JP2003273316A - Semiconductor manufacturing system and its manufacturing method - Google Patents

Semiconductor manufacturing system and its manufacturing method

Info

Publication number
JP2003273316A
JP2003273316A JP2002070682A JP2002070682A JP2003273316A JP 2003273316 A JP2003273316 A JP 2003273316A JP 2002070682 A JP2002070682 A JP 2002070682A JP 2002070682 A JP2002070682 A JP 2002070682A JP 2003273316 A JP2003273316 A JP 2003273316A
Authority
JP
Japan
Prior art keywords
tape
strip
resin sealing
resin
sealing member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002070682A
Other languages
Japanese (ja)
Inventor
Nobuhide Morimoto
信英 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Priority to JP2002070682A priority Critical patent/JP2003273316A/en
Publication of JP2003273316A publication Critical patent/JP2003273316A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a low-cost thin semiconductor device and its manufacturing method without performing polishing by which much time may be wasted and an unnecessary residual stress may be applied to the semiconductor chip. <P>SOLUTION: Several band members which are composed of tape, several semiconductor chips arranged lengthwise and crosswise on its surface, and several electrode terminals protruding from its underside, are vertically stacked into a multilayer structure and are resin sealed. The multilayer resin sealed member 13 which is resin sealed and shaped into a block is cut by a blade 18 by chipping off the inactive surface of several semiconductor chips which are resin sealed in one plane for dividing the member 13 into individual single- layer resin sealed members 17. Individual semiconductor devices are further obtained by the blade 18. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、複数の半導体チッ
プが搭載されたフレキシブルな基板の複数枚を積み重ね
て樹脂封止してなる樹脂封止体を一個の半導体チップが
含む領域毎に分割分離して得られる半導体装置およびそ
の製造方法並びに前記得られた複数の半導体装置を多段
に積み重ねて組立られるスタック型の半導体装置および
その製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin encapsulation formed by stacking a plurality of flexible substrates on which a plurality of semiconductor chips are mounted and encapsulating with a resin, and dividing the resin encapsulation into regions each of which includes one semiconductor chip. The present invention relates to a semiconductor device obtained by the above method, a method for manufacturing the same, a stack type semiconductor device in which a plurality of the obtained semiconductor devices are stacked in multiple stages, and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、半導体装置は、電子装置の小型化
に伴ってパッケ−ジ体の薄く成形できる要望が要求され
るように至った。また、高密度で小型のスタックモジュ
−ル構造の半導体装置の要望も叫ばれていた。
2. Description of the Related Art In recent years, semiconductor devices have been required to be able to form a thin package as the electronic devices have been downsized. Further, a demand for a semiconductor device having a high density and a small stack module structure has been demanded.

【0003】この薄型の半導体装置の一例として、例え
ば、特開2001−57404号公報に開示されてい
る。この半導体装置は、基板に複数の半導体チップをフ
ェ−スダウンで接合し樹脂封止してなる樹脂成形体に成
形する。しかる後、樹脂を含む非活性表面側の複数の半
導体チップ面を所定の厚さまで研磨し、薄くなった樹脂
成形体を一つづ半導体チップを含む領域毎に分割分離し
複数の半導体装置を製作することを特徴としている。
An example of this thin semiconductor device is disclosed in, for example, Japanese Patent Laid-Open No. 2001-57404. In this semiconductor device, a plurality of semiconductor chips are bonded to a substrate by face-down and molded into a resin molded body obtained by resin sealing. Then, a plurality of semiconductor chip surfaces on the non-active surface side containing the resin are polished to a predetermined thickness, and the thinned resin molded body is divided and separated into regions including the semiconductor chip to fabricate a plurality of semiconductor devices. It is characterized by that.

【0004】一方、スタック型の半導体装置としては、
例えば、特開平8−236694号公報に開示されてい
る。この半導体装置は、配線導体が形成されたセラミッ
クキャリア基板もしくはフレキシブル基板に微小バンプ
を介してLSIチップが搭載されている半導体チップ構
成体を樹脂封止し一つのLSIチップを含む樹脂成形体
を得ている。
On the other hand, as a stack type semiconductor device,
For example, it is disclosed in JP-A-8-236694. In this semiconductor device, a semiconductor chip structure in which an LSI chip is mounted on a ceramic carrier substrate or a flexible substrate on which wiring conductors are formed via minute bumps is resin-sealed to obtain a resin molded body including one LSI chip. ing.

【0005】そして、LSIチップの非活性表面側を研
磨して薄い一つのLSIチップを含む半導体装置を得
て、これら半導体装置の複数枚を接着材で積み重ね基板
の配線導体で接続しスタック状の半導体装置に組み立て
ることを特徴としている。
Then, the non-active surface side of the LSI chip is polished to obtain a semiconductor device including one thin LSI chip, and a plurality of these semiconductor devices are stacked with an adhesive material and connected by a wiring conductor of a substrate to form a stack. It is characterized by being assembled into a semiconductor device.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上述し
た半導体装置では、薄くするために、半導体チップを研
磨しなければならない。この研磨工数は非常に時間がか
かるという問題がある。しかも片面を研磨するので残留
応力が生じ半導体チップに反りを生じさせ半導体チップ
と樹脂との間に剥離を起こすという問題がある。
However, in the above-described semiconductor device, the semiconductor chip must be polished in order to reduce the thickness. There is a problem that this polishing man-hour takes a very long time. Moreover, since one surface is polished, there is a problem that residual stress is generated and the semiconductor chip is warped to cause separation between the semiconductor chip and the resin.

【0007】従って、本発明の目的は、多くの時間の浪
費や半導体チップに不必要な残留応力を与える研磨をす
ることなく安価に得られる半導体装置およびその製造方
法を提供することにある。
Therefore, an object of the present invention is to provide a semiconductor device which can be obtained at a low cost without spending a lot of time and polishing which gives unnecessary residual stress to a semiconductor chip, and a manufacturing method thereof.

【0008】[0008]

【課題を解決するための手段】本発明の第1の特徴は、
テ−プ上に複数の半導体チップが縦横に並べて搭載され
前記テ−プの配線と該配線と対応する電極パッドと接続
するとともに前記テ−プの裏面に突出する複数の電極端
子を有する帯状構成部材の複数枚を準備し、この帯状構
成部材を上下に積み重ねて樹脂封止して形成される積層
樹脂封止部材を得る、前記積層樹脂封止部材の側面に対
し互いに隣接する前記テ−プの間に介在する樹脂部材を
回転するブレ−ドにより切り込みを入れるとともに一平
面上にある前記半導体チップの不活性面を削り取るよう
に前記ブレ−ドを水平方向に移動させ、前記積層樹脂封
止部材を一平面に並べられた複数の薄く削られた前記半
導体チップを含む単層樹脂封止部材に分離し、しかる
後、この単層樹脂封止部材を互いに隣接する前記半導体
チップ間の境界を切断手段により切断分離し個々の一つ
の前記半導体チップを含む樹脂封止部材に分離してなる
半導体装置である。
The first feature of the present invention is to:
A plurality of semiconductor chips are vertically and horizontally mounted on a tape and are connected to the tape wiring and electrode pads corresponding to the wiring, and have a plurality of electrode terminals protruding from the back surface of the tape. A plurality of members are prepared, and a laminated resin encapsulating member formed by stacking the strip-shaped constituent members vertically and encapsulating the resin to obtain a laminated resin encapsulating member. The resin member interposed between the blades is rotated by a blade, and the blade is moved in the horizontal direction so as to scrape off the inactive surface of the semiconductor chip on one plane, and the laminated resin is sealed. The member is separated into a single-layer resin sealing member including a plurality of thinly cut semiconductor chips arranged in one plane, and thereafter, the single-layer resin sealing member is divided into boundaries between the semiconductor chips adjacent to each other. Off Cut and separated by means of a semiconductor device obtained by separating a resin sealing member comprising individual one of said semiconductor chip.

【0009】また、本発明の第2の特徴は、テ−プに複
数の半導体チップが縦横に並べて搭載され前記テ−プの
配線と該配線と対応する電極パッドと接続するとともに
前記テ−プの裏面に突出する複数の電極端子を有しかつ
前記半導体チップの周囲の前記テ−プの裏面の配線から
突出する電気接続端子を有する複数枚の他の帯状構成部
材を準備し、この他の帯状構成部材を上下に積み重ねか
つ前記電気接続端子を下に位置する他の前記テ−プの配
線に接合させてから樹脂封止して形成される他の積層樹
脂封止部材を得る、この他の積層樹脂封止部材に垂直に
他のブレ−ドを切り込ませ前記テ−プ間に前記電気接続
端子を含むとともに前記半導体チップが縦方向に並べて
樹脂封止された個々の樹脂封止部材に切断分離してなる
スタック型の半導体装置である。
A second feature of the present invention is that a plurality of semiconductor chips are mounted vertically and horizontally on a tape and are connected to the wiring of the tape and an electrode pad corresponding to the wiring, and the tape is also connected to the tape. A plurality of other strip-shaped components having a plurality of electrode terminals projecting on the back surface of the tape and having electrical connection terminals projecting from the wiring on the back surface of the tape around the semiconductor chip. Another laminated resin sealing member formed by stacking the band-shaped components vertically and joining the electrical connection terminals to the wiring of the other tape located below and then resin-sealing the laminated resin sealing member Another resin encapsulation member in which another blade is vertically cut into the laminated resin encapsulation member and the electric connection terminals are provided between the tapes, and the semiconductor chips are vertically aligned and resin-encapsulated. Stacked semi-conductor made by cutting and separating It is a device.

【0010】さらに、本発明の第3の特徴は、テ−プに
複数の半導体チップが縦横に並べて搭載され前記テ−プ
の配線と該配線と対応する電極パッドと接続するととも
に前記テ−プの裏面に突出する複数の電極端子を有しか
つ前記半導体チップの周囲の前記テ−プの裏面および表
面の配線から突出する電気接続端子を有する複数枚の他
の帯状構成部材を準備し、この他の帯状構成部材を上下
に積み重ねて樹脂封止して形成される他の積層樹脂封止
部材を得る、前記他の積層樹脂封止部材の側面に対し互
いに隣接する前記テ−プの間に介在する前記電気接続端
子の間に回転するブレ−ドにより切り込みを入れるとと
もに一平面上にある前記半導体チップの不活性面を削り
取るように前記ブレ−ドを水平方向に移動させ、前記積
層樹脂封止部材を一平面に並べられた複数の薄く削られ
た前記半導体チップを含む他の単層樹脂封止部材に分離
し、前記単層樹脂封止部材を一つの前記半導体チップを
含む領域毎に分割してなる複数の半導体装置を上下に積
み重ねて組み立ててなるスタック型の半導体装置であ
る。
Further, a third feature of the present invention is that a plurality of semiconductor chips are mounted on a tape side by side vertically and horizontally, and are connected to the wiring of the tape and an electrode pad corresponding to the wiring, and the tape is also connected to the tape. A plurality of other strip-shaped component members having a plurality of electrode terminals protruding on the back surface of the tape and having electric connection terminals protruding from the wiring on the back surface and the surface of the tape around the semiconductor chip, Another laminated resin sealing member formed by stacking another strip-shaped component member vertically and resin-sealing is obtained. Between the tapes adjacent to each other with respect to the side surface of the other laminated resin sealing member. A notch is formed by a blade that rotates between the electric connection terminals that are interposed, and the blade is moved in a horizontal direction so as to scrape off the inactive surface of the semiconductor chip lying on a plane, and the laminated resin encapsulation is performed. Stop member It is divided into another single-layer resin sealing member including the plurality of thinly cut semiconductor chips arranged in a plane, and the single-layer resin sealing member is divided for each region including one semiconductor chip. It is a stack-type semiconductor device in which a plurality of semiconductor devices are vertically stacked and assembled.

【0011】また、前記第1の特徴、前記第2の特徴お
よび前記第3の特徴の半導体装置において、前記電極端
子が半田ボ−ルであっても良い。
Further, in the semiconductor device having the first characteristic, the second characteristic and the third characteristic, the electrode terminal may be a solder ball.

【0012】本発明の第4の特徴は、上型と下型との間
のキャビティに前記第1の特徴の半導体装置の帯状構成
部材または第2の特徴の半導体装置あるいは第3の特徴
の半導体装置における他の帯状構成部材の複数枚を上下
に積み重ねて収納し、溶融した樹脂を前記キャビティに
圧送しながら該キャビティを真空排気し、前記帯状構成
部材を樹脂封止する工程を含む第1の特徴または第2の
特徴あるいは第3の特徴における半導体装置の製造方法
である。
A fourth feature of the present invention is that the band-shaped component of the semiconductor device of the first feature, the semiconductor device of the second feature, or the semiconductor of the third feature is provided in the cavity between the upper mold and the lower mold. A first step including a step of accommodating a plurality of other strip-shaped component members in the apparatus by stacking them vertically and evacuating the cavity while pumping the melted resin into the cavity to seal the strip-shaped component member with resin; The method is a method for manufacturing a semiconductor device according to the feature, the second feature, or the third feature.

【0013】また、前記帯状構成部材あるいは前記他の
帯状構成部材と前記上型の内壁との間にリリ−スフィル
ムを挿入することが望ましい。さらに、前記キャビティ
に収納された前記帯状構成部材または前記他の帯状構成
部材から外方に伸びるそれぞれの前記テ−プの間隔を維
持する枠部材を挿入することが望ましい。
It is desirable that a release film is inserted between the strip-shaped component member or the other strip-shaped component member and the inner wall of the upper die. Further, it is desirable to insert a frame member that maintains the interval between the tapes extending outward from the strip-shaped component member or the other strip-shaped component member housed in the cavity.

【0014】[0014]

【発明の実施の形態】次に、本発明について図面を参照
して説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

【0015】図1(a)および(b)は本発明の一実施
の形態における樹脂封止前の帯状構成部材を説明するた
めの断面図である。この樹脂封止前の半導体チップ1が
フェ−スダウンでテ−プ2に搭載された状態の帯状構成
部材15aは、図1(a)に示すように、複数の半導体
チップ1を縦横に並べ搭載するテ−プ2と、テ−プの裏
面から突出する電極端子4とで構成されている。
1 (a) and 1 (b) are cross-sectional views for explaining a band-shaped component member before resin sealing in one embodiment of the present invention. As shown in FIG. 1A, the band-shaped component 15a in a state where the semiconductor chip 1 before resin sealing is mounted on the tape 2 by face-down mounting a plurality of semiconductor chips 1 arranged vertically and horizontally. The tape 2 and the electrode terminal 4 protruding from the back surface of the tape.

【0016】テ−プ2は、例えば、ポリイミドフィルム
など使用し、後述する樹脂封入時に溶融樹脂が侵入し易
いように、隣接する半導体チップ1間のテ−プ2に穴2
aを設けることが望ましい。また、テ−プ2の表面に形
成された配線であるインナ−リ−ドと半導体チップの電
極パッドと接続するか、または、半導体チップ1の下面
の電極パッドとテ−プ面の電極とをフリップチップボン
ディングし、テ−プ2の内部配線と接続しテ−プ2の裏
面から突出する電極端子4をもつBGA(Ball G
ri−d Array)構造にすることが望ましい。
The tape 2 is made of, for example, a polyimide film or the like, and a hole 2 is formed in the tape 2 between the adjacent semiconductor chips 1 so that the molten resin can easily enter when the resin is filled in as described later.
It is desirable to provide a. Further, the inner lead, which is a wiring formed on the surface of the tape 2, is connected to the electrode pad of the semiconductor chip, or the electrode pad on the lower surface of the semiconductor chip 1 and the electrode on the tape surface are connected. BGA (Ball G) having an electrode terminal 4 which is flip-chip bonded and connected to the internal wiring of the tape 2 and protrudes from the back surface of the tape 2.
It is desirable to have a rid-array structure.

【0017】一方、本発明の他の帯状構成部材15b
は、図1(b)に示すように、電極端子4の代わりに半
田ボ−ル3を取り付けた構造のものも使用できる。
On the other hand, another strip-shaped component 15b of the present invention.
As shown in FIG. 1 (b), a structure in which a solder ball 3 is attached instead of the electrode terminal 4 can also be used.

【0018】図2(a)および(b)は本発明の第1の
実施の形態における積み重ねた帯状構成部材を樹脂封止
する工程を説明するための図である。上述したように、
帯状構成部材15aの複数枚を積み重ねた状態で、図2
(a)に示すように、金型のキャビティ11に収納す
る。このとき、上型5のキャビティ11の内壁に離型材
であるとともに半導体チップ1の保護のためにリリ−ス
フィルム10を貼り付けることが望ましい。また、リリ
−スフィルム10の代わりに隙間をもたせても良い。さ
らに、一番下に位置する帯状構成部材15aは、電極端
子4が下型6のキャビティ11の内壁に載っている状態
である。
FIGS. 2 (a) and 2 (b) are views for explaining the step of resin-sealing the stacked band-shaped components in the first embodiment of the present invention. As mentioned above,
In the state where a plurality of strip-shaped component members 15a are stacked, FIG.
As shown in (a), it is stored in the cavity 11 of the mold. At this time, it is desirable to attach a release film 10 to the inner wall of the cavity 11 of the upper mold 5 as a release material for protecting the semiconductor chip 1. A gap may be provided instead of the release film 10. Further, the strip-shaped component member 15a located at the bottom is in a state where the electrode terminal 4 is placed on the inner wall of the cavity 11 of the lower mold 6.

【0019】一方、上型5と下型6が気密に閉じられる
ように、金型の合わせ面にOリング9が設けられてい
る。また、溶融樹脂で押し出されるキャビティ11内の
空気が排気され易いように、排気穴12が設けられ、こ
の排気穴12は、図示していない開閉バルブを介して真
空ポンプが連結されている。次に、図2(b)に示すよ
うに、上型5と下型で帯状構成部材のテ−プ2の末端を
挟み保持し金型を型締めするとともにプランジャ7が上
昇し、タブレット8が加熱され溶融樹脂9aとなりキャ
ビティ11内に注入される。
On the other hand, an O-ring 9 is provided on the mating surface of the mold so that the upper mold 5 and the lower mold 6 are airtightly closed. Further, an exhaust hole 12 is provided so that the air in the cavity 11 pushed out by the molten resin can be easily exhausted, and the exhaust hole 12 is connected to a vacuum pump through an opening / closing valve (not shown). Next, as shown in FIG. 2 (b), the upper mold 5 and the lower mold sandwich and hold the ends of the tape 2 of the band-shaped component to clamp the mold, and the plunger 7 rises and the tablet 8 It is heated and becomes molten resin 9a, which is injected into the cavity 11.

【0020】キャビティ11内に侵入した溶融樹脂は、
帯状構成部材15aの半導体チップ1を包み、周辺の隙
間に充填される。この溶融樹脂の充填に伴って溶融樹脂
からガスが発生する。そこで金型に取付けられた真空ポ
ンプ(図示せず)作動し、キャビティ11内に充満した
ガスは、排気穴12を介して金型外に排出される。この
真空排気により帯状構成部材15aの細部に留まるガス
が金型外に排出され、樹脂硬化後に気泡として残らな
い。所定時間経過すると、溶融樹脂が架橋し、架橋度が
進むつれて溶融樹脂が硬化する。
The molten resin that has entered the cavity 11 is
The semiconductor chip 1 of the belt-shaped component 15a is wrapped and filled in the peripheral gap. Gas is generated from the molten resin as the molten resin is filled. Then, a vacuum pump (not shown) attached to the mold is operated, and the gas filled in the cavity 11 is discharged to the outside of the mold through the exhaust hole 12. By this vacuum evacuation, the gas remaining in the details of the belt-shaped component 15a is discharged to the outside of the mold and does not remain as bubbles after the resin is cured. After a lapse of a predetermined time, the molten resin is crosslinked, and the molten resin is cured as the degree of crosslinking progresses.

【0021】図3(a)〜(c)は本発明の第1の実施
の形態における半導体装置の製作過程を説明する図であ
る。図2の金型から取り出された積層樹脂封止部材13
は、図3に示すように、複数の半導体チップ1が搭載さ
れた帯状構成部材15aの複数枚を樹脂封止された一体
化した樹脂体である積層樹脂封止部材13である。
FIGS. 3A to 3C are views for explaining the manufacturing process of the semiconductor device according to the first embodiment of the present invention. Laminated resin sealing member 13 taken out from the mold of FIG.
As shown in FIG. 3, is a laminated resin sealing member 13 which is an integrated resin body in which a plurality of strip-shaped component members 15a on which a plurality of semiconductor chips 1 are mounted are resin-sealed.

【0022】次に、円形状のブレ−ド14の外周部を枠
16で組み込まれた切断装置により積層樹脂封止部材1
3を水平方向に回転する内側に切断刃のあるブレ−ド1
4を移動させ切り離す。この切断装置は、ブレ−ド14
が内側にあり枠16を回転させることによりブレ−ド1
4の横振れはなく真直ぐ切断できることを特徴としてい
る。
Next, the outer peripheral portion of the circular blade 14 is cut by a cutting device incorporated in the frame 16 to form the laminated resin sealing member 1.
Blade 1 with cutting blade inside to rotate 3 horizontally
Move 4 and disconnect. This cutting device is a blade 14
Is inside and the blade 16 is rotated by rotating the frame 16.
It is characterized by being able to cut straight without horizontal runout of No. 4.

【0023】まず、この切断には、ブレ−ド14の内側
に積層樹脂封止部材13を入れ、切断装置のテ−ブルに
固定する。テ−ブルを移動させブレ−ド14の刃が積層
樹脂封止部材13の平坦な側面の樹脂部分に刃先を切り
込ませ、そして、図3(a)に示すように、ブレ−ド1
4を回転させながら紙面の下から上に向け水平方向に移
動させ、半導体チップ1の不活性面である裏面を削り取
る。このことにより積層樹脂封止部材13から一番下の
単層樹脂封止部材17が切り離される。このように、積
層樹脂封止部材13から順次複数の単層樹脂封止部材1
7に切断分離する。ただ、最も上にある半導体チップ1
をより薄くするために、半導体チップ1の厚みの半分以
上の部分にブレ−ド14の切り込みを入れて切断するこ
とが望ましい。
First, for this cutting, the laminated resin sealing member 13 is put inside the blade 14 and fixed to the table of the cutting device. The table is moved so that the blade of the blade 14 cuts the blade edge into the resin portion on the flat side surface of the laminated resin sealing member 13, and as shown in FIG.
While rotating 4 in the horizontal direction from the bottom to the top of the paper, the back surface which is the inactive surface of the semiconductor chip 1 is scraped off. As a result, the lowermost single-layer resin sealing member 17 is separated from the laminated resin sealing member 13. In this way, the single-layer resin sealing member 1 is sequentially stacked from the laminated resin sealing member 13.
Cut into 7 and separate. Just the top semiconductor chip 1
In order to make the thickness of the semiconductor chip 1 thinner, it is desirable to cut the blade 14 by cutting it into a portion that is half or more of the thickness of the semiconductor chip 1.

【0024】次に、図3(b)に示すように、単層樹脂
封止部材17の周囲の不要部材を切り取り、矩形状樹脂
体に仕上げ、一つ半導体チップを含む領域毎(点線で示
す)にブレ−ド18により切断し、図3(c)に示す半
導体装置を得る。なお、このブレ−ド18は、通常のダ
イシング装置のブレ−ドを使用しても良い。さらに、研
磨材が混入した高圧水を切断線に沿って噴射し切断する
ウォ−タ−ジェット切断装置を使用しても良い。
Next, as shown in FIG. 3B, unnecessary members around the single-layer resin sealing member 17 are cut off and finished into a rectangular resin body, and each region including one semiconductor chip (shown by a dotted line). ) And is cut by a blade 18 to obtain the semiconductor device shown in FIG. The blade 18 may be a blade of an ordinary dicing device. Further, it is possible to use a water jet cutting device that sprays and cuts high-pressure water mixed with an abrasive along a cutting line.

【0025】図4は図2の樹脂封止金型の変形例を示す
図である。この金型は、図4に示すように、帯状構成部
材15aの外側に伸びるテ−プ2が金型のキャビティ1
1内に入るように短く切り、テ−プ2間の間隔を維持す
るために中空状の枠部材19を設けている。金型に入れ
る前に、各テ−プ間に枠部材19を入れテ−プ2と枠部
材を仮接着し複数の帯状構成部材15aを積み重ねた組
立体にし金型に入れれば、金型に組み込みし易くなる。
また、溶融樹脂が流れ易いように、枠部材19の中穴は
強度の許す限り大きくしてある。このように枠部材19
を設けることにより、樹脂封止後に枠部材19の内側に
沿って切断してやれば、樹脂封止後の仕上げが簡単にな
るという利点がある。
FIG. 4 is a view showing a modified example of the resin sealing mold shown in FIG. In this mold, as shown in FIG. 4, a tape 2 extending outside the band-shaped component 15a has a cavity 1 of the mold.
A frame member 19 having a hollow shape is provided in order to keep the space between the tapes 2 short by cutting the tapes so that the tapes can fit inside 1. Before being put in the mold, a frame member 19 is inserted between the tapes and the tape 2 and the frame member are temporarily adhered to each other to form an assembly in which a plurality of strip-shaped constituent members 15a are stacked. Easy to incorporate.
Further, the inner hole of the frame member 19 is made as large as the strength allows so that the molten resin can easily flow. In this way, the frame member 19
By providing the above, there is an advantage that if the resin is sealed along the inner side of the frame member 19, the finish after the resin sealing becomes simple.

【0026】図5(a)および(b)は本発明の第2の
実施の形態における樹脂封止して形成される積層樹脂封
止部材から得られるスタック型の半導体装置を説明する
ための図である。まず、図1(a)の帯状構成部材15
aの複数枚のそれぞれの一個の半導体チップ1の周辺の
テ−プ2の配線パッドから下方に伸びる電気接続端子2
0を接合する。次に、これら帯状構成部材15aを積み
重ねるとき、テ−プ2から下方に伸びる電気接続端子2
0の他端を下側のテ−プ2の配線パッドに接続させる。
FIGS. 5A and 5B are views for explaining a stack type semiconductor device obtained from a laminated resin sealing member formed by resin sealing in the second embodiment of the present invention. Is. First, the strip-shaped component 15 of FIG.
a. Electrical connection terminals 2 extending downward from the wiring pads of the tape 2 around each semiconductor chip 1 of a.
Join 0. Next, when these strip-shaped components 15a are stacked, the electrical connection terminal 2 extending downward from the tape 2 is formed.
The other end of 0 is connected to the wiring pad of the lower tape 2.

【0027】次に、図2の金型を用いて積み重ねられた
複数枚の帯状構成部材を樹脂封止し、図5(a)に示す
積層樹脂封止部材13を得る。そして、複数の半導体チ
ップ1が縦方向に並ぶ領域毎に(点線で示す)にブレ−
ド18を切り込ませ、ブレ−ド18を回転させながら下
方に移動させ、図5(b)に示すスタック型の半導体装
置に切断分離する。
Next, a plurality of stacked belt-shaped components are resin-sealed using the mold of FIG. 2 to obtain a laminated resin sealing member 13 shown in FIG. 5 (a). Then, for each region where a plurality of semiconductor chips 1 are arranged in the vertical direction (shown by a dotted line)
The blade 18 is cut, and the blade 18 is rotated and moved downward to cut and separate the stack type semiconductor device shown in FIG. 5B.

【0028】図6(a)〜(e)は本発明の第3の実施
の形態における樹脂封止して形成される積層樹脂封止部
材から得られるスタック型の半導体装置を説明するため
の図である。図5に示すスタック型の半導体装置は、半
導体チップ1の厚みは樹脂封止したときの厚みをもって
いるので、あまり薄くない。
FIGS. 6A to 6E are views for explaining a stack type semiconductor device obtained from a laminated resin sealing member formed by resin sealing in the third embodiment of the present invention. Is. In the stack type semiconductor device shown in FIG. 5, the thickness of the semiconductor chip 1 is not so thin because it has the thickness when it is resin-sealed.

【0029】そこで、図1(a)の帯状構成部材15a
の半導体チップ1の周囲のテ−プ2の表裏にある配線パ
ッドに短い電気接続端子21を取り付ける。しかる後、
電気接続端子21が取付けられた帯状構成部材15aの
複数枚を積み重ねたものを準備し、図4に示す金型のキ
ャビティ11に収納する。このときの枠部材19を取付
け、各帯状構成部材15aの間隔が一定になるようにし
た。
Therefore, the strip-shaped component 15a shown in FIG.
The short electrical connection terminals 21 are attached to the wiring pads on the front and back of the tape 2 around the semiconductor chip 1. After that,
A stack of a plurality of strip-shaped constituent members 15a to which the electric connection terminals 21 are attached is prepared and housed in the cavity 11 of the mold shown in FIG. At this time, the frame member 19 was attached so that the intervals between the strip-shaped constituent members 15a were constant.

【0030】次に、金型に溶融樹脂を注入しながら真空
排気し、図6(a)に示す積層樹脂封止部材13aを得
る。次に、図3(a)で説明したように、積層樹脂封止
部材13aに樹脂封止されたテ−プ2の上下にある電気
接続端子21の間にブレ−ドを切り込み、冷却水を供給
し水平方向にブレ−ドを回転させながら移動させる。こ
のことにより、裏面が削り取られて薄くなった単層樹脂
部材17aが得られる。なお、図6(a)の最も下にあ
る樹脂層22は最初にブレ−ドで削り取る。最後に、最
も上にある樹脂層および半導体チップ1の裏面を削り取
る。
Next, the molten resin is injected into the mold and vacuum evacuation is performed to obtain the laminated resin sealing member 13a shown in FIG. 6 (a). Next, as described with reference to FIG. 3A, blades are cut between the electric connection terminals 21 above and below the tape 2 which is resin-sealed in the laminated resin sealing member 13a to cool the water. Supply and move while rotating the blade horizontally. As a result, the single-layer resin member 17a whose back surface is scraped off and which is thin is obtained. The resin layer 22 at the bottom of FIG. 6A is first shaved off with a blade. Finally, the uppermost resin layer and the back surface of the semiconductor chip 1 are scraped off.

【0031】次に、図6(c)に示すように、単層樹脂
封止部材17aの境界にブレ−ド18を切り込ませ、一
つの半導体チップ1を含む領域毎に分離分割する。図6
(d)に示すように、より薄い半導体装置が得られる。
そして、図6(e)に示すように、図6(d)の半導体
装置を多段に積み重ね、電気接続端子21どうしは半田
接続し、他の樹脂面は接着材で貼付けて、スタック型の
半導体装置を得る。
Next, as shown in FIG. 6C, the blade 18 is cut at the boundary of the single-layer resin sealing member 17a, and the region containing one semiconductor chip 1 is separated and divided. Figure 6
As shown in (d), a thinner semiconductor device is obtained.
Then, as shown in FIG. 6 (e), the semiconductor devices of FIG. 6 (d) are stacked in multiple stages, the electric connection terminals 21 are solder-connected, and the other resin surface is attached with an adhesive to form a stack type semiconductor. Get the device.

【0032】以上、帯状構成部材は図1(a)に示した
帯状構成部材15aを使用して説明したが、図1(b)
に示した半田ボ−ル3を電極端子として構成する帯状構
成部材15bも適用できる。
The strip-shaped component has been described above by using the strip-shaped component 15a shown in FIG. 1 (a).
The band-shaped component 15b having the solder ball 3 as shown in FIG.

【0033】[0033]

【発明の効果】以上説明したように本発明は、表面上に
縦横に並べて複数の半導体チップが搭載されるとともに
裏面から突出する複数の電極端子をもつテ−プで構成さ
れる帯状構成部材の複数枚を上下に多段に積み重ねて樹
脂封止し、樹脂封止されてブロック状に成形された積層
樹脂封止部材を、樹脂封止された個々の帯状構成部材に
切り離すために、一平面上に樹脂封止された複数の半導
体チップの不活性面を削り取るようにブレ−ドを切り込
ませ切断することによって、残留応力を発生させる研磨
を行うことなく半導体チップを短時間で薄くすることが
できしかも品質が向上するという効果がある。
As described above, according to the present invention, there is provided a strip-shaped member constituted by a tape having a plurality of semiconductor chips mounted vertically and horizontally on the front surface and having a plurality of electrode terminals protruding from the back surface. Stacking multiple sheets vertically in multiple stages and sealing them with resin, and separating the resin-sealed block-shaped laminated resin sealing members into individual resin-sealed strip-shaped components It is possible to thin the semiconductor chip in a short time without polishing to generate residual stress by cutting and cutting the blade so as to scrape the inactive surface of the plurality of semiconductor chips sealed with the resin. This is possible and has the effect of improving the quality.

【0034】また、切断分離された一平面上に樹脂封止
された複数の半導体チップ複数をもつ樹脂封止部材を、
一つの半導体チップを含む領域毎に切断分離して複数の
半導体装置が得られるので、一度の樹脂封止で多くの半
導体装置が得られ生産性が向上するという効果がある。
Further, a resin sealing member having a plurality of semiconductor chips which are resin-sealed on one plane which is cut and separated,
Since a plurality of semiconductor devices can be obtained by cutting and separating for each region including one semiconductor chip, a large number of semiconductor devices can be obtained by one resin encapsulation and the productivity is improved.

【0035】さらに、薄い半導体装置を多段に積み重ね
て組立ることによって、高密度の小型のスタック型の半
導体装置が得られ、ト−タルコストの低廉化が図れると
いう効果がある。
Furthermore, by stacking and assembling thin semiconductor devices in multiple stages, a high-density and small-sized stack type semiconductor device can be obtained, and the total cost can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施の形態における樹脂封止前の帯
状構成部材を説明するための断面図である。
FIG. 1 is a cross-sectional view for explaining a belt-shaped component member before resin sealing according to an embodiment of the present invention.

【図2】本発明の第1の実施の形態における積み重ねた
帯状構成部材を樹脂封止する工程を説明するための図で
ある。
FIG. 2 is a diagram for explaining a step of resin-sealing the stacked band-shaped component members according to the first embodiment of the present invention.

【図3】本発明の第1の実施の形態における半導体装置
の製作過程を説明する図である。
FIG. 3 is a diagram illustrating a manufacturing process of the semiconductor device according to the first embodiment of the invention.

【図4】図2の樹脂封止金型の変形例を示す図である。FIG. 4 is a diagram showing a modified example of the resin sealing mold of FIG.

【図5】本発明の第2の実施の形態における樹脂封止し
て形成される積層樹脂封止部材から得られるスタック型
の半導体装置を説明するための図である。
FIG. 5 is a diagram for explaining a stack type semiconductor device obtained from a laminated resin sealing member formed by resin sealing according to a second embodiment of the present invention.

【図6】本発明の第3の実施の形態における樹脂封止し
て形成される積層樹脂封止部材から得られるスタック型
の半導体装置を説明するための図である。
FIG. 6 is a diagram for explaining a stack type semiconductor device obtained from a laminated resin sealing member formed by resin sealing according to a third embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 テ−プ 3 半田ボ−ル 4 電極端子 5 上型 6 下型 7 プランジャ 8 タブレット 9 Oリング 10 リリ−スフィルム 11 キャビティ 12 排気穴 13,13a 積層樹脂封止部材 15a,15b 帯状構成部材 17 単層樹脂封止部材 18 ブレ−ド 19 枠部材 1 semiconductor chip 2 tapes 3 solder balls 4 electrode terminals 5 Upper mold 6 Lower mold 7 Plunger 8 tablets 9 O-ring 10 Release film 11 cavities 12 exhaust holes 13,13a Laminated resin sealing member 15a, 15b band-shaped components 17 Single layer resin sealing member 18 blades 19 Frame member

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 テ−プ上に複数の半導体チップが縦横に
並べて搭載され前記テ−プの配線と該配線と対応する電
極パッドと接続するとともに前記テ−プの裏面に突出す
る複数の電極端子を有する帯状構成部材の複数枚を準備
し、この帯状構成部材を上下に積み重ねて樹脂封止して
形成される積層樹脂封止部材を得る、前記積層樹脂封止
部材の側面に対し互いに隣接する前記テ−プの間に介在
する樹脂部材を回転するブレ−ドにより切り込みを入れ
るとともに一平面上にある前記半導体チップの不活性面
を削り取るように前記ブレ−ドを水平方向に移動させ、
前記積層樹脂封止部材を一平面に並べられた複数の薄く
削られた前記半導体チップを含む単層樹脂封止部材に分
離し、しかる後、この単層樹脂封止部材を互いに隣接す
る前記半導体チップ間の境界を切断手段により切断分離
し個々の一つの前記半導体チップを含む樹脂封止部材に
分離してなることを特徴とする半導体装置。
1. A plurality of semiconductor chips mounted vertically and horizontally on a tape, connected to wirings of the tape and electrode pads corresponding to the wirings, and a plurality of electrodes protruding to the back surface of the tape. A plurality of strip-shaped constituent members having terminals are prepared, and a laminated resin sealing member formed by vertically stacking the strip-shaped constituent members to obtain a laminated resin sealing member, which are adjacent to each other with respect to the side surface of the laminated resin sealing member. The resin member interposed between the tapes is cut by a blade that rotates, and the blade is moved horizontally so as to scrape off the inactive surface of the semiconductor chip on one plane,
The laminated resin encapsulation member is separated into a single-layer resin encapsulation member including a plurality of thinly cut semiconductor chips arranged in one plane, and then the single-layer resin encapsulation members are adjacent to each other in the semiconductor. A semiconductor device, characterized in that a boundary between chips is cut and separated by a cutting means and separated into a resin sealing member including each one of the semiconductor chips.
【請求項2】 テ−プに複数の半導体チップが縦横に並
べて搭載され前記テ−プの配線と該配線と対応する電極
パッドと接続するとともに前記テ−プの裏面に突出する
複数の電極端子を有しかつ前記半導体チップの周囲の前
記テ−プの裏面の配線から突出する電気接続端子を有す
る複数枚の他の帯状構成部材を準備し、この他の帯状構
成部材を上下に積み重ねかつ前記電気接続端子を下に位
置する他の前記テ−プの配線に接合させてから樹脂封止
して形成される他の積層樹脂封止部材を得る、この他の
積層樹脂封止部材に垂直に他のブレ−ドを切り込ませ前
記テ−プ間に前記電気接続端子を含むとともに前記半導
体チップが縦方向に並べて樹脂封止された個々の樹脂封
止部材に切断分離してなることを特徴とするスタック型
の半導体装置。
2. A plurality of semiconductor chips are vertically and horizontally mounted on a tape and are connected to wirings of the tape and electrode pads corresponding to the wirings, and a plurality of electrode terminals projecting from the back surface of the tape. And a plurality of other strip-shaped components having electrical connection terminals projecting from the wiring on the back surface of the tape around the semiconductor chip are prepared, and the other strip-shaped components are stacked vertically and Another laminated resin sealing member is obtained by joining the electric connection terminal to the wiring of the other tape located below and resin-sealing the same, and is perpendicular to the other laminated resin sealing member. Another blade is cut, the electric connection terminals are provided between the tapes, and the semiconductor chips are arranged in a vertical direction and cut into individual resin-sealed members which are resin-sealed. Stack type semiconductor device.
【請求項3】 テ−プに複数の半導体チップが縦横に並
べて搭載され前記テ−プの配線と該配線と対応する電極
パッドと接続するとともに前記テ−プの裏面に突出する
複数の電極端子を有しかつ前記半導体チップの周囲の前
記テ−プの裏面および表面の配線から突出する電気接続
端子を有する複数枚の他の帯状構成部材を準備し、この
他の帯状構成部材を上下に積み重ねて樹脂封止して形成
される他の積層樹脂封止部材を得る、前記他の積層樹脂
封止部材の側面に対し互いに隣接する前記テ−プの間に
介在する前記電気接続端子の間に回転するブレ−ドによ
り切り込みを入れるとともに一平面上にある前記半導体
チップの不活性面を削り取るように前記ブレ−ドを水平
方向に移動させ、前記積層樹脂封止部材を一平面に並べ
られた複数の薄く削られた前記半導体チップを含む他の
単層樹脂封止部材に分離し、前記単層樹脂封止部材を一
つの前記半導体チップを含む領域毎に分割してなる複数
の半導体装置を上下に積み重ねて組み立ててなることを
特徴とするスタック型の半導体装置。
3. A plurality of semiconductor chips mounted vertically and horizontally on a tape, connected to wirings of the tape and electrode pads corresponding to the wirings, and a plurality of electrode terminals protruding to the back surface of the tape. And a plurality of other strip-shaped components having electrical connection terminals protruding from the back and front wirings of the tape around the semiconductor chip are prepared, and the other strip-shaped components are stacked vertically. To obtain another laminated resin sealing member formed by resin sealing between the electric connection terminals interposed between the tapes adjacent to each other on the side surface of the other laminated resin sealing member. The blade was moved in the horizontal direction so as to make a cut by the rotating blade and scrape off the inactive surface of the semiconductor chip on one plane, and the laminated resin sealing member was arranged on one plane. Multiple thin cuts Separated into another single-layer resin sealing member including the semiconductor chip, the plurality of semiconductor devices formed by dividing the single-layer resin sealing member into each region including one semiconductor chip are stacked vertically. A stack type semiconductor device characterized by being assembled.
【請求項4】 前記電極端子が半田ボ−ルであることを
特徴とする請求項1、請求項2または請求項3記載の半
導体装置。
4. The semiconductor device according to claim 1, wherein the electrode terminal is a solder ball.
【請求項5】 上型と下型との間のキャビティに請求項
1記載の帯状構成部材または請求項2あるいは請求項3
記載の他の帯状構成部材の複数枚を上下に積み重ねて収
納し、溶融した樹脂を前記キャビティに圧送しながら該
キャビティを真空排気し、前記帯状構成部材を樹脂封止
する工程を含むことを特徴とする請求項1、請求項2ま
たは請求項3記載の半導体装置の製造方法。
5. The strip-shaped component according to claim 1, or claim 2 or claim 3 in a cavity between the upper mold and the lower mold.
A plurality of other strip-shaped components described above are stacked and housed vertically, and the cavity is evacuated while the molten resin is pumped into the cavity, and the strip-shaped component is sealed with resin. The method for manufacturing a semiconductor device according to claim 1, claim 2, or claim 3.
【請求項6】 前記帯状構成部材あるいは前記他の帯状
構成部材と前記上型の内壁との間にリリ−スフィルムを
挿入することを特徴とする請求項5記載の半導体装置の
製造方法。
6. A method of manufacturing a semiconductor device according to claim 5, wherein a release film is inserted between the strip-shaped component member or the other strip-shaped component member and the inner wall of the upper die.
【請求項7】 前記キャビティに収納された前記帯状構
成部材または前記他の帯状構成部材から外方に伸びるそ
れぞれの前記テ−プの間隔を維持する枠部材を挿入する
ことを特徴とする請求項5または請求項6記載の半導体
装置の製造方法。
7. A frame member for maintaining an interval between the tapes extending outward from the strip-shaped component member or the other strip-shaped component member housed in the cavity is inserted. 5. The method for manufacturing a semiconductor device according to claim 5 or claim 6.
JP2002070682A 2002-03-14 2002-03-14 Semiconductor manufacturing system and its manufacturing method Pending JP2003273316A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
JP2003273316A true JP2003273316A (en) 2003-09-26

Family

ID=29201184

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340451A (en) * 2004-05-26 2005-12-08 Seiko Epson Corp Semiconductor device, its manufacturing method, circuit board, and electronic apparatus
WO2014083973A1 (en) * 2012-11-27 2014-06-05 日東電工株式会社 Semiconductor-device manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340451A (en) * 2004-05-26 2005-12-08 Seiko Epson Corp Semiconductor device, its manufacturing method, circuit board, and electronic apparatus
JP4561969B2 (en) * 2004-05-26 2010-10-13 セイコーエプソン株式会社 Semiconductor device
WO2014083973A1 (en) * 2012-11-27 2014-06-05 日東電工株式会社 Semiconductor-device manufacturing method

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