JP2014127583A - Semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor module the inductance of which can be reduced furthermore, by increasing the region of a blade part.SOLUTION: A semiconductor module 1 includes an emitter electrode 11 and a collector electrode 12, an emitter bus bar 13 connected with the emitter electrode 11, a collector bus bar 14 connected with the collector electrode 12, a first blade 15 connected with the emitter electrode 11, and a second blade 16 connected with the collector electrode 12. The emitter bus bar 13 has a region overlapping the second blade 16, the collector bus bar 14 has a region overlapping the first blade 15, a gap 17 is formed between the emitter bus bar 13 and the first blade 15, and a second gap 18 is formed between the collector bus bar 14 and the second blade 16.

Description

  The present invention relates to a semiconductor module.

  2. Description of the Related Art Conventionally, a semiconductor module that is used in a power conversion device that controls an electric device such as a motor includes a switching element (for example, IGBT) and a rectifying element (for example, a freewheeling diode (FWD)). In such a semiconductor module, it is important to reduce inductance in order to reduce a surge voltage that is a voltage in a direction that hinders a steady current.

  There is known a technique for reducing the inductance by optimizing the structure of a bus bar that is a rod-shaped metal that supplies power to a switching element or the like. Specifically, the conductive paths of bus bars having different polarities (positive bus bar, negative bus bar) are arranged close to each other, and the mutual inductance between the positive bus bar and the negative bus bar is increased, thereby reducing the inductance. . For example, in the semiconductor module described in Patent Document 1, both the positive side bus bar and the negative side bus bar are loop wires, and additional wires are provided at locations where the loop wires of the positive side bus bar and the negative side bus bar are not close to each other. The conductive path in which the additional wiring of the positive bus bar is added to the loop wiring of the negative bus bar and the conductive path in which the additional wiring of the negative bus bar is added to the loop wiring of the negative bus bar are close to each other (the shape of the conductive path is positive bus bar). And the negative electrode bus bar have shapes corresponding to each other (same shape) to reduce inductance.

Japanese Patent Laid-Open No. 2002-14152

  As a bus bar used in the semiconductor module as described above, there is a structure (unshaped structure) integrated with an electrode. Such an irregularly shaped electrode and bus bar are generated from a member (deformed material) in which a thick electrode plate (part that becomes an electrode) and a thin electrode plate (part that becomes a bus bar) are integrated. The Specifically, it is generated by punching out the portion of the electrode plate where the thickness of the deformed material is thin, excluding the area where the bus bar is provided. When punching out a thin electrode plate, it is difficult to completely punch out other parts, leaving only the part that will become the bus bar, and at the boundary of the thin electrode plate with the thick electrode plate This leaves a small amount of electrode plate (burrs).

  The inventors have studied not to completely remove the burrs remaining at the time of punching, but to reduce the inductance by effectively using the burrs. As a result, the present inventors have found that, instead of removing the area adjacent to the bus bar, leaving this area reduces the inductance by shortening the current path and enlarging the cross-sectional area. Hereinafter, a region adjacent to the bus bar and usable for reducing the inductance is referred to as a blade portion.

  However, the region where the above-described blade portion can be provided has been limited due to restrictions during molding of the semiconductor module. That is, normally, a semiconductor module is molded by molding, and it is necessary to perform bending with the same height of each bus bar at the time of molding. For example, the blade portion integrally molded with the positive bus bar is connected to the positive bus bus bar. When bending is performed in the same manner as described above, the blade portion may come into contact with the negative electrode bus bar, and this limits the region in which the blade portion can be provided. As described above, since the region where the blade part can be provided is limited, the effect of reducing the inductance by the blade part is not sufficient.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor module capable of further reducing inductance by enlarging the region of the blade portion.

  The present invention relates to first and second electrodes stacked in a first direction, and a semiconductor element disposed between the first and second electrodes and electrically connected to the first and second electrodes. And a first bus bar projecting in a second direction intersecting the first direction and a second bus bar projecting in the second direction and connected to the second electrode. A first blade portion projecting in a second direction so as to be adjacent to the first bus bar in a third direction intersecting the first and second directions, and connected to the second electrode, And a second blade portion that projects in the second direction so as to be adjacent to the second bus bar in the direction of 3, and the first bus bar has a second shape when viewed from the first direction. The second bus bar has an area that overlaps with the first blade part when viewed from the first direction. Thus, a first gap is formed between the first bus bar and the first blade portion that are adjacent in the third direction, and the second bus bar and the second bus bar that are adjacent in the third direction. A semiconductor module in which a second gap portion is formed between the blade portions is provided.

  When viewed from the first direction, this semiconductor module has a region where the first bus bar connected to the first electrode overlaps the second blade portion connected to the second electrode. . Similarly, when viewed from the first direction, the second bus bar connected to the second electrode has a region overlapping the first blade portion connected to the first electrode. Since the bus bar and the blade part overlap each other, the magnetic field generated from the current flowing through the bus bar generates an eddy current flowing in the relative direction to the current flowing through the bus bar. This reduces the inductance.

  And between the 1st bus bar and the 1st blade part which adjoins the 1st bus bar, the 1st crevice part which is the field where the 1st bus bar and the 1st blade part are not connected Therefore, the first blade portion and the first bus bar can be formed into independent shapes. Similarly, between the second bus bar and the second blade part adjacent to the second bus bar, the second gap part which is an area where the second bus bar and the second blade part are not connected. Therefore, the second blade portion and the second bus bar can be formed into independent shapes.

  Thereby, since the 1st blade part is separated from the 1st bus bar and formed as an independent shape, even if it bends the 1st bus bar, the 1st blade part is the shape of the 1st bus bar. There is no risk of deformation under the influence of changes. That is, there is no possibility that the first blade portion is deformed and comes into contact with the second bus bar, so that the area of the first blade portion can be enlarged.

  Similarly, since the second blade portion is formed as an independent shape separated from the second bus bar, even if the second bus bar is bent, the second blade portion has the shape of the second bus bar. There is no risk of deformation under the influence of changes. That is, since there is no possibility that the second blade portion is deformed and comes into contact with the first bus bar, the area of the second blade portion can be increased.

  As a result, since the region of the first blade portion that generates eddy current can be increased, the mutual inductance action between the first blade portion and the second bus bar can be increased, and the inductance of the second bus bar can be increased. It becomes possible to reduce.

  Similarly, since the area of the second blade portion that generates eddy current can be increased, the mutual inductance action between the second blade portion and the first bus bar can be further increased, and the inductance in the first bus bar can be increased. It becomes possible to reduce.

  In the semiconductor module according to the present invention, the first bus bar is bent inward in the first direction from the first base end portion disposed on the first electrode side and the first base end portion. The second bus bar has a second base end portion disposed on the second electrode side, and the second base end portion. A second body portion that is bent inward in the first direction and then extends in the second direction, and the first and second base end portions are in the same direction in the second direction. The first and second proximal end portions are arranged at the same position in the first direction, and the first blade portion is the second main body portion in the second direction. The second blade portion extends in the second direction to the vicinity of the bending position on the first base end side of the first main body portion. Has a configuration It may be.

  At the time of molding, it is preferable that the heights of the first and second bus bars in the first direction are the same. For this reason, the first and second bus bars can be bent and formed such that the first and second bus bars are in the same position in the first direction.

  In addition, since the first blade portion extends to a position close to the bent position on the second base end side of the second main body portion in the second direction, the first blade portion and the second blade portion The area where the second base end of the second bus bar overlaps can be enlarged, and the inductance of the second bus bar can be further reduced.

  Similarly, since the second blade portion extends to a position close to the bent position on the first base end side of the first main body portion in the second direction, the second blade portion and The area where the first base end of the first bus bar overlaps can be enlarged, and the inductance of the first bus bar can be further reduced.

  In addition, the semiconductor module according to the present invention is spaced apart in the third direction, and the first and second gap portions are arranged between the first bus bar and the second bus bar in the third direction. The structure arrange | positioned between these may be sufficient.

  By connecting the outer end portion of the blade portion in the third direction to the end portion of the electrode, the width of the blade portion can be maximized, and the inductance can be further reduced.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor module which can aim at the further reduction of an inductance by enlarging the area | region of a blade | wing part can be provided.

1 is a perspective view showing a semiconductor module according to a first embodiment of the present invention. It is a side view of the semiconductor module shown in FIG. It is a figure which shows the cross-sectional structure along the III-III line | wire of the semiconductor module shown in FIG. FIG. 2 is a plan view of the semiconductor module shown in FIG. 1. It is a figure explaining generation | occurrence | production of an eddy current. It is a figure explaining generation | occurrence | production of an eddy current. It is a perspective view which shows an example of the conventional semiconductor module. It is a perspective view which shows the semiconductor module which concerns on 2nd Embodiment of this invention. It is sectional drawing along the IX-IX line of the semiconductor module shown in FIG. It is a top view of the semiconductor module shown in FIG. It is a side view of the semiconductor module shown in FIG.

  Hereinafter, preferred embodiments of a semiconductor module according to the present invention will be described with reference to the drawings. In the description of the drawings, the same or corresponding elements are denoted by the same reference numerals, and redundant description is omitted.

  Hereinafter, the semiconductor module described in the first embodiment and the second embodiment is applied to, for example, an inverter of a motor system mounted on a vehicle (for example, a hybrid vehicle or an electric vehicle) having a three-phase AC motor as a drive source. Is. Such an inverter has, for example, three semiconductor modules and a booster circuit (capacitor, reactor).

[First embodiment]
First, the semiconductor module according to the first embodiment will be described with reference to FIGS. A semiconductor module 1 shown in FIG. 1 has an IGBT as a switching element (power element, semiconductor element). As shown in FIG. 2, the semiconductor module 1 includes an emitter electrode (first electrode) 11 and a collector electrode (second electrode) as a pair of electrodes arranged facing the Z direction (first direction, thickness direction). Electrode) 12. The semiconductor module 1 includes an IGBT 21 and an FWD 31 between the emitter electrode 11 and the collector electrode 12.

  As shown in FIG. 3, the emitter electrode 11 and the collector electrode 12 form a plate shape and are stacked in the Z direction. Between the emitter electrode 11 and the collector electrode 12, the 1st laminated body 20 provided with IGBT21 and the 2nd laminated body 30 provided with FWD31 are arrange | positioned. The 1st laminated body 20 and the 2nd laminated body 30 are spaced apart and arrange | positioned at the Y direction (3rd direction) which cross | intersects Z direction.

  One surface of the IGBT 21 is joined to the collector electrode 12 via the solder 23. The other surface of the IGBT 21 is joined to the spacer 22 via the solder 24. The spacer 22 is joined to the emitter electrode 11 via the solder 25.

  One surface of the FWD 31 is joined to the collector electrode 12 via the solder 33. The other surface of the FWD 31 is joined to the spacer 32 via the solder 34. The spacer 32 is joined to the emitter electrode 11 via the solder 35.

  The FWD 31 is connected between the collector electrode 12 and the emitter electrode 11 and functions as a free-wheeling diode that bypasses the load current in order to prevent breakage during reverse voltage application. The cathode electrode of the FWD 31 is connected to the collector electrode 12, and the anode electrode of the FWD 31 is connected to the emitter electrode.

  The emitter electrode 11 and the collector electrode 12 are each made of a material having high thermal conductivity, and are made of, for example, copper or aluminum. Moreover, it is preferable to reduce the solder stress when it is made of a material whose thermal expansion coefficient can be easily controlled (for example, aluminum silicon carbide (AlSiC) or copper molybdenum (Cu—Mo)). The emitter electrode 11 and the collector electrode 12 also function as a heat sink that cools the stacked bodies 20 and 30.

  The semiconductor module 1 is provided with a signal terminal (not shown) that gives a signal to the gate electrode (not shown) of the IGBT 21. In order to prevent conduction between the emitter electrode 11 and the collector electrode 12, which are electrodes having different potentials, and the signal terminal, a spacer 22 and a spacer 33 are provided.

  Each component (emitter electrode 11, collector electrode 12, IGBT 21, FWD 31, spacers 22 and 32, solders 23, 24, 25, 33, 34, and 35) is sealed with a mold resin 41. In this way, the above-described components are protected by sealing with the mold resin 41. Further, the solders 23, 24, 25, 33, 34, and 35 are protected by the mold resin 41, and the reliability as solder is improved. The outer surface of the emitter electrode 11 and the outer surface of the collector electrode 12 are exposed to the outside (not covered with mold resin). 1 and 2, the illustration of the mold resin 41 is omitted.

  The semiconductor module 1 of this embodiment is disposed adjacent to the emitter bus bar 13 extending from the emitter electrode 11, the collector bus bar 14 extending from the collector electrode 12, and the emitter bus bar 13 as shown in FIGS. 1, 2, and 4. A first blade portion 15 extending from the emitter electrode 11, and a second blade portion 16 disposed adjacent to the collector bus bar 14 and extending from the collector electrode 12.

  The emitter bus bar 13 is electrically connected to the IGBT 21 through the emitter electrode 11. The collector bus bar 14 is electrically connected to the IGBT 21 through the collector electrode 12. The emitter bus bar 13 and the collector bus bar 14 are formed so as to project in the same direction. The emitter bus bar 13 protrudes from the emitter electrode 11 in the X direction (second direction). The collector bus bar 14 extends from the collector electrode 12 in the X direction. The X direction is a direction that intersects the Y direction and the Z direction.

  The emitter bus bar 13 includes a first base end portion 13a disposed on the emitter electrode 11 side, and a first main body portion that is bent inward in the Z direction from the first base end portion 13a and then extends in the X direction. 13c. A bent portion 13b is formed between the first base end portion 13a and the first main body portion 13c. The first main body 13c is disposed, for example, at the center in the Z direction.

  The first blade portion 15 is disposed adjacent to the emitter bus bar 13 in the Y direction. Between the 1st blade | wing part 15 and the emitter bus bar 13, the 1st clearance gap part 17 which is an area | region where the 1st blade | wing part 15 and the emitter bus bar 13 are not connected is formed.

  The 1st blade | wing part 15 and the 1st base end part 13a are arrange | positioned in the same position in the Z direction. Further, the first blade portion 15 projects to the vicinity of the bent portion 13b of the emitter bus bar 13 in the X direction. The emitter bus bar 13 and the first blade portion 15 are thinner than the emitter electrode 11.

  The collector bus bar 14 includes a second base end portion 14a disposed on the collector electrode 12 side, and a second main body that is bent inward in the Z direction from the second base end portion 14a and then extends in the X direction. Part 14c. A bent portion 14b is formed between the second base end portion 14a and the second main body portion 14c. For example, the second main body 14c is disposed at the center in the Z direction.

  The second blade portion 16 is disposed adjacent to the collector bus bar 14 in the Y direction. Between the 2nd blade | wing part 16 and the collector bus bar 14, the 2nd clearance gap 18 which is an area | region where the 2nd blade | wing part 16 and the collector bus bar 14 are not connected is formed.

  The first and second gap portions 17 and 18 are formed between the emitter bus bar 13 and the collector bus bar 14 in the Y direction. The first gap portion 17 is formed at a position shifted from the second gap portion 18 in the Y direction, and is formed closer to the emitter bus bar 13 than the second gap portion 18.

  As shown in FIG. 2, the first main body portion 13c and the second main body portion 14c are arranged at the same position in the Z direction. The first main body portion 13c and the second main body portion 14c are arranged at the same height when viewed from the Y direction. The bent portion 13b of the emitter bus bar 13 and the bent portion 14b of the collector bus bar 14 are arranged at the same position in the X direction.

  The 2nd blade | wing part 16 and the 2nd base end part 14a are arrange | positioned in the same position in the Z direction. Further, the second blade portion 16 extends to the vicinity of the bent portion 14b of the collector bus bar 14 in the Z direction. The collector bus bar 14 and the second blade portion 16 are thinner than the collector electrode 12.

  The collector bus bar 14 does not have a region overlapping with the emitter bus bar 13 when viewed from the Z direction. The emitter bus bar 13 and the collector bus bar 14 are arranged at different positions in the Y direction. The first blade portion 15 is disposed at a position overlapping the collector bus bar 14 when viewed from the Z direction. The first blade portion 15 is disposed to face the base end portion 14 a of the collector bus bar 14. The first blade portion 15 extends to the vicinity of the bent portion 14b of the collector bus bar 14 in the X direction. The second blade portion 16 is disposed at a position overlapping the emitter bus bar 13 when viewed from the Z direction. The second blade portion 16 is disposed to face the base end portion 13 a of the emitter bus bar 13. The second blade portion 16 extends to the vicinity of the bent portion 13b of the emitter bus bar 13 in the X direction.

  The first blade portion 15 is arranged so that an eddy current generated by a magnetic field generated by a current flowing through the collector bus bar 14 flows. The second blade portion 16 is arranged such that an eddy current generated by a magnetic field generated by a current flowing through the emitter bus bar 13 flows.

  The emitter bus bar 13 and the first blade 15 are formed integrally with the emitter electrode 11. The collector bus bar 14 and the second blade portion 16 are formed integrally with the collector electrode 12. Similar to the emitter electrode 11, the collector electrode 12, the emitter bus bar 13, and the collector bus bar 14, for example, a conductor such as copper or aluminum is used for the first and second blade portions 15 and 16.

  The emitter electrode 11, the emitter bus bar 13, and the first blade portion 15 are composed of a thick electrode plate (a portion that becomes the emitter electrode 11) and a thin electrode plate (a portion that becomes the emitter bus bar 13 and the first blade portion 15). And is manufactured from a member (deformed material) integrated with each other. The thick electrode plate becomes the emitter electrode 11 as it is. Further, the thin electrode plate is punched except for the portions that become the emitter bus bar 13 and the first blade portion 15, and the remaining portions after the punching become the emitter bus bar 13 and the first blade portion 15. The first gap portion 17 may be provided after punching or may be provided at the time of punching.

  The term “provided after punching” means that when the emitter bus bar 13 and the first blade portion 15 are generated by punching, the first gap portion 17 is not provided, and the emitter bus bar 13 and the first blade portion 15 are formed after punching. The 1st clearance gap part 17 is provided by isolate | separating between. On the other hand, the fact that the first gap portion 17 is provided at the time of punching means that the region of the first gap portion 17 is also punched at the time of punching, so that the first gap is simultaneously formed with the generation of the emitter bus bar 13 and the first blade portion 15. A portion 17 is provided. Note that the emitter electrode 11, the emitter bus bar 13, the first blade portion 15, and the first gap portion 17 described above also apply to the collector electrode 12, the collector bus bar 14, the second blade portion 16, and the second gap portion 18. Are generated or provided in the same manner as

  As shown in FIG. 4, the first and second gaps 17 and 18 are formed to be as narrow as possible by opening only the width necessary for press molding and the width necessary for the flow of the mold resin. Yes.

  Next, the operation of the semiconductor module 1 according to the first embodiment will be described. In this semiconductor module 1, when viewed from the first direction Z, the emitter bus bar 13 connected to the emitter electrode 11 has a region overlapping the second blade portion 16 connected to the collector electrode 12. Similarly, when viewed from the first direction Z, the collector bus bar 14 connected to the collector electrode 12 has a region that overlaps the first blade portion 15 connected to the emitter electrode 11. Since the bus bar 13 and the blade portion 16 overlap with each other, and the bus bar 14 and the blade portion 15 overlap with each other, the magnetic field generated from the current flowing through the bus bar causes the blade portion to An eddy current flowing in the direction is generated, and the inductance is reduced by the mutual inductance action.

  The mutual inductance action due to the generation of eddy current will be described with reference to FIGS. As shown in FIG. 5, the current flows in the emitter bus bar 13 in the direction away from the emitter electrode 11 (the direction from the top to the bottom in FIG. 5), and the collector bus bar 14 approaches the collector electrode 12 (see FIG. 5). The current flows in the direction from the bottom to the top of 5). In this case, when a magnetic field is generated in the direction of the arrow shown in FIG. 6, the first blade 15 is surrounded by broken lines a and b, and the second blade 16 is surrounded by broken lines c and d. Penetrates. In this case, since an eddy current is generated so as to generate a magnetic field that cancels the change in the magnetic field, the emitter bus bar 13 and the collector bus bar in the first blade portion 15 and the second blade portion 16 as shown in FIG. 14 and an eddy current T flowing in a relative direction flows. Therefore, as described above, the inductance is reduced by the mutual inductance action.

  As shown in the conventional example of FIG. 7, in the conventional semiconductor module 100, the bus bar 101 and the blade portion 102 are integrally formed. Therefore, when the bus bar 101 and the blade portion 102 are similarly bent during molding, the blade Since the portion 102 is in contact with the bus bar 103, the region where the blade portion 102 can be provided has been limited.

  In this regard, in the semiconductor module 1 according to the first embodiment, the emitter blade bar 13 and the first blade portion 15 adjacent to the emitter bus bar 13 and the second blade portion 16 adjacent to the collector bus bar 14 and the collector bus bar 14 are included. Are formed in the first gap portion 17 and the second gap portion 18, which are regions where the bus bar and the blade portion are not connected to each other. The second blade portion 16 can be shaped independently from the emitter bus bar 13 and the collector bus bar 14. Therefore, the first blade portion 15 and the second blade portion 16 can be provided without being affected by the shapes of the emitter bus bar 13 and the collector bus bar 14, respectively, and the range of the blade portion that generates eddy current can be increased. it can. Therefore, the mutual inductance action can be further increased, and the inductance can be further reduced.

  In the semiconductor module 1 according to the present embodiment, the emitter bus bar 13 and the collector bus bar 14 are bent so that the heights in the first direction Z are the same, and the first blade portion 15 and the second The blade portion 16 extends in the second direction X to the vicinity of the position in the second direction X where the emitter bus bar 13 and the collector bus bar 14 have the same height in the first direction Z. The emitter bus bar 13 When viewed from the direction Z of 1, the region from the connecting portion 13a to the emitter electrode 11 to the bent portion 13b (where the emitter bus bar 13 and the collector bus bar 14 are at the same height in the first direction Z) is the second region. The collector bus bar 14 is connected to the collector electrode 12 when viewed from the first direction Z. The area from 4a to the bent part 14b (the part where the emitter bus bar 13 and the collector bus bar 14 are at the same height in the first direction Z) is an area overlapping the first blade portion 15, thereby considering molding. However, the first blade portion 15 and the second blade portion 16 can be maximized, and the inductance can be further reduced.

  Further, in the semiconductor module 1 according to the present embodiment, the end portion 15X in the Y direction of the first blade portion 15 is formed up to the same position as the end portion 11X of the first electrode 11, and the second blade portion 16 The end portion 16X is configured to be formed up to the same position as the end portion 12X of the second electrode 12, so that the length of the blade portion in the Y direction is increased and the area for generating the eddy current is increased. Thus, the inductance can be further reduced. The blade part is formed to the outside of the bus bar in the Y direction.

[Second Embodiment]
Next, a semiconductor module according to the second embodiment will be described with reference to FIGS. In the description of the present embodiment, differences from the first embodiment will be mainly described. 8 to 11, illustration of the mold resin is omitted.

  As illustrated in FIG. 9, the semiconductor module 50 according to the second embodiment does not include the spacer 22 and the spacer 32 that the semiconductor module 1 according to the first embodiment has. A concave portion 53 is formed in the emitter electrode 51. The concave portion 53 has a bottom portion disposed closer to the collector electrode 12 than the portions 52 and 54 adjacent in the X direction.

  And in the semiconductor module 1 of 1st Embodiment, the role of the electrical conduction prevention which the spacer 22 and the spacer 32 were carrying out was made into the lead frame shape in the semiconductor module 50 of 2nd Embodiment, as shown in FIG. The bottom of the concave portion 53 of the emitter electrode 51 bears. The bottom of the recess 53 is joined to the solders 24 and 34.

  In the semiconductor module 50, as described above, the emitter electrode 51 serves as a spacer, so that the spacer can be eliminated. Thus, the inductance reduction effect can be obtained in the same manner as the semiconductor module 1 while reducing the article cost and the processing cost.

  As mentioned above, although preferred embodiment of this invention was described, the semiconductor module which concerns on this invention is not restricted to the said semiconductor module 1 and semiconductor module 50 which concern on embodiment, The summary described in each claim It may be modified within a range not changed or applied to other things.

  For example, in the first embodiment and the second embodiment, the IGBT 21 is exemplified as the switching element and the FWD 31 is exemplified as the rectifying element. However, the present invention is not limited to this, and various switching elements and rectifying elements are described. An element can be used.

DESCRIPTION OF SYMBOLS 1,50 ... Semiconductor module, 11 ... Emitter electrode, 12 ... Collector electrode, 11X, 12X, 15X, 16X ... End part, 13 ... Emitter bus bar, 14 ... Collector bus bar, 13a, 14a ... Connection location, 13b, 14b ... Bending part 15 ... 1st blade | wing part, 16 ... 2nd blade | wing part, 17 ... 1st clearance gap part, 18 ... 2nd clearance gap part.

Claims (3)

First and second electrodes stacked in a first direction;
A semiconductor element disposed between the first and second electrodes and electrically connected to the first and second electrodes;
A first bus bar connected to the first electrode and projecting in a second direction intersecting the first direction;
A second bus bar connected to the second electrode and extending in the second direction;
A first blade portion connected to the first electrode and extending in the second direction so as to be adjacent to the first bus bar in a third direction intersecting the first and second directions; ,
A second blade connected to the second electrode and projecting in the second direction so as to be adjacent to the second bus bar in the third direction,
The first bus bar has a region overlapping with the second blade portion when viewed from the first direction;
The second bus bar has a region overlapping with the first blade portion when viewed from the first direction;
A first gap is formed between the first bus bar and the first blade that are adjacent in the third direction,
A semiconductor module, wherein a second gap is formed between the second bus bar and the second blade adjacent to each other in the third direction. The first bus bar includes a first base end portion disposed on the first electrode side, the first bus bar being bent inward in the first direction from the first base end portion, and then the second bus bar. A first body portion extending in a direction,
The second bus bar includes a second base end portion disposed on the second electrode side, the second bus bar being bent inward in the first direction from the second base end portion, and then the second bus bar. A second body portion extending in the direction,
The first and second proximal end portions are bent to extend to the same position in the second direction;
The first and second proximal ends are arranged at the same position in the first direction,
The first blade portion extends in the second direction to the vicinity of a bent position on the second base end side of the second main body portion,
2. The semiconductor module according to claim 1, wherein the second blade portion extends to a vicinity of a bent position on the first base end side of the first main body portion in the second direction. . The first bus bar and the second bus bar are spaced apart from each other in the third direction,
3. The semiconductor module according to claim 1, wherein the first and second gap portions are disposed between the first bus bar and the second bus bar in the third direction.

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