam exposure apparatus and then developing the pattern.

Such an electron beam lithography method and a pattern formation method using a focused ion beam lithography method have a problem of poor throughput and an expensive apparatus.
Therefore, in recent years, a technique called an imprint method has been proposed that can transfer a fine pattern more faithfully than the conventional method (Non-Patent Document 1).

Hereinafter, an example of substrate patterning using a conventional typical optical imprint method will be described with reference to FIG.
First, as shown in FIG. 2A, a resin film 23 is formed by coating a UV curable resin on a substrate 21 provided with a hard mask layer 22.
Next, as shown in FIG. 2B, the surface on which the pattern of the mold 20 is formed is pressed against the resin film 23, and the resin film 23 is cured by irradiating UV light from the back surface of the mold 20.
Next, as shown in FIG. 2C, the mold 20 is peeled off, and the resin pattern 24 is formed.

Next, as shown in FIG. 2D, the resin residual film 27 remaining on the substrate 21 is removed.
Next, as shown in FIG. 2E, the hard mask layer 22 is etched using the resin pattern 24 as an etching mask to form a hard mask pattern 25.
Next, as shown in FIG. 2F, the substrate 21 is etched using the hard mask pattern 25 as an etching mask, and the hard mask pattern 25 is removed by washing as shown in FIG. Thereby, the patterned substrate 26 is obtained.

  According to this method, the time required for patterning the resin film and the cost of the apparatus can be greatly reduced as compared with the electron beam lithography method. However, this method requires a step of removing the residual film that is not necessary in the electron beam lithography method.

Here, the hard mask layer 22 is required to have sufficient etching resistance as an etching mask when the substrate 21 is etched.
Many substrates used for manufacturing optical elements (eg, lithium niobate substrate, sapphire substrate) have a low etching rate under general etching conditions, and the substrate 21 having a low etching rate is etched with the hard mask layer 22. It is difficult to set the selection ratio high. In order to form a pattern having a desired depth by etching such a substrate 21, a method of increasing the thickness of the hard mask layer 22 in order to prevent a part or all of the hard mask layer 22 from disappearing during the etching. There is.

  However, when the thick hard mask layer 221 is etched using the resin pattern 24 as an etching mask as shown in FIG. 3A, not only the height of the resin pattern 24 is etched during the etching as shown in FIG. As shown in FIG. 3C, the width of the hard mask pattern 223 formed on the hard mask layer 22 is etched at a portion that should not be etched, resulting in a reduction in size and a decrease in rectangularity. Or As a result, it becomes difficult to pattern the substrate 21 with high accuracy.

  Further, the resin pattern 24 is required to have sufficient etching resistance as an etching mask when the hard mask layer 22 is etched. When the hard mask layer 22 formed on the substrate 21 is thickened in order to form a pattern with a desired depth by etching the substrate 21 used for manufacturing an optical element or the like, the thick hard mask layer is formed using the resin pattern 24 as an etching mask. 221 must be etched. At this time, there are few types of resin having high resistance to the conditions for etching the hard mask layer 22, and the resin cannot be freely selected according to the product or process.

  In order to use the resin pattern 24 made of a resin having low etching resistance as an etching mask, the resin film 23 coated on the substrate 21 is thickened, and the height of the resin pattern 242 formed on the resin film 23 by molding is used. There is a method of increasing the height as shown in FIG. By increasing the height of the resin pattern 242, it is possible to prevent a part or all of the resin pattern 242 from disappearing during the etching of the hard mask layer 22, and a pattern having a desired depth is formed on the thick hard mask layer 221. Can be formed.

  However, when the height of the resin pattern 242 is increased, the aspect ratio of the resin pattern 242 is increased, and the resin pattern 242 is likely to collapse as shown in FIG. This similarly becomes a problem in electron beam lithography.

Appl. Phys. Lett. , Vol. 67, p. 3314 (1995)

  The present invention has been made to solve the problems of the pattern forming method as described above, and uses a method for manufacturing a pattern forming body suitable for forming a fine pattern, and a method for manufacturing the pattern forming body. It aims at providing the pattern formation body manufactured.

  The invention according to claim 1 of the present invention is a method of manufacturing a pattern forming body formed by forming a fine pattern on the surface of a substrate, the step of forming a first hard mask layer on the surface of the substrate, Forming a second hard mask layer on the first hard mask layer; forming a resin layer on the second hard mask layer; and patterning the resin layer by an imprint method. Forming a resin pattern; and removing a residual film of the resin layer generated at the time of forming the resin pattern, and then etching the second hard mask layer using the resin pattern as an etching mask to form a second hard mask pattern And forming the first hard mask pattern by etching the first hard mask layer using the second hard mask pattern as an etching mask. And removing the second hard mask pattern, etching the substrate using the first hard mask pattern as an etching mask, and peeling the first hard mask pattern after etching the substrate. And a step of obtaining a patterned substrate.

  According to a second aspect of the present invention, in the method for manufacturing a pattern forming body according to the first aspect, the second hard mask layer is etched under the same conditions as those for removing the remaining film of the resin layer. It is characterized by that.

  According to a third aspect of the present invention, in the method for manufacturing a pattern forming body according to the first or second aspect, the second hard mask layer comprises the second hard mask layer. Using the pattern as an etching mask for the first hard mask layer, the first hard mask layer has an etching selection ratio capable of etching until the surface of the substrate is exposed.

  According to a fourth aspect of the present invention, in the method for manufacturing a pattern forming body according to any one of the first to third aspects, the first hard mask layer comprises the first hard mask layer. The etching selectivity is such that the substrate can be etched to a predetermined depth using the first hard mask pattern as an etching mask for the substrate.

  Invention of Claim 5 of this invention is the manufacturing method of the pattern formation body of any one of Claim 1 thru | or 4, WHEREIN: The said 2nd hard mask layer is on the etching conditions which etch the said board | substrate, Etching disappears.

  The invention according to claim 6 of the present invention is the method of manufacturing a pattern forming body according to any one of claims 1 to 5, wherein the substrate is made of lithium niobate, and the first hard mask layer is chromium. The second hard mask layer is made of silicon.

  The invention according to claim 7 of the present invention is characterized in that, in the pattern forming body manufacturing method according to any one of claims 1 to 6, a light imprint method is used for patterning the resin layer. To do.

  The invention according to claim 8 of the present invention is characterized in that, in the pattern forming body manufacturing method according to any one of claims 1 to 6, a thermal imprint method is used for patterning the resin layer. To do.

  The invention according to claim 9 of the present invention is a pattern forming body, which is manufactured using the pattern forming body manufacturing method according to any one of claims 1 to 8.

  ADVANTAGE OF THE INVENTION According to this invention, the pattern formation suitable for formation of a fine pattern and the pattern formation body manufactured using this pattern formation method can be provided.

It is a schematic sectional drawing which shows an example of the conventional pattern formation method. It is a schematic sectional drawing which shows an example of the pattern formation method using the conventional optical imprint method. It is a schematic sectional drawing which shows the problem in the conventional pattern formation method. It is a schematic sectional drawing which shows the problem in the conventional pattern formation method. It is a schematic sectional drawing which shows the pattern formation method which concerns on embodiment of this invention. It is a schematic sectional drawing which shows the pattern formation method which concerns on the Example of this invention. It is a schematic sectional drawing which shows the pattern formation method which concerns on the Example of this invention.

  Hereinafter, the manufacturing method and pattern formation body of the pattern formation body in embodiment of this invention are demonstrated in detail with reference to FIG.

First, a base material 31 shown in FIG. 5A is prepared, and a first hard mask layer 321 is formed on the surface of the base material 31.
As a method for forming the first hard mask layer 321, a known thin film forming technique may be used as appropriate depending on the material selected for the first hard mask layer 321. For example, a sputtering method or the like may be used.
Further, the substrate 31 may be appropriately selected according to the application. As the substrate 31, for example, a silicon substrate, a quartz substrate, a sapphire substrate, a lithium niobate substrate, an SOI substrate, or the like may be suitably used. The first hard mask layer 321 may be a material having a high etching selectivity with the substrate 31.

Note that the thickness of the first hard mask layer is desirably 50 nm or more and 100 nm or less.
However, when the thickness of the first hard mask layer is less than 50 nm, part or all of the first hard mask layer disappears during the etching of the substrate in the step of performing anisotropic etching on the substrate described later. Thus, there is a problem that the pattern cannot be formed on the substrate with high accuracy. On the other hand, when the thickness exceeds 100 nm, the rectangularity of the pattern formed on the first hard mask layer is lowered and the dimensional accuracy is deteriorated in the step of performing anisotropic etching on the first hard mask layer described later. Before the first hard mask layer is etched until the substrate surface is exposed, a part or all of the second hard mask layer disappears, and a pattern cannot be accurately formed on the first hard mask layer. There is a bug.

Next, as shown in FIG. 5B, a second hard mask layer 322 is formed on the surface of the first hard mask layer 321 which is the surface opposite to the surface of the substrate 31.
As a method for forming the second hard mask layer 322, a known thin film forming technique may be used as appropriate depending on the material selected for the second hard mask layer 322. For example, a sputtering method or the like may be used.
The second hard mask layer 322 may be a material having a high etching selection ratio with the first hard mask layer 321.

Here, for example, when a lithium niobate substrate is used as the substrate 31, the first hard mask layer 321 is a layer made of Cr (chromium), and the second hard mask layer 322 is a layer made of Si (silicon). It is desirable to use
Lithium niobate has a nonlinear optical effect, piezoelectricity and pyroelectricity, and is suitable when the pattern forming method of the present invention is used in the manufacturing process of laser elements, piezoelectric elements, surface acoustic wave elements, electrical engineering elements, etc. .
By using a layer made of chromium for the first hard mask layer 321, the etching selectivity can be set high under general etching conditions in the step of etching the substrate 31 described later.
By using a layer made of silicon for the second hard mask layer 322, the etching selectivity can be set high under general etching conditions in the step of etching the first hard mask layer 321 described later. The thickness of the second hard mask layer 322 can be very thin (about 10 nm).

Note that the thickness of the second hard mask layer 322 is preferably in the range of 3 nm to 15 nm.
However, when the thickness of the second hard mask layer is less than 3 nm, the first hard mask layer is exposed until the substrate surface is exposed in the step of performing anisotropic etching on the first hard mask layer described later. There is a problem in that a part or all of the second hard mask layer disappears before being etched, and a pattern cannot be accurately formed on the first hard mask layer. When the thickness of the second hard mask layer exceeds 15 nm, the second hard mask layer is the first hard mask layer in the step of performing anisotropic etching on the second hard mask layer described later. There is a problem that a part or all of the resin layer disappears before being etched until the surface of the metal layer is exposed, and a pattern cannot be accurately formed on the second hard mask layer.

Next, as shown in FIG. 5C, the surface of the second hard mask layer 322 opposite to the first hard mask layer 321 is coated with a UV curable resin to form a resin film 33 (resin layer). Form.
The thickness of the resin film 33 is preferably in the range of 50 to 150 nm. However, when the thickness of the resin film is less than 50 nm, the second hard mask layer exposes the surface of the first hard mask layer in the step of performing anisotropic etching on the second hard mask layer described later. There is a problem that part or all of the resin layer disappears before etching until the pattern is formed on the second hard mask layer with high accuracy. Further, when the thickness of the resin film exceeds 150 nm, there is a problem that the aspect ratio of the resin pattern formed on the resin film becomes high and the resin pattern is easily collapsed.

  Next, as shown in FIG. 5 (d), the surface on which the pattern of the mold 30 is formed is pressed against the resin film 33, and the pattern shape of the mold 30 is imprinted. The resin film 33 is cured by irradiating UV light from a surface opposite to the formed surface.

  Next, as shown in FIG. 5E, the mold 30 is peeled off. Thereby, the resin pattern 34 is obtained on the second hard mask layer 322.

Here, if the thickness of the second hard mask layer 322 is very thin, the height of the resin pattern 34 serving as an etching mask is lowered in the step of performing anisotropic etching on the second hard mask layer 322 described later. (For example, 100 nm or less), and the aspect ratio of the resin pattern 34 can be set low. For this reason, the resin pattern 34 can be accurately formed without the pattern collapsing.
The aspect ratio of the resin pattern 34 formed on the resin film 33 is desirably 2 or less. However, when the aspect ratio exceeds 2, there is a problem that the resin pattern is easily collapsed.

Next, as shown in FIG. 5F, the remaining film 37 of the resin film 33 remaining on the second hard mask layer 322 is removed.
For removing the remaining film 37, a known method may be used as appropriate, and for example, an O 2 plasma etching method may be used. Moreover, the conditions for removing the residual film may be adjusted as appropriate according to the resin used.

Next, as shown in FIG. 5G, anisotropic etching is performed on the second hard mask layer 322 using the resin pattern 34 as an etching mask to form a second hard mask pattern 352.
As the etching of the second hard mask layer 322, a known etching method may be used as appropriate, and for example, dry etching may be used. Etching conditions may be adjusted as appropriate in accordance with the resin used and the second hard mask layer 322.

  Here, if the conditions for removing the residual film 37 and the conditions for etching the second hard mask layer 322 are set to be the same, both the removal of the residual film 37 and the etching of the second hard mask layer 322 are performed in one step. Can be done.

Next, as shown in FIG. 5H, anisotropic etching is performed on the first hard mask layer 321 to form the first hard mask pattern 351 using the second hard mask pattern 352 as an etching mask. .
As the etching of the first hard mask layer 321, a known etching method may be used as appropriate, and for example, dry etching may be used. Etching conditions may be adjusted as appropriate depending on the first hard mask layer 321 and the second hard mask layer 322 used.

Here, by setting the etching selectivity of the first hard mask layer 321 to the second hard mask layer 322 sufficiently high, the thickness of the second hard mask pattern 352 is very thin such as about 10 nm. However, the first hard mask layer 321 can be accurately etched without the second hard mask pattern 352 disappearing in the middle.
Note that the etching selectivity of the first hard mask layer 321 to the second hard mask layer 322 is desirably 5 or more. However, when the etching selectivity is less than 5, in the step of performing anisotropic etching on the first hard mask layer, the second hard mask layer is etched before the surface of the substrate is exposed. A part or all of the hard mask layer disappears, resulting in a problem that a pattern cannot be accurately formed on the first hard mask layer. Therefore, the second hard mask layer is etched until the surface of the substrate is exposed by using the second hard mask pattern made of the second hard mask layer as an etching mask for the first hard mask layer. Any material having an etching selectivity that can be used.

  Next, the second hard mask pattern 352 remaining on the first hard mask pattern 351 is removed. As a method for removing the second hard mask pattern 352, a known method may be used as appropriate, and for example, dry etching or wet etching may be used.

Next, as shown in FIG. 5I, anisotropic etching is performed on the substrate 31 using the first hard mask pattern 351 as an etching mask.
As the etching of the substrate 31, a known etching method may be used as appropriate, and for example, dry etching may be used. The etching conditions may be adjusted as appropriate depending on the substrate 31 and the first hard mask layer 351 used.
Here, the first hard mask layer preferably has an etching selectivity of the substrate of 2 or more with respect to the first hard mask layer. However, when the etching selectivity is less than 2, in the step of performing anisotropic etching on the substrate, part or all of the first hard mask layer disappears before the substrate is etched to a predetermined depth. As a result, there is a problem that the pattern cannot be accurately formed on the substrate. Therefore, the first hard mask layer only needs to have an etching selectivity that allows the substrate to be etched to a predetermined depth using the first hard mask pattern made of the first hard mask layer as an etching mask for the substrate.

Here, if the conditions for removing the second hard mask pattern 352 and the conditions for etching the substrate 31 are the same, both the removal of the second hard mask pattern 352 and the etching of the substrate 31 are performed in one step. Can do.
After anisotropic etching is performed on the substrate 31, as shown in FIG. 5J, the first hard mask pattern 351 is removed by cleaning. Thereby, a patterned substrate 36 is obtained.

  Hereinafter, the method for producing a pattern-formed body of the present invention will be described with reference to FIGS. 6 and 7 with reference to FIGS. 6 and 7 and an example of producing a pattern-formed body by producing a mold for optical imprint. The manufacturing method of the pattern formation body of the Example of this invention is not limited to the following Example.

First, a quartz substrate was used as the mold substrate.
As shown in FIG. 6A, a chromium layer 42 having a chromium film 30 nm formed as a hard mask layer is formed on a quartz substrate 41, and a positive resist FEP-171 (Fuji Film Electronics Materials) is formed on the chromium layer 42. The resist film 43 was coated to a thickness of 200 nm.

  Next, as shown in FIG. 6B, after the electron beam is irradiated to the resist film 43 with an electron beam at a dose of 10 μC / cm 2 with an electron beam drawing apparatus, a developing process using a developer, a rinsing process, and The rinse solution was dried to obtain a resist pattern 44. Here, a TMAH aqueous solution was used as a developing solution, and pure water was used as a rinsing solution.

  Next, as shown in FIG. 6C, the chromium layer 42 was etched by dry etching using an ICP dry etching apparatus using the resist pattern 44 as an etching mask, and a chromium pattern 45 was obtained. At this time, the etching conditions for the chromium layer 42 were Cl2 flow rate 40 sccm, O2 flow rate 10 sccm, He flow rate 80 sccm, pressure 30 Pa, ICP power 120 W, and RIE power 50 W.

  Next, as shown in FIG. 6D, the resist pattern 44 was peeled off by O 2 plasma ashing (conditions: O 2 flow rate 500 sccm, pressure 30 Pa, RIE power 1000 W).

  Next, as shown in FIG. 6E, the quartz substrate 41 was etched by dry etching using an ICP dry etching apparatus using the chromium pattern 45 as an etching mask. At this time, the etching conditions of the quartz substrate were C4F8 flow rate 10 sccm, O2 flow rate 10-55 sccm, Ar flow rate 75 sccm, pressure 2 Pa, ICP power 20 W, and RIE power 550 W.

Next, as shown in FIG. 6F, after the remaining chromium pattern was wet cleaned, a mold release treatment was performed using a fluorine-based mold release agent.
From the above, the quartz mold 20 was obtained.

Next, a fine pattern was formed on the lithium niobate substrate using the quartz mold 20.
First, as shown in FIG. 7A, a chromium layer 521 is formed on a lithium niobate substrate 51 as a first hard mask layer to form a chromium layer 521 having a thickness of 200 nm. Silicon was formed to a thickness of 10 nm as a second hard mask to form a silicon layer 522.

  Next, as shown in FIG. 7B, a UV curable resin PAK-01 (manufactured by Toyo Gosei Co., Ltd.) was coated on the silicon layer 522 to a thickness of 100 nm to form a resin layer 53.

  Next, as shown in FIG. 7 (c), the mold 20 is pressed against the resin layer 53 on the lithium niobate substrate 51 so that the surface on which the pattern of the mold 20 is formed is opposed, and from the back side of the mold 20. The resin layer 53 was cured by performing exposure at 20 mJ / cm 2 using a high pressure mercury lamp as a light source.

  Next, as shown in FIG. 7D, the mold 29 was peeled off to obtain a resin pattern 54 on the lithium niobate substrate 51.

Next, as shown in FIG. 7E, the remaining film 57 was removed by dry etching using an ICP dry etching apparatus, and the silicon layer 522 was etched using the resin pattern 54 as an etching mask. At this time, the conditions for removing the remaining film 57 and etching the silicon layer 522 were CF4 flow rate 30 sccm, C4F8 flow rate 20 sccm, pressure 5 Pa, ICP power 500 W, and RIE power 50 W.
In this step, the remaining film 57 was reliably removed, and the exposed silicon layer 522 could be etched. At this time, since the thickness of the silicon layer is as thin as 10 nm, even if the height of the resin pattern is reduced during the etching, the silicon pattern 552 is not exposed without exposing a portion of the silicon layer that is not to be etched. Could be formed.

  Next, as shown in FIG. 7F, the chromium layer 521 was etched by dry etching using an ICP dry etching apparatus using the silicon pattern 552 as an etching mask to form a chromium pattern 551. At this time, the etching conditions of the chromium layer 521 were Cl2 flow rate 40 sccm, O2 flow rate 10 sccm, He flow rate 80 sccm, pressure 10 Pa, ICP power 120 W, and RIE power 50 W.

  Next, as shown in FIG. 7G, the lithium niobate substrate 51 was etched by dry etching using an ICP dry etching apparatus with the chromium pattern 551 as an etching mask. At this time, the etching conditions of the lithium niobate substrate 51 were C4F8 flow rate 50 sccm, Ar flow rate 50 sccm, pressure 5 Pa, ICP power 1000 W, and RIE power 200 W. Further, the remaining silicon pattern 552 was etched and removed during the etching of the lithium niobate substrate 51.

  Next, as shown in FIG. 7 (h), the patterned substrate 56 could be obtained by cleaning the etched lithium niobate substrate 51 and removing the remaining chromium pattern 551.

  The pattern forming method of the present invention is expected to be used in a wide range of fields where a fine pattern is required. For example, an optical element, an imprint mold, a photomask, a semiconductor device, a wiring circuit (such as a dual damascene wiring circuit), a recording device (such as a hard disk or a DVD), a medical test chip (for DNA analysis) Etc.), displays (diffusion plates, light guide plates, etc.), microchannels, etc. are expected.

DESCRIPTION OF SYMBOLS 11 ... Substrate 12 ... Hard mask layer 13 ... Resist film 14 ... Resist pattern 15 ... Hard mask pattern 16 ... Patterned substrate 20 ... Mold 21 ... Substrate 22 ... Hard mask layer 221 ... Thick hard mask layer 222 ... Thick etched Hard mask layer 223: Hard mask pattern with poor dimensional accuracy and rectangularity 23 ... Resin film 24 ... Resin pattern 241 ... Deformed resin pattern 242 ... Collapsed resin pattern 25 ... Hard mask pattern 26 ... Patterned substrate 27 ... Residual film DESCRIPTION OF SYMBOLS 30 ... Mold 31 ... Board | substrate 321 ... 1st hard mask layer 322 ... 2nd hard mask layer 33 ... Resin film 34 ... Resin pattern 351 ... 1st hard mask pattern 352 ... 2nd hard mask pattern 36 ... Patterned Substrate 37 ... remaining Film 41 ... Quartz substrate 42 ... Chromium layer 43 ... Resist film 44 ... Resist pattern 45 ... Chromium pattern 51 ... Lithium niobate substrate 521 ... Chromium layer 522 ... Silicon layer 53 ... Resin layer 54 ... Resin pattern 551 ... Chromium pattern 552 ... Silicon Pattern 56 ... Patterned lithium niobate substrate 57 ... Residual film

Claims (9)

A method of manufacturing a pattern forming body formed by forming a fine pattern on the surface of a substrate,
Forming a first hard mask layer on the surface of the substrate;
Forming a second hard mask layer on the first hard mask layer;
Forming a resin layer on the second hard mask layer;
Forming a resin pattern by patterning the resin layer by an imprint method;
Removing the residual film of the resin layer generated during the formation of the resin pattern, and then etching the second hard mask layer using the resin pattern as an etching mask to form a second hard mask pattern;
Etching the first hard mask layer using the second hard mask pattern as an etching mask to form a first hard mask pattern;
After removing the second hard mask pattern, the substrate was etched using the first hard mask pattern as an etching mask, and after the substrate was etched, the first hard mask pattern was peeled off and patterned. Obtaining a substrate;
A method for producing a pattern forming body, comprising:   The method for producing a pattern forming body according to claim 1, wherein the second hard mask layer is etched under the same conditions as those for removing the remaining film of the resin layer.   The second hard mask layer is formed by using the second hard mask pattern made of the second hard mask layer as an etching mask for the first hard mask layer, and using the first hard mask layer as a surface of the substrate. 3. The method for producing a pattern forming body according to claim 1, wherein the pattern forming body has an etching selection ratio capable of etching until it is exposed.   The first hard mask layer has an etching selection ratio capable of etching the substrate to a predetermined depth using the first hard mask pattern made of the first hard mask layer as an etching mask of the substrate. The manufacturing method of the pattern formation body of any one of Claims 1 thru | or 3 to do.   5. The method of manufacturing a pattern forming body according to claim 1, wherein the second hard mask layer is etched away under an etching condition for etching the substrate. 6.   6. The device according to claim 1, wherein the substrate is made of lithium niobate, the first hard mask layer is made of chromium, and the second hard mask layer is made of silicon. A manufacturing method of a pattern formation object.   The method for producing a pattern forming body according to any one of claims 1 to 6, wherein an optical imprint method is used for patterning the resin layer.   The method of manufacturing a pattern forming body according to claim 1, wherein a thermal imprint method is used for patterning the resin layer.   A pattern formed body manufactured using the method for manufacturing a pattern formed body according to claim 1.

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