JP2014099430A5 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- JP2014099430A5 JP2014099430A5 JP2012244908A JP2012244908A JP2014099430A5 JP 2014099430 A5 JP2014099430 A5 JP 2014099430A5 JP 2012244908 A JP2012244908 A JP 2012244908A JP 2012244908 A JP2012244908 A JP 2012244908A JP 2014099430 A5 JP2014099430 A5 JP 2014099430A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- layer
- semiconductor layer
- oxide semiconductor
- multilayer film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 5
- 229910052738 indium Inorganic materials 0.000 claims 5
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N Hafnium Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052735 hafnium Chemical group 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010703 silicon Chemical group 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Chemical group 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Claims (4)
前記多層膜上のゲート絶縁膜と、
前記ゲート電極上のゲート電極と、を有し、
前記多層膜の端部は曲率を有し、
前記酸化物層のエネルギーギャップは、前記酸化物半導体層のエネルギーギャップよりも大きく、
前記酸化物半導体層中のインジウムの割合は、前記酸化物層中のインジウムの割合よりも高いことを特徴とする半導体装置。 A multilayer film including an oxide semiconductor layer and an oxide layer surrounding the oxide semiconductor layer;
A gate insulating film on the multilayer film;
A gate electrode on the gate electrode,
The end of the multilayer film has a curvature,
The energy gap of the oxide layer is larger than the energy gap of the oxide semiconductor layer,
A ratio of indium in the oxide semiconductor layer is higher than a ratio of indium in the oxide layer.
前記多層膜上のゲート絶縁膜と、
前記ゲート電極上のゲート電極と、を有し、
前記多層膜の端部は曲率を有し、
前記酸化物層のエネルギーギャップは、前記酸化物半導体層のエネルギーギャップよりも大きく、
前記酸化物層および前記酸化物半導体層は、インジウム、亜鉛および元素Ｍを含み、
前記酸化物半導体層中のインジウムの割合は、前記酸化物層中のインジウムの割合よりも高く、
前記元素Ｍは、アルミニウム、チタン、シリコン、ガリウム、ゲルマニウム、イットリウム、ジルコニウム、スズ、ランタン、セリウムまたはハフニウムであり、
前記酸化物層中の元素Ｍの割合は、前記酸化物半導体層中の元素Ｍの割合よりも高いことを特徴とする半導体装置。 A multilayer film including an oxide semiconductor layer and an oxide layer surrounding the oxide semiconductor layer;
A gate insulating film on the multilayer film;
A gate electrode on the gate electrode,
The end of the multilayer film has a curvature,
The energy gap of the oxide layer is larger than the energy gap of the oxide semiconductor layer,
The oxide layer and the oxide semiconductor layer include indium, zinc, and an element M,
The proportion of indium in the oxide semiconductor layer is higher than the proportion of indium in the oxide layer,
The element M is aluminum, titanium, silicon, gallium, germanium, yttrium, zirconium, tin, lanthanum, cerium or hafnium,
The ratio of the element M in the said oxide layer is higher than the ratio of the element M in the said oxide semiconductor layer, The semiconductor device characterized by the above-mentioned.
前記酸化物半導体層と前記酸化物層の界面と、前記酸化物層の側面と、の間隔は、
前記酸化物半導体層と前記酸化物層の界面と、前記酸化物層の上面と、の間隔よりも広いことを特徴とする半導体装置。 In claim 1 or claim 2,
The distance between the interface between the oxide semiconductor layer and the oxide layer and the side surface of the oxide layer is:
A semiconductor device characterized by being wider than a distance between an interface between the oxide semiconductor layer and the oxide layer and an upper surface of the oxide layer.
前記多層膜の膜厚は、前記多層膜の側面の曲率半径の５０分の１以上５０倍以下であることを特徴とする半導体装置。 In any one of Claim 1 thru | or 3,
The thickness of the multilayer film is 1/50 to 50 times the radius of curvature of the side surface of the multilayer film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012244908A JP6033045B2 (en) | 2012-10-17 | 2012-11-06 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012230359 | 2012-10-17 | ||
| JP2012230359 | 2012-10-17 | ||
| JP2012244908A JP6033045B2 (en) | 2012-10-17 | 2012-11-06 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016208555A Division JP6211665B2 (en) | 2012-10-17 | 2016-10-25 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014099430A JP2014099430A (en) | 2014-05-29 |
| JP2014099430A5 true JP2014099430A5 (en) | 2015-10-15 |
| JP6033045B2 JP6033045B2 (en) | 2016-11-30 |
Family
ID=50941228
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012244908A Expired - Fee Related JP6033045B2 (en) | 2012-10-17 | 2012-11-06 | Semiconductor device |
| JP2016208555A Expired - Fee Related JP6211665B2 (en) | 2012-10-17 | 2016-10-25 | Semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016208555A Expired - Fee Related JP6211665B2 (en) | 2012-10-17 | 2016-10-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP6033045B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160114511A (en) * | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
| US9837547B2 (en) * | 2015-05-22 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide conductor and display device including the semiconductor device |
| JP2017005064A (en) * | 2015-06-08 | 2017-01-05 | 株式会社半導体エネルギー研究所 | Semiconductor device, and display device having the same |
| JP2019220530A (en) * | 2018-06-18 | 2019-12-26 | 株式会社ジャパンディスプレイ | Semiconductor device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8420456B2 (en) * | 2007-06-12 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing for thin film transistor |
| JP2009032794A (en) * | 2007-07-25 | 2009-02-12 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JP4555358B2 (en) * | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | Thin film field effect transistor and display device |
| JP5430248B2 (en) * | 2008-06-24 | 2014-02-26 | 富士フイルム株式会社 | Thin film field effect transistor and display device |
| JP5345456B2 (en) * | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | Thin film field effect transistor |
| JP5328414B2 (en) * | 2009-02-25 | 2013-10-30 | 富士フイルム株式会社 | Top gate type field effect transistor, method of manufacturing the same, and display device including the same |
| JP5497417B2 (en) * | 2009-12-10 | 2014-05-21 | 富士フイルム株式会社 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND APPARATUS HAVING THE THIN FILM TRANSISTOR |
| CN102834922B (en) * | 2010-04-02 | 2016-04-13 | 株式会社半导体能源研究所 | Semiconductor device |
| JP5606787B2 (en) * | 2010-05-18 | 2014-10-15 | 富士フイルム株式会社 | Thin film transistor manufacturing method, thin film transistor, image sensor, X-ray sensor, and X-ray digital imaging apparatus |
| TWI654764B (en) * | 2010-11-11 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | Semiconductor device and method of manufacturing same |
| CN105336791B (en) * | 2010-12-03 | 2018-10-26 | 株式会社半导体能源研究所 | Oxide semiconductor film and semiconductor device |
-
2012
- 2012-11-06 JP JP2012244908A patent/JP6033045B2/en not_active Expired - Fee Related
-
2016
- 2016-10-25 JP JP2016208555A patent/JP6211665B2/en not_active Expired - Fee Related
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