JP2014136793A - Method for producing aqueous dispersion of micelles of nitrogen-containing dendrimer compound - Google Patents
Method for producing aqueous dispersion of micelles of nitrogen-containing dendrimer compound Download PDFInfo
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- JP2014136793A JP2014136793A JP2013007898A JP2013007898A JP2014136793A JP 2014136793 A JP2014136793 A JP 2014136793A JP 2013007898 A JP2013007898 A JP 2013007898A JP 2013007898 A JP2013007898 A JP 2013007898A JP 2014136793 A JP2014136793 A JP 2014136793A
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- nitrogen
- dendrimer compound
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- organic solvent
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- 239000000412 dendrimer Substances 0.000 title claims abstract description 130
- 229920000736 dendritic polymer Polymers 0.000 title claims abstract description 130
- 150000001875 compounds Chemical class 0.000 title claims abstract description 115
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 239000006185 dispersion Substances 0.000 title claims abstract description 36
- 239000000693 micelle Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000003960 organic solvent Substances 0.000 claims abstract description 83
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000012062 aqueous buffer Substances 0.000 claims abstract description 25
- 239000004094 surface-active agent Substances 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 125000001424 substituent group Chemical group 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 125000005843 halogen group Chemical group 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 125000001624 naphthyl group Chemical group 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 46
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 32
- 239000011259 mixed solution Substances 0.000 description 16
- -1 biphenyloxy group Chemical group 0.000 description 12
- 239000000872 buffer Substances 0.000 description 11
- 238000009835 boiling Methods 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 239000006172 buffering agent Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 230000007928 solubilization Effects 0.000 description 4
- 238000005063 solubilization Methods 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 230000003381 solubilizing effect Effects 0.000 description 3
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 3
- FHBXQJDYHHJCIF-UHFFFAOYSA-N (2,3-diaminophenyl)-phenylmethanone Chemical compound NC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1N FHBXQJDYHHJCIF-UHFFFAOYSA-N 0.000 description 2
- QZTKDVCDBIDYMD-UHFFFAOYSA-N 2,2'-[(2-amino-2-oxoethyl)imino]diacetic acid Chemical compound NC(=O)CN(CC(O)=O)CC(O)=O QZTKDVCDBIDYMD-UHFFFAOYSA-N 0.000 description 2
- IHPYMWDTONKSCO-UHFFFAOYSA-N 2,2'-piperazine-1,4-diylbisethanesulfonic acid Chemical compound OS(=O)(=O)CCN1CCN(CCS(O)(=O)=O)CC1 IHPYMWDTONKSCO-UHFFFAOYSA-N 0.000 description 2
- JKMHFZQWWAIEOD-UHFFFAOYSA-N 2-[4-(2-hydroxyethyl)piperazin-1-yl]ethanesulfonic acid Chemical compound OCC[NH+]1CCN(CCS([O-])(=O)=O)CC1 JKMHFZQWWAIEOD-UHFFFAOYSA-N 0.000 description 2
- AJTVSSFTXWNIRG-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanesulfonic acid Chemical compound OCC[NH+](CCO)CCS([O-])(=O)=O AJTVSSFTXWNIRG-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 239000007991 ACES buffer Substances 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DBXNUXBLKRLWFA-UHFFFAOYSA-N N-(2-acetamido)-2-aminoethanesulfonic acid Chemical compound NC(=O)CNCCS(O)(=O)=O DBXNUXBLKRLWFA-UHFFFAOYSA-N 0.000 description 2
- SEQKRHFRPICQDD-UHFFFAOYSA-N N-tris(hydroxymethyl)methylglycine Chemical compound OCC(CO)(CO)[NH2+]CC([O-])=O SEQKRHFRPICQDD-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000008346 aqueous phase Substances 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical class [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 239000008363 phosphate buffer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 125000006656 (C2-C4) alkenyl group Chemical group 0.000 description 1
- 125000006650 (C2-C4) alkynyl group Chemical group 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- HALGLMAADGHVSV-UHFFFAOYSA-N 1-aminopropane-2-sulfonic acid Chemical compound NCC(C)S(O)(=O)=O HALGLMAADGHVSV-UHFFFAOYSA-N 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
- 125000000530 1-propynyl group Chemical group [H]C([H])([H])C#C* 0.000 description 1
- VQOHOZOFRKPOJI-UHFFFAOYSA-N 2-(2-acetylhydrazinyl)acetic acid Chemical compound CC(=O)NNCC(O)=O VQOHOZOFRKPOJI-UHFFFAOYSA-N 0.000 description 1
- SXGZJKUKBWWHRA-UHFFFAOYSA-N 2-(N-morpholiniumyl)ethanesulfonate Chemical compound [O-]S(=O)(=O)CC[NH+]1CCOCC1 SXGZJKUKBWWHRA-UHFFFAOYSA-N 0.000 description 1
- VSZWLDAGOXQHNB-UHFFFAOYSA-M 2-aminoethyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CCN VSZWLDAGOXQHNB-UHFFFAOYSA-M 0.000 description 1
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 239000007995 HEPES buffer Substances 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 1
- 239000007990 PIPES buffer Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UZMAPBJVXOGOFT-UHFFFAOYSA-N Syringetin Natural products COC1=C(O)C(OC)=CC(C2=C(C(=O)C3=C(O)C=C(O)C=C3O2)O)=C1 UZMAPBJVXOGOFT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007997 Tricine buffer Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000007998 bicine buffer Substances 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- KCFYHBSOLOXZIF-UHFFFAOYSA-N dihydrochrysin Natural products COC1=C(O)C(OC)=CC(C2OC3=CC(O)=CC(O)=C3C(=O)C2)=C1 KCFYHBSOLOXZIF-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BEBCJVAWIBVWNZ-UHFFFAOYSA-N glycinamide Chemical compound NCC(N)=O BEBCJVAWIBVWNZ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000003884 phenylalkyl group Chemical group 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 150000004032 porphyrins Chemical group 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
本発明は、含窒素デンドリマー化合物のミセルの水性分散液の製造方法に関する。 The present invention relates to a method for producing an aqueous dispersion of micelles of a nitrogen-containing dendrimer compound.
デンドリマー化合物は樹状構造を持つ大型の化合物であり、その設計に応じて種々の特性を持った化合物が得られることが知られている。デンドリマー化合物の中でも、アゾメチン基のような含窒素基を含む含窒素デンドリマー化合物は、窒素原子に金属を配位させて、金属や金属化合物を、分子の内部に取り込むことが可能であるため、触媒材料、電子材料、発光材料等への応用が期待されている。 Dendrimer compounds are large compounds having a dendritic structure, and it is known that compounds having various characteristics can be obtained according to the design. Among dendrimer compounds, nitrogen-containing dendrimer compounds containing a nitrogen-containing group such as an azomethine group can coordinate the metal to the nitrogen atom and incorporate the metal or metal compound into the molecule, so the catalyst Applications to materials, electronic materials, luminescent materials, etc. are expected.
このように、含窒素デンドリマー化合物は、種々の用途へ応用が期待されているが、含窒素デンドリマー化合物は疎水性化合物であるため、その利用範囲は、非水系用途に限られている。このため、含窒素デンドリマー化合物を水に対して可溶化する方法について検討されている。 As described above, the nitrogen-containing dendrimer compound is expected to be applied to various uses. However, since the nitrogen-containing dendrimer compound is a hydrophobic compound, its range of use is limited to non-aqueous uses. For this reason, the method of solubilizing a nitrogen-containing dendrimer compound with respect to water is examined.
含窒素デンドリマー化合物を水に対して可溶化する方法としては、例えば、ポルフィリン骨格を有する含窒素デンドリマー化合物を、界面活性剤とともにクロロホルムのような疎水性有機溶媒に溶解させた後、含窒素デンドリマー化合物の有機溶媒溶液と、水性緩衝液とを混合し、次いで、有機溶媒溶液と水性緩衝液との混合液から有機溶媒を除去する方法が知られている(特許文献1)。 As a method for solubilizing a nitrogen-containing dendrimer compound in water, for example, a nitrogen-containing dendrimer compound having a porphyrin skeleton is dissolved in a hydrophobic organic solvent such as chloroform together with a surfactant, and then a nitrogen-containing dendrimer compound There is known a method of mixing an organic solvent solution and an aqueous buffer solution, and then removing the organic solvent from the mixed solution of the organic solvent solution and the aqueous buffer solution (Patent Document 1).
一般に含窒素デンドリマー化合物は、複雑な合成工程を経て得られる高価な化合物である。このため、できるだけ効率よく含窒素デンドリマー化合物を使用するため、含窒素デンドリマー化合物の水に対する可溶化は、高効率であることが求められる。しかし、特許文献1の実施例に記載の方法では、含窒素デンドリマー化合物の水に対する可溶化率は高くても60%に過ぎず、多量の含窒素デンドリマー化合物が利用されていない。 In general, a nitrogen-containing dendrimer compound is an expensive compound obtained through a complicated synthesis process. For this reason, in order to use a nitrogen-containing dendrimer compound as efficiently as possible, solubilization of the nitrogen-containing dendrimer compound in water is required to be highly efficient. However, in the method described in the Examples of Patent Document 1, the solubilization rate of the nitrogen-containing dendrimer compound in water is only 60% at most, and a large amount of the nitrogen-containing dendrimer compound is not used.
本発明は、上記の課題を鑑みてなされたものであり、含窒素デンドリマー化合物を、高効率で水に対して可溶化させることができる、含窒素デンドリマー化合物のミセルの水性分散液の製造方法を提供することを目的とする。 The present invention has been made in view of the above problems, and provides a method for producing an aqueous dispersion of micelles of a nitrogen-containing dendrimer compound, which can solubilize the nitrogen-containing dendrimer compound with high efficiency in water. The purpose is to provide.
本発明者らは、含窒素デンドリマー化合物を水と混和性が低い溶媒に溶解させて得られる含窒素デンドリマー化合物の有機溶媒溶液と、所定の濃度の界面活性剤を含有する水性緩衝液とを混合した後に、得られる混合液から有機溶媒を除去することによって、含窒素デンドリマー化合物が水に対して高効率で可溶化された、含窒素デンドリマー化合物のミセルの水性分散液を製造できることを見出し、本発明を完成するに至った。 The inventors mixed an organic solvent solution of a nitrogen-containing dendrimer compound obtained by dissolving a nitrogen-containing dendrimer compound in a solvent having low miscibility with water, and an aqueous buffer containing a surfactant at a predetermined concentration. After that, by removing the organic solvent from the resulting mixture, it was found that a nitrogen-containing dendrimer compound micelle aqueous dispersion in which the nitrogen-containing dendrimer compound was solubilized with high efficiency in water could be produced. The invention has been completed.
本発明の態様は、金属元素が配位することのできる窒素原子を少なくとも1つ有する含窒素デンドリマー化合物を、水と混和性が低い溶媒に溶解させて含窒素デンドリマー化合物の有機溶媒溶液を調製するデンドリマー溶液調製工程と、
前記有機溶媒溶液と、5.0×10−4〜2.0×10−2mol/Lの濃度の界面活性剤を含有する水性緩衝液とを混合する混合工程と、
前記有機溶媒溶液と前記水性緩衝液との混合液から有機溶媒を除去する有機溶媒除去工程とを含む、含窒素デンドリマー化合物のミセルの水性分散液の製造方法である。
In an embodiment of the present invention, an organic solvent solution of a nitrogen-containing dendrimer compound is prepared by dissolving a nitrogen-containing dendrimer compound having at least one nitrogen atom to which a metal element can coordinate in a solvent having low miscibility with water. A dendrimer solution preparation step;
A mixing step of mixing the organic solvent solution and an aqueous buffer containing a surfactant having a concentration of 5.0 × 10 −4 to 2.0 × 10 −2 mol / L;
It is a manufacturing method of the aqueous dispersion of the micelle of a nitrogen-containing dendrimer compound including the organic-solvent removal process which removes an organic solvent from the liquid mixture of the said organic-solvent solution and the said aqueous buffer.
本発明によれば、含窒素デンドリマー化合物を、高効率で水に対して可溶化させることができる、含窒素デンドリマー化合物のミセルの水性分散液の製造方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the aqueous dispersion of the micelle of a nitrogen-containing dendrimer compound which can solubilize a nitrogen-containing dendrimer compound with respect to water can be provided.
≪含窒素デンドリマー化合物のミセルの水性分散液の製造方法≫
本発明の、含窒素デンドリマー化合物のミセルの水性分散液の製造方法は、デンドリマー溶液調製工程と、混合工程と、有機溶媒除去工程とを含む。以下、デンドリマー溶液調製工程、混合工程、及び有機溶媒除去工程について順に説明する。
≪Method for producing aqueous dispersion of micelle of nitrogen-containing dendrimer compound≫
The method for producing an aqueous dispersion of micelles of a nitrogen-containing dendrimer compound according to the present invention includes a dendrimer solution preparation step, a mixing step, and an organic solvent removal step. Hereinafter, the dendrimer solution preparation step, the mixing step, and the organic solvent removal step will be described in order.
<デンドリマー溶液調製工程>
デンドリマー溶液調製工程では、金属元素が配位することのできる窒素原子を少なくとも1つ有する含窒素デンドリマー化合物を、水と混和性が低い溶媒に溶解させて、含窒素デンドリマー化合物の有機溶媒溶液を調製する。以下、含窒素デンドリマー化合物、有機溶媒、及び含窒素デンドリマー化合物の有機溶媒溶液の調製方法について順に説明する。
<Dendrimer solution preparation process>
In the dendrimer solution preparation step, an organic solvent solution of a nitrogen-containing dendrimer compound is prepared by dissolving a nitrogen-containing dendrimer compound having at least one nitrogen atom to which a metal element can coordinate in a solvent having low miscibility with water. To do. Hereinafter, a method for preparing a nitrogen-containing dendrimer compound, an organic solvent, and an organic solvent solution of the nitrogen-containing dendrimer compound will be described in order.
〔含窒素デンドリマー化合物〕
含窒素デンドリマー化合物は、金属元素が配位することのできる窒素原子を少なくとも1つ有するものであれば特に限定されない。金属元素が配位することのできる窒素原子としては、アゾメチン結合(−CH=N−)中の窒素原子が挙げられる。アゾメチン結合を含む含窒素デンドリマー化合物の好適な例としては、下記一般式(1)で表されるフェニルアゾメチンデンドリマー化合物が挙げられる。
[Nitrogen-containing dendrimer compound]
The nitrogen-containing dendrimer compound is not particularly limited as long as it has at least one nitrogen atom to which a metal element can coordinate. Examples of the nitrogen atom to which the metal element can coordinate include a nitrogen atom in an azomethine bond (—CH═N—). Preferable examples of the nitrogen-containing dendrimer compound containing an azomethine bond include a phenylazomethine dendrimer compound represented by the following general formula (1).
上記一般式(1)中のAは、フェニルアゾメチンデンドリマーの中核分子基であり、フェニルアゾメチンデンドリマー分子は、この中核分子基を中心として、外側に向かって上記一般式(1)中のBで表される単位の連鎖を成長させる。その結果、成長後のフェニルアゾメチンデンドリマー分子は、上記Aを中心として、上記Bが連鎖して放射状に成長した構造を有する。Bが連鎖する回数を「世代」と呼び、中核分子基Aに隣接する世代を第1世代として、外側に向かって世代数が増加していく。上記一般式(1)中のAは、次式
上記一般式(1)中のBは、上記Aに対して1個のアゾメチン結合を形成させる次式
上記一般式(1)中のRは、末端基として上記Bにアゾメチン結合を形成する次式
上記一般式(1)において、nは、フェニルアゾメチンデンドリマーの上記Bの構造を介しての世代数を表し、mは、フェニルアゾメチンデンドリマーの末端基Rの数を表し、n=0のときはm=pであり、n≧1のときはm=2npである。 In the general formula (1), n represents the number of generations of the phenylazomethine dendrimer through the structure B, m represents the number of terminal groups R of the phenylazomethine dendrimer, and when n = 0, m represents m. = P, and when n ≧ 1, m = 2 n p.
置換基を有してもよい芳香族基であるR1、R2及びR3は、それぞれ独立に、その骨格構造として、フェニル基又はその類縁の構造であってよく、例えば、フェニル基、ビフェニル基、ビフェニルアルキレン基、ビフェニルオキシ基、ビフェニルカルボニル基、フェニルアルキル基等の各種のものが挙げられる。これらの骨格は、置換基として、塩素原子、臭素原子、フッ素原子等のハロゲン原子、メチル基、エチル基等のアルキル基、クロロメチル基、トリフルオロメチル基等のハロアルキル基、メトキシ基、エトキシ基等のアルコキシ基、メトキシエチル基等のアルコキシアルキル基、アルキルチオ基、カルボニル基、シアノ基、アミノ基、ニトロ基等の各種の置換基が例示される。上記骨格は、これらの置換基を、任意に1又は複数有することができる。 R 1 , R 2 and R 3 which are aromatic groups which may have a substituent each independently may be a phenyl group or a similar structure as the skeleton structure, for example, a phenyl group, biphenyl And various groups such as a group, a biphenylalkylene group, a biphenyloxy group, a biphenylcarbonyl group, and a phenylalkyl group. These skeletons are substituted with halogen atoms such as chlorine atom, bromine atom and fluorine atom, alkyl groups such as methyl group and ethyl group, haloalkyl groups such as chloromethyl group and trifluoromethyl group, methoxy group and ethoxy group. And various substituents such as alkoxyalkyl groups such as methoxyethyl groups, alkylthio groups, carbonyl groups, cyano groups, amino groups, and nitro groups. The skeleton can optionally have one or more of these substituents.
上記置換基の中でも、メトキシ基、アミノ基のような電子供与性の高い置換基、又はシアノ基、カルボニル基のような電子受容性の高い置換基が好ましい。 Among the above substituents, substituents having high electron donating properties such as methoxy group and amino group, or substituents having high electron accepting properties such as cyano group and carbonyl group are preferable.
上記式R1(−N=)pで表される中核部分において、pとしては、特に限定されないが、例えば1〜4の整数が挙げられる。また、フェニルアゾメチンデンドリマーの世代数nは、0又は1以上の整数であるが、例えば2〜6であることが好ましく例示される。 In the core part represented by the above formula R 1 (—N =) p , p is not particularly limited, and examples thereof include integers of 1 to 4. The generation number n of the phenylazomethine dendrimer is 0 or an integer of 1 or more, preferably 2 to 6, for example.
このようなフェニルアゾメチンデンドリマー化合物の一形態として、下記式で表される化合物を挙げることができる。下記式で表される化合物は、世代数が4のフェニルアゾメチンデンドリマー化合物である。
上記式で表されるフェニルアゾメチンデンドリマー化合物と、金属塩とが混合されると、金属元素が、フェニルアゾメチンデンドリマー化合物の窒素元素に配位し、フェニルアゾメチンデンドリマー化合物の内部に取り込まれる。このとき、金属元素は、フェニルアゾメチンデンドリマー化合物の中心部側の窒素原子に優先的に配位するので、中心部側に存在する窒素原子から外側に存在する窒素原子の順に配位する。そのため、フェニルアゾメチンデンドリマー化合物と金属元素とのモル比を制御することにより、フェニルアゾメチンデンドリマー化合物の所望の位置に金属元素を配置できる。 When the phenylazomethine dendrimer compound represented by the above formula is mixed with a metal salt, the metal element coordinates to the nitrogen element of the phenylazomethine dendrimer compound and is taken into the phenylazomethine dendrimer compound. At this time, the metal element is coordinated preferentially to the nitrogen atom on the central portion side of the phenylazomethine dendrimer compound, and therefore coordinated in the order of the nitrogen atom existing on the central portion side to the nitrogen atom existing on the outside. Therefore, the metal element can be arranged at a desired position of the phenylazomethine dendrimer compound by controlling the molar ratio of the phenylazomethine dendrimer compound and the metal element.
例えば、上記式で表されるフェニルアゾメチンデンドリマー化合物に、金属元素を2等量添加した例と、金属元素を6等量添加した例を下記式で表す。なお、下記式では、フェニルアゾメチンデンドリマー化合物に配位した金属元素を黒丸で示した。 For example, an example in which 2 equivalents of a metal element are added to a phenylazomethine dendrimer compound represented by the above formula and an example in which 6 equivalents of a metal element are added are represented by the following formulas. In the following formula, the metal element coordinated with the phenylazomethine dendrimer compound is indicated by a black circle.
上記のように、フェニルアゾメチンデンドリマー化合物において金属元素が配位することのできる箇所は特定の箇所に限定されるので、フェニルアゾメチンデンドリマー化合物に配位した金属元素は、ナノレベルとなる所定のピッチで配置されることになる。このため、金属元素を配位させたフェニルアゾメチンデンドリマー化合物を触媒として使用することにより、触媒活性を有する金属元素が、凝集することなく高効率で利用されることが期待される。また、フェニルアゾメチンデンドリマー化合物の世代数を増減させることにより、1つのフェニルアゾメチンデンドリマー化合物に配位させることのできる金属元素の上限数を任意に変化させることができる。 As described above, in the phenyl azomethine dendrimer compound, the place where the metal element can coordinate is limited to a specific place, so the metal element coordinated to the phenyl azomethine dendrimer compound has a nano-level predetermined pitch. Will be placed. For this reason, by using a phenylazomethine dendrimer compound coordinated with a metal element as a catalyst, it is expected that the metal element having catalytic activity is utilized with high efficiency without aggregation. Further, by increasing or decreasing the number of generations of the phenylazomethine dendrimer compound, the upper limit number of metal elements that can be coordinated to one phenylazomethine dendrimer compound can be arbitrarily changed.
上記のフェニルアゾメチンデンドリマーを合成するには、公知の方法を使用することができる。このような方法として、例えば、ベンゾフェノンとジアミノベンゾフェノンとを、クロロベンゼン溶媒中において、塩化チタン及び塩基の存在下で反応させ、さらに、順次ジアミノベンゾフェノンと反応させて世代数を増加させる方法が挙げられるが、特に限定されない。 A known method can be used to synthesize the above-mentioned phenylazomethine dendrimer. As such a method, for example, there is a method in which benzophenone and diaminobenzophenone are reacted in the presence of titanium chloride and a base in a chlorobenzene solvent and further reacted with diaminobenzophenone sequentially to increase the number of generations. There is no particular limitation.
含窒素デンドリマー化合物に配位させる金属元素は、特に限定されない。このような金属元素は、例えば、触媒としての使用のような、金属元素の使用目的に応じて適宜選択される。含窒素デンドリマー化合物に配位させる金属元素の典型例としては、チタン、バナジウム、鉄、コバルト、ニッケル、銅、亜鉛、ガリウム、ジルコニウム、ニオブ、モリブデン、ルテニウム、ロジウム、パラジウム、銀、インジウム、錫、アンチモン、ハフニウム、タンタル、タングステン、オスミウム、イリジウム、白金、金、及びビスマス等が挙げられる。 The metal element coordinated with the nitrogen-containing dendrimer compound is not particularly limited. Such a metal element is appropriately selected depending on the purpose of use of the metal element, such as use as a catalyst. Typical examples of the metal element coordinated to the nitrogen-containing dendrimer compound include titanium, vanadium, iron, cobalt, nickel, copper, zinc, gallium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, silver, indium, tin, Examples include antimony, hafnium, tantalum, tungsten, osmium, iridium, platinum, gold, and bismuth.
〔有機溶媒〕
含窒素デンドリマー化合物を溶解させる有機溶媒は、所望する量の含窒素デンドリマー化合物を溶解させることができ、水と混和性が低い溶媒であれば特に限定されない。水と混和性が低い溶媒は、水に全く溶解しないものには限定されず、水にある程度溶解するものであってもよい。水と混和性が低い溶媒が水にある程度溶解するものである場合、水と混和性が低い溶媒は、水と混和性が低い溶媒と水とを混合する場合に、水相と有機溶媒相とからなる2相系を形成できるものであればよい。水と混和性が低い溶媒は、20℃における水への溶解性が、1.0g/100mL以下であるのが好ましく、0.9g/100mL以下であるのがより好ましい。
[Organic solvent]
The organic solvent for dissolving the nitrogen-containing dendrimer compound is not particularly limited as long as it can dissolve a desired amount of the nitrogen-containing dendrimer compound and has a low miscibility with water. The solvent having low miscibility with water is not limited to a solvent that does not dissolve in water at all, and may be a solvent that dissolves in water to some extent. If a solvent that is poorly miscible with water is soluble in water to a certain degree, a solvent that is poorly miscible with water is an Any material can be used as long as it can form a two-phase system. The solvent having low miscibility with water has a solubility in water at 20 ° C. of preferably 1.0 g / 100 mL or less, and more preferably 0.9 g / 100 mL or less.
有機溶媒は、後述する有機溶媒除去工程で、加熱により、有機溶媒溶液と、水性緩衝液との混合液から、有機溶媒を除去しやすいことから、沸点が水より低いか、水と共沸する有機溶媒が好ましい。このような有機溶媒の中では、沸点が85℃以下の有機溶媒が好ましく、沸点が75℃以下の有機溶媒がより好ましい。また、有機溶媒の比重は、1.2以上が好ましく、1.4以上がより好ましい。なお、有機溶媒の比重は、水の密度を1とした場合のものである。このような沸点、及び比重の有機溶媒を用いることにより、後述する有機溶媒除去工程における有機溶媒の除去が容易となる。水と混和性の低い有機溶媒の具体例としては、クロロホルム、ジクロロエタン、及び四塩化炭素が挙げられ、クロロホルムが好ましい。 Since the organic solvent is easily removed from the mixed solution of the organic solvent solution and the aqueous buffer solution by heating in the organic solvent removing step described later, the boiling point is lower than water or azeotropes with water. Organic solvents are preferred. Among such organic solvents, an organic solvent having a boiling point of 85 ° C. or lower is preferable, and an organic solvent having a boiling point of 75 ° C. or lower is more preferable. Further, the specific gravity of the organic solvent is preferably 1.2 or more, more preferably 1.4 or more. The specific gravity of the organic solvent is that when the density of water is 1. By using an organic solvent having such a boiling point and specific gravity, it becomes easy to remove the organic solvent in the organic solvent removing step described later. Specific examples of the organic solvent having low miscibility with water include chloroform, dichloroethane, and carbon tetrachloride, with chloroform being preferred.
〔含窒素デンドリマー化合物の有機溶媒溶液の調製方法〕
含窒素デンドリマー化合物の有機溶媒溶液を調製する方法は、有機溶媒中に所定量の含窒素デンドリマー化合物を溶解させることができれば特に限定されない。通常、有機溶媒と、所定量の含窒素デンドリマー化合物とを混合した後に、撹拌して、含窒素デンドリマー化合物を有機溶媒中に溶解させて、含窒素デンドリマー化合物の有機溶媒溶液が得られる。含窒素デンドリマー化合物を有機溶媒に溶解させる際には、必要に応じて、有機溶媒を加熱してもよい。また、含窒素デンドリマーの溶解残分や、不溶性の不純物を除去する目的で、含窒素デンドリマー化合物の有機溶媒溶液を、所望の開口径のフィルターでろ過してもよい。
[Method for preparing organic solvent solution of nitrogen-containing dendrimer compound]
The method for preparing the organic solvent solution of the nitrogen-containing dendrimer compound is not particularly limited as long as a predetermined amount of the nitrogen-containing dendrimer compound can be dissolved in the organic solvent. Usually, an organic solvent and a predetermined amount of a nitrogen-containing dendrimer compound are mixed and then stirred to dissolve the nitrogen-containing dendrimer compound in the organic solvent, whereby an organic solvent solution of the nitrogen-containing dendrimer compound is obtained. When the nitrogen-containing dendrimer compound is dissolved in an organic solvent, the organic solvent may be heated as necessary. Further, for the purpose of removing dissolved residue of nitrogen-containing dendrimer and insoluble impurities, an organic solvent solution of the nitrogen-containing dendrimer compound may be filtered with a filter having a desired opening diameter.
含窒素デンドリマー化合物の有機溶媒溶液中の、含窒素デンドリマー化合物の含有量は、本発明の目的を阻害しない範囲で特に限定されないが、1〜20μmol/Lが好ましく、2.5〜10μmol/Lがより好ましく、5〜7.5μmol/Lが特に好ましい。 The content of the nitrogen-containing dendrimer compound in the organic solvent solution of the nitrogen-containing dendrimer compound is not particularly limited as long as the object of the present invention is not impaired, but is preferably 1 to 20 μmol / L, and preferably 2.5 to 10 μmol / L. More preferred is 5-7.5 μmol / L.
<混合工程>
混合工程では、デンドリマー溶液調製工程で得られる有機溶媒溶液と、5.0×10−4〜2.0×10−2mol/Lの濃度の界面活性剤を含有する水性緩衝液と、を混合する。デンドリマー溶液調製工程では、水と混和性が低い溶媒が使用されるため、混合工程で得られる、有機溶媒溶液と、水性緩衝液とを含む混合液は、有機溶媒相と水相とからなる2相系を形成する。
<Mixing process>
In the mixing step, the organic solvent solution obtained in the dendrimer solution preparation step is mixed with an aqueous buffer containing a surfactant having a concentration of 5.0 × 10 −4 to 2.0 × 10 −2 mol / L. To do. In the dendrimer solution preparation step, a solvent having low miscibility with water is used. Therefore, the mixture solution containing the organic solvent solution and the aqueous buffer solution obtained in the mixing step is composed of an organic solvent phase and an aqueous phase. Form a phase system.
有機溶媒溶液と水性緩衝液との混合比率は、所望する含窒素デンドリマー化合物のミセルの水性分散液を良好に形成できる限り特に限定されない。典型的には、有機溶媒溶液と水性緩衝液との混合比率は、体積比率(有機溶媒溶液/水性緩衝液)で、0.2/0.8〜0.8/0.2が好ましく、0.4/0.6〜0.6/0.4がより好ましい。以下、水性緩衝液に含まれる、界面活性剤と、緩衝剤とについて説明する。 The mixing ratio of the organic solvent solution and the aqueous buffer solution is not particularly limited as long as the desired aqueous dispersion of micelles of the nitrogen-containing dendrimer compound can be satisfactorily formed. Typically, the mixing ratio of the organic solvent solution and the aqueous buffer is preferably a volume ratio (organic solvent solution / aqueous buffer) of 0.2 / 0.8 to 0.8 / 0.2, 0 4 / 0.6 to 0.6 / 0.4 is more preferable. Hereinafter, the surfactant and the buffering agent contained in the aqueous buffer solution will be described.
〔界面活性剤〕
水性緩衝液に含まれる界面活性剤は、含窒素デンドリマー化合物のミセルの水性分散液を良好に形成できる限り特に限定されず、アニオン性界面活性剤、カチオン性界面活性剤、及びノニオン性界面活性剤の何れも使用することができる。界面活性剤の中では、カチオン性界面活性剤を用いるのが好ましい。
[Surfactant]
The surfactant contained in the aqueous buffer solution is not particularly limited as long as an aqueous dispersion of micelles of a nitrogen-containing dendrimer compound can be satisfactorily formed. Anionic surfactants, cationic surfactants, and nonionic surfactants Any of these can be used. Among the surfactants, it is preferable to use a cationic surfactant.
このような界面活性剤の中では、含窒素デンドリマー化合物を、高効率で含窒素デンドリマー化合物のミセルの水性分散液に取り込ませやすいことから、下記一般式(2)で表される化合物が好ましい。
Y−O−(CH2)q−Qr+・rX−・・・(2)
(一般式(2)中、Yは置換基を有してもよいフェニル基又は置換基を有してもよいナフチル基であり、qは10〜14の整数であり、rは1又は2であり、Qr+は、下記一般式(I):
Y-O- (CH 2) q -Q r + · rX - ··· (2)
(In General Formula (2), Y is a phenyl group which may have a substituent or a naphthyl group which may have a substituent, q is an integer of 10 to 14, and r is 1 or 2. Yes, Q r + is the following general formula (I):
上記一般式(2)で表される化合物は、例えば、下記一般式(III)
Y−OH・・・(III)
(一般式(III)中、Yは、一般式(2)と同意である。)
で表されるヒドロキシアリール化合物と、下記一般式(IV)
X−(CH2)q−X・・・(IV)
(一般式(IV)中、qは一般式(2)と同意であり、Xはハロゲン原子である。)
で表されるアルキルジハライドとを、塩基の存在下に反応させて、下記一般式(V)
Y−O−(CH2)q−X・・・(V)
(一般式(V)中、Y及びqは一般式(2)と同意であり、Xはハロゲン原子である。)
で表されるアリールオキシアルキルハライドを合成した後、一般式(V)で表されるアリールオキシアルキルハライドを、上記一般式(I)及び(II)で表される4級アミノ基を与える3級アミン化合物と反応させることにより製造することができる。
The compound represented by the general formula (2) is, for example, the following general formula (III)
Y-OH (III)
(In general formula (III), Y is the same as in general formula (2).)
A hydroxyaryl compound represented by the following general formula (IV):
X- (CH 2) q -X ··· (IV)
(In general formula (IV), q is the same as in general formula (2), and X is a halogen atom.)
Is reacted with an alkyl dihalide represented by the following general formula (V):
Y-O- (CH 2) q -X ··· (V)
(In general formula (V), Y and q are the same as those in general formula (2), and X is a halogen atom.)
After synthesizing the aryloxyalkyl halide represented by the formula (V), the aryloxyalkyl halide represented by the general formula (V) is converted into a tertiary amino group represented by the general formulas (I) and (II). It can be produced by reacting with an amine compound.
一般式(2)で表される化合物において、Yは置換基を有してもよいフェニル基、又は置換基を有してもよいナフチル基である。Yが有してもよい置換基としては、メチル基、エチル基、n−プロピル基、及びイソプロピル基等の炭素数1〜4のアルキル基;ビニル基、1−プロペニル基、及びアリル基等の炭素数2〜4のアルケニル基;エチニル基、1−プロピニル基、及び2−プロピニル基等の炭素数2〜4のアルキニル基;メトキシ基、エトキシ基、n−プロポキシ基、及びイソプロポキシ基等の炭素数1〜4のアルコキシ基;フッ素原子、塩素原子、臭素原子、及びヨウ素原子等のハロゲン原子;アミノ基;ニトロ基が挙げられる。一般式(2)で表される化合物において、Yは無置換のフェニル基又はナフタレン−2−イル基が好ましい。 In the compound represented by the general formula (2), Y is a phenyl group which may have a substituent, or a naphthyl group which may have a substituent. Examples of the substituent that Y may have include an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, an n-propyl group, and an isopropyl group; a vinyl group, a 1-propenyl group, and an allyl group. C2-C4 alkenyl group; C2-C4 alkynyl group such as ethynyl group, 1-propynyl group and 2-propynyl group; methoxy group, ethoxy group, n-propoxy group, isopropoxy group and the like Examples thereof include an alkoxy group having 1 to 4 carbon atoms; a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom; an amino group; and a nitro group. In the compound represented by the general formula (2), Y is preferably an unsubstituted phenyl group or a naphthalen-2-yl group.
一般式(2)で表される化合物において、−(CH2)q−で表されるアルキレン基の具体例としては、デカン−1,10−ジイル基、ウンデカン−1,11−ジイル基、ドデカン−1,12−ジイル基、トリデカン−1,13−ジイル基、及びテトラデカン−1,14−ジイル基が挙げられる。 In the compound represented by the general formula (2), specific examples of the alkylene group represented by — (CH 2 ) q — include decane-1,10-diyl group, undecane-1,11-diyl group, and dodecane. Examples include -1,12-diyl group, tridecane-1,13-diyl group, and tetradecane-1,14-diyl group.
一般式(I)における、R4、R5、及びR6の具体例としては、メチル基、エチル基、n−プロピル基、及びイソプロピル基が挙げられる。一般式(I)で表される基としては、R4、R5、及びR6の何れもが、エチル基である基が好ましい。 Specific examples of R 4 , R 5 , and R 6 in the general formula (I) include a methyl group, an ethyl group, an n-propyl group, and an isopropyl group. As the group represented by the general formula (I), a group in which R 4 , R 5 and R 6 are all ethyl groups is preferable.
一般式(II)における、R7、R8、R9、R10、及びR11の具体例としては、メチル基、及びエチル基が挙げられる。 Specific examples of R 7 , R 8 , R 9 , R 10 , and R 11 in the general formula (II) include a methyl group and an ethyl group.
一般式(2)、一般式(IV)、及び一般式(V)におけるハロゲン原子であるXの具体例としては、塩素原子、臭素原子、ヨウ素原子が挙げられる。 Specific examples of X that is a halogen atom in the general formula (2), the general formula (IV), and the general formula (V) include a chlorine atom, a bromine atom, and an iodine atom.
水性緩衝液中の界面活性剤の濃度は、5.0×10−4〜2.0×10−2mol/Lである。 The concentration of the surfactant in the aqueous buffer is 5.0 × 10 −4 to 2.0 × 10 −2 mol / L.
〔緩衝剤〕
水性緩衝液に含まれる緩衝剤は、特に限定されず、従来から種々の用途で使用されている緩衝液に含まれる緩衝剤を用いることができる。緩衝剤としては、リン酸のナトリウム塩やカリウム塩のような含金属の緩衝剤、及び金属不含の緩衝剤の何れも使用することができる。含窒素デンドリマー化合物のミセルの水性分散液を塗布して使用する場合に金属塩が析出しないことや、得られる含窒素デンドリマー化合物のミセルの水性分散液を動物、植物等の生物に由来する生体材料の処理に応用しやすいことから、金属不含の緩衝剤が好ましい。
[Buffer]
The buffer contained in the aqueous buffer is not particularly limited, and a buffer contained in buffers conventionally used for various purposes can be used. As the buffer, any of metal-containing buffers such as sodium phosphate and potassium salts of phosphate and metal-free buffers can be used. When an aqueous dispersion of micelles containing nitrogen-containing dendrimer compounds is applied and used, the metal salt does not precipitate, and the resulting aqueous dispersion of micelles containing nitrogen-containing dendrimer compounds is a biological material derived from organisms such as animals and plants. A metal-free buffering agent is preferable because it can be easily applied to the above-described treatment.
金属不含の緩衝剤の具体例としては、Tris(トリス(ヒドロキシメチル)アミノメタン)、HEPES(4−(2−ヒドロキシエチル)−1−ピペラジンエタンスルホン酸)、ACES(N−2−(アセトアミド)−2−アミノエタンスルホン酸)、MES(2−モルホリノエタンスルホン酸)、ADA(N−(2−アセトアミド)イミノジ酢酸)、PIPES(ピペラジン−1,4−ビス(2−エタンスルホン酸))、コラミン塩酸(N,N,N−トリメチル−2−アミノエタンアミニウムクロリド)、BES(N,N−ビス(2−ヒドロキシエチル)−2−アミノエタンスルホン酸)、TES(N−トリス(ヒドロキシメチル)メチル−2−アミノエタンスルホン酸)、アセトアミドグリシン、トリシン(N−[トリス(ヒドロキシメチル)メチル]グリシン)、グリシンアミド、及びビシン(2−ビス(2−ヒドロキシエチル)アミノ酢酸)、TMAH(テトラメチルアミンヒドロキサイド)、及び塩酸が挙げられる。 Specific examples of the metal-free buffer include Tris (tris (hydroxymethyl) aminomethane), HEPES (4- (2-hydroxyethyl) -1-piperazineethanesulfonic acid), ACES (N-2- (acetamide) ) -2-aminoethanesulfonic acid), MES (2-morpholinoethanesulfonic acid), ADA (N- (2-acetamido) iminodiacetic acid), PIPES (piperazine-1,4-bis (2-ethanesulfonic acid)) , Collamine hydrochloride (N, N, N-trimethyl-2-aminoethaneaminium chloride), BES (N, N-bis (2-hydroxyethyl) -2-aminoethanesulfonic acid), TES (N-tris (hydroxy) Methyl) methyl-2-aminoethanesulfonic acid), acetamidoglycine, tricine (N- [tris (hydroxy Chill) methyl] glycine), glycinamide, and Bicine (2- bis (2-hydroxyethyl) amino acid), TMAH (tetramethyl amine hydroxide), and include hydrochloride.
水性緩衝液中の緩衝剤の濃度は、特に限定されず、水性緩衝液が所望するpHとなるように、緩衝剤の種類に応じて適宜選択される。典型的には、水性緩衝液のpHは6.6〜8.5が好ましい。 The concentration of the buffering agent in the aqueous buffer is not particularly limited and is appropriately selected according to the type of the buffering agent so that the aqueous buffer has a desired pH. Typically, the pH of the aqueous buffer is preferably 6.6 to 8.5.
<有機溶媒除去工程>
有機溶媒除去工程では、混合工程で得られる含窒素デンドリマー化合物の有機溶媒溶液と、水性緩衝液と、の混合液から有機溶媒を除去する。混合液から有機溶媒を除去することにより、混合液中の有機溶媒量の減少とともに、含窒素デンドリマー化合物が有機溶媒溶液から、水性緩衝液に移行する。含窒素デンドリマー化合物が水性緩衝液に移行すると、水性緩衝液は界面活性剤を含有するため、含窒素デンドリマーの表面に界面活性剤が集まり、含窒素デンドリマー化合物を中心とするミセルが形成される。
<Organic solvent removal step>
In the organic solvent removal step, the organic solvent is removed from the mixed solution of the organic solvent solution of the nitrogen-containing dendrimer compound obtained in the mixing step and the aqueous buffer solution. By removing the organic solvent from the mixed solution, the nitrogen-containing dendrimer compound is transferred from the organic solvent solution to the aqueous buffer solution with a decrease in the amount of the organic solvent in the mixed solution. When the nitrogen-containing dendrimer compound is transferred to the aqueous buffer solution, the aqueous buffer solution contains a surfactant. Therefore, the surfactant is collected on the surface of the nitrogen-containing dendrimer, and micelles centering on the nitrogen-containing dendrimer compound are formed.
有機溶媒除去工程において、混合液から有機溶媒を除去する方法は特に限定されない。混合液から有機溶媒を除去する好適な方法としては、有機溶媒の沸点、又は有機溶媒と水との共沸点以上に混合液を加熱し、混合液から有機溶媒を留去する方法が挙げられる。混合液を加熱して有機溶媒を留去する場合、加熱温度を下げる目的等で、減圧下で混合液を加熱してもよい。 In the organic solvent removal step, the method for removing the organic solvent from the mixed solution is not particularly limited. As a suitable method for removing the organic solvent from the mixed solution, there is a method in which the mixed solution is heated to the boiling point of the organic solvent or the azeotropic point of the organic solvent and water to distill off the organic solvent from the mixed solution. When the mixture is heated to distill off the organic solvent, the mixture may be heated under reduced pressure for the purpose of lowering the heating temperature.
有機溶媒と水とが共沸する場合、有機溶媒と水との混合蒸気が留出するラインに、凝縮液を分液可能なコンデンサーを取り付け、凝縮液から分離される水相を混合液に戻しながら有機溶媒の除去を行ってもよい。また、有機溶媒と水とが共沸する場合、有機溶媒とともに留出する水と概ね同等の量の水を混合液に加えながら、有機溶媒の除去を行ってもよい。有機溶媒と水とが共沸する場合、前述のように、混合液に水を加えながら有機溶媒を除去することによって、得られる含窒素デンドリマー化合物のミセルの水性分散液の濃度が過度に高くなることを防ぐことができる。 When the organic solvent and water azeotrope, a condenser capable of separating the condensate is attached to the line where the mixed vapor of the organic solvent and water distills, and the aqueous phase separated from the condensate is returned to the mixture. However, the organic solvent may be removed. Moreover, when an organic solvent and water azeotrope, you may remove an organic solvent, adding the water of a substantially equivalent quantity to the water distilled with an organic solvent to a liquid mixture. When the organic solvent and water azeotrope, as described above, the concentration of the aqueous dispersion of micelles of the resulting nitrogen-containing dendrimer compound becomes excessively high by removing the organic solvent while adding water to the mixture. Can be prevented.
混合液中に有機溶媒が残存する状態で、有機溶媒の除去を停止することもできるが、含窒素デンドリマー化合物の有効利用の観点から、混合液から有機溶媒を、98質量%以上除去するのが好ましく、99質量%以上除去するのがより好ましく、100質量%除去するのが最も好ましい。有機溶媒除去工程後に、混合液に有機溶媒が残存している場合、分液等の方法により、混合液から有機溶媒相を除去すればよい。 Although removal of the organic solvent can be stopped in a state where the organic solvent remains in the mixed solution, 98% by mass or more of the organic solvent is removed from the mixed solution from the viewpoint of effective use of the nitrogen-containing dendrimer compound. It is preferable to remove 99% by mass or more, and it is most preferable to remove 100% by mass. When the organic solvent remains in the mixed solution after the organic solvent removing step, the organic solvent phase may be removed from the mixed solution by a method such as liquid separation.
混合液から有機溶媒を除去して得られる、含窒素デンドリマー化合物のミセルの水性分散液は、必要に応じて、加水、又は濃縮され、含窒素デンドリマー化合物のミセルの濃度を調整されてもよい。 The aqueous dispersion of micelles of nitrogen-containing dendrimer compounds obtained by removing the organic solvent from the mixed solution may be hydrated or concentrated as necessary to adjust the concentration of micelles of nitrogen-containing dendrimer compounds.
以上説明した本発明の方法によれば、含窒素デンドリマー化合物を、高効率で水に対して可溶化させて、含窒素デンドリマー化合物のミセルの水性分散液を製造することができる。本発明の方法により製造される、含窒素デンドリマー化合物のミセルの水性分散液は、触媒材料、電子材料、発光材料等の種々の用途に適用され得る。 According to the method of the present invention described above, an aqueous dispersion of micelles of a nitrogen-containing dendrimer compound can be produced by solubilizing the nitrogen-containing dendrimer compound with high efficiency in water. The aqueous dispersion of micelles of a nitrogen-containing dendrimer compound produced by the method of the present invention can be applied to various uses such as catalyst materials, electronic materials, and luminescent materials.
以下、本発明を実施例によりさらに詳細に説明するが、本発明はこれらの実施例に限定されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to these Examples.
実施例1及び2では、フェニルアゾメチンデンドリマー化合物として、下式で表される化合物(DPAG4er)を用いた。
[実施例1]
DPAG4erをクロロホルム1mlに溶解させて、DPAG4erの濃度が5μMであるDPAG4erのクロロホルム溶液を得た。得られたクロロホルム溶液に、下式
DPAG4er was dissolved in 1 ml of chloroform to obtain a DPAG4er chloroform solution having a DPAG4er concentration of 5 μM. In the resulting chloroform solution,
[実施例2]
緩衝液に含まれる緩衝剤を、リン酸塩からTris、ACES、又はHEPESに変えることの他は、実施例1と同様にして、DPAG4erのミセルの水性分散液を調製した。実施例1と同様にして得られた水性分散液を移した後の容器に再度クロロホルムを加えて、デンドリマーによる着色を観察したところ、着色は観察されなかった。
[Example 2]
An aqueous dispersion of DPAG4er micelles was prepared in the same manner as in Example 1 except that the buffer contained in the buffer was changed from phosphate to Tris, ACES, or HEPES. Chloroform was added again to the container after transferring the aqueous dispersion obtained in the same manner as in Example 1, and when coloring with a dendrimer was observed, no coloring was observed.
[比較例1]
下式
また、実施例1と同様にして得られた水性分散液を移した後の容器に再度クロロホルムを加えて、デンドリマーによる着色を観察したところ、黄色の着色が観察された。
[Comparative Example 1]
The following formula
In addition, chloroform was added again to the container after the aqueous dispersion obtained in the same manner as in Example 1 was transferred, and the coloration by the dendrimer was observed. As a result, yellow coloration was observed.
実施例1及び2によれば、水性分散液を水性分散液の調製に用いた容器から他の容器に移した後に、水性分散液の調製に用いた容器中に含窒素デンドリマーが殆ど残存していないことから、含窒素デンドリマー化合物が水に対して良好に可溶化していることが分かる。他方、比較例1では、水性分散液を水性分散液の調製に用いた容器から他の容器に移した後に、水性分散液の調製に用いた容器中に含窒素デンドリマーが残存しており、含窒素デンドリマーの水に対する可溶化率が低い。 According to Examples 1 and 2, most of the nitrogen-containing dendrimer remains in the container used for preparing the aqueous dispersion after the aqueous dispersion is transferred from the container used for preparing the aqueous dispersion to another container. From this, it can be seen that the nitrogen-containing dendrimer compound is well solubilized in water. On the other hand, in Comparative Example 1, after the aqueous dispersion was transferred from the container used for the preparation of the aqueous dispersion to another container, the nitrogen-containing dendrimer remained in the container used for the preparation of the aqueous dispersion. The solubilization rate of nitrogen dendrimers in water is low.
Claims (3)
前記有機溶媒溶液と、5.0×10−4〜2.0×10−2mol/Lの濃度の界面活性剤を含有する水性緩衝液とを混合する混合工程と、
前記有機溶媒溶液と前記水性緩衝液との混合液から有機溶媒を除去する有機溶媒除去工程とを含む、含窒素デンドリマー化合物のミセルの水性分散液の製造方法。 A dendrimer solution preparation step of preparing an organic solvent solution of a nitrogen-containing dendrimer compound by dissolving a nitrogen-containing dendrimer compound having at least one nitrogen atom to which a metal element can coordinate, in a solvent having low miscibility with water;
A mixing step of mixing the organic solvent solution and an aqueous buffer containing a surfactant having a concentration of 5.0 × 10 −4 to 2.0 × 10 −2 mol / L;
The manufacturing method of the aqueous dispersion of the micelle of a nitrogen-containing dendrimer compound including the organic-solvent removal process of removing an organic solvent from the liquid mixture of the said organic-solvent solution and the said aqueous buffer.
上記一般式(1)中のBは、前記Aに対して1個のアゾメチン結合を形成する次式
上記一般式(1)中のRは、末端基として前記Bにアゾメチン結合を形成する次式
nは、フェニルアゾメチンデンドリマーの前記Bの構造を介しての世代数を表し;
mは、フェニルアゾメチンデンドリマーの末端基Rの数を表し、n=0のときはm=pであり、n≧1のときはm=2npである。) The method for producing an aqueous dispersion of micelles of a nitrogen-containing dendrimer compound according to claim 1, wherein the nitrogen-containing dendrimer compound is a phenylazomethine dendrimer compound represented by the following general formula (1).
B in the above general formula (1) is the following formula that forms one azomethine bond to A.
R in the above general formula (1) is the following formula that forms an azomethine bond with B as a terminal group.
n represents the number of generations of the phenylazomethine dendrimer through the B structure;
m represents the number of terminal groups R of the phenylazomethine dendrimer. When n = 0, m = p, and when n ≧ 1, m = 2 n p. )
Y−O−(CH2)q−Qr+・rX−・・・(2)
(上記一般式(2)中、Yは置換基を有してもよいフェニル基又は置換基を有してもよいナフチル基であり、qは10〜14の整数であり、rは1又は2であり、Qr+は、下記一般式(I):
Y-O- (CH 2) q -Q r + · rX - ··· (2)
(In the general formula (2), Y is a phenyl group which may have a substituent or a naphthyl group which may have a substituent, q is an integer of 10 to 14, and r is 1 or 2) And Q r + is the following general formula (I):
Priority Applications (1)
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JP2013010683A (en) * | 2011-06-01 | 2013-01-17 | Tokyo Ohka Kogyo Co Ltd | Method for producing carbon nanotube and catalyst for producing carbon nanotube |
JP2013034939A (en) * | 2011-08-08 | 2013-02-21 | Tokyo Ohka Kogyo Co Ltd | Method for manufacturing substrate having dispersed particle of dendrimer compound on surface, and substrate having dispersed particle of dendrimer compound on surface |
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JP2008222628A (en) * | 2007-03-12 | 2008-09-25 | Japan Science & Technology Agency | Quaternary ammonium salt, surfactant for solubilizing hydrophobic macromolecule, and its manufacturing method |
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