JP2014120631A - Method of manufacturing semiconductor element, and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element capable of obtaining semiconductor elements to each of which a conductive connection sheet is adhered with a good position accuracy as a block, and to provide a method of manufacturing a semiconductor device using the conductive connection sheet that enables positioning of a terminal provided in the semiconductor element and a terminal provided in an opposed electronic component with ease and excellent position accuracy when a metal material is agglomerated between the terminal provided in the semiconductor element and the terminal provided in the opposed electronic component to connect between the terminals.SOLUTION: A method of manufacturing a semiconductor element includes the steps of: adhering a conductive connection sheet 1 onto a surface side where a terminal (a first terminal) 21 of a semiconductor wafer 100 in which semiconductor chips (semiconductor elements) 20 are formed is provided by using positioning marks (first positioning marks) 455 formed on the semiconductor wafer 100 and defective parts (first defective parts) 121 lacking a metal layer 12; and obtaining the semiconductor chips 20 to each of which the conductive connection sheet 1 is adhered by individualizing the semiconductor wafer 100.

Description

  The present invention relates to a method for manufacturing a semiconductor element and a method for manufacturing a semiconductor device.

  In recent years, along with the demand for higher functionality and miniaturization of electronic equipment, the pitch between connection terminals in electronic materials is becoming increasingly narrow, and the connection between terminals in a fine wiring circuit is also becoming more sophisticated.

  As an inter-terminal connection method, for example, when an electronic component such as an IC chip is electrically connected to a circuit board (mounting board), a large number of terminals are connected using an anisotropic conductive adhesive or an anisotropic conductive film. Flip chip connection technology that connects all at once is known (for example, see Patent Documents 1 and 2).

  Such an anisotropic conductive adhesive or anisotropic conductive film is a film or paste in which conductive particles are dispersed in an adhesive mainly composed of a thermosetting resin, and the electronic member to be connected thereto By disposing them in between and thermocompression bonding, a large number of opposing terminals can be connected together, while insulation between adjacent terminals can be ensured by the resin in the adhesive.

  However, in the anisotropic conductive adhesive or anisotropic conductive film, it is difficult to control the aggregation of the conductive particles, and the conductive particles and the terminals or the conductive particles face each other without sufficiently contacting each other. Some of the terminals do not conduct, or conductive particles remain in the resin (insulating region) other than between the opposing terminals (conducting region), and insulation between adjacent terminals is not sufficiently secured. There was a problem. For this reason, it was difficult to cope with further narrowing of the pitch between terminals.

  On the other hand, when manufacturing a connection terminal on an electronic member, conventionally, a solder paste is printed on a substrate provided with a metal pad, and the solder paste is heated and melted using a solder reflow apparatus or the like. However, in this method, when the connection terminals have a narrow pitch, the cost of the mask used when printing the solder paste increases, and if the connection terminals are small, printing may not be possible.

  Also, in the method in which solder balls are mounted on the connection terminals and the solder balls are heated and melted using a solder reflow device or the like, if the connection terminals are small, the manufacturing cost of the solder balls increases, and the solder balls having a small diameter In some cases, it was technically difficult to fabricate.

JP-A 61-276873 JP 2004-260131 A

  In order to solve such problems, a conductive connection sheet composed of a laminate including a resin composition layer containing a resin component and a metal layer composed of a low melting point metal material has been studied. .

  In a state where the conductive connection sheet having such a configuration is arranged so that the terminals face each other between the terminals of the electronic component and the terminals of the circuit board, the low melting point metal material is heated at a temperature equal to or higher than the melting point. When heated, the molten metal material selectively agglomerates between the terminals facing each other, and the resin component is filled in the region excluding the space between the terminals. Electrical connection can be made with the selectively agglomerated metal material, and furthermore, insulation between adjacent terminals can be ensured by the resin component contained in the resin composition.

  The electrical connection between the terminal of the semiconductor element and the terminal of the counter electronic component using such a conductive connection sheet is usually performed as follows.

  That is, first, a conductive connection sheet is affixed to the surface side where the terminals of the semiconductor element are provided. Next, the semiconductor element on which the conductive connection sheet is attached is arranged on the surface where the terminals of the counter electronic component are provided so that the conductive connection sheet is interposed between them. Next, by heating the low melting point metal material at a temperature equal to or higher than the melting point, the molten metal material is selectively aggregated between the terminals facing each other, and the resin component is filled in the region except between the terminals. By doing so, the terminals are electrically connected.

  Using the connection method as described above, the terminal of the semiconductor element and the terminal of the counter electronic component are electrically connected. In such a connection method, when the semiconductor element is disposed on the counter electronic component, It is necessary to align the terminals of the corresponding semiconductor element and the terminals of the counter electronic component so as to face each other.

  This alignment can be usually performed by providing positioning marks on both the semiconductor element and the counter electronic component in advance on the surface side where these terminals are provided, and using these. When the conductive connection sheet is affixed to the semiconductor element as described above, the positioning mark provided on the semiconductor element is also covered by the metal layer of the conductive connection sheet, and this positioning mark can be recognized. There is a problem of disappearing.

  Moreover, in the method of affixing the conductive connection sheet for each semiconductor element, there arises a problem that time and labor are required for the affixing operation.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor element manufacturing method capable of obtaining a plurality of semiconductor elements to which a conductive connection sheet is attached with high positional accuracy, and a terminal included in the semiconductor element and a terminal included in the counter electronic component. When a metal material is agglomerated selectively between the terminals and the terminals are electrically connected to each other, the terminals of the semiconductor element and the terminals of the counter electronic component are positioned easily and with excellent positional accuracy. Another object of the present invention is to provide a method for manufacturing a semiconductor device using a conductive connection sheet.

Such an object is achieved by the present invention described in the following (1) to (17).
(1) A semiconductor element in which a conductive connection sheet constituted by a laminate including a first resin composition layer containing a resin component and a metal layer made of a low melting point metal material has a first terminal. A method of manufacturing a semiconductor element for manufacturing a semiconductor element attached to a surface side on which the first terminal is provided,
A first positioning mark formed on the semiconductor wafer and a part of the metal layer are partially missing on a surface side of the semiconductor wafer on which the plurality of semiconductor elements are formed, on which the first terminal is provided. A pasting step of pasting the conductive connection sheet using the first defect portion to be;
A method of manufacturing a semiconductor element, comprising: a step of dividing the semiconductor wafer along a dicing line into pieces to obtain the semiconductor element to which the conductive connection sheet is attached. .

  (2) The manufacturing of the semiconductor element according to (1), wherein in the attaching step, the conductive connection sheet is attached to the semiconductor wafer so that the first deficient portion overlaps the first positioning mark. Method.

  (3) The method of manufacturing a semiconductor element according to (2), wherein the first defect portion is set to a size including the first positioning mark.

  (4) The method for manufacturing a semiconductor element according to (3), wherein the first defect portion has substantially the same shape as the first positioning mark.

  (5) The method for manufacturing a semiconductor element according to any one of (1) to (4), wherein the first resin composition layer is deficient at a position corresponding to the first deficient portion.

  (6) The said laminated body is further provided in the surface opposite to the said 1st resin composition layer of the said metal layer, and is provided with the 2nd resin composition layer containing a resin component (1) The manufacturing method of the semiconductor element in any one of (5) thru | or (5).

  (7) The method for manufacturing a semiconductor element according to (6), wherein the second resin composition layer is deficient at a position corresponding to the first deficient portion.

  (8) The method for manufacturing a semiconductor element according to (6) or (7), wherein the second resin composition layer includes a compound having a flux function.

  (9) The method for manufacturing a semiconductor element according to any one of (1) to (8), wherein the first resin composition layer includes a compound having a flux function.

  (10) The method for producing a semiconductor element according to (8) or (9), wherein the compound having the flux function contains a compound having at least one of a phenolic hydroxyl group and a carboxyl group.

  (11) The metal layer includes tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron ( (1) to (10) which is an alloy of at least two kinds of metals selected from the group consisting of Fe), aluminum (Al), gold (Au), germanium (Ge) and copper (Cu) or a simple substance of tin. The manufacturing method of the semiconductor element in any one of 1).

  (12) The semiconductor element has a first terminal region in which the first terminal is disposed, and the first positioning mark is disposed outside the first terminal region. The method for manufacturing a semiconductor device according to any one of (1) to (11) above.

  (13) In the singulation process, the first positioning mark serves as a position recognition mark for recognizing the position of the dicing line. Manufacturing a semiconductor element according to any one of (1) to (11) Method.

  (14) The metal layer has a second defect portion that is missing at a position overlapping the dicing line when the conductive connection sheet is adhered to the semiconductor wafer in the attaching step. 13) The manufacturing method of the semiconductor element in any one of.

  (15) The semiconductor element manufacturing according to any one of (1) to (13), wherein the first positioning mark is formed corresponding to each of the semiconductor elements formed in the semiconductor wafer. Method.

(16) After preparing the semiconductor element to which the conductive connection sheet is attached using the method for manufacturing a semiconductor element according to (15), the first terminal included in the semiconductor element and a counter electron A method of manufacturing a semiconductor device, wherein a connection portion that electrically connects a second terminal of a component is formed to obtain a semiconductor device in which the semiconductor element is mounted on the counter electronic component,
A pickup step of picking up the semiconductor element to which the conductive connection sheet is attached;
Using the first positioning mark and the second positioning mark formed on the counter electronic component, the semiconductor element and the counter electronic component are positioned, and the second of the counter electronic component is positioned. An arrangement step of arranging the semiconductor element so that the conductive connection sheet is interposed on a surface provided with terminals;
A heating step of forming the connection portion by heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and the first resin composition layer is deformable;
A method for manufacturing a semiconductor device, comprising: a curing / solidifying step for curing or solidifying the first resin composition layer.

  (17) The counter electronic component includes a second terminal region in which the second terminal is disposed, and the second positioning mark is disposed outside the second terminal region. The method for manufacturing a semiconductor device according to the above (16).

  According to the method for manufacturing a semiconductor device of the present invention, the first positioning mark formed on the semiconductor wafer and the first defect portion where the metal layer is partially lost are used. The conductive connection sheet can be affixed to the surface side on which the terminal 1 is provided with excellent positional accuracy. Further, by cutting the semiconductor wafer along the dicing line into pieces, it becomes possible to obtain a plurality of semiconductor elements to which the conductive connection sheet is attached in a lump.

  In the conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention, the metal layer includes a first defect portion that is missing at a position overlapping with the first positioning mark of the semiconductor wafer. Accordingly, when the conductive connection sheet is disposed on the semiconductor wafer, the first positioning mark and the first defect portion can be overlapped with each other in the thickness direction of the conductive connection sheet. . Therefore, in this state, by attaching the conductive connection sheet to the semiconductor wafer, when the semiconductor wafer is viewed from the surface side where the first terminals are provided, the first positioning material is interposed via the conductive connection sheet. The mark can be recognized.

  Therefore, according to the method for manufacturing a semiconductor device of the present invention, when the semiconductor element obtained by dividing the semiconductor wafer into pieces and the counter electronic component are electrically connected, the first of the semiconductor element is included. The semiconductor element and the counter electronic component can be positioned with high positional accuracy using the positioning mark and the second positioning mark of the counter electronic component.

FIG. 1A is a schematic view showing an example of a semiconductor device manufactured by using the method for manufacturing a semiconductor device of the present invention (FIG. 1A is a plan view, and FIG. 1B is AA in FIG. 1A). FIG. FIG. 2 (a) is a plan view, FIG. 2 (b) is a partially enlarged plan view, and FIG. 2 (c) shows a first embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention. ) Is a cross-sectional view taken along the line BB in FIG. FIG. 3A is a schematic view showing an example of a semiconductor wafer applied to the method of manufacturing a semiconductor device using the conductive connection sheet shown in FIG. 2 (FIG. 3A is a plan view, and FIG. 3B is a partially enlarged plan view). FIG. 3 (c) is a cross-sectional view taken along the line CC in FIG. 3 (b). FIG. 4A is a plan view and FIG. 4B is a partially enlarged plan view for explaining a method for manufacturing the semiconductor device shown in FIG. 1 using the method for manufacturing a semiconductor device of the present invention. FIG. 4 (c) is a cross-sectional view taken along the line CC in FIG. 4 (b). FIG. 5A is a plan view and FIG. 5B is a partially enlarged plan view for explaining a method for manufacturing the semiconductor device shown in FIG. 1 using the method for manufacturing a semiconductor device of the present invention. Fig. 5 (c) is a cross-sectional view taken along the line CC in Fig. 5 (b). The figure for demonstrating the method of manufacturing the semiconductor device shown in FIG. 1 using the manufacturing method of the semiconductor device of this invention (FIG. 6 (a) is a top view, FIG.6 (b) is a partial expanded plane. FIG. 6C is a cross-sectional view taken along the line CC in FIG. 6B. It is a longitudinal cross-sectional view for demonstrating the method to manufacture the semiconductor device shown in FIG. 1 using the manufacturing method of the semiconductor device of this invention. FIG. 8A is a plan view, FIG. 8B is a partially enlarged plan view, and FIG. 8C is a schematic view showing a second embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention. ) Is a cross-sectional view taken along the line BB in FIG. FIG. 9A is a plan view, FIG. 9B is a partially enlarged plan view, and FIG. 9C is a schematic view showing a third embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention. ) Is a sectional view taken along line B-B in FIG. FIG. 10A is a plan view, FIG. 10B is a partially enlarged plan view, and FIG. 10C shows a fourth embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention. ) Is a sectional view taken along line B-B in FIG. FIG. 11A is a plan view, FIG. 11B is a partially enlarged plan view, and FIG. 11C shows a fifth embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention. ) Is a cross-sectional view taken along line BB in FIG. FIG. 12A is a plan view and FIG. 12B is a partially enlarged plan view showing an example of a semiconductor wafer applied to the method for manufacturing a semiconductor device using the conductive connection sheet shown in FIG. FIG.12 (c) is CC sectional view taken on the line in FIG.12 (b). FIG. 13A is a plan view, FIG. 13B is a partially enlarged plan view, and FIG. 13C is a schematic view showing a sixth embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention. ) Is a cross-sectional view taken along the line BB in FIG. It is a top view which shows the shape in area | regions other than the defect | deletion part of the metal layer with which an electroconductive connection sheet is provided.

  Hereinafter, a method for manufacturing a semiconductor element and a method for manufacturing a semiconductor device according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  First, prior to describing a method for manufacturing a semiconductor element and a method for manufacturing a semiconductor device of the present invention, a semiconductor device manufactured using the method for manufacturing a semiconductor device of the present invention will be described.

<Semiconductor device>
1A and 1B are schematic views showing an example of a semiconductor device manufactured using the method for manufacturing a semiconductor device of the present invention (FIG. 1A is a plan view, and FIG. 1B is a plan view in FIG. 1A). It is an AA line sectional view). In the following description, the front side in FIG. 1A and the upper side in FIG. 1B are “up”, the back side in FIG. 1A, and in FIG. 1B. The lower side is called “lower”.

  A semiconductor device 10 shown in FIG. 1 includes a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, and a plurality of conductive bumps (terminals) 70.

  The interposer (opposing electronic component) 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin). The plan view shape of the interposer 30 is a rectangular quadrilateral in the present embodiment.

  Furthermore, the interposer 30 has a terminal 41 electrically connected to the upper surface (one surface). The terminal 41 is made of, for example, a conductive metal material such as copper. In the present embodiment, as shown in FIG. 1A, nine terminals having a circular shape in plan view are provided. In FIG. 3, the upper surface and the lower surface are arranged at equal intervals in the vertical and horizontal directions so as to form a lattice.

  In this specification, a region in which a terminal group including these nine terminals (second terminals) 41 is provided is referred to as a “terminal region (second terminal region) 411”, which is outside the terminal region. The region in which the terminal 41 is not provided is referred to as a “non-terminal region (second non-terminal region) 412”, and the terminal region 411 includes the first side 451, the second side 452, and the third side. This is an area inside the rectangle surrounded by the four sides of the side 453 and the fourth side 454.

  Further, the interposer 30 has two positioning marks (second positioning marks) 456 provided in the non-terminal region 412 on the upper surface. In the present embodiment, the two positioning marks 456 are: The cross-sectional shape of the interposer 30 is a cross shape, and the intersection (corner) where the first side 351 and the second side 352 of the interposer 30 intersect, and the third side 353 and the fourth side 354 of the interposer 30. One is provided at each intersection (corner) where the and intersect, and is located inside each vertex.

  Furthermore, a plurality of vias (through holes: through holes) (not shown) are formed through the interposer 30 in the thickness direction.

  Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 via each via, and the other end (lower end) protruding from the lower surface (the other surface) of the interposer 30. Yes.

  The portion of the bump 70 protruding from the interposer 30 has a shape in which a hemisphere is connected to the tip of a cylinder.

  The bumps 70 are mainly composed of a brazing material such as solder, silver brazing, copper brazing, or phosphor copper brazing.

  Further, the semiconductor chip 20 has a rectangular shape as a whole, and has nine terminals 21 electrically connected to the lower surface thereof so as to correspond to the nine terminals 41 of the interposer 30. The terminal 41 and the terminal 21 corresponding to each are electrically connected via the connection portion 81.

  In the semiconductor device 10, the terminal 21 included in the semiconductor chip 20 and the terminal 41 included in the interposer 30 are opposed to each other along a direction perpendicular to the surface direction of the semiconductor chip 20 and the interposer 30. Has been placed. That is, one terminal 21 is arranged so as to ride on a straight line perpendicular to the surface direction in a one-to-one relationship with respect to one terminal 41 corresponding thereto. Therefore, the region (first terminal region) in which the terminal group including nine terminals (first terminals) 21 is provided coincides with the above-described “terminal region 411” and is located outside the terminal region 411. A region where the terminal 21 is not provided (first non-terminal region) is a region included in the above-described “non-terminal region 412”.

  Further, the semiconductor chip 20 has two positioning marks (first positioning marks) 455 provided in a region (first non-terminal region) included in the non-terminal region 412 on the lower surface. In the embodiment, the two positioning marks 455 have a cross shape in plan view, and an intersection portion (corner portion) where the first side 451 and the fourth side 454 of the terminal region 411 intersect with each other and the second side mark 455. One is provided at each intersection (corner) where the side 452 and the third side 453 intersect, and is positioned outside each vertex. Note that the two positioning marks 456 included in the interposer 30 are also located outside the respective apexes of the terminal region 411.

  A plurality of terminals 41 are formed on the interposer 30. A plurality of terminals 21 included in the semiconductor chip 20 are electrically connected to the terminals 41 via connection portions 81.

  In the present embodiment, as shown in FIG. 1B, the terminal 21 is configured to protrude from the surface side formed on the semiconductor chip 20, and the terminal 41 also protrudes from the interposer 30. It has a configuration.

  Further, the gap between the semiconductor chip 20 and the interposer 30 is filled with a sealing material made of various resin materials, and the sealing layer 80 is formed by a solidified product (or a cured product) of the sealing material. Is formed. The sealing layer 80 has a function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and a function of preventing entry of foreign matter, moisture, and the like into the gap.

  In the present embodiment, the semiconductor chip 20 and the interposer 30 each have a rectangular shape in plan view. However, the present invention is not limited to this. For example, the shape in plan view may be a square shape or a circular shape. An oval shape may be used. Furthermore, the case where the semiconductor chip 20 and the interposer 30 each have nine terminals 21 and 41 is illustrated, but of course, the present invention is not limited to this, and the semiconductor chip 20 and the interposer 30 may be 4, 8 , 16, 20, 25 or any other number of terminals 21, 41 may be provided.

  In addition, the positioning marks 455 and 456 are each formed in a cross shape in plan view. However, the positioning marks 455 and 456 are not limited to this. For example, the positioning marks 455 and 456 are polygonal shapes such as a triangular shape, a quadrangular shape, and a pentagonal shape, and a perfect circle. It may have a circular shape such as a shape and an oval shape, an L shape, or the like.

<Conductive connection sheet>
In the semiconductor device 10 having such a configuration, a resin composition layer containing a resin component for forming the connection portion 81 and the sealing layer 80 to which the semiconductor element manufacturing method and the semiconductor device manufacturing method of the present invention are applied, and A conductive connection sheet 1 configured by a laminate including a metal layer composed of a low melting point metal material is used.

  That is, the conductive connection sheet 1 is heated in a state in which it is disposed between the semiconductor chip (semiconductor element) 20 and the interposer (opposite electronic component) 30 disposed to face each other in the method for manufacturing a semiconductor device of the present invention. The terminal 81 (first terminal) 21 included in the semiconductor chip 20 and the terminal (second terminal) 41 included in the interposer 30 are electrically connected to each other by the connecting portion 81 formed by It is used to join the poser 30.

  In the semiconductor device manufacturing method of the present invention using the conductive connection sheet 1, the conductive connection sheet 1 corresponding to the shape of the semiconductor wafer 100 is attached to the semiconductor wafer 100 in which the plurality of semiconductor elements 20 are formed. Thereafter, the semiconductor wafer 100 is singulated to form the semiconductor chip 20 to which the conductive connection sheet 1 is attached, and the semiconductor chip 20 is mounted on the interposer 30 to thereby form the conductive connection sheet 1. The semiconductor device 10 provided with the connection part 81 and the sealing layer 80 derived from is obtained.

  Hereinafter, 1st Embodiment of the conductive connection sheet 1 used for formation of the connection part 81 and the sealing layer 80 to which the manufacturing method of the semiconductor device of this invention is applied is described.

<< First Embodiment >>
FIG. 2 is a schematic diagram showing a first embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention (FIG. 2A is a plan view, FIG. 2B is a partially enlarged plan view, FIG.2 (c) is the BB sectional drawing in FIG.2 (b). In FIG. 2A, for the sake of clarity, the position corresponding to the semiconductor chip 20 when it is attached to the semiconductor wafer 100 is indicated by a one-dot chain line. Although the defective portion 121 is largely described in the connection sheet 1, the actual conductive connection sheet 1 has more defective portions 121 corresponding to the semiconductor chip 20. In the following description, the front side in FIG. 2A and FIG. 2B and the upper side in FIG. 2C are “up”, and the back side in FIG. 2A and FIG. 2B. The lower side in FIG. 2C is referred to as “lower”.

  The conductive connection sheet 1 is composed of a laminate including a resin composition layer containing a resin component and a metal layer composed of a low-melting-point metal material. In the present embodiment, FIG. ), The two resin composition layers 11 laminated such that the first resin composition layer 11, the metal layer 12, and the second resin composition layer 13 are joined together in this order, 13 and one metal layer 12 is formed of a laminated body having a three-layer structure.

  In the conductive connection sheet 1 having such a configuration, the first resin composition layer 11 and the second resin composition layer 13 are composed of a resin composition containing a resin component, and the metal layer 12 is a low melting point metal material. It is a layer comprised with the metal foil comprised by this.

  Hereinafter, although each layer which comprises the conductive connection sheet 1 is demonstrated one by one, both the 1st resin composition layer 11 and the 2nd resin composition layer 13 are comprised with the resin composition containing a resin component. Therefore, the first resin composition layer 11 will be described as a representative. Hereinafter, the first resin composition layer 11 and the second resin composition layer 13 may be simply referred to as “resin composition layer 11” and “resin composition layer 13”.

[Resin composition layer 11]
The resin composition layer 11 is composed of a resin composition containing a resin component.

  In the present invention, the resin composition can be used in a liquid or solid form at room temperature. In the present specification, “liquid state at room temperature” means a state that does not have a certain form at room temperature (25 ° C.), and includes a paste form.

  The resin composition is not particularly limited as long as it contains a resin component, and a curable resin composition or a thermoplastic resin composition can be used.

  Examples of the curable resin composition include a curable resin composition that is cured by heating and a curable resin composition that is cured by irradiation with actinic radiation. Among these, a curable resin that is cured by heating. A composition is preferably used. The curable resin composition cured by heating is excellent in mechanical properties such as linear expansion coefficient and elastic modulus after curing.

  In addition, the thermoplastic resin composition is not particularly limited as long as it is flexible enough to be molded by heating to a predetermined temperature.

(A) Curable resin composition A curable resin composition contains a curable resin component, and is melted and cured by heating.

  In addition to the curable resin component, the curable resin composition contains a compound having a flux function, a film-forming resin, a curing agent, a curing accelerator, a silane coupling agent, and the like as necessary. May be.

Hereinafter, various materials contained in the curable resin composition will be described in detail.
(I) Curable resin component Although a curable resin component will not be specifically limited if it melts and hardens | cures by heating, Usually, what can be used as an adhesive agent component for semiconductor device manufacture is used.

  Such a curable resin component is not particularly limited. For example, epoxy resin, phenoxy resin, silicone resin, oxetane resin, phenol resin, (meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin , Maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide-triazine resin and the like. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Among these, an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance, moisture resistance, and chemical resistance of a cured product. In addition, these curable resin components may be used individually by 1 type, or may use 2 or more types together.

  The epoxy resin is not particularly limited, and any epoxy resin that is liquid at room temperature and solid at room temperature can be used. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When the curable resin composition is liquid, it is preferable to use an epoxy resin that is liquid at room temperature. When the curable resin composition is solid, both liquid and solid epoxy resins should be used. Furthermore, it is preferable that the curable resin composition contains a film-forming resin component.

  Although it does not specifically limit as a liquid epoxy resin at room temperature (25 degreeC), A bisphenol A type epoxy resin, a bisphenol F type epoxy resin, etc. are mentioned, Among these, it can use combining 1 type or 2 types. .

  The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. When the epoxy equivalent is less than the lower limit, depending on the type of epoxy resin used, the shrinkage of the cured product tends to increase, and the semiconductor device 10 and the electronic device including the semiconductor device 10 may be warped. Moreover, when it exceeds the said upper limit, when it is set as the structure which uses a film-forming resin component together with a curable resin composition, it may show the tendency for the reactivity with a film-forming resin component, especially a polyimide resin to fall. .

  Further, the epoxy resin solid at room temperature (25 ° C.) is not particularly limited. , A glycidyl ester type epoxy resin, a trifunctional epoxy resin, a tetrafunctional epoxy resin, and the like. Among these, one kind or two or more kinds can be used in combination. Among these, solid trifunctional epoxy resins, cresol novolac type epoxy resins, and the like are preferably used.

  In addition, 150-3000 g / eq is preferable, as for the epoxy equivalent of a solid epoxy resin at room temperature, 160-2500 g / eq is more preferable, and 170-2000 g / eq is especially preferable.

  The softening point of the epoxy resin that is solid at room temperature is preferably about 40 to 120 ° C, more preferably about 50 to 110 ° C, and particularly preferably about 60 to 100 ° C. When the softening point is within the above range, tackiness of the curable resin composition can be suppressed, and the softening point can be easily handled.

  Moreover, in the curable resin composition, the blending amount of the curable resin component described above can be appropriately set according to the form of the curable resin composition to be used.

  For example, in the case of a liquid curable resin composition, the blending amount of the curable resin component is preferably 10% by weight or more, more preferably 15% by weight or more in the curable resin composition. It is preferably 20% by weight or more, more preferably 25% by weight or more, still more preferably 30% by weight or more, and particularly preferably 35% by weight or more. Further, it is preferably less than 100% by weight, more preferably 95% by weight or less, further preferably 90% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. Is still more preferable, and it is especially preferable that it is 55 weight% or less.

  In the case of a solid curable resin composition, the amount of the curable resin component in the curable resin composition is preferably 5% by weight or more, and preferably 10% by weight or more. More preferably, it is more preferably 15% by weight or more, and particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, still more preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable that it is 55% by weight or less.

  When the blending amount of the curable resin component in the curable resin composition is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41 can be sufficiently secured.

(Ii) Film-forming resin component As described above, when a solid resin is used as the curable resin composition, in addition to the curable resin component, the film-forming resin is further included in the curable resin composition. A constitution containing a resin component is preferred.

  Such a film-forming resin component is not particularly limited as long as it is soluble in an organic solvent and has a film-forming property alone, and is any one of a thermoplastic resin or a thermosetting resin. Can also be used, and these can also be used in combination.

  Specifically, the film-forming resin component is not particularly limited. For example, (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin , Polypropylene resin, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, Examples include acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, nylon, and the like. In combination it can be used. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, polyamide resins and polyimide resins are preferable.

  In this specification, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a co-polymerization of (meth) acrylic acid and its derivatives and other monomers. Means coalescence. Here, the expression “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.

  The (meth) acrylic resin is not particularly limited. For example, polyacrylic acid such as polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and polyacrylic acid-2-ethylhexyl. Acid ester, polymethyl methacrylate, polyethyl methacrylate, polymethacrylate such as polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile- Butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methacryl Methyl-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile 2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer Examples thereof include a polymer and an ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer, and one or more of these can be used in combination. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable.

  Further, the skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, and biphenyl type.

  The polyimide resin is not particularly limited as long as it has an imide bond in the repeating unit. For example, the polyimide resin is obtained by reacting diamine and acid dianhydride and heating and dehydrating and ring-closing the resulting polyamic acid. Can be mentioned.

  Examples of the diamine include, but are not limited to, aromatics such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-p-phenylenediamine. Examples include diamines and siloxane diamines such as 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane, and one or more of these can be used in combination. .

  Examples of the acid dianhydride include 3,3,4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like. One kind or a combination of two or more kinds can be used.

  The polyimide resin may be either soluble or insoluble in the solvent, but it is easy to varnish when mixed with other components (curable resin component), and is a solvent because it is easy to handle. Soluble ones are preferred. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The weight average molecular weight of the film-forming resin is not particularly limited, but is preferably about 8,000 to 1,000,000, more preferably about 8,500 to 950,000, and 9,000 to More preferably, it is about 900,000. When the weight average molecular weight of the film-forming resin is within the above range, the film-forming property can be improved, and the fluidity of the resin composition layer 11 before curing can be suppressed.

  In addition, the weight average molecular weight of film-forming resin can be measured by GPC (gel permeation chromatography), for example.

  As the film-forming resin component, commercially available products can be used, and various additives such as plasticizers, stabilizers, antistatic agents and pigments can be used as long as the effects of the present invention are not impaired. What was blended can also be used.

  Moreover, in the curable resin composition, the blending amount of the film-forming resin component described above can be appropriately set according to the form of the curable resin composition to be used.

  For example, in the case of a solid curable resin composition, the blending amount of the film-forming resin component is preferably 5% by weight or more and preferably 10% by weight or more in the curable resin composition. Is more preferable, and it is further more preferable that it is 15 weight% or more. Further, it is preferably 50% by weight or less, more preferably 45% by weight or less, and further preferably 40% by weight or less. When the blending amount of the film-forming resin component is within the above range, the fluidity of the curable resin composition before melting can be suppressed, and the resin composition layer (conductive connection material) 11 can be easily handled. It becomes.

(Iii) Compound having flux function As described above, it is preferable that the curable resin composition further includes a flux function in addition to the curable resin component.

  The compound having the flux function has an action of removing the oxide films formed on the surfaces of the terminals 21 and 41 and the metal layer 12. Therefore, when such a compound is contained in the curable resin composition, an oxide film is formed on the surfaces of the terminal 21 and the metal layer 12 as described in detail in the connection method between terminals described later. Even if it is, the oxide film can be reliably removed by the action of this compound. As a result, the molten metal layer 12 aggregates on the surfaces of the terminals 21 and 41 with higher selectivity.

  Although it does not specifically limit as a compound which has such a flux function, For example, the compound which has a phenolic hydroxyl group and / or a carboxyl group is used preferably.

  Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol AF, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Lumpur F novolak resins, resins containing phenolic manufactured hydroxyl group, such as bisphenol A novolac resins. Can be used singly or in combination of two or more of them.

  Examples of the compound having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol trislimitate, etc. Species or a combination of two or more can be used.

The aliphatic carboxylic acid is not particularly limited, for example, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, Methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, pimelic acid, etc. Two or more kinds can be used in combination. Among these, the following formula (1):
_{HOOC- (CH 2) n -COOH (} 1)
(In Formula (1), n is an integer of 1-20.)
Of these, adipic acid, sebacic acid, and dodecanedioic acid are more preferably used.

  The structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or the following formula (3) is preferable.

［式中、Ｒ¹〜Ｒ⁵は、それぞれ独立して、１価の有機基であり、Ｒ¹〜Ｒ⁵の少なくとも一つは水酸基である。］

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

［式中、Ｒ⁶〜Ｒ²⁰は、それぞれ独立して、１価の有機基であり、Ｒ⁶〜Ｒ²⁰の少なくとも一つは水酸基またはカルボキシル基である。］

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

  Examples of such aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platonic acid, pyromellitic acid, meritic acid, and xylic acid. , Hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6 -Dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3 , Naphthoic acid derivatives such as 5--2-dihydroxy-2-naphthoic acid, phenolphthaline, diphenolic acid, etc. The recited may be used singly or in combination of two or more of them.

  The compound having such a flux function exhibits an action of removing an oxide film on the surface of the metal layer 12 and the terminals 21 and 41 so that the metal layer 12 and the terminals 21 and 41 can be electrically connected, and is cured. It preferably has a function as a curing agent for curing the curable resin component, that is, a functional group capable of reacting with the curable resin component.

  Such a functional group is appropriately selected according to the type of the curable resin component. For example, when the curable resin component is an epoxy resin, a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group. Is mentioned. The compound having such a flux function removes the oxide film formed on the surfaces of the metal layer 12 and the terminals 21 and 41 when the curable resin composition is melted to enhance the wettability of these surfaces, and the connection portion 81. Can be easily formed and the terminals 21 and 41 can be electrically connected. Furthermore, after the electrical connection between the terminals 21 and 41 is completed by the connecting portion 81, this compound acts as a curing agent and is added to the curable resin component to increase the elastic modulus or Tg of the resin. To demonstrate. Therefore, when a compound having such a flux function is used as the flux, flux cleaning is unnecessary, and the occurrence of ion migration due to the remaining flux can be suppressed or prevented accurately.

  Examples of the compound having such a function and having a flux function include compounds having at least one carboxyl group. For example, when the curable resin component is an epoxy resin, examples thereof include aliphatic dicarboxylic acids and compounds having a carboxyl group and a phenolic hydroxyl group.

  Although it does not specifically limit as said aliphatic dicarboxylic acid, The compound which two carboxyl groups couple | bonded with the aliphatic hydrocarbon group is mentioned. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

  Examples of such aliphatic dicarboxylic acids include compounds in which n is an integer of 1 to 20 in the formula (1). When n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of adhesion, the elastic modulus after curing of the curable resin composition, and the glass transition temperature becomes good. In particular, n is preferably 3 or more from the viewpoint that the increase in the elastic modulus after curing of the curable resin composition can be suppressed and the adhesion with an adherend such as the interposer 30 can be improved. From the viewpoint of suppressing the decrease in elastic modulus and further improving the connection reliability, n is preferably 10 or less.

  Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, and tetradecanedioic acid. Pentadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid and the like. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is more preferable.

  Further, examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxy. Benzoic acid derivatives such as benzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2 -Naphthoic acid derivatives such as naphthoic acid, phenolphthaline, diphenolic acid and the like. Of these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthaline and gentisic acid are more preferable.

  The compounds having the flux function as described above may be used alone or in combination of two or more.

  In addition, since any compound easily absorbs moisture and causes voids, in the present invention, it is preferably dried in advance before use.

  Content of the compound which has a flux function can be suitably set according to the form of the resin composition to be used.

  For example, when the resin composition is liquid, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, more preferably 3% by weight with respect to the total weight of the curable resin composition. % Or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  In the case of a solid resin composition, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more based on the total weight of the curable resin composition, 3% by weight or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  When the content of the compound having the flux function is within the above range, the oxide film formed on the surfaces of the metal layer 12 and the terminals 21 and 41 can be surely removed so as to be electrically joined. Furthermore, when the resin composition is a curable resin composition, it can be efficiently added to the curable resin component at the time of curing to increase the elastic modulus or Tg of the curable resin composition. Moreover, generation | occurrence | production of the ion migration resulting from the compound which has an unreacted flux function can be suppressed.

(Iv) Curing Agent The curing agent other than the compound having a flux function is not particularly limited, and examples thereof include phenols, amines, and thiols. Such a hardening | curing agent can be suitably selected according to the kind etc. of curable resin component. For example, when an epoxy resin is used as the curable resin component, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (eg heat resistance, moisture resistance, etc.) are obtained. In view of the above, it is preferable to use a phenol as a curing agent, and a bifunctional or higher functional phenol is more preferably used in terms of excellent physical properties after curing of the curable resin component. In addition, such a hardening | curing agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  Examples of phenols include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolac resin, cresol novolac resin, etc. Species or a combination of two or more can be used. Among these, a phenol novolac resin and a cresol novolac resin are preferable from the viewpoints of good melt viscosity, reactivity with an epoxy resin, and excellent physical properties after curing.

  In addition, in the curable resin composition, the amount of the curing agent described above is such that the type of the curable resin component and the curing agent to be used, and the compound having a flux function have a functional group that functions as a curing agent. It is set as appropriate depending on the type of group and the amount used.

  For example, when an epoxy resin is used as the curable resin, the content of the curing agent is preferably about 0.1 to 50% by weight with respect to the total weight of the curable resin composition, 0.2 to 40 It is more preferably about wt%, and further preferably about 0.5 to 30 wt%. When the content of the curing agent is within the above range, the electrical connection strength and the mechanical adhesive strength of the connection portion 81 formed between the terminals 21 and 41 can be sufficiently ensured.

(V) Curing accelerator As described above, a curing accelerator can be further added to the curable resin composition. Thereby, a curable resin composition can be hardened reliably and easily.

  Although it does not specifically limit as a hardening accelerator, For example, imidazole, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2- Phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4 Diamino-6- [2′-methylimidazolyl (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl (1 ′)]-ethyl-s-triazine, 2 , 4-Diamino-6- [2'-ethyl-4-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl (1')]-ethyl -Isocyanuric acid adduct of s-triazine, isocyanuric acid adduct of 2-phenylimidazole, isocyanuric acid adduct of 2-methylimidazole, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl- Examples include imidazole compounds such as 5-hydroxymethylimidazole, and one or more of these may be used in combination. Kill.

  Moreover, in the curable resin composition, the blending amount of the above-described curing accelerator can be appropriately set according to the type of the curing accelerator to be used.

  For example, when an imidazole compound is used, the amount of the imidazole compound is preferably 0.001% by weight or more, more preferably 0.003% by weight or more in the curable resin composition, More preferably, it is 0.005% by weight or more. Further, it is preferably 1.0% by weight or less, more preferably 0.7% by weight or less, and further preferably 0.5% by weight or less. When the blending amount of the imidazole compound is less than the lower limit, depending on the type of the curing accelerator to be used, the effect as the curing accelerator may not be sufficiently exhibited, and the curable resin composition may not be sufficiently cured. . Moreover, when the compounding quantity of an imidazole compound exceeds the said upper limit, before the hardening of a curable resin composition is completed, the metal layer 12 of a molten state cannot fully move to the surface of the terminals 21 and 41, but it becomes an insulating area | region. There is a possibility that a part of the metal layer 12 remains in the sealing layer 80 to be formed, and the insulation in the sealing layer 80 cannot be sufficiently secured.

(Vi) Silane Coupling Agent As described above, a silane coupling agent can be further added to the curable resin composition.

  Although it does not specifically limit as a silane coupling agent, For example, an epoxy silane coupling agent, an aromatic containing aminosilane coupling agent, etc. are mentioned. By adding such a silane coupling agent, it is possible to improve the adhesion between the joining member (adhered body) such as the interposer 30 and the semiconductor chip 20 and the curable resin composition.

  In addition, such a silane coupling agent may be used individually by 1 type, and can also be used in combination of 2 or more type.

  Moreover, in the curable resin composition, the blending amount of the silane coupling agent described above is appropriately set according to the types of the joining member, the curable resin component, and the like. For example, in the curable resin composition, it is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, and further preferably 0.1% by weight or more. Further, it is preferably 2% by weight or less, more preferably 1.5% by weight or less, and further preferably 1% by weight or less.

  In addition to the components described above, the curable resin composition further contains a plasticizer, a stabilizer, a tackifier, a lubricant, an antioxidant, a filler, an antistatic agent, a pigment, and the like. Also good.

  Moreover, the curable resin composition as described above can be prepared by mixing and dispersing the above components. The mixing method and dispersion method of each component are not specifically limited, It can mix and disperse | distribute by a conventionally well-known method.

  Moreover, you may prepare the liquid curable resin composition by mixing each said component in a solvent or under absence of solvent. The solvent used at this time is not particularly limited as long as it is inert to each component. For example, acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), diisobutyl ketone (DIBK), cyclohexanone, Ketones such as diacetone alcohol (DAA), aromatic hydrocarbons such as benzene, xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, Cellosolves such as methyl cellosolve acetate and ethyl cellosolve acetate, N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), dimethylformamide (DMF), dibasic acid ester (DBE), 3 Ethyl ethoxypropionate (EEP), dimethyl carbonate (DMC) and the like, can be used singly or in combination of two or more of them. Moreover, it is preferable that the usage-amount of a solvent is an quantity from which the solid content concentration of the component mixed with the solvent will be 10 to 60 weight%.

(B) Thermoplastic resin composition The thermoplastic resin composition contains a thermoplastic resin component and softens at a predetermined temperature.

  In addition to the thermoplastic resin component, the thermoplastic resin composition may contain a compound having a flux function, a film-forming resin, a silane coupling agent, and the like, if necessary.

(I) Thermoplastic resin component The thermoplastic resin component is not particularly limited. For example, vinyl acetate, polyvinyl alcohol resin, polyvinyl butyral resin, vinyl chloride resin, (meth) acrylic resin, phenoxy resin, polyester resin, polyimide Resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, acrylic resin, styrene resin, polyethylene resin, polypropylene resin, polyamide resin, cellulose resin, isobutylene resin, vinyl ether resin, liquid crystal polymer resin, polyphenylene sulfide resin, polyphenylene ether resin, Polyethersulfone resin, polyetherimide resin, polyetheretherketone resin, polyurethane resin, styrene-butadiene-styrene copolymer, styrene- Tylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer And polyvinyl acetate. These thermoplastic resin components may be a single polymer, or may be a copolymer of at least two of these thermoplastic resin components.

  The softening point of the thermoplastic resin component is not particularly limited, but is preferably 10 ° C. or more lower than the melting point of the metal layer 12 constituting the conductive connection sheet 1, more preferably 20 ° C. or more, and more preferably 30 ° C. or less. Further preferred.

  Further, the decomposition temperature of the thermoplastic resin component is not particularly limited, but is preferably higher by 10 ° C. or higher than the melting point of the metal layer 12, more preferably higher by 20 ° C., and further preferably higher by 30 ° C. or higher.

  In the thermoplastic resin composition, the amount of the thermoplastic resin component described above is appropriately set according to the form of the thermoplastic resin composition to be used.

  For example, in the case of a liquid thermoplastic resin composition, the blending amount of the thermoplastic resin component is preferably 10% by weight or more, more preferably 15% by weight or more in the thermoplastic resin composition. It is preferably 20% by weight or more, more preferably 25% by weight or more, still more preferably 30% by weight or more, and particularly preferably 35% by weight or more. Further, it is preferably 100% by weight or less, more preferably 95% by weight or less, still more preferably 90% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. Is still more preferable, and it is especially preferable that it is 55 weight% or less.

  In the case of a solid thermoplastic resin composition, the amount of the thermoplastic resin component is preferably 5% by weight or more, and preferably 10% by weight or more in the thermoplastic resin composition. More preferably, it is more preferably 15% by weight or more, and particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, still more preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable that it is 55% by weight or less.

  When the blending amount of the thermoplastic resin component in the thermoplastic resin composition is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41 can be sufficiently ensured.

(Ii) Other additives In addition to thermoplastic resin components, compounds having a flux function, film-forming resins, silane coupling agents, plasticizers, stabilizers, tackifiers, lubricants, antioxidants, filling An agent, an antistatic agent, a pigment, and the like may be blended, but these can be the same as those described in the above-mentioned “(a) curable resin composition”. Further, the same applies to preferred compounds and their blending amounts.

  In addition, in this invention, it is preferable to use a curable resin composition as a resin composition among what was mentioned above. Among them, the epoxy resin is 10 to 90% by weight, the curing agent is 0.1 to 50% by weight, the film-forming resin is 5 to 50% by weight, and the compound having a flux function is 1 to 50% by weight with respect to the total weight of the resin composition. More preferably, it contains The epoxy resin is 20 to 80% by weight, the curing agent is 0.2 to 40% by weight, the film-forming resin is 10 to 45% by weight, and the compound having a flux function is 2 to 40% by weight with respect to the total weight of the resin composition. More preferably, those containing The epoxy resin is 35 to 55% by weight, the curing agent is 0.5 to 30% by weight, the film-forming resin is 15 to 40% by weight, and the compound having a flux function is 3 to 25% by weight with respect to the total weight of the resin composition. Those containing are particularly preferred. As a result, it is possible to sufficiently ensure the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41.

  In the conductive connection sheet 1, the blending amount of the curable resin composition or the thermoplastic resin composition described above, that is, the occupation amount of the resin composition layers 11 and 13 is appropriately determined according to the form of the resin composition to be used. Is set.

  Specifically, for example, in the case of a liquid resin composition, it is preferably 10 parts by weight or more, more preferably 20 parts by weight or more, and 25 parts by weight with respect to 100 parts by weight of the conductive connection sheet. More preferably, it is the above. Further, it is preferably 95 parts by weight or less, more preferably 80 parts by weight or less, and further preferably 75 parts by weight or less.

  In the case of a solid resin composition, it is preferably 10 parts by weight or more, more preferably 15 parts by weight or more, and more preferably 20 parts by weight or more with respect to 100 parts by weight of the conductive connection sheet. Is more preferable. Further, it is preferably 95 parts by weight or less, more preferably 80 parts by weight or less, and further preferably 75 parts by weight or less.

  When the blending amount of the resin composition in the conductive connection sheet 1, that is, the occupation amount of the resin composition layers 11 and 13 is within the above range, the electrical connection strength and mechanical adhesion between the connection members such as the interposer 30 and the semiconductor chip 20 It becomes possible to ensure sufficient strength.

  Moreover, the thickness of the resin composition layer 11 in the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, and further preferably 5 μm or more. The thickness of the resin composition layer 11 is preferably 200 μm or less, more preferably 150 μm or less, and further preferably 100 μm or less. When the thickness of the resin composition layer 11 is within the above range, the gap between the adjacent terminals 21 and 41 can be sufficiently filled with the resin composition to form the sealing layer 80. Sufficient mechanical adhesive strength can be imparted to the sealing layer 80.

  In addition, in this embodiment, although the conductive connection sheet 1 is a structure provided with two layers, the 1st resin composition layer 11 and the 2nd resin composition layer 13, the 2nd resin composition layer 13 is What is necessary is just the thing of the structure similar to the 1st resin composition layer 11 mentioned above, the thing of the same composition as the 1st resin composition layer 11 may be sufficient, and the thing of a different composition may be sufficient. .

  Moreover, the conductive connection sheet 1 should just be provided with the at least 1 layer of resin composition layer, and even if any one of the 1st resin composition layer 11 and the 2nd resin composition layer 13 is abbreviate | omitted. Moreover, the thing of the structure provided with the 3rd and 4th resin composition layer different from the 1st resin composition layer 11 and the 2nd resin composition layer 13 may be sufficient.

[Metal layer 12]
The metal layer (metal foil layer) 12 is a layer composed of a metal foil composed of a low melting point metal material.

  The metal layer 12 melts when heated to a melting point or higher, and the oxide film formed on the surface of the metal layer 12 is removed by the action of the compound having a flux function contained in the resin composition layer 11. Therefore, the wettability of the molten metal layer 12 is improved. Therefore, in the connection method between terminals, which will be described later, the molten metal layer 12 selectively aggregates on the surface of the terminal 21, and finally a connection portion 81 is formed on the surface of the terminal by the solidified product. The

  Here, in the present invention, a low melting point metal material having a melting point of 330 ° C. or lower, preferably 300 ° C. or lower, more preferably 280 ° C. or lower, further preferably 260 ° C. or lower is appropriately selected. Thereby, in the connection between the terminals 21 and 41 in the semiconductor device 10, it is possible to accurately suppress or prevent the various members of the semiconductor device 10 from being damaged by the thermal history.

  Further, from the viewpoint of ensuring the heat resistance of the semiconductor device 10 after the connection portion 81 is formed, that is, after the connection between the terminals 21 and 41, the low melting point metal material has a melting point of 100 ° C. or higher, preferably 110 ° C. As described above, a material having a temperature of 120 ° C. or higher is appropriately selected.

  Note that the melting point of the low melting point metal material, that is, the metal layer 12, can be measured by a differential scanning calorimeter (DSC).

  Such a low-melting-point metal material has the above-described melting point, and further, as long as the oxide film formed on the surface of the metal layer 12 can be removed by the flux action of the compound having a flux function. For example, tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe) , An alloy of at least two kinds of metals selected from the group consisting of aluminum (Al), gold (Au), germanium (Ge) and copper (Cu), or a simple substance of tin.

  Among these alloys, as a low melting point metal material, considering its melting temperature, mechanical properties, etc., an Sn—Pb alloy, an Sn—Bi alloy that is a lead-free solder, an Sn—Ag—Cu alloy It is preferably composed of an alloy containing Sn, such as an alloy, an Sn—In alloy, or an Sn—Ag alloy.

  When an Sn—Pb alloy is used as the low melting point metal material, the tin content is preferably 30% by weight or more and less than 100% by weight, and preferably 35% by weight or more and less than 100% by weight. More preferably, it is more preferably 40% by weight or more and less than 100% by weight. When lead-free solder is used, the content of tin is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, and more preferably 25% by weight or more and 100% by weight. More preferably, it is less than% by weight.

  Specifically, for example, Sn-37Pb (melting point 183 ° C.) is used as an Sn—Pb alloy, and Sn-3.0Ag-0.5Cu (melting point 217 ° C.), Sn-3.5Ag is used as a lead-free solder. (Melting point 221 ° C), Sn-58Bi (melting point 139 ° C), Sn-9.0Zn (melting point 199 ° C), Sn-3.5Ag-0.5Bi-3.0In (melting point 193 ° C), Au-20Sn (melting point) 280 ° C.).

  Further, the thickness of the metal layer 12 is not particularly limited, but is appropriately set according to the thickness and size of the connection portion 81 to be formed on the surface of the terminal 41. That is, by setting the thickness of the metal layer 12 to be thin, the thickness of the connection portion 81 to be formed is reduced. On the contrary, it is formed by setting the thickness of the metal layer 12 to be thick. The thickness of the connecting portion 81 is increased.

  For example, as in this embodiment, in the connection between the terminals 21 and 41 in the semiconductor device 10, the thickness of the metal layer 12 is preferably 0.5 μm or more, and more preferably 0.8 μm or more. 1 μm or more is more preferable, 100 μm or less is preferable, 50 μm or less is more preferable, and 20 μm or less is more preferable. If the thickness of the metal layer 12 is less than the lower limit, unconnected terminals 21 and 41 may be generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, adjacent terminals due to surplus metal material. 21 and 41 may cause a bridge due to the connecting portion 81 to cause a short circuit. By setting the thickness of the metal layer 12 within such a range, the connection portion 81 having an arbitrary thickness can be formed.

  Further, in the conductive connection sheet 1, the amount of the low melting point metal material described above, that is, the occupation amount of the metal layer 12 is preferably 5% by weight or more in the conductive connection sheet 1, and is 20% by weight or more. More preferably, it is more preferably 30% by weight or more. Moreover, it is preferable that it is less than 100 weight%, It is more preferable that it is 80 weight% or less, It is further more preferable that it is 70 weight% or less.

  If the blending amount of the metal material in the conductive connection sheet 1, that is, the occupation amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 21 and 41 are generated due to a shortage of the metal material constituting the metal layer 12. If the upper limit is exceeded, a surplus of the metal material may cause bridging by the connecting portion 81 between the adjacent terminals 21 and 41, thereby causing a short circuit.

  Alternatively, the occupation amount of the metal layer 12 may be defined by a volume ratio with respect to the conductive connection sheet 1. For example, the occupation amount (blending amount) of the metal layer 12 is preferably 1% by volume or more, more preferably 5% by volume or more, and more preferably 10% by volume or more with respect to the conductive connection sheet 1. Further preferred. Moreover, it is preferable that it is 90 volume% or less, It is more preferable that it is 80 volume% or less, It is further more preferable that it is 70 volume% or less. If the occupied amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 21 and 41 may be generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, the metal layer 12 is adjacent due to surplus metal material. There is a possibility that a bridge is formed between the terminals 21 and 41 by the connecting portion 81 and a short circuit occurs.

  As shown in FIG. 2 (c), the metal layer 12 having such a structure is provided in a layered form so as to be interposed between the resin composition layer 11 and the resin composition layer 13. As shown in FIG. 2A, the shape (overall shape) has a circular shape corresponding to the shape of the semiconductor wafer 100 to which the conductive connection sheet 1 is attached. And in the manufacturing method of the semiconductor device mentioned later, when the conductive connection sheet 1 is arrange | positioned on the conductive connection sheet 1 (attached), the positioning mark which the several semiconductor chip 20 built in the semiconductor wafer 100 has (First positioning mark) A defect portion 121 having a circular shape is provided so as to correspond to a position overlapping with 455. In other words, the layered metal layer 12 has such a shape that it is punched in a circular shape in the thickness direction at the two missing portions 121 that overlap the two positioning marks 455 of each semiconductor chip 20.

  The reason why the defect portion 121 is provided so as to correspond to the position overlapping the positioning mark 455 as described above will be described in detail when the method for manufacturing a semiconductor device of the present invention is described.

  Moreover, the formation method of the metal layer 12 having the defect portion 121 is not particularly limited, but a planar metal foil is formed by rolling from a lump such as an ingot, and then the region where the defect portion 121 of the metal foil is to be formed is formed. Examples include a method of punching, a method of forming the defect 121 by etching, a method of forming by vapor deposition, sputtering, plating, etc. by using a shielding plate or a mask having a shape corresponding to the shape of the defect 121. It is done.

  The form of the conductive connection sheet 1 as described above is appropriately set according to the form of the resin composition constituting the resin composition layer 11 and the like.

  For example, when the curable resin composition is in a liquid state, the metal layer 12 is prepared, the curable resin composition is applied to both surfaces thereof, and this is semi-cured (B-staged) at a predetermined temperature. The material layer 11 can be used as the conductive connection sheet 1. In addition, a curable resin composition is applied on a release substrate such as a polyester sheet, and this is formed into a film for the purpose of semi-curing (B-stage) at a predetermined temperature, and then peeled off from the release substrate to form a metal. A film that is laminated to the layer 12 can be used as the conductive connection sheet 1.

  When the resin composition is solid, a resin composition varnish dissolved in an organic solvent is applied onto a release substrate such as a polyester sheet and dried at a predetermined temperature to form a resin composition layer 11. Then, the laminated metal layer 12 can be used as the conductive connection sheet 1. Moreover, what formed the metal layer 12 on the resin composition layer 11 obtained by carrying out similarly to the above using methods, such as vapor deposition, and made it into the film form can also be provided as the electrically conductive connection sheet 1. FIG.

  The metal layer 12 may be embossed for the purpose of improving the adhesion with the resin composition layer 11.

  The thickness of the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, further preferably 5 μm or more, and preferably 200 μm or less. 150 μm or less is more preferable, and 100 μm or less is further preferable. When the thickness of the conductive connection sheet 1 is within the above range, the gap between the adjacent terminals 21 and 41 can be sufficiently filled with the sealing layer 80 made of the resin composition. In addition, the mechanical adhesive strength after the resin component is cured or solidified and the electrical connection between the opposing terminals can be sufficiently ensured. In addition, it is possible to manufacture a connection terminal according to the purpose and application.

  In the present embodiment, when an oxide film is formed on the metal layer 12 and the terminal 21, the first resin composition layer 11 and the second resin composition are used for the purpose of removing the oxide film. Although it has been described that the resin composition constituting the layer 13 preferably contains a compound having a flux function, the resin composition contains an antioxidant instead of the compound having a flux function. It may be.

[Method for producing conductive connection sheet]
Next, the conductive connection sheet 1 of the first embodiment configured as described above can be manufactured, for example, by the following manufacturing method.

(I) When the resin component is liquid at 25 ° C. When the resin composition constituting the first resin composition layer 11 and the second resin composition layer 13 is liquid at 25 ° C. A metal layer 12 having a portion 121 is prepared.

  The metal layer 12 is manufactured by, for example, forming a metal foil formed in a flat shape by rolling from a lump such as an ingot, and then punching or etching a region where the defect portion 121 of the metal foil is to be formed. can do.

  Next, by impregnating the metal layer 12 in a liquid resin composition, the liquid resin composition is adhered to both surfaces of the metal layer 12, and then the resin composition is semi-cured at a predetermined temperature. The conductive connection sheet 1 in which the resin composition layers 11 and 13 are formed on both surfaces of the metal layer 12 can be manufactured.

  When the thickness of the resin composition layers 11 and 13 to be formed needs to be controlled, the metal layer 12 immersed in the liquid resin composition is passed through a bar coater having a certain gap, By spraying the liquid resin composition onto the metal layer 12 with a spray coater or the like, the resin composition layers 11 and 13 having a target thickness can be easily manufactured.

(Ii) When the resin component forms a film at 25 ° C. When the resin composition constituting the first resin composition layer 11 and the second resin composition layer 13 forms a film at 25 ° C., A release substrate such as a polyester sheet is prepared.

  Next, a varnish obtained by dissolving the resin composition in an organic solvent is applied onto a release substrate, and then dried at a predetermined temperature to form a film-like resin composition.

  Next, two film-shaped resin compositions obtained by the above steps are prepared, and the metal layer 12 having the defect 121 prepared in advance is sandwiched between these film-shaped resin compositions. The conductive connection sheet 1 in which the resin composition layers 11 and 13 are formed on both surfaces of the metal layer 12 can be manufactured by laminating with a heat roll.

  In addition, when using the wound metal layer 12, the metal layer 12 is used as a base substrate, and the above-described film-shaped resin composition is laminated on both sides of the metal layer 12 using a hot roll. Thus, the wound conductive connection sheet 1 can be obtained.

  Furthermore, when using the wound metal layer 12, the varnish obtained as described above is directly applied to both surfaces of the metal layer 12, and then the solvent is stripped and dried to form the wound metal layer 12. The conductive connection sheet 1 can be obtained.

  In addition, the manufacturing method of an electroconductive connection sheet is not limited to the method mentioned above, The manufacturing method of an electroconductive connection sheet can be suitably selected according to the objective and a use.

<Method for Manufacturing Semiconductor Device>
Using the conductive connection sheet 1 of the first embodiment as described above, the semiconductor device 10 is manufactured by applying, for example, the following semiconductor device manufacturing method (semiconductor device manufacturing method of the present invention). .

  FIG. 3 is a schematic diagram showing an example of a semiconductor wafer applied to the method for manufacturing a semiconductor device using the conductive connection sheet shown in FIG. 2 (FIG. 3A is a plan view, and FIG. 3B is a plan view). FIG. 3C is a partial enlarged plan view, FIG. 3C is a cross-sectional view taken along the line CC in FIG. 3B, and FIGS. 4 to 7 are shown in FIG. 1 using the method for manufacturing a semiconductor device of the present invention. It is a figure for demonstrating the method to manufacture a semiconductor device. In FIG. 3A, the semiconductor chip 20 formed in the semiconductor wafer 100 is hatched for easy understanding, and further, in order to make the semiconductor chip 20 easy to understand, the semiconductor wafer 100 includes a semiconductor chip 20. Although the chip 20 is largely illustrated, more semiconductor chips 20 are formed in the actual semiconductor wafer 100. Further, in the following description, the front side of the sheet in FIGS. 3A, 3B to 6A, 6B, and the upper side in FIGS. 3C to 6C, FIG. 3 (a), 3 (b) to 6 (a) and 6 (b), and the lower side in FIGS. 3 (c) to 5 (c) and FIG. Say "below".

  In the manufacturing method of the semiconductor device 10 using the conductive connection sheet 1 described below, the conductive connection is provided on the surface side where the terminals 21 of the semiconductor wafer 100 in which a plurality of semiconductor chips (semiconductor elements) 20 are formed is provided. An affixing step for affixing the sheet 1, an individualization step for obtaining the semiconductor chip 20 to which the conductive connection sheet 1 is affixed by cutting the semiconductor wafer 100 into pieces, and an affixing of the conductive connection sheet 1 The semiconductor element 20 in which the conductive connection sheet 1 is affixed on the surface on which the pick-up process for picking up the semiconductor chip 20 and the terminal (second terminal) 41 of the interposer (opposing electronic component) 30 are provided. The disposing step of disposing the conductive connection sheet 1 between them, the melting point of the metal material contained in the metal layer 12, and more than, The resin composition layers 11 and 13 comprising the resin composition has a heating step of heating the conductive connection sheet 1 to a deformable temperature, and a curing (hardening) step of curing or solidifying the resin composition.

  In addition, when forming the connection part 81 and the sealing layer 80, when the resin composition layers 11 and 13 with which the electroconductive connection sheet 1 is provided are comprised with a curable resin composition, it is comprised with a thermoplastic resin composition. In some cases, the formation method is slightly different. Therefore, hereinafter, the case where the resin composition layers 11 and 13 are made of a curable resin composition is referred to as a first manufacturing method, and the case where the resin composition layers 11 and 13 are made of a thermoplastic resin composition is referred to as a second manufacturing method. Separately described.

[First production method]
In the first manufacturing method in which the resin composition layers 11 and 13 provided in the conductive connection sheet 1 are formed of a curable resin composition, the terminals 21 of the semiconductor wafer 100 in which a plurality of semiconductor chips (semiconductor elements) 20 are formed are provided. A semiconductor chip 20 to which the conductive connection sheet 1 is attached is obtained by pasting the conductive connection sheet 1 on the provided surface side and cutting the semiconductor wafer 100 into pieces. A separation process [2], a pickup process [3] for picking up the semiconductor chip 20 to which the conductive connection sheet 1 is attached, and a terminal (second terminal) 41 of an interposer (opposing electronic component) 30 are provided. An arrangement step [4] of arranging the semiconductor element 20 having the conductive connection sheet 1 attached on the surface so that the conductive connection sheet 1 is interposed between them, A heating step [5] for heating the conductive connection sheet 1 at a temperature equal to or higher than the melting point of the genus layer 12 and at which the curing of the curable resin composition constituting the resin composition layers 11 and 13 is not completed; And a curing step [6] for completing the curing of the product.

Hereinafter, each process is explained in full detail.
[1] Pasting Step [1-1] First, a semiconductor wafer 100 in which a plurality of semiconductor chips 20 are fabricated as shown in FIG. 3 is prepared.

  In the present embodiment, the semiconductor wafer 100 is provided with a plurality of semiconductor chips 20 at substantially equal intervals in both the X-axis direction and the Y-axis direction shown in FIG. Therefore, the semiconductor chip 20 is built in the semiconductor wafer 100 so as to form a lattice shape in plan view.

  Between adjacent semiconductor chips 20, a plurality of parallel dicing lines 110 in the X-axis direction and a plurality of parallel dicing lines 115 orthogonal to the dicing lines 110 in the Y-axis direction are provided. Is formed.

  Further, each semiconductor chip 20 has nine terminals 21 and two positioning marks 455 as shown in FIGS. 3B and 3C. As described above, the nine terminals 21 are arranged in a lattice pattern on the upper surface of the semiconductor chip 20, and the two positioning marks 455 are formed of the first side 451 and the fourth side of the terminal region 411. One each is provided at the intersection (corner) where the side 454 intersects and at the intersection (corner) where the second side 452 and the third side 453 intersect, and is arranged outside the vertices.

  [1-2] Next, the conductive connection sheet 1 is disposed on the surface side of the semiconductor chip (semiconductor element) 20 formed on the semiconductor wafer 100 where the terminals 21 are provided (see FIG. 4).

  At this time, in the conductive connection sheet 1 of the present embodiment, the metal layer 12 has a defect portion (first portion) that is missing at a position overlapping the positioning mark (first positioning mark) 455 of the semiconductor chip 20 included in the semiconductor wafer 100. The missing part) 121 is provided. In other words, the positioning mark 455 has a configuration formed corresponding to each semiconductor chip 20 in which the semiconductor wafer 100 is formed.

  Therefore, when the conductive connection sheet 1 is arranged on the semiconductor wafer 100 in which the semiconductor chip 20 is formed, the positioning mark 455 and the defect portion 121 are opposed to each other in the thickness direction of the conductive connection sheet 1. Can overlap.

  Therefore, by maintaining this state, the conductive connection sheet 1 can be aligned with the semiconductor wafer 100. Furthermore, when the semiconductor chip 20 is viewed from the side where the terminals 21 are provided, the positioning mark 455 can be recognized via the conductive connection sheet 1.

  As described above, the conductive connection sheet 1 is provided on the surface side where the terminals 21 of the semiconductor wafer 100 in which the plurality of semiconductor chips 20 are formed using the positioning marks 455 and the defect portions 121. Can be aligned with excellent positional accuracy. That is, the conductive connection sheet 1 and the semiconductor wafer 100 are positioned with excellent positional accuracy.

  The positioning using the positioning marks 455 and the missing portions 121 can be performed by using at least two positioning marks 455 and at least two missing portions 121, but the positioning marks 455 are used. For example, as shown in FIGS. 4A and 4B, the defect portion 121 corresponds to the semiconductor chip 20 located at the right end portion and the left end portion of the semiconductor wafer 100, that is, the distal portion. It is preferable to use things. Thereby, the position accuracy of the conductive connection sheet 1 with respect to the semiconductor wafer 100 can be improved as compared with the case where the ones corresponding to the adjacent semiconductor chips 20, that is, the proximal ones are used.

  [1-3] Next, while maintaining the state where the conductive connection sheet 1 is aligned with the semiconductor wafer 100, the conductive connection sheet 1 is attached to the semiconductor wafer 100 (semiconductor chip 20) using an apparatus such as a roll laminator or a press. Thermocompression bonding is performed on the surface on the terminal 21 side. Thereby, since the resin composition layer 11 is in a molten state (deformable state), the terminals 21 protruding from the semiconductor wafer 100 (semiconductor chip 20) are embedded in the resin composition layer 11 ( (See FIG. 5 (c)).

  As a result, the conductive connection sheet 1 is attached to the surface of the semiconductor wafer 100 on which the terminals 21 are provided, with the defective portion 121 overlapping the positioning mark 455 with excellent positional accuracy.

  That is, the conductive connection sheet 1 is affixed to the surface of the semiconductor wafer 100 on which the plurality of semiconductor chips 20 are formed, on which the terminals 21 are provided, using the positioning marks 455 and the defect portions 121.

  In the present embodiment, the defect portion 121 has a circular shape in plan view, and is set to a size that includes the positioning mark 455 as shown in FIGS. Thereby, when the conductive connection sheet 1 is affixed to the semiconductor chip 20 so that the positioning mark 455 and the defect portion 121 overlap, the positioning mark 455 is reliably recognized via the conductive connection sheet 1. It becomes.

[2] Separation Step Next, the semiconductor wafer 100 to which the conductive connection sheet 1 is attached is divided into pieces.

  For example, as shown in FIG. 6C, the semiconductor wafer 100 is divided into cuts 118 along the dicing lines 110 and 115 by a dicing saw from the conductive connection sheet 1 side. Is performed by cutting the semiconductor wafer 100 to which the conductive connection sheet 1 is attached.

  For this cutting, using a dicing saw, for example, as shown in FIG. 6A, first, the X-axis direction is sequentially cut along the dicing line 115, and then the Y-axis direction. This is performed by sequentially cutting along the dicing line 110.

  By cutting along the dicing lines 110 and 115 in this way and dividing into pieces, the semiconductor chips 20 to which the plurality of conductive connection sheets 1 are attached are collectively formed.

  The separation of the semiconductor wafer 100 to which the conductive connection sheet 1 is attached is not limited to the case where a cut is made from the conductive connection sheet 1, and the semiconductor wafer 100 may be cut from the semiconductor wafer 100 side. Cuts may be made from both the wafer 100 side and the conductive connection sheet 1 side.

  Further, as the dicing apparatus used when making the cut, different apparatuses may be used when making the cut from the semiconductor wafer 100 side and the conductive connection sheet 1 side, or the same apparatus may be used. Good.

  6C, when the conductive connection sheet 1 is on the upper side, that is, the semiconductor wafer 100 to which the conductive connection sheet 1 is attached is placed face up and cut from the conductive connection sheet 1 side. When 118 is inserted, the metal layer 12 is positioned on the semiconductor wafer 100 as shown in FIG. Therefore, the position recognition of the dicing lines 110 and 115 by the dicing apparatus cannot be performed directly. Therefore, the positions of the dicing lines 110 and 115 with respect to the positioning marks 455 included in each semiconductor chip 20 are obtained in advance. As a result, even when the conductive connection sheet 1 is on the upper side, the position of the positioning mark 455 can be recognized by the dicing device via the defective portion 121, so that the positioning mark 455 is arranged. The position recognition of the dicing lines 110 and 115 can be indirectly performed based on the position information. That is, in this step [2], the positioning mark 455 also serves as a position recognition mark for recognizing the positions of the dicing lines 110 and 115.

  Further, when the semiconductor wafer 100 to which the conductive connection sheet 1 is attached is placed face down and a cut is made from the semiconductor wafer 100 side, the semiconductor wafer 100 is on the upper side. Here, infrared rays have a property of transmitting silicon. Therefore, since infrared rays are transmitted through the semiconductor wafer 100 by using infrared rays for the position recognition of the dicing lines 110 and 115 by the dicing apparatus, the position recognition of the dicing lines 110 and 115 can be directly performed. .

  By the pasting step [1] and the singulation step [2] as described above, the semiconductor element manufacturing method of the present invention is configured, and the terminal is obtained through these steps [1] and [2]. A plurality of semiconductor chips 20 each having the conductive connection sheet 1 attached to the surface side on which 21 is provided are collectively formed.

[3] Pickup Step Next, one of the semiconductor chips 20 to which the plurality of conductive connection sheets 1 are attached is picked up.

  Then, if necessary, the conductive connection sheet 1 is affixed so that the conductive connection sheet 1 of the semiconductor chip 20 to which the conductive connection sheet 1 is affixed and the surface on which the terminal 41 of the interposer 30 is provided. The direction of the attached semiconductor chip 20 is set. That is, the upper and lower surfaces of the semiconductor chip 20 to which the conductive connection sheet 1 is attached are reversed.

[4] Arrangement Step Next, the semiconductor chip 20 to which the conductive connection sheet 1 is attached is placed on the surface on which the terminals 41 of the interposer 30 are provided so that the conductive connection sheet 1 is interposed therebetween. Place (arrange) (see FIG. 7A).

  At this time, the semiconductor chip 20 and the interposer using the positioning mark (first positioning mark) 455 included in the semiconductor chip 20 and the positioning mark (second positioning mark) 456 included in the interposer 30. The semiconductor chip 20 and the interposer 30 are positioned so that the terminal 21 and the terminal 41 face each other along a direction perpendicular to the surface direction of the surface 30.

  Thereby, the one terminal 21 and the corresponding one terminal 41 are arranged on the straight line perpendicular to the surface direction in a one-to-one relationship through the conductive connection sheet 1. .

  In the positioning of such a configuration, as described in the above step [1], the conductive connection sheet 1 has the defect portion 121, and the defect portion 121 overlaps the positioning mark 455, so that the conductive connection sheet 1 is formed on the semiconductor chip. The positioning mark 455 can be recognized even if it is affixed to 20 (semiconductor wafer 100). Therefore, positioning of the semiconductor chip 20 and the interposer 30 can be performed with excellent accuracy.

  Note that the positioning of the semiconductor chip 20 and the interposer 30 using the positioning marks 455 and the positioning marks 456 is specifically performed as follows.

  That is, as shown in FIG. 1A, the two positioning marks 455 have an angle at which the first side 451 and the fourth side 454 intersect and an angle at which the second side 452 and the third side 453 intersect. Are provided one by one in the vicinity of each other, and two positioning marks 456 are formed so that the first side 451 and the second side 452 intersect with each other and the third side 453 and the fourth side 454 cross each other. When one each is provided in the vicinity of the corner, first, a straight line (line segment) A that virtually connects the two positioning marks 455 and a straight line (line segment) that virtually connects the two positioning marks 456. ) Draw B.

  Next, the midpoints of the straight line A and the straight line B are taken, and the semiconductor chip 20 is placed on the interposer 30 so that they overlap each other.

  Next, while maintaining this state, based on the position information (coordinates in the x-axis direction and the y-axis direction) of the positioning mark 455 and the positioning mark 456, the semiconductor chip 20 is placed in the surface direction with respect to the interposer 30. The semiconductor chip 20 and the interposer 30 are positioned by rotating along.

  After this positioning, the conductive connection sheet 1 may be thermocompression bonded to both the semiconductor chip 20 and the interposer 30 by thermocompression bonding to the terminal 41 side of the interposer 30.

[5] Heating Step Next, as shown in FIG. 7B, the conductive connection sheet 1 disposed between the semiconductor chip 20 and the interposer 30 is heated at a temperature equal to or higher than the melting point of the metal layer 12.

  The heating temperature may be equal to or higher than the melting point of the metal layer 12. For example, the range in which the metal material can move in the curable resin composition by adjusting the heating time such as shortening the heating time, that is, “curable resin”. The upper limit is not particularly limited as long as it is in the range where the curing of the composition is not completed.

  Specifically, the heating temperature is preferably 5 ° C. or more higher than the melting point of the metal layer 12, more preferably 10 ° C. or more, and even more preferably 20 ° C. or more. It is particularly preferable that the temperature be 30 ° C. or higher.

  More specifically, the heating temperature is appropriately set depending on the composition of the metal layer 12 and the curable resin composition to be used, etc., preferably 100 ° C. or higher, more preferably 130 ° C. or higher, The temperature is more preferably 140 ° C. or higher, and most preferably 150 ° C. or higher. The heating temperature is preferably 260 ° C. or lower, more preferably 250 ° C. or lower, and 240 ° C. or lower from the viewpoint of preventing thermal deterioration of the semiconductor chip 20 and interposer 30 to be connected. More preferably it is.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  At this time, when the compound having a flux function is included in the curable resin composition, even if an oxide film is formed on the surface of the metal layer 12 by the flux action of the compound having the flux function, It will be removed by the flux action. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal material is likely to be aggregated between the terminals 21 and 41 arranged opposite to each other.

  Further, even if an oxide film is formed on the surfaces of the terminals 21 and 41, this oxide film is also removed by the flux action of the compound having a flux function, and its wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal material is easily aggregated between the terminals 21 and 41 arranged to face each other.

  In the conductive connection sheet 1, the metal layer 12 has a layer shape, and the conductive connection sheet 1 does not include particles composed of a metal material. Therefore, a plurality of molten metal layers 12 are provided. When the material is divided into two parts and agglomerates on the surfaces of the terminals 21 and 41, it is possible to accurately suppress or prevent a part of them from remaining in the resin composition layers 11 and 13 without aggregating on the terminals 21 and 41. be able to. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the sealing layer 80.

  From the above, the molten metal material moves through the curable resin component and selectively aggregates between the terminals 21 and 41.

  In the manufacturing method of the semiconductor device for forming the connection portion 81 and the sealing layer 80 using the conductive connection sheet 1 as described above, the metal material heated and melted is selectively aggregated between the terminals 21 and 41 for connection. The portion 81 is formed, and the sealing layer 80 composed of the curable resin composition can be formed around the portion 81. As a result, the insulation between the adjacent terminals 21 and 41 can be secured and the occurrence of leakage current can be reliably prevented, so that the connection reliability of the connection via the connection portion 81 between the terminals 21 and 41 is improved. Can do.

  In addition, even in a fine wiring circuit, electrical connection between a large number of terminals 21 and 41 can be performed collectively. Furthermore, in the next step [6], the mechanical strength of the connection portion 81 and the sealing layer 80 can be increased by curing the curable resin composition.

  In this step [5], the semiconductor chip 20 and the interposer 30 may be heated in a pressurized state so that the distance between the opposing terminals 21 and 41 is reduced. For example, the distance between the terminals 21 and 41 facing each other can be increased by heating and pressurizing the semiconductor chip 20 and the interposer 30 in FIG. Since it can be controlled to be constant, it is possible to increase the electrical connection reliability by the connecting portion 81 between the opposing terminals 21 and 41.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

[6] Curing Step Next, in the heating step [5], after forming the connection portion 81 and the sealing layer 80, the sealing layer 80 is fixed by curing the curable resin composition.

  Thereby, both the electrical reliability by the connection part 81 between the terminals 21 and 41 and the mechanical reliability by the sealing layer 80 are fully securable.

  In particular, in this embodiment, since the curable resin composition having a high insulation resistance value at the time of high melt viscosity is used, the insulation of the sealing layer (insulating region) 80 can be more reliably ensured.

  Curing of the curable resin composition can be carried out by heating the curable resin composition. The curing temperature of the curable resin composition can be appropriately set according to the composition of the curable resin composition. Specifically, the temperature is preferably at least 5 ° C. lower than the heating temperature in the heating step [3], and more preferably at least 10 ° C. lower. More specifically, it is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, further preferably 130 ° C. or higher, and most preferably 150 ° C. or higher. Moreover, it is preferable that it is 300 degrees C or less, It is more preferable that it is 260 degrees C or less, It is more preferable that it is 250 degrees C or less, It is most preferable that it is 240 degrees C or less. When the curing temperature is within the above range, the curable resin composition can be sufficiently cured while reliably preventing the conductive connection sheet 1 from being thermally decomposed.

  By the pasting step [1] to the curing step [6] as described above, the semiconductor device manufacturing method of the present invention is configured, and the terminal 21 and the terminal 41 are obtained through these steps [1] to [6]. As a result, the semiconductor device 10 in which the semiconductor chip 20 is mounted on the interposer 30 can be obtained.

[Second production method]
In the second embodiment in which the resin composition layers 11 and 13 included in the conductive connection sheet 1 are made of a thermoplastic resin composition, a terminal 21 of a semiconductor chip (semiconductor element) 20 formed in the semiconductor wafer 100 is provided. A step [1] of attaching the conductive connection sheet 1 to the surface of the substrate, and a piece for obtaining the semiconductor chip 20 to which the conductive connection sheet 1 is attached by cutting the semiconductor wafer 100 into pieces. On the surface on which the terminal 41 of the interposer (opposite electronic component) 30 is provided and the pickup step [3] for picking up the semiconductor chip 20 to which the conductive connection sheet 1 is attached. An arrangement step [4] of arranging the semiconductor element 20 to which the connection sheet 1 is attached so that the conductive connection sheet 1 is interposed therebetween, and a melting point of the metal layer 12 or less. And the heating process [5] which heats the conductive connection sheet 1 at a temperature at which the thermoplastic resin composition constituting the resin composition layers 11 and 13 is softened, and the solidification process [6] which solidifies the thermoplastic resin composition ].

Hereinafter, each process is explained in full detail.
[1] Affixing step First, in the present embodiment in which the resin composition layers 11 and 13 are made of a thermoplastic resin composition, the resin composition layers 11 and 13 are made of a thermosetting resin composition. As in the first manufacturing method, a semiconductor wafer 100 in which a plurality of semiconductor chips 20 are formed is prepared, and the conductive connection sheet 1 is arranged on the surface side of the semiconductor wafer 100 where the terminals 21 are provided.

  At this time, the conductive connection sheet 1 is affixed to the surface of the semiconductor wafer 100 where the terminals 21 are provided so that the defective portion 121 overlaps the positioning mark 455. Thus, by making the defect | deletion part 121 overlap with the positioning mark 455, the positioning of the conductive connection sheet 1 and the semiconductor wafer 100 can be performed with excellent positional accuracy.

[2] Individualization Step Next, in the present embodiment in which the resin composition layers 11 and 13 are made of a thermoplastic resin composition, the resin composition layers 11 and 13 are made of a thermosetting resin composition. In the same manner as in the first manufacturing method, the semiconductor wafer 100 to which the conductive connection sheet 1 is attached is cut into individual pieces by cutting along the dicing line.

  By the pasting step [1] and the singulation step [2] as described above, the semiconductor element manufacturing method of the present invention is configured, and the terminal is obtained through these steps [1] and [2]. A plurality of semiconductor chips 20 each having the conductive connection sheet 1 attached to the surface side on which 21 is provided are collectively formed.

[3] Pickup Step Next, in the present embodiment in which the resin composition layers 11 and 13 are made of a thermoplastic resin composition, the resin composition layers 11 and 13 are made of a thermosetting resin composition. In the same manner as in the first manufacturing method, one of the semiconductor chips 20 to which the plurality of conductive connection sheets 1 are attached is picked up.

  Then, if necessary, the conductive connection sheet 1 is affixed so that the conductive connection sheet 1 of the semiconductor chip 20 to which the conductive connection sheet 1 is affixed and the surface on which the terminal 41 of the interposer 30 is provided. The direction of the attached semiconductor chip 20 is set. That is, the upper and lower surfaces of the semiconductor chip 20 to which the conductive connection sheet 1 is attached are reversed.

[4] Arrangement Step Next, in the present embodiment in which the resin composition layers 11 and 13 are made of a thermoplastic resin composition, the resin composition layers 11 and 13 are made of a thermosetting resin composition. In the same manner as in the first manufacturing method, the semiconductor chip 20 to which the conductive connection sheet 1 is attached is placed on the surface on which the terminals 41 of the interposer 30 are provided so that the conductive connection sheet 1 is interposed therebetween. Placed on.

  At this time, the positioning marks 455 of the semiconductor chip 20 and the positioning marks 456 of the interposer 30 are used to connect the terminals 21 along the direction perpendicular to the surface direction of the semiconductor chip 20 and the interposer 30. The semiconductor chip 20 and the interposer 30 are positioned so that the terminals 41 face each other.

[5] Heating Step Next, as shown in FIG. 4B, the conductive connection sheet 1 disposed between the semiconductor chip 20 and the interposer 30 has a melting point of the metal layer 12 or higher and a resin composition. It heats at the temperature which the thermoplastic resin composition which comprises the physical layers 11 and 13 softens.

  The heating temperature is preferably 5 ° C or higher than the melting point of the metal layer 12, more preferably 10 ° C or higher, more preferably 20 ° C or higher, and more preferably 30 ° C or higher. Is particularly preferred.

  Specifically, the heating temperature is appropriately set depending on the composition of the metal layer 12 and the thermoplastic resin composition to be used, and for example, the same as described in the heating step [5] of the first embodiment described above. Is set in the temperature range.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  At this time, when a compound having a flux function is included in the thermoplastic resin composition, even if an oxide film is formed on the surface of the metal layer 12 due to the flux action of the compound having the flux function, It will be removed by the flux action. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal material is likely to be aggregated between the terminals 21 and 41 arranged opposite to each other.

  Further, even if an oxide film is formed on the surfaces of the terminals 21 and 41, this oxide film is also removed by the flux action of the compound having a flux function, and its wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal material is easily aggregated between the terminals 21 and 41 arranged to face each other.

  In the conductive connection sheet 1, the metal layer 12 has a layer shape, and the conductive connection sheet 1 does not include particles composed of a metal material. Therefore, a plurality of molten metal layers 12 are provided. When the material is divided into two parts and agglomerates on the surfaces of the terminals 21 and 41, it is possible to accurately suppress or prevent a part of them from remaining in the resin composition layers 11 and 13 without aggregating on the terminals 21 and 41. be able to. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the sealing layer 80.

  From the above, the molten metal material moves through the thermoplastic resin component and selectively aggregates between the terminals 21 and 41.

  In the method for forming the connection portion 81 and the sealing layer 80 as described above, the metal material heated and melted is selectively aggregated between the terminals 21 and 41 to form the connection portion 81, and the thermoplastic resin composition is formed around the connection portion 81. The sealing layer 80 comprised by this can be formed. As a result, the insulation between the adjacent terminals 21 and 41 can be secured and the occurrence of leakage current can be reliably prevented, so that the connection reliability of the connection via the connection portion 81 between the terminals 21 and 41 is improved. Can do.

  In addition, even in a fine wiring circuit, electrical connection between a large number of terminals 21 and 41 can be performed collectively. Furthermore, in the next step [6], the mechanical strength of the connection portion 81 and the sealing layer 80 can be increased by solidifying the thermoplastic resin composition.

  In this step [5], the semiconductor chip 20 and the interposer 30 may be heated in a pressurized state so that the distance between the opposing terminals 21 and 41 is reduced. For example, the distance between the terminals 21 and 41 facing each other can be increased by heating and pressurizing the semiconductor chip 20 and the interposer 30 in FIG. Since it can be controlled to be constant, it is possible to increase the electrical connection reliability by the connecting portion 81 between the opposing terminals 21 and 41.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

[6] Solidification Step Next, in the heating step [5], after forming the connection portion 81 and the sealing layer 80, the sealing layer 80 is fixed by solidifying the thermoplastic resin composition.

  Thereby, both the electrical reliability by the connection part 81 between the terminals 21 and 41 and the mechanical reliability by the sealing layer 80 are fully securable.

  Solidification of the thermoplastic resin composition can be carried out by cooling the thermoplastic resin composition heated in the heating step [5].

  Solidification of the thermoplastic resin composition by cooling of the thermoplastic resin composition, that is, fixing of the sealing layer 80 is appropriately selected according to the composition of the thermoplastic resin composition. Specifically, a method by natural cooling may be used, and a method such as blowing cold air is appropriately selected.

  The solidification temperature of the thermoplastic resin composition is not particularly limited, but is preferably lower than the melting point of the metal layer 12. Specifically, the solidification temperature of the thermoplastic resin composition is preferably 10 ° C. or more lower than the melting point of the metal layer 12, more preferably 20 ° C. or more. Moreover, it is preferable that the solidification temperature of a thermoplastic resin composition is 50 degreeC or more, It is more preferable that it is 60 degreeC or more, It is further more preferable that it is 100 degreeC or more. When the solidification temperature of the thermoplastic resin composition is within the above range, the connecting portion 81 can be reliably formed, and the sealing layer 80 can exhibit excellent heat resistance. As a result, insulation between the adjacent terminals 21 and 41 can be ensured accurately, and a short circuit between the adjacent terminals 21 and 41 can be prevented more reliably.

  By the pasting step [1] to the curing step [6] as described above, the semiconductor device manufacturing method of the present invention is configured, and the terminal 21 and the terminal 41 are obtained through these steps [1] to [6]. As a result, the semiconductor device 10 in which the semiconductor chip 20 is mounted on the interposer 30 can be obtained.

  In the first manufacturing method and the second manufacturing method, a semiconductor device is obtained by forming a connection portion 81 between the terminal 21 and the terminal 41 included in the semiconductor chip 20 and the interposer 30 and electrically connecting them. However, the present invention is not limited to such a case, and can be applied to the case where the terminals of the counter electronic component included in the various electronic devices and the terminals of the semiconductor chip 20 are electrically connected. Examples of the counter electronic component include a semiconductor chip, a semiconductor wafer, a rigid substrate, a flexible substrate, and the like.

  Further, the conductive connection sheet 1 of the first embodiment shown in FIG. 2 is attached to the semiconductor wafer 100 in which the plurality of semiconductor chips 20 shown in FIG. 3 are formed, and the conductive connection sheet 1 is attached. The case where the semiconductor device 10 obtained by using the semiconductor wafer 100 is arranged on the interposer and the connection portion 81 and the sealing layer 80 are formed to obtain the semiconductor device 10 has been described. The configuration of the conductive connection sheet Is not limited to such a case, and may be, for example, the conductive connection sheet 1 of the second to fourth embodiments as described below.

<< Second Embodiment >>
FIG. 8 is a schematic diagram showing a second embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention (FIG. 8A is a plan view, FIG. 8B is a partially enlarged plan view, FIG.8 (c) is the BB sectional drawing in FIG.8 (b). In the following description, the front side in FIG. 8 (a) and FIG. 8 (b) and the upper side in FIG. 8 (c) are “up”, and the back side in FIG. 8 (a) and FIG. 8 (b). The lower side in FIG. 8C is referred to as “lower”.

  Hereinafter, the second embodiment of the conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention will be described. However, the difference from the above-described first embodiment of the conductive connection sheet will be mainly described, and similar matters will be described. The description is omitted.

  The conductive connection sheet 1 of the second embodiment has the same configuration as that of the conductive connection sheet 1 of the first embodiment described above except that the configuration of the resin composition layer 13 included therein is different.

  That is, in the conductive connection sheet 1 of the present embodiment, the resin composition layer 13 is similarly deficient at a position corresponding to the deficient portion 121 of the metal layer 12 as shown in FIG. In other words, the conductive connection sheet 1 has a shape in which both the metal layer 12 and the resin composition layer 13 are punched into a circular shape in the defect portion 121.

  Also with the conductive connection sheet 1 having such a configuration, the connection part 81 and the sealing layer 80 are formed between the semiconductor chip 20 and the interposer 30 by applying the semiconductor device manufacturing method (semiconductor element manufacturing method) described above. Thus, the semiconductor device 10 can be manufactured.

  In addition, since not only the metal layer 12 but also the resin composition layer 13 is missing in the defect portion 121, the resin composition layers 11 and 13 are made of, for example, a resin composition having a relatively low translucency. Even so, the positioning mark 455 can be reliably recognized.

  In addition, in the conductive connection sheet 1 having such a configuration, any one of the resin composition layer 11 and the resin composition layer 13 may be missing, and the resin composition layer 13 is missing as shown in FIG. In addition, the resin composition layer 11 may be selectively lost without the resin composition layer 13 being lost.

<< Third Embodiment >>
FIG. 9 is a schematic diagram showing a third embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention (FIG. 9A is a plan view, FIG. 9B is a partially enlarged plan view, FIG.9 (c) is the BB sectional drawing in FIG.9 (b). In the following description, the front side of the paper in FIGS. 9A and 9B and the upper side in FIG. 9C are “up”, and the back side of the paper in FIGS. 9A and 9B. The lower side in FIG. 9C is referred to as “lower”.

  Hereinafter, the third embodiment of the conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention will be described. However, the difference from the above-described first embodiment of the conductive connection sheet will be mainly described, and similar matters will be described. The description is omitted.

  The conductive connection sheet 1 according to the third embodiment has the same configuration as that of the conductive connection sheet 1 according to the first embodiment described above except that the resin composition layer 11 and the resin composition layer 13 included in the conductive connection sheet 1 are different. is there.

  That is, in the conductive connection sheet 1 of the present embodiment, the resin composition layer 11 and the resin composition layer 13 are similarly deficient at positions corresponding to the deficient portions 121 of the metal layer 12 as shown in FIG. doing. In other words, the conductive connection sheet 1 has a shape in which the resin composition layer 11, the metal layer 12, and the resin composition layer 13 are all punched out in the defective portion 121, and the through hole Is formed.

  Also with the conductive connection sheet 1 having such a configuration, the connection part 81 and the sealing layer 80 are formed between the semiconductor chip 20 and the interposer 30 by applying the semiconductor device manufacturing method (semiconductor element manufacturing method) described above. Thus, the semiconductor device 10 can be manufactured.

  In addition, since not only the metal layer 12 but also both the resin composition layers 11 and 13 are deficient in the defect portion 121, the resin composition layers 11 and 13 are made of, for example, a resin composition having low translucency. Even if it is made of a resin composition having no translucency, the positioning mark 455 can be reliably recognized.

<< Fourth Embodiment >>
FIG. 10 is a schematic diagram showing a fourth embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention (FIG. 10A is a plan view, FIG. 10B is a partially enlarged plan view, FIG.10 (c) is the BB sectional drawing in FIG.10 (b). In the following description, the front side of the paper in FIGS. 10A and 10B and the upper side in FIG. 10C are “up”, and the back side of the paper in FIGS. 10A and 10B. The lower side in FIG. 10C is referred to as “lower”.

  Hereinafter, the fourth embodiment of the conductive connection sheet used in the method for manufacturing a semiconductor device according to the present invention will be described. However, the difference from the above-described first embodiment of the conductive connection sheet will be mainly described, and the same matters will be described. The description is omitted.

  The conductive connection sheet 1 of the fourth embodiment has the same configuration as the conductive connection sheet 1 of the first embodiment described above except that the configuration of the metal layer 12 included therein is different.

  That is, in the conductive connection sheet 1 of the present embodiment, as shown in FIG. 10B, the planar view shape of the defect portion 121 included in the metal layer 12 has a cross shape like the positioning mark 455. . That is, the defect portion 121 has substantially the same shape and size as the positioning mark 455.

  Also with the conductive connection sheet 1 having such a configuration, the connection part 81 and the sealing layer 80 are formed between the semiconductor chip 20 and the interposer 30 by applying the semiconductor device manufacturing method (semiconductor element manufacturing method) described above. Thus, the semiconductor device 10 can be manufactured.

  Further, since the shape of the defect portion 121 is substantially the same as the positioning mark 455, the plurality of semiconductor chips 20 are formed on the conductive connection sheet 1 so that the positioning mark 455 and the defect portion 121 overlap. When affixing to the rare semiconductor wafer 100, the positional accuracy of the conductive connection sheet 1 relative to the semiconductor wafer 100 can be further improved.

<< Fifth Embodiment >>
FIG. 11 is a schematic view showing a fifth embodiment of a conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention (FIG. 11A is a plan view, FIG. 11B is a partially enlarged plan view, FIG. 11C is a cross-sectional view taken along line BB in FIG. 11B, and FIG. 12 is an example of a semiconductor wafer applied to a method for manufacturing a semiconductor device using the conductive connection sheet shown in FIG. FIG. 12A is a plan view, FIG. 12B is a partially enlarged plan view, and FIG. 12C is a cross-sectional view taken along the line CC in FIG. 12B. . In the following description, the front side in FIG. 11 (a), (b), FIG. 12 (a), and (b) and the upper side in FIG. 11 (c) and FIG. 11 (a), 11 (b), 12 (a) and 12 (b), and the lower side in FIGS. 11 (c) and 12 (c) are referred to as “lower”.

  Hereinafter, although 5th Embodiment of the conductive connection sheet used for the manufacturing method of the semiconductor device of this invention is described, it demonstrates centering on the difference with 1st Embodiment of the conductive connection sheet mentioned above, About the same matter The description is omitted.

  The conductive connection sheet 1 of the fifth embodiment has the same configuration as that of the conductive connection sheet 1 of the first embodiment described above, except that the configuration of the metal layer 12 included therein is different.

  That is, in the conductive connection sheet 1 of the present embodiment, as shown in FIG. 11A, the metal layer 12 has the defect portion 121 so as to correspond to the position overlapping the positioning mark 455 included in the semiconductor chip 20. In addition, a circular defect portion (first defect portion) 122 is provided at a position different from the position overlapping the semiconductor chip 20.

  The conductive connection sheet 1 having such a configuration is used when the conductive connection sheet 1 is attached to a semiconductor wafer 100 as shown in FIG. This semiconductor wafer 100 has a positioning mark (first positioning mark) 457 at a position different from the position where the semiconductor chip 20 is formed, and the above-described defective portion 122 of the conductive connection sheet 1 is formed. It is provided so as to correspond to a position overlapping with the positioning mark 457.

  Even with the conductive connection sheet 1 and the semiconductor wafer having such a configuration, in the pasting step [1] of the semiconductor device manufacturing method (semiconductor element manufacturing method) described above, a plurality of positioning marks 457 and the defect portions 122 are used. The conductive connection sheet 1 can be aligned with excellent positional accuracy on the side of the semiconductor wafer 100 in which the semiconductor chip 20 is formed, on which the terminals 21 are provided. As a result, the conductive connection sheet 1 is attached to the surface side of the semiconductor wafer 100 where the terminals 21 are provided with excellent positional accuracy.

  In the present embodiment, the defect portion 122 has a circular shape including the positioning mark 457 as in the defect portion 121 in the present embodiment. However, the present invention is not limited to this. It may have a cross shape substantially the same shape as the mark 457 for use.

  In addition, the positioning mark 457 is similar to the positioning marks 455 and 456, but the shape in plan view is a cross shape. However, the positioning mark 457 is not limited to this, and for example, a triangular shape, a quadrangular shape, a pentagonal shape, etc. The shape may be a polygonal shape, a circular shape such as a perfect circle shape or an oval shape, an L shape, or the like.

<< Sixth Embodiment >>
FIG. 13 is a schematic view showing a sixth embodiment of the conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention (FIG. 13A is a plan view, FIG. 13B is a partially enlarged plan view, FIG.13 (c) is the BB sectional drawing in FIG.13 (b). In the following description, the front side in FIG. 13 (a) and FIG. 13 (b) and the upper side in FIG. 13 (c) are “up” and the back side in FIG. 13 (a) and FIG. 13 (b). The lower side in FIG. 13C is referred to as “lower”.

  Hereinafter, the sixth embodiment of the conductive connection sheet used in the method for manufacturing a semiconductor device according to the present invention will be described. However, the difference from the above-described first embodiment of the conductive connection sheet will be mainly described and the same matters will be described. The description is omitted.

  The conductive connection sheet 1 of the sixth embodiment has the same configuration as the conductive connection sheet 1 of the first embodiment described above, except that the configuration of the metal layer 12 included therein is different.

  That is, in the conductive connection sheet 1 of the present embodiment, as shown in FIG. 13A, the metal layer 12 has the defect portion 121 so as to correspond to the position overlapping the positioning mark 455 included in the semiconductor chip 20. In addition, a defect portion (second defect portion) 123 in which a region other than the position overlapping with the semiconductor chip 20 is lost is provided, and the patterning is performed so that the position overlapping with the semiconductor chip 20 remains.

  In the bonding step [1] of the semiconductor device manufacturing method (semiconductor element manufacturing method) described above, the plurality of semiconductor chips 20 are formed using the positioning marks 455 and the defective portions 121 in the conductive connection sheet 1 having such a configuration. When affixed to the side of the semiconductor wafer 100 that has been fabricated, the conductive connection sheet 1 of the present embodiment has a defective portion 123 in a region other than the position overlapping the semiconductor chip 20. Therefore, the dicing lines 110 and 115 included in the semiconductor wafer 100 are positioned so as to overlap with the defect portion 123.

  Therefore, the dicing lines 110 and 115 can be recognized when the semiconductor wafer 100 to which the conductive connection sheet 1 is attached is viewed from the conductive connection sheet 1 side. Therefore, when the semiconductor wafer 100 is placed face up and the cut 118 is made from the conductive connection sheet 1 side in the singulation process [2], the position recognition of the dicing lines 110 and 115 by the dicing apparatus is directly performed. Can be done.

  In this embodiment, since the metal layer 12 has the defect portion 123 and is patterned so that the position overlapping the semiconductor chip 20 remains, the metal layer 12 having such a configuration and the semiconductor chip 20 are combined. By using (overlapping), the semiconductor wafer 100 and the conductive connection sheet 1 can be aligned. That is, the semiconductor wafer 100 and the conductive connection sheet 1 can be aligned using the defect portion 123 without using the defect portion 121.

  In the conductive connection sheet 1 used in the method for manufacturing a semiconductor device of the present invention, the metal layer 12 only needs to have the defect portion 121 used for positioning with the positioning mark 455. For example, the conductive connection sheet 1 of the fourth embodiment or the fifth embodiment is combined with the conductive connection sheet of the second embodiment or the third embodiment. Alternatively, the conductive connection sheet of the sixth embodiment and any one of the conductive connection sheets of the second to fifth embodiments may be combined.

  In each embodiment, as shown in FIGS. 2, 8 to 11, and 13, the metal layer 12 has a resin composition in a region excluding the defect portion 121 (the defect portion 121 and the defect portion 123 in FIG. 13). Although the case where it is formed on the entire surface of the physical layer 11 has been described, the present invention is not limited thereto, and the metal layer 12 is formed on at least a part of the resin composition layer 11 in a region excluding the defect portion 121 in a plan view. The shape is not particularly limited.

  That is, when the metal layer is formed in a part of the resin composition layer 11 in a region excluding the defect portion 121 in a plan view, a certain shape may be repeatedly formed in a pattern shape, May be irregular, and a regular shape and an irregular shape may be mixed.

  Specifically, when the metal layer 12 is formed in a pattern shape in a region excluding the defect portion 121, the shape thereof is, for example, as shown in FIG. Examples include (b), a polka dot pattern (c), a rectangular pattern (d), a checker pattern (e), a frame pattern (f), a lattice pattern (g), or a multiple frame pattern (h). These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  As mentioned above, although the manufacturing method of the semiconductor element of this invention and the manufacturing method of the semiconductor device were demonstrated, this invention is not limited to these.

  For example, the configuration of each part of the conductive connection sheet used in the method for manufacturing a semiconductor device of the present invention can be replaced with any one that can exhibit the same function, or can be added with any configuration. You can also.

  In the embodiment, the conductive connection sheet has a three-layer structure in which the first resin composition layer, the metal layer, and the second resin composition layer are laminated in this order. However, the present invention is not limited to this case, and it is sufficient that one resin composition layer and one metal layer exist, for example, the first resin composition layer and the second resin. You may be comprised with the laminated body which makes the two-layer structure from which any one was abbreviate | omitted among the composition layers.

  In the above-described embodiment, the case where the semiconductor wafer and the conductive connection sheet are aligned by overlapping the defect portion of the conductive connection sheet and the positioning mark of the semiconductor wafer 100 has been described. Any method may be used as long as the alignment method uses at least two missing portions and at least two positioning marks as coordinates.

DESCRIPTION OF SYMBOLS 1 Conductive connection sheet 10 Semiconductor device 100 Semiconductor wafer 11 1st resin composition layer 110,115 Dicing line 118 Cutting 12 Metal layer 121,122,123 Defect part 13 2nd resin composition layer 20 Semiconductor chip 21 Terminal 30 Inter Poser 41 Terminal 411 Terminal area 412 Non-terminal area 351, 451 First side 352, 452 Second side 353, 453 Third side 354, 454 Fourth side 455, 456, 457 Positioning mark 70 Bump (terminal )
80 Sealing layer 81 Connection part

Claims (17)

A conductive connection sheet composed of a laminate including a first resin composition layer containing a resin component and a metal layer composed of a low-melting-point metal material has the first terminal of the semiconductor element having the first terminal. A method for manufacturing a semiconductor element, which manufactures a semiconductor element attached to a surface provided with one terminal,
A first positioning mark formed on the semiconductor wafer and a part of the metal layer are partially missing on a surface side of the semiconductor wafer on which the plurality of semiconductor elements are formed, on which the first terminal is provided. A pasting step of pasting the conductive connection sheet using the first defect portion to be;
A method of manufacturing a semiconductor element, comprising: a step of dividing the semiconductor wafer along a dicing line into pieces to obtain the semiconductor element to which the conductive connection sheet is attached. .   2. The method of manufacturing a semiconductor element according to claim 1, wherein in the attaching step, the conductive connection sheet is attached to the semiconductor wafer such that the first defect portion overlaps the first positioning mark.   The method of manufacturing a semiconductor element according to claim 2, wherein the first defect portion is set to a size that includes the first positioning mark.   The method of manufacturing a semiconductor element according to claim 3, wherein the first defect portion has substantially the same shape as the first positioning mark.   The method for manufacturing a semiconductor element according to claim 1, wherein the first resin composition layer is deficient at a position corresponding to the first deficient portion.   6. The laminate according to claim 1, further comprising a second resin composition layer provided on the surface of the metal layer opposite to the first resin composition layer and containing a resin component. The manufacturing method of the semiconductor element in any one.   The method for manufacturing a semiconductor element according to claim 6, wherein the second resin composition layer is deficient at a position corresponding to the first deficient portion.   The method for manufacturing a semiconductor element according to claim 6, wherein the second resin composition layer includes a compound having a flux function.   The method for manufacturing a semiconductor element according to claim 1, wherein the first resin composition layer includes a compound having a flux function.   The method for producing a semiconductor element according to claim 8 or 9, wherein the compound having a flux function contains a compound having at least one of a phenolic hydroxyl group and a carboxyl group.   The metal layer includes tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), 11. The alloy of at least two or more metals selected from the group consisting of aluminum (Al), gold (Au), germanium (Ge), and copper (Cu), or a simple substance of tin. A method for manufacturing a semiconductor device.   2. The semiconductor element has a first terminal region in which the first terminal is disposed, and the first positioning mark is disposed outside the first terminal region. The manufacturing method of the semiconductor element in any one of thru | or 11.   12. The method of manufacturing a semiconductor device according to claim 1, wherein, in the singulation step, the first positioning mark also serves as a position recognition mark for recognizing a position of the dicing line.   14. The metal layer according to claim 1, wherein the metal layer has a second defect portion that is missing at a position overlapping with the dicing line when the conductive connection sheet is attached to the semiconductor wafer in the attaching step. The manufacturing method of the semiconductor element of description.   The method of manufacturing a semiconductor element according to claim 1, wherein the first positioning mark is formed corresponding to each of the semiconductor elements built in the semiconductor wafer. The semiconductor element manufacturing method according to claim 15, wherein after preparing the semiconductor element to which the conductive connection sheet is attached, the first terminal included in the semiconductor element and the counter electronic component includes A method of manufacturing a semiconductor device, wherein a connection portion that electrically connects two terminals is formed to obtain a semiconductor device in which the semiconductor element is mounted on the counter electronic component,
A pickup step of picking up the semiconductor element to which the conductive connection sheet is attached;
Using the first positioning mark and the second positioning mark formed on the counter electronic component, the semiconductor element and the counter electronic component are positioned, and the second of the counter electronic component is positioned. An arrangement step of arranging the semiconductor element so that the conductive connection sheet is interposed on a surface provided with terminals;
A heating step of forming the connection portion by heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and the first resin composition layer is deformable;
A method for manufacturing a semiconductor device, comprising: a curing / solidifying step for curing or solidifying the first resin composition layer.   The counter electronic component has a second terminal region in which the second terminal is disposed, and the second positioning mark is disposed outside the second terminal region. 16. A method for manufacturing a semiconductor device according to 16.

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