KR20200011043A - Image sensor including quantum dot layer - Google Patents

Abstract

According to the present invention, disclosed is an image sensor including a quantum dot layer. According to an embodiment of the present invention, the image sensor including the quantum dot layer comprises: a photoelectric conversion element formed in correspondence with a plurality of pixel areas on a substrate; a wiring layer formed on the substrate on which the photoelectric conversion element is formed; a color filter formed on the wiring layer and corresponding to the photoelectric conversion element; and a quantum dot layer formed on the color filter and absorbing light to emit a visible light in a specific wavelength area. Therefore, the present invention is capable of detecting both visible and infrared/ultraviolet rays.

Description

Image sensor including quantum dot layer {IMAGE SENSOR INCLUDING QUANTUM DOT LAYER}

The present invention relates to an image sensor including a quantum dot layer, and more particularly, to an image sensor including a quantum dot layer capable of displaying ultraviolet rays or infrared rays.

Recently, with the development of the computer industry and the communication industry, the demand for improved image sensors in various fields such as digital cameras, camcorders, personal communication systems (PCS), game machines, security cameras, and medical micro cameras is increasing.

In general, an image sensor is classified into a CCD (charge coupled device) type and a CMOS (complementary metal oxide semiconductor) type. Here, the CCD image sensor moves electrons generated by light to the output unit by using a gate pulse. Therefore, there is an external noise on the way, so the number of electrons does not change even if the voltage changes, so the noise does not affect the output signal. Therefore, it is widely used in multimedia devices requiring high image quality such as digital cameras and camcorders.

CMOS image sensors are simple to drive and can integrate signal processing circuits on a single chip, enabling smaller products. CMOS image sensors also have very low power consumption, making them easy to use in products with limited battery capacity. In addition, CMOS image sensors can be used interchangeably with CMOS process technology, reducing manufacturing costs. Therefore, the use of CMOS image sensors is rapidly increasing as high resolution is realized with technology development.

In addition, the image sensor has a characteristic of responding to light in the infrared region or the ultraviolet region which is invisible to the human eye. Therefore, if necessary, it is necessary to block the light in the visible region and transmit only the light in the infrared region or the ultraviolet region. In this case, an infrared or ultraviolet pixel is additionally used.

According to Korean Patent Publication No. 10-2010-0079088, a technique for detecting visible light by replacing a microlens and a color filter using a quantum dot lens, which has a complicated process and fails to detect light in an infrared or ultraviolet region. According to Korean Patent Laid-Open Publication No. 10-2015-0118885, an organic photodiode (OPD) structure using an organic material, a quantum dot, and a III-V material as an infrared detection material, and absorbs light to form an electron hole pair By forming (EHP) and generating current through the upper and lower electrodes, there is a problem that the photoelectric conversion efficiency is low and the process is complicated.

According to Ludong Li, zinc oxide quantum dots (ZnO QD) absorb electrons and create electron hole pairs by using a wide-band gap material (ZnO quantum dot) as a channel. There is a problem with this complexity.

According to US Patent No. 9,635,325, silicon nitride (SiNx) acts as an energy-down-shift by acting as a photoluminescence material, and excludes visible light and detects only ultraviolet light. However, there is a problem in that imaging is difficult due to lack of flux of optical light.

However, as described above, in order to measure light in the infrared region or the ultraviolet region with an image sensor, photodiodes (SOI, ZnO nanopatterns, TiO ₂ nano-rods (nano) having high sensitivity in the infrared or ultraviolet region wavelength bands -rod, graphene, etc.), the photodiode having high sensitivity in the infrared or ultraviolet wavelength range has a problem that the process is complicated, and only the amount of light in the infrared or ultraviolet region can be confirmed.

Republic of Korea Patent Publication No. 10-2010-0079088, "Image sensor and its manufacturing method" Republic of Korea Patent Publication No. 10-2015-0118885, "Unit pixel of the image sensor and an image sensor comprising the same" US Patent No. 9,635,325, "Systems and methods for detecting ultraviolet light using image sensors"

Ludong Li et al. 4, ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors, 2017.03

It is an object of embodiments of the present invention to manufacture an image sensor capable of display (imaging) according to the amount of infrared or ultraviolet (infrared / ultraviolet) light, using a quantum dot layer.

An object of the embodiments of the present invention by using a quantum dot layer absorbs light in the ultraviolet wavelength band or light in the infrared wavelength band and emits visible light, thereby manufacturing an image sensor capable of detecting both visible light and infrared / ultraviolet light It is for.

An object of the embodiments of the present invention is to manufacture an image sensor capable of detecting infrared rays or ultraviolet rays by a simple process of attaching a quantum dot layer to an image sensor used in the related art.

An image sensor including a quantum dot layer according to an embodiment of the present invention includes a photoelectric conversion element formed to correspond to a plurality of pixel areas on a substrate; A wiring layer formed on the substrate on which the photoelectric conversion element is formed; A color filter formed on the wiring layer and formed to correspond to the photoelectric conversion element; And a quantum dot layer formed on the color filter and absorbing light to emit light as visible light in a specific wavelength region.

First and second visible light may be incident on the photoelectric conversion element, and the first visible light may be visible light transmitted through the quantum dot layer, and the second visible light may be visible light in a specific wavelength region absorbed and emitted by the quantum dot layer. .

The quantum dot layer may emit energy of the second visible light by energy-down-shifting light in an ultraviolet wavelength band.

The quantum dot layer may emit energy of the second visible light by energy-up-shifting light of an infrared wavelength band.

The quantum dot layer is a blue quantum dot layer that transmits light in the visible light wavelength band of blue, green and red, and selectively absorbs only the light in the ultraviolet wavelength band or the infrared wavelength band to amplify the blue visible light. It may be a layer.

The quantum dot layer may be a red quantum dot layer that transmits blue, green, and red visible light wavelength bands, and selectively absorbs only light in an ultraviolet wavelength band or light in an infrared wavelength band to amplify red visible light.

The quantum dot layer may be a green quantum dot layer that transmits blue, green, and red visible light wavelength bands, and selectively absorbs only light in the ultraviolet wavelength band or light in the infrared wavelength band to amplify green visible light.

Transmittance of the quantum dot layer may be controlled according to the quantum dot concentration.

The quantum dot layer is CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnSe, CdZnSe, CdZnSe CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaASNA, Al, Al AlNPs, AlNAs, AlPAs, InNPs, InNAs, InPAs, GaAlNPs, GaAlNAs, GaAlPAs, GaInNPs, GaInNAs, GaInPAs, InAlNPs, InAlNAs, InAlPAs, and combinations thereof.

The quantum dot layer may include CdZnS / ZnS core / shell quantum dots or Mn-doped CdZnS / ZnS core / shell quantum dots.

The photoelectric conversion element may be a silicon-based photodiode.

The image sensor including the quantum dot may further include a micro lens on or below the quantum dot layer.

According to another embodiment of the present invention, an image sensor including a quantum dot includes a photoelectric conversion element formed to correspond to a plurality of pixel areas on a substrate; A wiring layer formed on the substrate on which the photoelectric conversion element is formed; A color filter formed on the wiring layer and formed to correspond to the photoelectric conversion element; And a micro lens formed on the color filter, wherein at least one of the color filters includes a quantum dot that absorbs light and emits light with visible light in a specific wavelength region.

According to an embodiment of the present invention, an image sensor capable of display (imaging) can be manufactured according to the amount of light in the ultraviolet wavelength band or light (infrared / ultraviolet) in the infrared wavelength band using the quantum dot layer.

According to an embodiment of the present invention, by using a quantum dot layer absorbs light in the ultraviolet wavelength band or light in the infrared wavelength band and emits light with visible light, an image sensor capable of detecting both visible light and infrared / ultraviolet light may be manufactured. Can be.

According to an embodiment of the present invention, an image sensor capable of detecting light in an ultraviolet wavelength band or light in an infrared wavelength band may be manufactured by a simple process of attaching a quantum dot layer to an image sensor used in the related art.

1A is a cross-sectional view illustrating an image sensor including a quantum dot layer according to an embodiment of the present invention.
1B is a cross-sectional view illustrating an image sensor including a quantum dot layer according to another exemplary embodiment of the present invention.
1C is a cross-sectional view illustrating an image sensor including a quantum dot layer according to another embodiment of the present invention.
2 is a three-dimensional view showing an image sensor including a quantum dot layer according to another embodiment of the present invention.
3A to 3C illustrate a single pixel of an image sensor including a quantum dot layer according to embodiments of the present invention.
4A to 4D illustrate red, green, and blue channels of an image photographed using an image sensor without a quantum dot layer and an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention. The matrix is shown.
5 illustrates a transmission electron microscope (TEM) image of an image sensor including a quantum dot layer according to embodiments of the present invention.
6 shows transmission electron microscopy (TEM) and X-ray spectroscopy (EDS) images of quantum dots of a coreshell structure.
FIG. 7 is a graph illustrating photoluminescence (PL) and absorption (Absorption) Abs according to wavelengths of quantum dots used in an image sensor including a quantum dot layer according to embodiments of the present invention.
8 is a graph illustrating a solar spectrum according to a wavelength of an image sensor including a quantum dot layer according to embodiments of the present invention.
9 shows an energy band diagram of CdZnS / ZnS coreshell quantum dots.
FIG. 10 illustrates photoluminescence intensity (PL intensity) and absorptance (Absorption) Abs according to a wavelength of an image sensor including a quantum dot layer according to a change in concentration of the quantum dots. One graph.
FIG. 11 is a graph illustrating photoluminescence intensity (PL intensity) according to a wavelength of an image sensor including a quantum dot layer according to a change in concentration of a quantum dot.
FIG. 12 is a graph illustrating current according to reverse bias of an image sensor including a quantum dot layer according to a change in concentration of a quantum dot.
FIG. 13 is a graph illustrating responsivity according to a wavelength of an image sensor including a quantum dot layer according to embodiments of the present invention according to a change in concentration of a quantum dot.
14 is a graph illustrating characteristics of pulse operations of a transfer transistor, a reset transistor, a source follower transistor, and a current source transistor of an image sensor including a quantum dot layer according to example embodiments.
FIG. 15 illustrates a voltage sensing margin (RV) according to a wavelength of an image sensor including a quantum dot layer according to embodiments of the present invention.
FIG. 16 illustrates a voltage sensing margin (RV) according to light intensity of an image sensor including a quantum dot layer according to embodiments of the present invention.
17A is an image illustrating a red channel of an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention, and FIG. 17B is an image including a quantum dot layer according to embodiments of the present invention. Image showing the green channel of the image taken using the sensor.
17C is an image illustrating a blue channel of an image photographed using an image sensor including a quantum dot layer according to embodiments of the present disclosure.
FIG. 18 is a graph illustrating a voltage sensing margin ΔV _dark-photo of an image sensor including a quantum dot layer according to embodiments of the present invention that changes with sunlight irradiation time.
FIG. 19 illustrates an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention that changes with sunlight irradiation time.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and the contents described in the accompanying drawings, but the present invention is not limited or limited to the embodiments.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

As used herein, “an embodiment”, “an example”, “side”, “an example”, etc., should be construed that any aspect or design described is better or advantageous than other aspects or designs. It is not.

In addition, the term 'or' refers to an inclusive or 'inclusive or' rather than an exclusive or 'exclusive or'. In other words, unless stated otherwise or unclear from the context, the expression 'x uses a or b' means any one of natural inclusive permutations.

Also, the singular forms “a” or “an”, as used in this specification and in the claims, generally refer to “one or more” unless the context clearly dictates otherwise or in reference to a singular form. Should be interpreted as.

The terminology used in the following description has been chosen to be general and universal in the art to which it relates, although other terms may vary depending on the development and / or change in technology, conventions, and preferences of those skilled in the art. Therefore, the terms used in the following description should not be understood as limiting the technical spirit, and should be understood as exemplary terms for describing the embodiments.

In addition, in certain cases, there is also a term arbitrarily selected by the applicant, in which case the meaning will be described in detail in the corresponding description. Therefore, the terms used in the following description should be understood based on the meanings of the terms and the contents throughout the specification, rather than simply the names of the terms.

Meanwhile, terms such as first and second may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from another.

In addition, when a part such as a film, layer, area, or configuration request is said to be "on" or "on" another part, not only when it is directly above another part, but also another film, layer, area, or component in between. It also includes the case where it is interposed.

Unless otherwise defined, all terms used in the present specification (including technical and scientific terms) may be used in a sense that can be commonly understood by those skilled in the art. In addition, terms that are defined in a commonly used dictionary are not ideally or excessively interpreted unless they are specifically defined clearly.

On the other hand, in describing the present invention, when it is determined that the detailed description of the related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. Terminology used herein is a term used to properly express an embodiment of the present invention, which may vary according to a user, an operator's intention, or a custom in the field to which the present invention belongs. Therefore, the definitions of the terms should be made based on the contents throughout the specification.

Hereinafter, an image sensor including a quantum dot layer according to embodiments of the present invention will be described with reference to FIGS. 1A to 1C.

1A to 1C are cross-sectional views illustrating an image sensor including a quantum dot layer according to embodiments of the present invention.

An image sensor including a quantum dot layer according to embodiments of the present invention is formed on a substrate on which a photoelectric conversion element 120 and a photoelectric conversion element 120 are formed to correspond to a plurality of pixel regions on the substrate 110. Are formed on the wiring layer 130 and the wiring layer 130, and are formed on the color filters 140R, 140G, and 140B and the color filters 140R, 140G, and 140B formed to correspond to the photoelectric conversion element 120. The quantum dot layer 150 absorbs light and emits light in visible light in a specific wavelength region.

The first visible light P1 and the second visible light P2 are incident on the photoelectric conversion element of the image sensor including the quantum dot layer according to the embodiments of the present invention, and the first visible light P1 is the quantum dot layer 150. The visible light transmitted through the color filters 140R, 140G, and 140B may be visible light, and the second visible light P2 may be visible light in a specific wavelength region absorbed and emitted by the quantum dot layer 150.

Therefore, the first visible light P1 includes visible light incident from the outside, and the second visible light P2 converts light of the ultraviolet wavelength band or light of the infrared wavelength band incident from the outside through the quantum dot layer 150. May include visible light.

Therefore, the image sensor including the quantum dot layer according to the embodiments of the present invention detects the visible light through the first visible light P1 due to a simple process of mounting the quantum dot layer 150, and then detects the quantum dot layer 150. Infrared rays or ultraviolet rays may be detected through the second visible light P2 incident therethrough.

In addition, the image sensor including a quantum dot layer according to embodiments of the present invention display (imaging) according to the amount of light in the ultraviolet wavelength band or light in the infrared wavelength band through the second visible light incident through the quantum dot layer 150 Can be implemented.

An image sensor including a quantum dot layer according to embodiments of the present invention may include an active pixel sensor array, and the active pixel sensor array includes a plurality of two-dimensionally arranged rows and columns. It may include unit pixels.

An electrical signal may be generated by incident light in each of the unit pixels, and the unit pixel may include a photoelectric conversion element 120 and a logic element, and the logic element may include a transfer transistor TX, a reset transistor RX, a source. It may include a follower transistor SF, a current source transistor CS, and a floating diffusion region FD.

An arrangement structure of a logic device and a photoelectric conversion device 120 formed on a substrate of an image sensor including a quantum dot layer according to an embodiment of the present invention will be described in detail with reference to FIGS. 3A to 3C.

In addition, preferably, the image sensor including the quantum dot layer according to an embodiment of the present invention may further include a micro lens 160 formed on or below the quantum dot layer 150.

1A to 1C include the same components except that the positions of the microlens 160 and the quantum dot layer 150 are different, the same components will be described with reference to FIG. 1A.

1A is a cross-sectional view illustrating an image sensor including a quantum dot layer according to an embodiment of the present invention.

An image sensor including a quantum dot according to an embodiment of the present invention is formed on a substrate on which a photoelectric conversion element 120 and a photoelectric conversion element 120 are formed that correspond to a plurality of pixel regions on a substrate 110. It is formed on the wiring layer 130, the wiring layer 130, formed on the color filters (140R, 140G, 140B), the color filters (140R, 140G, 140B) formed corresponding to the photoelectric conversion element, and absorbs light The microlenses may be formed on the quantum dot layer 150 and the quantum dot layer 150 that emit light with visible light in a specific wavelength region, and may include a microlens 160.

In the image sensor including the quantum dot layer according to the exemplary embodiment of the present invention, the microlens 160 may be formed on the quantum dot layer 150, and the microlens 160 is formed on the quantum dot layer 150. After passing the light through the microlens 160 and passing through the quantum dot layer 150, the amount of ultraviolet light or infrared rays that may be absorbed by the quantum dot layer 150 may be increased to improve the sensitivity of the image sensor.

The photoelectric conversion element 120 is formed on the substrate 110 to correspond to the plurality of pixel areas.

The substrate 110 may be a substrate having an n-type or p-type conductivity, or an epitaxial substrate on which a p-type or n-type epitaxial layer is formed on a bulk substrate. An isolation layer (not shown) may be formed in the substrate 110 to distinguish the active region from the field region, and the photoelectric conversion element 120 and the logic element may be formed in the active region of the substrate 110.

In addition, a deep well (not shown) may be formed in the substrate 110. The deep well forms a potential barrier so that charges generated deep in the substrate 110 do not flow into the photoelectric conversion element 110, and increases the recombination of charges and holes. It may serve as a crosstalk barrier that reduces cross-talk between pixels due to drift.

The photoelectric conversion element 120 absorbs incident light and accumulates charge corresponding to the amount of light. As the photoelectric conversion element 120, a photodiode, a photo transistor, a photo gate, a pinned photodiode, or a combination thereof may be used. Preferably, the photoelectric conversion element 120 may be a photodiode of a silicon substrate. .

Preferably, the photodiode of the silicon substrate may be an impurity region formed by doping an impurity in the substrate 110. The photodiode of the silicon substrate may include an N-type impurity region and a P-type impurity region, the N-type impurity region may be deeply formed in the substrate 110, and the P-type impurity region may be shallowly formed on the surface of the N-type impurity region. Can be.

The wiring layer 130 is formed on the substrate on which the photoelectric conversion element 120 is formed.

Preferably, a plurality of insulating layers are formed on the substrate 110 on which the photoelectric conversion element 120 and the logic element are formed, and each of the insulating layers forms a wiring layer 130 for electrical routing and / or light blocking of the devices. It may include.

The insulating layers formed on the photoelectric conversion element 120 may be formed of an insulating material having a high transmittance to improve light transmittance, and may include a light transmission part to improve the light transmittance on the upper photoelectric conversion element 120. Can be.

The wiring layer 130 may be connected to the logic elements or other wirings through the contact (not shown), and may be formed in a region other than the region in which the photoelectric conversion elements 120 are formed.

Therefore, the wiring layer 130 may be formed on the logic elements of each unit pixel, and light may be blocked from entering the region where the logic elements are formed.

The wiring layer 130 may include a plurality of metal wires, and the wiring layer 130 may be formed of a metal material such as tungsten (W) or copper (Cu).

It is formed on the wiring layer 130, and includes a color filter (140R, 140G, 140B) corresponding to the photoelectric conversion element 120, the color filter (140R, 140G, 140B) is a red color filter (140R), The green color filter 140G and the blue color filter 140B may be included.

The color filters 140R, 140G, and 140B may include a red color filter 140R, a green color filter 140G, and a blue color filter 140B according to the pixel.

The red color filter 140R may pass red light in visible light, and the photoelectric conversion element 120 of the red pixel may generate photoelectrons corresponding to the red light.

The green color filter 140G passes green light through visible light, and the photoelectric conversion element 120 of the green filter may generate photoelectrons corresponding to the green light.

The blue color filter 140B may pass the blue color filter B through the blue light in the visible light, and the photoelectric conversion element 120 of the blue pixel may generate photoelectrons corresponding to the blue light.

In addition, according to an embodiment, the color filter may include white (W), magenta (Mg), yellow (Y; yellow), or cyan (Cy).

The color filters 140R, 140G, and 140B include a quantum dot layer 150 that absorbs light and emits light with visible light in a specific wavelength region.

Preferably, the light absorbed by the quantum dot layer 150 may be light of an ultraviolet wavelength band or light of an infrared wavelength band.

The silicon-based photodiode has a depth that is incident on the silicon-based photodiode according to the wavelength range of light incident from the outside.

In the case of light having a long wavelength (about 750 nm to 1000 nm), light may be penetrated to a substrate 110 deeper than a silicon-based photodiode, and thus light may be lost, thereby causing an amount of light incident on the photoelectric conversion element 120. This can be reduced.

Also, for light in the ultraviolet wavelength band (λ ≦ 400 nm) with high energy (E ≧ 3.1 eV), a depleted thin top-Si layer of silicon-based photodiode Since only the amount of light is detected and the amount of light is reduced, change current efficiency due to incident photon change and sensitivity of the image sensor may be very low.

However, the image sensor including the quantum dot according to an embodiment of the present invention forms the quantum dot layer 150 to convert the incident light of the ultraviolet wavelength band or light of the infrared wavelength band into visible light (second visible light), It is incident on the photodiode based on the high-sensitivity visible light can detect the light of the ultraviolet wavelength band or light of the infrared wavelength band to improve the sensitivity of the infrared or ultraviolet light.

In addition, the quantum dot layer 150 may emit the second visible light by energy-down-shifting light in an ultraviolet wavelength band.

More specifically, the quantum dots included in the quantum dot layer 150 may absorb light in the ultraviolet wavelength band having a wavelength range of about 400 nm or less, and the light in the absorbed ultraviolet wavelength band is about 380 nm to 800 nm by the quantum dots. The light may be emitted as the second visible light P2 having a range. Accordingly, the quantum dot layer 150 may energy-down-shift the wavelength of the incident light into light having a short wavelength.

In addition, the quantum dot layer 150 may emit light of the second visible light by energy-up-shifting light in the infrared wavelength band.

More specifically, the quantum dots included in the quantum dot layer 150 may absorb light in the infrared wavelength band having a wavelength range of about 750 nm to 1000 nm, and the light in the absorbed infrared wavelength band is about 380 nm to 800 nm by the quantum dots. The light may be emitted as the second visible light P2 having a range. Accordingly, the quantum dot layer 150 may energy-up-shift the incident light into light having a long wavelength.

In an image sensor including a quantum dot layer according to an embodiment of the present invention, the quantum dot layer 150 may include any one of a red quantum dot layer including a red quantum dot, a green quantum dot layer including a green quantum dot, and a blue quantum dot layer including a blue quantum dot. It can be formed as one.

When the quantum dot layer 150 is a blue quantum dot layer, the blue quantum dot layer transmits light in the blue, green, and red visible wavelength bands, selectively absorbs only light in the ultraviolet wavelength band or light in the infrared wavelength band, thereby absorbing blue visible light. Can be amplified.

More specifically, when the visible light is incident on the image sensor including the blue quantum dot layer, the visible light passes through the red color filter 140R, the green color filter 140G, and the blue color filter 140B to make the first visible light P1. ) May be incident on the photoelectric conversion element 120.

When the light of the ultraviolet wavelength band or the light of the infrared wavelength band is incident on the image sensor including the blue quantum dot layer, the blue quantum dot layer absorbs the light of the ultraviolet wavelength band or the light of the infrared wavelength band and the blue visible light (the second visible light). P2 is emitted, and blue visible light (second visible light) P2 is not transmitted through the red color filter 140R and the green color filter 140G, but only through the blue color filter 140B.

Therefore, only the first visible light P1 is incident on the photoelectric conversion element 120 corresponding to the red color filter 140R and the green color filter 140G, and the photoelectric conversion element 120 corresponding to the blue color filter 140B. ), The first visible light P1 and the second visible light P2 are incident to each other, so that more light can be absorbed, resulting in a difference in light intensity or flux.

When the quantum dot layer 150 is a red quantum dot layer, the red quantum dot layer transmits light in the blue, green, and red visible light wavelength bands, selectively absorbs only light in the ultraviolet wavelength band or light in the infrared wavelength band, thereby absorbing red visible light. Can be amplified.

More specifically, when the visible light is incident on the image sensor including the red quantum dot layer, the visible light passes through the red color filter 140R, the green color filter 140G, and the blue color filter 140B to make the first visible light ( P1 is incident on the photoelectric conversion element 120.

When the light of the ultraviolet wavelength band or the light of the infrared wavelength band is incident on the image sensor including the red quantum dot layer, the red quantum dot layer absorbs the light of the ultraviolet wavelength band or the light of the infrared wavelength band and thus the red visible light (second visible light). P2 is emitted and the red visible light (second visible light) P2 is not transmitted through the blue color filter 140B and the green color filter 140G, and is transmitted only through the red color filter 140R.

Therefore, only the first visible light is incident on the photoelectric conversion element 120 corresponding to the blue color filter 140B and the green color filter 140G, and the photoelectric conversion element 120 corresponding to the red color filter 140R is formed. When the first visible light P1 and the second visible light P2 are incident, more light can be absorbed, and a difference occurs in the intensity or flux of light.

When the quantum dot layer 150 is a green quantum dot layer, the green quantum dot layer transmits light in the blue, green, and red visible wavelength bands, and selectively absorbs only the light in the ultraviolet wavelength band or the infrared wavelength band to absorb green visible light. Can be amplified.

More specifically, when the visible light is incident on the image sensor including the green quantum dot layer, the visible light passes through the red color filter 140R, the green color filter 140G, and the blue color filter 140B to make the first visible light ( P1 is incident on the photoelectric conversion element 120.

When the light of the ultraviolet wavelength band or the light of the infrared wavelength band is incident on the image sensor including the green quantum dot layer, the green quantum dot layer absorbs the light of the ultraviolet wavelength band or the light of the infrared wavelength band and thus the green visible light (second visible light). ), And the green visible light (second visible light) is not transmitted through the blue color filter 140B and the red color filter 140R, and is transmitted only through the green color filter 140G.

Therefore, only the first visible light is incident on the photoelectric conversion element 120 corresponding to the blue color filter 140B and the red color filter 140R, and the photoelectric conversion element 120 corresponding to the green color filter 140G is formed. As the first visible light and the second visible light are incident, more light can be absorbed, and a difference occurs in the light intensity or flux.

Although FIG. 1A illustrates a technique of using the blue quantum dot layer 150 as the quantum dot layer 150, the present invention is not limited thereto and a red quantum dot layer or a green quantum dot layer may be used.

In addition, the quantum dot layer 150 may control transmittance by adjusting the quantum dot concentration.

As the quantum dot layer 150 increases in concentration, the transmittance may be reduced in the visible wavelength range due to light scattering in the quantum dot layer 150.

Therefore, when the concentration of the quantum dots included in the quantum dot layer 150 increases, the intensity or flux of the light of the first visible light P1 is reduced, so that the influence of the second visible light P2 becomes larger, thus allowing for photoelectric conversion. The pixel intensity difference in the device 120 can be clearly seen.

More specifically, the first visible light P1 incident on the image sensor including the quantum dot layer according to the embodiments of the present invention may reduce the transmittance of light in the visible wavelength band by the quantum dot layer 150. 2, the visible light P2 may emit light in the ultraviolet wavelength band or light in the infrared wavelength band by the quantum dot layer 150 to increase light transmittance.

Accordingly, in the image sensor including the quantum dot layer according to the embodiments of the present invention, the transmittance of light in the visible wavelength band is decreased and the transmittance of light in the ultraviolet wavelength band or light in the infrared wavelength band is increased, thereby increasing pixel intensity ( pixel intensity) can be clarified.

The quantum dot layer 150 may include a plurality of quantum dots, and the quantum dots may include red, green, or blue quantum dots.

Quantum dots are CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, CdZnHd, CdZnHd, CdZnSd, CdZnHd HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAPN, AlN, AlN AlNAs, AlPAs, InNPs, InNAs, InPAs, GaAlNPs, GaAlNAs, GaAlPAs, GaInNPs, GaInNAs, GaInPAs, InAlNPs, InAlNAs, InAlPAs, and combinations thereof.

Preferably, the quantum dot layer 150 may use CdZnS / ZnS core / shell quantum dots or Mn-doped CdZnS / ZnS core / shell quantum dots, and CdZnS / ZnS core / shell quantum dots are blue quantum dots, and Mn-doped CdZnS The / ZnS core / shell quantum dots are quantum dots that emit yellow-orange light.

The CdZnS / ZnS core / shell quantum dots can increase the external quantum yield by adjusting the diameter of the CdZnS quantum dot core and the thickness of the ZnS quantum dot shell.

In the CdZnS / ZnS core / shell quantum dots, 7.5 mL of oleic acid (OA) was injected into a solution containing CdO and Zn (acet) ₂ , and heat-treated at room temperature (RT) to give Cd (OA) _2. and Zn (OA) to prepare a solution containing a _second, then 5ml of the solution containing the produced Cd (OA) _2, and Zn (OA) ₂ 1- octadecene (1-octadecene; 1-ODE ) injecting Heat treatment at 150 ℃. Thereafter, a first sulfur (S) precursor is injected and heat treatment is performed at 300 ° C. to prepare a solution containing Cd (OA) ₂ , Zn (OA) ₂ and sulfur, and then a second sulfur precursor is injected and 300 After heat treatment at 8 ° C. for 8 minutes to form a CdZnS core quantum dot, the heat treatment may be performed at 310 ° C. for 40 minutes to prepare CdZnS / ZnS core / shell quantum dots.

It includes a micro lens 160 formed on the quantum dot layer 150.

The microlens 160 may be formed to correspond to the photoelectric conversion element 120 and may have a predetermined radius of curvature.

The radius of curvature of the microlens 160 may vary depending on the wavelength of the light incident to each pixel, and changes the path of the light incident to a region other than the photoelectric conversion element 120 to direct light to the photoelectric conversion element 120. It can condense.

1B is a cross-sectional view illustrating an image sensor including a quantum dot layer according to another exemplary embodiment of the present invention.

An image sensor including a quantum dot according to another embodiment of the present invention is formed on a substrate on which a photoelectric conversion element 120 and a photoelectric conversion element 120 are formed that correspond to a plurality of pixel regions on a substrate 110. The microlenses 160 formed on the wiring layer 130 and the wiring layer 130 and formed on the color filters 140R, 140G and 140B and the color filters 140R, 140G and 140B which are formed to correspond to the photoelectric conversion elements. And a quantum dot layer 150 formed on the microlens 160 and absorbing light to emit light as visible light in a specific wavelength region.

1B is the same as FIG. 1A except that the quantum dot layer 150 is formed on the microlens 160, the description of the same elements will be omitted.

In the image sensor including the quantum dot layer according to another embodiment of the present invention, the quantum dot layer 150 is formed on the microlens 160, thereby providing a simple process of mounting the quantum dot layer 150 on a conventionally used image sensor. As a result, an image sensor capable of detecting ultraviolet rays or infrared rays can be manufactured.

Preferably, the quantum dot layer 150 of the image sensor including the quantum dot layer according to another embodiment of the present invention may include a transparent substrate and a quantum dot formed on the transparent substrate.

Glass or quartz may be used for the transparent substrate, and preferably, quartz having a transmittance of about 90% at all wavelengths may be used for the transparent substrate.

Quantum dots can be formed on a transparent substrate by a deposition or coating method.

1C is a cross-sectional view illustrating an image sensor including a quantum dot layer according to another embodiment of the present invention.

An image sensor including a quantum dot according to another embodiment of the present invention is formed on a substrate on which a photoelectric conversion element 120 and a photoelectric conversion element 120 are formed that correspond to a plurality of pixel regions on a substrate 110. Micros formed on the wiring layer 130 and the wiring layer 130, which are formed on the color filters 140R, 140G, and 140B and the color filters 140R, 140G, and 140B that correspond to the photoelectric conversion element 120. The lens 160 includes at least one of the color filters 140R, 140G, and 140B, and includes a quantum dot 151 that absorbs light and emits light with visible light in a specific wavelength region.

1C is the same as FIG. 1A except that the quantum dots 151 are included in the color filters 140R, 140G, and 140B, and thus descriptions of the same elements will be omitted.

An image sensor including a quantum dot according to another embodiment of the present invention is capable of detecting ultraviolet or infrared rays by blending the quantum dots 151 in the color filters 140R, 140G, and 140B to form a single layer. It is possible to reduce the thickness of the image sensor.

2 is a three-dimensional view showing an image sensor including a quantum dot layer according to another embodiment of the present invention.

2, an image sensor including a quantum dot layer according to another embodiment of the present invention is a simple process by mounting a quantum dot layer (Quartz glass with QDs film) on a conventionally used image sensor (3M pixel CIS) Infrared or ultraviolet cameras can be manufactured.

3A to 3C illustrate a single pixel of an image sensor including a quantum dot layer according to embodiments of the present invention.

3A illustrates a circuit diagram of a single pixel of an image sensor including a quantum dot layer according to embodiments of the present invention, FIG. 3B illustrates a stereoscopic view of a single pixel, and FIG. 3C illustrates embodiments of the present invention. An optical microscope image of a single pixel of an image sensor comprising a quantum dot layer according to FIG.

3A to 3C, a single pixel of an image sensor including a quantum dot layer according to embodiments of the present invention includes a photoelectric conversion element (n ⁺ -doped photodiode with QDs) including a quantum dot layer and a logic element. can do.

The logic device may include a transfer transistor TX, a reset transistor RX, a source follower transistor SF, a current source transistor CS, and a floating diffusion region FD.

The photoelectric conversion element (n ⁺ -doped photodiode with QDs) generates and accumulates photocharges in proportion to the amount of light incident from the outside, and the transfer transistor (TX) is connected to the photoelectric conversion element (n ⁺ -doped photodiode with QDs). Accumulated charge may be transferred to the floating diffusion region FD.

In addition, the floating diffusion region FD receives and accumulates charges generated by the photoelectric conversion elements (n ⁺ -doped photodiode with QDs) and accumulates them, depending on the amount of photocharges accumulated in the floating diffusion region FD. The source follower transistor SF may be controlled.

In addition, the source follower transistor SF serves as a source follower buffer amplifier in combination with a constant current source (not shown) located outside the unit pixel, and amplifies a potential change in the floating diffusion region FD. And it can be output to the output line (Vout).

In addition, the current source transistor CS may select unit pixels to be read in units of rows, and when the current source transistor CS is turned on, the power supply voltage VDD connected to the drain electrode of the source follower transistor SF is current. It may be transferred to the drain electrode of the source transistor CS.

In addition, the reset transistor RX may periodically reset the charges accumulated in the floating diffusion region FD. In more detail, the drain electrode of the reset transistor RX may be connected to the floating diffusion region FD, and the source electrode may be connected to the power supply voltage VDD.

When the reset transistor RX is turned on, the power supply voltage VDD connected to the source electrode of the reset transistor RX is transferred to the floating diffusion region FD, so that the reset transistor RX is turned on. The charges accumulated in the floating diffusion region FD may be discharged to reset the floating diffusion region FD.

4A to 4D illustrate red, green, and blue channels of an image photographed using an image sensor without a quantum dot layer and an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention. The matrix is shown.

4A to 4D illustrate differences of all pixel intensities for comparing an image photographed using an image sensor without a quantum dot layer and an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention. Obtained at the same location.

4A illustrates a matrix measured by separating red, green, and blue channels, and FIG. 4B illustrates a channel of an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention. 4C is a matrix illustrating a channel of an image photographed using an image sensor that does not include a quantum dot layer, and FIG. 4D is an image sensor including a quantum dot layer according to embodiments of the present invention. It is a matrix showing a channel calculated through a negative (-) of the image taken using the image sensor and the image sensor that does not include the quantum dot layer.

4A-4D, if A _{xy, with QD} -A _{xy, w / o QD} <0, especially for red and green channels, light scattering by quantum dot layers (e.g. core / shell QDs) It can be seen that the intensity of the pixel decreases due to light scattering.

The pixel intensity was set to zero to eliminate the scattering effect problem.

If A _{xy, with QD} -A _{xy, w / o QD} > 0, it can be seen that the pixel intensity increases due to quantum dot layers (eg core / shell QDs), especially in the blue channel.

5 illustrates a transmission electron microscope (TEM) image of an image sensor including a quantum dot layer according to embodiments of the present invention.

Referring to FIG. 5, it can be seen that a 17.3 nm quantum dot layer is uniformly formed on the photoelectric conversion element, and a Cd _0.5 Zn _0.5 S / ZnS coreshell quantum dot having a uniform size is included in the quantum dot layer.

6 shows transmission electron microscopy (TEM) and X-ray spectroscopy (EDS) images of quantum dots of a coreshell structure.

Referring to FIG. 6, it can be seen that Cd _0.5 Zn _0.5 S / ZnS coreshell quantum dots are formed.

FIG. 7 is a graph illustrating photoluminescence (PL) and absorption (Absorption) Abs according to wavelengths of quantum dots used in an image sensor including a quantum dot layer according to embodiments of the present invention.

FIG. 7 shows Mn ²⁺ -doped Cd _0.5 Zn _0.5 S / ZnS coreshell quantum dots as quantum dots included in the quantum dot layer, and is a quantum dot emitting yellow-orange light.

Referring to FIG. 7, the Mn ²⁺ -doped Cd _0.5 Zn _0.5 S / ZnS coreshell quantum dots absorb ultraviolet light to emit blue light, and not only the blue light but also an energy-tuning-effect. By increasing the stoke shift, yellow-orange light with a ˜583 nm peak may be emitted.

8 is a graph illustrating a solar spectrum according to a wavelength of an image sensor including a quantum dot layer according to embodiments of the present invention.

Referring to FIG. 8, the quantum dot layer absorbs ultraviolet rays to emit visible light (eg, blue light) and emits visible light (eg, blue light) by absorbing infrared rays and infrared rays. It can be seen that this results in an energy-up-shift.

9 shows an energy band diagram of CdZnS / ZnS coreshell quantum dots.

Referring to FIG. 9, it can be seen that the CdZnS / ZnS coreshell quantum dots absorb ultraviolet rays and emit blue visible light.

FIG. 10 illustrates photoluminescence intensity (PL intensity) and absorptance (Absorption) Abs according to a wavelength of an image sensor including a quantum dot layer according to a change in concentration of the quantum dots. One graph.

10 was measured by using a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots and changing the concentration of blue quantum dots to 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt% and 0.5 wt%.

Referring to FIG. 10, it can be seen that the absorption rate increases as the concentration of the quantum dots included in the quantum dot layer increases.

FIG. 11 is a graph illustrating photoluminescence intensity (PL intensity) according to a wavelength of an image sensor including a quantum dot layer according to a change in concentration of a quantum dot.

FIG. 11 was measured by using a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots and changing the concentration of blue quantum dots to 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, and 0.5 wt%.

Referring to FIG. 11, it can be seen that the light emission intensity increases as the concentration of the quantum dots included in the quantum dot layer increases.

FIG. 12 is a graph illustrating current according to reverse bias of an image sensor including a quantum dot layer according to a change in concentration of a quantum dot.

FIG. 12 shows a blue quantum dot layer comprising CdZnS / ZnS coreshell quantum dots, dark-state, no quantum dot layer (w / o QDs), 0.1 wt% quantum dots, 0.2 wt% It was measured by changing the quantum dots in concentration, the quantum dots in 0.3 wt% concentration, the quantum dots in 0.4 wt% concentration and the quantum dots in 0.5 wt% concentration.

12 was measured at the wavelength of 365 nm and the intensity (E) of ultraviolet light per unit area of 355 dl / cm ² .

Referring to FIG. 12, an image sensor including a quantum dot layer according to embodiments of the present invention increases photocurrent with increasing concentration at a wavelength of 365 nm, and includes 0.5 wt% of quantum dots at a reverse bias of 15V. , It increased from 0.17 ㎂ to 0.68 ㎂.

FIG. 13 is a graph illustrating responsivity according to a wavelength of an image sensor including a quantum dot layer according to embodiments of the present invention according to a change in concentration of a quantum dot.

FIG. 13 uses blue quantum dots, without quantum dot layers (w / o QDs), quantum dots at 0.1 wt%, quantum dots at 0.2 wt%, quantum dots at 0.3 wt%, quantum dots at 0.4 wt% and 0.5 It was measured by changing to wt% concentration of quantum dots.

Reactivity can be calculated by the following [Formula 1].

* [Equation 1]

Referring to FIG. 13, in the image sensor including the quantum dot layer according to the exemplary embodiments of the present invention, as the concentration of the quantum dot increases, the reactivity of the photoelectric conversion element increases, and the quantum dot of 0.5 wt% has a wavelength of 0.78 A at 365 nm. Significantly increased to / W.

14 is a graph illustrating characteristics of pulse operations of a transfer transistor, a reset transistor, a source follower transistor, and a current source transistor of an image sensor including a quantum dot layer according to example embodiments.

Referring to FIG. 14, it can be seen that the reset transistor is turned on to completely reset the floating diffusion region (0-210 μs).

In addition, the transfer transistor was turned on and the reset transistor was turned off to transfer electrons to the floating diffusion region 210-460 의 of the photoelectric conversion element, and the transfer transistor and the reset transistor were connected to the photoelectric conversion element 460-520 ㎲. It can be seen that is turned off to read the electrons transferred to the floating diffusion region at.

15 is a voltage sensing margin in accordance with the wavelength of the image sensor comprising a quantum dot layer in accordance with embodiments of the present invention; illustrates a (voltage sensing margin _{△ V} R).

FIG. 15 was measured by using a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots and changing the concentration of blue quantum dots to 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, and 0.5 wt%.

Voltage sensing margin _{(voltage sensing margin; R △ V} ) can be calculated using the following [Formula 2] and [Formula 3].

[Equation 2]

[Equation 3]

Referring to FIG. 15, the ratio of ΔV _dark-photo at 365 nm wavelength was increased to 194.66% of 0.5 wt% quantum dots, and the image sensor including the quantum dot layer according to the embodiments of the present invention was formed by the quantum dot layer. It can be seen that the voltage sensing margin is increased by about twice.

In addition, it can be seen that the voltage sensing margin is increased in the ultraviolet region of 450 nm or less.

16 is a voltage detection margin of the light intensity (Light intensity) of the image sensor comprising a quantum dot layer in accordance with embodiments of the present invention; illustrates a (voltage sensing margin _{△ V} R).

FIG. 16 was measured by using a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots and changing wavelengths λ to 254 nm, 365 nm, 450 nm, 551 nm, and 658 nm.

Referring to FIG. 16, the blue quantum dot shows a high voltage sensing margin in the ultraviolet wavelength band, and it can be seen that the voltage sensing margin is the best at the 365 nm wavelength.

17A is an image illustrating a red channel of an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention, and FIG. 17B is an image including a quantum dot layer according to embodiments of the present invention. This image shows the green channel of the image taken using the sensor.

17A and 17B used a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots.

17A and 17B, it can be seen that most pixel intensities represent zero. The pixel intensity of the red channel of the image taken using the image sensor including the quantum dot layer according to embodiments of the present invention is lower than the pixel intensity of the red channel of the image taken using the image sensor without the quantum dot layer to be.

17C is an image illustrating a blue channel of an image photographed using an image sensor including a quantum dot layer according to embodiments of the present disclosure.

17C used a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots.

Referring to FIG. 17C, it can be seen that the intensity of the blue light emitted from the quantum dot layer increases as the amount of ultraviolet rays irradiated toward the doll increases, and the emitted blue light is reabsorbed by the photoelectric conversion element through the color filter.

FIG. 18 is a graph illustrating a voltage sensing margin ΔV _dark-photo of an image sensor including a quantum dot layer according to embodiments of the present invention that changes with sunlight irradiation time.

FIG. 18 used a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots.

In clear weather having a high UV index of UV 3 (UV index: 3), an image sensor including a quantum dot layer according to embodiments of the present invention has a high voltage sensing margin of 0.903V, Cloudy weather: low UV (UV index: 1) shows a relatively low voltage-sensing margin of 0.715V.

In addition, in both sunny and cloudy weather, the image sensor including the quantum dot layer according to the embodiments of the present invention showed a higher voltage sensing margin than the image sensor not including the quantum dot layer.

FIG. 19 illustrates an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention that changes with sunlight irradiation time.

19 used a blue quantum dot layer including CdZnS / ZnS coreshell quantum dots.

Referring to FIG. 19, an image photographed using an image sensor including a quantum dot layer according to embodiments of the present invention is a value representing the intensity of ultraviolet rays per unit area as energy (1.785 ㎼ / cm ² , 2.650 ㎼ / cm ² , 2,879 ㎼ / cm ² , 2,114 ㎼ / cm ² , 1,185 ㎼ / cm ² and 442 ㎼ / cm ² ), the intensity of blue light emitted from the quantum dot layer increases, and the emitted blue light is photoelectrically converted through a color filter. It can be seen that the device is reabsorbed.

On the other hand, the embodiments of the present invention disclosed in the specification and drawings are merely presented specific examples to aid understanding and are not intended to limit the scope of the present invention. It is apparent to those skilled in the art that other modifications based on the technical idea of the present invention can be carried out in addition to the embodiments disclosed herein.

P1: first visible light P2: second visible light
110 substrate 121 photoelectric conversion element
122: wiring layer 140R: red color filter
140G: Green Color Filter 140B: Blue Color Filter
150: quantum dot layer 151: quantum dot
160: microlens

Claims (11)

A photoelectric conversion element formed on the substrate to correspond to the plurality of pixel regions;
A wiring layer formed on the substrate on which the photoelectric conversion element is formed;
A color filter formed on the wiring layer and formed to correspond to the photoelectric conversion element; And
A light formed in the color filter and simultaneously absorbing light in the visible wavelength band, the infrared wavelength band, and the ultraviolet wavelength band as the light in all the wavelength bands; Among the light of all wavelength bands that transmit 1 visible light and are simultaneously absorbed, the light of the ultraviolet wavelength band and the light of the infrared wavelength band are simultaneously absorbed with the light of the visible light wavelength band to emit light as the second visible light of a specific wavelength region. A quantum dot layer;
Including,
And the first visible light and the second visible light are simultaneously incident on the photoelectric conversion element, and the image sensor is configured to capture an image based on the first visible light and the second visible light. The method of claim 1,
The quantum dot layer is an image sensor including a quantum dot layer, characterized in that for emitting the second visible light by energy-down-shift the light of the ultraviolet wavelength band. The method of claim 1,
The quantum dot layer is an image sensor comprising a quantum dot layer, characterized in that for emitting the second visible light by energy-up-shift (light) in the infrared wavelength band. The method of claim 1,
The quantum dot layer is characterized in that the blue quantum dot layer that transmits the light in the visible light wavelength band of blue, green and red, and amplifies the blue visible light,
The quantum dot layer includes at least one of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnSTe, CdZnS, CdZnSe, CdZnSeS, GaN, AlN, AlP, GaP, InN, and combinations thereof. Image sensor. The method of claim 1,
The quantum dot layer is a red quantum dot layer that transmits light in the visible light wavelength band of blue, green and red, and amplifies red visible light,
The quantum dot layer includes at least one of CdSe, CdTe, CdSeS, CdSeTe, CdSTe, CdZnTe, GaAs, InP, InAs, GaNAs, GaPAs, AlNAs, AlPAs, InNAs, InPAs, GaAlNAs, GaAlPAs, GaInNAs, GaInPAs, InAls An image sensor comprising a quantum dot layer comprising any one. The method of claim 1,
The quantum dot layer is characterized in that the green quantum dot layer transmits light in the visible light wavelength band of blue, green and red, and amplifies the green visible light,
The quantum dot layer includes at least one of quantum dots including at least one of CdS, CdSe, ZnTe, CdSeS, CdSTe, ZnSeTe, ZnSTe, CdZnSe, CdZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, GaP, InN, InP, and combinations thereof. Including an image sensor. The method of claim 1,
The quantum dot layer is an image sensor comprising a quantum dot layer characterized in that the transmittance (transmittance) is controlled according to the quantum dot concentration. The method of claim 1,
The quantum dot layer includes a CdZnS / ZnS core / shell quantum dot or a Mn-doped CdZnS / ZnS core / shell quantum dot. The method of claim 1,
The photoelectric conversion element is an image sensor comprising a quantum dot layer, characterized in that the silicon-based photodiode. The method of claim 1,
The image sensor including the quantum dot layer,
An image sensor comprising a quantum dot layer, characterized in that it further comprises a micro lens on or below the quantum dot layer. Forming a substrate;
Forming a photoelectric conversion element on the substrate to correspond to the plurality of pixel regions;
Forming a wiring layer on the photoelectric conversion element;
Forming a color filter to correspond to the position of the photoelectric conversion element on the wiring layer; And
Forming a quantum dot layer on the color filter
Including,
The quantum dot layer simultaneously absorbs light in a visible wavelength band, an infrared wavelength band, and an ultraviolet wavelength band as light in all wavelength bands, and transmits first visible light, which is light in the visible wavelength band, among the lights in all the wavelength bands simultaneously absorbed. Among the light of all wavelength bands that are simultaneously absorbed, the light of the ultraviolet wavelength band and the light of the infrared wavelength band are simultaneously absorbed with the light of the visible light wavelength band to emit light as the second visible light of a specific wavelength region,
The first visible light and the second visible light are simultaneously incident on the photoelectric conversion element, and the image sensor is photographed based on the first visible light and the second visible light incident at the same time. Manufacturing method.

Images