JP2014086468A - Vapor deposition apparatus and deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technology for efficiently cleaning a deposition chamber in a short period of time and to a high cleaning extent.SOLUTION: A vapor deposition apparatus includes: a deposition chamber 4 in which a substrate S is disposed, for depositing a film on the substrate S; a first supply pipe 21 which supplies gas containing a halogen and first reactive gas which reacts with the gas to deposit the film on the substrate S, into the deposition chamber 4; a second supply pipe 31 which supplies gas containing an organic metal and second reactive gas which reacts with the gas to deposit the film on the substrate S, into the deposition chamber 4; a substrate holding part 5 with which a substrate holding base 51 for holding the substrate S is provided within the deposition chamber 4; heating means 53 for deposition which is provided in the substrate holding base 51 and heats the substrate S; and heating means 60 for cleaning which is provided on a wall surface of the deposition chamber 4 excluding the substrate holding base 51 and heats the wall surface.

Description

  The present invention relates to a vapor phase growth apparatus and a film forming method.

  Conventionally, light emitting elements such as a light emitting diode element and a semiconductor laser element are manufactured as follows, for example. A sapphire, SiC, nitride such as GaN, AlN or the like is used as a substrate, and a semiconductor layer is stacked thereon by a metal organic chemical vapor deposition (MOCVD) method. As the semiconductor layer, for example, an underlayer such as an undoped GaN layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are grown.

  In recent years, in order to reduce defects during crystal growth caused by lattice mismatch and further remove a substrate such as a sapphire substrate, it is required to increase the thickness of an underlayer such as an undoped GaN layer to, for example, 30 μm to 50 μm. It has been.

  However, the film formation rate in the MOCVD method is generally 1 μm / hour to 3 μm / hour, and since the film formation rate is slow, it takes a very long time to form a thick underlayer.

Therefore, a method is conceivable in which a thick underlayer is formed by HVPE (hydride vapor phase epitaxy), which has a high growth rate, and then an upper semiconductor layer is formed by MOCVD.
The film forming speed in the HVPE method is generally about 100 μm / hour to 300 μm / hour, and it is considered that the device manufacturing speed is remarkably increased by using the HVPE method.

In order to meet such a demand, Patent Document 1 discloses an apparatus 900 including an HVPE chamber 901 and an MOCVD chamber 902 as shown in FIG.
In this apparatus 900, after forming a first layer (for example, an underlayer such as an undoped GaN layer) in the HVPE chamber 901, the substrate is taken out from the HVPE chamber 901 and moved to the MOCVD chamber 902, whereby the second layer (underlayer) An upper semiconductor layer) can be formed.

US Patent Application Publication No. 2009/0194026 JP 2010-67775 A JP 2010-265178 A

  By the way, when a nitride such as GaN is vapor-phase grown to obtain a GaN free-standing substrate or a GaN-based semiconductor element, it is an important technical problem to obtain a GaN-based semiconductor layer having a good film quality. In order to solve this problem, various techniques for controlling the growth conditions of GaN have been developed so far (Patent Documents 2 and 3).

  However, even if the growth conditions of GaN are controlled to a high degree, there are cases in which a film that is not necessarily of high quality is generated at a certain frequency. When the present inventors examined this cause, it discovered that the foreign material adhering to the wall surface of a growth apparatus mixes in a growth layer, and this may cause a growth defect.

  In the conventional vapor phase growth apparatus, when removing the foreign matter adhering to the wall surface, an operation of replacing a member forming the film forming chamber or cleaning the film forming chamber for a long time is performed. Even when cleaning is performed for a long time, it has been difficult to completely remove the foreign matter adhering to the wall surface.

  Therefore, the present invention has been made in view of the above circumstances, and provides a technique for cleaning a film forming chamber efficiently in a short time and with high cleanliness.

  According to the conventional vapor phase growth apparatus, the deposition chamber is appropriately cleaned before the accumulation of foreign matters on the sidewall surface of the deposition chamber becomes significant. However, in the conventional method, there has been no technique capable of cleaning the film forming chamber efficiently in a short time and with high cleanliness.

  Therefore, the present inventors diligently studied a technique for cleaning the film forming chamber efficiently in a short time and with high cleanliness. As a result, it has been found that by providing a heating means on the wall surface of the film forming chamber, the film forming chamber can be efficiently cleaned in a short time and with high cleanliness, and the present invention has been achieved.

According to the present invention, a substrate is disposed inside, and a film formation chamber for forming a film on the substrate;
A first supply pipe for supplying a gas containing a halogen element in the film formation chamber and a first reactive gas for reacting with the gas to form a film on the substrate;
A second supply pipe for supplying a gas containing an organic metal in the film formation chamber and a second reactive gas for reacting with the gas containing the organic metal to form a film on the substrate;
A substrate holder provided with a substrate holder for holding the substrate in the film forming chamber;
A film-forming heating means provided on the substrate holding table for heating the substrate;
A heating means for cleaning provided on the wall surface of the film forming chamber other than the substrate holder, and heating the wall surface;
A vapor phase growth apparatus is provided.

According to the present invention, there is also provided a film forming method for forming a film on a substrate using the vapor phase growth apparatus,
Supplying a reactive gas to the film forming chamber to form a film on the substrate;
After the film forming step, the wall surface of the film forming chamber is heated by a heating means for cleaning, and a third reactive gas is supplied into the film forming chamber to clean the wall surface;
The film-forming method which has can also be provided.

  According to the present invention, in order to remove the foreign matter accumulated on the film formation chamber wall surface, the heating means for cleaning for heating the film formation chamber wall surface is provided. By heating the wall surface by the heating means for cleaning, the reaction between the foreign matter adhering to the wall surface and the reactive gas can be promoted. By doing so, the foreign matter on the wall surface can be efficiently cleaned in a short time with high cleanliness. That is, according to the present invention, epitaxial growth can always be performed in a clean state in which no foreign matter adheres to the wall surface of the film forming chamber, which may cause growth inhibition due to the foreign matter or cause unevenness in the film forming chamber. Epitaxial growth that can eliminate and form a good film quality can be realized stably.

  According to the present invention, there is provided a technique for cleaning a film forming chamber efficiently in a short time and with a high cleanliness.

It is sectional drawing of the vapor phase growth apparatus concerning one Embodiment of this invention. It is the schematic of the vapor phase growth apparatus concerning one Embodiment of this invention. It is a top view of a vapor phase growth apparatus. It is sectional drawing which shows the principal part of a vapor phase growth apparatus. It is a top view which shows the principal part of a vapor phase growth apparatus. It is a figure which shows the conventional vapor phase growth apparatus.

  Hereinafter, embodiments of the present invention will be described using a vapor phase growth apparatus for forming a gallium nitride semiconductor layer such as GaN as an example.

  As shown in FIG. 1, the vapor phase growth apparatus 1 according to this embodiment includes a substrate S disposed therein, a film formation chamber 4 for forming a film on the substrate S, and the film formation chamber 4. A gas containing a halogen element and a first supply pipe 21 for supplying a first reactive gas for reacting with the gas to form a film on the substrate S, and an organic metal in the film forming chamber 4 The substrate S is held in the second supply pipe 31 for supplying a second reactive gas for forming a film on the substrate S by reacting with the gas and the gas containing the organic metal, and the film forming chamber 4. A substrate holding unit 5 provided with a substrate holding base (susceptor) 51, a film forming heating means 53 for heating the substrate S provided on the substrate holding base 51, and film formation other than the substrate holding base 51. A cleaning heating means 60 provided on the wall surface of the chamber 4 for heating the wall surface.

(Basic configuration of vapor phase growth equipment)
An outline of the basic configuration of the vapor phase growth apparatus according to the present embodiment will be described.
FIG. 1 is a cross-sectional view of the vapor phase growth apparatus according to the present embodiment, and is a displacement cross-sectional view in which the cross sections in the AA direction and the BB direction in FIG. 3 are combined.
FIG. 5 is a plan view for explaining film formation on the substrate holding unit 51 and the substrate S of the vapor phase growth apparatus according to the present embodiment.

  The vapor phase growth apparatus according to this embodiment includes a hydride vapor phase growth gas supply unit 2 that forms a film by an HVPE method and a metal organic vapor phase growth gas supply unit 3 that forms a film by an MOCVD method. ing. In this way, a film can be formed on the substrate S with high manufacturing efficiency by combining the HVPE method and the MOCVD method.

The hydride vapor phase growth gas supply unit 2 according to the present embodiment is for carrying out hydride vapor phase growth in the film forming chamber 4.
The hydride vapor phase growth gas supply unit 2 includes a first supply pipe 21 and a second heat shield means 22 disposed outside the first supply pipe 21. The first supply pipe 21 includes three pipes (an outer pipe 211, a first inner pipe (not shown), and a second inner pipe (not shown)).

  The outer tube 211 is a tube for supplying the first reactive gas to the film forming chamber 4. This first reactive gas is a gas containing a group V element. Further, as described above, the first reactive gas is a gas for forming a film on the substrate S by reacting with the gas containing the halogen element and the group III element. In the present embodiment, the outer tube 211 supplies ammonia gas, which is the first reactive gas, to the film forming chamber 4.

  The first inner tube has an inner diameter smaller than that of the outer tube 211 and is inserted into the outer tube 211. A non-reactive gas that does not react with the first reactive gas and the gas containing a halogen element is supplied into the first inner tube. This non-reactive gas is a gas that does not react with both the first reactive gas and a gas containing a halogen element and a group III element. An example of the non-reactive gas is hydrogen gas.

  The second inner tube has a smaller inner diameter than the first inner tube and is inserted into the first inner tube. A gas containing a halogen element and a group III element is supplied from the second inner tube into the film forming chamber 4. The gas containing the halogen element and the group III element is a gas for reacting with the first reactive gas discharged from the outer tube 211 to form a film on the substrate S.

The gas containing a halogen element is preferably a halogenated gas of a group III element, for example, GaCl gas.
Inside the second inner tube, a source (source boat) 24 containing a source of a gas containing the halogen element, for example, a source containing a group III element (eg, Ga) is disposed.

  A pipe 25 and a pipe 26 are connected to the container 24. A raw material gas (for example, HCl gas) for generating a gas containing a halogen element is supplied into the container 24 through a pipe 26, and a gas containing a halogen element (for example, GaCl gas) reacts with the raw material in the container 24. Generated. The generated gas containing a halogen element is discharged from the pipe 27 and supplied into the film formation chamber 4. Note that a gas containing a halogen element may be supplied from the outer tube 211 and the first reactive gas may be supplied from the second inner tube.

A heating means for heating the inside of the first supply pipe 21, for example, a third heating means 80, is disposed around the first supply pipe 21, particularly, at a position around the container 24.
Further, the second heat shield means 22 is disposed around (outer circumference) the third heating means 80.

  In the present embodiment, the second heat shield means 22 is arranged around the first supply pipe 21, particularly a plurality of tubular metal members 223 provided so as to surround the container 24, and the metal members 223. The cooling means 224 is configured. The metal member 223 is, for example, a triple structure cylinder. Around the metal member 223, a pipe constituting the cooling means 224 is disposed, and a cooling fluid W (for example, a liquid such as water) passes through the inside of the pipe, and heat generated by the third heating means 90 is generated. Insulates heat (FIG. 4).

  The metal-organic vapor phase growth gas supply unit 3 according to this embodiment is for performing metal organic vapor phase growth in the film forming chamber 4. The metal-organic vapor phase growth gas supply unit 3 supplies a second source gas composed of a gas containing an organic metal and a second reactive gas that reacts with the gas to the substrate S in the film forming chamber 4. A second supply pipe 31 is provided.

  A pipe 34 and a pipe 33 are connected to the second supply pipe 31. The pipe 34 supplies a gas containing an organic metal, and the pipe 33 supplies a second reactive gas. A shower head 32 as a gas supply section having a plurality of holes is attached to the supply port of the second supply pipe 31, and a gas containing an organic metal and the gas are provided through the holes of the shower head 32. And a second reactive gas that reacts with the film formation chamber 4.

  Examples of the gas containing an organic metal include an organic metal gas containing a group III element, for example, an organic metal gas such as trimethylgallium and trimethylaluminum. As the second reactive gas, for example, a group V element is used. Examples of the gas include ammonia, phosphine, and arsine. The gas containing the organic metal and the second reactive gas are supplied to the film forming chamber 4 through different holes of the shower head 32.

  As shown in FIG. 3, the metal-organic vapor phase growth gas supply unit 3 according to the present embodiment includes a plurality of, for example, two second supply pipes 31 and is opposed to each other in a plan view from the upper surface of the apparatus 1. .

  Further, the hydride vapor phase growth gas supply unit 2 described above also includes a plurality of, for example, two first supply pipes 21 and is disposed so as to face each other in a plan view from the upper surface of the apparatus as shown in FIG. In other words, the first supply pipe 21 and the second supply pipe 31 are alternately arranged on one circumference.

  The plurality of first supply pipes 21 and the plurality of second supply pipes 31 described above are all arranged in parallel, and gas is supplied from the supply pipes 21 and 31 into the film forming chamber 4 from the same direction. .

  The film forming chamber 4 according to the present embodiment is constituted by a chamber made of stainless steel, for example. A substrate holder 5 for holding the substrate S is disposed in the film forming chamber 4. The substrate holding unit 5 includes a substrate holding table 51 that holds the substrate S and a moving unit. In the vapor phase growth apparatus 1 according to the present embodiment, the rotational movement type rotating means 52 that rotationally drives the substrate holding base 51 is used as the moving means (FIG. 1), but is not limited thereto. As the moving means, for example, in addition to the rotational movement type in which the substrate holding base 51 is rotationally driven as shown in FIG. 3, the sliding movement type in which the substrate holding base 51 is linearly moved in the horizontal direction without rotating is also possible. Good.

  The substrate holding table 51 is a disc-shaped one, and holds the substrate S on one surface (front surface). The surface of the substrate holding table 51 that holds the substrate is a surface that is orthogonal to the substrate holding table 51 of the substrate holding table 51 and is the surface opposite to the surface to which the rotating means 52 is connected. The substrate S is held so that the substrate surface faces the supply pipes 21 and 31 side. In other words, the substrate S is arranged so that the substrate surface of the substrate S and the gas supply direction from the supply pipes 21 and 31 are orthogonal to each other.

  In the present embodiment, the substrate holding table 51 holds a plurality of substrates S, and the substrates S are arranged on the same circle with the substrate holding table 51 as the center.

The rotating means 52 is connected to the substrate holder 51.
In plan view from the direction along the substrate holder 51, the gas supply port to the film formation chamber 4 of the first supply pipe 21 and the gas supply port to the film formation chamber 4 of the second supply pipe 31 are the substrate The holding base 51 is rotationally driven to be positioned on the circumference drawn by the substrate S (see FIG. 5). 5 is a plan view of the vapor phase growth apparatus 1, and is a view of the substrate holder 51 as viewed from the first supply pipe 21 and the second supply pipe 31 side.

  Here, the substrate holder 51 is rotated by the rotating means 52. Then, the substrate S held on the substrate holding table 51 moves on one circumference around the substrate holding table 51 and revolves around the substrate holding table 51. The substrate S revolving around the substrate holder 51 is sequentially opposed to the supply port of the first supply pipe 21 and the supply port of the second supply pipe 31, and the substrate S is opposed to the supply port of the first supply pipe 21. The state and the state in which the substrate S faces the supply port of the second supply pipe 31 are switched.

  As shown in FIG. 5, when the substrate S held on the substrate holding table 51 and the supply port of the first supply tube 21 are arranged to face each other, the diameter of the supply port of the first supply tube 21 is the substrate. Slightly larger than the diameter of S, one substrate S is accommodated in the supply port in a plan view from the upper surface side of the apparatus (a plan view from the first supply pipe 21 side). However, in plan view from the upper surface side, one substrate S is accommodated in the supply port, but a plurality of substrates S is not accommodated in the supply port.

  Similarly, when the substrate S held on the substrate holder 51 and the supply port of the second supply pipe 31 are arranged to face each other, the diameter of the supply port of the second supply pipe 31 is slightly smaller than the diameter of the substrate S. The substrate S is accommodated in the supply port in a plan view from the upper surface side. However, in plan view from the upper surface side, one substrate S is accommodated in the supply port, but a plurality of substrates S is not accommodated in the supply port.

  Further, in the film forming chamber 4, in order to make the atmosphere in the film forming chamber 4 the same gas as the first reactive gas supplied from the first supply pipe 21, A pipe (not shown) for supplying the reactive gas is also connected. Further, a pipe 6 for exhausting the gas in the film forming chamber 4 is also connected to the film forming chamber 4.

  The above is the basic configuration of the vapor phase growth apparatus 1 according to the present embodiment. In the vapor phase growth apparatus 1 of the present embodiment, in addition to the configuration described above, the heating means for cleaning 60, the gas introduction unit 6, the gas discharge unit 7, the control unit 8, the first heat shield unit 70, and the non-heating unit 70 are not included. Active gas supply means 90 is provided. In addition, the vapor phase growth apparatus 1 according to the present embodiment is characterized in that the wall surface of the film formation chamber 4 can be cleaned after the film formation on the substrate S. In the section of cleaning of the film forming chamber described later, this point is described with respect to the heating means 60 for cleaning provided in the vapor phase growth apparatus 1, the gas introduction unit 6, the gas discharge unit 7, the control unit 8, and the first heat shield. A description will be given together with the means 70 and the inert gas supply means 90.

(Film formation method)
Next, an outline of a method for forming a semiconductor layer using the vapor phase growth apparatus 1 described above will be described with an example.

  First, the substrate S formed with a film thickness of about 2 μm on the sapphire substrate is placed on the substrate holder 51. After the substrate S is installed, hydrogen gas is supplied from the pipes 25, 26, 29, 33, and 34, and nitrogen gas is supplied from the pipes 28 and 211, so that the gas containing the halogen element is contained in the container via the pipe 26. In addition to being discharged from 24, the film is supplied into the film forming chamber 4 from the supply port of the second inner pipe 213. Next, the substrate holding table 51 is heated using the film forming heating means 53 to heat the substrate S. At this time, the temperature of the substrate S is set to 1050 ° C. Further, while heating the substrate S using the film-forming heating means 53, ammonia gas is supplied from the pipe 29 or 34, or both 29 and 34.

  Further, after the temperature of the substrate S is stabilized, hydrogen chloride is supplied to the film forming chamber 4 from the pipe 26 unlike when the substrate is heated. Thus, hydrogen chloride (HCl) supplied to the film formation chamber 4 reacts with gallium in the container 24 to generate gallium chloride (GaCl). The generated GaCl is ejected from the pipe 27 into the film forming chamber 4. The ejected GaCl reacts with ammonia gas in the film forming chamber 4 to generate gallium nitride (GaN). The generated GaN is formed on the substrate holding table 51 on the substrate S, thereby forming a film. Further, at the same time as the GaN film is formed on the substrate S, the GaN adheres to the wall surface of the film forming chamber 4 as a foreign substance.

  Note that, when the substrate S is heated by the film-forming heating means 53, the temperature of the substrate S is preferably 800 ° C. or higher, and more preferably 950 ° C. or higher and 1100 ° C. or lower. By doing so, a film can be formed on the substrate S with high manufacturing efficiency.

Further, at the time of film formation in the present embodiment, it is preferable to heat the raw material in the container 24 until the temperature reaches a predetermined temperature, for example, 700 ° C. or higher, and more preferably 800 ° C. or higher. Thereafter, a carrier gas and a raw material gas (for example, HCl gas) for generating the first reactive gas are supplied into the container 24 through the pipe 26, and the raw material gas and the raw material in the container 24 are reacted. A gas containing a halogen element, for example, gallium chloride (GaCl) gas is generated.
The gas containing the halogen element is discharged from the container 24 through the pipe 27 and supplied into the film forming chamber 4.

  Further, an inert gas is supplied from the outer tube 211, flows through the region of the film-forming heating means 53, flows downstream of the substrate holder 51 in the film-forming chamber 4, and is discharged from the gas discharge unit 7.

  When the gas containing the halogen element and the first reactive gas are supplied from the first supply pipe 21 into the film forming chamber 4, the substrate holder 51 in the film forming chamber 4 is moved by the rotating means 52. Rotating drive. Therefore, the substrate S on the substrate holder 51 is revolved around the substrate holder 51 during film formation by the hydride vapor phase growth method. The plurality of substrates S on the substrate holding table 51 sequentially face the supply ports of the first supply pipe 21 as the substrate holding table 51 rotates.

  The number of rotations of the substrate holder 51 during film formation is preferably 100 rpm or more. By setting the number of rotations of the substrate holder 51 to 100 rpm or more, particularly 300 rpm or more, it is possible to suppress a gas flow that rises from the substrate S toward the supply port side of the first supply pipe 21.

  The first reactive gas supplied from the supply port of the first supply pipe 21 reacts with the gas containing the halogen element on the substrate S that is in a state of facing the supply port, and on the substrate surface of the substrate S. A film will be formed.

  After the film is formed on the substrate S as described above, the hydride vapor phase growth gas supply unit 2 is stopped, and then the metalorganic vapor phase growth gas supply unit 3 is driven. At this time, the metal-organic vapor phase growth gas supply unit 3 can be driven without cooling the first supply pipe 21 of the hydride vapor phase growth gas supply unit 2.

  A gas containing an organic metal and a second reactive gas that reacts with the gas are supplied into the film forming chamber 4 through the shower head 32 at the supply port of the second supply pipe 31. At this time, the inside of the film forming chamber 4 is set to a second reactive gas atmosphere (for example, an ammonia gas atmosphere) that reacts with a gas containing an organic metal. The film forming chamber 4 may be a gas atmosphere containing a group V (for example, a nitrogen gas atmosphere).

  Further, during film formation by metal organic vapor phase epitaxy, the substrate holder 51 in the film formation chamber 4 is rotationally driven by the rotation means 52. During film formation, the substrate S on the substrate holder 51 is in a rotationally driven state. Accordingly, the plurality of substrates S on the substrate holding table 51 sequentially face the supply ports of the second supply pipe 31.

  The number of rotations of the substrate holder 51 during film formation is preferably 100 rpm or more. By setting the number of rotations of the substrate holder 51 to 100 rpm or more, particularly 300 rpm or more, it is possible to suppress a gas flow that rises from the substrate S toward the supply port.

  The gas containing the organic metal supplied from the supply port of the second supply pipe 31 reacts with the second reactive gas on the substrate S in a state facing the supply port, and a film is formed on the substrate S. Will be. In the obtained film, the wall surface of the film forming chamber 4 is heated by the heating means for cleaning 60, so that it is possible to suppress adhesion of foreign matter to the wall surface and contamination of the foreign matter attached to the wall surface into the growth layer. Can do.

  Thus, using the vapor phase growth apparatus 1, for example, a semiconductor device such as a semiconductor light emitting element such as a laser or a light emitting diode can be formed on the substrate S.

  The above is the outline of the method for forming a semiconductor layer using the vapor phase growth apparatus 1 according to the present embodiment. Next, the film forming method according to the present embodiment is characterized in that after the film is formed on the substrate S, the wall surface of the film forming chamber 4 can be cleaned. Hereinafter, regarding this point, the heating means 60 for cleaning, the gas discharge parts 6 and 7, the control part 8, the first heat shield means 70, and the inert gas supply provided in the vapor phase growth apparatus 1 described above will be described. The details will be described together with the means 90.

(Cleaning the deposition chamber)
In the film forming method according to the present embodiment, for example, the following method is used to clean the wall surface of the film forming chamber 4.
First, after the GaN film is formed, the substrate S is taken out from the apparatus, and the wall surface of the film forming chamber 4 is heated by the cleaning heating means 60, and the third reactivity is introduced into the film forming chamber 4 from the gas introduction unit 25. Supply gas. At this time, the temperature of the wall surface is preferably 900 ° C. or higher, more preferably 1000 ° C. or higher. Further, the upper limit of the wall surface temperature is preferably 1200 ° C. or lower, more preferably 1100 ° C. or lower. By doing so, it is possible to clean the film forming chamber 4 more efficiently in a shorter time and with high cleanliness. The substrate holder 51 may be heated to the same temperature as the wall surface of the film formation chamber 4 by the film formation heating means 53. Note that the temperature of the substrate holder 51 is, for example, 1050 ° C.

  Next, after heating the wall surface and the substrate holder 51, hydrogen chloride is supplied as a third reactive gas into the film forming chamber 4 from the pipes 25 and 33. By doing so, it is possible to promote the reaction between the foreign substance adhering to the wall surface of the substrate holder 51 and the film forming chamber and the third reactive gas, which is about 1/5 of the case where the wall surface is not heated. Can be removed in time. That is, the film forming chamber can be cleaned efficiently in a short time and with high cleanliness.

  As described above, the vapor phase growth apparatus 1 according to the present embodiment is provided with the cleaning heating means 60 in order to efficiently remove the foreign matter adhering to the wall surface of the film forming chamber 4 in a short time. . By doing so, the reaction between the foreign matter adhering to the wall surface and the third reactive gas can be promoted, so that the film forming chamber 4 can be efficiently cleaned in a short time with high cleanliness. Thus, by providing the heating means 60 for cleaning in the vapor phase growth apparatus 1, the film forming chamber 4 after film formation can be cleaned. The cleaning of the film formation chamber 4 is not particularly limited, but may be performed after a plurality of film formations or each time a film is formed.

  In addition, the foreign matter adhering to the wall surface of the film forming chamber 4 is solidified by a product generated by a reaction between gases supplied from a group III element GaN gas source and a group V element nitrogen gas source. It is thought that

The cleaning heating means 60 is preferably configured to heat the entire surface other than the substrate holder 51 in the film forming chamber 4. In this way, the wall surface of the film forming chamber can be efficiently heated to a temperature equal to or higher than the same temperature as that of the substrate holder 51. When the third reactive gas is introduced, the foreign matter adhering to the wall surface and the third The reaction with the reactive gas can be promoted, and the adhered foreign matter can be removed. For this reason, it is possible to shorten the time required for cleaning the foreign matter adhering to the wall surface, and it is possible to efficiently clean the film formation chamber with high cleanliness. Furthermore, by controlling the gas exhausted from the gas exhaust port 6 or 7, the gas flow in the film forming chamber can be changed. By doing so, it is possible to further promote the cleaning of the foreign matter adhering to the wall surface.
Control of the gas exhausted from the gas exhaust port 6 or 7 may be performed at the time of film formation by the MOCVD method or at the time of film formation by the HVPE method other than at the time of cleaning the wall surface of the film formation chamber 4. By doing so, the efficiency of the film thickness for epitaxial growth can be improved.

  Note that, as the third reactive gas according to the present embodiment, for example, a gas containing a halogen element such as hydrogen chloride and chlorine gas is preferably used.

  As shown in FIG. 2, the vapor phase growth apparatus according to the present embodiment includes a gas introduction unit that supplies a third reactive gas into the film forming chamber 4 that is used when cleaning the foreign matter attached to the wall surface. 25 and 33, the heating means 60 for cleaning, the operation of the gas introduction units 25 and 33, and the control unit 8 for controlling the exhaust gas from the exhaust ports 6 and 7 may be further included. According to the control unit 8, the third reactive gas can be supplied from the gas introduction unit 6 into the film forming chamber 4 in conjunction with the heating of the wall surface by the cleaning heating means 60. By doing so, the reaction efficiency between the foreign matter and the third reactive gas can be improved, and the foreign matter adhering to the wall surface can be cleaned more efficiently in a shorter time and with high cleanliness. be able to.

  In addition, the vapor phase growth apparatus 1 according to the present embodiment is provided with gas discharge units 6 and 7 for discharging the generated gas obtained by the reaction between the foreign substance and the third reactive gas from the film forming chamber 4. Yes. By doing so, the product gas obtained by the reaction between the foreign substance and the third reactive gas is efficiently discharged out of the apparatus without staying in the film forming chamber 4. For this reason, the film forming chamber can be cleaned with a high degree of cleanliness in a shorter time, with the foreign matter adhering to the wall surface being more efficient.

  Further, in the vapor phase growth apparatus according to the present embodiment, in order to prevent the wall surface temperature of the film forming chamber 4 heated by the cleaning heating unit 60 from being lowered, the vapor phase growth is performed on the cleaning heating unit 60. It is preferable that the first heat shield means 70 is provided on the outer wall side of the device 1. By providing the first heat shielding means 70 together with the cleaning heating means 60, it is possible to prevent diffusion of heat released from the cleaning heating means 60 outside the vapor phase growth apparatus 1. That is, the wall surface temperature in the film formation chamber 4 can be efficiently heated and further maintained, so that the foreign substance removal efficiency can be further improved when cleaning the wall surface of the film formation chamber.

  Furthermore, it is preferable that an inert gas supply means 90 is provided in the vicinity of the side walls of the first supply pipe 21 and the second supply pipe 31 in the film forming chamber 4 of the vapor phase growth apparatus 1 according to the present embodiment. The inert gas supply means 90 supplies the inert gas along the outer wall surfaces of the first supply pipe 21 and the second supply pipe 31 to which the first and second reactive gases are supplied. To do. This inert gas is supplied into the film forming chamber 4 in order to prevent the first and second reactive gases from leaking out of the film forming chamber 4. The inert gas supply means 90 is preferably provided at a location where foreign matter is most likely to adhere in the film forming chamber 4. In other words, it is preferably provided at a location adjacent to the side walls of the first supply pipe 21 and the second supply pipe 31 on the surface facing the substrate holder 51. In this way, the gas leaking from the film forming chamber 4 into the heating means 60 for cleaning, the first heat shielding means 70, and the vapor phase growth apparatus 1 is suppressed, and the adhesion of foreign matter to the wall surface itself is suppressed. can do. As described above, since the amount of foreign matter adhering to the wall surface during film formation can be reduced, the film formation chamber can be cleaned more efficiently in a shorter time and with high cleanliness.

  Next, the effect of this embodiment is demonstrated.

  A cleaning heating means 60 for cleaning foreign matter adhering to the wall surface is provided on the wall surface in the film forming chamber 4 of the vapor phase growth apparatus 1. The cleaning heating means 60 is provided on a surface other than the substrate holder 51 in the film forming chamber 4. According to the cleaning heating means 60, the wall surface in the film forming chamber 4 can be heated. For this reason, the foreign material adhering to the wall surface in the film-forming chamber 4 can be efficiently cleaned in a short time and with high cleanliness.

  Further, when the first heat shield means 53 is provided on the outer wall side of the vapor phase growth apparatus 1 with respect to the cleaning heating means 60, the wall surface temperature in the film forming chamber 4 is efficiently set to the target temperature. It is possible to heat and keep warm. By doing so, the foreign matter adhering to the wall surface in the film forming chamber 4 can be removed more efficiently.

  Further, an inert gas is supplied in the vicinity of the side walls of the first supply pipe 21 and the second supply pipe 31 in the film forming chamber 4 in order to prevent a gas considered to be a cause of generating foreign matter from leaking outside the film forming chamber 4. Inert gas supply means 90 may be provided. From the inert gas supply means 90, the inert gas is continuously supplied into the film forming chamber 4. By doing so, leakage of the first and second reactive gases to the outside of the film forming chamber 4 can be prevented. That is, it is possible to suppress the adhesion of foreign matter to the wall surface in the film forming chamber 4.

  Moreover, in the said embodiment, although the III-V group semiconductor film was formed with the vapor phase growth apparatus 1, this invention can also be applied to film-forming of not only this but II-VI group semiconductor etc.

DESCRIPTION OF SYMBOLS 1 Vapor growth apparatus 2 Gas supply part for hydride vapor phase growth 3 Gas supply part for organometallic vapor phase growth 4 Film-forming chamber 5 Substrate holding part 6, 7 Gas discharge part 8 Control part 21 First supply pipe 22 Second Heat shield means 24 Container 25 Pipe 26 Pipe 27 Pipe 28 Pipe 31 Second supply pipe 32 Shower head 33 Pipe 34 Pipe 51 Substrate holder 52 Rotating means 53 Filming heating means 60 Cleaning heating means 70 First heat shielding means 80 Third heating means 90 Inert gas supply means 211 Outer tube 223 Metal member 224 Cooling means 900 Device 901 HVPE chamber 902 MOCVD chamber S Substrate W Fluid L Rotating shaft

Claims (20)

A substrate is disposed inside, and a film formation chamber for forming a film on the substrate;
A first supply pipe for supplying a gas containing a halogen element in the film formation chamber and a first reactive gas for reacting with the gas to form a film on the substrate;
A second supply pipe for supplying a gas containing an organic metal in the film formation chamber and a second reactive gas for reacting with the gas containing the organic metal to form a film on the substrate;
A substrate holder provided with a substrate holder for holding the substrate in the film forming chamber;
A film-forming heating means provided on the substrate holding table for heating the substrate;
A heating means for cleaning provided on the wall surface of the film forming chamber other than the substrate holder, and heating the wall surface;
A vapor phase growth apparatus comprising: The first supply pipe is
A first gas supply port for supplying gas to the film formation chamber;
The second supply pipe is
A second gas supply port for supplying gas to the film formation chamber;
The substrate with respect to the first gas supply port or the second gas supply port so that the first gas supply port and the second gas supply port are located at a position facing the substrate. Moving means for moving
Further comprising
2. The vapor phase growth apparatus according to claim 1, wherein the moving unit switches between a state in which the first gas supply port and the substrate face each other and a state in which the second gas supply port and the substrate face each other. The substrate holder is
The moving means for rotationally driving the substrate holding table further comprises a rotating means,
By driving the substrate holding table by the rotating means, the substrate held by the substrate holding table moves on a circumference around the rotation axis of the substrate holding table,
By moving the substrate on the circumference, the first gas supply port of the first supply pipe and the substrate face each other, the second gas supply port of the second supply pipe, and the The vapor phase growth apparatus according to claim 2, wherein a state in which the substrate faces is switched.   4. The vapor phase growth apparatus according to claim 1, wherein the cleaning heating unit is configured to heat the entire surface of the film forming chamber other than the substrate holding table. 5. A gas introduction part for supplying a third reactive gas used for cleaning the wall surface;
A control unit for controlling operations of the heating means for cleaning and the gas introduction unit;
The vapor phase growth apparatus according to any one of claims 1 to 3, further comprising:   4. The vapor phase growth apparatus according to claim 1, further comprising a gas discharge unit configured to discharge gas from the film formation chamber.   The vapor phase growth apparatus according to any one of claims 1 to 3, wherein a first heat shield means is provided on the outer wall side of the vapor phase growth apparatus with respect to the cleaning heating means.   2. An inert gas supply means for supplying an inert gas is further provided in the vicinity of the side wall of the first supply pipe and the second supply pipe on a surface facing the substrate holder in the film forming chamber. The vapor phase growth apparatus as described in any one of thru | or 3.   9. The vapor phase growth apparatus according to claim 8, wherein the inert gas supply means is provided at a location adjacent to the first supply pipe and the second supply pipe on a surface facing the substrate holding table. The substrate holding table further includes a rotating means as the moving means for rotationally driving the substrate holding table,
Holding the substrate on a surface orthogonal to the rotation axis of the substrate holding table;
Gas supply port to the film formation chamber of the first supply pipe and gas supply to the film formation chamber of the second supply pipe in a plan view from the direction along the rotation axis of the substrate holder The vapor deposition apparatus according to claim 9, wherein the mouth is positioned on a circumference drawn by the substrate by rotationally driving the substrate holding table. When supplying the gas containing a halogen element and the first reactive gas that reacts with the gas from the first supply pipe, or
When supplying the second reactive gas for forming a film on the substrate by reacting with the gas containing an organic metal and the gas containing the organic metal from the second supply pipe,
The vapor phase growth apparatus according to claim 10, wherein the rotating unit rotates the substrate holding table and performs film formation on the substrate while revolving the substrate around a rotation axis of the substrate holding table. The substrate holding table holds a plurality of the substrates on the same circumference around the rotation axis,
When supplying the first reactive gas for forming a film on the substrate by reacting with the gas containing the halogen element and the gas from the first supply pipe, or
When supplying the second reactive gas for forming a film on the substrate by reacting with the gas containing an organic metal and the gas containing the organic metal from the second supply pipe,
While rotating the substrate holding table by the rotating means, the plurality of substrates on the substrate holding table are sequentially supplied to the film supply chamber of the first supply tube or the second supply tube. The vapor phase growth apparatus according to claim 10 or 11, wherein a film is formed facing a gas supply port to the film formation chamber. The first supply pipe is
An outer tube for supplying any one of the gas containing a halogen element and the first reactive gas for reacting with the gas to form a film on the substrate;
A non-reactive gas that is inserted into the outer tube and does not react with any of the gas containing a halogen element and the first reactive gas for reacting with the gas to form a film on the substrate; A first inner pipe to supply;
Either one of the gas containing the halogen element and the first reactive gas inserted into the first inner tube and reacting with the gas to form a film on the substrate. The vapor phase growth apparatus according to any one of claims 1 to 12, further comprising a second inner pipe to be supplied.   When the gas containing the halogen element and the first reactive gas for forming a film on the substrate by reacting with the gas containing the halogen element are supplied from the first supply pipe, The vapor phase growth apparatus according to any one of claims 1 to 13, wherein the first reactive gas atmosphere reacts with the gas containing an element. Around the first supply pipe, a third heating means for heating the inside of the first supply pipe is arranged,
The vapor phase growth according to any one of claims 1 to 14, wherein a second heat shielding unit that blocks heat from the third heating unit is disposed around the third heating unit. apparatus.   16. The vapor phase growth apparatus according to claim 15, wherein the second heat shield means includes a cooling device. From the first supply pipe, a gas containing a group III element and the halogen element and the first reactive gas containing a group V element are supplied,
The gas according to any one of claims 1 to 16, wherein the gas containing an organic metal containing a group III element and the second reactive gas containing a group V element are supplied from the second supply pipe. Phase growth equipment. A film forming method for forming a film on a substrate using a vapor phase growth apparatus,
The vapor phase growth apparatus is the vapor phase growth apparatus according to any one of claims 1 to 17,
Supplying a reactive gas to the film forming chamber to form a film on the substrate;
After the step of forming a film, heating the wall surface of the film forming chamber by a heating means for cleaning, supplying a third reactive gas into the film forming chamber, and cleaning the wall surface;
A film forming method comprising: In the film forming step, the gas containing the halogen element and the first reactive gas are supplied from the first supply pipe onto the substrate in the film forming chamber to form a film. A membrane process;
A second film forming step of forming a film by supplying the gas containing an organic metal and the second reactive gas from the second supply pipe onto the substrate in the film forming chamber;
The film-forming method of Claim 18 provided with.   The film forming method according to claim 19, wherein the first film forming step and the second film forming step include a step of heating the wall surface in the film forming chamber other than the substrate holder.

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