JP2014138066A5 - - Google Patents

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JP2014138066A5
JP2014138066A5 JP2013005601A JP2013005601A JP2014138066A5 JP 2014138066 A5 JP2014138066 A5 JP 2014138066A5 JP 2013005601 A JP2013005601 A JP 2013005601A JP 2013005601 A JP2013005601 A JP 2013005601A JP 2014138066 A5 JP2014138066 A5 JP 2014138066A5
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color filter
light receiving
imaging device
solid
state imaging
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JP2013005601A
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JP2014138066A (en
JP6161295B2 (en
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Priority to JP2013005601A priority Critical patent/JP6161295B2/en
Priority claimed from JP2013005601A external-priority patent/JP6161295B2/en
Priority to US14/154,883 priority patent/US9252183B2/en
Priority to CN201410020040.2A priority patent/CN103928480B/en
Publication of JP2014138066A publication Critical patent/JP2014138066A/en
Priority to US14/983,062 priority patent/US9806124B2/en
Publication of JP2014138066A5 publication Critical patent/JP2014138066A5/ja
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Description

本発明の固体撮像装置の製造方法は、半導体基板の上面に複数の受光部が設けられた固体撮像装置の製造方法であって、前記半導体基板の上方に、前記複数の受光部における各受光部に対応し、互いに接する複数のカラーフィルタ層を形成する工程と、前記複数のカラーフィルタ層の上方に、前記各カラーフィルタ層の境界部分の上方領域に開口を有するフォトレジストを形成する工程と、前記フォトレジストの前記開口の側面に、前記各カラーフィルタ層の境界部分の上方領域を覆わないサイドウォールを形成する工程と、少なくとも前記サイドウォールをマスクとしたエッチングにより、前記各カラーフィルタ層の境界部分を除去し、前記複数の各カラーフィルタ層の間に中空部を形成する工程とを含む。
本発明の固体撮像装置は、半導体基板の上面に複数の受光部が設けられた固体撮像装置であって、前記半導体基板の上方に形成され、前記複数の受光部における各受光部に対応した複数のカラーフィルタ層と、前記複数のカラーフィルタ層における各カラーフィルタ層の上方に形成されたフォトレジストと、前記フォトレジストの側面に、一方側の端が接して形成されたサイドウォールとを含み、前記各カラーフィルタ層の間には中空部が形成されており、前記中空部は、前記サイドウォールにおける前記一方側の端と反対の他方側の端に整合して形成されている。 The method for manufacturing a solid-state imaging device according to the present invention is a method for manufacturing a solid-state imaging device in which a plurality of light receiving units are provided on an upper surface of a semiconductor substrate, and each light receiving unit in the plurality of light receiving units is provided above the semiconductor substrate. A step of forming a plurality of color filter layers in contact with each other , and a step of forming a photoresist having an opening in a region above the boundary portion of each color filter layer above the plurality of color filter layers ; The step of forming a sidewall on the side surface of the opening of the photoresist that does not cover the upper region of the boundary portion of each color filter layer, and at least the boundary of each color filter layer by etching using the sidewall as a mask Removing a portion and forming a hollow portion between each of the plurality of color filter layers.
The solid-state imaging device of the present invention is a solid-state imaging device in which a plurality of light receiving portions are provided on the upper surface of a semiconductor substrate, and is formed above the semiconductor substrate, and a plurality of light receiving portions corresponding to each light receiving portion in the plurality of light receiving portions. A color filter layer, a photoresist formed above each color filter layer in the plurality of color filter layers, and a side wall formed on one side of the photoresist in contact with an end thereof, A hollow portion is formed between the color filter layers, and the hollow portion is formed in alignment with the other end opposite to the one end of the sidewall.

Claims (10)

半導体基板の上面に複数の受光部が設けられた固体撮像装置の製造方法であって、
前記半導体基板の上方に、前記複数の受光部における各受光部に対応し、互いに接する複数のカラーフィルタ層を形成する工程と、
前記複数のカラーフィルタ層の上方に、前記各カラーフィルタ層の境界部分の上方領域に開口を有するフォトレジストを形成する工程と、
前記フォトレジストの前記開口の側面に、前記各カラーフィルタ層の境界部分の上方領域を覆わないサイドウォールを形成する工程と、
少なくとも前記サイドウォールをマスクとしたエッチングにより、前記各カラーフィルタ層の境界部分を除去し、前記複数の各カラーフィルタ層の間に中空部を形成する工程と
を含むことを特徴とする固体撮像装置の製造方法。 A method of manufacturing a solid-state imaging device in which a plurality of light receiving units are provided on an upper surface of a semiconductor substrate,
Forming a plurality of color filter layers in contact with each other above the semiconductor substrate, corresponding to the light receiving portions in the plurality of light receiving portions;
Forming a photoresist having an opening in a region above the boundary portion of each color filter layer above the plurality of color filter layers ;
Forming a sidewall on the side surface of the opening of the photoresist that does not cover the upper region of the boundary portion of the color filter layers;
A step of removing a boundary portion of each color filter layer by etching using at least the side wall as a mask, and forming a hollow portion between each of the plurality of color filter layers. Manufacturing method. 前記中空部の上部を封止する封止層を形成する工程を更に含むことを特徴とする請求項１に記載の固体撮像装置の製造方法。 The method for manufacturing a solid-state imaging device according to claim 1, further comprising a step of forming a sealing layer that seals an upper portion of the hollow portion. 前記フォトレジストは、２００℃以上の耐熱材料からなるものであることを特徴とする請求項１または２に記載の固体撮像装置の製造方法。   The method for manufacturing a solid-state imaging device according to claim 1, wherein the photoresist is made of a heat resistant material of 200 ° C. or higher. 前記フォトレジストは、波長が４００ｎｍ〜７００ｎｍの光の透過率が８０％以上の材料からなるものであることを特徴とする請求項１乃至３のいずれか１項に記載の固体撮像装置の製造方法。   4. The method of manufacturing a solid-state imaging device according to claim 1, wherein the photoresist is made of a material having a light transmittance of 80% or more at a wavelength of 400 nm to 700 nm. 5. . 前記サイドウォールを形成する工程では、前記フォトレジストの上面および側面を含む全面に、酸化膜層を成膜し、その後、前記酸化膜層に対して異方性ドライエッチング法を用いてエッチバックし、前記酸化膜層を前記フォトレジストの側面に残して、前記酸化膜層からなる前記サイドウォールを形成することを特徴とする請求項１乃至４のいずれか１項に記載の固体撮像装置の製造方法。   In the step of forming the sidewall, an oxide film layer is formed on the entire surface including the upper surface and side surfaces of the photoresist, and then the oxide film layer is etched back by using an anisotropic dry etching method. 5. The manufacturing of the solid-state imaging device according to claim 1, wherein the sidewall made of the oxide film layer is formed while leaving the oxide film layer on a side surface of the photoresist. 6. Method. 前記酸化膜層を、前記フォトレジストの上面にも残すことを特徴とする請求項５に記載の固体撮像装置の製造方法。   6. The method of manufacturing a solid-state imaging device according to claim 5, wherein the oxide film layer is also left on the upper surface of the photoresist. 前記中空部を形成する際のエッチングに用いるガスは、Ｏ2とＣＯとＮ2であり、
前記酸化膜層をエッチバックする際に用いるガスは、ＣＦ4とＡｒであることを特徴とする請求項５または６に記載の固体撮像装置の製造方法。 Gases used for etching when forming the hollow portion are O 2 , CO, and N 2 ,
7. The method of manufacturing a solid-state imaging device according to claim 5, wherein gases used for etching back the oxide film layer are CF 4 and Ar. 8. 前記複数のカラーフィルタ層における各カラーフィルタ層の上方に、前記複数の受光部における各受光部に対応したマイクロレンズを形成する工程を更に含むことを特徴とする請求項１乃至７のいずれか１項に記載の固体撮像装置の製造方法。   8. The method according to claim 1, further comprising forming a microlens corresponding to each light receiving portion in the plurality of light receiving portions above each color filter layer in the plurality of color filter layers. The manufacturing method of the solid-state imaging device of description. 前記半導体基板と前記複数のカラーフィルタ層との間に、前記複数の受光部における各受光部に対応した導波路を形成する工程を更に含むことを特徴とする請求項１乃至８のいずれか１項に記載の固体撮像装置の製造方法。   9. The method according to claim 1, further comprising a step of forming a waveguide corresponding to each light receiving portion in the plurality of light receiving portions between the semiconductor substrate and the plurality of color filter layers. The manufacturing method of the solid-state imaging device of description. 半導体基板の上面に複数の受光部が設けられた固体撮像装置であって、
前記半導体基板の上方に形成され、前記複数の受光部における各受光部に対応した複数のカラーフィルタ層と、
前記複数のカラーフィルタ層における各カラーフィルタ層の上方に形成されたフォトレジストと、
前記フォトレジストの側面に、一方側の端が接して形成されたサイドウォールと
を含み、
前記各カラーフィルタ層の間には中空部が形成されており、
前記中空部は、前記サイドウォールにおける前記一方側の端と反対の他方側の端に整合して形成されていることを特徴とする固体撮像装置。 A solid-state imaging device provided with a plurality of light receiving portions on an upper surface of a semiconductor substrate,
A plurality of color filter layers formed above the semiconductor substrate and corresponding to the light receiving portions in the plurality of light receiving portions;
A photoresist formed above each color filter layer in the plurality of color filter layers;
A sidewall formed on one side of the side surface of the photoresist in contact with the side;
A hollow portion is formed between each color filter layer,
The hollow portion is formed in alignment with the other end opposite to the one end of the sidewall.
JP2013005601A 2013-01-16 2013-01-16 Solid-state imaging device and manufacturing method thereof Expired - Fee Related JP6161295B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013005601A JP6161295B2 (en) 2013-01-16 2013-01-16 Solid-state imaging device and manufacturing method thereof
US14/154,883 US9252183B2 (en) 2013-01-16 2014-01-14 Solid state image pickup apparatus and method for manufacturing the same
CN201410020040.2A CN103928480B (en) 2013-01-16 2014-01-16 Solid-state image pickup apparatus and its manufacture method
US14/983,062 US9806124B2 (en) 2013-01-16 2015-12-29 Solid state image pickup apparatus and method for manufacturing the same

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Application Number Priority Date Filing Date Title
JP2013005601A JP6161295B2 (en) 2013-01-16 2013-01-16 Solid-state imaging device and manufacturing method thereof

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JP2014138066A JP2014138066A (en) 2014-07-28
JP2014138066A5 true JP2014138066A5 (en) 2016-02-18
JP6161295B2 JP6161295B2 (en) 2017-07-12

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JP2018186240A (en) * 2017-04-27 2018-11-22 株式会社東芝 Manufacturing method of semiconductor device

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US4707218A (en) * 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
US5143855A (en) * 1991-06-17 1992-09-01 Eastman Kodak Company Method for making contact openings in color image sensor passivation layer
JP3560990B2 (en) * 1993-06-30 2004-09-02 株式会社東芝 Solid-state imaging device
JP2006351775A (en) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp Method of manufacturing color filter, method of manufacturing solid-state imaging device and the solid-state imaging device employing the filter
JP4971616B2 (en) * 2005-09-27 2012-07-11 キヤノン株式会社 Imaging device
JP4550126B2 (en) * 2008-04-25 2010-09-22 東京エレクトロン株式会社 Etching mask forming method, etching method, and semiconductor device manufacturing method
JP2010085756A (en) * 2008-09-30 2010-04-15 Fujifilm Corp Method of manufacturing color filter, and solid-state imaging device
JP4741015B2 (en) * 2009-03-27 2011-08-03 富士フイルム株式会社 Image sensor
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