JP2008198746A - Imprint mold, imprint evaluating device employing the same, forming method of resist pattern and manufacturing method of imprint mold - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imprint mold for evaluation of transferring property, which effects the qualification of imprint method efficiently, and its manufacturing method. <P>SOLUTION: The imprint mold is provided with recessed and projected patterns, formed on a substrate while having different depth, width and configuration. In this case, the imprint mold is manufactured by a method wherein a resist is formed on the substrate and a plurality of recessed and projected patterns with different depths are formed on the resist to effect dry etching treatment from the surface of the resist with a plurality of recessed and projected patterns formed thereon toward the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to an imprint mold, an imprint evaluation apparatus using the imprint mold, a resist pattern forming method, and an imprint mold manufacturing method. More specifically, the present invention relates to an imprint mold suitable for setting and evaluating conditions in the imprint method, an imprint evaluation apparatus, and a method for manufacturing the imprint mold, and also suitable formation of a resist pattern using the imprint mold. Regarding the method.

In recent years, as a method for forming a fine pattern, a technique called an imprint method (or nanoimprint method), which is very simple but suitable for mass production, has been proposed that can faithfully transfer a fine pattern (non-patent) Reference 1). Here, although there is no strict distinction between the imprint method and the nanoimprint method, a nanometer order method is often referred to as a nanoimprint method, and other micrometer order methods are often referred to as an imprint method. Here, all of them are referred to as an imprint method.

In the imprint method, a mold called a mold (which may be called a template) in which a pattern corresponding to a negative / positive reversal image of a pattern to be finally transferred is formed (it is not necessary to be formed of metal, but is formed of a quartz substrate or silicon). Pattern transfer is performed by embossing a resin on the substrate and curing the resin in that state. A thermal imprint method (see Non-Patent Document 1 and Non-Patent Document 2) in which a resin is cured by heat, an optical imprint method (see Patent Document 1) in which a resin is cured by ultraviolet rays, and the like have been proposed.

FIG. 7 is a process sectional view showing a method of forming a pattern by a thermal imprint method. A mold is prepared in which a silicon oxide film 102 having a recess of a mirror image of a pattern to be formed is formed on the surface of a silicon substrate 101 (a). Next, a resist 112 is formed on the silicon substrate 111 (b). Next, the silicon substrate 111 on which the mold 100 and the resist 112 are formed is heated by pressure (c). Thereafter, when the mold 100 is released, irregularities corresponding to a desired pattern are formed in the resist 112 on the silicon substrate 111 (d). Finally, a desired resist pattern is formed by performing RIE (reactive ion etching) processing using oxygen (e).

FIG. 8 is a process sectional view showing a method of forming a pattern by the optical imprint method. First, a quartz mold 120 having a recess of a mirror image of a pattern to be formed is prepared (a). Next, a resist 112 is formed on the silicon substrate 111 (b). Next, the quartz mold 120 and the silicon substrate 111 on which the resist 112 is formed are pressure-bonded, and UV (ultraviolet) irradiation is performed from the back surface of the quartz mold 120 (c). Thereafter, when the quartz mold 120 is released, irregularities corresponding to a desired pattern are formed in the resist 112 on the silicon substrate 111 (d). Finally, a desired resist pattern is formed by performing RIE (reactive ion etching) processing using oxygen (e).

In the imprint method, the filling property of the resin into the mold pattern is extremely important. By applying pressure when embossing the resin, the groove of the mold pattern is filled with the resin, so a pattern with a high aspect ratio (pattern depth / pattern width is large) or a low aspect ratio In the mold of the opening pattern, filling failure may occur and the resin pattern may not be formed. This is shown in FIG. 9 (see Non-Patent Document 3).

On the other hand, in the imprint method, the releasability between the mold and the resin pattern formed on the substrate is also extremely important. As shown in FIG. 10, when the silicon substrate 131 on which the resin (resist) 132 is formed and the mold 130 are pressed (a) and the mold and the resin are separated, most of the resin pattern is caused by adhesion and friction between the mold and the resin. In some cases, the resin pattern may be broken (b), a part of the resin pattern may be folded (c), or the resin may be stretched (d). This is considered to occur because the surface energy of the mold or resin is large (adhesion is large).

In order to avoid the above-described destruction of the mold pattern, a method has been proposed in which a fluoropolymer having a small surface energy is formed on the mold surface as a release layer to improve the mold release property between the mold and the resin (Non-patent Document 2). reference).

However, even if a release layer is formed on the mold surface as described above to reduce the adhesion with the resin, the adhesion does not become completely zero. In particular, in a pattern with a high aspect ratio (pattern depth / pattern width is large), the contact area between the mold groove and the resin filled therein becomes large, and therefore the adhesive force exceeds the fracture stress of the resin material. The resin pattern is destroyed. This point will be described with reference to FIG. For example, as shown in FIG. 11A, when a substrate 141 on which a resin 142 is formed is imprinted with a mold 140 having patterns having different aspect ratios, a pattern with a high aspect ratio as shown in FIG. As a result, the pattern of the resin 142 is destroyed at the time of mold release, and the convex portion of the resin 142 is left stuck in the mold. This phenomenon is a phenomenon that can be seen in both optical imprinting and thermal imprinting, but becomes prominent when the aspect ratio is approximately 3 or more.

According to a report by Professor Hirai of Osaka Prefectural University, it is known that such a resin pattern breaks at the base of the resin pattern where stress inside the resin is concentrated at the time of mold release (see Non-Patent Document 4). . According to this report, as shown in FIG. 12, a stress concentration portion 154 is formed at the edge of the concave portion of the concave and convex mold 150, and the resin 152 is left behind due to this portion.

In the imprint method, the evaluation that combines the above-described filling property and releasability is called transferability. Although some types of condition parameters differ between thermal imprint method and optical imprint method, in order to obtain good transferability in any case, resin selection, resin initial film thickness, resin temperature, imprint pressure, It is necessary to optimize various condition parameters such as pressurization speed, imprint holding time, mold release speed, mold release processing material, mold release processing method, wavelength of UV light, UV irradiation energy, and the like.
JP 2000-194142 A S. Y. Chou et al. Appl. Phys. Lett. , Vol. 67, 1995, P3314 "Thorough explanation of nanoimprint technology", Electric Journal, November 22, 2004, PP20-38 Y. Hirai et al. J. et al. Vac. Sci. Technol. B 22 (6), Nov / Dec 2004 Y. Hirai, et al. J. et al. Vac. Sci. Technol. B 21 (6), Nov / Dec 2003

However, since the optimum parameters of the condition parameters of these imprint conditions differ depending on the pattern shape, width, and depth, until now, conditions have been determined only for the pattern (shape, width, depth) that is actually to be transferred. However, when there are many types of patterns to be transferred, there is a problem that a great amount of time, resin material, and mold are consumed. Further, until now, when the pattern is different, the mold to be used is different and the imprint conditions are also different, and there is a problem that the transferability cannot be quantitatively evaluated.

The present invention has been made to solve the above-described problems. In the imprint method, it is possible to increase the efficiency in terms of time and cost for setting imprint conditions, or quantitative transfer performance with respect to imprint conditions. It is an object of the present invention to provide an imprint mold that can be evaluated and a method for manufacturing the same.

In order to solve the above problems, in one embodiment of the present invention, an imprint mold having a concavo-convex pattern formed on a substrate, wherein concavo-convex patterns having different depths, widths or shapes are formed. An imprint mold is provided. In the present specification, the “concavo-convex pattern” means a three-dimensional structure pattern, and is not limited to a rectangular groove pattern, but a pattern having a step having an arbitrary shape (for example, a cone shape) It is defined as including a case where the step is multistage.

In order to solve the above problem, in one embodiment of the present invention, an imprint mold having a concavo-convex pattern formed on a substrate, wherein the concavo-convex pattern having different depths is formed on the substrate, An imprint mold is provided in which the depth of the concavo-convex pattern increases stepwise in the predetermined axial direction.

In order to solve the above problems, in one embodiment of the present invention, an imprint mold having a concavo-convex pattern formed on a substrate, wherein the concavo-convex pattern having different widths is formed on the substrate. An imprint mold is provided in which the width of a concavo-convex pattern is narrowed in a stepwise manner in a predetermined axial direction.

In order to solve the above problems, in one embodiment of the present invention, an imprint mold having a concavo-convex pattern formed on a substrate, wherein the concavo-convex pattern is formed on the substrate, and a predetermined pattern on the substrate is provided. An imprint mold is provided in which concave and convex patterns having different shapes are arranged in parallel in the axial direction.

In order to solve the above-described problem, in one embodiment of the present invention, an imprint mold having a concavo-convex pattern formed on a substrate, wherein a predetermined axial direction on the substrate is an X axis, and is orthogonal to the X axis. The axis to be used is the Y axis, and one parameter selected from the group consisting of the depth, line width, and shape of the concavo-convex pattern is changed in the X-axis direction to select from the group consisting of the depth, line width, and shape of the concavo-convex pattern Another imprint mold is characterized in that the other one parameter is changed in the Y-axis direction and the concavo-convex pattern is arranged in an XY matrix.

Moreover, in order to solve the said subject, in one Embodiment of this invention, the imprint evaluation apparatus using the imprint mold in any one of the said is provided.

In order to solve the above-mentioned problems, in one embodiment of the present invention, the imprint mold described in any one of the above is pressed against a substrate on which a resist is formed to form a resist, and the formed resist is cured. A method for forming a resist pattern is provided, wherein the imprint mold is released from the cured resist.

In the resist pattern forming method, the imprint mold may be washed before pressure contact.

In order to solve the above problems, in one embodiment of the present invention, a resist is formed on a substrate, a plurality of uneven patterns having different depths are formed on the resist, and a resist having a plurality of uneven patterns formed thereon. A method for producing an imprint mold is provided, wherein a dry etching process is performed from the surface of the substrate toward the substrate.

In the method for manufacturing an imprint mold, the formation of the plurality of concave and convex patterns having different depths may change the dose amount in electron beam drawing.

Moreover, in the said imprint mold manufacturing method, formation of the some uneven | corrugated pattern from which the depth differs may change an acceleration voltage in electron beam drawing.

In the method for manufacturing an imprint mold, the formation of the plurality of concave and convex patterns having different depths may change the dose amount in ion beam drawing.

In the above-described imprint mold manufacturing method, the formation of the plurality of uneven patterns with different depths may change the acceleration voltage in ion beam drawing.

In the method of manufacturing an imprint mold, the exposure amount may be changed in laser drawing to form a plurality of uneven patterns having different depths.

In order to solve the above-mentioned problem, in one embodiment of the present invention, a substrate is prepared, and a plurality of concave and convex patterns having different depths are formed by irradiating the surface of the substrate with a focused ion beam. A method for manufacturing an imprint mold is provided.

In the imprint mold manufacturing method, the formation of the plurality of concave and convex patterns having different depths may change the dose amount of the ion beam.

In the imprint mold manufacturing method, the substrate surface may be scratched with an AFM probe.

In the imprint mold of the present invention, patterns having different pattern types, widths, and depths are arranged in an XY matrix, so that the transferability including the fillability and releasability in imprint can be quantitatively evaluated. In addition, since conditions such as imprinting and mold release processing can be set efficiently, it is possible to increase efficiency in terms of costs such as time and material costs. Further, if the evaluation apparatus of the present invention is used, it is possible to quantitatively evaluate transferability including filling property and releasability in imprinting, and further, it is efficient to determine conditions such as imprinting and release processing. Therefore, it is possible to increase the efficiency in terms of costs such as time and material costs.

Hereinafter, an imprint mold of the present invention will be described with reference to the drawings.

In the imprint mold of the present invention, chip regions having various patterns are formed on a substrate, and at least the chip regions are formed with a large number of recesses as shown in FIG. The shape and depth, or the shape and width, or the width and depth of the concave pattern are different. In one example, chips arranged so that the pattern type is different in the X direction and the depth is different in the Y direction are arranged at a plurality of locations on the mold with different reduction ratios. The chip reduction ratio corresponds to the pattern width. Of the pattern type, depth, and width, which parameters are arranged in an XY matrix is arbitrary, but is appropriately determined according to the purpose.

The substrate material used for the substrate is not particularly limited. For example, as the substrate material, silicon, silicon oxide, silicon carbide, nickel, aluminum, alumina, quartz glass, borosilicate glass, diamond, titanium, chromium, or the like is used. Also good. For this reason, the imprint mold of the present invention is not limited to a specific imprint method, but a thermal imprint method in which a pattern is transferred to a thermoplastic resin, a photo imprint method in which a pattern is transferred to a photocurable resin, heat or light. Substrate materials suitable for each can be selected, such as a room temperature imprint method in which patterns are transferred to HSQ (Hydrogen Silses Quioxane) which is not required, and a direct imprint method in which patterns are directly transferred to metal or glass.

Hereinafter, the imprint mold manufacturing method of the present invention will be described with reference to FIGS.

One of the imprint mold manufacturing methods of the present invention is characterized by patterning a resist on the surface of the substrate, performing a dry etching process on the substrate from the patterned resist side, and stripping the resist remaining after the dry etching. This is an imprint mold manufacturing method.

<Resist patterning>
First, a substrate 161 that finally becomes a molding material is prepared (FIG. 1A). Subsequently, a resist 162 is applied to the surface of the substrate 161 (FIG. 1B). A resist suitable for the patterning method described later is selected. When electron beam drawing is used for subsequent patterning, an electron beam resist is selected. When an ion beam drawing machine is used, an ion beam resist is selected. When a laser drawing machine is used, a photoresist is selected.

Next, the resist 162 is patterned at different depths. When an electron beam drawing machine is used for patterning, the dose amount of the electron beam may be increased at a portion where the groove pattern of the resist after development is desired to be deepened, and the dose amount may be reduced at a portion where the resist pattern is desired to be shallow.

Further, when an electron beam lithography machine is used for patterning the resist 162, the acceleration voltage of the electron beam may be increased at a portion where the resist pattern after development is desired to be deepened, and the acceleration voltage may be reduced at a portion where the resist pattern is desired to be shallow.

In the case of using an ion beam drawing machine for patterning the resist 162, the dose amount of the ion beam may be increased at a portion where the resist pattern after development is desired to be deepened and the dose amount may be reduced at a portion where the resist pattern is desired to be shallow.

In the case of using an ion beam drawing machine for patterning the resist 162, the acceleration voltage of the ion beam may be increased in a portion where the resist pattern after development is desired to be deepened, and the acceleration voltage may be reduced in a portion where the resist pattern is desired to be shallow.

In the case of using a laser drawing machine for patterning the resist 162, the exposure amount of the laser may be increased at a portion where the resist pattern after development is desired to be deepened, and the exposure amount may be reduced at a portion where the resist pattern is desired to be shallow.

In this way, the resist 162 is patterned so as to have groove patterns having different desired depths (FIG. 1C).

<Dry etching treatment from the resist side to the substrate>
By performing the dry etching process on the substrate from the surface on which the resist 162 is patterned by the above-described method, the pattern formed by the resist is transferred to the substrate (FIG. 1D). At this time, since the resist remains in the deep part of the resist pattern because the remaining resist is small, the substrate is exposed quickly, so that the substrate is etched for a long time. Therefore, the pattern of the substrate after etching becomes deep in the deep part of the resist pattern, and the pattern of the substrate after etching can be made shallow in the part where the resist pattern is shallow.

The etching process may be anisotropic etching (vertical etching), and for example, dry etching can be suitably used. As the dry etching apparatus, an ICP type dry etching apparatus, an RIE type dry etching apparatus, an ECR type dry etching apparatus, a microwave type dry etching apparatus, a parallel plate type dry etching apparatus, a helicon type dry etching apparatus, or the like can be used.

The gas used for dry etching may be appropriately selected according to the selected substrate material. For example, a gas containing a halogen group atom such as fluorine, chlorine, bromine (CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , SF ₆ , Cl ₂ , BCl ₃ , HCl, HBr , I ₂ ) or a mixed gas may be used depending on the substrate material. In addition, a gas such as O ₂ , N ₂ , H ₂ , Ar, or He may be added to adjust the etching shape and the resist selectivity.

For example, when dry etching is performed using silicon as a substrate material, it is preferable to use a gas containing fluorine, chlorine, bromine, or the like. Further, when dry etching is performed using aluminum, chromium, oxides thereof, and nitrides as a substrate material, a gas containing chlorine is preferably used. Further, when dry etching is performed using a material containing SiO ₂ as a substrate material, a gas containing fluorine, chlorine, or the like is preferably used.

<Removal of resist remaining after dry etching>
When the resist 162 remains after the dry etching described above, oxygen plasma ashing, wet cleaning, or the like is used to remove the resist 162 (FIG. 1E).

<Pattern patterning directly on mold material>
According to another embodiment of the imprint mold manufacturing method of the present invention, patterning is directly performed on a mold material. As shown in FIG. 2, the substrate 161 is directly patterned to form a mold 160 (FIG. 2B).

In order to directly pattern patterns having different shapes, depths, and widths on a mold, it is possible to perform processing using a focused ion beam (FIB). At this time, the dose depth of the ion beam is used as a parameter, and the pattern depth can be controlled by increasing the dose amount in a portion where a deep pattern is desired to be excavated and decreasing the dose amount in a portion where a shallow pattern is desired to be excavated.

Alternatively, direct patterning on the mold is also possible by scratching with an AFM probe (probe) using an AFM (Atomic Force Microscope).

<Pattern layout of transferability evaluation mold>
FIG. 3 shows an example in which the pattern of the transferability evaluation mold is arranged.

As shown in FIGS. 3B and 3C, patterns having different shapes are arranged in the X direction, and patterns having the same shape pattern and different depths are arranged in the Y direction by the method described above.

The width of each pattern in the chip is made uniform to a specific size, and a chip having a different width is manufactured by enlarging or reducing the entire chip (FIG. 3A).

At this time, the shape, depth, and width of the pattern may be used as parameters, and their arrangement may be arbitrarily changed according to the evaluation method.

As described above, the imprint mold of the present invention can be produced, and imprint transferability can be evaluated using the mold of the present invention.

<Example 1>
A Si mold was manufactured as an imprint mold for thermal imprinting. The manufacturing method of an imprint mold is shown in FIG.

First, a 4-inch silicon wafer was prepared as an imprint mold substrate (corresponding to FIG. 1A).

Next, the silicon wafer is coated with a positive electron beam resist (ZEP520 / manufactured by ZEON Corporation) to a thickness of 500 nm (corresponding to FIG. 1B), and the dose is obtained using an electron beam drawing apparatus (manufactured by JEOL). Was drawn in the range of 10 to 100 μC / cm 2, and resist patterns having different pattern depths (depth of 10 to 10 μm) were formed by development (corresponding to FIG. 1C).

Next, the silicon substrate was etched by anisotropic dry etching using an ICP dry etching apparatus to form uneven patterns with different pattern depths (depth 50 to 450 nm) (corresponding to FIG. 1D). ). The anisotropic etching conditions were Cl ₂ flow rate 30 sccm, O ₂ flow rate 5 sccm, Ar flow rate 80 sccm, pressure 2 Pa, ICP power 400 W, and RIE power 130 W.

Next, the resist was peeled off by O ₂ plasma ashing (conditions: O 2 flow rate 500 sccm, pressure 30 Pa, RF power 1000 W) to produce a Si mold (corresponding to FIG. 1 (e)).

In this manner, chips having pattern groups having 7 different pattern shapes in the X direction and 10 different pattern depths (0.1 to 10 μm) in the Y direction were arranged. In addition, three types of pattern group chips having a pattern width of 10 μm, 1 μm, and 0.5 μm were arranged at three locations on the mold. (Figure 3)

<Example 2>
Hereinafter, the thermal imprint method according to the present embodiment will be described with reference to FIG. First, before thermal imprinting, the pattern surface of the Si mold 200 was immersed in a fluorine-based surface treatment agent EGC-1720 (manufactured by Sumitomo 3M) as a release agent (FIG. 4A). Next, a 4-inch silicon substrate 201 was prepared as a transfer substrate to be imprinted, and a thermoplastic resin PMMA (polymethyl methacrylate) was coated on the silicon substrate 201 to a thickness of 20 μm (FIG. 4B). . Next, the Si mold 200 was thermally imprinted on the thermoplastic resin PMMA (FIG. 4C), and the Si mold was released (FIG. 4D). At this time, the thermal imprint conditions were a substrate and mold temperature of 110 ° C., a press pressure of 10 MPa, and a holding time of 1 minute.

FIG. 5 shows a chart relating to the transfer result with respect to the shape and depth of the pattern in a chip having a pattern width of 0.5 μm of the Si mold 200 used for imprinting. A circle indicates that the resin pattern is transferred well, and a cross indicates that the resin pattern is not transferred.

At this time, when determining the imprint transfer result, observation is performed with a scanning electron microscope, and the depth of the pattern of the Si mold is determined by using a scanning electron microscope to obtain a cross-section of another Si mold prepared by the same method. It was measured.

From this result, the line pattern of types 1 to 4 can be transferred even with a relatively deep pattern (aspect ratio of 2 to 3), whereas the hole pattern of types 5 to 7 is a shallow pattern (aspect ratio of about 1). It turns out that it can only transfer. From the result of observation of the transfer pattern, it was found that the portion where the transfer was not possible was in a state where the resin was peeled off at the time of release as shown in FIG.

<Example 3>
From the result of Example 2, since it is considered that the transfer failure has a problem in the releasability, the steps of sulfuric acid cleaning and UV ozone cleaning were added before the release processing of the Si mold. Other mold release processing methods and imprint conditions are the same as those in the second embodiment.

Similar to Example 2, FIG. 6 shows a chart relating to the transfer result with respect to the shape and depth of the pattern in a chip having a pattern width of 0.5 μm of the Si mold used for imprinting. A circle indicates that the resin pattern is transferred well, and a cross indicates that the resin pattern is not transferred.

From this result, as compared with Example 2, all the patterns are well transferred to a deeper pattern. This can be considered that the cleaning of the Si mold before the mold release treatment sufficiently removed organic substances from the Si surface, and the effect of the mold release treatment with the mold release agent was enhanced.

From the above, it was shown that transferability can be quantitatively evaluated by the shape, depth and width of the pattern using the mold of the present invention.

<Example 4>
Using quartz as the substrate material, an imprint mold is produced in the same manner as in Example 1, mold release treatment and cleaning treatment are performed in the same manner as in Examples 2 and 3, optical imprint is performed, and evaluation is performed. It was. As a result, it was confirmed that a resin pattern with a high aspect ratio can be transferred by adding a mold cleaning process before the mold release process, as in the case of thermal imprinting using a Si mold.

The imprint mold of the present invention can be applied to a wide range of fields that require fine pattern formation. For example, semiconductor integrated circuits, display members such as diffusion plates and light guide plates, and high-density recording such as hard disks and DVDs. It can be expected to be used for forming various patterns of media, biochips such as DNA chips, optical parts such as diffraction gratings and holograms, and the like.

Sectional drawing which shows the manufacturing process of the mold of this invention Sectional drawing which shows the manufacturing process of the mold of this invention Example of mold of the present invention Process sectional drawing which shows process of thermal imprint in Example 2 Chart showing an example of the transfer result of Example 2 (chip having a pattern width of 0.5 μm) FIG. 5 is a table showing an example of a transfer result of Example 3 (chip having a pattern width of 0.5 μm). Process sectional drawing which shows pattern formation method by thermal imprint method Process sectional view showing pattern formation method by optical imprint method Sectional drawing which shows the filling defect at the time of the mold pressurization in the imprint method Sectional drawing which shows the mold release defect at the time of mold release in the imprint method Sectional view showing pattern destruction when mold is released in imprint method (mold with high aspect ratio pattern) Sectional view showing stress concentration in the resist when releasing imprint

Explanation of symbols

100 Mold 101 Silicon substrate 102 Silicon oxide film 111 Silicon substrate 112 Resist 120 Quartz mold 130 Mold 132 Resin (resist)
131 Silicon Substrate 140 Mold 141 Substrate 142 Resin 150 Mold 152 Resin 154 Stress Concentration Location 160 Mold 161 Substrate 162 Resist 200 Si Mold 201 Silicon Substrate 202 PMMA

Claims (17)

An imprint mold having a concavo-convex pattern formed on a substrate, wherein the concavo-convex pattern having a different depth, width or shape is formed. An imprint mold having a concavo-convex pattern formed on a substrate, wherein concavo-convex patterns having different depths are formed on the substrate,
The imprint mold characterized in that the depth of the concavo-convex pattern increases stepwise in a predetermined axial direction on the substrate. An imprint mold having a concavo-convex pattern formed on a substrate, wherein concavo-convex patterns having different widths are formed on the substrate,
The imprint mold characterized in that the width of the concavo-convex pattern is gradually reduced in a predetermined axial direction on the substrate. An imprint mold having a concavo-convex pattern formed on a substrate, wherein a plurality of concavo-convex patterns are formed on the substrate,
An imprint mold, wherein uneven patterns having different shapes are arranged in parallel in a predetermined axial direction on the substrate. An imprint mold having a concavo-convex pattern formed on a substrate,
A predetermined axial direction on the substrate is an X axis,
The axis perpendicular to the X axis is the Y axis,
Change one parameter selected from the group consisting of the depth, line width, and shape of the concavo-convex pattern in the X-axis direction,
Change one other parameter selected from the group consisting of the depth, line width, and shape of the concavo-convex pattern in the Y-axis direction,
An imprint mold, wherein uneven patterns are arranged in an XY matrix. An imprint evaluation apparatus using the imprint mold according to claim 1. The imprint mold according to claim 1 is pressed against a substrate on which a resist is formed to form a resist,
Curing the molded resist,
A method of forming a resist pattern, comprising releasing the imprint mold from the cured resist. In the resist pattern formation method of Claim 7,
The method for forming a resist pattern, wherein the imprint mold is washed before the press contact. Forming a resist on the substrate,
Forming a plurality of concave-convex patterns with different depths in the resist;
A method of manufacturing an imprint mold, wherein a dry etching process is performed from a surface of the resist on which the plurality of uneven patterns are formed toward a substrate. 10. The imprint mold manufacturing method according to claim 9, wherein the formation of the plurality of uneven patterns with different depths is performed by changing a dose amount in electron beam drawing. 10. Production method. 10. The imprint mold manufacturing method according to claim 9, wherein the formation of the plurality of uneven patterns with different depths is performed by changing an acceleration voltage in electron beam drawing. 10. Production method. 10. The imprint mold manufacturing method according to claim 9, wherein the formation of the plurality of uneven patterns having different depths is performed by changing a dose amount in ion beam drawing. 10. Production method. 10. The imprint mold manufacturing method according to claim 9, wherein the formation of the plurality of uneven patterns having different depths is performed by changing an acceleration voltage in ion beam drawing. 10. Production method. The imprint mold manufacturing method according to claim 9, wherein the formation of the plurality of uneven patterns with different depths is performed by changing an exposure amount in laser drawing. Method. Prepare the board
A method of manufacturing an imprint mold, wherein the substrate surface is irradiated with a focused ion beam to form a plurality of concave and convex patterns having different depths. 16. The method of manufacturing an imprint mold according to claim 15, wherein the formation of the plurality of concave and convex patterns having different depths is performed by changing a dose amount of an ion beam. Method. The imprint mold manufacturing method according to claim 15, wherein the substrate surface is scratched by an AFM probe.

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