JP2014127443A - Photoelectric conversion element, image pick-up element and image pick-up device - Google Patents

Photoelectric conversion element, image pick-up element and image pick-up device Download PDF

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JP2014127443A
JP2014127443A JP2012285767A JP2012285767A JP2014127443A JP 2014127443 A JP2014127443 A JP 2014127443A JP 2012285767 A JP2012285767 A JP 2012285767A JP 2012285767 A JP2012285767 A JP 2012285767A JP 2014127443 A JP2014127443 A JP 2014127443A
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light
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wavelength conversion
charge generation
generation layer
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Kiyoaki Oshima
清朗 大島
Masaki Yoshinari
正樹 吉成
Ryota Tanaka
亮太 田中
Atsushi Watanabe
温 渡辺
Tetsuya Iida
哲哉 飯田
Takuo Shinohara
拓男 篠原
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Pioneer Corp
Pioneer Micro Technology Corp
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Pioneer Micro Technology Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which can determine the light intensity of some wavelength component of the incident light appropriately.SOLUTION: A photoelectric conversion element includes a charge generation layer 13 generating charges by the incident light, and a wavelength conversion layer 14 performing wavelength conversion of a wavelength component R of low photoelectric conversion efficiency in the charge generation layer of the light into a wavelength B of high photoelectric conversion efficiency. The wavelength conversion layer 14 is, when viewed from the side of the incident light, sectioned into a wavelength conversion region 14a for entering the light into the charge generation layer 13 while performing wavelength conversion of a wavelength component R of low photoelectric conversion efficiency, and a non-wavelength conversion region 14b for entering the light into the charge generation layer 13 without performing wavelength conversion of the wavelength component R of low photoelectric conversion efficiency.

Description

本発明は、光電変換を行う光電変換素子、該光電変換素子を備えた撮像素子、および該撮像素子を備えた撮像装置に関するものである。   The present invention relates to a photoelectric conversion element that performs photoelectric conversion, an imaging element that includes the photoelectric conversion element, and an imaging apparatus that includes the imaging element.

従来、面板、ターゲット電極、および光導電膜が設けられたターゲット部と、ターゲット部に電子ビームを照射する走査電子ビーム発生部とを備えた撮像装置が知られている。この撮像装置では、ターゲット部に光が入射すると、ターゲット電極近傍の光導電膜内に入射光の光強度に応じた電荷（電子・正孔対）が生成する。このうち正孔は、アバランシェ増倍により増幅され、ターゲット部の電子ビーム照射側に蓄積する。そして、ターゲット部に蓄積した正孔と電子ビームの電子とが結合し、結合時に外部回路に流れる電流を出力として取り出すことで、入射光像に対応した映像信号が得られる（特許文献１参照）。   2. Description of the Related Art Conventionally, there has been known an imaging apparatus including a target unit provided with a face plate, a target electrode, and a photoconductive film, and a scanning electron beam generating unit that irradiates the target unit with an electron beam. In this imaging device, when light is incident on the target portion, charges (electron / hole pairs) corresponding to the light intensity of the incident light are generated in the photoconductive film near the target electrode. Of these, the holes are amplified by avalanche multiplication and accumulated on the electron beam irradiation side of the target portion. Then, the holes accumulated in the target unit and the electrons of the electron beam are combined, and a current flowing in the external circuit at the time of combination is taken out as an output, thereby obtaining a video signal corresponding to the incident light image (see Patent Document 1). .

特開平７−０２９５０７号公報Japanese Patent Laid-Open No. 7-029507

従来の撮像装置におけるターゲット部（光電変換素子）では、非晶質光導電膜（電荷発生層）を構成するアモルファスＳｅ（セレン）の特性（バンドギャップが約２．０ｅＶ）上、波長４００ｎｍ前後に光電変換効率（感度）のピークがあり、６２０ｎｍより長波長の６５０ｎｍ付近では、ほとんど光電変換が行われない。このため、６５０ｎｍ付近の波長成分の光強度を求めることができず、特に撮像装置のカラー化にあたって問題となる。この問題に対し、アップコンバージョンの波長変換膜を用い、６５０ｎｍ付近の波長成分を４００ｎｍ付近の波長に変換することで、６５０ｎｍ付近の波長成分に対しても光電変換効率が十分に行われるようにすることが考えられる。しかしながら、この場合、ターゲット部から出力される映像信号は、元々４００ｎｍ付近の波長成分と、６５０ｎｍ付近から４００ｎｍ付近に波長変換された波長成分との双方を反映したものとなってしまう。このため、得られた映像信号からは、４００ｎｍ付近の波長成分と、６５０ｎｍ付近の波長成分とを区別することができず、結局、６５０ｎｍ付近の波長成分の光強度を求めることができなかった。
また、非晶質光導電膜が、広範囲の波長領域に亘って適度な光電変換効率を有している場合でも、波長成分ごとに映像信号が得られない場合には、各波長成分の光強度を求めることができなかった。 In the target portion (photoelectric conversion element) in the conventional imaging device, the wavelength is around 400 nm due to the characteristics (band gap is about 2.0 eV) of amorphous Se (selenium) constituting the amorphous photoconductive film (charge generation layer). There is a peak of photoelectric conversion efficiency (sensitivity), and almost no photoelectric conversion is performed in the vicinity of 650 nm, which is longer than 620 nm. For this reason, the light intensity of the wavelength component near 650 nm cannot be obtained, which becomes a problem particularly in colorization of the imaging apparatus. To solve this problem, a wavelength conversion film for up-conversion is used, and a wavelength component near 650 nm is converted to a wavelength near 400 nm, so that photoelectric conversion efficiency is sufficiently performed even for a wavelength component near 650 nm. It is possible. However, in this case, the video signal output from the target unit originally reflects both the wavelength component around 400 nm and the wavelength component wavelength-converted from around 650 nm to around 400 nm. For this reason, from the obtained video signal, the wavelength component near 400 nm and the wavelength component near 650 nm cannot be distinguished, and the light intensity of the wavelength component near 650 nm cannot be obtained after all.
In addition, even when the amorphous photoconductive film has an appropriate photoelectric conversion efficiency over a wide wavelength range, if an image signal cannot be obtained for each wavelength component, the light intensity of each wavelength component Could not be requested.

本発明は、入射した光のうちのある波長成分の光強度を適切に求めることを可能とする光電変換素子、該光電変換素子を備えた撮像素子、および該撮像素子を備えた撮像装置を提供することを課題としている。   The present invention provides a photoelectric conversion element capable of appropriately determining the light intensity of a certain wavelength component of incident light, an image pickup element including the photoelectric conversion element, and an image pickup apparatus including the image pickup element. The challenge is to do.

本発明の光電変換素子は、入射した光により電荷が発生する電荷発生層と、光のうち少なくとも一部の波長成分を波長変換する波長変換層と、を備え、波長変換層は、光の入射側から見て、光のうち少なくとも一部の波長成分を波長変換して、電荷発生層に入射させる波長変換領域と、光を、波長変換せずに、電荷発生層に入射させる非波長変換領域と、に区分されていることを特徴とする。   The photoelectric conversion element of the present invention includes a charge generation layer in which charge is generated by incident light, and a wavelength conversion layer that converts the wavelength component of at least a part of the light, and the wavelength conversion layer is configured to receive light. When viewed from the side, a wavelength conversion region for converting at least a portion of the wavelength component of light to be incident on the charge generation layer, and a non-wavelength conversion region for allowing light to enter the charge generation layer without wavelength conversion It is characterized by the following.

第１実施形態に係る撮像素子を示す図である。It is a figure which shows the image pick-up element which concerns on 1st Embodiment. 第１実施形態の撮像素子における光電変換素子および電子放出部を示す図である。It is a figure which shows the photoelectric conversion element and electron emission part in the image pick-up element of 1st Embodiment. 光電変換素子から出力される映像信号について説明する図である。It is a figure explaining the video signal output from a photoelectric conversion element. 第２実施形態に係る撮像素子を示す図である。It is a figure which shows the image pick-up element which concerns on 2nd Embodiment. 第３実施形態に係る撮像素子を示す図である。It is a figure which shows the image pick-up element which concerns on 3rd Embodiment. 第４実施形態に係る撮像素子を示す図である。It is a figure which shows the image pick-up element which concerns on 4th Embodiment. 第５実施形態の撮像素子における光電変換素子および電子放出部を示す図である。It is a figure which shows the photoelectric conversion element and electron emission part in the image pick-up element of 5th Embodiment. 第６実施形態の撮像素子を備えた撮像装置において、光電変換素子から出力される映像信号について説明する図である。It is a figure explaining the video signal output from a photoelectric conversion element in an imaging device provided with the image sensor of a 6th embodiment.

以下、添付の図面を参照して、本発明の第１実施形態に係る光電変換素子およびこれを備えた撮像素子について説明する。第１実施形態は、例えばカラー撮像用カメラ等の撮像装置に組み込まれる単一の撮像素子であって、撮像対象物のカラーイメージデータを構成するものである。   Hereinafter, a photoelectric conversion element according to a first embodiment of the present invention and an image pickup element including the same will be described with reference to the accompanying drawings. The first embodiment is a single image sensor incorporated in an imaging device such as a color imaging camera, and constitutes color image data of an imaging object.

図１に示すように、第１実施形態の撮像素子１は、撮像対象となる物体からの光が入射する光電変換素子１０と、光電変換素子１０に近接して対向配置された電子放出部２０と、光電変換素子１０と電子放出部２０との間に離間配置され、放出された電子の軌道を制御するメッシュ電極３０と、光電変換素子１０から出力された映像信号が入力する信号入力部４０とを備えている。   As shown in FIG. 1, the imaging device 1 according to the first embodiment includes a photoelectric conversion device 10 on which light from an object to be imaged is incident, and an electron emitting unit 20 that is disposed in close proximity to the photoelectric conversion device 10. And a mesh electrode 30 that is spaced between the photoelectric conversion element 10 and the electron emission unit 20 and controls the trajectory of emitted electrons, and a signal input unit 40 to which a video signal output from the photoelectric conversion element 10 is input. And.

詳細は後述するが、光電変換素子１０では、入射した光により正孔が発生し、入射光像に対応した正孔パターンが光電変換素子１０の電子放出部２０側に蓄積する。一方、電子放出部２０は、光電変換素子１０に対し、メッシュ電極３０を介して電子を放出する。光電変換素子１０に蓄積した正孔と、電子放出部２０から放出された電子とが結合すると、外部回路に電流が流れ、これを出力として取り出すことで、入射光像に応じた映像信号が得られる。信号入力部４０は、光電変換素子１０から入力した映像信号に基づいて、入射した光の光強度を算出する。そこで、まず、電子放出部２０について説明する。   Although details will be described later, in the photoelectric conversion element 10, holes are generated by the incident light, and a hole pattern corresponding to the incident light image is accumulated on the electron emission unit 20 side of the photoelectric conversion element 10. On the other hand, the electron emission unit 20 emits electrons to the photoelectric conversion element 10 through the mesh electrode 30. When the holes accumulated in the photoelectric conversion element 10 and the electrons emitted from the electron emission unit 20 are combined, a current flows in the external circuit, and this is taken out as an output to obtain a video signal corresponding to the incident light image. It is done. The signal input unit 40 calculates the light intensity of the incident light based on the video signal input from the photoelectric conversion element 10. First, the electron emission unit 20 will be described.

電子放出部２０は、熱電子源などを用いてもよいが、図２に示すように、冷陰極アレイ型のものを好適に用いることができる。電子放出部２０は、シリコン基板等で構成された電子放出基板２１と、電子放出基板２１上に作り込まれた駆動回路層（図示省略）と、駆動回路層上にマトリクス状に配置された複数（例えば６４０×４８０個）の電子源２２と、電子放出基板２１の周囲に形成された水平走査回路２３および垂直走査回路２４とを備えている。   The electron emission unit 20 may be a thermal electron source or the like, but a cold cathode array type can be suitably used as shown in FIG. The electron emission unit 20 includes an electron emission substrate 21 made of a silicon substrate, a drive circuit layer (not shown) formed on the electron emission substrate 21, and a plurality of elements arranged in a matrix on the drive circuit layer. (For example, 640 × 480) electron sources 22 and a horizontal scanning circuit 23 and a vertical scanning circuit 24 formed around the electron emission substrate 21.

各電子源２２は、図示省略したが、ＭＩＳ（Metal-Insulator-Semiconductor）型の冷陰極電子源で構成されており、下部電極や上部電極等を備え、上部電極に下部電極より高い電圧が印加されると、表面に複数（例えば３×３個）設けられたエミッションサイト２６（凹部）から電子が放出される。なお、下部電極は、電子源２２ごとに形成され、上部電極は全電子源２２共通である。   Although not shown, each electron source 22 is composed of a MIS (Metal-Insulator-Semiconductor) type cold cathode electron source, and includes a lower electrode and an upper electrode, and a higher voltage is applied to the upper electrode than the lower electrode. Then, electrons are emitted from the emission sites 26 (recesses) provided on the surface in a plurality (for example, 3 × 3). The lower electrode is formed for each electron source 22, and the upper electrode is common to all the electron sources 22.

駆動回路層は、ＭＯＳ（Metal-Oxide-Semiconductor）トランジスタで構成されており、そのドレイン電極は、下部電極に、ゲート電極およびソース電極は、水平走査回路２３および垂直走査回路２４にそれぞれ接続されている。上部電極に正電圧を印加すると共に、外部からのクロック信号や同期信号等に基づいて水平走査回路２３および垂直走査回路２４により各電子源２２のドレイン電位を制御することで、各電子源２２から順次、電子を放出させることができる。放出された電子は、メッシュ電極３０を介して光電変換素子１０側に引き出され、光電変換素子１０の電荷発生層１３（後述する）に到達する。   The drive circuit layer is formed of a MOS (Metal-Oxide-Semiconductor) transistor, the drain electrode is connected to the lower electrode, and the gate electrode and the source electrode are connected to the horizontal scanning circuit 23 and the vertical scanning circuit 24, respectively. Yes. A positive voltage is applied to the upper electrode, and the drain potential of each electron source 22 is controlled by the horizontal scanning circuit 23 and the vertical scanning circuit 24 based on an external clock signal, synchronization signal, etc. Sequentially, electrons can be emitted. The emitted electrons are drawn out to the photoelectric conversion element 10 side through the mesh electrode 30 and reach the charge generation layer 13 (described later) of the photoelectric conversion element 10.

次に、図１ないし図３を参照して、光電変換素子１０および光電変換素子１０から出力される映像信号について説明する。光電変換素子１０は、透光性基板１１と、透光性電極膜１２と、電荷発生層１３とが、光入射側からこの順で設けられている。さらに、光電変換素子１０は、透光性電極膜１２と電荷発生層１３との間に、波長変換層１４を備えている。なお、図２では、光電変換素子１０のうち透光性基板１１および透光性電極膜１２を省略して示している。   Next, with reference to FIG. 1 thru | or FIG. 3, the video signal output from the photoelectric conversion element 10 and the photoelectric conversion element 10 is demonstrated. In the photoelectric conversion element 10, a translucent substrate 11, a translucent electrode film 12, and a charge generation layer 13 are provided in this order from the light incident side. Further, the photoelectric conversion element 10 includes a wavelength conversion layer 14 between the translucent electrode film 12 and the charge generation layer 13. In FIG. 2, the translucent substrate 11 and the translucent electrode film 12 are omitted from the photoelectric conversion element 10.

透光性基板１１は、入射した光が透過する材料で構成されていればよく、撮像用途（光の波長）に応じて、ガラスや石英ガラスなどを適宜選択可能である。   The translucent substrate 11 only needs to be made of a material that allows incident light to pass therethrough, and glass, quartz glass, or the like can be selected as appropriate in accordance with an imaging application (light wavelength).

透光性電極膜１２は、図示省略した接続端子を介して所定の正電圧が印加され、電荷発生層１３に高電界（例えば１０8Ｖ／ｍ以上）を生じさせる。透光性電極膜１２は、入射した光が透過し且つ電気抵抗の低い材料で構成されていればよく、例えば、ＩＴＯ(Indium Tin Oxide）、ＩＺＯ（Indium Zinc Oxide）、ＡＺＯ（Aluminium doped Zinc Oxide）などを用いることができる。 A predetermined positive voltage is applied to the translucent electrode film 12 via a connection terminal (not shown), and a high electric field (for example, 10 8 V / m or more) is generated in the charge generation layer 13. The translucent electrode film 12 only needs to be made of a material that transmits incident light and has a low electrical resistance. For example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), and AZO (Aluminium doped Zinc Oxide). ) Etc. can be used.

電荷発生層１３では、入射光により電荷（電子・正孔対）が発生するものであれば特に限定されないが、感度を向上すべく、発生した正孔を増幅させる作用を有するものが好ましく、例えば、アバランシェ増倍が生じるアモルファスＳｅを好適に用いることができる。   The charge generation layer 13 is not particularly limited as long as charges (electron / hole pairs) are generated by incident light, but those having an action of amplifying the generated holes are preferable in order to improve sensitivity. Amorphous Se that causes avalanche multiplication can be preferably used.

電荷発生層１３に光が入射すると、透光性電極膜１２近傍の電荷発生層１３内に入射光の光強度（光量）に応じた電子・正孔対が発生する。このうち正孔は、透光性電極膜１２を介して印加された高電界により加速され、Ｓｅ原子との衝突イオン化を繰り返すことで増幅する（アバランシェ増倍）。これにより、電荷発生層１３の電子放出部２０側には、増幅した正孔が蓄積し、入射光像を反映した正孔パターンが形成される。そして、上記した各電子源２２から順次放出された電子と、各電子源２２に対応した領域に蓄積された正孔とが順次結合する。この結合時に外部回路に流れる電流を出力として取り出すことで、入射光像に対応した映像信号が得られ、信号入力部４０に出力される。つまり、入射光像に対応した映像信号が、電子源２２単位で出力される。   When light enters the charge generation layer 13, electron / hole pairs corresponding to the light intensity (light quantity) of the incident light are generated in the charge generation layer 13 in the vicinity of the translucent electrode film 12. Among these holes, holes are accelerated by a high electric field applied through the translucent electrode film 12, and are amplified by repeating collision ionization with Se atoms (avalanche multiplication). As a result, amplified holes are accumulated on the electron emission portion 20 side of the charge generation layer 13 and a hole pattern reflecting the incident light image is formed. The electrons sequentially emitted from each electron source 22 and the holes accumulated in the region corresponding to each electron source 22 are sequentially combined. By taking out the current flowing in the external circuit at the time of the coupling as an output, a video signal corresponding to the incident light image is obtained and output to the signal input unit 40. That is, a video signal corresponding to the incident light image is output in units of the electron source 22.

さらに、正孔と電子が結合する場所は、入射光の波長によって、電荷発生層１３の厚さ方向で相違しており（図３参照）、結合時に流れる電流は、入射光の波長別に時間差で外部に取り出される。このため、映像信号についても、波長別（色別）に得ることが可能である。すなわち、青色光Ｂの波長成分に対応した映像信号と、緑色光Ｇの波長成分に対応した映像信号と、赤色光Ｒの波長成分に対応した映像信号とを、別々に得ることができる（ただし、後述するように、電荷発生層１３がアモルファスＳｅで構成されている場合には、赤色光Ｒに対する感度が低くなっている）。   Furthermore, the place where holes and electrons are combined differs depending on the wavelength of the incident light in the thickness direction of the charge generation layer 13 (see FIG. 3), and the current flowing at the time of coupling varies depending on the wavelength of the incident light. Take out to the outside. For this reason, it is possible to obtain video signals by wavelength (by color). That is, a video signal corresponding to the wavelength component of blue light B, a video signal corresponding to the wavelength component of green light G, and a video signal corresponding to the wavelength component of red light R can be obtained separately (however, As will be described later, when the charge generation layer 13 is made of amorphous Se, the sensitivity to the red light R is low).

なお、電荷発生層１３に各種特性を付与するために、アモルファスＳｅに各種添加物を添加してもよく、例えば、アモルファスＳｅの熱的安定性を向上させるために、Ａｓ（ヒ素）などを添加してもよく、電荷発生層１３内の電界を制御するために、フッ化物などを添加してもよい。各種添加物については、電荷発生層１３内で均一に含有されている必要はなく、膜厚方向に対して組成の分布が発生していてもよい。   Note that various additives may be added to the amorphous Se in order to impart various characteristics to the charge generation layer 13. For example, As (arsenic) is added to improve the thermal stability of the amorphous Se. Alternatively, fluoride or the like may be added to control the electric field in the charge generation layer 13. The various additives need not be contained uniformly in the charge generation layer 13, and the composition distribution may occur in the film thickness direction.

さらに、電荷発生層１３は、アモルファスＳｅを主体とした層のほかに、各種機能を有する、他の材料で構成された層を有していてもよい。例えば、暗電流（ノイズ）の原因となる、外部から電荷発生層１３への正孔や電子の注入を阻止すべく、電荷発生層１３の透光性電極膜１２側に、ＣｅＯ2（酸化セリウム）などで構成された正孔注入阻止層を設けてもよく、電荷発生層１３の電子放出部２０側に、Ｓｂ2Ｓ3（硫化アンチモン）などで構成された電子注入阻止層を設けてもよい。 Furthermore, the charge generation layer 13 may have a layer made of other materials having various functions in addition to a layer mainly composed of amorphous Se. For example, CeO 2 (cerium oxide) is formed on the translucent electrode film 12 side of the charge generation layer 13 in order to prevent the injection of holes and electrons from the outside to the charge generation layer 13 which causes dark current (noise). May be provided, or an electron injection blocking layer formed of Sb 2 S 3 (antimony sulfide) or the like may be provided on the electron emission portion 20 side of the charge generation layer 13. Good.

ここで、アモルファスＳｅは、上述したように高電界下でアバランシェ増倍を引き起こすが、他方、バンドギャップが約２．０ｅＶであるため、４００ｎｍ付近に光電変換効率のピークがあり、波長６２０ｎｍ以上の光に対してはほとんど光電変換が行われない。このため、電荷発生層１３に緑色光Ｇや青色光Ｂが入射すると、正孔が蓄積するが、電荷発生層１３に赤色光Ｒが入射しても、正孔がほとんど蓄積しない。そこで、光電変換素子１０は、入射した光のうち、６５０ｎｍ付近（赤色光Ｒ）の波長成分を４００ｎｍ付近（青色光Ｂ）の波長に波長変換（アップコンバージョン）する波長変換層１４を備えている。   Here, amorphous Se causes avalanche multiplication under a high electric field as described above. On the other hand, since the band gap is about 2.0 eV, there is a peak of photoelectric conversion efficiency in the vicinity of 400 nm, and a wavelength of 620 nm or more. Almost no photoelectric conversion is performed on the light. For this reason, when green light G or blue light B is incident on the charge generation layer 13, holes are accumulated. However, even if red light R is incident on the charge generation layer 13, almost no holes are accumulated. Therefore, the photoelectric conversion element 10 includes a wavelength conversion layer 14 that converts (up-converts) the wavelength component in the vicinity of 650 nm (red light R) to the wavelength in the vicinity of 400 nm (blue light B) in the incident light. .

波長変換層１４は、光の入射側から見て、入射した光を波長変換して電荷発生層１３に入射させる波長変換領域１４ａと、入射した光を波長変換せずに電荷発生層１３に入射させる非波長変換領域１４ｂとが、Ｘ方向に交互に並んだストライプ状に区分されている（図２および図３では、波長変換領域１４ａを塗り潰しアリ、非波長変換領域１４ｂを塗り潰しナシで示している）。波長変換領域１４ａに入射した光の各波長成分「赤色光Ｒ、緑色光Ｇ、青色光Ｂ」は、「青色光Ｂ、緑色光Ｇ、青色光Ｂ」として電荷発生層１３に入射する。一方、非波長変換領域１４ｂに入射した光の各波長成分「赤色光Ｒ、緑色光Ｇ、青色光Ｂ」は、波長変換されずに「赤色光Ｒ、緑色光Ｇ、青色光Ｂ」のまま電荷発生層１３に入射する（図３参照）。   When viewed from the light incident side, the wavelength conversion layer 14 converts the wavelength of incident light into the charge generation layer 13 by wavelength conversion, and enters the charge generation layer 13 without converting the wavelength of the incident light. The non-wavelength conversion region 14b to be formed is divided into stripes alternately arranged in the X direction (in FIGS. 2 and 3, the wavelength conversion region 14a is filled with ants, and the non-wavelength conversion region 14b is filled with pears. ) Each wavelength component “red light R, green light G, blue light B” of the light incident on the wavelength conversion region 14 a enters the charge generation layer 13 as “blue light B, green light G, blue light B”. On the other hand, each wavelength component “red light R, green light G, blue light B” of the light incident on the non-wavelength conversion region 14b remains “red light R, green light G, blue light B” without wavelength conversion. It enters the charge generation layer 13 (see FIG. 3).

波長変換領域１４ａは、赤色光Ｒの波長成分を青色光Ｂの波長に波長変換するものであれば、特に限定されるものではなく、例えば、ナノスケールの凹凸を有する材料（色素分子の微結晶群等）に励起光を照射することで生じるフォノン援用過程を利用した波長変換素子、量子ドットから構成される波長変換素子、蛍光体等の波長変換材料を含む波長変換素子、およびカラーフィルターなどを利用可能である。一方、非波長変換領域１４ｂは、入射光を波長変換することなく電荷発生層１３に入射させる透光性の材料で構成してもよく、空間により構成してもよい。   The wavelength conversion region 14a is not particularly limited as long as the wavelength component of the red light R is converted into the wavelength of the blue light B. For example, the wavelength conversion region 14a is a material having nanoscale unevenness (a microcrystal of a dye molecule). A wavelength conversion element utilizing a phonon-assisted process generated by irradiating excitation light to a group, a wavelength conversion element composed of quantum dots, a wavelength conversion element including a wavelength conversion material such as a phosphor, and a color filter. Is available. On the other hand, the non-wavelength conversion region 14b may be formed of a light-transmitting material that allows incident light to enter the charge generation layer 13 without wavelength conversion, or may be formed of a space.

さらに、電子放出部２０においてマトリクス状に配置された複数の電子源２２は、波長変換領域１４ａに対応した電子源２２（波長変換対応電子源２２ａ）と、非波長変換領域１４ｂに対応した電子源２２（非波長変換対応電子源２２ｂ）とに、ストライプ状に区分される（図２および図３では、波長変換対応電子源２２ａを塗り潰しアリ、非波長変換対応電子源２２ｂを塗り潰しナシで示している）。すなわち、波長変換領域１４ａに入射した光によって蓄積した正孔と、波長変換対応電子源２２ａから放出された電子とが結合し、非波長変換領域１４ｂに入射した光によって蓄積した正孔と、非波長変換対応電子源２２ｂから放出された電子とが結合する。このように、波長変換領域１４ａと非波長変換領域１４ｂとが、異なる電子源２２に対応している。そして、上述したように、映像信号が電子源２２単位で出力されることから、波長変換領域１４ａに光が入射して得られる映像信号（波長変換領域１４ａの映像信号）と、非波長変換領域１４ｂに光が入射して得られる映像信号（非波長変換領域１４ｂの映像信号）とが、別々に出力されることになる。   Further, the plurality of electron sources 22 arranged in a matrix in the electron emission unit 20 include an electron source 22 corresponding to the wavelength conversion region 14a (wavelength conversion corresponding electron source 22a) and an electron source corresponding to the non-wavelength conversion region 14b. 22 (non-wavelength conversion compatible electron source 22b) is divided into stripes (in FIGS. 2 and 3, the wavelength conversion compatible electron source 22a is filled with ants, and the non-wavelength conversion compatible electron source 22b is filled with pears. ) That is, the holes accumulated by the light incident on the wavelength conversion region 14a and the electrons emitted from the wavelength conversion compatible electron source 22a are combined, and the holes accumulated by the light incident on the non-wavelength conversion region 14b The electrons emitted from the wavelength conversion compatible electron source 22b are combined. As described above, the wavelength conversion region 14 a and the non-wavelength conversion region 14 b correspond to different electron sources 22. As described above, since the video signal is output in units of the electron source 22, the video signal (video signal in the wavelength conversion region 14 a) obtained when light enters the wavelength conversion region 14 a and the non-wavelength conversion region The video signal (video signal in the non-wavelength conversion region 14b) obtained by the light incident on 14b is output separately.

なお、本実施形態では、波長変換対応電子源２２ａと波長変換対応電子源２２ａとが、Ｘ方向に１列ずつ交互に並ぶように、波長変換層１４（波長変換領域１４ａおよび非波長変換領域１４ｂ）が構成されているが、波長変換対応電子源２２ａと波長変換対応電子源２２ａとが、複数列ごとに交互に並ぶように波長変換層１４を構成してもよく、Ｙ方向に交互に並ぶように波長変換層１４を構成してもよい。   In the present embodiment, the wavelength conversion layer 14 (the wavelength conversion region 14a and the non-wavelength conversion region 14b is arranged so that the wavelength conversion-compatible electron sources 22a and the wavelength conversion-compatible electron sources 22a are alternately arranged in a line in the X direction. However, the wavelength conversion layer 14 may be configured such that the wavelength conversion-compatible electron sources 22a and the wavelength conversion-compatible electron sources 22a are alternately arranged in a plurality of rows, and are alternately arranged in the Y direction. The wavelength conversion layer 14 may be configured as described above.

ここで、図３に示すように、波長変換領域１４ａに入射した光の波長成分「赤色光Ｒ、緑色光Ｇ、青色光Ｂ」は、赤色光Ｒが波長変換され、「青色光Ｂ、緑色光Ｇ、青色光Ｂ」となって電荷発生層１３に入射する。このため、電荷発生層１３では、波長変換されて光電変換効率の高い青色光Ｂの波長となった赤色光Ｒの波長成分の光強度と、緑色光Ｇの波長成分の光強度と、青色光Ｂの波長成分の光強度とに応じた量の正孔が蓄積する。この正孔と電子とが結合することで、青色光Ｂの波長成分の光強度および青色光Ｂに波長変換された赤色光Ｒの波長成分の光強度を反映した映像信号（青色映像信号）と、緑色光Ｇの波長成分の光強度を反映した映像信号（緑色映像信号）とが、上述したように別々に出力される。したがって、波長変換領域１４ａに光が入射すると、青色光Ｂの波長成分の光強度および青色光Ｂに波長変換された赤色光Ｒの波長成分の光強度を反映した青色映像信号と、緑色光Ｇの波長成分の光強度を反映した緑色映像信号とが得られる。   Here, as shown in FIG. 3, the wavelength components “red light R, green light G, and blue light B” of the light incident on the wavelength conversion region 14 a are wavelength-converted with the red light R and “blue light B, green light”. Light G and blue light B ”enter the charge generation layer 13. For this reason, in the charge generation layer 13, the light intensity of the wavelength component of the red light R, the light intensity of the wavelength component of the green light G, and the blue light converted to the wavelength of the blue light B having high photoelectric conversion efficiency. An amount of holes corresponding to the light intensity of the B wavelength component accumulates. By combining these holes and electrons, a video signal (blue video signal) reflecting the light intensity of the wavelength component of the blue light B and the light component of the wavelength component of the red light R converted into the blue light B, and The video signal (green video signal) reflecting the light intensity of the wavelength component of the green light G is output separately as described above. Accordingly, when light enters the wavelength conversion region 14a, a blue video signal reflecting the light intensity of the wavelength component of the blue light B and the light intensity of the wavelength component of the red light R converted into the blue light B, and the green light G And a green video signal reflecting the light intensity of the wavelength component of.

一方、非波長変換領域１４ｂに入射した光の波長成分「赤色光Ｒ、緑色光Ｇ、青色光Ｂ」は、赤色光Ｒが波長変換されることなく、「赤色光Ｒ、緑色光Ｇ、青色光Ｂ」のまま電荷発生層１３に入射する。このため、電荷発生層１３では、緑色光Ｇの波長成分の光強度と、青色光Ｂの波長成分の光強度とに応じた量の正孔が蓄積する。この正孔と電子とが結合することで、青色光Ｂの波長成分の光強度を反映した映像信号（青色映像信号）と、緑色光Ｇの波長成分の光強度を反映した映像信号（緑色映像信号）とが、上述したように別々に出力される。したがって、波長変換領域１４ａに光が入射すると、青色光Ｂの波長成分の光強度を反映した青色映像信号と、緑色光Ｇの波長成分の光強度を反映した緑色映像信号とが得られる。   On the other hand, the wavelength components “red light R, green light G, and blue light B” of the light incident on the non-wavelength conversion region 14 b are “red light R, green light G, blue, without wavelength conversion of the red light R”. The light B is incident on the charge generation layer 13 as it is. For this reason, the charge generation layer 13 accumulates an amount of holes corresponding to the light intensity of the wavelength component of the green light G and the light intensity of the wavelength component of the blue light B. By combining these holes and electrons, a video signal (blue video signal) reflecting the light intensity of the wavelength component of blue light B and a video signal (green video) reflecting the light intensity of the wavelength component of green light G are combined. Signal) is output separately as described above. Accordingly, when light enters the wavelength conversion region 14a, a blue video signal reflecting the light intensity of the wavelength component of the blue light B and a green video signal reflecting the light intensity of the wavelength component of the green light G are obtained.

信号入力部４０は、波長変換領域１４ａの青色映像信号と、非波長変換領域１４ｂの青色映像信号との差分により、赤色光Ｒの波長成分の光強度を算出する。すなわち、上述したように、前者の波長変換領域１４ａの青色映像信号には、青色光Ｂの波長成分の光強度および赤色光Ｒの波長成分の光強度が反映されている。これに対し、後者の非波長変換領域１４ｂの青色映像信号には、青色光Ｂの波長成分の光強度が反映されている。したがって、この両青色映像信号の差分により、赤色光Ｒの波長成分の光強度を算出することができる。   The signal input unit 40 calculates the light intensity of the wavelength component of the red light R based on the difference between the blue video signal in the wavelength conversion region 14a and the blue video signal in the non-wavelength conversion region 14b. That is, as described above, the light intensity of the wavelength component of the blue light B and the light intensity of the wavelength component of the red light R are reflected in the blue video signal in the former wavelength conversion region 14a. On the other hand, the light intensity of the wavelength component of the blue light B is reflected in the blue video signal in the latter non-wavelength conversion region 14b. Therefore, the light intensity of the wavelength component of the red light R can be calculated from the difference between the both blue video signals.

さらに、非波長変換領域１４ｂの青色映像信号に基づいて、青色光Ｂの波長成分の光強度を得ることができ、非波長変換領域１４ｂ（或いは波長変換領域１４ａ）の緑色映像信号に基づいて、緑色光Ｇの波長成分の光強度を得ることができる。   Further, based on the blue video signal in the non-wavelength conversion region 14b, the light intensity of the wavelength component of the blue light B can be obtained, and on the basis of the green video signal in the non-wavelength conversion region 14b (or the wavelength conversion region 14a), The light intensity of the wavelength component of the green light G can be obtained.

したがって、一定領域ごとに、例えば、波長変換対応電子源２２ａとこれに隣接する非波長変換対応電子源２２ｂとを１つの画素Ｐとし、１画素Ｐごとに、波長変換領域１４ａの映像信号と、非波長変換領域１４ｂの映像信号との差分を算出することで、青色光Ｂの波長成分の光強度および緑色光Ｇの波長成分の光強度に加え、赤色光Ｒの波長成分の光強度を得ることができる。そして、これらに基づいて、撮像対象物のカラーイメージデータを構成することができる。   Therefore, for each fixed region, for example, the wavelength conversion-compatible electron source 22a and the non-wavelength conversion-compatible electron source 22b adjacent thereto are defined as one pixel P, and for each pixel P, a video signal in the wavelength conversion region 14a, By calculating the difference from the video signal in the non-wavelength conversion region 14b, in addition to the light intensity of the wavelength component of the blue light B and the light intensity of the wavelength component of the green light G, the light intensity of the wavelength component of the red light R is obtained. be able to. And based on these, the color image data of an imaging target object can be comprised.

なお、本実施形態では、波長変換層１４として、赤色光Ｒの波長成分を青色光Ｂに波長変換するものを用いたが、これに限定されるものではない。例えば、近赤外光の波長成分の光強度を反映した映像信号を得たい場合であって、電荷発生層１３を構成する材料が、青色光Ｂから赤色光Ｒまでは光電変換効率が高いものの、近赤外光では光電変換効率が低い場合には、波長変換層１４として、近赤外光の波長成分を赤色光Ｒに波長変換するものを用いればよい。その他、Ｘ線、紫外線等、各種の波長領域に適用可能である。この場合、上記のフォノン援用過程を利用した波長変換素子については、ナノスケールの凹凸の大きさ（近接場光が最も多く発生する波長）を最適化することで、どの波長域を波長変換するかを制御することができる。また、ナノスケールの凹凸を持つ材料（吸収端波長）を選択することで、どの波長域に波長変換するかを制御することができる。   In the present embodiment, the wavelength conversion layer 14 that converts the wavelength component of the red light R into the blue light B is used, but is not limited thereto. For example, when it is desired to obtain a video signal that reflects the light intensity of the wavelength component of near-infrared light, the material constituting the charge generation layer 13 has high photoelectric conversion efficiency from blue light B to red light R. When the photoelectric conversion efficiency is low with near infrared light, the wavelength conversion layer 14 may be one that converts the wavelength component of near infrared light into red light R. In addition, the present invention can be applied to various wavelength regions such as X-rays and ultraviolet rays. In this case, for the wavelength conversion element using the above-mentioned phonon-assisted process, which wavelength range should be converted by optimizing the size of the nanoscale unevenness (the wavelength at which the most near-field light is generated) Can be controlled. In addition, by selecting a material having nanoscale unevenness (absorption edge wavelength), it is possible to control which wavelength range the wavelength conversion is performed.

続いて、撮像素子１の他の実施形態について説明する。他の実施形態では、上記した第１実施形態と異なる部分を中心に説明する。同様の構成部分については同じ符号を付し、詳細な説明を省略する。   Next, another embodiment of the image sensor 1 will be described. In other embodiments, a description will be given centering on differences from the first embodiment. Similar components are denoted by the same reference numerals, and detailed description thereof is omitted.

第２ないし第４実施形態の撮像素子１は、光電変換素子１０における波長変換層１４の位置が、第１実施形態と異なっている。
図４に示すように、第２実施形態に係る光電変換素子１０は、光入射側から、波長変換層１４、透光性基板１１、透光性電極膜１２および電荷発生層１３が、この順に設けられている。すなわち、波長変換層１４を、透光性基板１１の光入射側に設けたものである。 In the imaging device 1 of the second to fourth embodiments, the position of the wavelength conversion layer 14 in the photoelectric conversion device 10 is different from that of the first embodiment.
As shown in FIG. 4, the photoelectric conversion element 10 according to the second embodiment includes a wavelength conversion layer 14, a light transmissive substrate 11, a light transmissive electrode film 12, and a charge generation layer 13 in this order from the light incident side. Is provided. That is, the wavelength conversion layer 14 is provided on the light incident side of the translucent substrate 11.

図５に示すように、第３実施形態に係る光電変換素子１０は、光入射側から、透光性基板１１、波長変換層１４、透光性電極膜１２および電荷発生層１３が、この順に設けられている。すなわち、波長変換層１４を、透光性基板１１と透光性電極膜１２との間に設けたものである。   As shown in FIG. 5, the photoelectric conversion element 10 according to the third embodiment includes a light transmissive substrate 11, a wavelength conversion layer 14, a light transmissive electrode film 12, and a charge generation layer 13 in this order from the light incident side. Is provided. That is, the wavelength conversion layer 14 is provided between the translucent substrate 11 and the translucent electrode film 12.

図６に示すように、第４実施形態に係る光電変換素子１０は、光入射側から、透光性基板１１、透光性電極膜１２および電荷発生層１３が、この順に設けられると共に、波長変換層１４を、電荷発生層１３の中に設けたものである。この第４実施形態の光電変換素子１０においても、電荷発生層１３のうち、波長変換層１４よりも電子放出部２０側の領域には、波長変換層１４で波長変換された光が入射するため、第１実施形態の光電変換素子１０と同等の効果を得ることができる。   As shown in FIG. 6, the photoelectric conversion element 10 according to the fourth embodiment is provided with a translucent substrate 11, a translucent electrode film 12, and a charge generation layer 13 in this order from the light incident side. The conversion layer 14 is provided in the charge generation layer 13. Also in the photoelectric conversion element 10 according to the fourth embodiment, light that has been wavelength-converted by the wavelength conversion layer 14 is incident on a region of the charge generation layer 13 that is closer to the electron emission unit 20 than the wavelength conversion layer 14. The effect equivalent to that of the photoelectric conversion element 10 of the first embodiment can be obtained.

次に、第５実施形態の撮像素子１は、波長変換層１４における波長変換領域１４ａと非波長変換領域１４ｂとの区分の仕方が、第１実施形態と異なっている。
図７に示すように、第５実施形態に係る光電変換素子１０は、波長変換層１４が、光の入射側から見て、波長変換領域１４ａと、非波長変換領域１４ｂとに、ドット状に区分されている点で、両領域がストライプ状に区分された第１実施形態と異なっている（図７では、波長変換領域１４ａを塗り潰しアリ、非波長変換領域１４ｂを塗り潰しナシで示している）。この場合、電子放出部２０においてマトリクス状に配置された複数の電子源２２は、波長変換対応電子源２２ａと、波長変換対応電子源２２ａとに、ドット状に区分される（図７では、波長変換対応電子源２２ａを塗り潰しアリ、非波長変換対応電子源２２ｂを塗り潰しナシで示している）。すなわち、波長変換領域１４ａと非波長変換領域１４ｂとが、異なる電子源２２に対応している。このため、第１実施形態の光電変換素子１０と同様に、波長変換領域１４ａの映像信号と、非波長変換領域１４ｂの映像信号とが別々に出力される。 Next, the imaging device 1 of the fifth embodiment is different from the first embodiment in the way of dividing the wavelength conversion region 14a and the non-wavelength conversion region 14b in the wavelength conversion layer 14.
As illustrated in FIG. 7, in the photoelectric conversion element 10 according to the fifth embodiment, the wavelength conversion layer 14 is dot-shaped in the wavelength conversion region 14 a and the non-wavelength conversion region 14 b as viewed from the light incident side. It is different from the first embodiment in which both areas are divided into stripes in the point of division (in FIG. 7, the wavelength conversion area 14a is filled with ants, and the non-wavelength conversion area 14b is filled with pears). . In this case, the plurality of electron sources 22 arranged in a matrix in the electron emission unit 20 are divided into a wavelength conversion compatible electron source 22a and a wavelength conversion compatible electron source 22a (in FIG. 7, in FIG. The conversion-compatible electron source 22a is filled with ants, and the non-wavelength conversion-compatible electron source 22b is filled with pears). That is, the wavelength conversion region 14 a and the non-wavelength conversion region 14 b correspond to different electron sources 22. For this reason, like the photoelectric conversion element 10 of 1st Embodiment, the video signal of the wavelength conversion area | region 14a and the video signal of the non-wavelength conversion area | region 14b are output separately.

なお、図７に示したように、「ドット状」とは、波長変換領域１４ａおよび非波長変換領域１４ｂがチェック柄状（市松模様状）となっている場合を含む概念である。もちろん、波長変換領域１４ａおよび非波長変換領域１４ｂの一方が「地」で他方が「ドット（円形）」となっている場合であってもよい。また、図７では、波長変換層１４における１つのドット（波長変換領域１４ａ或いは非波長変換領域１４ｂ）が、電子放出部２０における１つの電子源２２と対応しているが、波長変換層１４における１つのドットが、複数の電子源２２と対応するように、波長変換層１４を構成してもよい。   As shown in FIG. 7, the “dot shape” is a concept including a case where the wavelength conversion region 14 a and the non-wavelength conversion region 14 b are in a check pattern (checkered pattern). Of course, one of the wavelength conversion region 14a and the non-wavelength conversion region 14b may be “ground” and the other may be “dot (circular)”. In FIG. 7, one dot (wavelength conversion region 14 a or non-wavelength conversion region 14 b) in the wavelength conversion layer 14 corresponds to one electron source 22 in the electron emission unit 20. The wavelength conversion layer 14 may be configured so that one dot corresponds to the plurality of electron sources 22.

続いて、図８を参照して、第６実施形態に係る撮像素子１を備えた撮像装置の一実施形態について説明する。本実施形態に係る撮像装置１００は、撮像素子１と、撮像素子１とは異なる構成の非波長変換撮像素子１０１と、撮像対象となる物体からの光を、２つの分岐光に分光して撮像素子１と非波長変換撮像素子１０１とに入射させる分光素子１０２（例えばビームスプリッター）とを備えている。   Next, with reference to FIG. 8, an embodiment of an imaging device including the imaging device 1 according to the sixth embodiment will be described. The imaging apparatus 100 according to the present embodiment captures an image by separating the image sensor 1, a non-wavelength conversion image sensor 101 having a configuration different from the image sensor 1, and light from an object to be imaged into two branched lights. A spectroscopic element 102 (for example, a beam splitter) that enters the element 1 and the non-wavelength conversion imaging element 101 is provided.

第６実施形態の撮像素子１は、第１実施形態では、映像信号を波長別に得るようにしていたのに対し、かかる構成を備えていないものである。すなわち、第６実施形態では、波長変換領域１４ａに光が入射すると、青色光Ｂの波長成分の光強度、青色光Ｂに波長変換された赤色光Ｒの波長成分の光強度、および緑色光Ｇの波長成分の光強度を反映した映像信号が得られる。   In the first embodiment, the image pickup device 1 according to the sixth embodiment does not have such a configuration, whereas the image signal is obtained for each wavelength in the first embodiment. That is, in the sixth embodiment, when light enters the wavelength conversion region 14a, the light intensity of the wavelength component of the blue light B, the light intensity of the wavelength component of the red light R converted into the blue light B, and the green light G A video signal reflecting the light intensity of the wavelength component is obtained.

非波長変換撮像素子１０１は、撮像素子１と略同様に構成されているが、波長変換層１４に代えて、青色光Ｂのみを透過する波長選択素子１０４（例えばダイクロイックフィルター）を備えたものである。つまり、非波長変換撮像素子１０１の電荷発生層１３には、分岐光のうち青色光Ｂのみが入射する。   The non-wavelength conversion image pickup device 101 is configured in substantially the same manner as the image pickup device 1, but includes a wavelength selection device 104 (for example, a dichroic filter) that transmits only the blue light B instead of the wavelength conversion layer 14. is there. That is, only the blue light B out of the branched light is incident on the charge generation layer 13 of the non-wavelength conversion imaging element 101.

第６実施形態の撮像素子１においては、上述したように、波長変換領域１４ａに分岐光が入射すると、青色光Ｂの波長成分の光強度、赤色光Ｒの波長成分の光強度、および緑色光Ｇの波長成分の光強度を反映した映像信号が得られる。一方、非波長変換領域１４ｂに分岐光が入射すると、青色光Ｂの波長成分の光強度、および緑色光Ｇの波長成分の光強度を反映した映像信号が得られる。さらに、非波長変換撮像素子１０１に分岐光が入射すると、青色光Ｂの波長成分の光強度を反映した映像信号が得られる。   In the imaging device 1 of the sixth embodiment, as described above, when the branched light enters the wavelength conversion region 14a, the light intensity of the wavelength component of the blue light B, the light intensity of the wavelength component of the red light R, and the green light A video signal reflecting the light intensity of the G wavelength component is obtained. On the other hand, when the branched light is incident on the non-wavelength conversion region 14b, a video signal reflecting the light intensity of the wavelength component of the blue light B and the light intensity of the wavelength component of the green light G is obtained. Further, when the branched light is incident on the non-wavelength conversion imaging device 101, a video signal reflecting the light intensity of the wavelength component of the blue light B is obtained.

そのため、波長変換領域１４ａの映像信号と、非波長変換領域１４ｂの映像信号との差分により、赤色光Ｒの波長成分の光強度を算出することができる。これに加え、非波長変換領域１４ｂの映像信号と、非波長変換撮像素子１０１の映像信号との差分により、緑色光Ｇの波長成分の光強度を算出することができる。   Therefore, the light intensity of the wavelength component of the red light R can be calculated from the difference between the video signal in the wavelength conversion region 14a and the video signal in the non-wavelength conversion region 14b. In addition, the light intensity of the wavelength component of the green light G can be calculated from the difference between the video signal in the non-wavelength conversion region 14b and the video signal from the non-wavelength conversion image sensor 101.

したがって、一定領域ごとに、例えば、撮像素子１の波長変換対応電子源２２ａおよびこれに隣接する非波長変換対応電子源２２ｂと、非波長変換撮像素子１０１においてこれらに対応する位置に配置された電子源２２とを１つの画素Ｐとし、１画素Ｐごとに、波長変換領域１４ａの映像信号と非波長変換領域１４ｂの映像信号との差分を算出すると共に、非波長変換領域１４ｂの映像信号と非波長変換撮像素子１０１の映像信号との差分を算出することで、青色光Ｂの波長成分の光強度、緑色光Ｇの波長成分の光強度および赤色光Ｒの波長成分の光強度を得ることができる。そして、これらに基づいて、撮像対象物のカラーイメージデータを構成することができる。   Therefore, for each fixed region, for example, the wavelength conversion-compatible electron source 22a of the image sensor 1, the non-wavelength conversion-compatible electron source 22b adjacent thereto, and the non-wavelength conversion image sensor 101 arranged at positions corresponding to them. The source 22 is defined as one pixel P, and for each pixel P, the difference between the video signal in the wavelength conversion region 14a and the video signal in the non-wavelength conversion region 14b is calculated, and the video signal in the non-wavelength conversion region 14b By calculating the difference from the video signal of the wavelength conversion imaging device 101, the light intensity of the wavelength component of the blue light B, the light intensity of the wavelength component of the green light G, and the light intensity of the wavelength component of the red light R can be obtained. it can. And based on these, the color image data of an imaging target object can be comprised.

なお、本実施形態では、波長選択素子１０４を、非波長変換撮像素子１０１に設けたが、これを撮像素子１に設けるようにしてもよい。すなわち、撮像素子１において、波長変換領域１４ａと、非波長変換領域１４ｂと、波長選択素子１０４とが、異なる電子源２２に対応するように、これらを例えばストライプ状やドット状に配置してもよい。これにより、単一の撮像素子１でカラーイメージデータを構成することができる。   In the present embodiment, the wavelength selection element 104 is provided in the non-wavelength conversion imaging element 101, but it may be provided in the imaging element 1. That is, in the imaging device 1, the wavelength conversion region 14a, the non-wavelength conversion region 14b, and the wavelength selection device 104 may be arranged in, for example, a stripe shape or a dot shape so as to correspond to different electron sources 22. Good. Thereby, color image data can be comprised with the single image pick-up element 1. FIG.

以上のように、第１実施形態ないし第６実施形態の光電変換素子１０およびこれを備えた撮像素子１によれば、波長変換層１４を、波長変換領域１４ａと非波長変換領域１４ｂとに区分したことで、電荷発生層１３における光電変換効率の低い波長成分（赤色光Ｒ）についても、その光強度を求めることができる。すなわち、波長変換領域１４ａに入射した光に基づいて得られる映像信号（光電変換効率の低い波長成分の光強度を反映）と、非波長変換領域１４ｂに入射した光に基づいて得られる映像信号（光電変換効率の低い波長成分の光強度を反映していない）との差分により、光電変換効率の低い波長成分（赤色光Ｒ）の光強度を算出することができる。   As described above, according to the photoelectric conversion element 10 of the first embodiment to the sixth embodiment and the imaging element 1 including the photoelectric conversion element 10, the wavelength conversion layer 14 is divided into the wavelength conversion region 14a and the non-wavelength conversion region 14b. As a result, the light intensity of the wavelength component (red light R) having a low photoelectric conversion efficiency in the charge generation layer 13 can also be obtained. That is, a video signal obtained based on light incident on the wavelength conversion region 14a (reflecting light intensity of a wavelength component having a low photoelectric conversion efficiency) and a video signal obtained based on light incident on the non-wavelength conversion region 14b ( The light intensity of the wavelength component with low photoelectric conversion efficiency (red light R) can be calculated from the difference from the light intensity of the wavelength component with low photoelectric conversion efficiency.

なお、以上の第１実施形態ないし第６実施形態では、電荷発生層１３における光電変換効率の低い波長成分の光強度を得るべく、波長変換層１４として、光電変換効率の低い波長成分を光電変換効率の高い波長に波長変換して電荷発生層１３に入射させる波長変換領域１４ａを有するものを用いたが、これに限定されるものではない。例えば、電荷発生層１３が、広範囲の波長領域（例えば赤色〜青色）に亘って適度な光電変換効率を有している場合でも、波長成分ごとに映像信号が得られないために、各波長成分（各色）の光強度を求めることができない場合には、波長変換層１４として、ある波長成分（例えば青色光Ｂ）を光電変換効率の低い他の波長（例えば紫外線）に波長変換して電荷発生層１３に入射させる波長変換領域１４ａを有するものを用いればよい。この場合も、波長変換領域１４ａに入射した光に基づいて得られる映像信号（青色光Ｂの波長成分の光強度を反映していない）と、非波長変換領域１４ｂに入射した光に基づいて得られる映像信号（青色光Ｂの波長成分の光強度を反映）との差分により、青色光Ｂの光強度を算出することができる。   In the first to sixth embodiments described above, in order to obtain the light intensity of the wavelength component having low photoelectric conversion efficiency in the charge generation layer 13, the wavelength conversion layer 14 is used to convert the wavelength component having low photoelectric conversion efficiency. Although the one having the wavelength conversion region 14a that is wavelength-converted to a highly efficient wavelength and is incident on the charge generation layer 13 is used, the present invention is not limited to this. For example, even when the charge generation layer 13 has an appropriate photoelectric conversion efficiency over a wide wavelength range (for example, red to blue), an image signal cannot be obtained for each wavelength component. When the light intensity of each color cannot be obtained, the wavelength conversion layer 14 generates a charge by converting a wavelength component (for example, blue light B) into another wavelength (for example, ultraviolet light) having a low photoelectric conversion efficiency. What has the wavelength conversion area | region 14a entered into the layer 13 should just be used. Also in this case, the image signal obtained based on the light incident on the wavelength conversion region 14a (not reflecting the light intensity of the wavelength component of the blue light B) and the light incident on the non-wavelength conversion region 14b are obtained. The light intensity of the blue light B can be calculated based on the difference from the video signal (reflecting the light intensity of the wavelength component of the blue light B).

１：撮像素子、１０：光電変換素子、１３：電荷発生層、１４：波長変換層、１４ａ：波長変換領域、１４ｂ：非波長変換領域、２０：電子放出部、１００：撮像装置   1: imaging device, 10: photoelectric conversion device, 13: charge generation layer, 14: wavelength conversion layer, 14a: wavelength conversion region, 14b: non-wavelength conversion region, 20: electron emission unit, 100: imaging device

Claims (10)

入射した光により電荷が発生する電荷発生層と、
前記光のうち少なくとも一部の波長成分を波長変換する波長変換層と、を備え、
前記波長変換層は、前記光の入射側から見て、
前記光のうち少なくとも一部の波長成分を波長変換して、前記電荷発生層に入射させる波長変換領域と、
前記光を、波長変換せずに、前記電荷発生層に入射させる非波長変換領域と、
に区分されていることを特徴とする光電変換素子。 A charge generation layer in which charges are generated by incident light;
A wavelength conversion layer for wavelength-converting at least a part of the wavelength components of the light, and
The wavelength conversion layer is viewed from the light incident side,
A wavelength conversion region for wavelength-converting at least a part of the wavelength component of the light and entering the charge generation layer;
A non-wavelength conversion region in which the light is incident on the charge generation layer without wavelength conversion;
A photoelectric conversion element characterized by being classified into: 前記波長変換層は、前記波長変換領域と前記非波長変換領域とが、前記光の入射側から見て、ストライプ状およびドット状のいずれかに区分されていることを特徴とする請求項１に記載の光電変換素子。   2. The wavelength conversion layer according to claim 1, wherein the wavelength conversion region and the non-wavelength conversion region are divided into either a stripe shape or a dot shape when viewed from the light incident side. The photoelectric conversion element as described. 基板と、前記電荷発生層に電界を印加するための電極と、をさらに備え、
前記光の入射側から、前記波長変換層、前記基板、前記電極および前記電荷発生層が、この順に設けられていることを特徴とする請求項１または２に記載の光電変換素子。 A substrate, and an electrode for applying an electric field to the charge generation layer,
The photoelectric conversion element according to claim 1, wherein the wavelength conversion layer, the substrate, the electrode, and the charge generation layer are provided in this order from the light incident side. 基板と、前記電荷発生層に電界を印加するための電極と、をさらに備え、
前記光の入射側から、前記基板、前記波長変換層、前記電極および前記電荷発生層が、この順に設けられていることを特徴とする請求項１または２に記載の光電変換素子。 A substrate, and an electrode for applying an electric field to the charge generation layer,
The photoelectric conversion element according to claim 1, wherein the substrate, the wavelength conversion layer, the electrode, and the charge generation layer are provided in this order from the light incident side. 基板と、前記電荷発生層に電界を印加するための電極と、をさらに備え、
前記光の入射側から、前記基板、前記電極、前記波長変換層および前記電荷発生層が、この順に設けられていることを特徴とする請求項１または２に記載の光電変換素子。 A substrate, and an electrode for applying an electric field to the charge generation layer,
The photoelectric conversion element according to claim 1, wherein the substrate, the electrode, the wavelength conversion layer, and the charge generation layer are provided in this order from the light incident side. 基板と、前記電荷発生層に電界を印加するための電極と、をさらに備え、
前記光の入射側から、前記基板、前記電極および前記電荷発生層が、この順に設けられると共に、前記波長変換層が、前記電荷発生層の中に設けられていることを特徴とする請求項１または２に記載の光電変換素子。 A substrate, and an electrode for applying an electric field to the charge generation layer,
2. The substrate, the electrode, and the charge generation layer are provided in this order from the light incident side, and the wavelength conversion layer is provided in the charge generation layer. Or the photoelectric conversion element of 2. 請求項１ないし６のいずれかに記載の光電変換素子と、
前記光電変換素子に電子を放出する電子放出部と、
を備えたことを特徴とする撮像素子。 The photoelectric conversion element according to any one of claims 1 to 6,
An electron emission portion for emitting electrons to the photoelectric conversion element;
An image pickup device comprising: 前記光の入射により前記電荷発生層で発生した正孔と、前記電子放出部から放出された電子とが結合することで得られる映像信号が入力する信号入力部を、さらに備え、
前記信号入力部は、前記電荷発生層のうち、前記波長変換層の前記波長変換領域に前記光が入射して得られる前記映像信号と、前記波長変換層の前記非波長変換領域に前記光が入射して得られる前記映像信号と、の差分により、前記光電変換効率の低い波長成分の光強度を算出することを特徴とする請求項７に記載の撮像素子。 A signal input unit for inputting a video signal obtained by combining holes generated in the charge generation layer by incidence of the light and electrons emitted from the electron emission unit;
The signal input unit includes: the video signal obtained when the light is incident on the wavelength conversion region of the wavelength conversion layer in the charge generation layer; and the light in the non-wavelength conversion region of the wavelength conversion layer. The image sensor according to claim 7, wherein the light intensity of the wavelength component having a low photoelectric conversion efficiency is calculated based on a difference from the video signal obtained by incidence. 請求項７または８に記載の撮像素子を、備えたことを特徴とする撮像装置。   An image pickup apparatus comprising the image pickup device according to claim 7. 複数の撮像素子と、
入射した前記光を、複数の分岐光に分光して前記複数の撮像素子に入射させる分光素子と、を備え、
前記複数の撮像素子のうち、少なくとも１つが、請求項７または８に記載の撮像素子で構成されていることを特徴とする撮像装置。
A plurality of image sensors;
A spectroscopic element that splits the incident light into a plurality of branched lights and enters the plurality of imaging elements, and
An image pickup apparatus, wherein at least one of the plurality of image pickup elements includes the image pickup element according to claim 7 or 8.
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