JP2014110298A - Method of manufacturing pressure-welded semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a pressure-welded semiconductor device capable of manufacturing a pressure-welded semiconductor device by assembling undistorted components.SOLUTION: There is provided a method of manufacturing a pressure-welded semiconductor device comprising: a component arranging step of arranging components of a pressure-welded semiconductor device including a semiconductor chip inside a housing; a pressing structural member mounting step of mounting a pressing structural member contacting the semiconductor chip on the semiconductor chip; a lid attaching step of covering the housing with a lid over the pressing structural member; a pressing step of applying a predetermined pressure to between the lid and the housing; and a joining step of joining the lid and the housing after the pressing in the pressing step.

Description

  Embodiments described herein relate generally to a method for manufacturing a pressure contact type semiconductor device having a semiconductor chip therein.

  2. Description of the Related Art In recent years, a voltage-driven semiconductor switching element represented by an insulated gate bipolar transistor (IGBT), which has high switching speed and high power and high breakdown voltage, has been used.

  A voltage-driven semiconductor switching element has a small capacity per semiconductor chip from the viewpoint of manufacturing, and is often a pressure-contact type semiconductor device in which a large number of semiconductor chips are connected to increase the capacity.

  In a pressure-contact type semiconductor device that uses a pressure-contact method as a method for electrically connecting semiconductor chips, it is important to press-contact all the semiconductor chips evenly. In order to press the semiconductor chips evenly, for example, it is important to form the same thickness width of the semiconductor chips and to make the processing accuracy of the flat surface of the metal member to be pressed uniform.

Japanese Patent Laid-Open No. 10-150061 JP 2000-91362 A JP 2002-270246 A Japanese Patent Laid-Open No. 2004-23083

  However, the components constituting the conventional pressure contact type semiconductor device include components formed by bonding ceramic and a conductive material made of, for example, copper. Ceramic and copper have different coefficients of thermal expansion, and it is considered that distortion and distortion have occurred in such components due to heat treatment performed in the process of joining these members having different coefficients of thermal expansion. When a pressure-contact type semiconductor device is manufactured using such a component in which distortion or the like occurs, there is a risk that the bonding force to the semiconductor chip becomes uneven or internal stress is generated.

  The problem to be solved by the present invention is to provide a manufacturing method of a press contact type semiconductor device capable of manufacturing a press contact type semiconductor device with a component which is not distorted.

  The manufacturing method of the pressure contact type semiconductor device of one embodiment is configured as follows. A component placement step for placing the components of the pressure contact type semiconductor device including the semiconductor chip inside the housing; and a pressing structure member placement step for placing a pressure structure member in contact with the semiconductor chip on the top of the semiconductor chip; A lid mounting step of covering the casing with the lid over the pressing structure member, a pressing step of applying a predetermined pressure between the lid and the casing, and pressing after the pressing step, and then the lid and the casing The manufacturing method of the pressure contact type semiconductor device is configured from a bonding step of bonding between the two.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front sectional view showing a pressure contact type semiconductor device according to a first embodiment of a manufacturing method for manufacturing a pressure contact type semiconductor device. The flowchart showing 1st Embodiment of the manufacturing method. Front sectional drawing which shows the press-contact type semiconductor device concerning 2nd Embodiment of the manufacturing method of a press-contact type semiconductor device. The flowchart showing 2nd Embodiment of the manufacturing method.

<First Embodiment>
Hereinafter, a first embodiment of a method for manufacturing a pressure-contact type semiconductor device will be described with reference to the drawings, taking an example of manufacturing a pressure-contact type semiconductor device 10. FIG. 1 is a front sectional view showing a pressure-contact type semiconductor device 10 manufactured by the manufacturing method of the pressure-contact type semiconductor device according to the first embodiment, and FIG. 2 is a flowchart (flow chart) showing the first embodiment of the manufacturing method. is there.

  First, the press contact type semiconductor device 10 will be described. As shown in FIG. 1, the press-contact type semiconductor device 10 includes a semiconductor chip 12, a housing 14, a pressing structure member 16, and a lid 18.

  The semiconductor chip 12 is a voltage-driven semiconductor typified by an insulated gate bipolar transistor (IGBT). A plurality of semiconductor chips 12 are provided on a lower pressing structure member 22 to be described later.

  The housing 14 has an annular insulating member 20 and a lower pressing structure member 22. The annular insulating member 20 is made of an insulating material such as ceramic and is formed in an annular shape. A lower pressing structure member 22 is provided inside the annular insulating member 20. The annular insulating member 20 is provided with a metal piece for brazing.

  The lower pressing structure member 22 is made of a conductive material such as copper and has a shape along the inner periphery of the annular insulating member 20. A plurality of pressure contact members 28 are provided on the lower pressing structure member 22. The pressure contact member 28 is formed so that the upper surface is flat and the upper surface of each pressure contact member 28 is located on the same plane. The lower pressing structure member 22 is fixed to the annular insulating member 20 by brazing. The semiconductor chip 12 is disposed on the upper surface of the pressure contact member 28 of the lower pressing structure member 22.

  The pressing structure member 16 is made of a conductive material such as copper, and is formed so as to be housed inside the annular insulating member 20. A pressing member 26 is provided below the pressing structure member 16. The pressure contact member 26 is formed so as to correspond to the pressure contact member 28, and is formed such that the lower surface is flat and the lower surfaces of the pressure contact members 26 are located on the same plane. The semiconductor chip 12 is sandwiched between the pressing member 28 of the lower pressing structure member 22 and the pressing member 26 of the pressing structure member 16. Further, between the pressing structure member 16 and the lower pressing structure member 22, internal components of the press contact type semiconductor device 10 other than the semiconductor chip 12, for example, a resistance piece or a conductive piece for connection are also assembled.

  The lid 18 is made of a conductive material and is formed corresponding to the shape of the upper portion of the housing 14. When the lid 18 is placed on the upper portion of the housing 14, the lower surface is in contact with the upper surface of the pressing structure member 16, and the peripheral edge is in close contact with the upper surface of the housing 14 by pressing with a predetermined pressure. Is formed so that it can be sealed. That is, as shown in FIG. 1, the height width of the pressing structure member 16 is a, and the thickness width of the semiconductor chip 12 is b. The total value of these thickness widths is a value at which a predetermined pushing allowance is generated between the casing 14 and the lid 18 when the lid 18 is put on the casing 14.

  In FIG. 1, the lower mold 34 of the mold clamping device 30 is at the lower part of the housing 14, and the upper mold 32 of the mold clamping apparatus 30 is at the upper part of the lid 18. The mold clamping device 30 includes an upper mold 32, a lower mold 34, and a pressing mechanism that presses between the upper mold 32 and the lower mold 34. The upper mold 32 is formed with an inner surface shape adapted to the outer shape of the lid 18, and the lower mold 34 is formed with an inner surface shape adapted to the outer shape of the housing 14. In addition, you may provide in the metal mold | die comprised from the upper metal mold | die 32 and the lower metal mold | die 34 as needed, and the relief | combination for respond | corresponding to the plastic deformation of the material by press.

  Next, a manufacturing method for manufacturing the pressure contact type semiconductor device 10 will be described with reference to a flowchart shown in FIG.

  The casing 14 is formed by joining the annular insulating member 20 and the lower pressing structure member 22 through heat treatment (S1). When the housing 14 is formed, the semiconductor chip 12 is placed on the pressure contact member 28 of the lower pressing structure member 22 of the housing 14, and further, internal components other than the semiconductor chip 12 are disposed (component component arranging step) (S 2). ). When all of these internal components are stored in the housing 14, the pressing structure member 16 is placed on the semiconductor chip 12 (pressing structure member mounting step) (S3). Further, the lid 18 is placed on the pressing structure member 16 (lid attachment step) (S4).

  In this manner, the internal components of the press contact type semiconductor device 10 are assembled between the casing 14 and the lid body 18 and the lid body 18 and the casing 14 are not joined. It is also called a set of components. If a set of components of the press contact type semiconductor device is formed, the set of components of the press contact type semiconductor device is set in the mold clamping device 30 (S5).

  When a set of components of the press contact type semiconductor device is assembled between the upper mold 32 and the lower mold 34, the mold clamping device 30 is operated. The upper mold 32 is pushed down by the pressing mechanism, and the space between the lid 18 and the housing 14 is pressed from above and below (pressing step) (S6). As a result, the set of components of the pressure contact type semiconductor device is pressed.

  The mold clamping device 30 is pressed so that a pressing force equivalent to the pressure contact force applied to the semiconductor chip 12 is generated in the semiconductor chip 12 of the component parts of the pressure contact type semiconductor device in a state where the pressure contact type semiconductor device 10 is commercialized. Press with the mechanism. The step of performing the pressing operation is a pressing step in the claims.

  When the pressing process in the mold clamping device 30 is completed, a set of components of the pressure-contact type semiconductor device is taken out from the mold clamping device 30 and the lid 18 and the housing 14 are joined under a predetermined condition (joining process) (S7). ). The casing 14 is provided with a metal piece for joining the lid 18 and the casing 14 in advance.

  According to the method for manufacturing a pressure-contact type semiconductor device, even if the housing 14 and the like are distorted by the heat treatment performed when forming the housing 14, the strain is pressed by the mold clamping device 30. It is corrected by. Therefore, the press contact type semiconductor device 10 is assembled with components without distortion, and in this state, the lid 18 and the housing 14 are joined.

  Therefore, no internal stress or the like remains in the press-contact type semiconductor device 10 that has been commercialized, and the semiconductor chip 12 has a desired pressing force by the pressing structure member 16 and the lower pressing structure member 22, and each semiconductor chip. 12 will be press-contacted by equal pressure.

Second Embodiment
Next, a second embodiment of the manufacturing method of the pressure contact type semiconductor device will be described with reference to the cross-sectional view of FIG. 3 and the flowchart of FIG. 3 has the same configuration as the press-contact type semiconductor device 10 of FIG. 1 except that a clamping member 40 is disposed instead of the semiconductor chip 12. The members having the same configuration are denoted by the same reference numerals and description thereof is omitted.

  First, the housing 14 is formed in the same manner as in the first embodiment of the manufacturing method (Sa1). If the housing | casing 14 is formed, the clamping member 40 will be mounted on the lower press structure member 22 in the housing | casing 14 (clamping member arrangement | positioning process) (Sa2). The clamping member 40 has a thickness width C equal to the thickness width of the semiconductor chip 12 in the first embodiment. The clamping member 40 is made of, for example, a cemented carbide or a ceramic material, and has a hardness and strength that do not easily cause compression deformation or breakage.

  The pressing structure member 16 is placed on the clamping member 40 (pressing structure member mounting step) (Sa3), and the casing 14 is covered with the lid body 18 (lid body mounting step) (Sa4). With the clamping member 40 sandwiched between the lower pressing structure member 22 and the pressing structure member 16, the casing 14 covered with the lid 18 is attached to the mold clamping device 30 (Sa5). The mold clamping device 30 presses the casing 14 covered with the lid 18 from above and below (pressing step) (Sa6).

  The mold clamping device 30 presses the casing 14 covered with the lid 18 so that a pressing force equivalent to the pressing force applied to the semiconductor chip 12 of the press-contact type semiconductor device 10 as a product is applied to the clamping member 40. Such a process is a pressing process in the scope of claims.

  After performing the pressing step, the casing 14 covered with the lid 18 is removed from the mold clamping device 30 (Sa7). Further, the lid 18 is removed from the housing 14 (Sa8), and the holding member 40 is taken out from the inside of the housing 14 (a holding member removing step) (Sa9). If the clamping member 40 is taken out from the housing | casing 14, while mounting the semiconductor chip 12 on the press-contacting member 28, all other internal components are integrated in the housing | casing 14 (component component arrangement | positioning process) (Sa10).

  After the internal components are incorporated in the casing 14, the pressing structure member 16 is placed (pressing structure member placement) (Sa11), and the casing 14 is covered with the lid body 18 (lid body attaching step) (Sa12). Then, the lid 18 and the casing 14 are joined by brazing (joining step) (Sa13).

  According to the second embodiment of the method of manufacturing a press-contact type semiconductor device, the pressing member 40 is pressed between the lower pressing structure member 22 and the pressing structure member 16, so that the lower pressing structure member 22 and the pressing structure member are pressed. 16 can be pressed evenly, and the distortion occurring in these can be effectively corrected.

  Since the pinching member 40 has high hardness and is not easily deformed, the interval between the pressing structure member 16 and the lower pressing structure member 22 can be accurately set. Since the semiconductor chip 12 as a product is not pressed in the pressing process, the semiconductor chip 12 is not affected by the pressing. The clamping member 40 can be repeatedly used for manufacturing the pressure-contact type semiconductor device 10, and the manufacturing cost of the pressure-contact type semiconductor device 10 can be reduced.

<Third Embodiment>
A third embodiment of the manufacturing method of the pressure contact type semiconductor device will be described. In the manufacturing method of the third embodiment, the clamping member 41 used in the manufacturing method of the third embodiment is the thickness width of the clamping member 40 in the manufacturing method of the second embodiment, that is, the standard thickness width of the semiconductor chip 12 (standard The manufacturing method is the same as the manufacturing method of the second embodiment except that the thickness is smaller than that of the second embodiment.

  The standard thickness width of the semiconductor chip 12 is a desired thickness of the semiconductor chip 12 sandwiched between the pressing structure member 16 and the lower pressing structure member 22 when the lid 18 and the casing 14 are joined under a predetermined condition. It is the thickness width in which the bonding force is generated.

  Furthermore, the standard thickness width of the semiconductor chip 12 has an allowable value in both the direction in which the thickness width increases and the direction in which the thickness width decreases. If the allowable value of the thickness width of the semiconductor chip 12 is within the allowable range, the bonding force between the pressing structure member 16 and the semiconductor chip 12 is within the allowable range. The allowable value may include not only errors in manufacturing the semiconductor chip 12 but also errors in components that press the semiconductor chip 12.

  The thickness width of the clamping member 41 is equal to the minimum thickness width allowed in the direction in which the thickness width decreases from the standard thickness width of the semiconductor chip 12.

  In the third embodiment of the manufacturing method of the press contact type semiconductor device, the clamping member 30 is used to clamp the casing 14 covered with the lid 18 with the clamping member 41 sandwiched between the lower pressing structure member 22 and the pressing structure member 16. Press. The pressing by the mold clamping device 30 is performed so as to be the minimum pressing force within the allowable range of the pressing force applied to the semiconductor chip 12 of the press contact type semiconductor device 10 as a product. According to this manufacturing method, the distance between the pressing structure member 16 and the lower pressing structure member 22 is formed to be equal to the allowable minimum thickness width of the semiconductor chip 12. The clamping member 41 is taken out of the casing 14 formed in this way, and a set of internal components of the pressure contact type semiconductor device is incorporated into the casing 18 and the casing 14 in the same manner as in the second embodiment of the manufacturing method. Join.

  In the press contact type semiconductor device manufactured by the third embodiment of the manufacturing method, the distance between the pressing structure member 16 and the lower pressing structure member 22 is formed to be equal to the minimum thickness width allowed for the semiconductor chip 12. Therefore, even if the semiconductor chip 12 assembled in the housing 14 includes a semiconductor chip 12 having the minimum thickness width within the allowable range, the minimum thickness width within the allowable range is included. The semiconductor chip 12 is also pressed by the pressing structure member 16 and the lower pressing structure member 22 with a bonding force within an allowable range.

  Therefore, according to the manufacturing method of the third embodiment, by using the holding member 41, the distance between the pressing structure member 16 and the lower pressing structure member 22 corresponds to the semiconductor chip 12 having the smallest thickness width within the allowable range. Thus, each semiconductor chip 12 can be reliably pressed with a predetermined bonding force.

  Also, during the pressing process, the housing 14 and the lid 18 in a state in which the set of components of the pressure contact type semiconductor device or the clamping member 40 is sandwiched are heated to a temperature suitable for correcting the distortion of the components. You may heat with an apparatus. Then, the metal member of the component part is softened by the temperature rise, and the distortion is efficiently corrected.

  Further, in this case, the pressing step may be continued until the temperature of the component part decreases to room temperature. As a result, the distortion of the component can be corrected more reliably.

  As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  For example, in the manufacturing method of the first embodiment, not all of the internal components are assembled to the housing 14 and the pressing process is performed, but in the pressing process, only the components that receive the pressing action are assembled and the pressing process is performed. Good. In this case, after the pressing step is completed, components that are not subjected to the pressing action are incorporated into the casing 14, and the lid 18 and the casing 14 are joined.

  DESCRIPTION OF SYMBOLS 10 ... Pressure-contact type semiconductor device, 12 ... Semiconductor chip, 14 ... Housing | casing, 16 ... Pressing structural member, 18 ... Lid body, 20 ... Annular insulating member, 22 ... Lower pressing structural member, 26, 28 ... Pressing member, 30 ... Clamping device, 32 ... upper mold, 34 ... lower mold, 40, 41 ... clamping member.

Claims (6)

In a method of manufacturing a pressure-contact type semiconductor device in which a semiconductor chip is housed inside a housing and the semiconductor chip is pressed between the housing and the lid that covers the housing,
A component placement step of placing a component of the pressure contact type semiconductor device including the semiconductor chip inside the housing; and
A pressing structure member placing step of placing a pressing structure member in contact with the semiconductor chip on top of the semiconductor chip placed in the housing in the component placement step;
A lid mounting step of covering the casing with the lid over the pressing structure member placed in the pressing structure member placing step;
A pressing step of applying a predetermined pressure between the lid and the casing that are covered in the lid mounting step;
After pressing in the pressing step, a bonding step for bonding between the lid and the housing;
A method of manufacturing a press-contact type semiconductor device comprising: In a method of manufacturing a pressure-contact type semiconductor device in which a semiconductor chip is housed inside a housing and the semiconductor chip is pressed between the housing and the lid that covers the housing,
A sandwiching member arranging step of placing a sandwiching member having a thickness width equivalent to the semiconductor chip inside the housing; and
A pressing structure member mounting step of mounting a pressing structure member mounted on the upper portion of the semiconductor chip on the upper portion of the clamping member disposed in the housing in the clamping member arrangement step;
A lid mounting step of covering the casing with the lid over the pressing structure member placed in the pressing structure member placing step;
A pressing step of pressing between the lid and the casing covered in the lid mounting step with a predetermined pressure;
A clamping member removing step of opening the lid and removing the clamping member from the housing;
A component placement step of placing the components of the press contact type semiconductor device including the semiconductor chip inside the housing from which the clamping member has been removed in the clamping member removal step;
A pressing structure member placing step of placing a pressing structure member in contact with the semiconductor chip on top of the semiconductor chip placed in the housing in the component placement step;
A lid mounting step of covering the casing with the lid over the pressing structure member placed in the pressing structure member placing step;
A joining step for joining the lid and the housing;
A method of manufacturing a press-contact type semiconductor device comprising:   The clamping member is formed to be thinner than the standard thickness width of the semiconductor chip by an error of a maximum thickness width allowed in the thickness direction of the semiconductor chip with respect to the standard thickness width of the semiconductor chip. A method for manufacturing a press-contact type semiconductor device according to claim 2.   4. The method of manufacturing a press-contact type semiconductor device according to claim 2, wherein the clamping member is formed of any one of ceramic, cemented carbide, and a press mold material.   5. The method of manufacturing a press-contact type semiconductor device according to claim 1, wherein the component part is heated in the pressing step.   6. The method of manufacturing a press-contact type semiconductor device according to claim 5, wherein after the component is heated, the pressing step is continuously performed until the temperature of the component decreases to a predetermined temperature.

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