JP2014093331A - Deposition method of polymerized film, environment maintenance method of deposition device, deposition device and manufacturing method of electronic product - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a deposition method of a polymerized film with which a polymerized film is not deposited in a place which is not desired to deposit the polymerized film, and the polymerized film can be selectively deposited only in a place desired to deposit the polymerized film.SOLUTION: A deposition method of a polymerized film includes the steps of: supplying deposition suppression treatment gas containing a deposition inhibitor into a deposition suppression region where it is not desired to deposit a polymerized film, in an object to be treated, and applying deposition suppression treatment for suppressing the deposition of the polymerized film to the deposition suppression region (step 2); and supplying gas containing a first monomer and gas containing a second monomer different from the first monomer to the object to be treated to which the deposition suppression treatment has been applied, causing polymerization reaction in the first monomer and the second monomer, and selectively depositing the polymerized film on a selected region on the object to be treated (step 3).

Description

  The present invention relates to a method for forming a polymer film, a method for maintaining an environment for a film forming apparatus, a film forming apparatus, and a method for manufacturing an electronic product.

  A polymer film, for example, a polymer thin film typified by a polyimide thin film has been studied for use as an interlayer insulating film in a semiconductor integrated circuit device or a liquid crystal alignment film in a flat panel display, for example, a liquid crystal display device.

  The polymer thin film is prepared by dissolving a raw material monomer in a solvent, spin-coating it onto a semiconductor wafer and polymerizing it, or vaporizing the raw material monomer dissolved in the solvent, and vaporizing the raw material monomer on the surface of the object to be treated. The film is formed using a vapor deposition polymerization method (for example, Patent Document 1) in which vapor deposition is performed and a polymerization reaction proceeds on the surface of the object to be processed.

  Among these, since the vapor deposition polymerization method is a dry process, the monomer can enter a fine portion which cannot be included in the wet process, and has an advantage that the film forming property is good. For this reason, polymer thin films formed by vapor deposition polymerization are attracting attention as one of the promising candidates for sidewall insulating films formed on the sidewalls of vias and trenches that are deep and have a high aspect ratio. ing.

  Vias and trenches that are deep and have a high aspect ratio are, for example, upper and lower integrated circuits in a three-dimensional semiconductor integrated circuit device that uses so-called three-dimensional LSI integration technology in which chips and / or wafers are stacked in the height direction. This can be seen in the vertical wiring structure that electrically connects the two.

JP 2010-62480 A

  The vapor deposition polymerization method has an advantage that it is excellent in film formability, and a polymer film, for example, a polymer thin film can be formed on a fine part.

  However, since the vapor deposition polymerization method is excellent in film formability, a slight gap is formed on the inner wall of the processing chamber of the film forming apparatus, on the inner wall of the processing space, on the surface of various parts existing inside the processing chamber, and between the parts. In addition, there is a situation that the film formation of the polymer thin film is easy to proceed. The polymer thin film formed in a slight gap on the inner wall on the processing space side or on the surfaces of various parts can cause generation of particles or the like in the processing chamber.

  The present invention provides a method for forming a polymerized film, which can selectively form a polymerized film only in a place where it is desired to form a film without forming a film where it is not desired to form a film. The present invention provides a method for maintaining an environment of a film forming apparatus, a film forming apparatus capable of performing the environment maintaining method, and a method for manufacturing an electronic product using the film forming method.

  A method for forming a polymer film according to a first aspect of the present invention is a method for forming a polymer film on a target object, wherein (1) the polymerization of the target object is performed. A film formation suppression process for supplying a film formation suppression treatment gas containing a film formation inhibitor to a film formation suppression area where it is not desired to form a film, and suppressing the formation of the polymer film to the film formation suppression area And (2) supplying a gas containing a first monomer and a gas containing a second monomer different from the first monomer to the object subjected to the film formation suppression process. And a step of polymerizing the first monomer and the second monomer to selectively form the polymer film on a selected region on the object to be processed.

  According to a second aspect of the present invention, there is provided a method for maintaining an environment of a film forming apparatus, comprising: a processing chamber for storing a target object; and performing a film forming process for a polymerized film on the stored target object; In addition, a polymer film source gas supply mechanism for supplying a gas containing a first monomer and a gas containing a second monomer different from the first monomer, and a film containing a film formation inhibitor in the processing chamber A film-forming suppression process gas supply mechanism for supplying a suppression process gas, and a method for maintaining an environment of a film formation apparatus for forming a polymer film, wherein the first treatment is performed on the target object in the process chamber. Before performing the film formation process of the polymer film that causes a polymerization reaction between the monomer and the second monomer, the film formation suppression process gas is supplied from the film formation suppression process gas supply mechanism into the process chamber, and at least the process In front of the exposed part on the processing space side of the room, Suppressing deposition suppression processing the deposition of the polymer film is subjected.

  A film forming apparatus according to a third aspect of the present invention contains a processing object, a processing chamber for performing a film forming process of a polymerized film on the stored processing object, and a first chamber in the processing chamber. A polymerization film raw material gas supply mechanism for supplying a gas containing a monomer and a gas containing a second monomer different from the first monomer, and a film formation suppressing treatment gas containing a film formation inhibitor in the processing chamber A film formation apparatus for forming a polymer film having a film formation suppression processing gas supply mechanism to be supplied, wherein the environmental maintenance method of the film formation apparatus according to the second aspect is implemented.

  An electronic product manufacturing method according to a fourth aspect of the present invention is an electronic product manufacturing method including a step of forming a polymer film on an object to be processed, and (1) of the object to be processed, A film formation suppression process gas containing a film formation inhibitor is supplied to a film formation suppression area where the polymer film is not desired to be formed, and the film formation of the polymerization film is suppressed with respect to the film formation suppression area. A step of performing a suppression process; and (2) a gas including a first monomer and a gas including a second monomer different from the first monomer in the target object subjected to the film formation suppression process. And the step of polymerizing the first monomer and the second monomer to selectively form the polymerized film on a selected region on the object to be processed.

  According to the present invention, a method for forming a polymerized film capable of selectively forming a polymerized film only where it is desired to form a film without forming a film where it is not desired to form a film, and the film formation thereof It is possible to provide a method for maintaining an environment of a film forming apparatus using the method, a film forming apparatus capable of performing the environment maintaining method, and a method for manufacturing an electronic product using the film forming method.

Photo substitute for drawing showing the state of film formation on the workpiece without pretreatment Photo in place of a drawing showing the state of polymerized film formation on the object to be processed when pretreated with ADP gas Photo substitute for drawing showing the film formation state of polymer film on the object to be processed when pre-treated with HMDS gas Photo substitute for drawing showing the state of film formation of the polymer film on the object to be processed when pre-treated with TMSDMA gas FIG. 2 is a cross-sectional view schematically showing a process for forming a polyimide thin film by vapor deposition polymerization, where FIG. (A) shows no pretreatment and FIG. (B) shows a case where pretreatment by TMSDMA is performed. 1 is a flowchart schematically showing an example of a method for forming a polymer film according to the first embodiment of the present invention. FIGS. 1A to 1C are cross-sectional views schematically showing main steps of an example of a method for forming a polymerized film according to the first embodiment. Sectional drawing which shows roughly an example of the back surface processing apparatus suitable for the film-forming method of the polymeric film which concerns on 1st Embodiment of this invention (A) The figure is a top view which shows the to-be-processed object on the boat used for a vertical batch type film-forming apparatus, (B) A figure is sectional drawing which follows the 6B-6B line in (A) figure. Flow chart schematically showing an example of a method for forming a polymer film according to the second embodiment of the present invention FIGS. 4A to 4C are cross-sectional views schematically showing main steps of an example of a method for forming a polymerized film according to the second embodiment. Sectional drawing which shows roughly an example of the front-and-back processing apparatus suitable for the film-forming method of the polymeric film which concerns on 2nd Embodiment of this invention Sectional drawing which shows roughly an example of the film-forming apparatus which concerns on 3rd Embodiment of this invention Sectional drawing which shows the state which is performing the film-forming suppression process with respect to the film-forming apparatus shown in FIG. (A) to (O) are diagrams showing examples of materials that can be used as a film formation inhibitor that suppresses the formation of a polymer film.

  Prior to the description of the embodiments, new knowledge obtained by the inventors of the present application will be described.

  The inventors of the present application use hexamethyldisilazane (HMDS) gas or trimethylsilyldimethylamine (TMSDMA) gas on the surface of the object before forming a polymer film on the object by vapor deposition polymerization. In other words, it has been found that when the pretreatment is performed, the formation of the polymer film on the surface of the object to be processed is suppressed, or the polymer film is not formed on the surface of the object to be processed.

  1A to 1D are photographs, which substitute for a drawing, showing a film formation state of a polymer film on an object to be processed.

<Deposition conditions for vapor deposition polymerization>
The results shown in FIG. 1A to FIG. 1D show the case where a polyimide thin film is formed as a polymer film on a silicon wafer using the vapor deposition polymerization method. As raw materials for the polyimide thin film, pyromellitic dianhydride (PMDA: C ₁₀ H ₂ O ₆ ) is used as monomer A, and 4,4′-oxydianiline (ODA: C ₁₂ H ₁₂ N ₂ O) is used as monomer B. These were dissolved in separate solvents, and the vaporized materials were premixed before being supplied into the processing chamber of the film forming apparatus. An example of the conditions for forming the polyimide thin film is as follows.
PMDA flow rate: 50sccm
ODA flow rate: 50sccm
Deposition pressure: 26.6 Pa (0.2 Torr: In this specification, 1 Torr is 133 Pa)
Deposition temperature: 200 ° C
Deposition time: 8 min
Cure temperature: 200 ℃
Cure time: 30min

<No pretreatment>
First, as shown in FIG. 1A, when the pretreatment is not performed, a polyimide thin film is formed in a film shape on the silicon wafer by performing a film forming process under the above processing conditions.

<Pretreatment with organosilane gas containing epoxy group>
Next, as shown in FIG. 1B, when pretreatment is performed under the following treatment conditions using organosilane gas, for example, 3-glycidoxypropyltrimethoxysilane (ADP) gas containing an epoxy group, as pretreatment. A polyimide thin film is formed on the silicon wafer in the same manner as when no pretreatment is performed. An ADP gas containing an epoxy group is also known as a silane coupling agent for improving adhesion between an inorganic material base (for example, silicon or silicon oxide film) and an organic material film (for example, polyimide film). Gas.
Processing pressure: 600 to 760 Pa (4.5 to 5.7 Torr)
Processing temperature: 100-150 ° C
Processing time: 5-10min

<Pre-treatment with organosilazane gas containing methyl group>
Next, as shown in FIG. 1C, an organosilazane gas, for example, hexamethyldisilazane (HMDS) gas containing a methyl group, is used as a pretreatment. The polyimide thin film is formed in an island shape instead of a film shape.
Processing pressure: 1330 to 13300 Pa (10 to 100 Torr)
Processing temperature: 50-200 ° C
Processing time: 1-10min
This can be considered that the film formation of the polyimide thin film was suppressed by forming the film by the organosilazane gas containing a methyl group on the surface of a silicon wafer.

<Pretreatment with amine-based silane gas containing methyl group>
Next, as shown in FIG. 1D, when an amine-based silane gas, for example, a trimethylsilyldimethylamine (TMSDMA) gas containing a methyl group is used and pretreated under the following conditions, a polyimide thin film is formed on the silicon wafer. No film is formed.
Processing pressure: 1330 to 13300 Pa (10 to 100 Torr)
Processing temperature: 50-200 ° C
Processing time: 1-10min
It can also be considered that the film formation of the polyimide thin film is suppressed by forming a film with an amine-based silane gas containing a methyl group on the surface of the silicon wafer.

<Consideration of deposition process>
2A and 2B are cross-sectional views schematically showing a process for forming a polyimide thin film by vapor deposition polymerization. FIG. 2A shows a case without pretreatment, and FIG. 2B shows a case with pretreatment by TMSDMA.

  In the vapor deposition polymerization method, the monomer B or the monomer A stays on the surface of the object to be processed and the monomer B or the monomer A comes into contact with the monomer B or the monomer A to form a polymer film on the surface of the object to be processed. To go.

  As shown in FIG. 2A, when the surface of the silicon wafer W is not pretreated, it is estimated that the surface of the silicon wafer W is in an environment where the monomer A or the monomer B can stay for a long time. For this reason, the probability that the monomer A and the monomer B meet on the surface of the silicon wafer W is increased, the polymerization reaction of the monomer A and the monomer B occurs on the surface of the silicon wafer W, and the monomer A and the monomer B are A polymerized film, for example, a polyimide thin film PI is formed by the polymerization reaction. Even when pretreatment is performed using an organosilane gas containing an epoxy group, a polymerized film is formed in the same manner.

  On the other hand, as shown in FIG. 2B, when the surface of the silicon wafer W is pretreated using, for example, an amine-based silane gas containing a methyl group, a film formation suppressing film 1 is formed on the surface of the silicon wafer W. . It is presumed that at least one of the monomer A and the monomer B cannot stay for a long time or cannot stay on the surface of the film formation suppressing film 1. When the environment of the surface of the silicon wafer W is changed in this way, the probability that the monomer A and the monomer B meet on the surface of the silicon wafer W is lowered. Thereby, it is considered that a polymerized film, for example, a polyimide thin film is difficult to be formed on the surface of the silicon wafer W or is not formed. Even when pretreatment is performed using an organosilazane gas containing a methyl group, a similar film formation suppression phenomenon occurs.

  Based on such knowledge, the inventors of the present application do not form a polymer film in a region where a polymer film is not desired to be deposited, but selectively forms a polymer film only in a region where a polymer film is desired to be deposited. A method for forming a polymerized film that can be performed has been completed.

  Several embodiments of the present invention will be described below with reference to the drawings. Note that common parts are denoted by common reference numerals throughout the drawings.

(First embodiment)
[Method of forming polymerized film]
The vapor deposition polymerization method is a dry process, and can supply the raw material monomer to a fine region, so that the film forming property is superior to the wet process. From this point of view, a polymer film formed using a vapor deposition polymerization method, for example, a polyimide thin film, is a material of a sidewall insulating film formed on a sidewall of a via or a trench having a high aspect ratio, for example, in a semiconductor integrated circuit device. Has become one of the leading candidates.

  However, in the manufacturing process of a semiconductor integrated circuit device, a polymer film such as a polyimide thin film is a material that is often avoided. This is because when a polymer wafer is deposited on the back surface or a semiconductor wafer on which a film is formed is carried into a processing chamber of a semiconductor manufacturing apparatus, for example, when the polymer film is an organic material, This is because there is a possibility of contamination with organic matter. Further, when such a semiconductor wafer is heated by being placed on a stage heater or the like installed in the processing chamber, there is a possibility that the polymer film is transferred to the stage surface and the stage surface is burnt.

  For these reasons, the polymerized film adhered to the back surface or deposited must be removed. However, a polymerized film, for example, a polyimide thin film has strong chemical resistance, and it is difficult to remove the polyimide thin film only by chemical chemical treatment. For this reason, in order to remove the polyimide thin film, for example, it is necessary to remove the polyimide thin film by including an alteration process that alters the polyimide thin film by irradiating electromagnetic waves having energy such as ultraviolet rays, or including a mechanical polishing process. Will also be needed. For this reason, a corresponding number of steps and a corresponding removal time are required.

  Based on such circumstances, the method for forming the polymer film according to the first embodiment suppresses the formation of the polymer film for the region where the polymer film is not desired to be formed, and the region where the polymer film is desired to be formed. As for the above, a polymerized film is selectively formed.

  FIG. 3 is a flow chart schematically showing an example of a method for forming a polymer film according to the first embodiment of the present invention, and FIGS. 4A to 4C are cross-sectional views schematically showing main steps thereof.

  First, as shown in Step 1 of FIG. 3 and FIG. 4A, an object to be processed is prepared. An example of the object to be processed is a silicon wafer W.

Next, as shown in step 2 of FIG. 3 and FIG. 4B, the formation of the polymer film is suppressed for the film formation suppression region where the polymer film of the silicon wafer W (object to be processed) is not desired to be formed. A film suppression process is performed. In this example, the film formation suppression region is the back surface of the silicon wafer W, and a film formation suppression process is performed here. As an example of the film formation suppression process, trimethylsilyldimethylamine (TMSDMA) gas containing a methyl group is used as the film formation suppression process gas, and this TMSDMA gas is supplied to the back surface of the silicon wafer W. An example of the processing conditions is as follows.
Processing pressure: 1330 to 13300 Pa (10 to 100 Torr)
Processing temperature: 50-200 ° C
Processing time: 1-10min
Thereby, the film formation suppression film 1 by TMSDMA gas is formed on the back surface of the silicon wafer W.

Next, as shown in Step 3 of FIG. 3 and FIG. 4C, the first monomer and the second monomer are polymerized to form a polymerized film on a selected region on the silicon wafer W (object to be processed). A film is selectively formed. In this example, the selected region is a surface to be processed opposite to the back surface of the silicon wafer W, and a polymer film is selectively formed thereon. An example of the polymerized film is a polyimide thin film. As an example of the film formation method, pyromellitic dianhydride (PMDA: C ₁₀ H ₂ O ₆ : monomer A) and 4,4′-oxydianiline (ODA: C ₁₂ H ₁₂ N) are used as raw materials for the polyimide thin film. _A polyimide thin film is formed by vapor deposition polymerization using ₂ O: monomer B). Specifically, the vaporized monomers A and B are premixed and then supplied into the processing chamber of the film forming apparatus. An example of the film forming conditions is as follows.
PMDA flow rate: 50sccm
ODA flow rate: 50sccm
Deposition pressure: 26.6 Pa (0.2 Torr)
Deposition temperature: 200 ° C
Deposition time: 8 min
Cure temperature: 200 ℃
Cure time: 30min

  Thereby, the polyimide thin film 2 is selectively formed on the surface to be processed of the silicon wafer W as a polymerization film.

  As described above, according to the method for forming a polymer film according to the first embodiment, by forming the film formation suppressing film 1 on the back surface of the silicon wafer W, the polyimide thin film 2 can be formed by a vapor deposition polymerization method. A film can be selectively formed only on the processing surface of the wafer W. Therefore, the step of removing the polyimide thin film 2 from the back surface of the silicon wafer W can be omitted, and the advantage that the throughput can be improved when manufacturing an electronic product, for example, a semiconductor integrated circuit device. it can.

  Further, since it is not necessary to prepare a removing device for removing the polyimide thin film 2, the number of necessary devices in the manufacturing factory can be reduced, and the manufacturing cost for electronic products, for example, semiconductor integrated circuit devices can be reduced. Can also be achieved at the same time.

  In the polymer film forming method according to the first embodiment, even when the polyimide thin film 2 is formed on the back surface of the silicon wafer W, the formed polyimide thin film 2 is formed as shown in FIG. As shown in Fig. 4, it can be made minute, scattered in islands. For this reason, the process of removing the polyimide thin film 2 can be simplified as compared with the conventional method in which the polyimide thin film 2 is thickly formed on the back surface. If the process of removing the polyimide thin film 2 is simplified, it is possible to improve the throughput and the like when manufacturing an electronic product, for example, a semiconductor integrated circuit device, as compared with the conventional case.

  As described above, according to the first embodiment, the polymer film that can selectively form the polymer film only in the place where the film is not formed, and the film is not formed in the place where the film is not desired is formed. A film forming method can be obtained.

  Such a method for forming a polymerized film can be effectively applied to a method for manufacturing an electronic product, for example, a method for manufacturing a semiconductor integrated circuit device or a flat panel display.

[Back treatment equipment]
Next, it is possible to selectively perform the film formation suppressing process only on the back surface of the object to be processed, and the back surface is suitable for carrying out the method for forming a polymer film according to the first embodiment of the present invention. An example of the processing apparatus will be described.

  FIG. 5 is a cross-sectional view schematically showing an example of a back surface treatment apparatus suitable for the method for forming a polymer film according to the first embodiment of the present invention. In FIG. 5, illustration of a heating mechanism for heating the object to be processed is omitted.

  As shown in FIG. 5, the back surface processing apparatus 100 includes a processing chamber 101 that accommodates an object to be processed, for example, a silicon wafer W. A support part 102 that supports the silicon wafer W is provided at the bottom of the processing chamber 101. The support part 102 of this example supports the edge of the silicon wafer W horizontally, for example. The support unit 102 divides the space in the processing chamber 101 into two spaces, that is, a processing surface side space 103 and a back surface side space 104.

  An inert gas supply pipe 105 and a film formation suppression processing gas supply pipe 106 for supplying a film formation suppression processing gas to the back surface of the silicon wafer W are provided on the side wall of the processing chamber 101.

  The inert gas supply pipe 105 is connected to an inert gas supply mechanism 107. The inert gas supply mechanism 107 includes an inert gas supply source 108 serving as a supply source of an inert gas such as nitrogen gas. The inert gas supplied from the inert gas supply source 108 is discharged to the processing surface side space 103 through the inert gas supply pipe 105. Thereby, the inert gas is supplied to the processing surface of the silicon wafer W in the processing surface side space 103. The inert gas supplied into the processing surface side space 103 is exhausted from the processing surface side space 103 via an exhaust pipe 109 connected to the processing surface side space 103.

  The film formation suppression processing gas supply pipe 106 is connected to the film formation suppression processing gas supply mechanism 110. The film formation suppression processing gas supply mechanism 110 includes, for example, a film formation inhibitor supply source 111 that is a supply source of a film formation inhibitor such as TMSDMA, and a vaporizer 112 that vaporizes the film formation inhibitor. The film formation inhibitor supply source 111 stores a liquid film formation inhibitor dissolved in a solvent. The film formation inhibitor, which is liquid or dissolved in a solvent, is sent to the vaporizer 112. The vaporizer 112 vaporizes the supplied film formation inhibitor to obtain a film formation suppression process gas. The film formation suppression process gas is discharged to the back surface side space 104 through the film formation suppression process gas supply pipe 106.

  Thereby, the film formation suppression processing gas is supplied into the back surface side space 104, and the film formation suppression processing can be performed only on the back surface of the silicon wafer W in the back surface side space 104. The film formation suppression gas supplied into the back side space 104 is exhausted from the back side space 104 via the exhaust pipe 113 connected to the back side space 104.

  Further, a loading / unloading port 114 for loading / unloading the silicon wafer W into / from the processing chamber 101 is provided on the side wall of the processing chamber 101. The loading / unloading port 114 can be opened and closed by a gate valve 115.

  According to such a back surface processing apparatus 100, while supporting the edge of the silicon wafer W horizontally and using the silicon wafer W, the space in the processing chamber 101 is divided into the processing surface side space 103 and the back surface side space 104. And a support portion 102 that is separated into two spaces.

  As described above, the back surface processing apparatus 100 selectively supplies the film formation suppression processing gas only to the back surface side space 104 by separating the space into the two surfaces of the processing surface side space 103 and the back surface side space 104. It is possible to selectively perform the film formation suppressing process only on the back surface of the silicon wafer W.

  Therefore, the back surface processing apparatus 100 is preferably used for the execution of the method for forming a polymer film according to the first embodiment of the present invention, and particularly preferably used for the film formation suppressing process shown in Step 2 of FIG. it can.

[Preferred film forming process]
The form of the film forming process is roughly divided into a single wafer type and a batch type. The method for forming a polymer film according to an embodiment of the present invention can be applied to either a single wafer type or a batch type.

  However, the method for forming a polymerized film according to an embodiment of the present invention is a batch type, and in particular, a vertical batch type film forming method in which a plurality of objects to be processed are stacked in a height direction on a boat to form a film. This is particularly effective in the apparatus.

  6A is a plan view showing an object to be processed on a boat used in a vertical batch type film forming apparatus, and FIG. 6B is a cross-sectional view taken along line 6B-6B in FIG. 6A.

  As shown in FIGS. 6A and 6B, in the vertical batch type film forming apparatus, a plurality of objects to be processed, for example, a plurality of silicon wafers W, are stacked on the boat 150 in the height direction. In this state, the film is accommodated in a processing chamber for performing a film forming process. The boat 150 is disposed on a rotatable table (not shown) via a heat insulating cylinder and is rotated together with the table. During the film formation process, the film processing gas is discharged into the processing chamber from an injector 151 that extends in the height direction, for example, vertically, in the processing chamber while the boat 150 is rotated along with the silicon wafer W. In the case of the film forming process by the vapor deposition polymerization method, the monomer A (PMDA) and the monomer B (ODA) are premixed in, for example, a premix space 152 provided in the injector 151. And the film-forming process gas which premixed the monomer A and the monomer B is discharged into the inside of a process chamber through the several discharge hole 153 provided in the injector 151, for example in a horizontal direction.

  The boat 150 is made of, for example, quartz. The quartz boat 150 has a plurality of support posts 154 in this example, and a plurality of grooves 155 are formed in the support posts 154. The plurality of silicon wafers W are supported by the plurality of grooves 155.

  In such a boat 150, a plurality of silicon wafers W are supported with the surface to be processed and the back surface exposed. For this reason, the film forming process gas is in contact with not only the surface to be processed of the silicon wafer W but also the back surface. That is, a polymerized film, for example, a polyimide thin film is naturally formed on the back surface of the silicon wafer W.

  The method for forming a polymer film according to the embodiment suppresses the formation of a polymer film for a region where a polymer film is not desired to be formed, and selectively forms a polymer film for a region where a polymer film is desired to be formed. To do.

  Therefore, using the method for forming a polymer film according to the embodiment, the back surface of the silicon wafer W is selected as a region where the polymer film is not desired to be formed, and the processing surface is selected as a region where the polymer film is desired to be formed. In this way, even if a plurality of silicon wafers W are supported on the boat 150 in a state where each of the processing surface and the back surface is exposed, in each of the silicon wafers W, a polymer film, for example, The polyimide thin film is not formed, and the polyimide thin film can be selectively formed only on the surface to be processed.

  Therefore, the method for forming a polymer film according to the embodiment is a batch type, in particular, in a vertical batch type film forming apparatus that performs a film forming process by stacking a plurality of objects to be processed in a height direction on a boat. It is particularly effective.

(Second Embodiment)
[Method of forming polymerized film]
In many cases, the surface to be processed of an object to be processed is an inorganic material such as silicon or a silicon oxide film, in particular, the surface to be processed for an electronic product. On the other hand, the polymerized film is an organic material as represented by a polyimide thin film, for example. When a thin film made of an organic material is formed on an inorganic material, adhesion is often inferior compared to a case where a thin film made of an inorganic material is formed on an inorganic material.

  Based on such a viewpoint, the method for forming the polymer film according to the second embodiment suppresses the film formation of the polymer film in the same manner as in the first embodiment for the region where the polymer film is not desired to be formed. In the region where the polymer film is to be formed, the polymer film is formed while promoting adhesion with the base.

  Furthermore, in 2nd Embodiment, the front-and-back processing apparatus of the to-be-processed object which can perform the film-forming suppression process of the said polymer film and the adhesion promotion process of the said polymer film in parallel is provided.

  FIG. 7 is a flowchart schematically showing an example of a method for forming a polymer film according to the second embodiment of the present invention, and FIGS. 8A to 8C are cross-sectional views schematically showing main steps thereof.

  As shown in FIG. 7 and FIGS. 8A to 8C, the second embodiment is different from the first embodiment in, for example, a step of performing a film formation suppression process for suppressing the formation of a polymerized film (step 2). For example, a process (step 4) of performing an adhesion promoting process for promoting the adhesion of the polymerized film to the process target region where the polymer film of the silicon wafer W (object to be processed) is to be formed is provided. It is.

For example, as shown in FIG. 7 and FIG. 8B, in step 4, the adhesion promoting process is performed on the processing region, for example, the processing surface of the silicon wafer W. In an example of the adhesion promoting process, an ADP gas containing an epoxy group is used as the adhesion promoting process gas, and this ADP gas is supplied to the surface to be processed of the silicon wafer W. An example of the processing conditions is as follows.
Processing pressure: 600 to 760 Pa (4.5 to 5.7 Torr)
Processing temperature: 100-150 ° C
Processing time: 5-10min
Thereby, the adhesion promoting coating 3 by the ADP gas is formed on the surface to be processed of the silicon wafer W.

  Next, as shown in Step 3 of FIG. 7 and FIG. 8C, the first monomer and the second monomer are polymerized to form a polymerized film on a selected region on the silicon wafer W (object to be processed). A film is selectively formed. The selected region in this example is a surface to be processed on which the adhesion promoting coating 3 is formed, and a polymer film is selectively formed thereon. An example of the polymerized film is a polyimide thin film as in the first embodiment, and the film forming method may be the same as that described in the first embodiment.

  Thereby, the polyimide thin film 2 is selectively formed on the surface to be processed of the silicon wafer W through the adhesion promoting coating 3 as a polymerized film.

  According to the method for forming a polymer film according to the second embodiment, the same advantages as those of the first embodiment can be obtained, and further, the polyimide thin film 2 can be bonded to the silicon via the adhesion promoting coating 3. Since the film is formed on the processing surface of the wafer W, the advantage that the adhesion between the polyimide thin film 2 and the silicon wafer W can be improved as compared with the case where the adhesion promoting coating 3 is not provided. Can do.

  As described above, according to the second embodiment, in the region where the polymer film is not desired to be formed, the formation of the polymer film is suppressed as in the first embodiment, and the region where the polymer film is desired to be formed. Can provide a method for forming a polymer film that can form a polymer film while promoting adhesion to the substrate.

  Although the example in which the adhesion promotion processing step (step 4) is performed in parallel with the film formation suppression processing step (step 2) is shown, it is not necessarily performed in parallel. 4) After the film formation suppression processing step (step 2) "or" After the film formation suppression processing step (step 2), the adhesion promoting processing step (step 4) is performed ". It is also possible.

  However, considering the time required for these processes, it is preferable to perform the processes in parallel. An example of the front and back processing apparatus that can be performed in parallel with the adhesion promoting process (Step 4) and the film formation suppressing process (Step 2) will be described below.

[Front and back side processing equipment]
FIG. 9 is a cross-sectional view schematically showing an example of a front and back surface processing apparatus suitable for the method for forming a polymer film according to the second embodiment of the present invention. In FIG. 9, a heating mechanism for heating the object to be processed is not shown.

  As shown in FIG. 9, the front and back surface processing apparatus 200 is different from the back surface processing apparatus 100 shown in FIG. 5 in that an adhesion promoting processing gas supply mechanism 201 is provided instead of the inert gas supply mechanism 107. There is.

  The adhesion promotion processing gas supply mechanism 201 includes, for example, an adhesion promoter supply source 202 that serves as a supply source of an adhesion promoter such as ADP, and a vaporizer 203 that vaporizes the adhesion promoter. The adhesion promoter supply source 202 stores an adhesion promoter in liquid form or dissolved in a solvent. The adhesion promoter in liquid form or dissolved in a solvent is fed to the vaporizer 203. The vaporizer 203 vaporizes the supplied adhesion promoter to produce an adhesion promotion processing gas. The vaporizer 203 is connected to an adhesion promoting processing gas supply pipe 204 provided on the side wall of the processing chamber 101. The adhesion promoting process gas is discharged into the processing surface side space 103 through the adhesion promoting process gas supply pipe 204. The adhesion promoting process gas is discharged into the processing surface side space 103, whereby the adhesion promoting processing gas is supplied into the processing surface side space 103 and the surface of the silicon wafer W in the processing surface side space 103. Adhesion promoting treatment can be applied to. The adhesion promoting processing gas supplied to the processing surface side space 103 is exhausted from the processing surface side space 103 via the exhaust pipe 109.

  Further, the front and back surface processing apparatus 200 includes a film formation suppression processing gas supply mechanism 110 from which a film formation suppression processing gas can be supplied to the back surface side space 104, so that the back surface of the silicon wafer W can be supplied. Can be subjected to film formation suppression processing.

  Moreover, since the processing surface side space 103 and the back surface side space 104 are separated from each other by the support portion 102, the adhesion promoting process and the film formation suppressing process can be performed in parallel.

(Third embodiment)
Next, an example of a film forming apparatus capable of forming a polymer film using a vapor deposition polymerization method will be described as a third embodiment of the present invention.

[Film deposition system]
FIG. 10 is a sectional view schematically showing an example of a film forming apparatus according to the third embodiment of the present invention.

  As shown in FIG. 10, a film forming apparatus 300 is a vertical batch type film forming apparatus that performs a film forming process by stacking a plurality of objects to be processed on a boat in the height direction. The film forming apparatus 300 includes a cylindrical outer tube 301 with a ceiling and a cylindrical inner tube 302 with a ceiling provided inside the outer tube 301. The outer tube 301 and the inner tube 302 are made of, for example, quartz, and the inside of the inner tube 302 accommodates a plurality of objects to be processed, for example, silicon wafers W, and collectively for the plurality of silicon wafers W accommodated. Thus, a processing chamber 303 for performing a film forming process of the polymer film is provided. In this example, as the polymer film, for example, a polyimide film is formed on the surface to be processed of the silicon wafer W by vapor deposition polymerization.

  One side wall of the inner tube 302 is provided with an injector 151 extending vertically, for example, as a gas introduction part for introducing a film forming process gas into the process chamber 303. The injector 151 includes a premix space 152 that is a gas diffusion space. The premix space 152 is connected to the film forming process gas supply mechanism 304.

  The film forming process gas supply mechanism 304 of this example includes a monomer A supply source 305a that serves as a monomer A supply source and a monomer B supply source 305b that serves as a monomer B supply source. An example of monomer A is PMDA, and an example of monomer B is ODA. The monomer A supply source 305a and the monomer B supply source 305b store liquid or dissolved PMDA and ODA in a solvent. These PMDA and ODA are sent to vaporizers 306a and 306b. The vaporizers 306a and 306b vaporize the supplied PMDA and ODA. The vaporizers 306a and 306b are connected to gas supply pipes 307a and 307b connected to the premix space 152, and the vaporized PMDA and ODA are supplied to the premix space 152 via the gas supply pipes 307a and 307b. . The vaporized PMDA and ODA are premixed in the premix space 152 and discharged into the processing chamber 303 through the plurality of discharge holes 153 provided in the injector 151, for example, in the horizontal direction.

  A plurality of exhaust ports 308 for exhausting the inside of the processing chamber 303 are formed on the other side wall of the inner tube 302. Each of the plurality of exhaust ports 308 communicates with a space defined by the outer tube 301 and the inner tube 302. The space functions as an exhaust space 309, and the exhaust space 309 is connected to an exhaust mechanism 311 that exhausts the inside of the processing chamber 303 through an exhaust pipe 310. The exhaust mechanism 311 includes an exhaust device 312 such as a vacuum pump, for example. The exhaust mechanism 311 exhausts the atmosphere inside the processing chamber 303 and sets the pressure inside the processing chamber 303 to a pressure required for processing. Or

  The open side end (lower end side) of the outer tube 301 is connected to a manifold 313 formed of, for example, stainless steel in a cylindrical shape via a seal member 314 such as an O-ring. The manifold 313 supports the lower end side of the outer tube 301. The open side end of the inner tube 302 is connected to an inner tube support 315 provided in a collar shape around the inner side of the manifold 313, for example.

  From the lower side of the manifold 313, a boat 150 on which a plurality of objects to be processed, for example, silicon wafers W can be placed in multiple stages, can be inserted into the processing chamber 303 through the inner tube support portion 315. Yes. The boat 150 is a quartz boat 150 similar to the boat shown in FIGS. 6A and 6B. The quartz boat 150 has a plurality of pillars 154, a plurality of grooves 155 are formed in the pillars 154, and the plurality of silicon wafers W are supported by the plurality of grooves 155.

  The boat 150 is placed on a table 317 via a quartz heat insulating cylinder 316. The table 317 is supported on a rotary shaft 319 that opens and closes an opening on the lower end side of the manifold 313 and penetrates a lid 318 made of, for example, stainless steel. For example, a magnetic fluid seal 320 is provided in the penetrating portion of the rotating shaft 319 and supports the rotating shaft 319 so as to be rotatable while hermetically sealing. Between the peripheral part of the cover part 318 and the lower end of the manifold 313, the sealing member 321 which consists of O-rings is interposed, for example. Thereby, the sealing property in the processing chamber 303 is maintained. The rotating shaft 319 is attached to the tip of an arm 322 supported by an elevating mechanism (not shown) such as a boat elevator, for example. As a result, the boat 150, the lid portion 318, and the like are integrally moved up and down and inserted into and removed from the processing chamber 303. A heating device 323 is provided around the outside of the outer tube 301 so as to surround the outer tube 301. The heating device 323 heats the plurality of silicon wafers W accommodated in the processing chamber 303.

  A film formation apparatus 300 according to the third embodiment includes a film formation suppression processing gas supply mechanism 324 that supplies a film formation suppression processing gas that suppresses the formation of a polymerized film inside the processing chamber 303. The film formation suppression processing gas supply mechanism 324 includes, for example, a film formation inhibitor supply source 325 that is a supply source of a film formation inhibitor such as TMSDMA, and a vaporizer 326 that vaporizes the film formation inhibitor. The film formation inhibitor supply source 325 stores a film formation inhibitor that is liquid or dissolved in a solvent. The film formation inhibitor dissolved or dissolved in a solvent is fed to the vaporizer 326. The vaporizer 326 vaporizes the supplied film formation inhibitor to form a film formation suppression process gas. The vaporizer 326 is connected to a film formation suppression processing gas supply pipe 327. The film formation suppression processing gas supply pipe 327 is made of, for example, a quartz tube, and is bent upward through the side wall of the manifold 313. , Extending vertically toward the processing chamber 303. A film formation suppression process gas is discharged from the tip of the film formation suppression process gas supply pipe 327. Thereby, the film formation suppression processing gas can be suppressed in the processing chamber 303.

  A controller 350 is connected to the film forming apparatus 300. The control unit 350 includes a process controller 351 made of, for example, a microprocessor (computer), and the process controller 351 controls each component of the film forming apparatus 300. A user interface 352 and a storage unit 353 are connected to the process controller 351.

  The user interface 352 includes an input unit including a touch panel display and a keyboard for an operator to perform command input operations in order to manage the film forming apparatus 300, and a display that visualizes and displays the operating status of the film forming apparatus 300. Etc. are provided.

  The storage unit 353 controls a control program for realizing various processes executed by the film forming apparatus 300 under the control of the process controller 351 and causes each component of the film forming apparatus 300 to execute processes according to processing conditions. A so-called process recipe including the following programs is stored. The process recipe is stored in a storage medium in the storage unit 353. The storage medium may be a hard disk or a semiconductor memory, or a portable medium such as a CD-ROM, DVD, or flash memory. Further, the process recipe may be appropriately transmitted from another apparatus via, for example, a dedicated line.

  The process recipe is read from the storage unit 353 according to an operator's instruction or the like from the user interface 352 as necessary, and the process controller 351 executes processing according to the read process recipe, thereby forming the film forming apparatus. 300 performs the requested processing under the control of the process controller 351.

  According to such a film forming apparatus 300, a polymerized film, in this example, a polyimide thin film, can be formed on the surface to be processed of the silicon wafer W by using a vapor deposition polymerization method.

  Further, the film formation apparatus 300 includes a film formation suppression process gas supply mechanism 324. According to the film forming apparatus 300, by using the film formation suppression processing gas supply mechanism 324, for example, a film formation suppression process is performed on a portion in the processing chamber 303 where a polymer film is not desired to be formed. Is possible. The portions where the polymer film is not desired to be formed include portions exposed to the processing space side of the processing chamber 303, for example, the inner wall surface of the processing chamber 303, the surface of the injector 151, the surface of the film formation suppression processing gas supply pipe 327, and This is the surface of the heat insulating cylinder 316 or the like. Further, the surface of the boat 150 is also a portion where the polymer film is not desired to be formed.

  When the film formation suppression process is performed on these surfaces, for example, as illustrated in FIG. 11, the boat 150 is accommodated in the processing chamber 303 in a state where the silicon wafer W is not mounted. In this state, before performing the film formation process of the polymer film, the film formation suppression process gas is discharged from the film formation suppression process gas supply pipe 327 to supply the film formation suppression process gas into the process chamber 303. Thereby, the film formation suppression process which suppresses film-forming of a polymer film is given to the surface of each said member.

  Even if the film formation process of the polymer film is performed using the film formation apparatus 300 by performing the film formation suppression process on the surface of each of the members before performing the film formation process of the polymer film, Formation of a polymerized film can be suppressed on the surface of the member.

  Therefore, the environment inside the processing chamber 303 of the film forming apparatus 300 is an environment in which a polymerized film is difficult to form, and the environment inside the processing chamber 303 can be maintained in a clean state in which particles and the like are hardly generated. When particles generated in the processing chamber 303 can be suppressed in this manner, it is possible to contribute to an improvement in the yield of the electronic product, in this example, the semiconductor integrated circuit device. In addition, the frequency of cleaning the film forming apparatus 300 can be reduced. For this reason, the operating efficiency of the film forming apparatus 300 can be improved. For example, when the semiconductor integrated circuit device is manufactured, the throughput is also improved.

[Deposition inhibitor]
In the said 1st-3rd embodiment, TMSDMA or HMDS was illustrated as a film-forming inhibitor. The film formation inhibitor is not limited to these. 12A to 12O show examples of materials that can be used as a film formation inhibitor that suppresses the formation of a polymer film.

As shown in FIGS. 12A to 12O, as a film formation inhibitor that suppresses the formation of a polymer film,
(A) Methylsilylamine (B) Dimethylsilylamine (C) Trimethylsilylamine (D) Silyldimethylamine (E) Dimethylsilyldimethylamine (F) Trimethylsilyldimethylamine (G) Silyldiethylamine (H) Dimethylsilyldiethylamine (I) Trimethylsilyldiethylamine (J) Trimethylsilylimidazole (K) Trimethylsilylpyrrole (L) Tetramethyldisilazane (M) Hexamethyldisilazane (N) Bis (dimethylamino) silane (O) Bis (dimethylamino) dimethylsilane If at least one of these materials is included, the advantages described in the above embodiment can be obtained.

Also, as shown in FIGS. 12A to 12O, the above examples of materials all include hydrocarbon groups, for example, methyl groups (CH ₃ ), and have silazane bonds (bonds between silicon and nitrogen). is there.

  As mentioned above, although this invention was demonstrated according to some embodiment, this invention is not limited to the said some embodiment, A various deformation | transformation is possible in the range which does not deviate from the meaning.

  For example, in the above embodiment, the processing conditions are specifically exemplified, but the processing conditions are not limited to the above specific examples, and may be appropriately changed according to the volume in the processing chamber 303, for example. Is possible.

  Moreover, according to this invention, the process of removing a polyimide thin film from the back surface of a silicon wafer can be omitted. For this reason, the present invention can improve the throughput of an electronic product, for example, an electronic product such as a semiconductor integrated circuit device or a flat panel display. Therefore, the present invention can be effectively applied to the manufacture of electronic products.

  In addition, the polymer film formed by using the vapor deposition polymerization method can be used as a material for a sidewall insulating film formed on the sidewall of a via or a trench having a high depth and a high aspect ratio, for example. Vias and trenches that are deep and have a high aspect ratio are found in, for example, a vertical wiring structure that electrically connects upper and lower integrated circuits in a three-dimensional semiconductor integrated circuit device using a three-dimensional LSI integration technique. In particular, in the manufacture of a three-dimensional semiconductor integrated circuit device, if a polyimide thin film is formed on the back surface of a silicon wafer or a supporting wafer, a process for removing the polyimide thin film is required every time the wafers are stacked. Will increase. In this regard, according to the present invention, it is possible to eliminate the step of removing the polyimide thin film from the back surface of the silicon wafer or the supporting wafer, which is necessary every time the wafers are stacked. Therefore, the effect of improving the throughput according to the present invention can be obtained more significantly in the manufacture of a three-dimensional semiconductor integrated circuit device.

  The present invention can also be applied to, for example, a method for manufacturing an interposer in which the position of a pad electrode formed in a semiconductor integrated circuit is converted and rearranged in accordance with the form of an electronic product. The interposer also has vias and trenches that are deep and have a high aspect ratio, and a sidewall insulating film is formed on these sidewalls as in the three-dimensional semiconductor integrated circuit device.

  In addition, the present invention can be variously modified without departing from the gist thereof.

  W: silicon wafer, 1 ... film formation suppression coating, 2 ... polyimide thin film, 3 ... adhesion promoting coating.

Claims (16)

A method for forming a polymer film on a workpiece to form a polymer film,
(1) A film formation suppression treatment gas containing a film formation inhibitor is supplied to a film formation suppression region where the polymer film is not desired to be formed on the object to be processed, and the polymerization is performed on the film formation suppression region. Applying a film formation suppression process for suppressing film formation;
(2) A gas containing a first monomer and a gas containing a second monomer different from the first monomer are supplied to the object subjected to the film formation suppressing process, and the first monomer is supplied. And a step of polymerizing the second monomer and the second monomer to selectively form the polymer film on a selected region on the object to be processed. Membrane method.   The method for forming a polymer film according to claim 1, wherein the film formation inhibitor is a silicon compound containing a hydrocarbon group. The silicon compound is
Methylsilylamine dimethylsilylamine trimethylsilylamine silyldimethylamine dimethylsilyldimethylamine trimethylsilyldimethylamine silyldiethylamine dimethylsilyldiethylamine trimethylsilyldiethylamine trimethylsilylimidazole trimethylsilylpyrrole tetramethyldisilazane hexamethyldisilazane bis (dimethylamino) silane bis (dimethylamino) dimethylsilane The method for forming a polymer film according to claim 2, comprising at least one of the following.   4. The method for forming a polymer film according to claim 1, wherein the film formation suppression region is a back surface opposite to a surface to be processed of the object to be processed. . A plurality of the objects to be processed subjected to the film formation suppression process are accommodated along the height direction in the processing chamber in which the step (2) is performed with the back surface exposed.
5. The method for forming a polymer film according to claim 4, wherein the step (2) is performed simultaneously on each of the plurality of objects to be processed. A processing chamber for storing the object to be processed, and performing a film formation process of the polymer film on the stored object to be processed;
A polymer film raw material gas supply mechanism for supplying a gas containing a first monomer and a gas containing a second monomer different from the first monomer into the processing chamber;
A film formation suppression processing gas supply mechanism for supplying a film formation suppression processing gas containing a film formation inhibitor into the processing chamber;
In the processing chamber, before performing the film formation process of the polymer film that polymerizes the first monomer and the second monomer on the target object,
A film formation suppression process for supplying the film formation suppression process gas from the film formation suppression process gas supply mechanism into the processing chamber and suppressing the film formation of the polymer film at least in a portion exposed to the processing space side of the processing chamber. A method for maintaining the environment of the film forming apparatus.   The method for maintaining an environment of a film forming apparatus according to claim 6, wherein the film formation inhibitor is a silicon compound containing a hydrocarbon group. The silicon compound is
Methylsilylamine dimethylsilylamine trimethylsilylamine silyldimethylamine dimethylsilyldimethylamine trimethylsilyldimethylamine silyldiethylamine dimethylsilyldiethylamine trimethylsilyldiethylamine trimethylsilylimidazole trimethylsilylpyrrole tetramethyldisilazane hexamethyldisilazane bis (dimethylamino) silane bis (dimethylamino) dimethylsilane The method for maintaining an environment of a film forming apparatus according to claim 7, comprising at least one of the following. During the film formation suppression process, the boat in which the object to be processed is placed is accommodated in the processing chamber in a state where the object to be processed is not placed,
The film forming apparatus environment according to any one of claims 6 to 8, wherein a film formation suppressing process for suppressing film formation of the polymer film is performed on the surface of the boat in the processing chamber. Maintenance method. A processing chamber for storing the object to be processed, and performing a film formation process of the polymer film on the stored object to be processed;
A polymer film raw material gas supply mechanism for supplying a gas containing a first monomer and a gas containing a second monomer different from the first monomer into the processing chamber;
A film forming apparatus for forming a polymer film having a film formation suppressing treatment gas supply mechanism for supplying a film formation suppressing treatment gas containing a film formation inhibitor into the processing chamber,
A film forming apparatus for carrying out the environment maintaining method for a film forming apparatus according to any one of claims 6 to 9. A method for producing an electronic product comprising a step of forming a polymer film on a workpiece,
(1) A film formation suppression treatment gas containing a film formation inhibitor is supplied to a film formation suppression region where the polymer film is not desired to be formed on the object to be processed, and the polymerization is performed on the film formation suppression region. Applying a film formation suppression process for suppressing film formation;
(2) A gas containing a first monomer and a gas containing a second monomer different from the first monomer are supplied to the object subjected to the film formation suppressing process, and the first monomer is supplied. And a step of polymerizing the second monomer and the second monomer, and selectively forming the polymer film on a selected region on the object to be processed. Method.   The method of manufacturing an electronic product according to claim 11, wherein the film formation inhibitor is a silicon compound containing a hydrocarbon group. The silicon compound is
Methylsilylamine dimethylsilylamine trimethylsilylamine silyldimethylamine dimethylsilyldimethylamine trimethylsilyldimethylamine silyldiethylamine dimethylsilyldiethylamine trimethylsilyldiethylamine trimethylsilylimidazole trimethylsilylpyrrole tetramethyldisilazane hexamethyldisilazane bis (dimethylamino) silane bis (dimethylamino) dimethylsilane The method of manufacturing an electronic product according to claim 12, comprising at least one of the following.   The method for manufacturing an electronic product according to any one of claims 11 to 13, wherein the film formation suppression region is a back surface opposite to a surface to be processed of the object to be processed. A plurality of the objects to be processed subjected to the film formation suppression process are accommodated along the height direction in the processing chamber in which the step (2) is performed with the back surface exposed.
15. The method of manufacturing an electronic product according to claim 14, wherein the step (2) is performed simultaneously on each of the plurality of objects to be processed.   The method of manufacturing an electronic product according to any one of claims 11 to 15, wherein the electronic product is any one of a semiconductor integrated circuit device, a flat panel display, and an interposer.