JP2014107397A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits the occurrence of warpage when a thermosetting resin sheet is thermally cured after a plurality of semiconductor chips are buried in the thermosetting resin sheet.SOLUTION: The semiconductor device manufacturing method comprises: a process A of preparing a first laminate with semiconductor chips in which a plurality of semiconductor chips are arranged on a first laminate in which an adhesive layer is provided on a base; a process B of obtaining a second laminate by arranging a thermosetting resin sheet on a surface of the first laminate with the semiconductor chips on the side where the plurality of semiconductor chips rise; a process C of burying a plurality of semiconductor chips in a thermosetting resin sheet by facing two second laminates and applying pressure to the two second laminates to obtain two third laminates each including the base, the adhesive layer and the thermosetting resin sheet in which semiconductor chips are buried; and a process D of thermally curing the thermosetting resin sheets after the process C in a state where surfaces of the thermosetting resin sheets of two third laminates are opposed to each other.

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  In recent years, the miniaturization of semiconductor devices and the miniaturization of wiring have been steadily progressing, and more I / Os in a narrow semiconductor chip region (a region that overlaps with a semiconductor chip when the semiconductor chip is seen through in plan view). Pads and vias must be provided, and at the same time the pin density is increasing. Further, in the BGA (Ball Grid Array) package, a large number of terminals are formed in the semiconductor chip region, and the region for forming other elements is limited. Therefore, the semiconductor chip region is formed on the semiconductor package substrate. The method of pulling out the wiring from the terminal to the outside of is taken.

  Under these circumstances, if individual measures were taken to reduce the size of semiconductor devices and the miniaturization of wiring, production efficiency decreased due to the expansion of production lines and the complexity of production procedures, resulting in a demand for lower costs. You will not be able to respond.

  On the other hand, in order to reduce the cost of manufacturing a semiconductor package, a method of forming a package by arranging a plurality of singulated chips on a support and collectively sealing with a resin has been proposed. For example, in Patent Document 1, a plurality of chips separated on a heat-sensitive adhesive formed on a support are arranged, and a plastic common carrier is formed so as to cover the chips and the heat-sensitive adhesive. A method of peeling the common carrier in which the chip is embedded by heating and the heat-sensitive adhesive is used.

US Pat. No. 7,202,107

  However, the semiconductor device manufacturing method disclosed in Patent Document 1 does not describe thermal curing of a plastic common carrier. Moreover, even if it is thermally cured, there is a problem that the common carrier is warped as a whole because shrinkage occurs when the common carrier is thermally cured.

  Therefore, an object of the present invention is to provide a semiconductor device capable of suppressing the occurrence of warping when the thermosetting resin sheet is thermoset after embedding a plurality of semiconductor chips in the thermosetting resin sheet. It is to provide a manufacturing method.

  The inventors of the present application have found that the above-mentioned problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the present invention is a method of manufacturing a semiconductor device,
A method for manufacturing a semiconductor device, comprising:
Preparing a first laminated body with a semiconductor chip in which a plurality of semiconductor chips are arranged on a first laminated body provided with an adhesive layer on a pedestal; and
A step B of obtaining a second laminated body by disposing a thermosetting resin sheet on the surface of the first laminated body with a semiconductor chip prepared in the step A on the side where the plurality of semiconductor chips are exposed;
By applying pressure with the thermosetting resin sheet surfaces of the two second laminates facing each other through an intermediate film, the plurality of semiconductor chips are embedded in the thermosetting resin sheet and bonded to the base. Step C for obtaining two third laminated bodies each having an agent layer and a thermosetting resin sheet embedded with a semiconductor chip;
After the step C, the thermosetting resin sheet of the third laminated body is left in a state where the thermosetting resin sheet surfaces of the two third laminated bodies are opposed to each other through the intermediate film. Thermosetting step D;
After the step D, a step E of peeling the intermediate film from the third laminate,
After the step E, a step F of peeling the first laminate from the thermosetting resin sheet;
After the step F, the method includes a step G of forming a wiring on the thermosetting resin sheet.

According to the semiconductor device manufacturing method of the present invention, first, a first stacked body with a semiconductor chip in which a plurality of semiconductor chips are arranged on a first stacked body having an adhesive layer provided on a pedestal is prepared. (Process A). Next, a thermosetting resin sheet is disposed on the surface of the first laminated body with semiconductor chips prepared in the step A on the side where the plurality of semiconductor chips are exposed to obtain a second laminated body ( Step B). Next, the thermosetting resin sheet surfaces of the two second laminates are opposed to each other via an intermediate film, and pressure is applied (pressed), whereby the plurality of semiconductor chips are bonded to the thermosetting resin. Two third laminated bodies having a thermosetting resin sheet embedded in a sheet, a base, an adhesive layer, and a semiconductor chip are obtained (step C). After the step C, the thermosetting resin sheet of the third laminated body is left in a state where the thermosetting resin sheet surfaces of the two third laminated bodies are opposed to each other through the intermediate film. Heat cure (step D). Therefore, while the thermosetting resin sheet of the third laminate is thermoset, the thermosetting resin sheet is thermoset while being sandwiched between two pedestals. As a result, warpage of the thermosetting resin sheet during thermosetting can be suppressed. Moreover, since two 3rd laminated bodies can be obtained by one press (process C) and thermosetting (process D), it is excellent in productivity.
After the step D, the intermediate film is peeled from the third laminate (step E). After the step E, the first laminate is peeled from the thermosetting resin sheet (step F). After the step F, wiring is formed on the thermosetting resin sheet (step G). As a result, a semiconductor device in which the wiring is drawn outside the chip can be obtained.

  The said structure WHEREIN: The peeling strength of the said intermediate | middle film after the said process D and the said thermosetting resin sheet (the said thermosetting resin sheet after thermosetting) is the conditions whose peeling angle is 180 degrees and peeling speed is 300 m / min. It is preferable that it is 1000 mN / cm or less. When the peel strength is 1000 mN / cm or less, the intermediate film can be suitably peeled from the thermosetting resin sheet without roughening the surface of the thermosetting resin sheet.

  The said structure WHEREIN: It is preferable that the surface roughness Ra of the said intermediate | middle film is 50 nm-100 micrometers. When the surface roughness Ra of the intermediate film is 50 nm to 100 μm, the intermediate film can be more preferably peeled from the thermosetting resin sheet.

  The said structure WHEREIN: It is preferable that the surface of the said intermediate | middle film is mold-release-processed. If the surface of the intermediate film is subjected to a release treatment, the intermediate film can be more preferably peeled from the thermosetting resin sheet.

  The said structure WHEREIN: It is preferable that the said intermediate | middle film is comprised from the peelable film provided in both surfaces of the support plate and the said support plate. When the intermediate film is composed of a support plate and a peelable film provided on both surfaces of the support plate, the support plate which is not easily deformed ensures the flatness of the surface of the thermosetting resin sheet and is peeled off. The peelability from the thermosetting resin sheet can be ensured by the adhesive film.

  The said structure WHEREIN: It is preferable that the glass transition temperature before the thermosetting of the said thermosetting resin sheet is 50 degreeC or more. When the glass transition temperature before thermosetting of the thermosetting resin sheet is 50 ° C. or more, the heat resistance is excellent.

  The said structure WHEREIN: It is preferable that the said thermosetting resin sheet has the tensile storage elastic modulus in 25 degreeC after thermosetting in the range of 0.1 Gpa-30 Gpa. When the tensile storage elastic modulus at 25 ° C. after thermosetting of the thermosetting resin sheet is 0.1 Gpa or more, it has a certain degree of strength and is easy to maintain the shape. If there is, it is excellent in that stress can be relaxed.

  In the configuration, in the third laminated body obtained in the step C, the heat from the upper surface (the surface opposite to the adhesive layer) of the semiconductor chip embedded in the thermosetting resin sheet. It is preferable that the distance to the surface on the intermediate film side of the curable resin sheet is in the range of 20 μm to 300 μm. When the distance is in the range of 20 μm to 300 μm, it is excellent in that the exposure of the semiconductor chip can be prevented and the warp of the thermosetting resin sheet and the stress applied to the thermosetting resin sheet can be reduced.

  The said structure WHEREIN: The conditions at the time of the pressurization in the said process C are the range of the temperature of 70 to 130 degreeC, the pressure of 0.2 Mpa to 5 Mpa, and the degree of vacuum of 0.1 to 20 torr, 100 of the said thermosetting resin sheet. It is preferable that the viscosity at 10 ° C. is in the range of 10 to 5000 Pa · s (Pascal second). The conditions at the time of pressurization in Step C are a temperature of 70 ° C. to 130 ° C., a pressure of 0.2 Mpa to 5 Mpa, and a vacuum degree of 0.1 to 20 torr, and the thermosetting resin sheet has a viscosity at 100 ° C. A semiconductor chip can be suitably embedded in a thermosetting resin sheet as it is in the range of 10 to 5000 Pa · s.

  ADVANTAGE OF THE INVENTION According to this invention, when the said thermosetting resin sheet is thermosetted after embedding a some semiconductor chip in a thermosetting resin sheet, it can suppress that a curvature generate | occur | produces.

It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on other embodiment.

  Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings.

A manufacturing method of a semiconductor device according to the present embodiment is a manufacturing method of a semiconductor device,
Step A for preparing a first laminated body with a semiconductor chip in which a plurality of semiconductor chips are arranged on a first laminated body having an adhesive layer provided on a pedestal (Step for preparing a first laminated body with a semiconductor chip) When,
Step B (first step) of obtaining a second laminated body by disposing a thermosetting resin sheet on the surface of the first laminated body with semiconductor chips prepared in step A on the side where the plurality of semiconductor chips are exposed. Step of obtaining a laminate of 2),
By applying pressure with the thermosetting resin sheet surfaces of the two second laminates facing each other through an intermediate film, the plurality of semiconductor chips are embedded in the thermosetting resin sheet and bonded to the base. Step C (step of obtaining two third laminates) that obtains two third laminates having an agent layer and a thermosetting resin sheet embedded with a semiconductor chip;
After the step C, the thermosetting resin sheet of the third laminated body is left in a state where the thermosetting resin sheet surfaces of the two third laminated bodies are opposed to each other through the intermediate film. Thermosetting step D (step of thermosetting the thermosetting resin sheet);
After the step D, a step E (step of peeling the intermediate film) of peeling the intermediate film from the third laminate,
After the step E, a step F (step of peeling the first laminate) of peeling off the first laminate from the thermosetting resin sheet;
After the step F, the method includes at least a step G (step of forming a wiring) for forming a wiring on the thermosetting resin sheet.

[Step of preparing first laminated body with semiconductor chip]
1 to 7 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to an embodiment of the present invention. First, in the step of preparing the first laminated body with semiconductor chips (step A), as shown in FIG. 1, a plurality of semiconductor chips are formed on the first laminated body 20 in which the adhesive layer 24 is provided on the pedestal 22. A first stacked body 28 with a semiconductor chip in which 26 is arranged is prepared.

(pedestal)
The pedestal 22 preferably has a certain level of strength. The pedestal 22 is not particularly limited, and examples thereof include compound wafers such as silicon wafers, SiC wafers, and GaAs wafers, glass wafers, metal foils such as SUS, 6-4 Alloy, Ni foil, and Al foil. In the case of adopting a round shape in plan view, a silicon wafer or a glass wafer is preferable. Moreover, when it is a rectangle by planar view, a SUS board or a glass plate is preferable.

  Moreover, as the base 22, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, etc. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide , Polyphenyl sulphates id, aramid (paper), can be glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, also possible to use paper or the like.

  The pedestal 22 may be used alone or in combination of two or more. Although the thickness of a base is not specifically limited, For example, it is about 10 micrometers-about 20 mm normally.

(Adhesive layer)
Although it does not specifically limit as an adhesive composition which comprises the adhesive bond layer 24, After the process (process D) of thermosetting a thermosetting resin sheet, it is the 1st laminated body 20 from the thermosetting resin sheet 40. FIG. To peel off. Therefore, it is preferable that the adhesive layer 24 is formed of a material capable of expressing light releasability after the step of thermosetting the thermosetting resin sheet (step D). Examples of the adhesive composition constituting the adhesive layer 24 include a polyimide resin having an imide group and a structural unit derived from a diamine having an ether structure at least in part, and a precursor of the polyimide resin. And polyamic acid, a silicone resin, and a combination of a thermoplastic resin and a thermosetting resin.

  The polyimide resin can be generally obtained by imidizing (dehydrating and condensing) a polyamic acid that is a precursor thereof. As a method for imidizing the polyamic acid, for example, a conventionally known heat imidization method, azeotropic dehydration method, chemical imidization method and the like can be employed. Of these, the heating imidization method is preferable. When the heat imidization method is employed, it is preferable to perform heat treatment under a nitrogen atmosphere or an inert atmosphere such as a vacuum in order to prevent deterioration of the polyimide resin due to oxidation.

  The polyamic acid is charged in an appropriately selected solvent such that an acid anhydride and a diamine (including both a diamine having an ether structure and a diamine not having an ether structure) have a substantially equimolar ratio. Can be obtained by reaction.

The polyimide resin preferably has a structural unit derived from a diamine having an ether structure. The diamine having an ether structure is not particularly limited as long as it is a compound having an ether structure and having at least two terminals having an amine structure. Among the diamines having an ether structure, a diamine having a glycol skeleton is preferable. When the polyimide resin has a structural unit derived from a diamine having an ether structure, particularly a structural unit derived from a diamine having a glycol skeleton, heating the adhesive layer 24 may reduce the adhesive force. it can. With respect to this phenomenon, the present inventors presume that the ether structure is detached from the resin constituting the adhesive layer 24 by heating, and the adhesive force is reduced due to the removal.
The fact that the ether structure or the glycol skeleton is detached from the resin constituting the adhesive layer 24 is, for example, FT-IR (Fourier Transform Infrared Spectroscopy) before and after heating at 300 ° C. for 30 minutes. The spectra can be confirmed by comparing the spectra of 2800 to 3000 cm ⁻¹ before and after heating.

  Examples of the diamine having a glycol skeleton include a polypropylene glycol structure and a diamine having one amino group at each end, a polyethylene glycol structure, and one amino group at each end. Examples thereof include a diamine having a polytetramethylene glycol structure and a diamine having an alkylene glycol such as a diamine having one amino group at each end. Moreover, the diamine which has two or more of these glycol structures and has one amino group in both the ends can be mentioned.

  The molecular weight of the diamine having an ether structure is preferably in the range of 100 to 5000, and more preferably 150 to 4800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5000, it is easy to obtain the adhesive layer 24 having high adhesive strength at low temperatures and exhibiting peelability at high temperatures.

  In the formation of the polyimide resin, a diamine having no ether structure can be used in combination with a diamine having an ether structure. Examples of the diamine having no ether structure include aliphatic diamines and aromatic diamines. By using a diamine having no ether structure in combination, the adhesion with the adherend can be controlled. The mixing ratio of the diamine having an ether structure and the diamine having no ether structure is preferably in the range of 100: 0 to 10:90, more preferably 100: 0 to 20: in terms of molar ratio. 80, more preferably 99: 1 to 30:70. When the mixing ratio of the diamine having an ether structure and the diamine having no ether structure is within a range of 100: 0 to 10:90 in terms of molar ratio, the thermal peelability at a high temperature is excellent.

  Examples of the aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane, 4,9-dioxa-1,12-diaminododecane, , 3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane (α, ω-bisaminopropyltetramethyldisiloxane) and the like. The molecular weight of the aliphatic diamine is usually 50 to 1,000,000, preferably 100 to 30,000.

  Examples of the aromatic diamine include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, and 4,4′-diaminodiphenylpropane. 3,3′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfide, 3,3′-diaminodiphenyl sulfide, 4,4′-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) -2,2- Dimethylpropane, 4,4'-diaminobenzophenone, etc. It is. The molecular weight of the aromatic diamine is usually 50 to 1000, preferably 100 to 500. The molecular weight of the aliphatic diamine and the molecular weight of the aromatic diamine are values measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene (weight average molecular weight).

  Examples of the acid anhydride include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2-bis (2, 3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) methane dianhydride Bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) sulfone Anhydride, pyromellitic dianhydride, ethylene glycol bis trimellitic dianhydride and the like. These may be used alone or in combination of two or more.

  Examples of the solvent for reacting the acid anhydride with the diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, N, N-dimethylformamide, and cyclopentanone. These may be used alone or in combination. Further, in order to adjust the solubility of raw materials and resins, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

  Examples of the silicone resin include peroxide cross-linked silicone pressure-sensitive adhesives, addition reaction type silicone pressure-sensitive adhesives, dehydrogenation reaction type silicone pressure-sensitive adhesives, and moisture-curing type silicone pressure-sensitive adhesives. The said silicone resin may be used individually by 1 type, and may use 2 or more types together. When the silicone resin is used, the heat resistance becomes high, and the storage elastic modulus and adhesive strength at high temperatures can be appropriate values. Among the silicone resins, addition reaction type silicone pressure-sensitive adhesives are preferable in terms of few impurities.

  When the silicone resin is used for the adhesive layer 24, the adhesive layer 24 may contain other additives as necessary. Examples of such other additives include flame retardants, silane coupling agents, and ion trapping agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. Such other additives may be only one kind or two or more kinds.

(Formation method of 1st laminated body)
The first laminate 20 is obtained by forming the adhesive layer 24 on the pedestal 22. The adhesive layer 24 is formed by applying a solution containing a composition for forming the adhesive layer 24 to the pedestal 22, or applying the solution on an appropriate separator (such as release paper) to form the adhesive layer 24. And the 1st laminated body 20 can be obtained by the method of transcribe | transferring this to the base 22 (transfer).

(Method for forming first laminated body with semiconductor chip)
In the first stacked body 28 with a semiconductor chip, a plurality of semiconductor chips 26 are arranged on the adhesive layer 24 so that the adhesive layer 24 and the circuit formation surface 26a of the semiconductor chip 26 face each other (see FIG. 1). A known device such as a flip chip bonder or a die bonder can be used for the arrangement of the semiconductor chip 26.

  Thus, the first stacked body 28 with a semiconductor chip can be prepared.

[Step of obtaining second laminate]
Next, as shown in FIG. 2, a thermosetting resin sheet 40 is disposed on the surface of the first stacked body 28 with semiconductor chips on the side where the plurality of semiconductor chips 26 are exposed, so that the second stacked body is formed. 30 is obtained (step B).

(Thermosetting resin sheet)
The thermosetting resin sheet 40 has a function of sealing the semiconductor chip 26. Examples of the constituent material of the thermosetting resin sheet 40 include a combination of a thermoplastic resin and a thermosetting resin. A thermosetting resin alone can also be used.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, dodecyl group and the like.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode the semiconductor chip is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  Moreover, an inorganic filler can be suitably mix | blended with the thermosetting resin sheet 40. FIG. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the storage elastic modulus, and the like.

  Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. And various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbons. These can be used alone or in combination of two or more. Among these, silica, particularly fused silica is preferably used.

  The average particle size of the inorganic filler is preferably in the range of 0.1 to 30 μm, and more preferably in the range of 0.5 to 25 μm. In the present invention, inorganic fillers having different average particle sizes may be used in combination. The average particle size is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  The blending amount of the inorganic filler is preferably set to 100 to 1400 parts by weight with respect to 100 parts by weight of the organic resin component. Particularly preferred is 230 to 900 parts by weight. When the blending amount of the inorganic filler is 100 parts by weight or more, heat resistance and strength are improved. Moreover, fluidity | liquidity is securable by setting it as 1400 weight part or less. Thereby, it can prevent that adhesiveness and embedding fall.

  In addition to the said inorganic filler, another additive can be suitably mix | blended with the thermosetting resin sheet 40 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, pigments such as carbon black, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more. In consideration of improvement in viscosity at high temperature curing, an elastomer component may be added as an additive for viscosity adjustment. The elastomer component is not particularly limited as long as it thickens the resin. For example, various acrylic copolymers such as polyacrylic acid ester; polystyrene-polyisobutylene copolymer, styrene acrylate copolymer, etc. And an elastomer having a styrene skeleton; rubber polymers such as butadiene rubber, styrene-butadiene rubber (SBR), ethylene-vinyl acetate copolymer (EVA), isoprene rubber and acrylonitrile rubber.

  As for the thermosetting resin sheet 40, it is preferable that the glass transition temperature before thermosetting is 50 degreeC or more, It is more preferable to exist in the range of 50-200 degreeC, and it exists in the range of 80-150 degreeC. Further preferred. When the glass transition temperature before thermosetting of the thermosetting resin sheet 40 is 50 ° C. or more, the heat resistance is excellent.

  The thermosetting resin sheet 40 preferably has a tensile storage modulus at 25 ° C. after thermosetting in the range of 0.1 Gpa to 30 Gpa, and more preferably in the range of 1 Gpa to 20 Gpa. When the tensile storage elastic modulus at 25 ° C. after thermosetting of the thermosetting resin sheet 40 is 0.1 Gpa or more, it has a certain degree of strength and is easy to maintain its shape, so that it is excellent in handling properties, while at 30 Gpa or less. If there is, it is excellent in that stress can be relaxed.

  The viscosity at 100 ° C. of the thermosetting resin sheet 40 is preferably 10 to 5000 Pa · s, and more preferably 50 to 3000 Pa · s. When the viscosity is 50 Pa · s or more, the surface shape can be prevented from being greatly deformed during thermosetting. Moreover, the semiconductor chip 26 can be embedded suitably by setting it as 5000 Pa.s or less.

  The thickness of the thermosetting resin sheet 40 is a semiconductor chip embedded in the thermosetting resin sheet 40 in the third laminated body 60 obtained by the process C (step for obtaining two third laminated bodies) described later. The distance d (see FIG. 4) from the upper surface of the thermosetting resin sheet 40 to the surface of the thermosetting resin sheet 40 on the intermediate film side 50 is preferably within a range of 20 μm to 300 μm, preferably within a range of 25 μm to 200 μm. The thing of thickness which becomes is more preferable. Usually, since the thickness of the semiconductor chip is about 50 μm to 500 μm, the thickness of the thermosetting resin sheet 40 (the total thickness of the thermosetting resin sheet 40) is preferably 70 μm to 800 μm, and 75 μm to 700 μm. Is more preferable. When the distance d is within the range of 20 μm to 300 μm, it is excellent in that the semiconductor chip can be prevented from being exposed and the warp of the thermosetting resin sheet and the stress applied to the thermosetting resin sheet can be reduced.

  As a process of forming the thermosetting resin sheet 40, for example, a process of forming an application layer by applying an adhesive composition solution that is a constituent material of the thermosetting resin sheet 40 on a release film, Then, the method of performing the process of drying the said application layer is mentioned.

  The method for applying the adhesive composition solution is not particularly limited, and examples thereof include a method using a comma coating method, a fountain method, a gravure method, and the like. What is necessary is just to set suitably as coating thickness so that the thickness of the thermosetting resin sheet 40 finally obtained by drying an application layer may be in the range of 10-100 micrometers.

  The release film is not particularly limited, and examples thereof include those in which a release coat layer such as a silicone layer is formed on the surface of the release film that is bonded to the thermosetting resin sheet 40. Moreover, as a base material of a release film, the resin film which consists of paper materials, such as glassine paper, polyethylene, a polypropylene, polyester, etc. is mentioned, for example.

  The coating layer is dried by blowing a drying air onto the coating layer. Examples of the spraying of the dry air include a method in which the spraying direction is parallel to the conveying direction of the release film and a method in which the drying air is perpendicular to the surface of the coating layer. The air volume of the drying air is not particularly limited, and is usually 5 to 20 m / min, preferably 5 to 15 m / min. By setting the air volume of the drying air to 5 m / min or more, it is possible to prevent the coating layer from being insufficiently dried. On the other hand, by setting the air volume of the drying air to 20 m / min or less, the concentration of the organic solvent near the surface of the coating layer is made uniform, so that the evaporation can be made uniform. As a result, it is possible to form the thermosetting resin sheet 40 having a uniform surface state in the plane.

  The drying time is appropriately set according to the coating thickness of the adhesive composition solution, and is usually in the range of 1 to 5 minutes, preferably 2 to 4 minutes. By setting the drying time to 1 min or longer, the curing reaction does not proceed sufficiently, and it is possible to suppress an increase in the amount of unreacted curing component and remaining solvent. As a result, it is possible to prevent the problem of outgas and void from occurring in the subsequent process. On the other hand, it can suppress that a hardening reaction advances too much by setting it as less than 5 minutes.

  A drying temperature is not specifically limited, Usually, it sets within the range of 70-160 degreeC. In the present embodiment, it is preferable to increase the drying temperature stepwise as the drying time elapses. Specifically, for example, it is set within a range of 70 ° C. to 100 ° C. in the initial stage of drying (1 min or less immediately after drying), and is set within a range of 100 to 160 ° C. in the late stage of drying (over 1 min and 5 min or less). . Thereby, generation | occurrence | production of the pinhole on the surface of an application layer which arises when a drying temperature is raised rapidly immediately after coating can be prevented. Thereby, the thermosetting resin sheet 40 which concerns on this embodiment can be manufactured.

[Step of obtaining two third laminates]
Next, two second laminated bodies 30 are manufactured by carrying out the step A and the step B, and the thermosetting resin sheet 40 surfaces of the two second laminated bodies 30 are bonded to the intermediate film 50. (See FIG. 3). Subsequently, by applying pressure from both the pedestal 22 side toward the thermosetting resin sheet 40 side, the plurality of semiconductor chips 26 are embedded in the thermosetting resin sheet 40, and the pedestal 22, the adhesive layer 24, Two third laminated bodies 60 having the thermosetting resin sheet 40 embedded with the semiconductor chip 26 are obtained (step C) (see FIG. 4).

  The conditions at the time of pressurization in the step C are preferably a temperature of 70 ° C. to 130 ° C., a pressure of 0.2 Mpa to 5 Mpa, and a vacuum degree of 0.1 to 20 torr, more preferably a temperature of 80 ° C. to 120 ° C. ° C, pressure 0.3 Mpa to 4 Mpa, degree of vacuum 0.5 to 18 torr. The semiconductor chip 26 can be suitably embedded in the thermosetting resin sheet 40 when the pressing condition in the step C is within the above range.

(Intermediate film)
The intermediate film 50 is for preventing the thermosetting resin sheets 40 from being bonded to each other in the step D described later. The intermediate film 50 is not particularly limited, and examples thereof include a polyethylene terephthalate (PET) film, a polyolefin film, a polymethylpentene film, a polyimide film, and a polyethylene terephthalate (PET) film. For example, the intermediate film 50 may be used as it is with a separator that has been used when the thermosetting resin sheet 40 is manufactured.

  The melting point of the intermediate film 50 is preferably 150 ° C. or higher, more preferably 170 ° C. or higher, from the viewpoint of heat resistance. Moreover, although the said melting | fusing point is so preferable that it is high, 300 degrees C or less and 250 degrees C or less are mentioned, for example.

  The surface roughness Ra of the intermediate film 50 is preferably 50 nm to 100 μm, and more preferably 60 nm to 90 μm. If the surface roughness Ra of the intermediate film 50 is 50 nm to 100 μm, the intermediate film can be more suitably peeled from the thermosetting resin sheet 40 in step E described later. Examples of the method for setting the surface roughness Ra of the intermediate film 50 within the above numerical range include transfer from a metal roll having irregularities.

  The intermediate film 50 is preferably subjected to a release treatment on the surface. When the surface of the intermediate film 50 is subjected to the mold release treatment, the intermediate film can be more preferably peeled from the thermosetting resin sheet in the step E described later. Examples of the release treatment include a method of applying a release agent to the intermediate film 50. Examples of the release agent include a long chain alkyl group-containing polymer, a silicone-based polymer, a perfluoro-based polymer, a fluorinated polyolefin, and a polyolefin. As a coating method, the mold release agent is dissolved in a solvent, the solution is applied, the mold release agent is emulsified in water, the emulsion is applied, the mold release agent is melted, and the intermediate film 50 and A laminating hot melt method can be used, but the most common method is to dissolve the release agent in a solvent and apply. Examples of the solvent used in this solvent-type coating method include toluene, ethyl acetate, isopropyl alcohol, hexane, heptane and the like.

  The thickness of the intermediate film 50 is not particularly limited, but is preferably in the range of 20 μm to 1000 μm from the viewpoint of strength.

[Step of thermosetting thermosetting resin sheet]
After the step C, the thermosetting resin sheet 40 of the third laminated body 60 is left in a state where the two thermosetting resin sheet 40 surfaces of the third laminated body 60 face each other through the intermediate film 50. Is thermally cured (step D). While the thermosetting resin sheet 40 of the third laminate 60 is thermoset, the thermosetting resin sheet 40 is thermoset while being sandwiched between the two pedestals 22. As a result, warpage of the thermosetting resin sheet 40 during thermosetting can be suppressed. Moreover, since two 3rd laminated bodies can be obtained by one press (process C) and thermosetting (process D), it is excellent in productivity. The heating temperature at this time is preferably 90 to 200 ° C, more preferably 120 to 175 ° C. The heating time is preferably 30 to 240 minutes, and more preferably 60 to 180 minutes. By setting the temperature and time at the time of thermosetting within the above numerical range, the thermosetting resin sheet 40 can be suitably cured in the step of thermosetting the thermosetting resin sheet.

[Step of peeling intermediate film]
After the step D, as shown in FIG. 5, the intermediate film 50 is peeled from the third laminate 60 (step E). Although it does not restrict | limit especially as said peeling method, force is applied up and down, and it isolate | separates into the 3rd laminated body 60 and the 3rd laminated body 60 with the intermediate film 50, Then, the 3rd with the intermediate film 50 is attached. A method of peeling the intermediate film 50 from the laminate 60 by T peel peeling, 180 ° peel peeling or the like can be mentioned. Thereby, the two 3rd laminated bodies 60 can be obtained.

  The peel strength between the intermediate film 50 after the step D and the thermosetting resin sheet 40 (thermosetting resin sheet 40 after thermosetting) is 1000 mN / min under the conditions of a peeling angle of 180 ° and a peeling speed of 300 m / min. It is preferably cm or less, more preferably 800 mN / cm or less, and even more preferably 100 mN / cm or less. Moreover, although the said peeling strength is so preferable that it is small, it can be 10 mN / cm or more and 30 mN / cm or more, for example. When the peel strength is 1000 mN / cm or less, the intermediate film 50 can be suitably peeled from the thermosetting resin sheet 40 without roughening the surface of the thermosetting resin sheet 40.

[Step of peeling the first laminate]
After the said process E, as shown in FIG. 6, the 1st laminated body 20 is peeled from the thermosetting resin sheet 40 (process F). As a peeling method, the adhesive layer 24 of the first laminate 20 is dissolved with a solvent to reduce the adhesive force and the adhesive layer 24 is made of a material whose adhesive strength is reduced by heating. Examples of the method include a method in which the adhesive strength is reduced by heating and peeling, and a method in which the adhesive layer 24 is peeled by physically cutting with a cutter, a laser, or the like.

[Process for forming wiring]
After the step F, as shown in FIG. 7, wirings 42 are formed on the thermosetting resin sheet 40 (step G).

  As a method of forming the wiring 42, for example, a metal seed layer is formed on the exposed semiconductor chip 26 using a known method such as a vacuum film forming method, and the wiring 42 is formed by a known method such as a semi-additive method. 42 can be formed.

  After this, an insulating layer such as polyimide or PBO may be formed on the wiring 42 and the thermosetting resin sheet 40.

  A bumping process for forming bumps on the formed wirings 42 may be performed. The bumping process can be performed by a known method such as a solder ball or solder plating.

  Thereafter, as necessary, the laminated body composed of elements such as the semiconductor chip 26, the thermosetting resin sheet 40, and the wiring 42 is diced. As a result, it is possible to obtain a semiconductor leaving the wiring outside the chip region. A conventionally known method can be adopted as the dicing method.

  In the above-described embodiment, the case where the intermediate film of the present invention is one layer of the intermediate film 50 has been described. However, the intermediate film in this invention is not limited to this example, You may be comprised from the peelable film provided in the both surfaces of the support plate and the said support plate.

  FIG. 8 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to another embodiment of the present invention. As shown in FIG. 8, the intermediate film 150 includes a support plate 152 and a peelable film 154 provided on both surfaces of the support plate 152.

  The support plate 152 is preferably made of a material that is not easily deformed, and examples thereof include a metal plate and a glass epoxy resin plate.

  Examples of the peelable film 154 include a polyethylene terephthalate (PET) film, a polyolefin-based film, a polymethylpentene-based film, a polyimide film, and a polyethylene terephthalate (PET) film. For the peelable film 154, for example, a separator that has been used when the thermosetting resin sheet 40 is manufactured may be used as it is. In this case, the pressure may be applied with the thermosetting resin sheets 40 with separators (the third laminated bodies 60 having the thermosetting resin sheets 40 with separators) opposed to each other via the support plate 152. That is, it is sufficient to prepare only the support plate 152 without preparing the peelability 154 separately.

  Since the intermediate film 150 is composed of the support plate 152 and the peelable film 154 provided on both surfaces of the support plate 152, the surface of the thermosetting resin sheet 40 is flattened by the support plate 152 that is not easily deformed. While ensuring, the peelability from the thermosetting resin sheet 40 can be secured by the peelable film 154. In addition, since the manufacturing method of the semiconductor device which concerns on other embodiment is the same as that of embodiment mentioned above except having replaced the intermediate | middle film 50 with the intermediate | middle film 150, description here is abbreviate | omitted.

In the above-described embodiment, by applying pressure with the thermosetting resin sheet surfaces of the two second laminates facing each other, a plurality of semiconductor chips are embedded in the thermosetting resin sheet, and the base, the adhesive layer, The case where two third laminated bodies having a thermosetting resin sheet embedded with a semiconductor chip are obtained (step C) has been described. However, it is not limited to this example from the viewpoint of improving production efficiency. FIG. 9 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to another embodiment. As shown in FIG. 9, from the viewpoint of improving the production efficiency, the pedestal 22 surfaces of the two second laminated bodies 30 are opposed to each other, and from both thermosetting resin sheet 40 sides by a mold, a flat plate, or the like. By applying pressure toward the base 22 side, the plurality of semiconductor chips 26 are embedded in the thermosetting resin sheet 40, and the base 22, the adhesive layer 24, and the thermosetting resin sheet 40 embedded with the semiconductor chips 26 are combined. You may obtain two 3rd laminated bodies 60 which have. In this case, the intermediate film is not necessary. That is, as another embodiment, the following can be mentioned.
A method for manufacturing a semiconductor device, comprising:
Preparing a first laminated body with a semiconductor chip in which a plurality of semiconductor chips are arranged on a first laminated body provided with an adhesive layer on a pedestal;
Step B of obtaining a second laminate by disposing a thermosetting resin sheet on the surface of the first laminate with semiconductor chips prepared in Step A-1 on the side where the plurality of semiconductor chips are exposed. -1,
By applying pressure with the pedestal surfaces of the two second laminates facing each other, the plurality of semiconductor chips are embedded in the thermosetting resin sheet, and the pedestal, the adhesive layer, and the semiconductor chip are embedded in the heat Step C-1 for obtaining two third laminates having a curable resin sheet;
After the step C-1, the step D-1 of thermosetting the thermosetting resin sheet of the third laminate, with the pedestal surfaces of the two third laminates facing each other; ,
After Step D-1, Step F-1 for peeling the first laminate from the thermosetting resin sheet;
After the said process F-1, the manufacturing method of the semiconductor device containing process G-1 which forms wiring on the said thermosetting resin sheet.

  The embodiment of the present invention has been described above, but the present invention is not limited to the above-described example, and it is possible to make design changes as appropriate within a range that satisfies the configuration of the present invention.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the scope of the present invention only to those unless otherwise specified. The term “parts” means parts by weight.

(Preparation of pedestal)
An 8-inch wafer having a thickness of 700 μm was prepared as a pedestal.

(Preparation of adhesive layer)
In an atmosphere under a nitrogen stream, 365 g of polyetherdiamine (manufactured by Heinzmann, D-4000, molecular weight: 4023.5), 4,4′-diaminodiphenyl ether (DDE) in 1257 g of N, N-dimethylacetamide (DMAc). , 74 g of molecular weight: 200.2) and 100 g of pyromellitic dianhydride (PMDA, molecular weight: 218.1) were mixed and reacted at 70 ° C. Then, it cooled to room temperature (23 degreeC), and obtained the polyamic acid solution. The obtained polyamic acid solution was applied to a 200 mm wafer as a support at 10 ° C. after drying at 120 ° C. for 10 minutes to obtain a polyamic acid film with a support. The obtained polyamic acid film with a support was thermally cured at 300 ° C. for 3 hours in a nitrogen atmosphere to obtain a polyimide film with a support. This polyimide film was used as an adhesive layer.

(Preparation of thermosetting resin sheet)
The following (a) to (f) are blended with a mixer, kneaded for 2 minutes at 120 ° C. with a twin-screw kneader, and then extruded from a die to give a thermosetting resin having a thickness of 500 μm. A sheet was obtained.
(A) Epoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., YSLV-80XY) 280 parts (b) Phenol resin (Maywa Kasei Co., Ltd., MEH-7785-SS 300 parts) (c) Curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2P4MHZ-PW) 6 parts (d) Silica filler (manufactured by Denki Kagaku Kogyo Co., Ltd., FB-9454) 3300 parts (e) Silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403) 10 parts (f) Carbon (Mitsubishi Chemical Co., # 40) 10 parts

(Preparation of intermediate film)
As an intermediate film, a polymethylpentene film (manufactured by Mitsui Chemicals, TPX film, circular with a diameter of 8.5 inches, thickness: 100 μm, surface roughness Ra: 0.4 μm) was prepared as an intermediate film. The surface roughness was measured using a surface shape measuring device (Dektak 8M) manufactured by Veeco. The measurement conditions were room temperature (23 ° C.) and a measurement speed of 5 μm / s.

(Measurement of glass transition temperature of thermosetting resin sheet)
It was 110 degreeC as a result of measuring the glass transition temperature of the produced thermosetting resin sheet. The glass transition temperature is measured by cutting a thermosetting resin sheet into a strip having a thickness of 500 μm, a width of 10 mm, and a length of 50 mm with a cutter knife, and using a dynamic viscoelasticity measuring device (DMA), 25 ° C. to 250 ° C. Is obtained as a temperature at which Tan δ (E ″ (loss elastic modulus) / E ′ (storage elastic modulus)) shows a maximum value when measured under the conditions of a frequency of 1.0 Hz and a temperature rising rate of 10 ° C./min. It was.

(Storage elastic modulus measurement at 25 ° C. after thermosetting of thermosetting resin sheet)
The created thermosetting resin sheet was thermoset at 150 ° C. for 1 hour. Next, it was 3 GPa as a result of measuring the storage elastic modulus in 25 degreeC after the thermosetting of the thermosetting resin sheet. Here, the storage elastic modulus is a thermosetting resin sheet cut into a strip shape having a thickness of 500 μm, a width of 10 mm, and a length of 50 mm with a cutter knife, and using a dynamic viscoelasticity measuring device (DMA), 25 ° C., frequency It is the value of the tensile storage elastic modulus E ′ when measured under the condition of 1.0 Hz.

(Measurement of viscosity of thermosetting resin sheet at 100 ° C.)
It was 2000 Pa * s as a result of measuring the viscosity in 100 degreeC of the produced thermosetting resin sheet. Viscosity measurement here was performed by punching a thermosetting resin sheet into a circle having a thickness of 500 μm and a diameter of 8 mm, and using a viscoelastic spectrometer (ARES) manufactured by Rheometric Scientific, at a strain of 2%, a frequency of 1 Hz, and 100 ° C. This is the value of the complex viscosity η * obtained by measurement.

Example 1
The prepared polyimide film (adhesive layer) was bonded to an prepared 8-inch wafer (pedestal) to form a first laminate. Thereafter, a plurality of semiconductor chips (5 mm × 5 mm × thickness 350 μm) were arranged on the polyimide film to form a first laminated body with semiconductor chips (see FIG. 1).

  Next, the prepared thermosetting resin sheet was disposed on the surface of the first laminated body with the semiconductor chip on the side where the plurality of semiconductor chips are exposed to obtain a second laminated body (see FIG. 2). . Two such second laminates were prepared.

  Next, the thermosetting resin sheet surfaces of the two second laminates were arranged to face each other through the prepared intermediate film (see FIG. 3). Thereafter, thermocompression bonding was performed using a vacuum press, the semiconductor chip was embedded in a thermosetting resin sheet, and two third laminated bodies were manufactured simultaneously (see FIG. 4). The thermocompression bonding conditions were an embedding temperature of 90 ° C., a vacuum degree of 10 torr, an embedding pressure of 1 MPa, and an embedding time of 60 seconds. In the third laminate 60, the distance d (see FIG. 4) from the upper surface of the semiconductor chip embedded in the thermosetting resin sheet to the surface on the intermediate film side of the thermosetting resin sheet is 150 μm. It was.

  Next, in this state, the two third laminates were cured by heating. The curing conditions were a curing temperature of 150 ° C. and a curing time of 1 hour. Since it was being fixed by the base of both sides, the curvature was not confirmed by the curable resin sheet after hardening.

Thereafter, the intermediate film was peeled from the third laminate. Peeling was easy.
The peel strength between the intermediate film and the thermosetting resin sheet was measured using a tensile tester (manufactured by Shimadzu Corp., Autograph), and it was 30 mN / cm under the conditions of a peel angle of 180 ° and a peel speed of 300 m / min. Met.

  It was 0.5 mm or less when the curvature of the laminated body after peeling a 3rd laminated body was measured. The warpage was measured by placing it on a flat table with the 8-inch wafer surface serving as a pedestal down, and measuring the farthest distance from the table with a metal ruler.

DESCRIPTION OF SYMBOLS 20 1st laminated body 22 Base 24 Adhesive bond layer 26 Semiconductor chip 26a Circuit formation surface 28 1st laminated body with a semiconductor chip 30 2nd laminated body 40 Thermosetting resin sheet 42 Wiring 50 Intermediate film 60 3rd laminated body 150 intermediate film 152 support plate 154 peelable film

Claims (9)

A method for manufacturing a semiconductor device, comprising:
Preparing a first laminated body with a semiconductor chip in which a plurality of semiconductor chips are arranged on a first laminated body provided with an adhesive layer on a pedestal; and
A step B of obtaining a second laminated body by disposing a thermosetting resin sheet on the surface of the first laminated body with a semiconductor chip prepared in the step A on the side where the plurality of semiconductor chips are exposed;
By applying pressure with the thermosetting resin sheet surfaces of the two second laminates facing each other through an intermediate film, the plurality of semiconductor chips are embedded in the thermosetting resin sheet and bonded to the base. Step C for obtaining two third laminated bodies each having an agent layer and a thermosetting resin sheet embedded with a semiconductor chip;
After the step C, the thermosetting resin sheet of the third laminated body is left in a state where the thermosetting resin sheet surfaces of the two third laminated bodies are opposed to each other through the intermediate film. Thermosetting step D;
After the step D, a step E of peeling the intermediate film from the third laminate,
After the step E, the method for manufacturing a semiconductor device includes a step F of forming a wiring on the thermosetting resin sheet.   The peel strength between the intermediate film and the thermosetting resin sheet after the step D is 1000 mN / cm or less under the conditions of a peel angle of 180 ° and a peel speed of 300 m / min. The manufacturing method of the semiconductor device as described in any one of Claims 1-3.   The method for manufacturing a semiconductor device according to claim 1, wherein the intermediate film has a surface roughness Ra of 50 nm to 100 μm.   The method for manufacturing a semiconductor device according to claim 1, wherein a surface of the intermediate film is subjected to a release treatment.   5. The method of manufacturing a semiconductor device according to claim 1, wherein the intermediate film includes a support plate and a peelable film provided on both surfaces of the support plate. 6.   The method for manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin sheet has a glass transition temperature of 50 ° C. or higher before thermosetting.   The said thermosetting resin sheet has the tensile storage elastic modulus in 25 degreeC after thermosetting in the range of 0.1 Gpa-30 Gpa, The semiconductor device of any one of Claims 1-6 characterized by the above-mentioned. Production method.   In the third laminate obtained in the step C, the distance from the upper surface of the semiconductor chip embedded in the thermosetting resin sheet to the surface on the intermediate film side of the thermosetting resin sheet is 20 μm. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is in a range of ˜300 μm. The conditions at the time of pressurization in the step C are within a range of a temperature of 70 ° C. to 130 ° C., a pressure of 0.2 Mpa to 5 Mpa, and a degree of vacuum of 0.1 to 20 torr,
The method for manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin sheet has a viscosity at 100 ° C. of 10 to 5000 Pa · s.

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