JP2019207965A - Deposition device and deposition method - Google Patents

Abstract

To provide a technology that improves productivity in a deposition device that supplies a deposition gas that reacts with a substrate to be a film material to deposit a film composed of the film material.SOLUTION: A rotary table is provided inside a processing container, causes a plurality of substrates mounted on a substrate mounting area to revolve around a rotation axis; a first gas supplying unit supplies a first deposition gas to be a raw material of a film material to a first supply position above the rotary table, and a second gas supplying unit supplies a second deposition gas to a second supply position separated from the first supply position in the direction of rotation of the rotary table, and thereby causes the first gas and second gas to be adsorbed to and react with a surface of the heated substrate to form a deposition material.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to a film forming apparatus and a film forming method.

  In the manufacturing process of a semiconductor device, there is a case where a film forming process is performed by reacting a processing gas supplied to a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”).

  As an example of the film forming process, for example, in Patent Document 1, the first processing area and the second processing area, which are arranged in a circumferential direction on a rotary table and formed in an atmosphere separated from each other, Each describes a film forming apparatus in which a first reactive gas nozzle and an activated gas injector are arranged.

JP 2010-239103 A

  The present disclosure provides a technique for improving productivity in a film forming apparatus that forms a film made of a film material by supplying film forming gases that react with each other to a substrate to form a film material.

A film forming apparatus of the present disclosure includes a processing container in which a vacuum atmosphere is formed,
A rotary table provided in the processing container, having a substrate placement area for placing a plurality of substrates on the upper surface thereof, and having a rotation mechanism for revolving the substrate placement area around a rotation axis. When,
A heating mechanism for heating the substrate placed in the substrate placement region;
A first supply above the turntable to adsorb a first film forming gas, which is a raw material gas used as a raw material for a film substance formed on the surface of the substrate, to the surface of the substrate heated by the heating mechanism. A first gas supply unit for supplying the first film-forming gas to a position;
In order to adsorb the second deposition gas, which is the source gas and reacts with the first deposition gas to form the film material, on the surface of the heated substrate, A second gas supply unit that supplies the second film-forming gas to a second supply position that is above and spaced from the first supply position in the rotation direction of the turntable;
And an exhaust part for exhausting the inside of the processing container.

  According to the present disclosure, it is possible to provide a technique for improving productivity in a film forming apparatus that forms a film made of a film material by supplying film forming gases that react with each other to the substrate to form a film material. .

It is a reaction diagram showing the process in which polyimide concerning an embodiment of this indication produces. It is a vertical side view of the film-forming apparatus which concerns on embodiment of this indication. It is a cross-sectional top view of the said film-forming apparatus. It is a vertical side view which shows the example of arrangement | positioning of a gas supply nozzle. It is a vertical side view which shows the other example of arrangement | positioning of a gas supply nozzle. It is explanatory drawing which concerns on the mechanism in which the adsorption amount of the film-forming gas adsorb | sucked to a wafer changes. It is explanatory drawing which shows the view of the setting of the partial pressure of the film-forming gas in the said film-forming apparatus, and the heating temperature of a wafer. It is a top view explaining the flow of the film-forming gas supply area | region and film-forming gas in the said film-forming apparatus. It is explanatory drawing which shows the 1st example of the film-forming gas which concerns on embodiment. It is explanatory drawing which shows the 2nd example of the said film-forming gas. It is explanatory drawing which shows the 3rd example of the film-forming gas. It is a vertical side view which shows the film-forming apparatus used for the preliminary test. It is a characteristic view which shows the film thickness of the film | membrane formed with respect to the distance from the gas supply nozzle for every temperature in a preliminary test.

A film forming apparatus according to one embodiment will be described. In this film forming apparatus, a first film forming gas (raw material gas) containing a first monomer and a second monomer each serving as a raw material of a film substance are formed on a wafer as a substrate, 2 deposition gas is supplied. The first film forming gas and the second film forming gas react with each other to perform a film forming process for forming a film made of a reactant film material on the surface of the wafer. In an embodiment, a bifunctional acid anhydride such as PMDA (C ₁₀ H ₂ O ₆ : pyromellitic anhydride) is used as the first monomer and a bifunctional amine such as ODA ( C ₁₂ H ₁₂ N ₂ O: 4,4′-diaminodiphenyl ether) is used to produce a film material made of polyimide. There is no particular limitation on whether PMDA or ODA is set as the first monomer (first film forming gas) or the second monomer (second film forming gas), and PMDA is used as the second monomer. ODA may be the first monomer.

  The synthesis of polyimide will be described. As shown in FIG. 1, PMDA is specifically a functional group consisting of a five-membered ring in which four carbon elements (C) and one oxygen element (O) are connected to each other by a single bond (single bond). Are provided, and another oxygen element is connected to the carbon element adjacent to the oxygen element by a double bond. The oxygen elements constituting the five-membered ring are arranged so as to face each other, and benzene sharing two carbon elements of each functional group is interposed between these two functional groups, so that the aromatic element is aromatic. It is a monomer. The 5-membered ring is for forming an imide ring.

In ODA, two amino groups (—NH ₂ ) having one nitrogen element (N) and two hydrogen elements (H) are arranged, and these nitrogen elements are at one end side and the other end of diphenyl ether. Each side is joined. In FIG. 1, the description of carbon element and hydrogen element is omitted. Then, when these two types of monomers are mixed with each other, a precursor polyamic acid is generated. Thus, dehydration condensation occurs by heat treatment (heating) of the precursor, and a polyimide shown in the lower part of FIG. 1 is synthesized.

  Next, the configuration of the film forming apparatus will be described. As shown in FIGS. 2 and 3, the film forming apparatus includes a flat, generally circular vacuum vessel (processing vessel) 10 in which a vacuum atmosphere is formed. The vacuum vessel 10 includes a vessel main body 12 that constitutes a side wall and a bottom, and And the top plate 11. In the vacuum vessel 10, a circular turntable 2 is provided on which a plurality of wafers W having a diameter of 300 mm are horizontally placed. As shown in FIG. 2, on the upper surface (one surface side) of the turntable 2, a placement portion (substrate placement region) composed of six circular recesses along the circumferential direction (rotation direction) of the turntable 2. 24 is provided, and the wafer W is placed in the recess of each placement unit 24.

  A rotation mechanism 23 is provided at the center of the rear surface of the turntable 2 via a rotation shaft 22, and the turntable 2 moves upward about a vertical axis (center C of the turntable 2 shown in FIG. 2) during the film forming process. Rotate clockwise as viewed from the top. Therefore, the turntable 2 is configured to revolve the mounting portion 24 on which the wafer W is mounted around the rotation shaft 22. When the turntable 2 on which the wafer W is placed is rotated, the wafer W placed on the placement unit 24 revolves. Reference numeral 20 in FIG. 2 denotes a case body that houses the rotating shaft 22 and the rotating mechanism 23. A purge gas supply pipe 72 for supplying nitrogen gas as a purge gas to the lower region of the turntable 2 is connected to the case body 20.

  As shown in FIG. 2, a plurality of heaters 7 serving as heating mechanisms are provided concentrically below the rotary table 2 at the bottom of the vacuum vessel 10, and the wafers W mounted on the mounting units 24 are heated. It is configured as follows. Reference numeral 70 in FIG. 2 is a covering member that covers the upper side of the heater 7. Further, as shown in FIG. 3, a transfer port 15 for the wafer W is opened on the side wall of the vacuum vessel 10 and is configured to be opened and closed by a gate valve 16. The position facing the transfer port 15 in the vacuum container 10 is a transfer position of the wafer W, and the wafer W passes through the mounting portion 24 below the turntable 2 at a position corresponding to the transfer position. A lifting / lowering pin for lifting and lifting mechanism (both not shown) are provided. The wafer W is transferred to a delivery position via a transfer port 15 by a substrate transfer mechanism (not shown) provided outside the vacuum vessel 10, and is moved to the placement unit 24 by the cooperative action of the substrate transfer mechanism and the lifting pins. Delivered.

  Further, each of the side walls of the vacuum vessel 10 includes a gas supply nozzle (first gas supply unit) 3a for supplying a first film-forming gas containing PMDA toward the turntable 2, and ODA. A second gas supply nozzle (second gas supply unit) 3 for supplying a second film forming gas is provided.

  The first gas supply nozzle 3 a is configured in a cylindrical shape whose tip is sealed, extends from the side wall of the vacuum vessel 10 toward the center, and is disposed above the turntable 2. Further, when viewed in plan, the first gas supply nozzle 3 a is provided in the radial direction of the turntable 2 so as to intersect with a region where the wafer W moves when the turntable 2 is rotated.

  Similarly, the second gas supply nozzle 3 b is configured in a cylindrical shape whose tip is sealed, extends from the side wall of the vacuum vessel 10 toward the center, and is disposed above the turntable 2. When viewed in a plan view, the second gas supply nozzle 3 b is provided in the radial direction of the turntable 2 so as to intersect with the region in which the wafer W moves when the turntable 2 is rotated.

  As shown in FIG. 3, the first and second gas supply nozzles 3 a and 3 b of this example are provided at positions where a line drawn in the diameter direction of the rotary table 2 and the side wall of the vacuum vessel 10 intersect. . That is, the first and second gas supply nozzles 3a and 3b are arranged along the diameter direction of the turntable 2 at positions facing each other across the rotation center C of the turntable 2 when viewed in plan. It can be said that

  A plurality of gas discharge holes 30 arranged at equal intervals along the length direction are provided on the lower surfaces of the first and second gas supply nozzles 3a and 3b configured in a cylindrical shape. With this configuration, as indicated by broken arrows in FIG. 4A, each film forming gas discharged from the discharge holes 30 collides with the surface of the rotary table 2 or wafer W passing under the discharge holes 30 and rotates. It spreads in the space above the table 2 (wafer W).

  As shown in FIG. 4B, the plurality of gas discharge holes 30 may be provided on the upper surfaces of the first and second gas supply nozzles 3a and 3b so as to be arranged at equal intervals along the length direction thereof. Good. In this case, as shown by broken arrows in the drawing, each film forming gas discharged from the discharge hole 30 collides with the ceiling surface of the top plate 11 of the vacuum vessel 10 and turns the rotary table 2 (wafer W). ) In the space above. In addition, when providing the gas discharge hole 30 in the upper surface of the 1st, 2nd gas supply nozzle 3a, 3b, a collision member (not shown) is provided between the gas discharge hole 30 and the top plate 11, and a rotary table is provided. 2 may be guided to the lower side (wafer W side).

  The position where the first film forming gas is supplied from the gas discharge hole 30 provided in the first gas supply nozzle 3a corresponds to the first supply position of this example. Further, the position where the second film forming gas is supplied from the gas discharge hole 30 provided in the second gas supply nozzle 3b corresponds to the second supply position of this example.

  The base end portion of the first gas supply nozzle 3 a is located outside the vacuum vessel 10 and is connected to the gas introduction pipe 53. The upstream side of the gas introduction pipe 53 is connected to the PMDA vaporization unit 51 through the flow rate adjustment unit M1 and the valve V1 in this order.

In the PMDA vaporization unit 51, PMDA is stored in a solid state, and the PMDA vaporization unit 51 includes a heater (not shown) for heating the PMDA. One end of a carrier gas supply pipe 54 is connected to the PMDA vaporization section 51, and the other end of the carrier gas supply pipe 54 is supplied with N ₂ (nitrogen) gas through the valve V2 and the gas heating section 58 in this order. Connected to the source 52. With such a configuration, the N ₂ gas as the carrier gas is supplied to the PMDA vaporization unit 51 in a heated state, and the PMDA heated and vaporized in the PMDA vaporization unit 51 is mixed with the N ₂ gas. As a result, the mixed gas is introduced into the first gas supply nozzle 3a as the first film forming gas.
Here, without supplying the N ₂ gas from the N ₂ gas supply source 52 to the PMDA vaporization unit 51, the PMDA is introduced into the gas using the self-pressure of the PMDA heated and vaporized in the PMDA vaporization unit 51. You may send out to the pipe | tube 53 side.

Further, the downstream side of the gas heating section 58 and the upstream side of the valve V2 in the carrier gas supply pipe 54 are branched to form a gas supply pipe 55. The downstream end of the gas supply pipe 55 is introduced with a gas via the valve V3. The pipe 53 is connected downstream of the valve V1 and upstream of the flow rate adjusting unit M1. With such a configuration, when the first film-forming gas is not supplied to the first gas supply nozzle 3a, the N ₂ gas heated by the gas heating unit 58 is bypassed by the PMDA vaporization unit 51 and the first gas is supplied to the first gas supply nozzle 3a. It can also be introduced into the gas supply nozzle 3a.

Further, a dilution gas supply pipe 590 that supplies N ₂ gas as a dilution gas for diluting PMDA supplied from the PMDA vaporization section 51 side to the gas introduction pipe 53 on the downstream side of the flow rate adjustment section M1. Have joined. An N ₂ gas supply source 592 is connected to the dilution gas supply pipe 590 on the upstream side of the merging position via a flow rate adjusting unit 591 and a valve V9. The N ₂ gas supplied from the dilution gas supply pipe 590 is also used as a cleaning gas for volatilizing and removing the PMDA deposited in the gas introduction pipe 53.

  On the other hand, the base end portion of the second gas supply nozzle 3 b is located outside the vacuum vessel 10 and is connected to the gas introduction pipe 63. On the upstream side of the gas introduction pipe 63, the other end of the gas introduction pipe 63 is connected to the ODA vaporization section 61 through the flow rate adjustment section M2 and the valve V4 in this order.

In the ODA vaporization unit 61, ODA is stored in a liquid (or granular solid) state, and the ODA vaporization unit 61 includes a heater (not shown) for heating the ODA. Further, one end of a carrier gas supply pipe 64 is connected to the ODA vaporization section 61, and the other end of the carrier gas supply pipe 64 is connected to an N ₂ gas supply source 62 via a valve V5 and a gas heating section 68. ing. With such a configuration, the heated carrier gas N ₂ gas is supplied to the ODA vaporization unit 61 in a heated state, and the ODA heated and vaporized in the ODA vaporization unit 61 and the N ₂ gas are A mixed gas is formed and can be introduced into the second gas supply nozzle 3b as a second film forming gas.
Here, without supplying the N ₂ gas from the N ₂ gas supply source 62 to the ODA vaporization unit 61, the ODA is introduced into the gas by using the self-pressure of the ODA heated and vaporized in the ODA vaporization unit 61. You may send out to the pipe | tube 63 side.

Further, the downstream side of the gas heating section 68 and the upstream side of the valve V5 in the carrier gas supply pipe 64 are branched to form a gas supply pipe 65, and the downstream end of the gas supply pipe 65 introduces gas through the valve V6. The pipe 63 is connected to the downstream side of the valve V4 and the upstream side of the flow rate adjusting unit M2. With such a configuration, when the second film forming gas is not supplied to the second gas supply nozzle 3b, the N ₂ gas heated by the gas heating unit 68 bypasses the ODA vaporization unit 61 and is second. It can also be introduced into the gas supply nozzle 3b.

Further, a dilution gas supply pipe 690 that supplies N ₂ gas as a dilution gas for diluting ODA supplied from the ODA vaporization section 61 side to the gas introduction pipe 63 on the downstream side of the flow rate adjustment section M2. Have joined. An N ₂ gas supply source 692 is connected to the dilution gas supply pipe 690 on the upstream side of the merging position via a flow rate adjusting unit 691 and a valve V10. The N ₂ gas supplied from the dilution gas supply pipe 690 is also used as a cleaning gas for volatilizing and removing the ODA deposited in the gas introduction pipe 63.

  Here, in order to prevent PMDA and ODA in the flowing film forming gas from liquefying or adhering to each gas introduction pipe 53, 63, for example, pipe heaters 57, 67 for heating the inside of the pipe are respectively provided in the pipes. Provided around. The pipe heaters 57 and 67 adjust the temperature of each film forming gas (first film forming gas and second film forming gas) discharged from the first and second gas supply nozzles 3a and 3b. For convenience of illustration, the pipe heaters 57 and 67 are shown in only a part of the pipe, but are provided, for example, in the whole pipe so as to prevent liquefaction.

Further, one end of a cleaning gas supply pipe 33 for supplying a cleaning gas is branched from the above-described gas introduction pipe 53 provided on the base end portion of the first gas supply nozzle 3a. The other end of the cleaning gas supply pipe 33 is branched into _two, and an N ₂ gas supply source 34 and an O ₂ (oxygen) gas supply source 35 are connected to each end. In FIGS. 2 and 3, V7 and V8 are valves.
With such a configuration, the O ₂ gas diluted with N ₂ gas can be supplied as the cleaning gas into the vacuum vessel 10 through the first gas supply nozzle 3a. Instead of the gas introduction pipe 53, one end of the cleaning gas supply pipe 33 may be branched from the gas introduction pipe 63 side.

  In addition to these, in the central area including the rotation center C on the upper surface side of the turntable 2, the arrangement position (first supply position) of the first gas supply nozzle 3a and the second gas supply nozzle 3b are arranged. An inhibition unit 21 is provided for inhibiting the flow of the film forming gas between the arrangement position (second supply position) and the arrangement position (second supply position). As shown in FIG. 2 and FIG. 3, the obstruction part 21 is configured by a cylindrical member, is attached to the central region of the turntable 2, and rotates together with the turntable 2.

Here, the N ₂ gas supply source 34 and the O ₂ gas supply source 35 described above are also connected to the separation gas supply pipe 36 in parallel with the cleaning gas supply pipe 33. The downstream end of the separation gas supply pipe 36 is connected to a channel formed so as to penetrate the center of the top plate 11 in the vertical direction, and the end of the channel is formed in a columnar shape. An opening is formed above the center of the upper surface of the portion 21. From the separation gas supply pipe 36, N ₂ gas, which is a separation gas, is supplied to the gap between the lower surface of the top plate 11 and the upper surface of the inhibition portion 21. N ₂ gas is supplied to the first and second supply positions, respectively, and plays a role of inhibiting each film forming gas from passing through the central region of the turntable 2.
Moreover, the separation gas supplying pipe 36, in parallel with the cleaning gas supply pipe 33 described above, (O ₂ gas diluted by N ₂ gas) cleaning gas from the central portion of the top plate 11 into the vacuum chamber 10 You may use for the purpose of supplying.

  Furthermore, the arrangement position (first supply) of the first gas supply nozzle 3a is seen on the periphery of the bottom surface of the vacuum vessel 10 located outside the turntable 2 when viewed along the rotation direction of the turntable 2. Position) and an arrangement position (second supply position) of the second gas supply nozzle 3b, exhaust ports 4 are respectively provided at two positions.

  In the film forming apparatus of this example, these two exhaust ports 4 are provided at positions where a line drawn in the diameter direction of the turntable 2 and the side wall of the vacuum vessel 10 intersect when viewed in plan. Further, a diameter line drawn along the direction in which the first gas supply nozzle 3a, the rotation center C, and the second gas supply nozzle 3b are arranged, an exhaust port on one side, the rotation center C, and an exhaust port on the other side. The exhaust ports 4 are arranged so that the diameter lines drawn along the direction in which the four are arranged are orthogonal to each other.

  Furthermore, the vacuum vessel 10 is placed on the top plate 11 at a film formation inhibition temperature (240 ° C.) that is higher than the heating temperature (200 ° C.) of the wafer W and inhibits film formation gas adsorption and suppresses polyimide formation. A container heating unit 71 is provided for heating the container. Thereby, formation of the polyimide in the vacuum vessel 10 is suppressed.

  In addition, the film forming apparatus includes an ultraviolet irradiation unit 8 for irradiating the rotary table 2 with ultraviolet rays and cleaning the rotary table 2. As shown in FIG. 3, when viewed from the upper surface side, the ultraviolet irradiation unit 8 is provided along the diametrical direction with the center C of the turntable 2 interposed therebetween. The ultraviolet irradiation unit 8 has a structure in which an ultraviolet lamp 83 is disposed inside the lamp house 82, and is configured to irradiate the surface of the rotary table 2 with ultraviolet rays through a transmission window 81 formed on the top plate 11. ing. For convenience of illustration, in FIG. 2, a longitudinal side view of the ultraviolet irradiation unit 8 is also shown above the second gas supply nozzle 3 b.

The film forming apparatus having the above-described configuration includes a control unit 90 that is a computer, and the control unit 90 includes a program, a memory, and a CPU. In the program, instructions (each step: step group) are incorporated so as to advance processing on the wafer W described later. This program is stored in a computer storage medium such as a compact disk, a hard disk, a magneto-optical disk, a DVD, and the like, and is installed in the control unit 90. The control unit 90 outputs a control signal to each part of the film forming apparatus according to the program, and controls the operation of each part. Specifically, the exhaust flow rate by the vacuum pump 43, a flow rate adjustment unit M1, the flow rate of the gas supplied M2 into the vacuum chamber 10 by the supply of _{N 2} gas from the _{N 2} gas supply source 52 and 62, to each of the heaters Each control object such as the supplied power is controlled by a control signal.

  In the film forming apparatus according to the embodiment having the configuration described above, the heating temperature of the wafer W and the supply amounts of the first film forming gas and the second film forming gas (the first film forming gas and the second film forming gas). The film thickness of the polyimide film formed on the surface of the wafer W is controlled using the partial pressure of the film forming gas as an operation variable.

  In an adsorption reaction in which monomers reacting with each other are adsorbed on the surface of the wafer W to form a film substance, the film substance formation amount (hereinafter also referred to as “film formation amount”) is the amount of each monomer adsorbed on the wafer W Depends on. The monomer adsorption amount on the wafer W depends on the collision frequency (collision amount per unit time) of each molecule of the first film forming gas and the second film forming gas which are monomers. Therefore, the adsorption amount of each monomer to the wafer W can be controlled by the partial pressure of the first film forming gas and the second film forming gas.

  On the other hand, when viewed at the molecular level, the monomer desorbs from the surface of the wafer W when the vibration energy of the monomer adsorbed on the surface of the wafer W increases. Therefore, the net adsorption amount of the monomer adhering to the surface of the wafer W is as shown in FIG. 5 in an amount that the monomer collides with the surface of the wafer W per unit time and the adsorbed monomer is the wafer W. It is determined by the balance with the amount desorbed from the surface. When the time during which the monomers of both film forming gases are adsorbed on the wafer W (adsorption residence time) becomes longer, the probability that the monomers adsorbed on the wafer W react with each other increases, and the amount of film formation increases.

  For this reason, for example, in the case where polyimide is produced by the adsorption reaction between PMDA and ODA, if the temperature of the member is heated to 240 ° C. or more, the desorption amount becomes larger than the adsorption amount of the monomer per unit time, The net amount of monomer adsorbed on the surface is almost zero. Therefore, by heating the temperature of the vacuum container 10 other than the wafer W to be deposited to 240 ° C. (corresponding to the film formation inhibition temperature described above), the first and second growth components are formed in the processing container 10. Even if the film gas is supplied at the same time, deposition of the film material on the surfaces of these members can be suppressed.

  Summarizing the mechanism described above, when the supply amount (partial pressure) of each film formation gas is increased, the amount of adsorption of the monomer of the film formation gas increases and the film formation amount increases, and the supply amount (partial pressure) is reduced. When lowered, the amount of adsorption decreases and the amount of film formation decreases. Further, when the temperature of the wafer W is raised, the vibration energy of the monomer is increased, the amount of monomer desorption is increased, and the adsorption residence time is shortened, so that the film formation amount is decreased. On the contrary, when the temperature of the wafer W is lowered (however, it is heated to the reaction temperature or higher), the desorption amount of the monomer decreases and the adsorption residence time increases, so that the film formation amount tends to increase. .

  As discussed above, when film formation is performed by changing the supply amount of each film formation gas or the temperature of the wafer W, attention must be paid to the saturated vapor pressure of these film formation gases. If the pressure exceeds the saturated vapor pressure curve of the film forming gas under a constant temperature condition, the film forming gas may be liquefied and precise film thickness control cannot be performed. Therefore, in order to increase the amount of adsorption of the film forming gas, it is necessary to adjust the partial pressure of the film forming gas and the heating temperature of the wafer W within a range where the film forming gas is not liquefied.

  FIG. 6 is a characteristic diagram showing saturation vapor pressure curves of the first film-forming gas and the second film-forming gas, the horizontal axis indicates the temperature, and the vertical axis indicates the logarithm. In the figure, the saturated vapor pressure curve of the first film-forming gas is indicated by a solid line, and the saturated vapor pressure curve of the second film-forming gas is indicated by a broken line. Note that the saturated vapor pressure curves of the first film forming gas and the second film forming gas shown in FIG. 6 are schematic representations, and do not describe the actual saturated vapor pressure curves of PMDA and ODA.

  As described with reference to FIG. 1, it is assumed that the first monomer and the second monomer react one-to-one to form a repeating unit structure of polyimide. For example, the saturated vapor pressure of the first film-forming gas is An example in which the saturation vapor pressure is lower than that of the second film forming gas will be described.

  In this case, first, with respect to a film forming gas having a low saturated vapor pressure (first film forming gas in the example shown in FIG. 6), the film forming gas is maintained at a temperature and a partial pressure under which the gas state can be maintained. A film forming process is performed. That is, in the example of FIG. 6, the film forming process may be performed under the temperature and partial pressure conditions below the saturation vapor pressure curve of the first film forming gas.

  For example, when the film forming process is performed at a predetermined heating temperature within the temperature range of the wafer W indicated by the one-dot chain line in FIG. By increasing the partial pressure of the film gas, the amount of the monomer colliding with the surface of the wafer W is increased. Thereby, the adsorption amount of the monomer can be increased as much as possible.

  In addition, when the film forming process is performed at a predetermined film forming gas partial pressure in the partial pressure range shown by the two-dot chain line in FIG. 6, the partial pressure of the first film forming gas is also in the range below the saturated vapor pressure. Lower the heating temperature as much as possible to reduce the amount of monomer desorption. As a result, the amount of monomer desorption can be reduced and the adsorption residence time can be increased.

Thus, the supply amount of the low vapor pressure gas is set so that the partial vapor pressure does not exceed the saturation vapor pressure of the low vapor pressure gas having a low saturation vapor pressure.
On the other hand, the film forming gas with a high saturated vapor pressure (second film forming gas in the example shown in FIG. 6) has a stoichiometric ratio equal to that of the low vapor pressure gas (high in partial pressure). It can be considered that vapor pressure gas may be supplied. However, in the case where the partial pressures are uniform, the high vapor pressure gas may be less adsorbed onto the wafer W than the low vapor pressure gas. Therefore, it is preferable that the high vapor pressure gas is supplied in an excessive amount as compared with the low vapor pressure gas in a partial pressure range that does not exceed the saturated vapor pressure.

  Note that the above-described method for setting the supply amount (partial pressure) of the film forming gas can be similarly applied to the case where the film forming gas is prevented from solidifying beyond the sublimation curve.

  Here, as described above, in the present embodiment, as viewed along the rotation direction, 2 sandwiched between the arrangement position of the first gas supply nozzle 3a and the arrangement position of the second gas supply nozzle 3b. Exhaust ports 4 are respectively provided at the positions. With this arrangement, as shown in FIG. 7 to be described later, the respective film forming gases supplied from the first and second gas supply nozzles 3a and 3b are respectively placed in approximately half of the space above the turntable 2. After spreading, it is discharged from each exhaust port 4.

  As described above, for example, when compared with the case where the mixed gas of the first and second film forming gases is supplied to the entire upper surface of the turntable 2, the first and second spaces are limited to a limited space as in the example shown in FIG. When the film forming gas is supplied, the time from supply to exhaust becomes relatively short. Therefore, in the schematic diagram described with reference to FIG. 5, it is preferable that the amount of the monomer colliding with the surface of the wafer W per unit time is large.

  On the other hand, in the film forming apparatus of this example, it is better to adsorb each monomer around the arrangement positions (first and second supply positions) of the first and second gas supply nozzles 3a and 3b as much as possible. The characteristics of the configuration in which the gas supply nozzles 3a and 3b are spaced apart can be exhibited more. From this viewpoint, the heating temperature of the wafer W is moderately lowered and the adsorption residence time of the monomer is adjusted, so that most of each monomer is arranged around the arrangement position of the first and second gas supply nozzles 3a and 3b. Can be adsorbed.

  From the viewpoint of the former (increase in the amount of monomer collision per unit time), the film forming gas to be supplied preferably has a value close to the saturated vapor pressure. On the other hand, as described above, when the supply pressure of the film forming gas exceeds the saturated vapor pressure, the film forming gas is liquefied. Therefore, the supply pressure of the film forming gas is controlled by paying attention to the film forming gas (low vapor pressure gas) having a low saturated vapor pressure among the first and second film forming gases. That is, when the saturated vapor pressure of the low vapor pressure gas is P0 and the partial pressure of the low vapor pressure gas supplied from the first gas supply nozzle 3a is P1, the supply pressure of the low vapor pressure gas is a value of P1 / P0. Is preferably set to a value as high as possible, which is 1 or less.

  On the other hand, as described above, the deposition gas (high vapor pressure gas) having a high saturation vapor pressure among the first and second film formation gases has a saturated vapor pressure of P0 ′ and a partial pressure of the high vapor pressure gas. Is set to P1 ′, the value of P1 ′ / P0 ′ is 1 or less, and the gas is preferably supplied from the second gas supply nozzle 3b at a partial pressure higher than that of the low vapor pressure gas.

Further, from the viewpoint of adjusting the monomer adsorption residence time, the heating temperature of the wafer W is moderately lowered, and most of each monomer is disposed around the positions where the first and second gas supply nozzles 3a and 3b are arranged. What is necessary is just to adjust to the temperature which adsorb | sucks.
Considering these viewpoints comprehensively, in this example, the reaction efficiency E, which is the ratio of consumption of the film forming gas to the supplied film forming gas (based on the low vapor pressure gas) is 5% or more, The heating temperature of the heater 7 is set so that the wafer W is heated to a temperature that is, for example, 10% within a range of 25% or less.

Specifically, the flow rate of the low vapor pressure gas supplied from the first gas supply nozzle 3a is L1, and the exhaust flow rate of the low vapor pressure gas reaching the exhaust port 4 is L1 ′. The ratio of consumed film forming gas is defined as reaction efficiency E (%). At this time, the amount of the film forming gas consumed in the film forming process can be obtained from a difference value between the supply flow rate L1 of the low vapor pressure gas and the exhaust flow rate L1 ′ of the low vapor pressure gas. Based on this idea, the heating temperature of the wafer W is set so that the reaction efficiency E represented by the following formula (1) is 5% or more and 25% or less. As a result, the adsorption and reaction of each film forming gas on the surface of the wafer W can be advanced while supplying the first and second film forming gases to approximately half of the space above the turntable 2. . The exhaust flow rate L1 ′ can be obtained from the flow rate and composition of the gas exhausted from the exhaust port 4.
E (%) = {(L1-L1 ′) / L1} × 100 (1)

Based on the concept described above, the operation of the film forming apparatus of this example for forming a polyimide film will be described.
For example, six wafers W are mounted on the mounting portions 24 of the turntable 2 by an external substrate transfer mechanism (not shown), and the gate valve 16 is closed. The wafer W placed on the placement unit 24 is heated to a predetermined temperature, for example, 160 ° C. by the heater 7. Then it was evacuated through the exhaust port 4 by the vacuum evacuation unit 43, the _{N 2} gas supplied from _{N 2} gas supply source 52 and 62, the pressure in the vacuum chamber 10 (the total pressure), for example, 50 Pa (0. 4 Torr), and the rotary table 2 is rotated at, for example, 10 rpm to 30 rpm.

  Next, the first film forming gas (low vapor pressure gas) containing PMDA is supplied to the first gas nozzle 3a at a partial pressure of, for example, 1.33 Pa (0.01 Torr) while maintaining the above total pressure. Further, the second film forming gas (high vapor pressure gas) containing ODA is supplied to the second gas supply nozzle 3b at a partial pressure of, for example, 1.46 Pa (0.011 Torr). These film forming gases are separately supplied into the processing container 10 from the first and second supply positions corresponding to the arrangement positions of the first and second gas supply nozzles 3a and 3b, respectively. PMDA and ODA are continuously supplied during the film forming process.

The PMDA and ODA supply methods can be broadly classified into carrier gas supply methods and self-pressure supply methods. Carrier gas supply system, to the _{N 2} gas supply source 52 and 62 PMDA vaporizing unit 51 and ODA vaporizing section 61 from _{N 2} gas was introduced as a carrier gas, to supply the PMDA and ODA. In the self-pressure supply system, PMDA and ODA are supplied using the self-pressure of each gas in the PMDA vaporization unit 51 and the ODA vaporization unit 61 without using a carrier gas.
In these supply methods, by supplying the dilution gas from the dilution gas supply pipes 590 and 690, each gas can be stably supplied to the first and second gas supply nozzles 3a and 3b. .

In the carrier gas supply method, the valves V1 and V2 are opened, the valve V3 is closed, N ₂ gas is introduced into the PMDA vaporization section 51, and a mixed gas of PMDA and N ₂ gas is directed toward the first gas supply nozzle 3a. Air. For example this time, for the purpose of adjusting the flow rate of the gas discharged from the gas discharge holes 30, varying the supply amount of N ₂ gas from the N ₂ gas supply source 52, the amount of vaporization PMDA in the PMDA vaporization section 51 May change. Therefore, leave an open state of the valve V9 of the dilution gas supply pipe 590 side, the supply amount of N ₂ gas from the N ₂ gas supply source 52 remains constant state, increase or decrease the flow rate of N ₂ gas is dilution gas To do. By this operation, the gas flow rate from each gas discharge hole 30 can be adjusted while the PMDA vaporization amount in the PMDA vaporization unit 51 is kept constant.

Similarly, for the carrier gas supply system on the ODA side, the valves V4 and V5 are opened, the valve V6 is closed, N ₂ gas is introduced into the ODA vaporization unit 61, and the mixed gas of ODA and N ₂ gas is used as the second gas. Air is supplied toward the supply nozzle 3b. Then, leave an open state of the valve V10 of the dilution gas supply pipe 690 side, the supply amount of N ₂ gas from the N ₂ gas supply source 62 remains constant state, increase or decrease the flow rate of N ₂ gas is dilution gas To do. By this operation, the gas flow rate from each gas discharge hole 30 can be adjusted while keeping the vaporization amount of ODA in the ODA vaporization unit 61 in a constant state.

On the other hand, in the self-pressure supply system, opening the valve V1, without using the N ₂ gas as a carrier gas by closing the valve V2, V3, by its own pressure of PMDA generated in the PMDA vaporizing unit 51 first gas Air is supplied toward the supply nozzle 3a. However, a sufficient flow rate cannot be ensured only by the self-pressure of PMDA, and the diffusibility of PMDA from each gas discharge hole 30 may not be ensured. Accordingly, the valve V9 on the side of the dilution gas supply pipe 590 is kept open, and the flow rate of N ₂ gas that is the dilution gas is increased or decreased so that PMDA of a predetermined gas flow rate is supplied from each gas discharge hole 30. At this time, the action of drawing PMDA from the PMDA vaporization section 51 side to the first gas supply nozzle 3a side may be achieved by the flow of N ₂ gas supplied from the dilution gas supply pipe 590 side.

Similarly for the ODA side self-pressure supply system, the valve V4 is opened, the valves V5 and V6 are closed, and the ODA generated in the ODA vaporization section 61 is sent to the second gas supply nozzle 3b by the self-pressure. I care. Then, the valve V10 on the side of the dilution gas supply pipe 690 is kept open, and the flow rate of N ₂ gas that is the dilution gas is increased or decreased so that PMDA of a predetermined gas flow rate is supplied from each gas discharge hole 30. At this time, the action of drawing ODA from the ODA vaporization section 61 side to the second gas supply nozzle 3b side may be achieved by the flow of N ₂ gas supplied from the dilution gas supply pipe 690 side.

  As described with reference to FIGS. 4A and 4B, the film forming gases (PMDA and ODA) supplied from the first and second gas supply nozzles 3a and 3b are around these gas supply nozzles 3a and 3b. Toward the surface of the rotary table 2 (wafer W). Then, as shown by the flow lines in FIG. 7, above the turntable 2, there are flow regions for the film forming gas flowing from the supply positions (first and second supply positions) toward the exhaust port 4. It is formed.

  Here, as shown in FIG. 7, when viewed from the first gas supply nozzle 3a, the two exhaust ports 4 are arranged at positions sandwiching the first gas supply nozzle 3a and the rotary table 2 from the side. For this reason, the flow area of the first film-forming gas is formed so as to cover almost half of the turntable 2 from the discharge holes 30 of the first gas supply nozzle 3a toward the exhaust ports 4. In FIG. 7, the region covered by the flow line of the film forming gas supplied from the first gas supply nozzle 3a corresponds to the flow region of the first film forming gas.

  Similarly, with respect to the second gas supply nozzle 3b, two exhaust ports 4 are arranged at positions sandwiching the second gas supply nozzle 3b and the rotary table 2 from the side. Therefore, the second film-forming gas flow region is formed so as to cover the remaining half of the turntable 2 from the discharge holes 30 of the second gas supply nozzle 3b toward the exhaust ports 4. . In FIG. 7, the region covered by the flow line of the film forming gas supplied from the second gas supply nozzle 3 b corresponds to the flow region of the second film forming gas.

  Here, the flow regions of the first and second film forming gases in the processing vessel 10 are not separated from each other by a partition wall or the like. Therefore, part of one film forming gas can enter the flow area of the other film forming gas as the flow of each film forming gas is disturbed or diffused. However, since the inhibition portion 21 described above is provided in the central region of the turntable 2, one film forming gas enters the flow region of the other film forming gas across the central region. The formation of flow (entrance flow) is suppressed. Further, the separation gas is supplied from the separation gas supply pipe 36 toward the gap between the top plate 11 and the obstruction part 21, whereby the separation gas flows out from the gap toward the radial direction of the turntable 2. Is formed. This separation gas flow also suppresses the formation of the inflow of film forming gas.

  Based on the above-described operation, each wafer W revolving around the center C of the turntable 2 alternately has a first film formation gas flow area and a second film formation gas flow area. , Pass repeatedly. At this time, as shown in FIG. 10 to be described later, the result of the preliminary experiment is shown in the vicinity of the first supply position where the first gas supply nozzle 3a is arranged in the flow region of the first film forming gas. The heating temperature of the wafer W is set so that the adsorption amount of the first monomer is the largest and the adsorption amount decreases as it approaches the exhaust port 4 side. As a result, the adsorption of the first monomer PMDA and the reaction between ODA and PMDA already adsorbed on the wafer W proceed around the first supply position.

Further, the heating temperature described above has the largest amount of adsorption of the second monomer even in the vicinity of the second supply position where the second gas supply nozzle 3b is disposed, and the amount of adsorption as it approaches the exhaust port 4 side. Is set to be less. As a result, the adsorption of ODA, which is the second monomer contained in the second deposition gas, and the reaction between PMDA and PMDA already adsorbed on the wafer W proceed around the second supply position. .
By these actions, the reaction between PMDA and ODA proceeds, polyimide is formed on the surface of the wafer W, and deposition is performed by depositing the polyimide.

  At this time, if the rotation speed of the turntable 2 is too low, the movement time from the time when each wafer W passes through the film deposition gas supply position on one side to the position on the other film deposition gas supply. Becomes longer. If the moving time is longer than the residence time of each monomer, the amount of monomer desorbed from the wafer W increases, and a sufficient film formation rate may not be obtained. From this point of view, the turntable 2 reaches the film deposition gas supply position on the other side while the monomer adsorbed in the vicinity of the one film deposition gas supply position remains on the surface of the wafer W. Thus, it is preferable to adjust the rotation speed. A suitable rotation speed is determined by performing a preliminary experiment in which film formation is actually performed by changing the set value of the rotation speed, and by specifying a rotation speed range in which the film formation amount per unit time is equal to or greater than a desired value. Can grasp.

  At this time, in the film forming apparatus according to the embodiment as described above, if the partial pressure of the first film forming gas or the second film forming gas is P1, and the saturated vapor pressure of the film forming gas is P0. The values of P1 / P0, which is the ratio of these pressures, are set to be 1 or less, respectively. In addition, among the first and second film forming gases, the partial pressure of the high vapor pressure gas having a relatively high vapor pressure is set to be higher than the partial pressure of the low vapor pressure gas having a low vapor pressure. Yes. As a result, while preventing the liquefaction of the low vapor pressure gas, the adsorption to the wafer W and the reaction between PMDA and ODA are efficiently performed in the time until each deposition gas passes through the corresponding flow area. Can be advanced.

  In addition, the heating temperature of the wafer W is set so that the reaction efficiency E of the first and second film forming gases is, for example, 10% in the range of 5% to 25% (reacting PMDA and ODA). In this example, 160 ° C.). Within this reaction efficiency range, it is possible to once desorb a part of the monomer adsorbed on the wafer W and re-supply it to the downstream side of each flow region.

  Accordingly, the first and second film-forming gases supplied from the first and second gas supply nozzles 3a and 3b are consumed by the respective monomers at the supply positions (first and second supply positions). Absent. As a result, PMDA and ODA can be supplied over the front surface of each deposition gas flow region. In this way, polyimide is gradually deposited by repeatedly passing through the first film forming gas flow region and the second film forming gas flow region while the monomers are adsorbed on the wafer W. A membrane is performed.

When a film having a preset film thickness is formed based on the operation described above, the supply of the film forming gas, the rotation of the turntable 2 and the heating of the wafer W are stopped, and the procedure opposite to that at the time of loading is performed. After unloading the wafer W after the film formation process, the process waits for the start of the next film formation process.
At this time, before starting the next film forming process, for example, an O ₂ gas that is a cleaning gas may be supplied into the vacuum vessel 10 and ultraviolet rays may be irradiated by the ultraviolet lamp 83. Thus, the activated O ₂ gas is supplied to the surface of the turntable 2, and a process of decomposing the polyimide film formed in the region not covered by the wafer W other than the mounting unit 24 can be performed. Further, the film formed on the turntable 2 may be disassembled after performing a predetermined number of film forming processes.

  According to the above-described embodiment, the first film forming gas is supplied to the first supply position above the turntable 2, and the second supply is separated from the first supply position in the rotation direction of the turntable 2. A second deposition gas is supplied to the position. With this configuration, the first film forming gas and the second film forming gas can be supplied in parallel to the plurality of wafers W, so that productivity is improved.

  Here, the positions where the two exhaust ports 4 are provided are not limited to the arrangement examples shown in FIGS. 3 and 7. When viewed along the rotation direction of the turntable 2, the first gas supply nozzle 3a is sandwiched between the arrangement position (first supply position) and the second gas supply nozzle 3b (second supply position). In such a range, each exhaust port 4 may be provided at a position different from the position shown in these drawings, and the range of the flow region of each film forming gas may be changed.

  In addition, as shown in FIG. 8A, a film formed using the film forming apparatus according to the embodiment reacts with a film forming gas containing a monomer having an amino group and a film forming gas containing a monomer having an epoxy group. It may be formed of a film substance having an epoxy bond. Further, as shown in FIG. 8B, a film may be formed from a film substance having a urea bond with a film forming gas containing a monomer having an amino group and a film forming gas containing a monomer having an isocyanate. Alternatively, as shown in FIG. 8C, a film may be formed from a film material having an imide bond by a film forming gas containing a monomer having an amino group and a film forming gas containing a monomer that is an acid anhydride. Furthermore, a film substance having a urethane bond by a film forming gas containing a monomer that is alcohol and a film forming gas containing a monomer that is isocyanate, a film forming gas containing a monomer having an amino group, and a monomer that is a carboxylic acid A film may be formed from a film substance having an amide bond with a film-forming gas containing. Further, a film may be formed by forming a polymer by copolymerization, two-molecule reaction, three-molecule reaction, or a mixture of three kinds.

  The first film forming gas and the second film forming gas are formed by combining monomers having functional groups such as isocyanate groups and amino groups which are monofunctional with each other and monomers having two or more functional groups with each other. May be formed. Furthermore, as a skeleton structure of a monomer for forming a film substance, aromatic, alicyclic, aliphatic, and aromatic and aliphatic conjugates can be used.

In addition, the deposited film may be modified by irradiating the wafer W placed on the turntable 2 with ultraviolet rays by the ultraviolet irradiation unit 8 described above. Alternatively, instead of the ultraviolet irradiation unit 8, the surface of the turntable 2 may be irradiated with infrared rays, and the film material attached to the turntable 2 may be removed by heat. Further, both an irradiation unit for cleaning and an irradiation unit for modifying the wafer W may be provided.
As discussed above, the embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The above-described embodiments may be omitted, replaced, and modified in various forms without departing from the scope and spirit of the appended claims.

  Next, as described with reference to FIG. 7, the monomer contained in each film forming gas is adsorbed around the first and second gas supply nozzles 3 a and 3 b (positions of the first and second supply positions). The result of a preliminary experiment for confirming that this is possible will be described. As shown in FIG. 9, a single-wafer type film forming apparatus provided with a mounting table 101 on which a wafer W is mounted in a vacuum vessel 100 and having a heater 102 embedded in the mounting table 101 was used for a preliminary experiment. In addition, a common gas supply nozzle 3 for supplying a first film forming gas (PMDA) and a second film forming gas (ODA) is provided on the side wall of the vacuum vessel 100, and the wafer mounted on the mounting table 101. The film forming gas can be supplied in the lateral direction toward the surface of W. On the other hand, an exhaust port 4a constituting an exhaust unit is provided at a position opposite to the direction in which the film forming gas is discharged from the gas supply nozzle 3 with the mounting table 101 interposed therebetween.

Using such a film forming apparatus, the temperature of the wafer W is set to 140, 160, 180, and 200 ° C., respectively, and the film forming process is performed. The film extends in the film forming gas discharge direction and runs along the straight line passing through the center of the wafer W. The film thickness distribution at different positions was examined. The pressure in the vacuum vessel 100 and the partial pressures of the first and second film forming gases are set in the same manner as the film forming apparatus according to the embodiment described with reference to FIGS. As for the film forming gas supply sequence, a sequence in which the first film forming gas and the second film forming gas are mixed and then continuously supplied from the gas supply nozzle 3 is used as in the embodiment.
FIG. 10 is a characteristic diagram showing the film thickness distribution when the heating temperature of the wafer W is set to 140, 160, 180 and 200 ° C., respectively. The horizontal axis in FIG. 10 indicates the distance from the film formation gas discharge position, and the vertical axis indicates the film thickness of the polyimide film formed at each position.

  As shown in FIG. 10, at any heating temperature, it can be seen that the film thickness of the film formed on the wafer W decreases as the distance from the gas supply nozzle 3 increases. For example, when the heating temperature of the wafer W is the lowest, 140 ° C., a film formed on the wafer W is thicker than other heating temperatures in a region near the discharge position from the gas supply nozzle 3. As the distance from the discharge position increases, the distance decreases rapidly. As described with reference to FIG. 6, when the heating temperature is relatively low, the amount of the monomer adsorbed on the wafer W is reduced, so that the film in the region near the discharge position is thickened. It is considered that the amount of monomer in the film-forming gas flowing downstream decreases rapidly, and the film becomes thinner accordingly.

  On the other hand, when the heating temperature of the wafer W is increased to 200 ° C., for example, the film thickness decreases so as to draw a linear line with respect to the distance from the discharge position, but the decrease amount is small. This is presumably because the amount of monomer released from the wafer W increases as the heating temperature increases. Furthermore, it is considered that the amount of monomer released from the wafer W increases, so that even if the distance from the gas supply nozzle 3 is increased, the film forming gas is likely to remain in the gas. It can be said that it is easy to form a film.

  Compared to these heating temperatures, in the case of 160 ° C., a relatively thick film is formed in a region close to the discharge position from the gas supply nozzle 3, and as the distance from the discharge position increases, The film thickness distribution gradually decreases. As described above, it was confirmed that by adjusting the heating temperature of the wafer W, it is possible to appropriately widen the region for adsorbing the monomer in the vicinity of the deposition gas supply position. Even when monomers other than PMDA and ODA are used as the first and second monomers, the monomer contained in the film forming gas is adsorbed by setting an appropriate heating temperature according to the reaction energy. The region can be adjusted similarly to the example shown in FIG. Therefore, when the film forming process is performed using the first and second gas supply nozzles 3a and 3b according to the embodiment described with reference to FIGS. 3 and 7, the heating temperature of the wafer W is appropriately selected. Thus, it can be said that the film forming process can proceed by adsorbing and reacting the monomer around each supply position.

3a First gas supply nozzle 3b Second gas supply nozzle 4 Exhaust port 2 Rotary table 10 Vacuum vessel 7 Heater

Claims (10)

A processing vessel in which a vacuum atmosphere is formed;
A rotary table provided in the processing container, having a substrate placement area for placing a plurality of substrates on the upper surface thereof, and having a rotation mechanism for revolving the substrate placement area around a rotation axis. When,
A heating mechanism for heating the substrate placed in the substrate placement region;
A first supply above the turntable to adsorb a first film forming gas, which is a raw material gas used as a raw material for a film substance formed on the surface of the substrate, to the surface of the substrate heated by the heating mechanism. A first gas supply unit for supplying the first film-forming gas to a position;
In order to adsorb the second deposition gas, which is the source gas and reacts with the first deposition gas to form the film material, on the surface of the heated substrate, A second gas supply unit that supplies the second film-forming gas to a second supply position that is above and spaced from the first supply position in the rotation direction of the turntable;
And a gas exhaust apparatus for exhausting the inside of the processing container.   The said 1st supply position and the said 2nd supply position are provided in the position which opposes on both sides of the rotation center of the said rotary table, when planarly viewed. Deposition device.   In the central region including the rotation center of the turntable on the upper surface side of the turntable, the flow of the film forming gas between the first supply position and the second supply position is hindered. The film forming apparatus according to claim 2, further comprising an obstructing unit for the purpose.   The exhaust portion is a position sandwiched between the first supply position and the second supply position when viewed along the rotation direction of the rotary table, and is provided outside the rotary table. The film forming apparatus according to claim 1, wherein the film forming apparatus is provided. The saturation vapor pressure of the low vapor pressure gas having a low saturation vapor pressure among the first film formation gas and the second film formation gas is P0, and the first and second film formation supplied from the gas supply unit. Assuming that the partial pressure of the gas is P1, the supply pressures of the first and second film forming gases are set so that P1 / P0 is 1 or less,
The heating mechanism heats the substrate to a temperature at which a reaction efficiency, which is a ratio of a consumption amount of the film forming gas to each supplied film forming gas, is 5% or more and 25% or less. 2. The film forming apparatus according to 1.   The irradiation part which irradiates the light for performing the process of a film | membrane toward the said rotary table side was provided in the ceiling surface side of the said process container, The one of Claim 1 thru | or 5 characterized by the above-mentioned. The film-forming apparatus of description.   The said irradiation part is an ultraviolet irradiation part for activating the cleaning gas supplied through the said gas supply part, and cleaning the film | membrane adhering to the surface of the said rotary table. The film-forming apparatus of description.   The film forming apparatus according to claim 6, wherein the irradiation unit is an ultraviolet irradiation unit for modifying the film. A substrate is placed in a plurality of substrate placement areas that are provided in a processing vessel where a vacuum atmosphere is formed and is formed on one side of the turntable, and the turntable is rotated to revolve the substrate around its rotation axis. A process of
Next, the substrate placed on the substrate placement region is heated, and a first film forming material gas serving as a raw material for a film substance formed on the surface of the substrate is heated on the surface of the heated substrate. Supplying the first deposition gas to a first supply position above the turntable to adsorb gas;
In parallel with the supply of the first film-forming gas, the source gas, the second film-forming gas for reacting with the first film-forming gas to form the film material, is heated. In order to adsorb to the surface of the substrate, the second film forming gas is supplied to a second supply position above the turntable and spaced from the first supply position in the rotation direction of the turntable. Process,
And a step of exhausting the inside of the processing container. In the step of supplying the film forming gas, the saturated vapor pressure of the low vapor pressure gas having a low saturated vapor pressure among the first film forming gas and the second film forming gas is set to P0 and supplied from the gas supply unit. Assuming that the partial pressure P1 of the first and second film-forming gases is set, the supply pressures of the first and second film-forming gases are set so that P1 / P0 is 1 or less,
The substrate is heated to a temperature at which a reaction efficiency, which is a ratio of consumption of the film forming gas to each film forming gas supplied to the processing container, is 5% or more and 25% or less. 10. The film forming method according to 9.

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